Substrate standby unit and substrate processing system

Abstract

The utility model provides a substrate standby part and a substrate processing system, which can improve production capacity. A substrate standby unit waits for a substrate on which a first liquid film is adhered on the upper surface and the lower surface, the substrate standby unit comprising: a processing liquid supply unit that forms a second liquid film by supplying a first amount of processing liquid to the upper surface of the substrate; a mass measurement unit that measures the mass of the second liquid film; a first imaging unit that acquires an upper surface image, which is an image of the upper surface of the substrate; and a liquid film state determination unit that determines the state of the second liquid film using the upper surface image.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a substrate standby section and a substrate processing system. BACKGROUND

[0002] A substrate processing system provided with a batch processing section, a single piece processing section, and an interface section is known (for example, refer to Patent Literature 1). The interface section hands over a substrate from the batch processing section to the single piece processing section. The interface section has a pure water supply section that forms a liquid film of pure water on an upper surface of the substrate, and a load sensor that measures a mass of the liquid film formed on the upper surface of the substrate.

[0003] PRIOR ART DOCUMENTS

[0004] PATENT LITERATURE

[0005] Patent Literature 1: Japanese Patent Application Laid-Open No. 2023-129235 SUMMARY

[0006] PROBLEMS TO BE SOLVED BY THE INVENTION

[0007] The present disclosure provides a technology capable of detecting a defect of a coating process with high precision.

[0008] MEANS FOR SOLVING THE PROBLEMS

[0009] A substrate standby section of one embodiment of the present disclosure waits for a substrate having a first liquid film attached to an upper surface and a lower surface, the substrate standby section including: a processing liquid supply section that supplies a first amount of a processing liquid to the upper surface of the substrate to form a second liquid film; a mass measurement section that measures a mass of the second liquid film; a first imaging section that acquires an image of the upper surface of the substrate, that is, an upper surface image; and a liquid film state determination section that determines a state of the second liquid film using the upper surface image.

[0010] A substrate standby section of another embodiment of the present disclosure further includes a suction mechanism that suctions the lower surface of the substrate to remove the first liquid film attached to the lower surface of the substrate.

[0011] A substrate standby section of another embodiment of the present disclosure further includes a placement table that horizontally holds the substrate, the placement table including a plurality of suction holes connected to the suction mechanism.

[0012] A substrate standby section of another embodiment of the present disclosure further includes a plurality of pins that support the substrate, and a drive source that relatively raises and lowers the plurality of pins with respect to the placement table.

[0013] A substrate standby section of another embodiment of the present disclosure further includes a second imaging section that acquires an image of the lower surface of the substrate, that is, a lower surface image.

[0014] The substrate standby section of another aspect of the present disclosure further includes a lower surface state determination section that determines a state of a lower surface of the substrate using the lower surface image.

[0015] The substrate processing system of another aspect of the present disclosure includes the substrate standby section described above.

[0016] The substrate standby section of another aspect of the present disclosure waits for a substrate having a first liquid film attached to an upper surface and a lower surface, and includes a processing liquid supply section that supplies a processing liquid to the upper surface of the substrate, a mass measurement section that measures a mass of the substrate, a first imaging section that acquires an image of the upper surface of the substrate, and a control section that controls the processing liquid supply section to supply the processing liquid to the upper surface of the substrate in a first amount to form a second liquid film, calculates a mass of the second liquid film based on the mass of the substrate measured by the mass measurement section, causes the first imaging section to acquire the upper surface image, and determines a state of the second liquid film based on the upper surface image when the mass of the second liquid film is equal to or greater than a first threshold value.

[0017] Effects of the Invention

[0018] According to the present disclosure, a defect in a coating process can be detected with high precision. BRIEF DESCRIPTION OF DRAWINGS

[0019] Figure 1 FIG. 1 is a plan view showing a substrate processing system according to an embodiment.

[0020] Figure 2 FIG. 2 is a side view showing a second handover table.

[0021] Figure 3 FIG. 3 is a plan view showing an example of a placement table.

[0022] Figure 4 FIG. 4 is a plan view showing another example of a placement table.

[0023] Figure 5 FIG. 5 is a plan view showing a configuration of a pin.

[0024] Figure 6 FIG. 6 is a flowchart showing a substrate processing method according to an embodiment.

[0025] Figure 7 FIG. 7 is a flowchart showing a first example of an operation of a second handover table.

[0026] Figure 8 FIG. 8 is a diagram (1) showing the first example of the operation of the second handover table.

[0027] Figure 9 FIG. 2 is a diagram illustrating a first example of the operation of the second handover station.

[0028] Figure 10 FIG. 3 is a diagram illustrating a first example of the operation of the second handover station.

[0029] Figure 11 FIG. 4 is a diagram illustrating a first example of the operation of the second handover station.

[0030] Figure 12 FIG. 5 is a diagram illustrating a first example of the operation of the second handover station.

[0031] Figure 13 FIG. 6 is a diagram illustrating a first example of the operation of the second handover station.

[0032] Figure 14 FIG. 7 is a diagram illustrating a first example of the operation of the second handover station.

[0033] Figure 15 FIG. 8 is a flowchart illustrating a second example of the operation of the second handover station.

[0034] Figure 16 FIG. 9 is a diagram illustrating a second example of the operation of the second handover station.

[0035] Figure 17 FIG. 10 is a diagram illustrating a second example of the operation of the second handover station.

[0036] Figure 18 FIG. 11 is a diagram illustrating a second example of the operation of the second handover station.

[0037] Figure 19 FIG. 12 is a diagram illustrating a second example of the operation of the second handover station.

[0038] Figure 20 FIG. 13 is a diagram illustrating a second example of the operation of the second handover station.

[0039] Figure 21 FIG. 14 is a diagram illustrating a second example of the operation of the second handover station.

[0040] Figure 22 FIG. 15 is a diagram illustrating a second example of the operation of the second handover station.

[0041] Figure 23 FIG. 16 is a flowchart illustrating a third example of the operation of the second handover station.

[0042] Figure 24 FIG. 17 is a diagram illustrating a third example of the operation of the second handover station.

[0043] Figure 25FIG. 2 is a diagram showing a third example of the operation of the second transfer station.

[0044] Figure 26 FIG. 3 is a diagram showing a third example of the operation of the second transfer station.

[0045] Figure 27 FIG. 4 is a diagram showing a third example of the operation of the second transfer station.

[0046] Figure 28 FIG. 5 is a diagram showing a third example of the operation of the second transfer station.

[0047] Figure 29 FIG. 6 is a diagram showing a third example of the operation of the second transfer station. DETAILED DESCRIPTION

[0048] Hereinafter, non-limiting exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings. In all the accompanying drawings, the same or corresponding components or parts are denoted by the same or corresponding reference numerals, and repeated descriptions are omitted.

[0049] 〔Substrate processing system〕

[0050] Reference Figure 1 A substrate processing system 1 according to the embodiment will be described. Figure 1 It is a plan view showing the substrate processing system 1 according to the embodiment.

[0051] like Figure 1 As shown, the substrate processing system 1 includes a loading and unloading unit 2 , a first interface unit 3 , a batch processing unit 4 , a second interface unit 5 , a single wafer processing unit 6 , and a control device 9 .

[0052] The loading and unloading unit 2 serves as both a loading unit and an unloading unit. Therefore, the substrate processing system 1 can be miniaturized. The loading and unloading unit 2 includes a load port 21 , a stocker 22 , a loader 23 , and a cassette transport device 24 .

[0053] The loading port 21 is arranged on the negative side of the load-in / load-out section 2 in the X-axis direction. A plurality of (for example, four) loading ports 21 are arranged along the Y-axis direction. However, there is no particular limitation on the number of loading ports 21. A box C is placed on the loading port 21. The box C is used to accommodate a plurality of (for example, 25) substrates W, which are loaded in and out relative to the loading port 21. Inside the box C, the substrates W are held horizontally, and in the vertical direction, the substrates W are held at a second pitch P2 (P2 = N × P1) which is N times the first pitch P1. N is a natural number greater than or equal to 2, and is 2 in this embodiment, but may also be greater than or equal to 3.

[0054] The storages 22 are arranged in the Y-axis direction at the center of the X-axis direction of the load / unload part 2. The storages 22 are arranged in the Y-axis direction adjacent to the first interface part 3 at a position on the positive side of the X-axis direction of the load / unload part 2. The storages 22 can also be arranged in multiple layers in the vertical direction. The storages 22 are used to temporarily store a cassette C in which a substrate W before cleaning processing is accommodated, a cassette C whose inside becomes empty after a substrate W is taken out, and the like. The number of the storages 22 is not particularly limited.

[0055] The loader 23 is arranged adjacent to the first interface part 3 and at a position on the positive side of the X-axis direction of the load / unload part 2. The cassette C is placed on the loader 23. The loader 23 is provided with a lid opening / closing mechanism (not shown) for opening and closing the lid of the cassette C. The loader 23 can also be provided with a plurality of loaders. The loader 23 can also be arranged in multiple layers in the vertical direction.

[0056] The cassette conveyance device 24 conveys the cassette C between the load port 21, the storages 22, and the loader 23. The cassette conveyance device 24 is, for example, a multi-joint conveyance robot.

[0057] The first interface part 3 is arranged on the positive side of the X-axis direction of the load / unload part 2. The first interface part 3 conveys the substrate W between the load / unload part 2, the batch processing part 4, and the single piece processing part 6. The first interface part 3 has a substrate transfer device 31, a substrate group forming part 32, and a first handoff table 33.

[0058] The substrate transfer device 31 conveys the substrate W between the cassette C placed on the loader 23, the substrate group forming part 32, and the first handoff table 33. The substrate transfer device 31 is composed of a multi-axis (for example, six-axis) arm robot, and has a substrate holding arm 31a at the front end thereof. The substrate holding arm 31a has a plurality of holding claws (not shown) capable of holding a plurality of (for example, 25) substrates W. The substrate holding arm 31a is capable of taking an arbitrary position and posture in a three-dimensional space while holding the substrates W with the holding claws.

[0059] The substrate group forming part 32 is arranged at a position on the positive side of the X-axis direction of the first interface part 3. The substrate group forming part 32 holds a plurality of substrates W at a first pitch P1 to form a substrate group L.

[0060] The first handoff table 33 is arranged adjacent to the single piece processing part 6 and at a position on the positive side of the Y-axis direction of the first interface part 3. The first handoff table 33 receives the substrate W from the fourth conveyance device 61 and temporarily stores the substrate W before handing over the substrate W to the load / unload part 2.

[0061] The batch processing section 4 is arranged on the positive side of the X-axis direction of the first interface section 3. The in-out section 2, the first interface section 3, and the batch processing section 4 are arranged in this order from the negative side of the X-axis direction toward the positive side of the X-axis direction. The batch processing section 4 uniformly processes a substrate group L including a plurality of substrates W (for example, 50 or 100) at a first interval P1. One substrate group L is composed of, for example, substrates W of M cassettes C. M is a natural number of 2 or more. M can be the same natural number as N or a different natural number from N. The batch processing section 4 has a chemical solution tank 41, a rinse solution tank 42, a first conveyance device 43, a processing tool 44, and a drive device 45.

[0062] The chemical solution tank 41 and the rinse solution tank 42 are arranged in the X-axis direction. For example, the chemical solution tank 41 and the rinse solution tank 42 are arranged in this order from the positive side of the X-axis direction toward the negative side of the X-axis direction. The chemical solution tank 41 and the rinse solution tank 42 are collectively referred to as processing tanks. The number of the chemical solution tank 41 and the rinse solution tank 42 is not limited to Figure 1 , for example. The chemical solution tank 41 and the rinse solution tank 42 can be one group in Figure 1 , for example, but can be a plurality of groups.

[0063] The chemical solution tank 41 is used to store a chemical solution in which the substrate group L is immersed. The chemical solution is, for example, an aqueous phosphoric acid solution (H3PO4). The aqueous phosphoric acid solution selectively etches and removes silicon oxide film and silicon nitride film among silicon nitride film. The chemical solution is not limited to the aqueous phosphoric acid solution. For example, it can be DHF (dilute hydrofluoric acid), BHF (a mixture of hydrofluoric acid and ammonium fluoride), dilute sulfuric acid, SPM (a mixture of sulfuric acid, hydrogen peroxide, and water), SC1 (a mixture of ammonia, hydrogen peroxide, and water), SC2 (a mixture of hydrochloric acid, hydrogen peroxide, and water), TMAH (a mixture of tetramethylammonium hydroxide and water), plating solution, or the like. The chemical solution can be a chemical solution for stripping processing or plating processing. The number of the chemical solution is not particularly limited and can be a plurality.

[0064] The rinse solution tank 42 is used to store a first rinse solution in which the substrate group L is immersed. The first rinse solution is pure water for removing the chemical solution from the substrate W, and is, for example, DIW (deionized water).

[0065] The first conveyance device 43 has a guide rail 43a and a first conveyance arm 43b. The guide rail 43a is arranged at a position on the negative side of the Y-axis direction from the processing tanks. The guide rail 43a extends from the first interface section 3 toward the batch processing section 4 in the horizontal direction (X-axis direction). The first conveyance arm 43b moves along the guide rail 43a in the horizontal direction (X-axis direction). The first conveyance arm 43b can also move in the vertical direction and can also rotate around the vertical axis. The first conveyance arm 43b uniformly conveys the substrate group L between the first interface section 3 and the batch processing section 4.

[0066] The processing tool 44 receives the substrate group L from the first conveyance arm 43b and holds it. The processing tool 44 holds a plurality of substrates W at a first interval Pl in the Y-axis direction and holds them vertically respectively.

[0067] The driving device 45 moves the processing tool 44 in the X-axis direction and the Z-axis direction. The processing tool 44 immerses the substrate group L in the chemical liquid stored in the chemical liquid tank 41, then immerses the substrate group L in the first rinse liquid stored in the rinse liquid tank 42, and thereafter, transfers the substrate group L to the first conveyance device 43.

[0068] The number of units of the processing tool 44 and the driving device 45 is one in the present embodiment, but can be plural. In the latter case, one unit immerses the substrate group L in the chemical liquid stored in the chemical liquid tank 41, and another unit immerses the substrate group L in the first rinse liquid stored in the rinse liquid tank 42. In this case, the driving device 45 can move the processing tool 44 in the Z-axis direction, and can not move the processing tool 44 in the X-axis direction.

[0069] The second interface section 5 is disposed on the positive side of the Y-axis direction of the batch processing section 4. The second interface section 5 conveys the substrate W between the batch processing section 4 and the single piece processing section 6. The second interface section 5 has an immersion tank 51, a second conveyance device 52, a third conveyance device 53, and a second handover table 54.

[0070] The immersion tank 51 is disposed outside the moving range of the first conveyance arm 43b. For example, the immersion tank 51 is disposed at a position shifted to the positive side of the Y-axis direction with respect to the processing tank. The immersion tank 51 is used to store a second rinse liquid in which the substrate group L is immersed. The second rinse liquid is, for example, DIW (deionized water). The substrate W is held in the second rinse liquid until it is lifted by the third conveyance device 53. Since the substrate W is present below the liquid surface of the second rinse liquid, the surface tension of the second rinse liquid does not act on the substrate W, and it is possible to prevent the collapse of the concave-convex pattern of the substrate W.

[0071] The second conveyance device 52 has a Y-axis driving device 52a, a Z-axis driving device 52b, and a second conveyance arm 52c.

[0072] The Y-axis driving device 52a is disposed at a position on the positive side of the X-axis direction of the second interface section 5. The Y-axis driving device 52a extends from the second interface section 5 to the batch processing section 4 in the horizontal direction (Y-axis direction). The Y-axis driving device 52a moves the Z-axis driving device 52b and the second conveyance arm 52c in the Y-axis direction. The Y-axis driving device 52a can include a ball screw.

[0073] The Z-axis drive device 52b is movably installed to the Y-axis drive device 52a. The Z-axis drive device 52b moves the second carrying arm 52c in the Z-axis direction. The Z-axis drive device 52b can include a ball screw.

[0074] The second carrying arm 52c is movably installed to the Z-axis drive device 52b. The second carrying arm 52c receives the substrate group L from the first carrying arm 43b and holds it. The second carrying arm 52c holds a plurality of substrates W at the first interval Pl in the Y-axis direction and holds them respectively in the vertical direction. The second carrying arm 52c is moved in the Y-axis direction and the Z-axis direction by the Y-axis drive device 52a and the Z-axis drive device 52b. The second carrying arm 52c is configured to be movable between a plurality of positions including a handover position, an immersion position, and a standby position.

[0075] The handover position is a position at which the substrate group L is handed over between the first carrying arm 43b and the second carrying arm 52c. The handover position is a position on the negative side in the Y-axis direction and on the positive side in the Z-axis direction.

[0076] The immersion position is a position at which the substrate group L is immersed in the immersion tank 51. The immersion position is a position on the positive side in the Y-axis direction and on the negative side in the Z-axis direction than the handover position.

[0077] The standby position is a position at which the second carrying arm 52c waits when the substrate group L is not handed over and the substrate group L is not immersed in the immersion tank 51. The standby position is located directly below (on the negative side in the Z-axis direction) the handover position and is a position that does not interfere with the movement of the first carrying arm 43b. In this case, the second carrying arm 52c can be moved to the handover position only by moving upward (on the positive side in the Z-axis direction), and thus the production capacity is improved. The standby position can also be the same position as the immersion position. In this case, it is possible to prevent particles that can be generated as the first carrying device 43 operates from adhering to the second carrying arm 52c. The standby position can also be a position directly above (on the positive side in the Z-axis direction) the immersion position. In this way, by setting the standby position to a position different from the handover position, it is possible to prevent the first carrying arm 43b from contacting the second carrying arm 52c.

[0078] During the operation of the first carrying device 43, the second carrying device 52 moves the second carrying arm 52c to the immersion position or the standby position. Thus, it is possible to prevent the first carrying arm 43b from contacting the second carrying arm 52c.

[0079] The third transfer device 53 is composed of a multi-axis (e.g., six-axis) arm robot, and has a third transfer arm 53a at the front end thereof. The third transfer arm 53a has a holding claw (not shown) capable of holding one substrate W. The third transfer arm 53a is capable of taking an arbitrary position and posture in a three-dimensional space while holding the substrate W with the holding claw. The third transfer device 53 transfers the substrate W between the second handover table 54 and the second transfer arm 52c in the immersion position. At this time, since the immersion tank 51 is disposed outside the moving range of the first transfer arm 43b, the first transfer arm 43b does not interfere with the third transfer arm 53a. Thus, one of the first transfer device 43 and the third transfer device 53 can be made to operate independently of the operating state of the other. Therefore, the first transfer device 43 and the third transfer device 53 can be made to operate at an arbitrary timing, and thus the time required to transfer the substrate W can be shortened. As a result, the productivity of the substrate processing system 1 is improved.

[0080] The second handover table 54 is adjacent to the single-piece processing section 6, and is disposed at a position on the negative side of the X-axis direction of the second interface section 5. The second handover table 54 receives the substrate W from the third transfer device 53, and temporarily stores the substrate W before handing over the substrate W to the single-piece processing section 6. The second handover table 54 loads the substrate W taken out from the immersion tank 51. It is preferable that the substrate W loaded on the second handover table 54 be, for example, in a state in which the surface is wetted with the second rinse liquid. In this case, the surface tension of the second rinse liquid does not act on the substrate W, and the collapse of the concave-convex pattern of the substrate W can be suppressed. The number of the second handover table 54 can be one or a plurality. Details of the second handover table 54 will be described later.

[0081] The single-piece processing section 6 is disposed on the negative side of the X-axis direction of the second interface section 5, and on the positive side of the Y-axis direction of the carry-in / carry-out section 2, the first interface section 3, and the batch processing section 4. The single-piece processing section 6 processes the substrates W one by one. The single-piece processing section 6 has a fourth transfer device 61, a liquid processing device 62, and a drying device 63.

[0082] The fourth transfer device 61 has a guide rail 61a and a fourth transfer arm 61b. The guide rail 61a is disposed at a position on the negative side of the Y-axis direction of the single-piece processing section 6. The guide rail 61a extends in the horizontal direction (X-axis direction) in the single-piece processing section 6. The fourth transfer arm 61b moves along the guide rail 61a in the horizontal direction (X-axis direction) and the vertical direction, and rotates around the vertical axis. The fourth transfer arm 61b transfers the substrate W between the second handover table 54, the liquid processing device 62, the drying device 63, and the first handover table 33. The number of the fourth transfer arm 61b can be one or a plurality, and in the latter case, the fourth transfer device 61 collectively transfers a plurality (e.g., five) of substrates W.

[0083] The liquid processing apparatus 62 is disposed on the positive side in the X-axis direction and the positive side in the Y-axis direction of the single-wafer processing section 6. The liquid processing apparatus 62 is a single-wafer type, and processes the substrates W one by one with a processing liquid. The liquid processing apparatus 62 is disposed in multiple layers (for example, three layers) in the vertical direction (Z-axis direction). Thus, multiple substrates W can be simultaneously processed with the processing liquid. The processing liquid can be various, and for example, can be pure water such as DIW and a dry liquid having a lower surface tension than pure water. The dry liquid can be, for example, an alcohol such as IPA (isopropyl alcohol).

[0084] The drying apparatus 63 is disposed adjacent to the liquid processing apparatus 62 on the negative side in the X-axis direction. In this case, the end surface on the positive side in the Y-axis direction of the single-wafer processing section 6 can be flush or substantially flush with the end surface on the positive side in the Y-axis direction of the second interface section 5. Thus, almost no dead space is generated, and therefore, the footprint of the substrate processing system 1 can be reduced. In contrast, when the drying apparatus 63 is disposed adjacent to the liquid processing apparatus 62 on the positive side in the Y-axis direction, the end surface on the positive side in the Y-axis direction of the single-wafer processing section 6 can protrude from the end surface on the positive side in the Y-axis direction of the second interface section 5, and a dead space can be generated. The drying apparatus 63 is a single-wafer type, and dries the substrates W one by one with a supercritical fluid. The drying apparatus 63 is disposed in multiple layers (for example, three layers) in the vertical direction. Thus, multiple substrates W can be simultaneously dried.

[0085] Alternatively, both the liquid processing apparatus 62 and the drying apparatus 63 can not be single-wafer types, or the liquid processing apparatus 62 can be a single-wafer type and the drying apparatus 63 can be a batch type. The drying apparatus 63 can also dry multiple substrates W simultaneously with a supercritical fluid. The number of substrates W that are processed simultaneously in the drying apparatus 63 can be greater than or less than the number of substrates W that are processed simultaneously in the liquid processing apparatus 62. An apparatus other than the liquid processing apparatus 62 and the drying apparatus 63 can also be disposed in the single-wafer processing section 6.

[0086] The control apparatus 9 is, for example, a computer, and includes a CPU (Central Processing Unit) 91 and a recording medium 92 such as a memory. A program for controlling various processes performed in the substrate processing system 1 is stored in the recording medium 92. The control apparatus 9 controls the operation of the substrate processing system 1 by causing the CPU 91 to execute the program stored in the recording medium 92. The control apparatus 9 includes an input interface 93 and an output interface 94. The control apparatus 9 receives a signal from the outside through the input interface 93 and transmits a signal to the outside through the output interface 94.

[0087] The above program is stored in a computer-readable recording medium, for example, and is installed from the recording medium 92 to the control device 9. As the computer-readable recording medium, for example, a hard disk (HD), a floppy disk (FD), a compact disc (CD), a magneto-optical disk (MO), a memory card, or the like can be given. Further, the program can also be downloaded from a server via the Internet and installed to the recording medium 92 of the control device 9. The control device 9 is an example of a control section, and functions as a part of the substrate standby section.

[0088] In the substrate processing system 1, the substrate W is carried from the transfer-in / out section 2 in the order of the first interface section 3, the batch processing section 4, the second interface section 5, and the single piece processing section 6, and is sent back to the transfer-in / out section 2.

[0089] Details of the structure of the second handoff table

[0090] Details of the structure of the second handoff table 54 will be described with reference to Figures 2 to 5 Figure 2 is a side view showing the second handoff table 54. Figure 3 is a plan view showing an example of the placement table 111. Figure 4 is a plan view showing another example of the placement table 111. Figure 5 is a plan view showing the arrangement of the pins 115.

[0091] As shown in Figure 2 , the second handoff table 54 includes a substrate holding section 110, a pure water supply section 120, a first imaging section 131, and a second imaging section 132.

[0092] The substrate holding section 110 includes a placement table 111, a suction flow path 112, an ejector 113, a pin support member 114, a plurality of pins 115, a load sensor 116, an arm 117, and a drive source 118.

[0093] The placement table 111 has a circular plate shape. The placement table 111 holds the substrate W horizontally. As Figure 3 ​As shown, the mounting table 111 has multiple suction holes 111h. These suction holes 111h are used to remove the first liquid film LF1 adhered to the lower surface of the substrate W by suction. These suction holes 111h are used to hold the substrate W in suction. Each suction hole 111h is configured to communicate with a single suction channel 112, for example, allowing for unified adjustment of the suction force. Alternatively, each suction hole 111h may be configured to communicate with a different suction channel 112, allowing for individual adjustment of the suction force. This facilitates suction of warped substrates W. For example, in the case of a warped substrate W that is convex, suction can be performed sequentially from the periphery toward the center of the mounting table 111, making it easier to hold the substrate W in suction. For example, in the case of a warped substrate W that is convex, suction can be performed sequentially from the center toward the periphery of the mounting table 111, making it easier to hold the substrate W in suction. The multiple suction holes 111h may be arranged concentrically or radially. The number and arrangement of the plurality of suction holes 111h are not limited to Figure 3 Example shown.

[0094] like Figure 4 As shown, the mounting table 111 may also have multiple grooves 111a arranged concentrically. Each suction hole 111h is formed on the bottom surface of any groove among the multiple grooves 111a. Each suction hole 111h communicates with any groove among the multiple grooves 111a at its upper end. The multiple grooves 111a on the mounting table 111 facilitate uniform suction of the substrate W.

[0095] The suction flow path 112 connects the plurality of suction holes 111h and the ejector 113. The suction flow path 112 functions as a part of the suction mechanism.

[0096] The ejector 113 sucks the first liquid film LF1 attached to the lower surface of the substrate W through the plurality of suction holes 111h and the suction channel 112, and adsorbs the substrate W onto the mounting table 111. The ejector 113 functions as a part of the suction mechanism.

[0097] The pin support member 114 is provided below the mounting table 111 . The pin support member 114 has a disk-like shape and supports a plurality of pins 115 .

[0098] A plurality of pins 115 are provided on the pin support member 114. Figure 3 As shown in FIG, there are three pins 115 . However, the number of pins 115 may be four or more. The plurality of pins 115 supports the substrate W from below the substrate W above the pin support member 114 .

[0099] The load sensor 116 is provided at the front end of the arm 117. The pin support member 114 is provided on the load sensor 116. The load sensor 116 measures the mass of the pin support member 114, the pin 115, and the substrate W. The load sensor 116 is an example of a mass measuring section.

[0100] The arm 117 supports the load sensor 116.

[0101] The driving source 118 causes the arm 117 to be raised and lowered. Thus, the arm 117, the load sensor 116, the pin support member 114, the pin 115, and the substrate W are relatively raised and lowered with respect to the placement table 111. The driving source 118 can include a stepping motor.

[0102] The pure water supply section 120 has a nozzle 121, a pure water supply line 122, and a return line 123. The pure water supply line 122 is connected to the nozzle 121. The nozzle 121 ejects pure water supplied through the pure water supply line 122. A branch point 124 is provided in the pure water supply line 122. The return line 123 is connected to the branch point 124. Even during a period in which pure water is not ejected from the nozzle 121, pure water flows in the portion of the pure water supply line 122 that is upstream of the branch point 124 and in the return line 123. The pure water supply section 120 supplies the upper surface of the substrate W with a first amount of pure water to form a liquid film of pure water, i.e., a second liquid film LF2, on the upper surface of the substrate W. The pure water supply section 120 is an example of a processing liquid supply section.

[0103] The first imaging section 131 is provided above the placement table 111. The first imaging section 131 captures the upper surface of the substrate W placed on the placement table 111 and the substrate W supported by the plurality of pins 115 to acquire an image of the upper surface of the substrate W, i.e., an upper surface image. The first imaging section 131 can include a camera by which an image is generated. The first imaging section 131 can also include a laser light source and a camera by which an image is generated by a light cutting method. In Figure 2 In the example of FIG. 1, the first imaging section 131 is one, but the first imaging section 131 can be two or more.

[0104] The second imaging section 132 is provided laterally of the placement table 111. The second imaging section 132 captures the lower surface of the substrate W supported by the pin 115 to acquire an image of the lower surface of the substrate W, i.e., a lower surface image. The second imaging section 132 can include a camera by which an image is generated. The second imaging section 132 can also include a laser light source and a camera by which an image is generated by a light cutting method. In Figure 2 In the example of FIG. 1, the second imaging section 132 is one, but the second imaging section 132 can be two or more.

[0105] The second handoff table 54 functions as part of the substrate standby section.

[0106] Action of the substrate processing system

[0107] The action of the substrate processing system 1, i.e., the substrate processing method, involved in the embodiment will be described with reference to the flowchart shown in FIG. 6. Figure 6 Figure 6 is a flowchart showing the substrate processing method involved in the embodiment. The processing shown in Figure 6 is implemented under the control of the control device 9.

[0108] First, the cassette C is carried into the carrying-in / out section 2 in a state in which a plurality of substrates W are housed, and is placed on the load port 21. Inside the cassette C, the substrates W are held horizontally and in the vertical direction at the second pitch P2 (P2=NxP1). N is a natural number of 2 or more, and is 2 in the present embodiment, but can be 3 or more.

[0109] Next, the cassette carrying device 24 carries the cassette C from the load port 21 to the loader 23. The lid of the cassette C carried to the loader 23 is opened by the lid opening / closing mechanism.

[0110] Next, the substrate transfer device 31 receives the substrates W housed in the cassette C (S1 of Figure 6 ), and carries them to the substrate group forming section 32.

[0111] Next, the substrate group forming section 32 forms a substrate group L (S2 of Figure 6 ) by holding the plurality of substrates W at the first pitch P1 (P1=P2 / N). One substrate group L is composed of, for example, the substrates W of M cassettes C. Since the pitch of the substrates W is narrowed from the second pitch P2 to the first pitch P1, the number of substrates W that are processed uniformly can be increased.

[0112] Next, the first carrying device 43 receives the substrate group L from the substrate group forming section 32, and carries it to the processing tool 44.

[0113] Next, the processing tool 44 lowers from above the liquid tank 41, immerses the substrate group L in the liquid, and implements liquid processing (S3 of Figure 6 ). Thereafter, the processing tool 44 is raised to lift the substrate group L from the liquid, and then moves in the horizontal direction (to the negative side in the X-axis direction) toward above the rinse liquid tank 42.

[0114] Next, the processing tool 44 lowers from above the rinse liquid tank 42, immerses the substrate group L in the first rinse liquid, and implements rinse liquid processing (S3 of Figure 6 ). Thereafter, the processing tool 44 is raised to lift the substrate group L from the first rinse liquid. Next, the first carrying device 43 receives the substrate group L from the processing tool 44, and hands it over to the second carrying device 52.

[0115] ​Next, the second carrying arm 52c of the second carrying device 52 moves in the horizontal direction (to the positive side of the Y-axis direction) and descends from above the immersion tank 51 to immerse the substrate group L in the second rinse liquid (S4). The plurality of substrates W are held in the second rinse liquid until the substrate group L is lifted from the second rinse liquid by the third carrying device 53. Since the substrates W are present below the liquid surface of the second rinse liquid, the surface tension of the second rinse liquid does not act on the substrates W, and collapse of the concave-convex pattern of the substrates W can be prevented. Figure 6

[0116] Next, the third carrying device 53 carries the substrates W of the substrate group L held in the second rinse liquid by the second carrying arm 52c to the second delivery table 54. The third carrying device 53, for example, carries the substrates W to the second delivery table 54 one by one.

[0117] Next, the fourth carrying device 61 receives the substrates W from the second delivery table 54 and carries them to the liquid processing device 62.

[0118] Next, the liquid processing device 62 processes the substrates W one by one with a liquid (S5). The liquid can be various, and can be pure water such as DIW and a dry liquid having a lower surface tension than pure water. The dry liquid can be an alcohol such as IPA, for example. The liquid processing device 62 supplies pure water and a dry liquid to the upper surfaces of the substrates W in this order to form a liquid film of the dry liquid. Figure 6

[0119] Next, the fourth carrying device 61 receives the substrates W from the liquid processing device 62 and holds them horizontally with the liquid film of the dry liquid facing upward. The fourth carrying device 61 carries the substrates W from the liquid processing device 62 to the drying device 63.

[0120] Next, the drying device 63 dries the substrates W one by one with a supercritical fluid (S5). The supercritical fluid can replace the dry liquid, and thus collapse of the concave-convex pattern of the substrates W due to the surface tension of the dry liquid can be suppressed. The supercritical fluid requires a pressure-resistant container, and thus, in order to downsize the pressure-resistant container, single-piece processing is performed instead of batch processing. Figure 6

[0121] In addition, the drying device 63 is single-piece in this embodiment, but can be batch-type as described above. The batch-type drying device 63 dries a plurality of substrates W on which liquid films are formed uniformly with a supercritical fluid. In contrast, the single-piece drying device 63 has one carrying arm for holding the substrates W, and the batch-type drying device 63 has a plurality of carrying arms.

[0122] Next, the fourth carrying device 61 receives the substrates W from the drying device 63 and carries them to the first delivery table 33.

[0123] ​​​Next, the substrate transfer device 31 receives the substrate W from the first handoff table 33 and accommodates it into the cassette C (S6). The cassette C is carried out from the carrying-in / out section 2 in a state of accommodating a plurality of substrates W. Figure 6

[0124] Action of the second handoff table

[0125] (First example)

[0126] The first example of the action of the second handoff table 54 will be described with reference to the flowchart of FIG. 10. Figures 7 to 14 Figure 7 is a flowchart showing the first example of the action of the second handoff table 54. Figures 8 to 14 is a diagram showing the first example of the action of the second handoff table 54. In each of the diagrams of Figures 8 to 14 , (a) is a side view of the second handoff table 54, and (b) is a cross-sectional view of the substrate W shown in (a). The processing shown in Figure 7 is implemented under the control of the control device 9.

[0127] In step S101, when the substrate W is carried to the second handoff table 54 by the third carrying device 53, the substrate W is placed on the three pins 115 as shown in (a) of FIG. 11. At this time, as shown in (b) of FIG. 11, the liquid film of the second rinse liquid, i.e., the first liquid film LF1, is formed on the upper and lower surfaces of the substrate W. Figure 8 Figure 8

[0128] In step S102, the load sensor 116 measures the first mass including the mass of the pin support member 114, the pins 115, the substrate W, the first liquid film LF1 attached to the upper surface of the substrate W, and the first liquid film LF1 attached to the lower surface of the substrate W. The load sensor 116 transmits the measured first mass to the control device 9.

[0129] In step S103, as shown in (a) of FIG. 12, the nozzle 121 sprays the first amount of pure water toward the upper surface of the substrate W. As a result, as shown in (b) of FIG. 12, the liquid film of pure water, i.e., the second liquid film LF2, is formed on the upper surface of the substrate W. Figure 9 Figure 9

[0130] In step S104, as shown in (a) of FIG. 13, the nozzle 121 stops spraying pure water to the substrate W. At this time, as shown in (b) of FIG. 13, the second liquid film LF2 of pure water is removed from the upper surface of the substrate W. Figure 10 Figure 10 ​​​​​​​(b) of FIG. 6B, the state in which the second liquid film LF2 is formed on the upper surface of the substrate W is maintained. Next, the load sensor 116 measures a second mass including the pin support member 114, the pin 115, the substrate W, the first liquid film LF1 attached to the upper surface of the substrate W, the first liquid film LF1 attached to the lower surface of the substrate W, and the second liquid film LF2. The load sensor 116 transmits the measured second mass to the control device 9. The control device 9 calculates the mass of the second liquid film LF2 by subtracting the first mass from the second mass.

[0131] In step S105, the control device 9 determines whether or not the mass of the second liquid film LF2 is equal to or greater than a first threshold value. The first threshold value is set to, for example, a lower limit mass of the monitoring range. In a case where the mass of the second liquid film LF2 is equal to or greater than the first threshold value (YES in step S105), the control device 9 causes the process to proceed to step S106. In a case where the mass of the second liquid film LF2 is less than the first threshold value (NO in step S105), the control device 9 causes the process to proceed to step S121. In step S121, the nozzle 121 again sprays the pure water in an amount that is insufficient with respect to the target value toward the upper surface of the substrate W. After step S121, the control device 9 causes the process to return to step S104.

[0132] In step S106, as shown in (a) of FIG. 6C, the drive source 118 lowers the load sensor 116, the pin support member 114, the pin 115, and the substrate W by lowering the arm 117 to place the substrate W on the placement table 111. At this time, as shown in (b) of FIG. 6C, the state in which the second liquid film LF2 is formed on the upper surface of the substrate W is maintained. Figure 11 Figure 11 In step S107, as shown in (a) of FIG. 6D, the ejector 113 sucks the first liquid film LF1 attached to the lower surface of the substrate W via the suction flow path 112 and causes the substrate W to be adsorbed on the placement table 111. As a result, as shown in (b) of FIG. 6D, the first liquid film LF1 attached to the lower surface of the substrate W is removed.

[0133] In step S107, as shown in (a) of FIG. 6D, the ejector 113 sucks the first liquid film LF1 attached to the lower surface of the substrate W via the suction flow path 112 and causes the substrate W to be adsorbed on the placement table 111. As a result, as shown in (b) of FIG. 6D, the first liquid film LF1 attached to the lower surface of the substrate W is removed. Figure 12 Figure 12 In step S107, as shown in (a) of FIG. 6D, the ejector 113 sucks the first liquid film LF1 attached to the lower surface of the substrate W via the suction flow path 112 and causes the substrate W to be adsorbed on the placement table 111. As a result, as shown in (b) of FIG. 6D, the first liquid film LF1 attached to the lower surface of the substrate W is removed.

[0134] In step S108, as shown in (a) of FIG. 6E, the drive source 118 raises the load sensor 116, the pin support member 114, the pin 115, and the substrate W by raising the arm 117 to separate the substrate W from the placement table 111. At this time, as shown in (b) of FIG. 6E, the state in which the first liquid film LF1 is formed on the lower surface of the substrate W is maintained. Figure 12 ​​As shown in (a) of FIG. 1 , the first imaging unit 131 captures the upper surface of the substrate W placed on the mounting table 111 to obtain an image of the upper surface of the substrate W, i.e., an upper surface image. The first imaging unit 131 transmits the obtained upper surface image to the control device 9. Step S108 may be performed before or simultaneously with step S107.

[0135] In step S109, Figure 13 As shown in (a), the driving source 118 raises the arm 117 to raise the load cell 116, the pin supporting member 114, the pin 115, and the substrate W, and supports the substrate W with the pin 115, so that the substrate W is separated from the mounting table 111. Figure 13 As shown in (b), the state in which the second liquid film LF2 is formed on the upper surface of the substrate W is maintained.

[0136] In step S110, the load cell 116 measures the mass of the pin support member 114, the pins 115, the substrate W, the first liquid film LF1 attached to the upper surface of the substrate W, and the second liquid film LF2, that is, the third mass. Figure 13 As shown in (b), since the first liquid film LF1 attached to the lower surface of the substrate W is removed, the third mass does not include the mass of the first liquid film LF1 attached to the lower surface of the substrate W. The load sensor 116 transmits the measured third mass to the control device 9. The control device 9 calculates the mass of the first liquid film LF1 removed from the lower surface of the substrate W by subtracting the third mass from the second mass.

[0137] In step S111, Figure 13 As shown in (a) of FIG. 1 , the second imaging unit 132 captures the lower surface of the substrate W supported by the pins 115 to obtain an image of the lower surface of the substrate W, i.e., a lower surface image. The second imaging unit 132 transmits the obtained lower surface image to the control device 9. Step S111 may be performed before step S110 or simultaneously with step S110.

[0138] In step S112, the control device 9 determines whether the mass of the second liquid film LF2 is greater than the second threshold value. The second threshold value is a value greater than the first threshold value. The second threshold value is set to, for example, a value greater than the upper limit mass of the monitoring range. The second threshold value is set to, for example, a value smaller than the mass at which the possibility of dripping of the second liquid film LF2 attached to the upper surface of the substrate W becomes higher when the fourth conveying device 61 conveys the substrate W at a normal conveying speed. When the mass of the second liquid film LF2 is greater than the second threshold value ("Yes" in step S112), the control device 9 causes the processing to enter step S113. When the mass of the second liquid film LF2 is less than the second threshold value ("No" in step S112), the control device 9 causes the processing to enter step S131.

[0139] In step S113, the control device 9 determines whether the state of the second liquid film LF2 is normal based on the upper surface image, and determines whether the state of the lower surface of the substrate W is normal based on the lower surface image. For example, the control device 9 determines that the state of the second liquid film LF2 is normal when it is identified based on the upper surface image that the second liquid film LF2 is formed on the entire upper surface of the substrate W. For example, the control device 9 determines that the state of the second liquid film LF2 is abnormal when it is identified based on the upper surface image that the second liquid film LF2 is not formed on a part (e.g., the outer peripheral portion, the central portion) of the upper surface of the substrate W. For example, the control device 9 determines that the state of the lower surface of the substrate W is normal when it is identified based on the lower surface image that the first liquid film LF1 is not left on the lower surface of the substrate W. For example, the control device 9 determines that the state of the lower surface of the substrate W is abnormal when it is identified based on the lower surface image that the first liquid film LF1 is left on a part (e.g., the outer peripheral portion, the central portion) of the lower surface of the substrate W. The control device 9 can store the state of the second liquid film LF2 (e.g., information of normal or abnormal) and the state of the lower surface of the substrate W (e.g., information of normal or abnormal) in association with information for identifying the substrate W.

[0140] In a case where the state of the second liquid film LF2 is normal and the state of the lower surface of the substrate W is normal, as shown in (a) of Fig. 12, the control device 9 transmits an instruction to the fourth conveyance device 61 to convey the substrate W supported by the pin 115 at a low speed (step S114), and ends the process. In this case, it is possible to suppress the second liquid film LF2 from dropping from the substrate W when the fourth conveyance device 61 conveys the substrate W. The low speed conveyance refers to conveyance of the substrate W at a speed slower than the normal conveyance in which the substrate W is conveyed at a normal speed. The conveyance speed of the low speed conveyance can be half or less of the conveyance speed of the normal conveyance. Figure 14

[0141] In a case where the state of the second liquid film LF2 is normal and the state of the lower surface of the substrate W is abnormal, the control device 9 returns the process to step S106. In this case, since the substrate W on which the first liquid film LF1 is left on the lower surface is not carried out from the second handover table 54, it is possible to prevent the first liquid film LF1 from dropping from the lower surface of the substrate W in the single wafer processing section 6. In addition, the process returns to step S106, so the first liquid film LF1 attached to the lower surface of the substrate W is removed again in step S107.

[0142] In a case where the state of the second liquid film LF2 is abnormal and the state of the lower surface of the substrate W is normal, as shown in (b) of Fig. 12, the control device 9 transmits an instruction to the fourth conveyance device 61 to convey the substrate W supported by the pin 115 at a low speed (step S115), and ends the process. In this case, it is possible to suppress the second liquid film LF2 from dropping from the substrate W when the fourth conveyance device 61 conveys the substrate W. The low speed conveyance refers to conveyance of the substrate W at a speed slower than the normal conveyance in which the substrate W is conveyed at a normal speed. The conveyance speed of the low speed conveyance can be half or less of the conveyance speed of the normal conveyance. Figure 14 ​In the case where the state of the second liquid film LF2 is abnormal and the state of the lower surface of the substrate W is abnormal, as shown in (a) of FIG. 9, the control device 9 sends an instruction to the fourth conveyance device 61 to convey the substrate W supported by the pins 115 at a low speed (step S116), and ends the process. In the case where the quality of the second liquid film LF2 is equal to or greater than the second threshold value and the state of the second liquid film LF2 is abnormal, if pure water is sprayed again onto the upper surface of the substrate W, the second liquid film LF2 is likely to drip from the substrate W when the fourth conveyance device 61 conveys the substrate W. Therefore, the substrate W is conveyed to the next liquid processing device 62 without spraying pure water again onto the upper surface of the substrate W, and the process is performed as soon as possible in the liquid processing device 62. Thus, it is easy to suppress dripping of the second liquid film LF2 from the substrate W during conveyance, and it is easy to suppress collapse of the concave-convex pattern accompanying drying.

[0143] In the case where the state of the second liquid film LF2 is abnormal and the state of the lower surface of the substrate W is abnormal, as shown in (a) of FIG. 9, the control device 9 sends an instruction to the fourth conveyance device 61 to convey the substrate W supported by the pins 115 at a low speed (step S116), and ends the process. In the case where the quality of the second liquid film LF2 is equal to or greater than the second threshold value and the state of the second liquid film LF2 is abnormal, if pure water is sprayed again onto the upper surface of the substrate W, the second liquid film LF2 is likely to drip from the substrate W when the fourth conveyance device 61 conveys the substrate W. Therefore, the substrate W is conveyed to the next liquid processing device 62 without spraying pure water again onto the upper surface of the substrate W, and the process is performed as soon as possible in the liquid processing device 62. Thus, it is easy to suppress dripping of the second liquid film LF2 from the substrate W during conveyance, and it is easy to suppress collapse of the concave-convex pattern accompanying drying. Figure 14 In the case where the state of the second liquid film LF2 is abnormal and the state of the lower surface of the substrate W is abnormal, as shown in (a) of FIG. 9, the control device 9 sends an instruction to the fourth conveyance device 61 to convey the substrate W supported by the pins 115 at a low speed (step S116), and ends the process. In the case where the quality of the second liquid film LF2 is equal to or greater than the second threshold value and the state of the second liquid film LF2 is abnormal, if pure water is sprayed again onto the upper surface of the substrate W, the second liquid film LF2 is likely to drip from the substrate W when the fourth conveyance device 61 conveys the substrate W. Therefore, the substrate W is conveyed to the next liquid processing device 62 without spraying pure water again onto the upper surface of the substrate W, and the process is performed as soon as possible in the liquid processing device 62. Thus, it is easy to suppress dripping of the second liquid film LF2 from the substrate W during conveyance, and it is easy to suppress collapse of the concave-convex pattern accompanying drying.

[0144] In the case where the state of the second liquid film LF2 is abnormal and the state of the lower surface of the substrate W is abnormal, as shown in (a) of FIG. 9, the control device 9 sends an instruction to the fourth conveyance device 61 to convey the substrate W supported by the pins 115 at a low speed (step S116), and ends the process. In the case where the quality of the second liquid film LF2 is equal to or greater than the second threshold value and the state of the second liquid film LF2 is abnormal, if pure water is sprayed again onto the upper surface of the substrate W, the second liquid film LF2 is likely to drip from the substrate W when the fourth conveyance device 61 conveys the substrate W. Therefore, the substrate W is conveyed to the next liquid processing device 62 without spraying pure water again onto the upper surface of the substrate W, and the process is performed as soon as possible in the liquid processing device 62. Thus, it is easy to suppress dripping of the second liquid film LF2 from the substrate W during conveyance, and it is easy to suppress collapse of the concave-convex pattern accompanying drying.

[0145] Figure 14 In the case where the state of the second liquid film LF2 is abnormal and the state of the lower surface of the substrate W is abnormal, as shown in (a) of FIG. 9, the control device 9 sends an instruction to the fourth conveyance device 61 to convey the substrate W supported by the pins 115 at a low speed (step S116), and ends the process. In the case where the quality of the second liquid film LF2 is equal to or greater than the second threshold value and the state of the second liquid film LF2 is abnormal, if pure water is sprayed again onto the upper surface of the substrate W, the second liquid film LF2 is likely to drip from the substrate W when the fourth conveyance device 61 conveys the substrate W. Therefore, the substrate W is conveyed to the next liquid processing device 62 without spraying pure water again onto the upper surface of the substrate W, and the process is performed as soon as possible in the liquid processing device 62. Thus, it is easy to suppress dripping of the second liquid film LF2 from the substrate W during conveyance, and it is easy to suppress collapse of the concave-convex pattern accompanying drying.

[0146] ​If the second liquid film LF2 is in a normal state and the lower surface of the substrate W is in an abnormal state, the control device 9 returns the process to step S106. In this case, since the substrate W with the first liquid film LF1 remaining on its lower surface is not unloaded from the second transfer stage 54, the first liquid film LF1 can be prevented from dripping from the lower surface of the substrate W in the single-wafer processing unit 6. Furthermore, since the process returns to step S106, the first liquid film LF1 adhering to the lower surface of the substrate W is removed again in step S107.

[0147] If the state of the second liquid film LF2 is abnormal and the state of the lower surface of the substrate W is normal, the nozzle 121 again ejects pure water in an amount less than the mass shortage relative to the upper limit of the monitoring range toward the upper surface of the substrate W (step S133), and the control device 9 returns the process to step S104. In this case, the state of the second liquid film LF2 can be improved within the range where the mass of the second liquid film LF2 does not exceed the second threshold value.

[0148] If the state of the second liquid film LF2 is abnormal and the state of the lower surface of the substrate W is abnormal, the nozzle 121 again ejects pure water in an amount less than the upper limit of the monitoring range toward the upper surface of the substrate W (step S134), and the control device 9 returns the process to step S104. In this case, the state of the second liquid film LF2 can be improved within the range where the mass of the second liquid film LF2 does not exceed the second threshold value.

[0149] According to the first example of the operation of the second transfer station 54 described above, when the quality of the second liquid film LF2 is greater than the first threshold, the control device 9 determines the state of the second liquid film LF2 based on the upper surface image. In this case, coating process defects can be detected with high accuracy.

[0150] According to the first example of the operation of the second transfer stage 54, the second liquid film LF2 is formed on the upper surface of the substrate W (step S103) immediately after the load cell 116 measures the first mass (step S102). Therefore, the upper surface of the substrate W can be easily prevented from drying.

[0151] (Second example)

[0152] Reference Figures 15 to 22 A second example of the operation of the second transfer station 54 will be described. Figure 15 This is a flowchart showing a second example of the operation of the second transfer station 54 . Figures 16 to 22 : is a diagram showing a second example of the operation of the second transfer station 54. Figures 16 to 22 In each figure, Figure (a) is a side view showing the second transfer station 54, and Figure (b) is a cross-sectional view of the substrate W shown in Figure (a). Figure 15 The processing shown.

[0153] In step S201, when the substrate W is carried to the second delivery table 54 by the third carrying device 53, as shown in (a) of FIG. 10, the substrate W is placed on the three pins 115. At this time, as shown in (b) of FIG. 10, the liquid film LF1 of the second rinse liquid is formed on the upper surface and the lower surface of the substrate W. Figure 16 Figure 16

[0154] In step S202, the load sensor 116 measures the first mass including the mass of the pin support member 114, the pins 115, the substrate W, the first liquid film LF1 attached to the upper surface of the substrate W, and the first liquid film LF1 attached to the lower surface of the substrate W. The load sensor 116 transmits the measured first mass to the control device 9.

[0155] In step S203, as shown in (a) of FIG. 11, the drive source 118 lowers the load sensor 116, the pin support member 114, the pins 115, and the substrate W by lowering the arm 117 to place the substrate W on the placement table 111. At this time, as shown in (b) of FIG. 11, the first liquid film LF1 is formed on the upper surface and the lower surface of the substrate W. Figure 17 Figure 17

[0156] In step S204, as shown in (a) of FIG. 12, the ejector 113 sucks the first liquid film LF1 attached to the lower surface of the substrate W via the suction flow path 112, and adsorbs the substrate W to the placement table 111. As a result, as shown in (b) of FIG. 12, the first liquid film LF1 attached to the lower surface of the substrate W is removed. Step S204 can also be started before step S203, and can also be started from the middle of step S203, but is preferably performed after step S203, that is, after the substrate W is placed on the placement table 111. This is because if the suction is started by the ejector 113 in a state where a gap is present between the placement table 111 and the substrate W, the air of the gap is sucked and the suction efficiency is easily decreased. Figure 18 Figure 18

[0157] In step S205, as shown in (a) of FIG. 13, the drive source 118 raises the load sensor 116, the pin support member 114, the pins 115, and the substrate W by raising the arm 117, and supports the substrate W with the pins 115 to separate the substrate W from the placement table 111. At this time, as shown in (b) of FIG. 13, the first liquid film LF1 remains on the upper surface of the substrate W. Figure 19 Figure 19

[0158] ​​​​​​​​In step S206, the load cell 116 measures the mass of the pin support member 114, the pins 115, the substrate W, and the first liquid film LF1 attached to the upper surface of the substrate W, that is, the fourth mass. Figure 19 As shown in (b), since the first liquid film LF1 attached to the lower surface of the substrate W is removed, the fourth mass does not include the mass of the first liquid film LF1 attached to the lower surface of the substrate W. The load sensor 116 transmits the measured fourth mass to the control device 9. The control device 9 calculates the mass of the first liquid film LF1 removed from the lower surface of the substrate W by subtracting the fourth mass from the first mass.

[0159] In step S207, Figure 19 As shown in (a) of FIG. 1 , the second imaging unit 132 captures the lower surface of the substrate W supported by the pins 115 to obtain an image of the lower surface of the substrate W, i.e., a lower surface image. The second imaging unit 132 transmits the obtained lower surface image to the control device 9. Step S207 may be performed before step S206 or simultaneously with step S206.

[0160] In step S208, Figure 20 As shown in (a) of FIG. 1 , the nozzle 121 ejects a first amount of pure water toward the upper surface of the substrate W. As a result, as shown in FIG. Figure 20 As shown in (b), the second liquid film LF2 is formed on the upper surface of the substrate W.

[0161] In step S209, Figure 21 As shown in (a), the nozzle 121 stops spraying pure water toward the substrate W. Figure 21 As shown in (b), the state where the second liquid film LF2 is formed on the upper surface of the substrate W is maintained. Next, the load sensor 116 measures the mass of the pin support member 114, the pin 115, the substrate W, the first liquid film LF1 attached to the upper surface of the substrate W, and the second liquid film LF2, i.e., the fifth mass. Figure 21 As shown in (b), since the first liquid film LF1 attached to the lower surface of the substrate W is removed, the fifth mass does not include the mass of the first liquid film LF1 attached to the lower surface of the substrate W. The load sensor 116 transmits the measured second mass to the control device 9. The control device 9 calculates the mass of the second liquid film LF2 by subtracting the fourth mass from the fifth mass.

[0162] In step S210, Figure 21 As shown in (a) of FIG. 1 , the first imaging unit 131 captures the upper surface of the substrate W supported by the pins 115 to obtain an image of the upper surface of the substrate W, i.e., an upper surface image. The first imaging unit 131 transmits the obtained upper surface image to the control device 9. Step S210 may be performed before step S209 or simultaneously with step S209.

[0163] In step S211, the control device 9 determines whether the quality of the second liquid film LF2 is equal to or greater than the first threshold value. In a case where the quality of the second liquid film LF2 is equal to or greater than the first threshold value (YES in step S211), the control device 9 causes the process to proceed to step S212. In a case where the quality of the second liquid film LF2 is less than the first threshold value (NO in step S211), the control device 9 causes the process to proceed to step S221. In step S221, the nozzle 121 sprays pure water in an amount that is insufficient with respect to the target value toward the upper surface of the substrate W again. After step S221, the control device 9 causes the process to return to step S209.

[0164] In step S212, the control device 9 determines whether the quality of the second liquid film LF2 is equal to or greater than the second threshold value. In a case where the quality of the second liquid film LF2 is equal to or greater than the second threshold value (YES in step S212), the control device 9 causes the process to proceed to step S213. In a case where the quality of the second liquid film LF2 is less than the second threshold value (NO in step S212), the control device 9 causes the process to proceed to step S231.

[0165] In step S213, the control device 9 determines whether the state of the second liquid film LF2 is normal based on the upper surface image, and determines whether the state of the lower surface of the substrate W is normal based on the lower surface image. The determination in step S213 can be the same as the determination in step S113.

[0166] In a case where the state of the second liquid film LF2 is normal and the state of the lower surface of the substrate W is normal, as shown in (a) of Fig. 10, the control device 9 transmits an instruction to the fourth conveyance device 61 to cause it to convey the substrate W supported by the pin 115 at a low speed (step S214), and ends the process. In this case, it is possible to suppress the second liquid film LF2 from dripping from the substrate W when the fourth conveyance device 61 conveys the substrate W. Figure 22

[0167] In a case where the state of the second liquid film LF2 is abnormal and the state of the lower surface of the substrate W is normal, the control device 9 causes the process to proceed to step S241. In steps S241 to S245, the control device 9 performs the same process as steps S203 to S207, and causes the process to return to step S209. In this case, the substrate W on which the first liquid film LF1 remains on the lower surface of the substrate W is not carried out from the second handover table 54, and thus it is possible to prevent the first liquid film LF1 from dripping from the lower surface of the substrate W in the single piece processing section 6. In addition, since the process proceeds to step S241, the first liquid film LF1 adhering to the lower surface of the substrate W is removed again in step S242.

[0168] In a case where the state of the second liquid film LF2 is abnormal and the state of the lower surface of the substrate W is normal, as shown in (b) of Fig. 10, the control device 9 causes the process to proceed to step S232. In step S232, the control device 9 causes the process to return to step S209. In this case, the substrate W on which the first liquid film LF1 remains on the lower surface of the substrate W is not carried out from the second handover table 54, and thus it is possible to prevent the first liquid film LF1 from dripping from the lower surface of the substrate W in the single piece processing section 6.​Figure 22 In the case where the state of the second liquid film LF2 is abnormal and the state of the lower surface of the substrate W is abnormal, as shown in (a) of FIG. 9, the control device 9 sends an instruction to the fourth conveyance device 61 to convey the substrate W supported by the pins 115 at a low speed (step S216), and ends the process. In the case where the quality of the second liquid film LF2 is equal to or greater than the second threshold value and the state of the second liquid film LF2 is abnormal, if pure water is sprayed again to the upper surface of the substrate W, the second liquid film LF2 is likely to drip from the substrate W when the fourth conveyance device 61 conveys the substrate W. Therefore, the substrate W is conveyed to the next liquid processing device 62 without spraying pure water again to the upper surface of the substrate W, and the process is performed as soon as possible in the liquid processing device 62. Thus, it is easy to suppress the second liquid film LF2 from dripping from the substrate W during conveyance, and it is easy to suppress the collapse of the concave-convex pattern accompanying drying.

[0169] In the case where the state of the second liquid film LF2 is normal and the state of the lower surface of the substrate W is normal, as shown in (a) of FIG. 10, the control device 9 sends an instruction to the fourth conveyance device 61 to convey the substrate W supported by the pins 115 at a normal speed (step S232), and ends the process. In step S232, since the quality of the second liquid film LF2 is less than the second threshold value, the second liquid film LF2 does not or hardly drips from the substrate W even if the fourth conveyance device 61 conveys the substrate W at a normal speed. Figure 22 In the case where the state of the second liquid film LF2 is abnormal and the state of the lower surface of the substrate W is abnormal, as shown in (a) of FIG. 9, the control device 9 sends an instruction to the fourth conveyance device 61 to convey the substrate W supported by the pins 115 at a low speed (step S216), and ends the process. In the case where the quality of the second liquid film LF2 is equal to or greater than the second threshold value and the state of the second liquid film LF2 is abnormal, if pure water is sprayed again to the upper surface of the substrate W, the second liquid film LF2 is likely to drip from the substrate W when the fourth conveyance device 61 conveys the substrate W. Therefore, the substrate W is conveyed to the next liquid processing device 62 without spraying pure water again to the upper surface of the substrate W, and the process is performed as soon as possible in the liquid processing device 62. Thus, it is easy to suppress the second liquid film LF2 from dripping from the substrate W during conveyance, and it is easy to suppress the collapse of the concave-convex pattern accompanying drying.

[0170] In step S231, the control device 9 determines whether the state of the second liquid film LF2 is normal based on the upper surface image, and determines whether the state of the lower surface of the substrate W is normal based on the lower surface image. The determination of step S231 can be the same as the determination of step S213.

[0171] In the case where the state of the second liquid film LF2 is normal and the state of the lower surface of the substrate W is normal, as shown in (a) of FIG. 10, the control device 9 sends an instruction to the fourth conveyance device 61 to convey the substrate W supported by the pins 115 at a normal speed (step S232), and ends the process. In step S232, since the quality of the second liquid film LF2 is less than the second threshold value, the second liquid film LF2 does not or hardly drips from the substrate W even if the fourth conveyance device 61 conveys the substrate W at a normal speed. Figure 22

[0172] ​If the second liquid film LF2 is in a normal state and the lower surface of the substrate W is in an abnormal state, the control device 9 advances the process to step S241. In steps S241 to S245, the control device 9 performs the same processes as steps S203 to S207, and then returns to step S209. In this case, the substrate W with the first liquid film LF1 remaining on its lower surface is not unloaded from the second transfer stage 54, thereby preventing the first liquid film LF1 from dripping from the lower surface of the substrate W in the single-wafer processing unit 6. Furthermore, since the process has advanced to step S241, the first liquid film LF1 adhering to the lower surface of the substrate W is removed again in step S242.

[0173] If the state of the second liquid film LF2 is abnormal and the state of the lower surface of the substrate W is normal, the nozzle 121 again ejects pure water in an amount less than the mass shortage relative to the upper limit of the monitoring range toward the upper surface of the substrate W (step S233), and the control device 9 returns the process to step S209. In this case, the state of the second liquid film LF2 can be improved within the range where the mass of the second liquid film LF2 does not exceed the second threshold value.

[0174] If the state of the second liquid film LF2 is abnormal and the state of the lower surface of the substrate W is abnormal, the nozzle 121 again ejects pure water in an amount less than the upper limit of the monitoring range toward the upper surface of the substrate W (step S234), and the control device 9 returns the process to step S209. In this case, the state of the second liquid film LF2 can be improved within the range where the mass of the second liquid film LF2 does not exceed the second threshold value.

[0175] According to the second example of the operation of the second transfer station 54 described above, when the quality of the second liquid film LF2 is greater than the first threshold, the control device 9 determines the state of the second liquid film LF2 based on the upper surface image. In this case, coating process defects can be detected with high accuracy.

[0176] Furthermore, according to the second example of the operation of the second transfer stage 54, after the ejector 113 removes the first liquid film LF1 adhering to the lower surface of the substrate W by suction (step S204), pure water is sprayed onto the upper surface of the substrate W (step S208). This prevents the second liquid film LF2 formed on the outer periphery of the substrate W from being sucked away and disappearing.

[0177] (Third example)

[0178] Reference Figures 23 to 29 A third example of the operation of the second transfer station 54 will be described. Figure 23 This is a flowchart showing a third example of the operation of the second transfer station 54 . Figures 24 to 29 3 is a diagram showing a third example of the operation of the second transfer station 54. Figures 24 to 29In each of the drawings, Fig. (a) is a side view showing the second interface table 54, and Fig. (b) is a cross-sectional view of the substrate W shown in Fig. (a). The processing shown in Figs. (a) and (b) is performed under the control of the control device 9. Figure 23

[0179] In step S301, when the substrate W is carried to the second interface table 54 by the third carrying device 53, the substrate W is placed on the three pins 115 as shown in (a) of Fig. Figure 24 Figure 24 In (b) of Fig., a liquid film of the second rinse liquid, i.e., a first liquid film LF1 is formed on the upper surface and the lower surface of the substrate W.

[0180] In step S302, the load sensor 116 measures a first mass including the mass of the pin support member 114, the pins 115, the substrate W, the first liquid film LF1 attached to the upper surface of the substrate W, and the first liquid film LF1 attached to the lower surface of the substrate W. The load sensor 116 transmits the measured first mass to the control device 9.

[0181] In step S303, as shown in (a) of Fig. Figure 25 Figure 25 In (b) of Fig., the first liquid film LF1 is formed on the upper surface and the lower surface of the substrate W.

[0182] In step S304, as shown in (a) of Fig. Figure 26 Figure 26 In (b) of Fig., the first liquid film LF1 attached to the lower surface of the substrate W is removed. Step S304 can also be started before step S303, and can also be started halfway through step S303, but is preferably performed after step S303, i.e., after the substrate W is placed on the placement table 111. This is because if the suction is started by the ejector 113 in a state in which a gap exists between the placement table 111 and the substrate W, the air in the gap is drawn in, and the suction efficiency easily decreases.

[0183] In step S305, as shown in (a) of Fig. Figure 26 Figure 26 ​​​​​(b) of FIG. 6, the second liquid film LF2 is formed on the upper surface of the substrate W. At this time, since the substrate W is adsorbed to the stage 111, even in the case where the substrate W is warped, the pure water is ejected toward the upper surface of the substrate W in a state where the upper surface of the substrate W is flattened. Therefore, it is easy to form the second liquid film LF2 uniformly on the entire upper surface of the substrate W.

[0184] In step S306, the nozzle 121 stops ejecting the pure water toward the substrate W. At this time, as shown in Figure 26 (b) of FIG. 6, the state where the second liquid film LF2 is formed on the upper surface of the substrate W is maintained. Next, as shown in Figure 26 (a) of FIG. 6, the first imaging section 131 images the upper surface of the substrate W placed on the stage 111 to acquire an image of the upper surface of the substrate W, i.e., an upper surface image. The first imaging section 131 transmits the acquired upper surface image to the control device 9. After the end of step S306, the control device 9 can not proceed the process to step S307, but maintain the state where the substrate W is adsorbed to the stage 111 until there is an instruction to carry the substrate W to the single wafer processing section 6. In this case, it is possible to suppress the partial loss of the second liquid film LF.

[0185] In step S307, as shown in Figure 27 (a) of FIG. 6, the drive source 118 raises the load sensor 116, the pin support member 114, the pin 115, and the substrate W by raising the arm 117, and supports the substrate W with the pin 115 to separate the substrate W from the stage 111. At this time, as shown in Figure 27 (b) of FIG. 6, the state where the second liquid film LF2 is formed on the upper surface of the substrate W is maintained.

[0186] In step S308, the load sensor 116 measures a sixth mass including the mass of the pin support member 114, the pin 115, the substrate W, the first liquid film LF1 attached to the upper surface of the substrate W, and the second liquid film LF2. At this time, as shown in Figure 28 (b) of FIG. 6, since the first liquid film LF1 attached to the lower surface of the substrate W is removed, the sixth mass does not include the mass of the first liquid film LF1 attached to the lower surface of the substrate W. The load sensor 116 transmits the measured sixth mass to the control device 9. The control device 9 calculates the mass of the second liquid film LF2 by subtracting the first mass and a prescribed mass from the sixth mass. The prescribed mass can be an estimated mass estimated as the mass of the first liquid film LF1 removed from the lower surface of the substrate W. The prescribed mass can be determined in advance before the start of the process shown in Figure 23 (b) of FIG. 6. In the third example, the mass of the first liquid film LF1 removed from the lower surface of the substrate W is not calculated, and thus the prescribed mass is used.

[0187] In step S309, as shown inFigure 28 As shown in (a) of FIG. 12, the second imaging section 132 images the lower surface of the substrate W supported by the pin 115 to acquire an image of the lower surface of the substrate W, i.e., a lower surface image. The second imaging section 132 transmits the acquired lower surface image to the control device 9. Step S309 can be performed before step S308, and can also be performed concurrently with step S308.

[0188] In step S311, the control device 9 determines whether the quality of the second liquid film LF2 is equal to or greater than the first threshold value. In a case where the quality of the second liquid film LF2 is equal to or greater than the first threshold value (YES in step S311), the control device 9 causes the process to proceed to step S312. In a case where the quality of the second liquid film LF2 is less than the first threshold value (NO in step S311), the control device 9 causes the process to proceed to step S321. In step S321, the nozzle 121 sprays pure water in an amount that is insufficient with respect to the target value toward the upper surface of the substrate W. After step S321, the control device 9 causes the process to return to step S308.

[0189] In step S312, the control device 9 determines whether the quality of the second liquid film LF2 is equal to or greater than the second threshold value. In a case where the quality of the second liquid film LF2 is equal to or greater than the second threshold value (YES in step S312), the control device 9 causes the process to proceed to step S313. In a case where the quality of the second liquid film LF2 is less than the second threshold value (NO in step S312), the control device 9 causes the process to proceed to step S331.

[0190] In step S313, the control device 9 determines whether the state of the second liquid film LF2 is normal based on the upper surface image, and determines whether the state of the lower surface of the substrate W is normal based on the lower surface image. The determination of step S313 can be the same as the determination of step S113.

[0191] In a case where the state of the second liquid film LF2 is normal and the state of the lower surface of the substrate W is normal, as shown in (a) of FIG. 12, the control device 9 transmits an instruction to the fourth conveyance device 61 to convey the substrate W supported by the pin 115 at a low speed (step S314), and ends the process. In this case, it is possible to suppress the second liquid film LF2 from dripping from the substrate W when the fourth conveyance device 61 conveys the substrate W. Figure 29

[0192] ​If the second liquid film LF2 is in a normal state and the lower surface of the substrate W is in an abnormal state, the control device 9 advances the process to step S341. In steps S341, S342, and S343, the control device 9 performs the same processes as steps S303, S342, and S307, and then returns to step S308. In this case, the substrate W with the first liquid film LF1 remaining on its lower surface is not unloaded from the second transfer stage 54, thereby preventing the first liquid film LF1 from dripping from the lower surface of the substrate W in the single-wafer processing unit 6. Furthermore, since the process has advanced to step S341, the first liquid film LF1 adhering to the lower surface of the substrate W is removed again in step S342.

[0193] When the state of the second liquid film LF2 is abnormal and the state of the lower surface of the substrate W is normal, as shown in FIG. Figure 29 As shown in (a) of FIG3 , the control device 9 sends a command to the fourth transport device 61 to transport the substrate W supported by the pins 115 at a low speed (step S315), and the processing ends. If the mass of the second liquid film LF2 is greater than the second threshold value and the state of the second liquid film LF2 is abnormal, if pure water is sprayed onto the upper surface of the substrate W again, the second liquid film LF2 is likely to drip from the substrate W when the fourth transport device 61 transports the substrate W. Therefore, the substrate W is transported to the next liquid processing device 62 without spraying pure water onto the upper surface of the substrate W again, and is processed in the liquid processing device 62 as soon as possible. This makes it easier to prevent the second liquid film LF2 from dripping from the substrate W during transport, and it is easier to prevent the concave-convex pattern from collapsing due to drying.

[0194] In the case where the state of the second liquid film LF2 is abnormal and the state of the lower surface of the substrate W is abnormal, as shown in FIG. Figure 29 As shown in (a), the control device 9 sends a command to the fourth transport device 61 to transport the substrate W supported by the pins 115 at a low speed (step S316), and the processing ends. If the mass of the second liquid film LF2 is greater than the second threshold value and the state of the second liquid film LF2 is abnormal, if pure water is sprayed onto the upper surface of the substrate W again, the second liquid film LF2 is likely to drip from the substrate W when the fourth transport device 61 transports the substrate W. Therefore, the substrate W is transported to the next liquid processing device 62 without spraying pure water onto the upper surface of the substrate W again, and is processed in the liquid processing device 62 as soon as possible. This makes it easier to prevent the second liquid film LF2 from dripping from the substrate W during transport, and it is easier to prevent the concave-convex pattern from collapsing due to drying.

[0195] In step S331 , the control device 9 determines whether the state of the second liquid film LF2 is normal based on the upper surface image, and determines whether the state of the lower surface of the substrate W is normal based on the lower surface image. The determination in step S331 may be the same as that in step S313 .

[0196] In a case where the state of the second liquid film LF2 is normal and the state of the lower surface of the substrate W is normal, as shown in (a) of Fig. 32, the control device 9 sends an instruction to the fourth conveyance device 61 to normally convey the substrate W supported by the pin 115 (step S332), and ends the processing. In step S332, since the mass of the second liquid film LF2 is less than the second threshold value, the second liquid film LF2 does not or almost does not drip from the substrate W even if the fourth conveyance device 61 normally conveys the substrate W. Figure 29

[0197] In a case where the state of the second liquid film LF2 is normal and the state of the lower surface of the substrate W is abnormal, the control device 9 makes the processing proceed to step S341. In steps S341, S342, and S343, the control device 9 performs the same processing as in steps S303, S342, and S307, and makes the processing return to step S308. In this case, since the substrate W on which the first liquid film LF1 remains on the lower surface of the substrate W is not carried out from the second handover table 54, it is possible to prevent the first liquid film LF1 from dripping from the lower surface of the substrate W in the single wafer processing section 6. In addition, since the processing proceeds to step S341, the first liquid film LF1 adhering to the lower surface of the substrate W is removed again in step S342.

[0198] In a case where the state of the second liquid film LF2 is abnormal and the state of the lower surface of the substrate W is normal, the nozzle 121 sprays pure water in an amount less than the upper limit mass with respect to the monitoring range again toward the upper surface of the substrate W (step S333), and the control device 9 makes the processing return to step S308. In this case, it is possible to improve the state of the second liquid film LF2 within a range in which the mass of the second liquid film LF2 does not become equal to or more than the second threshold value.

[0199] In a case where the state of the second liquid film LF2 is abnormal and the state of the lower surface of the substrate W is abnormal, the nozzle 121 sprays pure water in an amount less than the upper limit mass with respect to the monitoring range again toward the upper surface of the substrate W (step S334), and the control device 9 makes the processing return to step S308. In this case, it is possible to improve the state of the second liquid film LF2 within a range in which the mass of the second liquid film LF2 does not become equal to or more than the second threshold value.

[0200] According to the third example of the operation of the second handover table 54 described above, in a case where the mass of the second liquid film LF2 is equal to or more than the first threshold value, the control device 9 determines the state of the second liquid film LF2 based on the upper surface image. In this case, it is possible to detect a defect of the coating processing with high accuracy.

[0201] ​Further, according to a third example of the operation of the second delivery table 54, the nozzle 121 ejects pure water toward the upper surface of the substrate W in a state where the substrate W is adsorbed to the placement table 111. Therefore, even in the case where the substrate W is warped, it is possible to eject pure water toward the upper surface of the substrate W in a state where the upper surface of the substrate W is flattened. Therefore, it is easy to form the second liquid film LF2 uniformly over the entire upper surface of the substrate W.

[0202] It should be understood that the embodiments disclosed herein are illustrative in all respects and are not restrictive. The embodiments described above can be omitted, replaced, or changed in various ways without departing from the scope of the appended claims and the spirit thereof.

[0203] Explanation of Reference Signs

[0204] 9: control device; 54: second delivery table; 110: substrate holding portion; 116: load sensor; 120: pure water supply portion; 131: first imaging portion; LF1: first liquid film; LF2: second liquid film; W: substrate.

Claims

1. A substrate standby section characterized by comprising: A substrate having a first liquid film attached to an upper surface and a lower surface is held by the substrate holding section, and the substrate holding section includes: a processing liquid supply section that supplies a first amount of a processing liquid to the upper surface of the substrate to form a second liquid film; a mass measurement section that measures a mass of the second liquid film; a first imaging section that acquires an image of the upper surface of the substrate, i.e., an upper surface image; and a liquid film state determination section that determines a state of the second liquid film using the upper surface image.

2. The substrate holding section according to claim 1, further comprising: a suction mechanism that suctions the lower surface of the substrate to remove the first liquid film attached to the lower surface of the substrate.

3. The substrate holding section according to claim 2, wherein: the stage horizontally holds the substrate, the stage has a plurality of suction holes connected to the suction mechanism.

4. The substrate standby section according to claim 3, wherein Further comprising: a plurality of pins that support the substrate; and a drive source that relatively raises and lowers the plurality of pins with respect to the stage.

5. The substrate holding section according to any one of claims 1 to 4, further comprising: a second imaging section that acquires an image of the lower surface of the substrate, i.e., a lower surface image.

6. The substrate holding section according to claim 5, further comprising: a lower surface state determination section that determines a state of the lower surface of the substrate using the lower surface image.

7. A substrate processing system, comprising: the substrate holding section according to any one of claims 1 to 6.

Images