Power electronic component and system including the same

Abstract

The utility model relates to a power electronic component and a system including the same. The power electronic component comprises a housing (2) having a recess (3), a cover (4) covering the recess (3), at least one power semiconductor module (7) and a heat sink (8). Wherein the at least one power semiconductor module (7) and the heat sink (8) are arranged inside the housing (2), and the cover (4) comprises through-holes arranged at grid points of the grid. The system includes at least two power electronic components.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a power electronic component and to a system comprising a power electronic component. BACKGROUND

[0002] Typically, a bond wire connects a terminal lead to a semiconductor chip. In the presence of a comparatively large short circuit current, the bond wire vaporizes, resulting in a severe electric arc discharge inside the typical package of the semiconductor chip and leading to an explosion. SUMMARY

[0003] It is an object of the present disclosure to provide a power electronic component with improved protection. Further embodiments relate to a system comprising such a power electronic component.

[0004] This is achieved by the subject matter of the independent claims. Further embodiments are evident from the dependent claims and the following description.

[0005] A power electronic component is described. The term “power” here and in the following refers, for example, to power semiconductor chips which the power electronic component particularly comprises, the power semiconductor chips being adapted to handle voltages and currents greater than 100 V and / or greater than 10 A, exemplarily voltages up to 10 kV and currents up to 10 kA.

[0006] According to an embodiment, the power electronic component comprises a housing having a recess. The housing exemplarily defines a cavity. The housing is exemplarily configured to accommodate elements of the power electronic component. In particular, at least some or all of the elements of the power electronic component are arranged within the cavity. For example, the housing is configured to provide structural support for at least some of the elements. In particular, at least some of the elements are connected to the housing in a mechanically fixed manner.

[0007] For example, the housing comprises a housing wall. In particular, the recess extends completely through the housing wall. The recess, for example, provides a through-hole to the cavity.

[0008] The housing comprises, for example, a metallic material, such as steel, aluminum and / or copper, a composite material and / or a plastic material.

[0009] According to an embodiment, the power electronic component comprises a cover covering the recess. Exemplarily, the housing and the cover delimit the cavity, in particular three-dimensionally. In particular, the cover at least regionally or completely covers the recess. If the cover completely covers the recess, the housing and the cover completely enclose the cavity and, thus, at least some or all of the elements of the power electronic component.

[0010] The recess extends along a main extension plane. The main extension plane of the cover extends, for example, substantially parallel to the main extension plane of the recess. "Substantially" here means that the main extension plane of the recess and the main extension plane of the cover enclose an angle of at most 5°, in particular at most 1°.

[0011] According to this embodiment, the power electronics component comprises at least one power semiconductor module. The power semiconductor module comprises, for example, at least one power semiconductor chip. Exemplarily, the power semiconductor chip is connected to a wiring, which comprises, for example, at least one bonding wire.

[0012] The power semiconductor chip comprises, for example, a semiconductor material, such as at least one of silicon (Si), silicon carbide (SiC) and gallium nitride (GaN). The power semiconductor chip is, for example, a power diode and / or a power metal-insulated semiconductor field effect transistor (abbreviated as power MISFET). The term MISFET shall also include MOSFET, which has an oxide as insulating material at the gate. The power semiconductor chip can also be an insulated gate bipolar transistor IGBT.

[0013] The power semiconductor chip exemplarily comprises, for example, a carrier on which the power semiconductor chip is arranged. Exemplarily, the carrier comprises a printed circuit board and / or a lead frame, which comprises a plurality of signal lines. Exemplarily, the wiring connects the printed circuit board and / or the lead frame with the power semiconductor chip. In particular, the carrier comprises an electrically insulating substrate, which comprises an insulating sheet, which comprises a ceramic or a resin.

[0014] According to an embodiment, the power electronics component comprises a heat sink. The power semiconductor module is exemplarily arranged on the heat sink. In particular, the carrier is arranged on the heat sink. The heat sink comprises, for example, fins and / or other structures configured to increase the surface area and in particular to improve the cooling efficiency. The heat sink is exemplarily configured to absorb and dissipate heat from the power semiconductor chip.

[0015] If the power electronics component comprises more than one power semiconductor module, these power semiconductor modules are arranged on the heat sink. In particular, the heat sink is a common heat sink for the power semiconductor modules.

[0016] According to an embodiment of the power electronics component, the at least one power semiconductor module and the heat sink are arranged inside a housing. In particular, the power semiconductor module and the heat sink are elements of the power electronics component. The power semiconductor module and the heat sink are particularly arranged within a cavity.

[0017] For example, the heat sink is connected to the housing in a mechanically fixed manner and the power semiconductor module is arranged on the heat sink.

[0018] According to an embodiment of the power electronic component, the cover comprises through-holes arranged at grid points of a grid. The grid can be a regular grid or an irregular grid. The grid is, for example, a polygonal grid, such as a triangular grid, a quadrangular grid or a hexagonal grid. The grid points are located at intersections of the respective grid lines of the grid. In particular, the grid, the grid lines and the grid points have a virtual nature.

[0019] The through-holes extend through the cover in a direction perpendicular to the main extension plane of the cover, in particular completely through the cover.

[0020] During the failure event, the wiring and / or parts of the power semiconductor chips of the power semiconductor module vaporize. In particular, the failure event exemplarily leads to an explosion, which comprises a hot plasma and debris caused by the vaporization. The failure event is, for example, a characteristic of a short circuit event (e.g., of an electronic component of the power semiconductor module). In particular, if the hot plasma and / or the debris are not contained, the hot plasma leads to a catastrophic damage.

[0021] In summary, the power electronic component advantageously uses the cover. During the failure event, the hot plasma advantageously passes through the through-holes of the cover, while the cover is configured to filter the debris and to cool down the hot plasma. By giving the explosion space to expand, the pressure increase in the cavity is minimal and, thus, the housing does not have to be comparably robust. Thus, the housing can be realized in a particularly cost-saving manner.

[0022] Furthermore, the capturing of the debris advantageously prevents damage to other nearby power electronic components. Additionally, the comparably large surface area of the cover with the through-holes advantageously slows down the speed of the hot plasma and contributes to an efficient cooling.

[0023] Advantageously, the use of the cover realizes a cost-effective and low-complexity design. Furthermore, there is no additional loss. The cover can advantageously be combined with other protective measures. Additionally and advantageously, the footprint is not increased.

[0024] According to a further embodiment of the power electronic component, the cover and the housing completely enclose the at least one power semiconductor module and the heat sink. In particular, the cover and the housing three-dimensionally enclose the at least one power semiconductor module and the heat sink in space.

[0025] According to a further embodiment of the power electronic component, the cover is a perforated sheet metal. In particular, the perforated sheet metal is a perforated sheet metal.

[0026] Exemplarily, in a plan view of the main extension plane of the cover, the through-holes can have a shape that is circular, elliptical or polygonal.

[0027] According to a further embodiment of the power electronic component, the cover is a mesh comprising interlaced fibers forming a grid structure. At least some or all of the fibers are characteristic for forming an interconnecting network having a pattern with uniform spacing or non-uniform spacing. The network is characteristic for the grid structure. The grid structure can be characteristic for a regular grid having uniform spacing or an irregular grid having non-uniform spacing.

[0028] The grid structure is for example represented by a polygonal grid, such as a triangular grid, a quadrilateral grid or a hexagonal grid. In particular, the fibers are arranged along grid lines of the polygonal grid such that the grid structure is formed.

[0029] According to a further embodiment of the power electronic component, the mesh comprises a plurality of through-holes spaced apart by the interlaced fibers. At least some or all of these through-holes exemplarily provide a direct path and / or an indirect path from the cavity through the mesh to the environment of the power electronic component.

[0030] The size of at least some of the through-holes can be substantially equal, wherein the size is exemplarily defined as the maximum extension of the through-hole along the main extension direction of the mesh. “Substantially equal” means here and in the following that the size of at least 50% or at least 80% of the through-holes differs from each other by at most 30% or at most 10%.

[0031] According to a further embodiment of the power electronic component, the through-holes have an extension, in particular a maximum extension, of at most 5 mm along the main extension direction of the cover. Exemplarily, the through-holes have an extension of at most 2 mm or at most 1 mm along the main extension direction of the cover.

[0032] With such sized through-holes, the hot plasma can advantageously exit the cavity such that the pressure in the cavity does not exist a comparably large increase due to the explosion. Furthermore, debris of the explosion is advantageously captured by such sized through-holes.

[0033] In particular, at least 50%, at least 80% or at least 90% of the debris is captured by the cover.

[0034] According to a further embodiment of the power electronic component, the fibers comprise at least one metallic material. Exemplarily, the metallic material comprises stainless steel, aluminum, copper, nickel, titanium, gold, silver and / or alloys thereof.

[0035] The metallic material has a thermal conductivity of for example at least 100 W / (m*K), at least 300 W / (m*K) or at least 400 W / (m*K). Thus, advantageously, the hot plasma can be efficiently cooled down.

[0036] According to a further embodiment of the power electronic component, the fibers are interwoven in a plain weave, a twill weave or a Dutch weave. It is possible that the fibers are interwoven according to a combination of at least two of the plain weave, the twill weave and the Dutch weave.

[0037] The fibers are exemplarily divided into at least two groups of fibers, wherein the groups mainly extend along different directions.

[0038] Exemplarily, the first group of fibers mainly extends along a first direction within a main extension plane of the mesh. For example, the second group of fibers mainly extends along a second direction within the main extension plane of the mesh, the second direction being different from the first direction. “Mainly” means here and in the following that the fibers of the respective group enclose an angle of at most 30°, at most 10° or at most 5° with the respective direction. Exemplarily, the first direction and the second direction enclose an angle of at least 30° and / or at most 120°, in particular approximately 90°, with each other.

[0039] For example, the fibers of the first group are the warp and the fibers of the second group are the weft. Exemplarily, for a plain weave, each weft thread passes alternately over and under each warp thread. Exemplarily, for a twill weave, each weft thread passes alternately over one or more warp threads and then under two or more other warp threads. Exemplarily, for a Dutch weave, at least some weft threads pass alternately under one warp thread and over multiple warp threads.

[0040] The spacings of the fibers of the different groups can be equal or different from each other. The spacings of the fibers of the same group can be equal or different from each other. The fibers of the different groups can have the same or different diameters. The fibers of the same group can have the same or different diameters.

[0041] Exemplarily, the diameters of the fibers corresponding to the warp, i.e. corresponding to the first group, are larger than the diameters of the fibers corresponding to the weft, i.e. corresponding to the second group. For example, the spacings of the fibers corresponding to the warp, i.e. corresponding to the first group, are larger than the spacings of the fibers corresponding to the weft, i.e. corresponding to the second group. With such a weave, in particular a Dutch weave, the mesh is advantageously more robust and durable and advantageously has very efficient filtering properties.

[0042] According to a further embodiment, the housing has at least one side surface and the cover is attached to the at least one side surface. In particular, the cover is attached to the at least one side surface in a mechanically fixed manner, in particular by a connecting element. The connecting element is for example configured to fix the cover to the at least one side surface during normal operation as well as during an explosion.

[0043] The connecting element can be a mechanical element, such as a screw, a clamp, a zipper and / or a rivet. Alternatively or additionally, the connecting element can be a brazing connection and / or a welding connection.

[0044] According to a further embodiment, the housing has an outer surface, the recess is arranged in the outer surface, and the cover is attached to the outer surface in a region surrounding the recess. Exemplarily, the outer surface is directly connected to the side surface. The outer surface extends, for example, obliquely to the side surface. Exemplarily, the outer surface extends perpendicular to the side surface.

[0045] Exemplarily, the region completely surrounds the recess laterally. The cover is attached to the region, for example, in a mechanically fixed manner, in particular by means of a connecting element.

[0046] According to a further embodiment, the at least one power semiconductor module is arranged on the heat sink.

[0047] According to a further embodiment, the at least one power semiconductor module is connected to the first busbar at a side facing the cover. The first busbar is arranged, for example, between the cover and the power semiconductor module. The first busbar exemplarily provides an electrical interconnection of the power semiconductor module.

[0048] According to a further embodiment, the at least one power semiconductor module is connected to the second busbar at a side facing away from the cover. The power semiconductor module is arranged, for example, between the first busbar and the second busbar. The second busbar exemplarily provides a further electrical interconnection of the power semiconductor module.

[0049] According to a further embodiment, the second busbar is connected to at least one capacitor. In particular, the capacitor is connected to the second busbar at a side facing away from the cover. The second busbar exemplarily provides a further electrical interconnection of the power semiconductor module and the capacitor.

[0050] According to a further embodiment, the power electronics component comprises at least one power semiconductor bridge comprising at least one power semiconductor module. Exemplarily, each power semiconductor module comprises several semiconductor chips arranged in a full-bridge configuration and / or a half-bridge configuration. Each power semiconductor module is connected, for example, to the first busbar and / or the second busbar.

[0051] According to a further embodiment, the power semiconductor module comprises at least one insulated gate bipolar transistor, IGBT. In particular, at least one power semiconductor chip of the power semiconductor module is an IGBT.

[0052] According to a further embodiment, the power semiconductor bridges are connected in parallel. In particular, the power semiconductor bridges are connected in parallel by means of the first busbar and the second busbar.

[0053] A further embodiment relates to a system comprising a power electronics component, in particular comprising a power electronics component as described above. Thus, features as described in connection with the system comprising a power electronics component also apply to the power electronics component and vice versa.

[0054] According to embodiments, the system comprising power electronic components comprises at least two power electronic components. At least one of the two power electronic components is a power electronic component as described above.

[0055] Exemplarily, the power electronic components are stacked on top of each other along a stacking direction. Exemplarily, the stacking direction is parallel to the main extension plane of the cover. For example, side surfaces of directly adjacent power electronic components are stacked on top of each other.

[0056] Exemplarily, none of the covers of the power electronic components stacked on top of each other faces an adjacent power electronic component. Thus, advantageously, if a power electronic component fails, another power electronic component is protected from exploding debris.

[0057] According to further embodiments of the system comprising power electronic components, one of the covers of the power electronic components facing another power electronic component comprises a shielding portion facing the cover.

[0058] Exemplarily, the at least two power electronic components can be arranged next to each other, spaced apart from each other along a lateral direction. The cover of at least one of the two power electronic components faces, for example, the other power electronic component. The shielding portion is arranged, for example, on a surface of the cover facing the other power electronic component.

[0059] The shielding portion comprises, for example, an electrically insulating material.

[0060] Advantageously, if a power electronic component fails and explodes, the cover advantageously causes all debris to be captured and the plasma caused by the explosion to cool down, thus protecting the other power electronic component. The other power electronic component is advantageously further protected by the shielding portion.

[0061] Exemplarily, the stacked power electronic components form a group of power electronic components. The system comprising power electronic components can comprise at least two groups of power electronic components, which are, for example, arranged next to each other, spaced apart from each other along a lateral direction.

[0062] At least one of the groups can comprise a common shielding portion. The common shielding portion corresponds to the shielding portion described above. The common shielding portion exemplarily extends over a surface of the covers of the power electronic components of one group facing the other power electronic components arranged next to the other group.

[0063] For example, all power electronic components have a cover as described above. Exemplarily, all power electronic components, in particular all groups, can have a shielding portion, in particular a common shielding portion, as described above. BRIEF DESCRIPTION OF DRAWINGS

[0064] The accompanying drawings are included to provide a further understanding. In the drawings, like reference numerals refer to like structures and / or functions throughout the various figures. It will be understood that the embodiments shown in the drawings are illustrative only and not necessarily drawn to scale.

[0065] Figure 1 and Figure 2 Each shows a schematic of a power electronic component according to exemplary embodiments.

[0066] Figure 3 A schematic of a system comprising a power electronic component according to exemplary embodiments is shown.

[0067] Reference signs

[0068] Power electronic component 1, housing 2, recess 3, cover 4, power semiconductor module 7, heat sink 8, first busbar 9, second busbar 10, capacitor 11, system comprising a power electronic component 12, shielding 13. DETAILED DESCRIPTION

[0069] According to Figure 1 The power electronic component 1 according to exemplary embodiments comprises a housing 2. The housing 2 has side surfaces extending in a main extension plane (e.g., along a lateral direction). These side surfaces comprise a first side surface and a second side surface. The first side surface and the second side surface are connected by a further outer surface extending perpendicular to the main extension plane of these side surfaces (e.g., along a vertical direction). The housing 2 has a recess 3 opposite the further outer surface.

[0070] The housing 2 defines a cavity in which elements of the power electronic component 1 are arranged. The recess 3 provides a through-hole to the cavity.

[0071] Further, the power electronic component 1 comprises a cover 4 (in particular a mesh) covering the recess 3. The cover 4 completely covers the recess 3. The housing 2 and the cover 4 delimit the cavity. In particular, the housing 2 and the cover 4 three-dimensionally (i.e., along the lateral direction and the vertical direction) enclose at least some of all elements of the power electronic component 1.

[0072] The mesh in particular comprises interwoven fibers forming a grid structure. The interwoven fibers are arranged such that the mesh comprises a plurality of through-holes. At least some or all of these through-holes provide a direct path and / or an indirect path from the cavity through the cover 4 to an environment of the power electronic component 1.

[0073] The power electronic component 1 comprises power semiconductor modules 7 (in this embodiment four power semiconductor modules 7). The power semiconductor modules 7 are arranged on a heat sink 8, in particular on a common heat sink 8 for the power semiconductor modules 7.

[0074] Additionally, the power electronic component 1 comprises capacitors 11 (in this embodiment four capacitors 11), a first busbar 9 and a second busbar 10. The first busbar 9 is arranged at a side facing the cover 4. The capacitors 11 and the second busbar 10 are arranged at a side facing away from the cover 4. Each power semiconductor module 7 comprises power semiconductor chips arranged in a bridge topology. Thus, each power semiconductor module 7 can be a power semiconductor bridge. The power semiconductor modules 7 are connected in parallel, in particular by the first busbar 9 and the second busbar 10.

[0075] At least some or all of the power semiconductor chips of one power semiconductor module 7 are exemplarily formed by IGBTs.

[0076] The first busbar 9 is arranged between the power semiconductor modules 7 and the cover 4. The second busbar 10 is arranged between the power semiconductor modules 7 and the capacitors 11. In particular, the capacitors 11, the first busbar 9, the second busbar 10 and the heat sink 8 are each connected to the housing 2 in a mechanically fixed manner.

[0077] In a Figure 1 , the power electronic component 1 is in a normal state, for example when no failure event occurs.

[0078] In a Figure 2 , the power electronic component 1 is in a failure state, for example when a failure event occurs. When a failure event occurs, a hot plasma advantageously passes through the cover 4 through the through-hole of the cover 4, while the cover 4 is configured to filter debris and to cool down the hot plasma, wherein the hot plasma is indicated by the arrow.

[0079] According to an exemplary embodiment of Figure 3 , the system 12 comprising power electronic components comprises two groups of power electronic components 1, which are arranged next to each other laterally and are spaced apart from each other in a lateral direction. Each group comprises power electronic components 1 stacked above each other in a vertical direction.

[0080] Furthermore, at least some or all of the power electronic components 1 of at least some or all groups are provided with a cover 4.

[0081] In the failure state of one of the power electronic components 1, the hot plasma is cooled down and the debris is filtered (indicated by the arrow), so that the other power electronic converters are protected.

[0082] Additionally, at least one or all groups can comprise a common shielding portion 13 facing the cover 4 of the adjacent group. In particular, the common shielding portion 13 is arranged on a further outer surface of the housing 2 of the power electronic component 1. The common shielding portion 13 is advantageously configured for reinforcing the housing 2.

[0083] The exemplary embodiments of the drawings, in particular the features of the exemplary embodiments, can be combined with each other.

Claims

1. A power electronic component (1), characterized in that Comprising: - a housing (2) having a recess (3), - a cover (4) covering the recess (3), - at least one power semiconductor module (7), and - a heat sink (8), wherein - the at least one power semiconductor module (7) and the heat sink (8) are arranged inside the housing (2), and - the cover (4) comprises through-holes arranged at grid points of a grid.

2. The power electronics component (1) according to claim 1, characterized in that Wherein - the cover (4) and the housing (2) completely enclose the at least one power semiconductor module (7) and the heat sink (8).

3. The power electronic component (1) according to claim 1 or 2, characterized in that Wherein - the cover (4) is a perforated plate, or - the cover (4) is a mesh comprising interlaced fibers forming a grid structure, and - the mesh comprises the plurality of through-holes spaced apart by the interlaced fibers.

4. The power electronic component (1) according to claim 1 or 2, characterized in that Wherein - the through-holes have an extension of at most 5 mm along a main extension direction of the cover (4).

5. The power electronics component (1) according to claim 3, characterized in that Wherein - the fibers are interlaced in a plain weave, a twill weave or a holland weave.

6. The power electronics component (1) according to claim 1 or 2, characterized in that Wherein - the housing (2) has at least one side surface, and - the cover (4) is attached to the at least one side surface.

7. The power electronic component (1) according to claim 1 or 2, characterized in that Wherein - the housing (2) has an outer surface, - the cover (4) is arranged in the outer surface, and - the cover (4) is attached to the outer surface in an area enclosing the recess (3).

8. The power electronic component (1) according to claim 1 or 2, characterized in that Wherein - the at least one power semiconductor module (7) is arranged on the heat sink (8).

9. The power electronic component (1) according to claim 1 or 2, characterized in that Wherein - the at least one power semiconductor module (7) is connected to a first busbar (9) at a side facing the cover (4).

10. The power electronic component (1) according to claim 1 or 2, characterized in that Wherein - the at least one power semiconductor module (7) is connected to a second busbar (10) at a side facing away from the cover (4), and - the second busbar (10) is connected to at least one capacitor (11).

11. The power electronic component (1) according to claim 1 or 2, characterized in that Wherein - the power electronics component (1) comprises at least one power semiconductor bridge, - the power semiconductor bridge comprises at least one power semiconductor module (7), and - the power semiconductor module (7) comprises at least one insulated gate bipolar transistor IGBT.

12. The power electronics component (1) according to claim 11, characterized in that Wherein - the power semiconductor bridge is connected in parallel.

13. A system (12) comprising power electronic components, characterized in that, Comprising: - at least two power electronics components (1) according to any one of claims 1 to 12.

14. The system (12) of claim 13, characterized by Wherein - one of the covers (4) of the power electronics components (1) facing the other power electronics component (1) comprises a shielding portion (13) facing the cover (4).

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