Processing apparatus for processing substrate

Abstract

A processing apparatus for processing a substrate includes: a vacuum chamber including a processing space including an inner wall disposed adjacent to the processing space and an outer wall disposed outside the inner wall and spaced apart from the inner wall; and a plurality of heaters disposed between the inner wall and the outer wall.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a processing apparatus. More particularly, the present disclosure relates to a processing apparatus for processing a substrate of a display apparatus. BACKGROUND

[0002] With the development of information technology, the importance of a display apparatus as a means of information communication to a user is increasing. Various types of display apparatuses are widely applied to various fields. For example, a display apparatus can be implemented as a liquid crystal display apparatus ("LCD"), an organic light emitting display apparatus ("OLED"), a plasma display apparatus ("PDP"), or a quantum dot display apparatus.

[0003] Among different types of display apparatuses, a display apparatus including a light emitting apparatus including an organic material has been proposed. An organic material layer of the light emitting apparatus can be formed through an inkjet process.

[0004] The inkjet process can include a process of ejecting ink, a process of drying the ink, and a process of completing a thin film through solidification of the ink. The drying process and / or the solidification process can be performed within a chamber. SUMMARY

[0005] Embodiments of the present disclosure provide a processing apparatus that can reduce or eliminate foreign substances of a thin film.

[0006] A processing apparatus for processing a substrate according to an embodiment of the present disclosure includes a vacuum chamber including a processing space, including an inner wall disposed adjacent to the processing space and an outer wall disposed outside of the inner wall and spaced apart from the inner wall, and a plurality of heaters disposed between the inner wall and the outer wall.

[0007] In an embodiment, the processing apparatus can further include a first remover disposed in the processing space of the vacuum chamber. The first remover can include a mesh grid and a sorbent disposed in the mesh grid.

[0008] In an embodiment, the sorbent can include at least one of carbon and a porous material.

[0009] In an embodiment, the first remover can be configured to adsorb an organic material.

[0010] In an embodiment, the processing space can be defined by a first side surface and a second side surface facing each other in a first direction, at least one side wall extending between the first side surface and the second side surface, and the first remover can be disposed in the vacuum chamber on each of the first side surface and the second side surface facing each other in the first direction.

[0011] In an embodiment, the processing space can be defined by a first side and a second side facing each other in a first direction, a first sidewall and a second sidewall facing each other in a second direction intersecting the first direction, a third sidewall and a fourth sidewall facing each other in a third direction intersecting each of the first direction and the second direction, the plurality of heaters can include a first heater and a second heater, the first heater can be disposed adjacent to the first side, and the second heater can be disposed adjacent to the second side.

[0012] In an embodiment, the first heater can be configured to apply a first amount of heat, and the second heater can be configured to apply a second amount of heat less than the first amount of heat.

[0013] In an embodiment, the processing apparatus can further include a second remover disposed outside the vacuum chamber, and a connection pipe connected to the second remover, passing through the outer wall and the inner wall of the vacuum chamber, and providing a path for the fluid in the processing space to move from the processing space to the second remover.

[0014] In an embodiment, the fluid can include an organic material.

[0015] In an embodiment, the first side of the vacuum chamber can be disposed above the second side, and the second remover can be connected to the connection pipe adjacent to the second side.

[0016] A processing apparatus for processing a substrate according to an embodiment of the disclosure includes a vacuum chamber including a processing space defined by a first side and a second side facing each other in a first direction, a first sidewall and a second sidewall facing each other in a second direction intersecting the first direction, a third sidewall and a fourth sidewall facing each other in a third direction intersecting each of the first direction and the second direction, wherein each of the first sidewall, the second sidewall, the third sidewall, and the fourth sidewall includes an inner wall disposed adjacent to the processing space and an outer wall disposed outside the inner wall and spaced apart from the inner wall, a plurality of heaters disposed between the inner wall and the outer wall, and a stage disposed in the processing space between the first side and the second side.

[0017] In an embodiment, the processing apparatus can further include a first remover disposed in the processing space of the vacuum chamber. The first remover can include a mesh grid and a sorbent disposed in the mesh grid.

[0018] In an embodiment, the sorbent can include at least one of carbon and a porous material.

[0019] In an embodiment, the first remover can be configured to adsorb an organic material.

[0020] In an embodiment, the first evacuator can be disposed in the vacuum chamber on each of the first side and the second side facing each other in the first direction.

[0021] In an embodiment, the plurality of heaters can include a first heater disposed adjacent to the first side and a second heater disposed adjacent to the second side, and the first heater can be configured to apply a first amount of heat and the second heater can be configured to apply a second amount of heat different from the first amount of heat.

[0022] In an embodiment, the processing apparatus can further include a second evacuator disposed outside the vacuum chamber, and a connection pipe connected to the second evacuator, passing through the outer wall and the inner wall of the vacuum chamber, and providing a path for fluid in the processing space to move from the processing space to the second evacuator.

[0023] In an embodiment, the first side of the vacuum chamber can be disposed above the second side, and the second evacuator can be connected to the connection pipe adjacent to the second side.

[0024] A processing apparatus for processing a substrate according to an embodiment of the disclosure includes a vacuum chamber including a processing space defined by a first side and a second side facing each other in a first direction and at least one sidewall extending between the first side and the second side, the at least one sidewall including an inner wall disposed adjacent to the processing space and an outer wall disposed outside of and spaced apart from the inner wall, and a plurality of heaters disposed between the inner wall and the outer wall and including a first heater disposed adjacent to the first side and a second heater disposed adjacent to the second side.

[0025] In an embodiment, the first evacuator can be disposed in the vacuum chamber on each of the first side and the second side facing each other in the first direction, the second evacuator can be disposed outside the vacuum chamber, and the connection pipe can be connected to the second evacuator and can pass through the outer wall and the inner wall of the vacuum chamber.

[0026] A processing apparatus for processing a substrate according to an embodiment of the disclosure includes a vacuum chamber including a processing space defined by a first side and a second side facing each other in a first direction and at least one sidewall extending between the first side and the second side, the at least one sidewall including an inner wall disposed adjacent to the processing space and an outer wall disposed outside of and spaced apart from the inner wall, and a plurality of heaters disposed between the inner wall and the outer wall and including a first heater disposed adjacent to the first side and a second heater disposed adjacent to the second side.

[0027] Further, the processing apparatus can include a first remover disposed on each of a first side and a second side facing each other in a first direction in the vacuum chamber, a second remover disposed outside the vacuum chamber, and a connection pipe connected to the second remover, passing through an outer wall and an inner wall of the vacuum chamber.

[0028] The processing apparatus according to an embodiment of the disclosure includes a vacuum chamber including a processing space defined by a first side and a second side facing each other in a first direction, a first sidewall and a second sidewall facing each other in a second direction intersecting the first direction, a third sidewall and a fourth sidewall facing each other in a third direction intersecting each of the first direction and the second direction, wherein each of the first sidewall, the second sidewall, the third sidewall, and the fourth sidewall includes an inner wall disposed adjacent to the processing space and an outer wall disposed outside the inner wall and spaced apart from the inner wall, and a plurality of heaters disposed between the inner wall and the outer wall. Accordingly, the processing apparatus can remove foreign substances generated during thin film formation by heating.

[0029] Further, the processing apparatus can further include a first remover disposed in the processing space of the vacuum chamber. Accordingly, the processing apparatus can remove foreign substances in a liquid state by adsorption.

[0030] Further, the processing apparatus can further include a second remover disposed outside the vacuum chamber, and a connection pipe connected to the second remover, passing through the outer wall and the inner wall of the vacuum chamber, and providing a path for fluid in the processing space to move from the processing space to the second remover. Accordingly, the processing apparatus can exhaust foreign substances in a gaseous state.

[0031] Further, the plurality of heaters can include a first heater and a second heater. The first heater can be disposed adjacent to the first side. The second heater can be disposed adjacent to the second side. A first heating amount of the first heater can be greater than a second heating amount of the second heater. Accordingly, foreign substances can be removed along a fluid flow due to a temperature difference. BRIEF DESCRIPTION OF DRAWINGS

[0032] The accompanying drawings are included to provide a further understanding of the disclosure, illustrate embodiments of the disclosure, and together with the description, explain the principles of the disclosure, in which:

[0033] Figure 1 to illustrate a cross-sectional view of a processing apparatus according to an embodiment of the disclosure;

[0034] Figure 2 to illustrate a view of a first remover included in a processing apparatus according to an embodiment of the disclosure; Figure 1

[0035] Figure 3 to illustrate a view of a second remover included in a processing apparatus according to an embodiment of the disclosure; Figure 1 ​a view of a second remover in the processing apparatus of

[0036] Figure 4 a view of a substrate disposed in the processing apparatus of

[0037] Figure 5 a view of a substrate disposed in the processing apparatus of Figure 4

[0038] Figure 6 a view of a sub-pixel manufactured by the processing apparatus of Figure 4

[0039] Figure 7 a view of a fluid flow in the processing apparatus of Figure 1

[0040] Figure 8 a view of a substrate disposed in the processing apparatus of Figure 1

[0041] Figure 9 a view of a sub-pixel manufactured by the processing apparatus of Figure 1

[0042] Figure 10 a view of an effect of the processing apparatus of Figure 1

[0043] Figure 11 a view of a display device formed using the processing apparatus of Figure 1 DETAILED DESCRIPTION

[0044] Exemplary, non-limiting embodiments of the present disclosure will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, and by reference to the detailed description below, but not limited to, the examples described. Like reference numerals are used to refer to like elements throughout and redundant descriptions can be omitted.

[0045] Figure 1 a view of a cross-section of the processing apparatus according to an embodiment of the present disclosure.

[0046] Referring to Figure 1 In an embodiment, the processing apparatus DE1 can include a vacuum chamber CH1, a stage BP, a pressure reducer PU, a heating unit HU, a plurality of heaters HT, a first remover EX1, and a second remover EX2.

[0047] ​​​​​​​In an embodiment, the vacuum chamber CH1 can provide (or include) a sealed processing space PS. To this end, in an embodiment, the vacuum chamber CH1 can include one or more inner surfaces. For example, the vacuum chamber CH1 can include a first side (or first surface) S1 and a second side (or second surface) S2. In an embodiment, the first side S1 and the second side S2 can face each other in a first direction DR1. In an embodiment, at least one side wall can extend between the first side S1 and the second side S2. For example, a first side wall SS1, a second side wall SS2, a third side wall (not shown), and a fourth side wall (not shown) can extend between the first side S1 and the second side S2. In an embodiment, the processing space PS can be defined by the first side S1, the second side S2, and the at least one side wall.

[0048] The first side S1 can be located above the second side S2. The first side wall SS1 and the second side wall SS2 can face each other in a second direction DR2. The third side wall and the fourth side wall can face each other in a third direction DR3. In an embodiment, the first side wall SS1 and the second side wall SS2 can be left and right side walls, respectively, and the third side wall and the fourth side wall can be front and back side walls, respectively.

[0049] The second direction DR2 can intersect the first direction DR1. Further, the third direction DR3 can intersect each of the first direction DR1 and the second direction DR2. For example, the second direction DR2 can be an X direction, the third direction DR3 can be a Y direction, and the first direction DR1 can be a Z direction. However, the present disclosure is not limited thereto.

[0050] The inner surface can be a surface of a wall of the vacuum chamber CH1. In an embodiment, one or more of the first side wall SS1, the second side wall SS2, the third side wall, and the fourth side wall can include an inner wall IW and an outer wall OW. For example, each of the first side wall SS1, the second side wall SS2, the third side wall, and the fourth side wall can include an inner wall IW and an outer wall OW. The inner wall IW can be adjacent to the processing space PS, and the outer wall OW can be disposed outside of and spaced apart from the inner wall IW. In other words, the inner wall IW and the outer wall OW can be located in series in a direction from the sealed processing space PS of the vacuum chamber CH1 toward the outside.

[0051] The vacuum chamber CH1 can maintain a normal pressure atmosphere, a vacuum atmosphere, or a vacuum dry atmosphere, in which a specific gas can be injected into the sealed processing space PS. For example, the gas can include nitrogen. However, the present disclosure is not limited thereto.

[0052] The vacuum chamber CH1 can accommodate a substrate SUB, that is, the processing device DE1 can be a device for processing the substrate SUB. In an embodiment, ink can be deposited on the substrate SUB.

[0053] The substrate SUB can include a transparent or non-transparent material. In an embodiment, the substrate SUB can have a rigid characteristic. For example, the substrate SUB having a rigid characteristic can include glass or metal, etc.

[0054] In an embodiment, the ink can include a luminescent material and a solvent. In an embodiment, the ink can include one or more of various organic materials. In an embodiment, the luminescent material can include an organic material. For example, the organic material of the luminescent material can include quantum dots. The quantum dots can emit light having a unique wavelength. In an embodiment, the quantum dots can include a semiconductor nanocrystal material. Embodiments of the semiconductor nanocrystal material can include Group IV nanocrystals, Group II-VI compound nanocrystals, Group III-V compound nanocrystals, or Group IV-VI nanocrystals, etc. These materials can be used individually or in combination with each other. In an embodiment, the quantum dots can have a core-shell structure. The core can include a nanocrystal, and the shell can surround the core. The shell can include a material that can act as a protective layer for maintaining the semiconductor properties. For example, the shell can prevent or reduce chemical degradation of the core. The shell can include a material that can act as a charging layer for providing electrophoretic properties to the quantum dots.

[0055] In an embodiment, the luminescent material can include an organic material. However, the present disclosure is not limited thereto. For example, the luminescent material can include an inorganic material.

[0056] As described herein, the ink can include a solvent and a luminescent material. In an embodiment, the solvent can be removed from the processing space PS. A first portion of the solvent can be removed from the ink by a drying process, and a second portion of the solvent can be removed from the ink by a curing process. Accordingly, a thin film can be formed on the substrate SUB.

[0057] The stage BP can be a support structure. For example, inside the vacuum chamber CH1, the substrate SUB can be disposed on the stage BP, and the stage BP can support the substrate SUB. In an embodiment, the stage BP and the substrate SUB on the stage BP can be disposed in the processing space PS between the first surface S1 and the second surface S2 of the vacuum chamber CH1. In an embodiment, a driving device can be connected to the stage BP. The driving device can move the stage BP upward / downward (e.g., in the first direction DR1). In an embodiment, the driving device can be an actuator or a pneumatic cylinder, etc.

[0058] In an embodiment, a pressure reducer PU can be connected to the vacuum chamber CH1. The pressure reducer PU can discharge gas from the vacuum chamber CH1. For example, the pressure reducer PU can discharge gas inside the vacuum chamber CH1 to the outside of the vacuum chamber CH1. By discharging the gas, the pressure reducer PU can reduce the internal pressure of the vacuum chamber CH1. In an embodiment, the pressure reducer PU can include a dry pump or a turbo pump, etc. The pressure reducer PU can discharge gas and substances evaporated from the ink on the substrate SUB to the outside of the vacuum chamber CH1. For example, the pressure reducer PU can discharge the solvent from the vacuum chamber CH1.

[0059] In an embodiment, the heating unit HU can be disposed on the stage BP. For example, the heating unit HU can be disposed between the stage BP and the substrate SUB. The heating unit HU can generate heat, which can heat the substrate SUB. The heat can help to evaporate the solvent from the ink on the substrate SUB. In an embodiment, the heating unit HU can include a resistor, a heat ray, or a heat source (e.g., infrared ray, etc.), etc. These can be used alone, or in combination with each other. However, the present disclosure is not limited thereto.

[0060] In an embodiment, the heating unit HU can include a control unit, or can be connected to the control unit. In an embodiment, the control unit can include a programmable logic device ("PLD") such as a field programmable gate array ("FPGA"), an application specific integrated circuit ("ASIC"), or a computer including a program. These can be used alone, or in combination with each other. However, the present disclosure is not limited thereto.

[0061] The control unit can control the operation of one or more other components. For example, the control unit can control the temperature of the heating unit HU. In another embodiment, the control unit can control the internal pressure of the vacuum chamber CH1.

[0062] In an embodiment, a plurality of heaters HT can be disposed between the inner wall IW and the outer wall OW of the vacuum chamber CH1. For example, the plurality of heaters HT can be directly disposed on the inner wall IW, between the inner wall IW and the outer wall OW of the vacuum chamber CH1. However, the present disclosure is not limited thereto. For example, the plurality of heaters HT can be supported at an intermediate portion between the inner wall IW and the outer wall OW of the vacuum chamber CH1.

[0063] In an embodiment, the plurality of heaters HT can include a resistor, a heat ray, or a heat source (e.g., infrared ray, etc.), etc. These can be used alone, or in combination with each other. However, the present disclosure is not limited thereto.

[0064] In an embodiment, the plurality of heaters HT can be connected to a control unit. The control unit can control a temperature of each of the plurality of heaters HT. For example, the plurality of heaters HT can apply a same amount of heat or can apply different amounts of heat.

[0065] In an embodiment, the plurality of heaters HT can include a first heater HT1 and a second heater HT2. The first heater HT1 can be disposed adjacent to the first surface S1, and the second heater HT2 can be disposed adjacent to the second surface S2.

[0066] Each of the plurality of heaters HT can apply a different amount of heat. For example, in an embodiment, the first heater HT1 and the second heater HT2 can apply different amounts of heat. For example, the first heater HT1 can have a first amount of heat Q1, and the second heater HT2 can have a second amount of heat Q2. In an embodiment, each of the plurality of heaters HT can have a temperature between about 60 degrees and about 300 degrees. However, the present disclosure is not limited thereto.

[0067] In an embodiment, the first amount of heat Q1 can be greater than the second amount of heat Q2. In other words, the first heater HT1 disposed at the upper portion of the vacuum chamber CH1 can have a higher temperature than the second heater HT2 disposed at the lower portion of the vacuum chamber CH1. For example, the first heater HT1 can be about 300 degrees, and the second heater HT2 can be about 150 degrees. Accordingly, in the processing space PS of the vacuum chamber CH1, a fluid flow can be formed from the upper portion of the processing space PS toward the lower portion of the processing space PS.

[0068] In an embodiment, a first remover EX1 can be disposed in the processing space PS of the vacuum chamber CH1. For example, the first remover EX1 can be disposed on at least one of the first side surface S1 and the second side surface S2. As described herein, the first side surface S1 and the second side surface S2 can face each other in the first direction DR1.

[0069] When processing the substrate SUB (e.g., a drying process and / or a curing process), a solvent and / or a luminescent material (hereinafter, referred to as “foreign matter”) can move toward the upper portion of the substrate SUB or toward the lower portion of the substrate SUB. The first remover EX1 can remove the foreign matter moving toward the upper portion and / or the lower portion of the substrate SUB. Specifically, the foreign matter moving toward the upper portion of the substrate SUB can be removed by the first remover EX1 disposed on the first surface S1. The foreign matter moving toward the lower portion of the substrate SUB can be removed by the first remover EX1 disposed on the second surface S2.

[0070] However, the present disclosure is not limited thereto. For example, when the exhaust device is disposed on the first side of the substrate SUB (e.g., the upper portion of the substrate SUB), the first remover EX1 can be disposed on the second side of the substrate SUB (e.g., the lower portion of the substrate SUB) opposite the first side of the substrate SUB. Specifically, foreign substances moving toward the first side of the substrate SUB can be removed by the exhaust device disposed on the first side S1. Foreign substances moving toward the second side of the substrate SUB can be removed by the first remover EX1 disposed on the second side S2.

[0071] In an embodiment, the first remover EX1 can remove foreign substances that can be in a liquid form. However, the present disclosure is not limited thereto.

[0072] The first remover EX1 can be installed in the vacuum chamber CH1. The first remover EX1 can be removable from the vacuum chamber CH1. To this end, in an embodiment, the first remover EX1 can include a mesh grid (see Figure 2 of the mesh grid MS) and a sorbent (see Figure 2 of the sorbent AD). In an embodiment, the sorbent AD can be disposed inside the mesh grid MS.

[0073] Foreign substances can be deposited in the first remover EX1 during processing (e.g., a drying process and / or a curing process) of the substrate SUB. Accordingly, contamination of the substrate SUB by foreign substances can be reduced or prevented. In an embodiment, the first remover EX1 can be periodically replaced or recharged. For example, in the first remover EX1, the sorbent can be replaced, or the mesh grid and the sorbent can be simultaneously replaced. See Figure 2 A detailed description of the first remover EX1 is described.

[0074] In an embodiment, the processing device DE1 can further include a second remover EX2. In an embodiment, the second remover EX2 can be disposed outside the vacuum chamber CH1. For example, the second remover EX2 can be disposed adjacent to one side wall (e.g., the second side wall SS2) of the vacuum chamber CH1. However, the present disclosure is not limited thereto. For example, the second remover EX2 can be disposed adjacent to another side wall (e.g., the first side wall SS1, the third side wall, or the fourth side wall) of the vacuum chamber CH1.

[0075] See Figure 3In an embodiment, the second remover EX2 can be connected to the connection pipe CT, which can be disposed adjacent to the second heater HT2. As described herein, the first heater HT1 located at the upper portion of the vacuum chamber CH1 can have a higher temperature than the temperature of the second heater HT2 located at the lower portion of the vacuum chamber CH1. In other words, the second remover EX2 can be connected to the connection pipe CT disposed at the lower portion of the vacuum chamber CH1. However, the present disclosure is not limited thereto. For example, the second remover EX2 can be connected to the connection pipe CT disposed at the lower surface (e.g., the second surface S2) of the vacuum chamber CH1.

[0076] In the processing (e.g., drying process and / or curing process) of the substrate SUB, the solvent and / or the luminescent material can move to the side of the substrate SUB. The second remover EX2 can remove the foreign substances moving to the side of the substrate SUB. The foreign substances moving to the side of the substrate SUB along the fluid flow formed in the processing space PS can be exhausted outside the vacuum chamber CH1 by and / or through the second remover EX2. See Figure 3 A detailed description of the second remover EX2 is described.

[0077] In an embodiment, the second remover EX2 can remove the foreign substances in the form of gas, however, the present disclosure is not limited thereto.

[0078] Figure 1 For example, and the processing apparatus DE1 can further include additional components. Also, some components of the processing apparatus DE1 can be omitted. Further, some components of the processing apparatus DE1 can be changed.

[0079] In an embodiment, and referring to Figure 1 The plurality of heaters HT can include the first heater HT1 and the second heater HT2, however, the plurality of heaters HT can include three or more heaters. For an embodiment, each of the three heaters can heat a first heating amount Q1, a second heating amount Q2, and a third heating amount, respectively. The first heating amount Q1, the second heating amount Q2, and the third heating amount can be the same heating amount, or two or more heating amounts. For example, the third heating amount can be different from both the first heating amount Q1 and the second heating amount Q2.

[0080] In one embodiment, an intermediate partition wall IP may be further included between the inner wall IW and the outer wall OW. For example, a plurality of intermediate partition walls IP may extend between the inner wall IW and the outer wall OW in the second direction. The intermediate partition wall IP may divide the space between the inner wall IW and the outer wall OW into a plurality of cavities CV, each of which may accommodate one or more heaters HT. For example, the upper cavity may include a first heater HT1, and the lower cavity may include a second heater HT2. The cavity CV may include different heaters. For example, the cavity CV provided at the middle portion of the processing space PS of the vacuum chamber CH1 may include one or more first heaters HT1 and one or more second heaters HT2. However, the present disclosure is not limited thereto. The intermediate partition wall IP may be provided to improve the structural strength of the outer wall OW and / or the inner wall IW.

[0081] Figure 2 For example, include Figure 1 FIG. 1 is a view of a first remover EX1 in a processing device.

[0082] See also Figure 2 The first remover EX1 may include a mesh grid MS and an adsorbent AD. In one embodiment, the adsorbent AD may be disposed inside the mesh grid MS.

[0083] The mesh MS may have a structure in which a plurality of holes are defined in a layer. The mesh MS may have a structure having one or more layers, and each layer may have a plurality of holes. Accordingly, foreign matter may flow into the structure of the mesh MS through the plurality of holes.

[0084] In one embodiment, the mesh grid MS may include stainless steel ("SUS"), etc. For example, each layer may be formed of SUS and include a plurality of holes. However, the present disclosure is not limited thereto.

[0085] In one embodiment, the adsorbent AD may include carbon and / or porous materials, etc. These materials may be used alone or in combination. However, the present disclosure is not limited thereto. In one embodiment, the adsorbent AD may be disposed between layers of the mesh MS.

[0086] The first remover EX1 can remove foreign matter generated during the processing (e.g., drying process and / or curing process) of the substrate SUB. In one embodiment, the first remover EX1 can remove organic material. As described herein, the organic material can be in liquid form. However, the present disclosure is not limited thereto. The organic material can be adsorbed by the adsorbent AD and removed from the processing space PS.

[0087] Figure 3 For example, include Figure 1 FIG. 4 is a view of a second remover in a processing device.

[0088] Referring to Figure 1 and Figure 3 The processing apparatus DE1 can further include a connection tube CT, and in an embodiment, the second remover EX2 can be disposed outside the vacuum chamber CH1. In an embodiment, the connection tube CT can be connected between the vacuum chamber CH1 and the second remover EX2.

[0089] In an embodiment, the second remover EX2 can include a pump that provides a suction pressure. The pump can discharge foreign substances in the processing space PS outside the vacuum chamber CH1 via the connection tube CT. However, the disclosure is not limited thereto.

[0090] The connection tube CT can pass through the outer wall OW and the inner wall IW of the vacuum chamber CH1. Accordingly, the connection tube CT can provide a path through which foreign substances can move from the processing space PS to the second remover EX2.

[0091] The second remover EX2 can remove foreign substances generated during processing (e.g., a drying process and / or a curing process) of the substrate SUB. In an embodiment, the second remover EX2 can remove organic materials. As described herein, the organic materials can be in a gas form. However, the disclosure is not limited thereto. The organic materials can be removed from the processing space PS by a suction pressure of the second remover EX2.

[0092] As described above, in an embodiment, the second remover EX2 can be connected to a connection tube disposed adjacent to the second heater HT2 (or the second side surface S2). In other words, the second remover EX2 can be connected to a connection tube disposed at a low temperature location in the vacuum chamber CH1. However, the disclosure is not limited thereto. For example, the second remover EX2 can be connected to a connection tube disposed at a lower portion (e.g., the second surface S2) of the vacuum chamber CH1. Accordingly, foreign substances stagnating in the lower portion of the vacuum chamber CH1 can be discharged outside the vacuum chamber CH1.

[0093] Figure 4 A view to illustrate fluid flow in a processing apparatus according to a comparative embodiment. Figure 5 A view to illustrate a substrate in a processing apparatus according to Figure 4 A view to illustrate a sub-pixel manufactured by a processing apparatus according to Figure 6 A view to illustrate a sub-pixel manufactured by a processing apparatus according to Figure 4 A view to illustrate a sub-pixel manufactured by a processing apparatus according to

[0094] Referring to Figure 4 The processing apparatus DE' can not include the first remover EX1 and the second remover EX2.

[0095] For ease of explanation, other components can be omitted, and fluid flow F1', F2', and / or F3' of the substrate SUB' and the processing space PS' is shown.

[0096] As described herein, the processing apparatus DE' can include a vacuum chamber CH1' in which a drying process and / or a curing process can be performed.

[0097] In an embodiment, when the drying process and / or the curing process is performed, a solvent and / or a light emitting material included in the ink can be evaporated (or liquefied).

[0098] In the vacuum chamber CH1', a first fluid flow F1' in which foreign substances can move toward a side portion of the substrate SUB', a second fluid flow F2' in which foreign substances can move toward an upper portion of the substrate SUB', and a third fluid flow F3' in which foreign substances can move toward a lower portion of the substrate SUB' can occur.

[0099] Referring to Figure 5 The substrate SUB' which can be provided in the processing apparatus DE' can include a plurality of pixels PX'. In an embodiment, each of the plurality of pixels PX' can include a first sub-pixel SP1', a second sub-pixel SP2', and a third sub-pixel SP3'. However, the present disclosure is not limited thereto. For example, each of the plurality of pixels PX' can include two or four or more sub-pixels.

[0100] Each of the first sub-pixel SP1', the second sub-pixel SP2', and the third sub-pixel SP3' can emit light of different colors. For example, the first sub-pixel SP1' can emit red light, the second sub-pixel SP2' can emit green light, and the third sub-pixel SP3' can emit blue light. However, the present disclosure is not limited thereto. For example, each of the first sub-pixel SP1', the second sub-pixel SP2', and the third sub-pixel SP3' can emit light of the same color (e.g., white light).

[0101] The second sub-pixel SP2' and the third sub-pixel SP3' can have the same stack structure as that of the first sub-pixel SP1'. Therefore, hereinafter, the following description will mainly describe the first sub-pixel SP1'.

[0102] Referring to Figure 6 In an embodiment, the first sub-pixel SP1' can include a first electrode EL1, a light emitting layer EML', and a second electrode EL2 which can be sequentially stacked. Holes of the first electrode EL1 and electrons of the second electrode EL2 can meet in the light emitting layer EML' and light can be emitted.

[0103] A functional layer can be further disposed between the first electrode EL1 and the second electrode EL2. In an embodiment, the functional layer can include a hole injection layer HIL, a hole transport layer HTL, an electron transport layer ETL, and / or an electron injection layer EIL. In an embodiment, the hole injection layer HIL can inject holes, the hole transport layer HTL can transport holes to the light emitting layer EML’, the electron injection layer EIL can inject electrons, and the electron transport layer ETL can transport electrons to the light emitting layer EML’. However, the present disclosure is not limited thereto. For example, layers included in the stack structure of the first sub-pixel SP1’ can be changed, omitted, and / or added. For example, the first sub-pixel SP1’ can further include a capping layer CPL on the second electrode EL2. The capping layer CPL can reduce or prevent damage to the second electrode EL2 during post-processing.

[0104] As shown in Figure 4 , in the vacuum chamber CH1’, foreign substances can move into the first fluid flow F1’, the second fluid flow F2’, and / or the third fluid flow F3’.

[0105] In this case, the light emitting layer EML’ included in the first sub-pixel SP1’ can include a first light emitting layer ELR and a second light emitting layer ELB. In an embodiment, the first light emitting layer ELR can include a red light emitting material. In an embodiment, the second light emitting layer ELB can include a blue light emitting material. In this case, color light, which is a mixture of red light and blue light, can be emitted from the first sub-pixel SP1’. Accordingly, the display quality (e.g., color mixing or light emitting efficiency, etc.) of the display apparatus can be deteriorated.

[0106] Figure 7 To illustrate a view of a fluid flow in a processing apparatus of Figure 1 . Figure 8 To illustrate a view of a substrate disposed in a processing apparatus of Figure 1 . Figure 9 To illustrate a view of a sub-pixel manufactured by a processing apparatus of Figure 1 .

[0107] Referring to Figure 7 , a processing apparatus DE1 according to an embodiment of the present disclosure can include a first remover EX1 and a second remover EX2.

[0108] Hereinafter, repeated descriptions of the processing apparatus DE1 described with reference to Figure 1 , Figure 2 , and Figure 3 may be omitted or simplified.

[0109] As described herein, the processing apparatus DE1 can include a vacuum chamber CH1, and can perform a drying process and / or a curing process.

[0110] In the vacuum chamber CH1, a first fluid flow F1 in which the evaporated (or liquefied) solvent and / or the light emitting material (i.e., the foreign substance) can move to the side of the substrate SUB, a second fluid flow F2 in which the foreign substance can move to the upper portion of the substrate SUB, and a third fluid flow F3 in which the foreign substance can move to the lower portion of the substrate SUB can occur. As Figure 7 As shown in the middle, the fluid flow FW in the direction from the upper portion to the lower portion of the vacuum chamber CH1 can have an influence than the second fluid flow F2 and / or the third fluid flow F3.

[0111] In an embodiment, the fluid flow FW guided from the upper portion of the processing space PS to the lower portion of the processing space PS can be at least partially due to the temperature of the second heater HT2 being lower than the temperature of the first heater HT1 and at least partially due to the suction pressure applied by the second extractor EX2. That is, the fluid flow FW can be a path for the foreign substance, and the foreign substance can be effectively removed from the processing space PS.

[0112] Referring to Figure 8 The substrate SUB disposed in the processing apparatus DE1 can include a plurality of pixels PX. In an embodiment, each of the plurality of pixels PX can include a first sub-pixel SP1, a second sub-pixel SP2, and a third sub-pixel SP3. However, the present disclosure is not limited thereto.

[0113] Each of the first sub-pixel SP1, the second sub-pixel SP2, and the third sub-pixel SP3 can emit light of different colors. For example, the first sub-pixel SP1 can emit red light, the second sub-pixel SP2 can emit green light, and the third sub-pixel SP3 can emit blue light. However, the present disclosure is not limited thereto. For example, each of the first sub-pixel SP1, the second sub-pixel SP2, and the third sub-pixel SP3 can emit light of the same color (e.g., white light).

[0114] The second sub-pixel SP2 and the third sub-pixel SP3 can have the same stack structure as that of the first sub-pixel SP1. Therefore, hereinafter, the following description will mainly describe the first sub-pixel SP1.

[0115] Referring to Figure 9 In an embodiment, the first sub-pixel SP1 can include a first electrode EL1, a light emitting layer EML, and a second electrode EL2, which can be sequentially stacked. Holes of the first electrode EL1 and electrons of the second electrode EL2 can meet in the light emitting layer EML, and light can be emitted by the first sub-pixel SP1.

[0116] A functional layer can be further disposed between the first electrode EL1 and the second electrode EL2. As described herein, in an embodiment, the functional layer can include a hole injection layer HIL, a hole transport layer HTL, an electron transport layer ETL, and / or an electron injection layer EIL. However, the present disclosure is not limited thereto. For example, layers included in the stack structure of the first sub-pixel SP1 can be changed, omitted, and / or added. As described herein, in an embodiment, the first sub-pixel SP1 can further include a capping layer CPL on the second electrode EL2.

[0117] As Figure 7 shown in FIG. 1, in the vacuum chamber CH1, foreign substances can move into the first fluid flow F1, the second fluid flow F2, and / or the third fluid flow F3.

[0118] As described herein with reference to Figure 7 , the foreign substances moving along the first fluid flow F1 can be removed by the second remover EX2. In addition, the foreign substances moving along the second fluid flow F2 and / or the third fluid flow F3 can be removed by the first remover EX1.

[0119] As described herein, the first heating amount Q1 of the first heater HT1 can be greater than the second heating amount Q2 of the second heater HT2. Accordingly, the fluid flow FW can be formed in a direction from an upper portion to a lower portion of the vacuum chamber CH1. Accordingly, a portion of the foreign substances can be removed by the second remover EX2 along the fluid flow FW.

[0120] Accordingly, as Figure 9 shown in FIG. 1, the first sub-pixel SP1 can be formed to include a required light emitting layer EML.

[0121] Figure 10 To illustrate the effect of the processing device of Figure 1 .

[0122] In an embodiment, in Figure 10 , the X-axis represents luminance, and the Y-axis represents light emitting efficiency.

[0123] Luminance can refer to a degree at which light is emitted from a light source. As luminance increases, light emitted by a display device can be clearly displayed in a bright surrounding environment such as outdoors during the day. A unit of luminance can be candela per square meter (Cd / m 2 ).

[0124] In an example, the luminance of the first sub-pixel SP1’ formed by the processing device DE’ of Figure 4 may be about 3.4 Cd / m 2 . In an embodiment, the luminance of the first sub-pixel SP1’ formed by the processing device DE’ of Figure 7The luminance of the first sub-pixel SP1 formed by the processing device DE1 can be about 17.8 Cd / m2 2 .

[0125] In other words, when foreign substances move within the vacuum chamber CH1', the light-emitting layer (e.g., the light-emitting layer EML') manufactured by the processing device DE' according to the comparative example can include unintended light-emitting materials (e.g., blue light-emitting materials). Accordingly, the light-emitting efficiency of the substrate SUB' can decrease. Figure 6

[0126] On the other hand, when the processing device removes the moving foreign substances through the first remover EX1 and the second remover EX2, the light-emitting layer (e.g., the light-emitting layer EML) can not include unintended light-emitting materials. Accordingly, the light-emitting efficiency can be improved or increased. Figure 9

[0127] Figure 11 FIG. 1 is a view illustrating a display device formed using a processing device according to an embodiment of the disclosure. Figure 1

[0128] Referring to FIG. 1, the display device can include a display panel PNL. The display panel PNL can include a substrate 100, a display device layer 200, an encapsulation layer 300, and a cover substrate 400. The display device layer 200 can include a circuit device layer 210 and a light-emitting device layer 220. Figure 11

[0129] The circuit device layer 210 can be disposed on the substrate 100. The circuit device layer 210 can include a buffer layer BFR, at least one transistor TR, a first insulating layer IL1, a second insulating layer IL2, a third insulating layer IL3, and a fourth insulating layer IL4. The transistor TR can include an active layer ACT, a gate electrode GE, a source electrode SE, a connection electrode CE, and a drain electrode DE. The light-emitting device layer 220 can be disposed on the circuit device layer 210. The light-emitting device layer 220 can include a fifth insulating layer IL5, a spacer SPC, and at least one light-emitting diode LD. The light-emitting diode LD can include a first electrode E1, a light-emitting layer LEL, and a second electrode E2. For example, each of the first electrode E1, the light-emitting layer LEL, and the second electrode E2 can correspond to the first electrode EL1, the light-emitting layer EML', and the second electrode EL2 of the light-emitting device DE' according to the comparative example. In addition, each of the first electrode E1, the light-emitting layer LEL, and the second electrode E2 can correspond to the first electrode EL1, the light-emitting layer EML, and the second electrode EL2 of the light-emitting device DE according to the embodiment of the disclosure. Figure 6 Figure 9

[0130] The substrate 100 can be an insulating substrate made of a transparent material. The substrate 100 can include, for example, glass or plastic.

[0131] ​​​​​​A buffer layer BFR can be disposed on the substrate 100. The buffer layer BFR can inhibit or prevent diffusion of metal atoms or impurities from the substrate 100 to the active layer ACT.

[0132] The active layer ACT can be disposed on the buffer layer BFR. The active layer ACT can be divided into a source region and a drain region which can be doped with impurities, and a channel region disposed between the source region and the drain region.

[0133] The first insulating layer IL1 can be disposed on the buffer layer BFR. The first insulating layer IL1 can be disposed on the active layer ACT. For example, the first insulating layer IL1 can cover the active layer ACT, and can be formed to have substantially the same thickness along the profile of the active layer ACT. However, the disclosure is not limited thereto. For example, the first insulating layer IL1 can include an inorganic material.

[0134] The gate electrode GE can be disposed on the first insulating layer IL1. In an embodiment, the gate electrode GE can overlap the channel region of the active layer ACT.

[0135] The second insulating layer IL2 can be disposed on the first insulating layer IL1. The second insulating layer IL2 can be disposed on the gate electrode GE. For example, the second insulating layer IL2 can cover the gate electrode GE, and can be disposed to have substantially the same thickness along the profile of the gate electrode GE. However, the disclosure is not limited thereto. For example, the second insulating layer IL2 can include an inorganic material.

[0136] The source electrode SE and the drain electrode DE can be disposed on the second insulating layer IL2. The source electrode SE can contact the source region of the active layer ACT through a first contact hole formed in the first insulating layer IL1 and the second insulating layer IL2. The drain electrode DE can contact the drain region of the active layer ACT through a second contact hole formed in the first insulating layer IL1 and the second insulating layer IL2.

[0137] The third insulating layer IL3 can be disposed on the second insulating layer IL2. The third insulating layer IL3 can be disposed on the source electrode SE and the drain electrode DE. For example, the third insulating layer IL3 can cover the source electrode SE and the drain electrode DE, and can have a substantially flat top surface without a step due to the source electrode SE or the drain electrode DE. For example, the third insulating layer IL3 can include an organic material.

[0138] The connection electrode CE can be disposed on the third insulating layer IL3. The connection electrode CE can contact the source electrode SE or the drain electrode DE through a third contact hole formed in the third insulating layer IL3.

[0139] A fourth insulating layer IL4 can be disposed on the third insulating layer IL3. The fourth insulating layer IL4 can be disposed on the connection electrode CE. For example, the fourth insulating layer IL4 can cover the connection electrode CE and can have a substantially flat top surface without a step due to the connection electrode CE. For example, the fourth insulating layer IL4 can include an organic material.

[0140] A first electrode E1 can be disposed on the fourth insulating layer IL4. The first electrode E1 can be reflective or transparent. For example, the first electrode E1 can include a metal.

[0141] The first electrode E1 can contact the connection electrode CE through a fourth contact hole formed in the fourth insulating layer IL4. In this way, the first electrode E1 can be connected to the transistor TR.

[0142] A fifth insulating layer IL5 can be disposed on the fourth insulating layer IL4, and an opening exposing a top surface of the first electrode E1 can be defined in the fifth insulating layer IL5. For example, the fifth insulating layer IL5 can include an organic material or an inorganic material.

[0143] A spacer SPC can be disposed on the fifth insulating layer IL5. For example, the spacer SPC can include an organic or inorganic material. The spacer SPC can maintain a gap between the encapsulation layer 300 and the substrate 100.

[0144] The spacer SPC can include a material different from that of the fifth insulating layer IL5. The spacer SPC can be formed after the fifth insulating layer IL5 is formed. However, embodiments according to the present disclosure are not limited thereto, and the spacer SPC can include the same material as that of the fifth insulating layer IL5. For example, the fifth insulating layer IL5 and the spacer SPC can include an organic material such as polyimide. In another embodiment, the fifth insulating layer IL5 and the spacer SPC can be formed simultaneously using a half-tone mask.

[0145] A light-emitting layer LEL can be disposed on the first electrode E1. The light-emitting layer LEL can be disposed in the opening formed in the fifth insulating layer IL5. As described herein, the light-emitting layer LEL can have a multi-layer structure including a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer, and an electron injection layer. The organic light-emitting layer can include a light-emitting material.

[0146] A second electrode E2 can cover the light-emitting layer LEL and can be disposed on the fifth insulating layer IL5 and the spacer SPC. In an embodiment, the second electrode E2 can have a plate shape. Further, the second electrode E2 can be transparent or reflective. For example, the second electrode E2 can include a metal.

[0147] The encapsulation layer 300 can be disposed on the light emitting device layer 220. The encapsulation layer 300 can inhibit or prevent moisture and oxygen from penetrating into the light emitting diode LD from the outside. For example, the encapsulation layer 300 can include a first inorganic encapsulation layer IEL1, an organic encapsulation layer OEL, and a second inorganic encapsulation layer IEL2.

[0148] The first inorganic encapsulation layer IEL1 can be disposed on the second electrode E2 along the profile of the second electrode E2 with substantially the same thickness. The organic encapsulation layer OEL can be disposed on the first inorganic encapsulation layer IEL1, and can have a substantially flat top surface and no step due to the first inorganic encapsulation layer IEL1. The second inorganic encapsulation layer IEL2 can be disposed on the organic encapsulation layer OEL.

[0149] The cover substrate 400 can be disposed on the encapsulation layer 300. For example, the cover substrate 400 can include a rigid glass or the like. For another example, the cover substrate 400 can include a flexible polymer resin. For a further example, the cover substrate 400 can be a film having a multi-layer structure. For example, the multi-layer structure can be a structure in which an organic film and an inorganic film are alternately arranged. However, the present disclosure is not limited thereto.

[0150] For example, the organic light emitting device included in the display device can be formed by an inkjet method. The inkjet method can include a process (e.g., a drying process and / or a curing process) for removing a solvent from the ink on the substrate 100. The process (e.g., the drying process and / or the curing process) can be performed by referring to the processing apparatus DE1 described in Figure 1 、 Figure 2 and Figure 3 .

[0151] As described herein, the processing apparatus DE1 can include a plurality of heaters HT disposed between the inner wall IW and the outer wall OW. Accordingly, the processing apparatus DE1 can remove foreign substances generated during the thin film formation by heating.

[0152] Further, the processing apparatus DE1 can further include a first remover EX1 disposed in the processing space PS of the vacuum chamber CH1. Accordingly, the processing apparatus DE1 can adsorb and remove foreign substances in a liquid form.

[0153] Further, the processing apparatus DE1 can be connected to a second remover EX2 disposed outside the vacuum chamber CH1, and can further include a connection tube CT passing through the inner wall IW and the outer wall OW of the vacuum chamber CH1. The connection tube CT can provide a path for moving a fluid from the processing space PS to the second remover EX2. Accordingly, the processing apparatus DE1 can exhaust foreign substances in a gaseous form.

[0154] Further, the plurality of heaters HT can include a first heater HT1 and a second heater HT2. The first heater HT1 can be disposed adjacent to the first side S1. The second heater HT2 can be disposed adjacent to the second side S2. A first heating amount Q1 of the first heater HT1 can be greater than a second heating amount Q2 of the second heater HT2. The fluid flow can be induced by the temperature difference. Accordingly, the foreign substance can be removed along the fluid flow due to the temperature difference.

[0155] The embodiments of the present disclosure should not be construed as limited to the present disclosure. Rather, the present disclosure provides an embodiment so that the present disclosure will be thorough and complete, and will fully convey the concept of the present disclosure to those skilled in the art.

[0156] While the present disclosure has been particularly shown and described with reference to embodiments thereof, it will be understood by those skilled in the art that various changes in form and details can be made therein without departing from the spirit or scope of the present disclosure as defined by the claims.

Claims

1. A processing apparatus for processing a substrate, the processing apparatus comprising: The processing apparatus includes: a vacuum chamber including a processing space including an inner wall disposed adjacent to the processing space and an outer wall disposed outside of the inner wall and spaced apart from the inner wall; and a plurality of heaters disposed between the inner wall and the outer wall.

2. The processing apparatus for processing a substrate according to claim 1, wherein, The processing apparatus further includes: a first remover disposed in the processing space of the vacuum chamber, wherein the first remover includes: a mesh grid; and a sorbent disposed in the mesh grid.

3. The processing apparatus for processing a substrate according to claim 2, wherein, The sorbent includes at least one of carbon and a porous material, and the first remover is configured to adsorb organic materials.

4. The processing apparatus for processing a substrate according to claim 2, wherein, The processing space is defined by a first side and a second side facing each other in a first direction, at least one sidewall extending between the first side and the second side, and a first remover is disposed in the vacuum chamber on each of the first side and the second side facing each other in the first direction.

5. The processing apparatus for processing a substrate according to claim 1, wherein, The processing space is defined by a first side and a second side facing each other in a first direction, a first sidewall and a second sidewall facing each other in a second direction intersecting the first direction, a third sidewall and a fourth sidewall facing each other in a third direction intersecting each of the first direction and the second direction, the plurality of heaters includes a first heater and a second heater, the first heater is disposed adjacent to the first side, the second heater is disposed adjacent to the second side, the first heater is configured to apply a first amount of heat, and the second heater is configured to apply a second amount of heat different from the first amount of heat.

6. The processing apparatus for processing a substrate according to claim 1, wherein, The processing apparatus further includes: a second remover disposed outside of the vacuum chamber; and a connection pipe connected to the second remover, passing through the outer wall and the inner wall of the vacuum chamber, and providing a path for fluid in the processing space to move from the processing space to the second remover.

7. The processing apparatus for processing a substrate according to claim 6, wherein, The processing space is defined by a first side and a second side facing each other in a first direction, at least one sidewall extending between the first side and the second side, the first side of the vacuum chamber is disposed above the second side, and the second remover is connected to the connection pipe adjacent to the second side.

8. The processing apparatus for processing a substrate according to any one of claims 1-3 and 6, wherein: the processing space is defined by a first side and a second side facing each other in a first direction, a first sidewall and a second sidewall facing each other in a second direction intersecting the first direction, a third sidewall and a fourth sidewall facing each other in a third direction intersecting each of the first direction and the second direction, wherein each of the first sidewall, the second sidewall, the third sidewall, and the fourth sidewall includes the inner wall and the outer wall, and wherein the processing apparatus further includes: a stage disposed in the processing space between the first side and the second side.

9. A processing apparatus for processing a substrate, the processing apparatus comprising: The processing apparatus includes: A vacuum chamber including a processing space defined by a first side and a second side facing each other in a first direction, and at least one sidewall extending between the first side and the second side, the at least one sidewall including an inner wall disposed adjacent to the processing space and an outer wall disposed outside of and spaced apart from the inner wall; and a plurality of heaters disposed between the inner wall and the outer wall and including a first heater disposed adjacent to the first side and a second heater disposed adjacent to the second side.

10. The processing apparatus for processing a substrate according to claim 9, wherein, The processing apparatus further includes: a first remover disposed in the vacuum chamber on each of the first side and the second side facing each other in the first direction; a second remover disposed outside of the vacuum chamber; and a connection pipe connected to the second remover, passing through the outer wall and the inner wall of the vacuum chamber.

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