Metal film processing system before wet etching

Abstract

The utility model relates to the technical field of semiconductor processing, and discloses a metal film processing system before wet etching, which comprises a liquid medicine chamber for soaking a quartz substrate, a spraying chamber for cleaning liquid medicine on the surface of the quartz substrate, a primary overflow chamber, a secondary overflow chamber and a drying chamber for drying the quartz substrate, and the conveying mechanism is used for transferring the quartz substrates to the chambers. When the system is adopted, the quartz substrate is cleaned in a mode of combining the spraying chamber, overflowing and quick discharging after being treated in the liquid medicine chamber, so that the problem that organic by-products stripped from the quartz substrate are cured under the action of air drying and are re-attached to the surface of the quartz substrate to cause metal residues in a subsequent wet etching process can be effectively prevented. The metal film processing of the quartz substrate can be efficiently, accurately and stably completed, the problem of metal residues after wet etching is solved, and the production efficiency and the quality of the quartz substrate are improved.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor processing technology, specifically to a metal thin film processing system before wet etching. Background Art

[0002] In the manufacture of quartz resonators, a hard mask method is typically used to form the desired pattern on the surface of the quartz substrate with high precision. However, in the development process before wet etching, the developer not only removes the adhesive layer that needs to be removed, but also leaves some development byproducts. The accumulation of these byproducts is particularly noticeable at the discontinuities on the quartz substrate. After drying, these byproducts form organic residues. Currently, most methods to address this problem involve repeating photolithography and etching multiple times to create the desired pattern.

[0003] The removal of residual development byproducts at the break points of quartz substrates can be achieved by repeated photolithography and etching. However, this method has poor stability and drawbacks such as time consumption and cost waste. Utility Model Content

[0004] The purpose of this invention is to provide a metal thin film treatment system before wet etching, so as to solve the problems mentioned in the prior art.

[0005] To achieve the above-mentioned utility model objectives, the technical solution adopted by this utility model is: a wet etching pre-metal thin film treatment system, including a chemical solution chamber for soaking a quartz substrate, a spray chamber, a primary overflow chamber, and a secondary overflow chamber for cleaning the surface of the quartz substrate, a drying chamber for drying the quartz substrate, and a conveying mechanism for transferring the quartz substrate to each chamber.

[0006] The liquid chamber is equipped with a liquid supply mechanism and a liquid discharge mechanism. The liquid chamber is also equipped with a projectile mechanism that moves the quartz substrate in the liquid. The projectile mechanism includes a first transmission mechanical arm and a bearing platform. The bearing platform is equipped with a basket for placing the quartz substrate. The bearing platform is pushed by the first transmission mechanical arm.

[0007] The liquid supplied by the liquid supply mechanism is a tetramethylammonium hydroxide solution.

[0008] The spray chamber includes a first water supply mechanism, a first drainage mechanism, and a spray device, wherein the first water supply mechanism is connected to the spray device.

[0009] The water spraying device includes several pipes, and several nozzles are provided on the pipes. The first water supply mechanism is connected to the pipes.

[0010] The primary overflow chamber is provided with a second water supply mechanism, a second drainage mechanism and a first overflow pool. The second water supply mechanism is connected to the first overflow pool, and the connection point between the second water supply mechanism and the first overflow pool is at the bottom of the first overflow pool. The bottom of the first overflow pool is provided with a first drainage valve, and the first drainage valve is provided with a first drainage booster pump.

[0011] The secondary overflow chamber is provided with a third water supply mechanism, a third drainage mechanism, and a second overflow pool. The third water supply mechanism is connected to the second overflow pool, and the connection point between the third water supply mechanism and the second overflow pool is at the bottom of the second overflow pool. The bottom of the second overflow pool is provided with a second drainage valve, and the drainage valve is provided with a second drainage booster pump.

[0012] Both the first overflow pool and the second overflow pool are equipped with acoustic vibration devices, which are either ultrasonic vibrators or megohmmeter vibrators.

[0013] The drying chamber is equipped with a dryer.

[0014] The transmission mechanism is a second transmission mechanical arm.

[0015] The liquid supply mechanism, liquid discharge mechanism, first transmission mechanical arm, second transmission mechanical arm, first water supply mechanism, first drainage mechanism, second water supply mechanism, second drainage mechanism, third water supply mechanism, third drainage mechanism, drainage valve, and drainage booster pump are all electrically connected to the controller, and the controller is communicatively connected to the operation panel.

[0016] The beneficial effects of this utility model are mainly reflected in:

[0017] When using this system, the quartz substrate is cleaned after treatment in the chemical chamber using a combination of spray chamber, overflow, and rapid drainage. This effectively prevents organic byproducts peeled off from the quartz substrate from solidifying under air drying and re-adhering to the substrate surface, causing metal residue in subsequent wet etching processes. This system can efficiently, accurately, and stably complete the metal thin film treatment of quartz substrates, solving the problem of metal residue after wet etching and improving production efficiency and quartz substrate quality. Attached Figure Description

[0018] Figure 1 This is a schematic diagram of the system of this utility model;

[0019] The components include: 1. Liquid chamber; 2. Spray chamber; 3. Primary overflow chamber; 4. Secondary overflow chamber; 5. Drying chamber; 6. Conveying mechanism; 7. Liquid supply mechanism; 8. Liquid drainage mechanism; 9. First transmission robotic arm; 10. Bearing platform; 11. Flower basket; 12. First water supply mechanism; 13. First drainage mechanism; 14. Spraying device; 15. Second water supply mechanism; 16. Second drainage mechanism; 17. First overflow pool; 18. Third water supply mechanism; 19. Third drainage mechanism; 20. Second overflow pool; 21. First drainage valve; 22. First drainage booster pump; 23. Acoustic vibration device; 24. Dryer; 25. Second drainage valve; 26. Second drainage booster pump. DETAILED DESCRIPTION

[0020] To make the objectives, technical solutions, and advantages of this application clearer, the technical solutions in the preferred embodiments of this application will be described in more detail below with reference to the accompanying drawings.

[0021] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, an indirect connection through an intermediate medium, or the internal communication between two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0022] In the description of this application, it should be understood that the terms "upper", "lower", "front", "back", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0023] Furthermore, the terms “comprising” and “having”, and any variations thereof, are intended to cover non-exclusive inclusion, such that a process, method, system, product, or display that includes a series of steps or units is not necessarily limited to those steps or units that are explicitly listed, but may include other steps or units that are not explicitly listed or that are inherent to such process, method, product, or display.

[0024] Please see Figure 1 This is a metal thin film processing system before wet etching, primarily used in the semiconductor field. It can also be applied to optoelectronics, biomedicine, precision instruments and measurement, aerospace, and other fields.

[0025] In this embodiment, the system includes a solution chamber 1 for soaking the quartz substrate, a spray chamber 2, a primary overflow chamber 3, and a secondary overflow chamber 4 for cleaning the surface of the quartz substrate, a drying chamber 5 for drying the quartz substrate, and a conveying mechanism 6 for transferring the quartz substrate to each chamber. When processing the quartz substrate, it sequentially passes through the solution chamber 1, the spray chamber 2, the primary overflow chamber 3, the secondary overflow chamber 4, and the drying chamber 5, thus completing the system operation. Of course, the spray chamber 2, the primary overflow chamber 3, and the secondary overflow chamber 4 can be used repeatedly, depending on the situation.

[0026] As a more specific implementation of this embodiment, the liquid chamber 1 is equipped with a liquid supply mechanism 7 and a liquid drainage mechanism 8. The liquid chamber 1 also includes a projectile mechanism for moving quartz substrates within the liquid solution. The projectile mechanism comprises a first transmission mechanical arm 9 and a support platform 10. The support platform 10 has a basket 11 for placing quartz substrates, and the support platform 10 is pushed by the first transmission mechanical arm 9. The quartz substrates are supported using a basket 11, commonly used in semiconductors. A certain number of quartz substrates are placed in the basket 11, with gaps between each substrate to facilitate cleaning and handling. The liquid supply mechanism 7 supplies a tetramethylammonium hydroxide solution. A specific concentration and temperature of tetramethylammonium hydroxide solution can be selected for immersion treatment of the quartz substrates to be treated. Under the action of the projectile mechanism, residual developer byproducts are removed.

[0027] As a more specific implementation of this embodiment, the spray chamber 2 includes a first water supply mechanism 12, a first drainage mechanism 13, and a spraying device 14, with the first water supply mechanism 12 connected to the spraying device 14. Specifically, the spraying device 14 includes several pipes, each with several nozzles. Each nozzle has multiple spray holes, and the orientation of the spray holes is at an angle of 0°-180° to the vertical angle of the nozzle, thereby increasing the spray angle. The first water supply mechanism 12 is connected to the pipes to provide water or chemical reagents. Spraying chemical reagents or pure water onto the quartz substrate, the flowing liquid effectively applies a driving force to the surface of the quartz substrate, cleaning away some of the substances to be cleaned.

[0028] As a more specific implementation of this embodiment, the primary overflow chamber 3 is equipped with a second water supply mechanism 15, a second drainage mechanism 16, and a first overflow pool 17. The second water supply mechanism 15 is connected to the first overflow pool 17, and the connection point between the second water supply mechanism 15 and the first overflow pool 17 is at the bottom of the first overflow pool 17. A first drainage valve 21 is provided at the bottom of the first overflow pool 17, and a first drainage booster pump 22 is provided inside the first drainage valve 21. The first overflow pool 17 has a recessed tank. First, pure water is injected into the tank from bottom to top. After the tank is full of pure water, water continues to be injected, causing the pure water to continuously overflow from the top of the tank. During the overflow process, substances with a density less than that of pure water will overflow from the top of the tank and be discharged from the tank, thus achieving the removal of low-density substances. Secondly, when the tank is filled with pure water, the first drain valve 21 at the bottom of the tank can quickly drain the pure water in the entire tank in a short time. During the draining process, substances with a density greater than that of pure water will be discharged from the bottom of the tank, thus achieving the removal of high-density substances.

[0029] As a more specific implementation of this embodiment, the secondary overflow chamber 4 is equipped with a third water supply mechanism 18, a third drainage mechanism 19, and a second overflow pool 20. The third water supply mechanism 18 is connected to the second overflow pool 20, and the connection point between the third water supply mechanism 18 and the second overflow pool 20 is at the bottom of the second overflow pool 20. A second drainage valve 25 is provided at the bottom of the second overflow pool 20, and a second drainage booster pump 26 is provided inside the drainage valve 25. The second overflow pool 20 also has a recessed tank. Similarly, pure water is first injected into the tank from bottom to top. After the tank is full of pure water, water continues to be injected, causing the pure water to continuously overflow from the top of the tank. During the overflow process, substances with a density less than that of pure water will overflow from the top of the tank and be discharged from the tank, thus achieving the removal of low-density substances. Secondly, when the tank is filled with pure water, the pure water in the entire tank is quickly drained in a short time through the second drain valve 25 at the bottom of the tank. During the draining process, substances with a density greater than that of pure water will be discharged from the bottom of the tank, thus achieving the removal of high-density substances.

[0030] Furthermore, the aforementioned water supply and drainage systems are conventional technical means and will not be elaborated upon further.

[0031] As a more specific implementation of this embodiment, both the first overflow tank 17 and the second overflow tank 20 are equipped with acoustic vibration devices 23, which are either ultrasonic vibrators or megasonite vibrators. Ultrasonic cleaning mainly generates cavitation, and due to the presence of pressure waves, tiny bubbles in the liquid rapidly burst, generating a large amount of energy, thereby removing particles from the surface of the quartz substrate. Megasonite cleaning, on the other hand, mainly achieves the cleaning purpose by impacting particles on the substrate surface with acoustic pressure waves. Regardless of the auxiliary method used, the particles removed from the substrate surface are discharged from the tank using a combination of overflow and rapid drainage to avoid secondary contamination of the substrate by pure water in the tank.

[0032] As a more specific implementation of this embodiment, the drying chamber 5 is equipped with a dryer 24 to complete the drying of the substrate. The dryer 24 is a conventional technical means and will not be described in detail.

[0033] In a more specific implementation of this embodiment, the conveying mechanism 6 is a second transmission robotic arm. The movement of the flower basket 11 and its quartz substrate between the chambers is achieved by transferring the flower basket 11 through the second transmission robotic arm.

[0034] As a more specific implementation of this embodiment, the liquid supply mechanism 7, the liquid discharge mechanism 8, the first transmission mechanical arm 9, the second transmission mechanical arm, the first water supply mechanism 12, the first drainage mechanism 13, the second water supply mechanism 15, the second drainage mechanism 16, the third water supply mechanism 18, the third drainage mechanism 19, the drainage valve 21, the drainage booster pump 22, and the dryer 24 are all electrically connected to the controller. The controller is communicatively connected to the operation panel, which can be a touch screen or other control panel. Through the operation panel, the cleaning operation can be realized to clean the substance to be cleaned.

[0035] The above description is only a preferred embodiment of the present utility model and is not intended to limit the present utility model. The patent protection scope of the present utility model shall be determined by the claims. Similarly, any equivalent structural changes made based on the description and drawings of the present utility model shall also be included within the protection scope of the present utility model.

Claims

1. A metal thin film treatment system before wet etching, characterized in that, It includes a liquid chamber for soaking quartz substrates, a spray chamber, a primary overflow chamber, and a secondary overflow chamber for cleaning the surface of quartz substrates, a drying chamber for drying quartz substrates, and a conveying mechanism for transferring quartz substrates to each chamber.

2. The metal thin film treatment system before wet etching according to claim 1, characterized in that, The liquid chamber is equipped with a liquid supply mechanism and a liquid discharge mechanism. The liquid chamber is also equipped with a projectile mechanism that moves the quartz substrate in the liquid. The projectile mechanism includes a first transmission mechanical arm and a bearing platform. The bearing platform is equipped with a basket for placing the quartz substrate. The bearing platform is pushed by the first transmission mechanical arm. The liquid supplied by the liquid supply mechanism is a tetramethylammonium hydroxide solution.

3. The metal thin film treatment system before wet etching according to claim 2, characterized in that, The spray chamber includes a first water supply mechanism, a first drainage mechanism, and a spray device, wherein the first water supply mechanism is connected to the spray device.

4. The metal thin film treatment system before wet etching according to claim 3, characterized in that, The water spraying device includes several pipes, and several nozzles are provided on the pipes. The first water supply mechanism is connected to the pipes.

5. A metal thin film treatment system before wet etching according to claim 4, characterized in that, The primary overflow chamber is provided with a second water supply mechanism, a second drainage mechanism and a first overflow pool. The second water supply mechanism is connected to the first overflow pool, and the connection point between the second water supply mechanism and the first overflow pool is at the bottom of the first overflow pool. The bottom of the first overflow pool is provided with a first drainage valve, and the first drainage valve is provided with a first drainage booster pump.

6. A metal thin film treatment system before wet etching according to claim 5, characterized in that, The secondary overflow chamber is provided with a third water supply mechanism, a third drainage mechanism, and a second overflow pool. The third water supply mechanism is connected to the second overflow pool, and the connection point between the third water supply mechanism and the second overflow pool is at the bottom of the second overflow pool. The bottom of the second overflow pool is provided with a second drainage valve, and the drainage valve is provided with a second drainage booster pump.

7. A metal thin film treatment system before wet etching according to claim 6, characterized in that, Both the first overflow pool and the second overflow pool are equipped with acoustic vibration devices, which are either ultrasonic vibrators or megohmmeter vibrators.

8. A metal thin film treatment system before wet etching according to claim 7, characterized in that, The drying chamber is equipped with a dryer.

9. A metal thin film treatment system before wet etching according to claim 8, characterized in that, The transmission mechanism is a second transmission robotic arm.

10. A metal thin film treatment system before wet etching according to claim 9, characterized in that, The liquid supply mechanism, liquid discharge mechanism, first transmission mechanical arm, second transmission mechanical arm, first water supply mechanism, first drainage mechanism, second water supply mechanism, second drainage mechanism, third water supply mechanism, third drainage mechanism, drainage valve, drainage booster pump and dryer are all electrically connected to the controller, and the controller is communicatively connected to the operation panel.

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