Power module and electronic device

Abstract

The utility model discloses a power module and an electronic device. The power module comprises an RC-IGBT; the driving integrated circuit is electrically connected with the RC-IGBT; the heat dissipation substrate is provided with a first surface and a second surface which are oppositely arranged, and the RC-IGBT is arranged on the first surface of the heat dissipation substrate; the RC-IGBT, the heat dissipation substrate and the driving integrated circuit are packaged through the packaging resin, at least part of the second face of the heat dissipation substrate is exposed out of the packaging resin, and the aspect ratio of the RC-IGBT is smaller than or equal to 1.61; the length of the packaging resin in the length direction is less than or equal to 36.5 mm; the width of the packaging resin in the width direction is less than or equal to 20mm; and the rated current of the RC-IGBT is defined as I, and I meets the relational expression that I is larger than or equal to 26A and smaller than or equal to 35A. According to the power module provided by the embodiment of the invention, the miniaturization of the power module can be realized, and the failure probability of the RC-IGBT chip is remarkably reduced.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and more particularly to a power module and an electronic device. Background Art

[0002] Power modules used to drive motors consist of power chips and driver integrated circuits. Compared to traditional discrete devices, they offer advantages such as high integration and reliability, making them widely used. The trend toward miniaturization of power modules requires smaller product sizes. However, the increased current required for power modules requires larger chips, which can lead to larger product sizes. Furthermore, increased temperatures at higher currents can lead to reliability issues. Therefore, achieving a power module that combines miniaturization, high current capability, and high reliability has become a pressing issue. Utility Model Content

[0003] The Summary of the Utility Model introduces a series of simplified concepts that will be further described in the Detailed Description of the Implementation Method. The Summary of the Utility Model of this application is not intended to limit the key features and essential technical features of the claimed technical solution, nor is it intended to determine the scope of protection of the claimed technical solution.

[0004] In order to at least partially solve the above problems, according to a first aspect of the present application, a power module is provided, comprising:

[0005] RC-IGBT;

[0006] A driver integrated circuit, the driver integrated circuit is electrically connected to the RC-IGBT;

[0007] A heat dissipation substrate (30), the heat dissipation substrate (30) having a first surface and a second surface arranged opposite to each other, wherein the RC-IGBT is arranged on the first surface of the heat dissipation substrate (30);

[0008] The encapsulation resin encapsulates the RC-IGBT, the heat dissipation substrate (30) and the driver integrated circuit, wherein at least a portion of the second surface of the heat dissipation substrate (30) is exposed from the encapsulation resin,

[0009] The aspect ratio of the RC-IGBT is less than or equal to 1.61;

[0010] The length of the encapsulating resin in the longitudinal direction is less than or equal to 36.5 mm;

[0011] The width of the encapsulating resin in the width direction is less than or equal to 20 mm; and

[0012] The rated current of the RC-IGBT is defined as I, where I satisfies the relationship: 26A≤I≤35A.

[0013] The technical scheme has the following advantages and beneficial effects: according to the power module in the embodiment of the application, by using RC-IGBT as a semiconductor switching element, and by packaging a large-current specification (26A≤I≤35A) RC-IGBT in a small packaging resin, and by reducing the aspect ratio of the RC-IGBT, the stress concentration and non-uniform high-temperature thermal expansion of the large-current specification (26A≤I≤35A) RC-IGBT are improved while the power module is miniaturized, the RC-IGBT chip failure probability is significantly reduced, and the reliability of the power module is improved.

[0014] Exemplarily, the aspect ratio of the RC-IGBT is also greater than 1.18.

[0015] The technical scheme has the following advantages and beneficial effects: according to the current circuit pattern design on the heat dissipation substrate, the transverse size of the power side pad for connecting the RC-IGBT is much smaller than the longitudinal size, and the RC-IGBT transverse variable size is much smaller than the chip longitudinal variable size, so the large RC-IGBT width is not conducive to the miniaturization of the semiconductor device, therefore, the aspect ratio of the RC-IGBT is also greater than 1.18, that is, the longitudinal size is relatively large, which can be more conducive to the miniaturization of the semiconductor device.

[0016] Exemplarily, the length of the length direction of the packaging resin is also greater than or equal to 31.5mm; and

[0017] The width of the width direction of the packaging resin is also greater than or equal to 16mm.

[0018] The technical scheme has the following advantages and beneficial effects: by keeping the size of the packaging resin within the above range, the product miniaturization can be facilitated, the demand for 26A≤I≤35A current specification can be met as much as possible, a larger current specification can be packaged in a relatively small packaging resin, the problem of higher chip temperature and greater thermal stress due to the small size of the packaging resin is inhibited, and the chip failure probability is further reduced.

[0019] Exemplarily, the area of the heat dissipation substrate is S, S satisfies the relationship: 161.25mm 2 ≤S≤275mm 2 .

[0020] The technical scheme has the following advantages and beneficial effects: the packaging resin can meet the space requirement of the driving side frame or the driving side PCB (printed circuit board) for carrying a driving integrated circuit, and the packaging resin can also meet the space requirement of the heat dissipation substrate for dissipating heat of the power chip (such as IGBT and FRD, or RC-IGBT).

[0021] Exemplarily, the width of the RC-IGBT is greater than or equal to 2.0 mm and less than or equal to 3.4 mm.

[0022] The technical solution has the following advantages and beneficial effects: through such a setting, the value of the aspect ratio of the RC-IGBT cannot be too large, thereby reducing the chip failure probability, and the overall size of the product is not increased.

[0023] Exemplarily, the first surface side of the heat dissipation substrate has a power side pad, and the RC-IGBT is arranged on the power side pad.

[0024] The technical solution has the following advantages and beneficial effects: the power side pad of the first surface of the heat dissipation substrate can realize the lead-out of the RC-IGBT for electrical connection with other components, and the direct arrangement of the RC-IGBT on the power side pad can realize the direct electrical connection of the RC-IGBT, thereby optimizing the wiring of the power module and making the structure simpler.

[0025] Exemplarily, the heat dissipation substrate comprises:

[0026] an insulating layer having a first surface and a second surface opposite to the first surface, wherein the insulating layer is at least one of an aluminum nitride ceramic layer or a silicon nitride ceramic layer;

[0027] a conductive layer arranged at least on the first surface of the insulating layer, wherein the conductive layer comprises:

[0028] a first conductive layer arranged on the first surface, or

[0029] a first conductive layer arranged on the first surface and a second conductive layer arranged on the second surface,

[0030] wherein the surface of the first conductive layer away from the insulating layer constitutes at least part of the first surface of the heat dissipation substrate, and the first conductive layer comprises the power side pad.

[0031] The technical solution has the following advantages and beneficial effects: by using a ceramic material with a higher thermal conductivity than Al2O3, the heat dissipation property of the heat dissipation substrate can be improved, so that the heat generated by the RC-IGBT, the conductive layer and the like can be dissipated, which is conducive to reducing the temperature of the power module and thereby inhibiting the accumulation of heat during the operation of the power module, thereby ensuring safety. In addition, the insulating layer can also have an insulating effect, which can isolate the conductive layer electrically connected to the RC-IGBT from external electrical connection, thereby ensuring the normal operation of the power module and improving the electrical safety of the power module.

[0032] Exemplarily, the number of RC-IGBTs is multiple, the number of power side pads is multiple, and the RC-IGBTs are arranged at intervals in the length direction, wherein the multiple RC-IGBTs include at least one high-voltage power side RC-IGBT and at least one low-voltage power side RC-IGBT, and the high-voltage power side RC-IGBT and the low-voltage power side RC-IGBT are arranged on different power side pads, respectively.

[0033] The above technical solution has the following advantages and beneficial effects: by arranging the at least one high-voltage power side RC-IGBT and the at least one low-voltage power side RC-IGBT on different power side pads, the different types of RC-IGBTs can be better electrically isolated, the connection of the required connection structure can be realized through the pins and the connecting lines, and the normal work of the power module is facilitated.

[0034] Exemplarily, the number of low-voltage power side RC-IGBTs is three, the number of high-voltage power side RC-IGBTs is three, and the power side pads include:

[0035] The number of low-voltage power side pads is three, and the three low-voltage power side pads are arranged at intervals in the length direction;

[0036] The number of high-voltage power side pads is one, and the one high-voltage power side pad is arranged at intervals with the three low-voltage power side pads in the length direction, the two sides of the packaging resin in the length direction are set as a first side and a second side, respectively, the low-voltage power side pads are closer to the first side in the length direction, the high-voltage power side pad is closer to the second side in the length direction, the three low-voltage power side RC-IGBTs are arranged one by one on the three low-voltage power side pads, respectively, the three high-voltage power side RC-IGBTs are arranged on the one high-voltage power side pad, and the three high-voltage power side RC-IGBTs are arranged at intervals in the length direction on the high-voltage power side pad.

[0037] The above technical solution has the following advantages and beneficial effects: by such an arrangement, the layout of the power module can be more reasonable, and the arrangement of the lead lines connected with the pads can be more simple and regular.

[0038] Exemplarily, the power module further includes:

[0039] The drive side frame is partially wrapped by the packaging resin, the drive side frame includes drive side pads and drive side pins, the drive integrated circuit is arranged on the drive side pads, and the drive integrated circuit is electrically connected with the drive side pins, wherein the heat dissipation substrate and the drive side frame are arranged at intervals in the width direction; or

[0040] A PCB board is wrapped by the encapsulation resin, and the PCB board has driving side pads, the power module further comprises driving side pins electrically connected with the PCB board, the driving integrated circuit is arranged on the driving side pads, and the driving integrated circuit is electrically connected with the driving side pins, wherein the heat dissipation substrate and the PCB board are arranged at intervals in the width direction.

[0041] The technical scheme has the following advantages and beneficial effects: the driving integrated circuit is arranged by using the driving side frame and the driving side pins are integrated, which can facilitate high integration, reduce the number of components, reduce the overall size, make the power module structure more compact, enhance heat dissipation, and improve the stability and reliability of the power module; the PCB board can realize wiring and support for the driving integrated circuit, and the PCB board structure is simple and friendly to encapsulation.

[0042] Exemplarily, the driving side pads comprise:

[0043] The low-voltage driving side pad is one;

[0044] The high-voltage driving side pad is one, one high-voltage driving side pad and one low-voltage driving side pad are arranged at intervals in the length direction, the two sides of the encapsulation resin in the length direction are set as a first side and a second side, the low-voltage driving side pad is closer to the first side in the length direction, the high-voltage driving side pad is closer to the second side in the length direction, the driving integrated circuit comprises a low-voltage driving integrated circuit and a high-voltage driving integrated circuit, one low-voltage driving integrated circuit is arranged on one low-voltage driving side pad, and one high-voltage driving integrated circuit is arranged on one high-voltage driving side pad, wherein

[0045] When the number of RC-IGBTs is multiple, and the multiple RC-IGBTs comprise multiple low-voltage power side RC-IGBTs and multiple high-voltage power side RC-IGBTs, one low-voltage driving integrated circuit is electrically connected with the multiple low-voltage power side RC-IGBTs respectively, and one high-voltage driving integrated circuit is electrically connected with the multiple high-voltage power side RC-IGBTs respectively.

[0046] The technical scheme has the following advantages and beneficial effects: in this way, the layout of the power module can be more reasonable, and the distribution of lead lines between the driving integrated circuit and the RC-IGBT can be more balanced.

[0047] Exemplarily, a bootstrap chip is further included, and the bootstrap chip is arranged on the driving side pins, wherein the driving side pins further comprise:

[0048] The floating power supply voltage pin is arranged on the side of the high-voltage drive side pad away from the heat dissipation substrate in the width direction, and has a bootstrap chip pad on the floating power supply voltage pin.

[0049] The floating power supply ground pin is arranged on the side of the high-voltage drive side pad away from the heat dissipation substrate in the width direction, and is arranged apart from the floating power supply voltage pin in the length direction.

[0050] The chip power supply voltage pin is arranged apart in the width direction between the high-voltage drive side pad and the floating power supply voltage pin, and the bootstrap chip is electrically connected to the chip power supply voltage pin.

[0051] The above technical solution has the following advantages and beneficial effects: the bootstrap chip can achieve power isolation, improve the driving voltage, and realize automatic gain control, and by arranging the bootstrap chip on the drive side pin, the circuit layout and wiring can be optimized, which is beneficial to the miniaturization of the power module.

[0052] Exemplarily, the bootstrap chip is integrated in the high-voltage drive integrated circuit, and the drive side pin further includes:

[0053] The floating power supply voltage pin is arranged on the side of the high-voltage drive side pad away from the heat dissipation substrate in the width direction.

[0054] The floating power supply ground pin is arranged on the side of the high-voltage drive side pad away from the heat dissipation substrate in the width direction, and is arranged apart from the floating power supply voltage pin in the length direction.

[0055] The chip power supply voltage pin is electrically connected to the high-voltage drive integrated circuit, and the floating power supply voltage pin and the floating power supply ground pin are both electrically connected to the high-voltage drive integrated circuit.

[0056] The above technical solution has the following advantages and beneficial effects: by integrating the bootstrap chip in the high-voltage drive integrated circuit, the circuit design can be simplified, the number of components and connections can be reduced, the space can be saved, the complexity and failure rate of the power module can be reduced, and the miniaturization of the power module is facilitated.

[0057] Exemplarily, the bootstrap chip is integrated in the high-voltage drive integrated circuit, and the drive side pin further includes:

[0058] The power side pin is wrapped by the packaging resin and located on the side of the heat dissipation substrate away from the drive integrated circuit in the width direction, and the power side pin is electrically connected to the RC-IGBT.

[0059] Each RC-IGBT comprises:

[0060] a gate pad, the gate pad being electrically connected with the driving integrated circuit,

[0061] an emitter pad, the emitter pad being provided with a pin electrical connection spot, a pin electrical connection line being connected between the pin electrical connection spot and the power side pin, the pin electrical connection spot being arranged to extend in the width direction, a plurality of pin electrical connection spots being arranged on each RC-IGBT, the plurality of pin electrical connection spots on each RC-IGBT being arranged to be spaced apart in the width direction, a plurality of pin electrical connection lines being arranged between each RC-IGBT and the corresponding power side pin, the plurality of pin electrical connection lines on each RC-IGBT being connected with the plurality of pin electrical connection spots one by one.

[0062] The above technical solution has the following advantages and beneficial effects: through such a setting, the electrical connection between the RC-IGBT and the corresponding pin can be achieved, and by making the RC-IGBT form a suitable circuit structure, the normal function of the power module can be achieved.

[0063] Illustratively, the two sides of the packaging resin along the length direction are set as a first side and a second side respectively, the pin electrical connection line is inclined to extend on the side closer to the first side in the width direction relative to the pin electrical connection spot, an included angle a is formed between the pin electrical connection line and the pin electrical connection spot, and a satisfies the relationship: 120°≤a≤178°.

[0064] The above technical solution has the following advantages and beneficial effects: by making the included angle a satisfy the above relationship, the wire bonding of the pin electrical connection line can be more convenient, and the insulation distance between the plurality of pin electrical connection lines can also be ensured, avoiding the short circuit of the pin electrical connection line due to the too close distance and causing damage to the device.

[0065] Illustratively, the length of the pin electrical connection line is L5, and L5 satisfies the relationship: 5mm≤L5≤9mm.

[0066] The above technical solution has the following advantages and beneficial effects: through such a setting, the length of the pin electrical connection line can be ensured to satisfy the normal electrical connection between the emitter of the RC-IGBT and the power side pin, while the problems of material waste, resistance increase and inductance increase caused by the too long length of the pin electrical connection line can also be inhibited, thereby reducing the power consumption of the power module and improving the stability of the power module.

[0067] Illustratively, the RC-IGBT comprises a terminal structure, and the terminal structure adopts a transverse variable doping structure.

[0068] The technical scheme has the following advantages and beneficial effects: the terminal structure of the RC-IGBT adopts a lateral variable-doping structure, compared with a field-limiting ring or a field-limiting ring plus a field plate terminal structure, the chip area of the RC-IGBT can be further reduced, thereby facilitating the miniaturization of the module.

[0069] Exemplarily, the aspect ratio of the RC-IGBT is less than or equal to 1.498.

[0070] The technical scheme has the following advantages and beneficial effects: by reducing the aspect ratio of the RC-IGBT, while realizing the miniaturization of the power module, the problems of stress concentration and uneven high-temperature thermal expansion of the RC-IGBT of a large-current specification (26A≤I≤35A) are improved, the failure probability of the RC-IGBT chip is significantly reduced, and the reliability of the power module is improved.

[0071] Another aspect of the present application provides an electronic device comprising the aforementioned power module.

[0072] The technical scheme has the following advantages and beneficial effects: since the electronic device comprises the aforementioned power module, the electronic device has substantially the same advantages as the aforementioned power module. BRIEF DESCRIPTION OF DRAWINGS

[0073] The following drawings of the present application are hereby incorporated into the present application as part of the present application for understanding the present application. The drawings of the embodiments of the present application and the description thereof are used to explain the devices and principles of the present application.

[0074] Figure 1 A top view of the power module in an embodiment of the present application is shown.

[0075] Figure 2 A top view of the power module in an embodiment of the present application is shown.

[0076] Figure 3 A top view of the power module in an embodiment of the present application is shown.

[0077] Figure 4A A cross-sectional view of the power module in one example obtained along the cross-sectional line AA is shown. Figure 3 A cross-sectional view of the power module in another example obtained along the cross-sectional line AA is shown.

[0078] Figure 4B A cross-sectional view of the power module in another example obtained along the cross-sectional line AA is shown. Figure 3 A cross-sectional view of the power module in another example obtained along the cross-sectional line AA is shown.

[0079] Reference signs:

[0080] 100, power module;

[0081] 10, packaging resin; 11, first side; 12, second side;

[0082] 20, drive side frame; 21, drive side pad; 22, high voltage drive side pad; 221, high voltage drive IC; 23, low voltage drive side pad; 231, low voltage drive IC;

[0083] 24, drive side pin; 241, floating supply voltage pin; 242, floating supply ground pin; 243, chip supply voltage pin; 25, bootstrap chip pad; 251, bootstrap chip;

[0084] 30, heat sink substrate; 31, power side pad; 32, high voltage power side pad; 321, high voltage power side RC-IGBT; 33, low voltage power side pad; 331, low voltage power side RC-IGBT; 34, power side pin; 35, gate pad; 36, emitter pad; 361, pin electrical connection spot; 262, pin electrical connection line.

[0085] 301, first conductive layer; 302, second conductive layer; 303, insulating layer; 3001, first surface; 3002, second surface; 3031, first surface; 3032, second surface. DETAILED DESCRIPTION

[0086] In the following description, numerous specific details are set forth to provide a more thorough understanding of the present application. However, it will be apparent to one of skill in the art upon

[0087] It will be understood that the application can be put into effect in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that the disclosure will be thorough and complete and will fully convey the scope of the application to those skilled in the art. In the drawings, the size and relative sizes of layers and regions can be exaggerated for clarity. Like reference numerals can be used to denote like elements throughout.

[0088] It will be understood that, although the terms first, second, third, etc. can be used herein to describe various elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present application.

[0089] Spatially relative terms, such as "beneath", "below", "lower", "under", "above", "upper" and the like, can be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use and / or operation in addition to the orientations depicted in the figures. For example, if a device described is turned over in use, a downward

[0090] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the present application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and / or "comprising", when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. As used herein the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0091] Embodiments of the application are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments (and intermediate structures) of the application. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and / or tolerances, are to be expected. Thus, embodiments of the application should not be construed as limited to the particular shapes of the regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. The regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a device and are not intended to limit the scope of the application.

[0092] In order to make the application thoroughly understood, specific embodiments and structures will be given in the following description, in order to explain the technical solutions provided by the application. The preferred embodiments of the application are described in detail as follows, however, the application can have other implementation manners besides these detailed descriptions.

[0093] In the following, the application will be described with reference to the drawings. Figures 1 to 4B A power module in an embodiment of the application is described, wherein, in order to more clearly mark the size, Figure 2 The reference numerals of a plurality of structures are omitted in the figures, which can be referred to Figure 1 obtained, and it is worth mentioning that, without conflict, each technical feature in the embodiments of the application can be combined with each other.

[0094] To solve the above problems in the foregoing background art, as shown in Figure 1 and Figure 2 An embodiment of the application provides a power module 100, comprising an RC-IGBT, a driving integrated circuit, a heat dissipation substrate 30, a packaging resin 10 and the like.

[0095] A reverse conducting IGBT (RC-IGBT) can be a semiconductor switching element substantially in a rectangular shape, including an IGBT (Insulated Gate Bipolar Transistor) and a freewheeling diode arranged on one semiconductor substrate. Since the IGBT chip and the freewheeling diode arranged on different semiconductor substrates each include a termination region and an active region, the termination regions can be shared when the two devices are combined into one chip, so that the area of the termination region can be reduced. Therefore, the size of the RC-IGBT is generally smaller than that of a structure in which an IGBT and a freewheeling diode are arranged on different semiconductor substrates. Therefore, in the case of using an RC-IGBT as a power chip of a power module, the size of the power chip and even the size of the power module can be reduced. The reverse conducting IGBT is a single type power chip, so that the number of dies of the power module 100 can be reduced, and the number of bonding wires can be reduced.

[0096] In some embodiments, the RC-IGBT includes a termination structure, which can adopt a lateral variable doping structure. The above technical solution has the following advantages and beneficial effects: the termination structure of the RC-IGBT adopts a lateral variable doping structure, which can further reduce the chip area of the RC-IGBT compared to a field limiting ring or a field limiting ring plus field plate termination structure, thereby facilitating the miniaturization of the module.

[0097] Lateral variable doping refers to forming a region with a gradually changing impurity doping concentration in the termination region of the device by, for example, ion implantation. Typically, the substrate region near the heavily doped main junction is ion implanted to form a lateral variable doping structure. The closer to the main junction, the higher the doping concentration, and the farther away, the lower the doping concentration.

[0098] In some embodiments, the number of RC-IGBTs is multiple, for example, including three high-voltage power side RC-IGBTs and three low-voltage power side RC-IGBTs that constitute an inverter. Specifically, the number of RC-IGBTs can be reasonably set according to actual needs.

[0099] In some embodiments, the rated current of the RC-IGBT is defined as I, and I satisfies the relationship: 26A≤I≤35A. In the embodiments of the present application, in order to realize a larger current specification in a smaller packaging resin, for example, to realize packaging for 26A≤I≤35A, the related sizes of the packaging resin and the RC-IGBT are optimized, which will be described below.

[0100] The drive integrated circuits are electrically connected to the RC-IGBTs for controlling the RC-IGBTs, for example, the drive integrated circuits are electrically connected to the RC-IGBTs via electrical connectors such as wires, and the drive integrated circuits control the RC-IGBTs, for example, drive the RC-IGBTs to turn on or turn off, and for example, protect the RC-IGBTs when an abnormality occurs (such as overvoltage protection and / or overtemperature protection and / or electrostatic protection, etc.).

[0101] The number of drive integrated circuits can be reasonably set according to the RC-IGBTs to be driven, for example, the number of drive integrated circuits can be one or more, when the number is more than one, it can include one high-voltage drive integrated circuit and one low-voltage drive integrated circuit, or include three high-voltage drive integrated circuits and one low-voltage drive integrated circuit, or other suitable cases. Among them, the high-voltage drive integrated circuit drives the turn-on or turn-off of the high-voltage power side RC-IGBT, and the low-voltage drive integrated circuit drives the turn-on or turn-off of the low-voltage power side RC-IGBT. Optionally, a plurality of electronic components such as transistors, diodes, triodes, resistors, or capacitors can be integrated in the drive integrated circuit.

[0102] The heat dissipation substrate 30 has a first surface and a second surface arranged oppositely, wherein the RC-IGBT is arranged on the first surface of the heat dissipation substrate 30, for example, the first surface side of the heat dissipation substrate 30 has a power side pad 31, and the RC-IGBT is arranged on the power side pad 31. The RC-IGBT can be supported by the heat dissipation substrate 30, and the heat dissipation substrate 30 has good thermal conductivity, which can improve the heat dissipation effect of the RC-IGBT and improve the reliability of the RC-IGBT. The power side pad 31 on the first surface side of the heat dissipation substrate can realize the lead-out of the RC-IGBT for electrical connection with other components, and the direct arrangement of the RC-IGBT on the power side pad 31 can realize the direct electrical connection of the RC-IGBT, which optimizes the wiring of the power module and makes the structure simpler. Optionally, the heat dissipation substrate can be a ceramic substrate with a conductive layer or other suitable type of substrate.

[0103] In some embodiments, the area of the heat dissipation substrate 30 is set as S, and S satisfies the relationship: 161.25mm2≤S≤275mm 2 By such arrangement, the packaging resin can meet the space requirement of the drive side frame or the drive side PCB (printed circuit board) for carrying the drive integrated circuit, and can also meet the space requirement of the heat dissipation substrate for heat dissipation of the power chip (such as IGBT and FRD, or RC-IGBT).

[0104] The encapsulation resin 10 encapsulates the RC-IGBT, the heat dissipation substrate 30, the driving integrated circuit and the like. The encapsulation resin is obtained by mold encapsulation, which can be generated by transfer molding using a thermosetting resin for example, and the encapsulation resin can be an epoxy resin or other resin material suitable for semiconductor module encapsulation. The opposite sides in the width direction of the encapsulation resin are the driving side and the power side respectively, and the at least partial heat dissipation substrate, the RC-IGBT and the driving integrated circuit are encapsulated in the encapsulation resin, so that the encapsulation resin can provide physical and electrical protection for the at least partial heat dissipation substrate, the RC-IGBT and the driving integrated circuit to prevent damage of the at least partial heat dissipation substrate, the RC-IGBT and the driving integrated circuit caused by external environmental impact, and ensure normal operation of the power module 100.

[0105] In the related art, the power module product for driving the motor with the current specification of 25A-35A power chip usually has a length of the encapsulation resin (sometimes also referred to as the plastic package) of about 38mm and a width of about 24mm, and the area of the heat dissipation substrate reaches about 420mm 2 The power chip usually adopts IGBT and fast recovery diode (FRD), and only the IGBT chip with large current specification can be encapsulated in a large package in the related art, which is obviously not conducive to the miniaturization of the product.

[0106] In the embodiments of the present application, in order to realize the encapsulation of the power chip with larger current specification in a smaller encapsulation resin, for example, to realize the encapsulation of the power chip with 26A≤I≤35A, the related dimensions of the encapsulation resin and the RC-IGBT are optimized, and in some embodiments of the present application, as shown in Figure 1 and Figure 2 , the width L1 of the encapsulation resin in the width direction (i.e. the width direction shown in Figure 2 ) is set, L1 is less than or equal to 20mm, and the length of the encapsulation resin of the power module in the length direction (i.e. the length direction shown in Figure 2 ) is set as L2, then L2 is less than or equal to 36.5mm, and by reducing the length and width of the encapsulation resin, the miniaturization of the product can be facilitated.

[0107] When 26A≤I≤35A, it belongs to a large current specification; the larger the chip current specification, the higher the chip temperature, and the greater the thermal stress on the corresponding chip; for a relatively small package, heat dissipation is usually limited, resulting in higher chip temperature and greater thermal stress, which in turn increases the probability of chip failure. Therefore, in some embodiments of the present application, the width L1 of the packaging resin in the width direction is also greater than or equal to 16 mm, i.e., 16 mm≤L1≤20 mm, and the length L2 of the packaging resin in the length direction is also greater than or equal to 31.5 mm, i.e., 31.5 mm≤L2≤36.5 mm. By keeping the size of the packaging resin within the above range, it is possible to facilitate product miniaturization while meeting the requirements of 26A≤I≤35A current specification as much as possible, to package larger current specifications in a relatively small packaging resin, to suppress the problem of higher chip temperature and greater thermal stress due to the small size of the packaging resin, and to further reduce the probability of chip failure.

[0108] When the rated current I of the RC-IGBT is less than 26A, the heat dissipation substrate and the package have a large heat dissipation margin for the RC-IGBT chip, and since the current specification is relatively small, the heat generated by the RC-IGBT chip during operation is low, and the temperature is also low, and the thermal stress on the chip is small, and there is almost no problem of failure of the RC-IGBT chip packaged in a relatively small package, so that the chip aspect ratio and the ceramic substrate material do not limit the power module, and have little effect on the reliability of the chip.

[0109] However, when 26A≤I≤35A, it belongs to a large current specification; the larger the chip current specification, the higher the chip temperature, and the greater the thermal stress on the corresponding chip; and when in the above small package (e.g., L2≤36.5 mm, L1≤20 mm), the chip heat dissipation is limited, resulting in higher chip temperature and greater thermal stress; especially when the ratio of the length L3 of the RC-IGBT chip to the width L4 of the RC-IGBT chip (i.e., the aspect ratio) is too large, the stress concentration on the large aspect ratio chip increases sharply, the thermal expansion inhomogeneity increases sharply under high temperature, and the stress difference between different regions increases sharply, thereby, under the combined action of the three factors of large current specification, large aspect ratio of RC-IGBT, and small package, the probability of chip failure increases sharply.

[0110] Therefore, in the embodiments of the present application, the aspect ratio of the RC-IGBT is less than or equal to 1.61, for example, 1.61, 1.5, 1.45, 1.4, 1.35, 1.3, or 1.2, etc. By such a setting, the aspect ratio of the chip under the large current specification (26A≤I≤35A) is reduced, so that under the above small package (for example, L2≤36.5mm, L1≤20mm), the problem of unevenness of high-temperature thermal expansion and stress concentration of the chip under the large current specification can be reduced, the failure probability of the chip under the large current specification is greatly reduced, thereby facilitating to provide a semiconductor device (for example, a power module) with small size, large current specification and high reliability. In some examples, the aspect ratio of the RC-IGBT can be further less than or equal to 1.498, and in other examples, it can be less than or equal to 1.4, so as to reduce the stress of the chip under the large current specification and make the stress increase more gently, thereby effectively solving the problem of unevenness of high-temperature thermal expansion and greatly reducing the failure probability of the chip under the large current specification.

[0111] Further, when the area S of the heat dissipation substrate is in the range of 161.25mm 2 -275mm 2 , although the chip heat dissipation is further limited, by making the aspect ratio of the RC-IGBT less than or equal to 1.61, thereby reducing the aspect ratio of the chip under the large current specification (26A≤I≤35A), so that under the above small package and small heat dissipation substrate (for example, L2≤36.5mm, L1≤20mm, 161.25mm 2 ≤area S of the heat dissipation substrate≤275mm 2 ), the stress concentration of the chip under the large current specification can be reduced, and the problem of unevenness of high-temperature thermal expansion can be effectively solved, the failure probability of the chip under the large current specification is greatly reduced, thereby facilitating to provide a semiconductor device (for example, a power module) with small size, large current specification and high reliability.

[0112] If the aspect ratio is too small, for example, less than or equal to 1.18, it means that the width of the RC-IGBT chip increases (i.e., the lateral dimension increases). According to the current circuit pattern design on the heat dissipation substrate, the lateral dimension of the power side pad 31 for connecting with the RC-IGBT is much smaller than the longitudinal dimension. Correspondingly, the variable lateral dimension of the RC-IGBT is much smaller than the variable longitudinal dimension of the chip. Therefore, the larger width of the RC-IGBT is not conducive to the miniaturization of the semiconductor device. Therefore, in some embodiments, the aspect ratio of the RC-IGBT is greater than 1.18, i.e., the longitudinal dimension is relatively large, which can be more conducive to the miniaturization of the semiconductor device. In some embodiments, the aspect ratio of the RC-IGBT is less than or equal to 1.59 and greater than or equal to 1.45, or other suitable ranges, which are not limited here.

[0113] It is worth mentioning that, in the embodiments of the present application, the aspect ratio of the RC-IGBT, i.e. the ratio of the length L3 and the width L4 of the RC-IGBT, is generally greater than the width L4. Wherein, the width direction of the packaging resin is generally parallel to the length direction of the RC-IGBT, so the length L3 of the length direction of the RC-IGBT is the size of the RC-IGBT in the width direction of the packaging resin, and the length direction of the packaging resin is generally parallel to the width direction of the RC-IGBT, so the width L4 of the width direction of the RC-IGBT is the size of the RC-IGBT in the length direction of the packaging resin.

[0114] If the width of the RC-IGBT is too small, the aspect ratio of the RC-IGBT may be increased, as mentioned above, a large aspect ratio is prone to increase the failure probability of the RC-IGBT, and too large width is also prone to increase the overall size of the power module, therefore, in some embodiments, the width L4 of the RC-IGBT is greater than or equal to 2.0 mm and less than or equal to 3.4 mm, so that the value of the aspect ratio of the RC-IGBT is not too large, thereby reducing the chip failure probability and not increasing the overall size of the product.

[0115] Further, in order to improve the heat dissipation effect of the power module, at least part of the second surface of the heat dissipation substrate 30 (which can also be referred to as the bottom surface of the heat dissipation substrate) is exposed from the packaging resin, for example, the bottom surface of the heat dissipation substrate 30 is exposed from the packaging resin, and other surfaces are covered by the packaging resin. Through such a setting, the heat dissipation performance of the heat dissipation substrate to the outside of the power module can be improved, thereby improving the stability and reliability of the power module. In one example, the second surface of the heat dissipation substrate can also be flush with the bottom surface of the packaging resin.

[0116] Figure 3 A top view of the power module is shown, which is compared with Figure 1 and Figure 2 which does not present some details inside the packaging resin. Among them, Figure 4A and Figure 4B are cross-sectional schematic diagrams of the power module obtained along the AA section line in Figure 3 In some embodiments, as shown in Figure 4A and Figure 4B , the heat dissipation substrate 30 has oppositely arranged first surface 3001 and second surface 3002, wherein the RC-IGBT is arranged on the first surface 3001 of the heat dissipation substrate 30. In some examples, as shown in Figure 4A and Figure 4BAs shown, the heat dissipation substrate 30 includes an insulating layer 303 having a first surface 3031 and a second surface 3032 opposite to the first surface 3031, and a conductive layer disposed at least on the first surface 3031 of the insulating layer 303. The insulating layer 303 can be a ceramic layer, which can be a ceramic material having a higher thermal conductivity than Al2O3, for example, at least one of an aluminum nitride ceramic layer or a silicon nitride ceramic layer. By using a ceramic material having a higher thermal conductivity than Al2O3, the heat dissipation property of the heat dissipation substrate can be improved, so that the heat generated by the RC-IGBT, the conductive layer, etc. can be dissipated, which is conducive to reducing the temperature of the power module 100, thereby inhibiting the accumulation of heat when the power module 100 is running, and ensuring safety. In addition, the insulating layer can also have an insulating effect, which can prevent the conductive layer electrically connected to the RC-IGBT from being electrically connected to the outside, thereby ensuring the normal operation of the power module 100, and improving the electrical safety of the power module 100.

[0117] In some embodiments, as shown, Figure 4A The conductive layer of the heat dissipation substrate 30 can include a first conductive layer 301 disposed on the first surface 3031 of the insulating layer 303, that is, the surface of the first conductive layer 301 away from the insulating layer 303 constitutes at least part of the first surface 3001 of the heat dissipation substrate 30, and the second surface 3032 of the insulating layer 303 constitutes the second surface 3002 of the heat dissipation substrate 30, so that at least part of the second surface 3032 of the insulating layer 303 is exposed in the encapsulating resin 10.

[0118] In other embodiments, the conductive layer of the heat dissipation substrate 30 can be at least two layers, for example, the conductive layer includes a first conductive layer 301 and a second conductive layer 302, the first conductive layer 301 is disposed on the first surface 3031 of the insulating layer 303, and the second conductive layer is disposed on the second surface 3032 of the insulating layer 303. The surface of the first conductive layer 301 away from the insulating layer 303 constitutes at least part of the first surface 3001 of the heat dissipation substrate 30, and the surface of the second conductive layer 302 away from the insulating layer 303 constitutes at least part of the second surface 3002 of the heat dissipation substrate 30, so that at least part of the surface of the second conductive layer 302 is exposed in the encapsulating resin 10.

[0119] Optionally, the material of the conductive layer can be a metal material, for example, one or more of copper, aluminum, silver, gold, tin, etc., for example, the material of the conductive layer includes copper.

[0120] In some embodiments, the first conductive layer 301, for example, a copper layer, can be etched with a pattern, which can correspond to the power side pads 31 corresponding to one or more RC-IGBTs, and the first conductive layer includes the power side pads 31, and there is a gap between adjacent power side pads 31, which exposes the exposed portion of the insulating layer 303, and the copper layer can carry the RC-IGBT and play a conductive role. For the heat dissipation substrate 30 with the second conductive layer 302, the second conductive layer 302 can be patternless, which is exposed from the bottom surface of the plastic package, and by taking advantage of the good thermal conductivity of the second conductive layer 302, the heat dissipation performance of the heat dissipation substrate 30 is further improved, so as to ensure the normal operation of the power module 100 and improve the electrical safety of the power module 100.

[0121] The heat dissipation substrate 30 can be made by any suitable process, for example, active metal bonding (AMB) technology, which uses active metal solder containing a small amount of active metal elements (Ti, Zr, Hf, V, Nb or Ta) to realize the welding between the metal, for example, copper foil, and the ceramic substrate (i.e. the insulating layer). The above-mentioned metal elements have high activity and can improve the wettability of the solder to the ceramic after melting, so that the ceramic surface can be welded with the metal without metallization. The general process of the technology is as follows: first, the ceramic substrate is coated with a brazing material, then brazing sintering is performed under vacuum and high temperature, the copper layer is welded with the ceramic substrate, then photoetching and copper etching of the circuit pattern are performed, and finally the active metal solder layer is etched. The copper / ceramic interface formed by the AMB process has better bonding strength. When the insulating layer in the embodiments of the present application is an aluminum nitride ceramic layer or a silicon nitride ceramic layer, the heat dissipation substrate 30 can be made by the active metal brazing technology. In some other embodiments, the first conductive layer can also be at least a part of a metal frame, which can be arranged on the insulating layer by, for example, welding or bonding.

[0122] In some embodiments, the number of RC-IGBTs is multiple, the number of power side pads 31 of the heat dissipation substrate is multiple, and the multiple RC-IGBTs are arranged in the length direction of the packaging resin 10, and can also be arranged staggered in the width direction of the packaging resin, that is, the multiple RC-IGBTs are not aligned in the width direction of the packaging resin, or can also be aligned in the width direction. The specific arrangement can be reasonably set according to the actual layout requirements of the power module.

[0123] In some embodiments, the plurality of RC-IGBTs includes at least one high-voltage power-side RC-IGBT 321 and at least one low-voltage power-side RC-IGBT 331, and the high-voltage power-side RC-IGBT 321 and the low-voltage power-side RC-IGBT 331 are arranged on different power-side pads 31, respectively. By arranging the at least one high-voltage power-side RC-IGBT 321 and the at least one low-voltage power-side RC-IGBT 331 on different power-side pads 31, different types of RC-IGBTs can be better electrically isolated, and the connection of the required connection structure can be realized through pins and connecting wires, which is conducive to the normal operation of the power module.

[0124] Optionally, the plurality of RC-IGBTs can be arranged according to actual needs. In the embodiments of the present application, some details of the power module are described mainly by taking the case where the number of low-voltage power-side RC-IGBTs is three and the number of high-voltage power-side RC-IGBTs is three as an example, but this is not intended to constitute a limitation. In some possible embodiments, there can be other different numbers of high-voltage power-side RC-IGBTs or low-voltage power-side RC-IGBTs.

[0125] In some embodiments, the power-side pads 31 of the heat dissipation substrate 30 include low-voltage power-side pads 33 and high-voltage power-side pads 32, wherein the low-voltage power-side pads 33 are three, the three low-voltage power-side pads 33 are arranged at intervals in the length direction of the packaging resin, the high-voltage power-side pads 32 are one, and the one high-voltage power-side pad 32 is arranged at an interval in the length direction of the packaging resin from the three low-voltage power-side pads 33. The two sides of the packaging resin along the length direction are set as a first side 11 and a second side 12, respectively, the low-voltage power-side pads 33 are more adjacent to the first side 11 in the length direction of the packaging resin, and the high-voltage power-side pads 32 are more adjacent to the second side 12 in the length direction of the packaging resin. By such an arrangement, the layout of the power module can be more reasonable, and the arrangement of the lead wires connected to the pads can be more simple and regular.

[0126] Optionally, the three low-voltage power-side RC-IGBT 331 are arranged one-to-one on the three low-voltage power-side pads 33, respectively, and the three high-voltage power-side RC-IGBT 321 are arranged on the one high-voltage power-side pad 32, and the three high-voltage power-side RC-IGBT are arranged at intervals in the length direction of the packaging resin on the high-voltage power-side pad 32. By arranging the three high-voltage power-side RC-IGBT corresponding to one high-voltage power-side pad 32, the number of pins and wires can be reduced, the layout structure of the power module can be simplified, and the structure can be more compact, which is conducive to the miniaturization of the power module.

[0127] In some embodiments, each low-voltage power side pad 33 has an edge arranged to extend in the length direction of the encapsulation resin near the drive side frame side, and the size of the edge in the length direction of the encapsulation resin is set as L6, and the range of L6 is between 2.4 mm and 4.4 mm. The high-voltage power side pad 32 has a first edge extending in the width direction of the encapsulation resin, and the first edge is away from the second side 12 of the encapsulation resin, and the size of the first edge in the width direction of the encapsulation resin is set as L7, and the range of L7 is between 3.7 mm and 5.7 mm.

[0128] In other embodiments, each high-voltage power side RC-IGBT 321 can correspond to one high-voltage power side pad 32, or two high-voltage power side RC-IGBTs can correspond to one high-voltage power side pad. Or, in other embodiments, at least two low-voltage power side RC-IGBTs can correspond to one low-voltage power side pad. Specifically, it can be reasonably set according to actual needs.

[0129] More specifically, in some embodiments, the power module 100 further comprises power side pins 34, part of the power side pins 34 are wrapped by the encapsulation resin and located on the side of the heat dissipation substrate 30 away from the drive integrated circuit 20 in the width direction of the encapsulation resin, and the power side pins 34 are electrically connected with the RC-IGBTs, and the external circuit of the RC-IGBT can be electrically connected through the power side pins.

[0130] In some embodiments, each RC-IGBT comprises a gate pad 35 and an emitter pad 36, the gate pad 35 is electrically connected with the drive integrated circuit, the emitter pad 36 is provided with a pin electrical connection spot 361, a pin electrical connection line 262 is connected between the pin electrical connection spot 361 and the power side pin 34, the pin electrical connection spot 361 is arranged to extend in the width direction of the encapsulation resin, a plurality of pin electrical connection spots 361 are provided on each RC-IGBT, the plurality of pin electrical connection spots 361 on each RC-IGBT are arranged to be spaced apart in the width direction of the encapsulation resin, a plurality of pin electrical connection lines 262 are provided between each RC-IGBT and the corresponding power side pin 34, and the plurality of pin electrical connection lines 262 of each RC-IGBT are connected with the plurality of pin electrical connection spots 361 one by one. Through such a setting, the electrical connection between the RC-IGBT and the corresponding pin can be realized, and by making the RC-IGBT form a suitable circuit structure, the normal function of the power module can be realized.

[0131] The end of each power side pin 34 for electrical connection with the RC-IGBT is wrapped by the encapsulation resin, and the other end of the power side pin 34 extends out of the encapsulation resin to facilitate electrical connection with the external circuit.

[0132] In some embodiments, the two sides of the encapsulation resin along the length direction are set as the first side 11 and the second side 12 respectively, the pin electrical connection line 262 is inclined to extend towards the side of the first side 11 in the width direction of the encapsulation resin relative to the pin electrical connection pad 361, and an included angle a is formed between the pin electrical connection line 262 and the pin electrical connection pad 361, which satisfies the relationship: 120°≤a≤178°. By making the included angle a satisfy the above relationship, the wire bonding of the pin electrical connection line can be more convenient, and the insulation distance between the pin electrical connection lines can also be ensured to avoid short circuit of the pin electrical connection lines due to too close distance and damage of the device.

[0133] In some embodiments, the length of the pin electrical connection line 262 is set as L5, which satisfies the relationship: 5mm≤L5≤9mm. By such setting, the length of the pin electrical connection line 262 can be ensured to satisfy the normal electrical connection between the emitter and the power side pin 34 of the RC-IGBT, while the problems of material waste, resistance increase and inductance increase caused by too long length of the pin electrical connection line can be inhibited, thereby reducing the power module power consumption and improving the stability of the power module.

[0134] It is worth mentioning that in the embodiments of the present application, the number of the pin electrical connection lines 262 for realizing the connection of each RC-IGBT and the corresponding power side pin can be 1 or greater than or equal to 2, and the drawings of the present application mainly show the case of more than 2 pin electrical connection lines 262, but this is not intended to constitute a limitation.

[0135] Further, in some embodiments of the present application, a driving side frame 20 is further included, part of the driving side frame 20 is wrapped by the encapsulation resin, the driving side frame 20 includes a driving side pad 21 and a driving side pin 24, a driving integrated circuit is arranged on the driving side pad 21, and the driving integrated circuit is electrically connected with the driving side pin 24, wherein the heat dissipation substrate 30 and the driving side frame 20 are arranged in the width direction with a spacing. Optionally, part of the driving side pin 24 extends out of the encapsulation resin to facilitate electrical connection with an external circuit. By arranging the driving integrated circuit and integrating the driving side pin by using the driving side frame, high integration can be realized, the number of elements can be reduced, the overall size can be reduced, and the power module structure is more compact. The heat dissipation can be enhanced, and the stability and reliability of the power module can be improved.

[0136] In some embodiments, the driving side frame 20 can be replaced by a PCB board (i.e. printed circuit board) encapsulated by the encapsulation resin, the PCB board having driving side pads, the power module further comprising driving side pins (e.g. the driving side pins and the PCB board are two independent devices), the driving side pins being electrically connected with the PCB board (e.g. the driving side pins and the PCB board are electrically connected by soldering or other suitable manners), the driving integrated circuits being arranged on the driving side pads, the driving integrated circuits being electrically connected with the driving side pins, wherein the heat dissipation substrate 30 is arranged in the width direction of the encapsulation resin. The side of the PCB board for arranging the driving integrated circuits can have various wirings and pad areas for placing the driving integrated circuits, and the wirings can be used to achieve electrical connection between each pad area and the corresponding driving side pin or structure. Specifically, the structure of the PCB board can be reasonably selected according to actual needs, which is not specifically limited here. The PCB board can be used to realize the wiring and support of the driving integrated circuits, and the structure of the PCB board is simple and friendly to encapsulation. In some examples, the driving side pins and the corresponding driving side pads on the PCB board can be electrically connected by, for example, soldering, plug-in connection, bonding wire or spring connection, etc., which is not specifically limited here.

[0137] The PCB board can be a substrate for forming electrical connections between electronic components by patterning conductive copper foil on the surface of an insulating material (such as glass fiber, epoxy resin, etc.), and the PCB board realizes electrical connection between electronic components through these copper foil lines and supports the fixation of components on the board. Alternatively, the PCB board can be a single-sided board, a double-sided board or a multi-sided board, etc.

[0138] Some details of the driving side frame 20 will be described below taking the driving side frame 20 as an example.

[0139] In some embodiments, the drive-side pads 21 include one low-voltage drive-side pad 23 and one high-voltage drive-side pad 22, the one low-voltage drive-side pad 23 and the one high-voltage drive-side pad 22 are arranged in the length direction with a spacing, the length direction of the package resin is set as a first side 11 and a second side 12, the low-voltage drive-side pad 23 is closer to the first side 11 in the length direction, the high-voltage drive-side pad 22 is closer to the second side 12 in the length direction, the drive integrated circuit includes a low-voltage drive integrated circuit 231 and a high-voltage drive integrated circuit 221, one low-voltage drive integrated circuit 231 is arranged on one low-voltage drive-side pad 23, and one high-voltage drive integrated circuit 221 is arranged on one high-voltage drive-side pad 22, wherein, when the number of RC-IGBTs is a plurality, and the plurality of RC-IGBTs include a plurality of low-voltage power-side RC-IGBTs and a plurality of high-voltage power-side RC-IGBTs, one low-voltage drive integrated circuit 231 is electrically connected to the plurality of low-voltage power-side RC-IGBTs 331 respectively (for example, one low-voltage drive integrated circuit 231 is electrically connected to three low-voltage power-side RC-IGBTs 331), and one high-voltage drive integrated circuit 221 is electrically connected to the plurality of high-voltage power-side RC-IGBTs 321 respectively (for example, one high-voltage drive integrated circuit 221 is electrically connected to three high-voltage power-side RC-IGBTs 331). In this way, the layout of the power module can be more reasonable, and the distribution of leads between the drive integrated circuit and the RC-IGBT can be more balanced.

[0140] Further, in some embodiments, the power module further includes a bootstrap chip 251 arranged on the drive-side pin 24, wherein the drive-side pin 24 further includes a floating supply voltage pin 241 arranged on the side of the high-voltage drive-side pad 22 away from the heat dissipation substrate 30 in the width direction, the floating supply voltage pin 241 has a bootstrap chip pad 25, and the bootstrap chip 251 is arranged on the bootstrap chip pad 25. Optionally, three high-voltage power sides can correspond to three bootstrap chips (for example, a circuit including a bootstrap diode), the bootstrap chip can play a role of power supply isolation, improve the driving voltage, and realize automatic gain control, and by arranging the bootstrap chip on the drive-side pin, the circuit layout and wiring can be optimized, which is beneficial to the miniaturization of the power module.

[0141] In some embodiments, the drive-side pin 24 further includes a floating supply ground pin 242 arranged on the side of the high-voltage drive-side pad 22 away from the heat dissipation substrate 30 in the width direction, and the floating supply ground pin 242 is arranged in the length direction with a spacing from the floating supply voltage pin 241.

[0142] In some embodiments, the drive side pin 24 further comprises a chip supply voltage pin 243, which is arranged in length direction and in width direction between the high-voltage drive side pad 22 and the floating supply voltage pin 241, the bootstrap chip 251 is electrically connected with the chip supply voltage pin 243, and the floating supply voltage pin 241 and the floating supply ground pin 242 are both electrically connected with the high-voltage drive integrated circuit 221.

[0143] In other embodiments, the bootstrap chip can also be integrated in the high-voltage drive integrated circuit, and in this case, the drive side pin 24 is implemented as a structure and electrical connection relationship as follows: the drive side pin 24 comprises a floating supply voltage pin 241, a floating supply ground pin 242, and a chip supply voltage pin 243, the floating supply voltage pin 241 is arranged in width direction away from the heat dissipation substrate 30 on one side of the high-voltage drive side pad 22; the floating supply ground pin 242 is arranged in width direction away from the heat dissipation substrate 30 on one side of the high-voltage drive side pad 22, and the floating supply ground pin 242 is arranged in length direction away from the floating supply voltage pin 241; the chip supply voltage pin 243 is arranged in length direction and in width direction between the high-voltage drive side pad 22 and the floating supply voltage pin 241, the high-voltage drive integrated circuit 221 is electrically connected with the chip supply voltage pin 243, and the floating supply voltage pin 241 and the floating supply ground pin 242 are both electrically connected with the high-voltage drive integrated circuit 221. By integrating the bootstrap chip in the high-voltage drive integrated circuit, the circuit design can be simplified, the number of components and connections can be reduced, the space can be saved, and the complexity and failure rate of the power module can be reduced, which is conducive to the miniaturization of the power module. It is worth mentioning that, in other embodiments, in order to reduce the space occupied by the drive side pin, the chip supply voltage pin 243 can also not cross other pins in length direction.

[0144] So far, the power module in the embodiments of the present application has been introduced, but it is conceivable that other suitable components can also be provided in addition to the above-mentioned structure, which is not limited in detail.

[0145] In summary, according to the power module in the embodiments of the present application, by using RC-IGBT as a semiconductor switching element, and by packaging a large-current specification (26A≤I≤35A) RC-IGBT in a small packaging resin, and by reducing the aspect ratio of the RC-IGBT, the stress concentration and uneven high-temperature thermal expansion of the large-current specification (26A≤I≤35A) RC-IGBT are improved while the power module is miniaturized, the RC-IGBT chip failure probability is significantly reduced, and thus the reliability of the power module is improved.

[0146] Another aspect of the present application provides an electronic device comprising the aforementioned power module. The electronic device may include a household appliance, such as an electric fan, air conditioner, kitchen hood, high-speed hair dryer, washing machine, etc., and the power module may be used in the motor drive system of the household appliance. The electronic device may also include new energy vehicles, industrial automation equipment, switching power supplies, etc.

[0147] Since the electronic device of the present application has the aforementioned power module, it also has the advantages of the aforementioned power module.

[0148] Although example embodiments have been described herein with reference to the accompanying drawings, it should be understood that the above example embodiments are merely illustrative and are not intended to limit the scope of the present application. Various changes and modifications may be made therein by those skilled in the art without departing from the scope and spirit of the present application. All such changes and modifications are intended to be included within the scope of the present application as required by the appended claims.

[0149] In the description provided herein, a large number of specific details are described. However, it is understood that the embodiments of the present application can be practiced without these specific details. In some instances, well-known methods, structures, and techniques are not shown in detail so as not to obscure the understanding of this description.

[0150] Similarly, it should be understood that in order to streamline the present application and aid in understanding one or more of the various inventive aspects, in the description of the exemplary embodiments of the present application, the various features of the present application are sometimes grouped together into a single embodiment, figure, or description thereof. However, this approach of the present application should not be interpreted as reflecting the intention that the application claimed for protection requires more features than those explicitly recited in each claim. More precisely, as reflected in the corresponding claims, the inventive point is that the corresponding technical problem can be solved with fewer features than all the features of a single disclosed embodiment. Therefore, the claims following the detailed description are hereby expressly incorporated into the detailed description, with each claim itself serving as a separate embodiment of the present application.

[0151] Those skilled in the art will understand that, except where mutually exclusive, all features disclosed in this specification (including the accompanying claims, abstract, and drawings) and all processes or units of any method or apparatus disclosed herein may be combined in any combination. Unless expressly stated otherwise, each feature disclosed in this specification (including the accompanying claims, abstract, and drawings) may be replaced by an alternative feature that provides the same, equivalent, or similar purpose.

[0152] Furthermore, those skilled in the art will recognize that, in the practice of the embodiments disclosed herein, functional practices described herein can be implemented in varying sequences, and that alternative embodiments can be constructed without departing from the scope of the present application. For example, in the claims, any of the claimed embodiments can be used in any combination.

[0153] It is to be understood that the above-referenced examples do not limit the present application and that many alternatives can be implemented without departing from the scope of the present application. Accordingly, the application is not to be restricted, except as by the appended claims.

Claims

1. A power module (100) comprising: an RC-IGBT; a drive integrated circuit electrically connected with the RC-IGBT; a heat dissipation substrate (30) having a first surface and a second surface oppositely arranged, wherein the RC-IGBT is arranged on the first surface of the heat dissipation substrate (30); a packaging resin (10) encapsulating the RC-IGBT, the heat dissipation substrate (30) and the drive integrated circuit, at least part of the second surface of the heat dissipation substrate (30) being exposed from the packaging resin (10), wherein an aspect ratio of the RC-IGBT is less than or equal to 1.61; a length of the packaging resin (10) in a length direction is less than or equal to 36.5 mm; a width of the packaging resin (10) in a width direction is less than or equal to 20 mm; and a rated current of the RC-IGBT is defined as I, I satisfies a relationship: 26A≤I≤35A.

2. The power module of claim 1, wherein, the aspect ratio of the RC-IGBT is further greater than 1.

18.

3. The power module of claim 1, wherein, the length of the packaging resin (10) in the length direction is further greater than or equal to 31.5 mm; and the width of the packaging resin (10) in the width direction is further greater than or equal to 16 mm.

4. The power module of claim 1, wherein, The area of the heat dissipation substrate (30) is set to S, and S satisfies the relationship: 161.25 mm 2 ≤ S ≤ 275 mm 2 .

5. The power module of claim 1, wherein, a width of the RC-IGBT is greater than or equal to 2.0 mm and less than or equal to 3.4 mm.

6. The power module of claim 1, wherein, a power side pad (31) is provided on a side of the first surface of the heat dissipation substrate (30), and the RC-IGBT is arranged on the power side pad (31).

7. The power module of claim 6, wherein, the heat dissipation substrate (30) comprises: an insulating layer having a first surface and a second surface opposite to the first surface, wherein the insulating layer is at least one of an aluminum nitride ceramic layer or a silicon nitride ceramic layer; a conductive layer arranged at least on the first surface of the insulating layer, wherein the conductive layer comprises: a first conductive layer arranged on the first surface, or a first conductive layer arranged on the first surface and a second conductive layer arranged on the second surface, wherein a surface of the first conductive layer away from the insulating layer constitutes at least part of the first surface of the heat dissipation substrate, and the first conductive layer comprises the power side pad (31).

8. The power module of claim 6, wherein, a plurality of RC-IGBTs are provided, a plurality of power side pads (31) are provided, and the RC-IGBTs are arranged at intervals in the length direction, wherein the plurality of RC-IGBTs comprise at least one high-voltage power side RC-IGBT (321) and at least one low-voltage power side RC-IGBT (331), and the high-voltage power side RC-IGBT (321) and the low-voltage power side RC-IGBT (331) are arranged on different power side pads (31) respectively.

9. The power module of claim 8, wherein, a number of the low-voltage power side RC-IGBT (331) is three, a number of the high-voltage power side RC-IGBT is three, and the power side pads (31) comprise: three low-voltage power side pads (33) arranged at intervals in the length direction; A high-voltage power side pad (32) is one, one of the high-voltage power side pad (32) is spaced apart from three low-voltage power side pads (33) in the length direction, the two sides of the packaging resin (10) along the length direction are respectively set as a first side (11) and a second side (12), the low-voltage power side pad (33) is more adjacent to the first side (11) in the length direction, the high-voltage power side pad (32) is more adjacent to the second side (12) in the length direction, three low-voltage power side RC-IGBTs (331) are respectively and one-to-one arranged on three low-voltage power side pads (33), three high-voltage power side RC-IGBTs (321) are arranged on one high-voltage power side pad (32), and three high-voltage power side RC-IGBTs are spaced apart in the length direction on the high-voltage power side pad (32).

10. The power module of claim 1, wherein, Also includes: A drive side frame (20) is partially wrapped by the packaging resin (10), the drive side frame (20) includes a drive side pad (21) and a drive side pin (24), the drive integrated circuit is arranged on the drive side pad (21), and the drive integrated circuit is electrically connected with the drive side pin (24), wherein the heat dissipation substrate (30) and the drive side frame (20) are spaced apart in the width direction; or A PCB board is wrapped by the packaging resin (10), the PCB board has a drive side pad, the power module further includes a drive side pin, the drive side pin is electrically connected with the PCB board, the drive integrated circuit is arranged on the drive side pad, and the drive integrated circuit is electrically connected with the drive side pin, wherein the heat dissipation substrate (30) and the PCB board are spaced apart in the width direction.

11. The power module of claim 10, wherein, The drive side pad (21) includes: A low-voltage drive side pad (23) is one; A high-voltage drive side pad (22) is one, one of the high-voltage drive side pad (22) and one of the low-voltage drive side pad (23) are spaced apart in the length direction, the two sides of the packaging resin (10) along the length direction are respectively set as a first side (11) and a second side (12), the low-voltage drive side pad (23) is more adjacent to the first side (11) in the length direction, the high-voltage drive side pad (22) is more adjacent to the second side (12) in the length direction, the drive integrated circuit includes a low-voltage drive integrated circuit (231) and a high-voltage drive integrated circuit (221), one of the low-voltage drive integrated circuit (231) is arranged on one of the low-voltage drive side pad (23), and one of the high-voltage drive integrated circuit (221) is arranged on one of the high-voltage drive side pad (22), wherein, When the number of RC-IGBTs is multiple, and the multiple RC-IGBTs include multiple low-voltage power side RC-IGBTs and multiple high-voltage power side RC-IGBTs, one low-voltage drive integrated circuit (231) is electrically connected with multiple low-voltage power side RC-IGBTs (331) respectively, and one high-voltage drive integrated circuit (221) is electrically connected with multiple high-voltage power side RC-IGBTs (321) respectively.

12. The power module of claim 11, wherein, Further comprising a bootstrap chip (251), which is arranged on the drive side pin (24), wherein the drive side pin (24) further comprises: A floating power supply voltage pin (241) is arranged on the side of the high-voltage drive side pad (22) away from the heat dissipation substrate (30) in the width direction, the floating power supply voltage pin (241) has a bootstrap chip pad (25), and the bootstrap chip (251) is arranged on the bootstrap chip pad (25); A floating power supply ground pin (242) is arranged on the side of the high-voltage drive side pad (22) away from the heat dissipation substrate (30) in the width direction, and the floating power supply ground pin (242) is arranged apart from the floating power supply voltage pin (241) in the length direction; A chip power supply voltage pin (243) is arranged apart in the width direction between the high-voltage drive side pad (22) and the floating power supply voltage pin (241) and extends in the length direction, the bootstrap chip (251) is electrically connected with the chip power supply voltage pin (243), and the floating power supply voltage pin (241) and the floating power supply ground pin (242) are both electrically connected with the high-voltage drive integrated circuit (221).

13. The power module of claim 11, wherein, Further comprising a bootstrap chip, which is integrated in the high-voltage drive integrated circuit, wherein the drive side pin (24) further comprises: A floating power supply voltage pin (241) is arranged apart in the width direction on the side of the high-voltage drive side pad (22) away from the heat dissipation substrate (30); A floating power supply ground pin (242) is arranged apart in the width direction on the side of the high-voltage drive side pad (22) away from the heat dissipation substrate (30), and the floating power supply ground pin (242) is arranged apart from the floating power supply voltage pin (241) in the length direction; A chip power supply voltage pin (243), the high-voltage drive integrated circuit (221) is electrically connected with the chip power supply voltage pin (243), and the floating power supply voltage pin (241) and the floating power supply ground pin (242) are both electrically connected with the high-voltage drive integrated circuit (221).

14. The power module of claim 1, wherein, Further comprising: power side pins (34), part of the power side pins (34) are wrapped by the packaging resin (10) and located on a side of the heat dissipation substrate (30) away from the drive integrated circuit (20) along the width direction, the power side pins (34) are electrically connected with the RC-IGBT; wherein each of the RC-IGBT comprises: a gate pad (35) electrically connected with the drive integrated circuit, an emitter pad (36) provided with a pin electrical connection pad (361), a pin electrical connection line (262) is connected between the pin electrical connection pad (361) and the power side pin (34), the pin electrical connection pad (361) is arranged in extension in the width direction, a plurality of pin electrical connection pads (361) are arranged on each of the RC-IGBT, the plurality of pin electrical connection pads (361) on each of the RC-IGBT are arranged in intervals in the width direction, a plurality of pin electrical connection lines (262) are arranged between each of the RC-IGBT and the corresponding power side pin (34), the plurality of pin electrical connection lines (262) on each of the RC-IGBT are connected with the plurality of pin electrical connection pads (361) one by one.

15. The power module of claim 14, wherein, The packaging resin (10) is set to have a first side (11) and a second side (12) on both sides along the length direction, the pin electrical connection line (262) is inclined to extend towards the side close to the first side (11) of the pin electrical connection pad (361) in the width direction, an included angle α is formed between the pin electrical connection line (262) and the pin electrical connection pad (361), and α satisfies the relationship: 120°≤α≤178°.

16. The power module of claim 15, wherein, The length of the pin electrical connection line (262) is L5, and L5 satisfies the relationship: 5mm≤L5≤9mm.

17. The power module according to any one of claims 1 to 16, wherein the RC-IGBT comprises a termination structure, and the termination structure adopts a transverse variable doping structure.

18. The power module according to any one of claims 1 to 16, wherein the RC-IGBT has an aspect ratio less than or equal to 1.

498.

19. An electronic device, comprising: The power module (100) according to any one of claims 1 to 18.

Images