Water cooling screen for monocrystalline silicon growth device

Abstract

The utility model provides a water cooling screen for a monocrystalline silicon growth device, and belongs to the field of monocrystalline silicon material production equipment. The water cooling screen comprises a liquid inlet, a liquid outlet, an inner wall, an outer wall and an annular flow channel. The liquid inlet and the liquid outlet are respectively formed in the upper end of the water cooling screen, the liquid inlet is communicated with the bottommost layer of the annular flow channel, and the liquid outlet is communicated with the uppermost layer of the annular flow channel; the outer wall is of a thin-wall hollow structure, the hollow structure comprises an inner layer and an outer layer, and the outer layer and the inner layer are sealed at the end part to form an air interlayer; and the outer layer exposed side is a polishing layer / reflective layer. Meanwhile, the bottom face of the annular flow channel can be of the same hollow structure. According to the utility model, the absorption of heat on the outer side of the water-cooling screen is reduced, so that the heat loss of the silicon melt is weakened, the energy consumption is reduced, the production cost is reduced, and the production efficiency is improved.

Description

Technical Field

[0001] This utility model belongs to the field of monocrystalline silicon material production equipment, specifically relating to a water-cooled screen for monocrystalline silicon growth apparatus. Background Technology

[0002] The growth of single-crystal silicon generally requires an inert gas environment (primarily nitrogen and helium). Polycrystalline materials, such as polycrystalline silicon, are melted using a graphite heater. Based on the silicon melt and a seed crystal, a dislocation-free single crystal is grown using the Czochralski method. The equipment used for growing single-crystal silicon typically incorporates a water-cooled screen to cool the increased diameter of the single-crystal silicon. This measure significantly improves the temperature distribution of the single-crystal silicon rod, helping to optimize the thermal field, reduce energy consumption, and increase yield. However, during the growth of single-crystal silicon, it is crucial to maintain the state and temperature of the silicon melt. The introduction of the water-cooled screen must minimize its impact on the temperature of the silicon melt.

[0003] In existing technologies, the cooling and solidification of the silicon melt are generally prevented by modifying the shape of the lower port of the water-cooled screen. However, the introduction of the water-cooled screen will always cause the temperature of the silicon melt to drop to some extent. In order to maintain the state of the silicon melt, it is necessary to increase the heating power of the melt, which increases the production cost and is not conducive to thermal field optimization. Summary of the Invention

[0004] In view of the above-mentioned defects or deficiencies in the prior art, the present invention aims to provide a water-cooled screen for a single crystal silicon growth device. By designing the structure of the outer cladding layer at the lower end of the water-cooled screen as a thin-walled hollow layer, and the outermost layer being a polished / reflective layer, the absorption of heat on the outer side of the water-cooled screen is reduced, thereby weakening the heat loss of the silicon melt, reducing energy consumption, reducing production costs, and improving production efficiency.

[0005] To achieve the above objectives, the present invention adopts the following technical solution:

[0006] A water-cooled screen for a single-crystal silicon growth apparatus, the water-cooled screen comprising: an inlet 21, an outlet 22, an inner wall 23, an outer wall 24, and an annular flow channel 25; the inlet 21 and the outlet 22 are respectively disposed at the upper end of the water-cooled screen 20, the inlet 21 is connected to the bottommost flow channel of the annular flow channel 25, and the outlet 22 is connected to the topmost flow channel of the annular flow channel 25;

[0007] The outer wall 24 is a thin-walled hollow structure, which includes an inner outer wall layer 241 and an outer outer wall layer 242. The outer outer wall layer 242 and the inner outer wall layer 241 are sealed at their ends to form an outer wall air gap 243.

[0008] Preferably, the exposed side of the outer layer 242 of the outer wall is a polished layer / reflective layer.

[0009] Preferably, the inner surface 231 of the inner wall 23 has a structure that enhances turbulence and heat conduction.

[0010] Preferably, the enhanced turbulence and heat conduction structure is a U-shaped groove, and / or an irregular right-angled groove, and / or an arc-shaped groove.

[0011] Preferably, the bottom surface of the annular flow channel 25 is a thin-walled hollow structure, the hollow structure includes an inner bottom layer 251 and an outer bottom layer 252, the inner bottom layer 251 forms the inner side of the annular flow channel, the exposed side of the outer bottom layer 252 is a polished layer / reflective layer, and the outer bottom layer 252 and the inner bottom layer 251 are sealed at the ends to form an independent bottom air gap 253.

[0012] Preferably, the bottom surface of the annular flow channel 25 is a thin-walled hollow structure layer. The hollow structure includes an inner bottom layer 251 and an outer bottom layer 252. The inner bottom layer 251 forms the inner side of the annular flow channel, and the exposed side of the outer bottom layer 252 is a polished / reflective layer. The inner bottom layer 251 is connected to the inner outer wall layer 241, and the outer bottom layer 252 is connected to the outer outer wall layer 242, forming a hollow structure that is connected with the outer wall air gap layer 243.

[0013] The technical solution provided by this utility model embodiment has the following beneficial effects:

[0014] The water-cooled screen for a single-crystal silicon growth apparatus provided in this embodiment includes: an inlet 21, an outlet 22, an inner wall 23, an outer wall 24, and an annular flow channel 25. The inlet 21 and outlet 22 are respectively located at the upper end of the water-cooled screen 20. The inlet 21 is connected to the bottommost flow channel of the annular flow channel 25, and the outlet 22 is connected to the topmost flow channel of the annular flow channel 25. The outer wall 24 is a thin-walled hollow structure, which includes an inner layer 241 and an outer layer 242. The inner layer 241 is perpendicularly tangent to the annular flow channel 25, and the outer layer 242 and the inner layer 241 are sealed at their ends to form an air gap 243. The exposed side of the outer layer 242 is a polished / reflective layer. The bottom surface of the annular flow channel 25 can also be configured with the same hollow structure. This invention reduces the absorption of heat from the outside of the water-cooled screen, thereby reducing heat loss from the silicon melt, lowering energy consumption, reducing production costs, and improving production efficiency.

[0015] Of course, implementing any product or method of this utility model does not necessarily require achieving all of the advantages described above at the same time. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in the embodiments of this utility model, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1 This is a schematic diagram of the structure of the water-cooled screen used in the single-crystal silicon growth apparatus according to an embodiment of the present invention;

[0018] Figure 2 This is an embodiment of the present utility model. Figure 1 Enlarged view of part A;

[0019] Figure 3 This is an embodiment of the present utility model. Figure 1 Enlarged view of part B;

[0020] Figure 4 This is an enlarged schematic diagram of the inner surface structure of the inner wall facing the cavity in an embodiment of this utility model.

[0021] Explanation of reference numerals in the attached figures:

[0022] 10-Single crystal furnace; 20-Water-cooled screen; 21-Liquid inlet; 22-Liquid outlet; 23-Inner wall; 231-Inner side of inner wall; 24-Outer wall; 241-Inner layer of outer wall; 242-Outer layer of outer wall; 243-Air barrier of outer wall; 25-Annular flow channel; 251-Inner layer of bottom surface; 252-Outer layer of bottom surface; 253-Air barrier of bottom surface; 30-Heat shield; 40-Single crystal silicon rod; 50-Silicon liquid; 60-Crucible. Detailed Implementation

[0023] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only a part of the embodiments of the present utility model, and not all of them. The components of the embodiments of the present utility model described and shown in the accompanying drawings can generally be arranged and designed in various different configurations. It should be noted that, without conflict, the embodiments and features in the embodiments of the present utility model can also be combined with each other.

[0024] It should be noted that similar reference numerals and letters in the following figures indicate similar items; therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures. In the description of this utility model, the terms "first," "second," "third," "fourth," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0025] See appendix Figure 1-4This utility model provides a water-cooled screen for a single-crystal silicon growth apparatus. The single-crystal silicon growth apparatus includes a single-crystal furnace body 10, a crucible 60, a hot screen 30, and a water-cooled screen 20. The crucible 60, hot screen 30, and water-cooled screen 20 are arranged sequentially from the outside to the inside of the furnace body, and all are rotating bodies. The bottom surface of the water-cooled screen protrudes from the bottom of the hot screen and maintains a predetermined distance from the surface of the molten silicon 50. The water-cooled screen 20 includes an inlet 21, an outlet 22, an inner wall 23, an outer wall 24, and an annular flow channel 25. Coolant flows in through the inlet 21, flows along the annular flow channel, and flows out through the outlet 22. The liquid inlet 21 and the liquid outlet 22 are respectively located at the upper end of the water-cooled screen 20. The liquid inlet 21 is connected to the bottom layer of the annular flow channel 25, and the liquid outlet 22 is connected to the top layer of the annular flow channel 25, so that the water flowing in from the liquid inlet 21 flows from bottom to top along the annular flow channel 25 and flows out to the liquid outlet 22.

[0026] like Figure 2 As shown, the outer wall 24 is a thin-walled hollow structure. The hollow structure includes an inner outer wall layer 241 and an outer outer wall layer 242. The exposed side of the outer outer wall layer 242 is a polished / reflective layer. The outer outer wall layer 242 and the inner outer wall layer 241 are sealed at the ends to form an outer wall air gap 243.

[0027] like Figure 3 As shown, the bottom surface of the annular flow channel 25 is also a thin-walled hollow structure, similar to the outer wall. The hollow structure includes an inner bottom layer 251 and an outer bottom layer 252. The inner bottom layer 251 forms the inner side of the annular flow channel, and the exposed side of the outer bottom layer 252 is a polished / reflective layer. A hollow bottom air gap 253 is formed between the inner bottom layer 251 and the outer bottom layer 252. The bottom air gap 253 has two structural configurations: the outer bottom layer 252 and the inner bottom layer 251 are sealed at their ends to form a separate hollow structure; or, the inner bottom layer 251 is connected to the inner outer wall layer 241, and the outer bottom layer 252 is connected to the outer outer wall layer 242, forming a connected hollow structure with the outer wall air gap 243. In this embodiment, the formation of an independent hollow structure is used as an example for explanation.

[0028] The hollow structure forms air gaps 243 / 253. Through the inner layer 241 / 251, the air gaps 243 / 253, and the outer layer 242 / 252, the cold energy of the liquid in the annular flow channel can be better prevented from flowing to the outside, thus avoiding affecting the temperature of the silicon melt. At the same time, the exposed layer of the outer layer 242 / 252 is a polished / reflective layer, which reduces the absorption of heat from the outside of the water-cooled screen, thereby reducing the heat loss of the silicon melt, reducing the heating power of the silicon melt, and lowering production costs.

[0029] like Figure 4As shown, the inner surface 231 of the inner wall 23 has a turbulent flow and heat conduction structure. The turbulent flow and heat conduction structure can be a U-shaped groove, an irregular right-angled groove, or an arc-shaped groove.

[0030] When the water-cooled screen is applied to a single-crystal silicon growth apparatus to produce single-crystal silicon, the crystal rod 40 is arranged inside the single-crystal furnace 10, and the water-cooled screen 20 uses the coolant flowing in the cavity to cool the crystal rod 40. The outer wall 24 of the water-cooled screen 20 adopts a hollow structure, forming a three-layer structure of inner layer 241, air isolation layer 243, and outer layer 242, thereby better preventing the internal liquid cooling from diffusing into the silicon melt; at the same time, the surface of the silicon melt emits thermal radiation. Since the bottom of the water-cooled screen has a certain inward tilt angle and is also a hollow structure, it can increase the reflection of the water-cooled screen surface to the silicon melt surface. The exposed side of the outer layer adopts a polished / reflective layer to reduce the absorption of heat on the outside of the water-cooled screen, thereby reducing the heat loss of the silicon melt and reducing production costs.

[0031] The above description is merely a preferred embodiment of the present utility model and an explanation of the technical principles employed, and is not intended to limit the scope of the claimed utility model, but merely to illustrate preferred embodiments of the present utility model. Those skilled in the art should understand that the scope of the present utility model is not limited to the specific combination of the above-described technical features, but should also cover other technical solutions formed by any combination of the above-described technical features or their equivalents without departing from the inventive concept. All other embodiments obtained by those skilled in the art based on the embodiments of the present utility model without inventive effort are within the scope of protection of the present utility model.

Claims

1. A water-cooled screen for a single-crystal silicon growth apparatus, characterized in that, The water-cooled screen includes: an inlet (21), an outlet (22), an inner wall (23), an outer wall (24), and an annular flow channel (25); the inlet (21) and the outlet (22) are respectively located at the upper end of the water-cooled screen (20), the inlet (21) is connected to the bottommost flow channel of the annular flow channel (25), and the outlet (22) is connected to the topmost flow channel of the annular flow channel (25); The outer wall (24) is a thin-walled hollow structure, which includes an inner outer wall layer (241) and an outer outer wall layer (242). The outer outer wall layer (242) and the inner outer wall layer (241) are sealed at the ends to form an outer wall air gap (243).

2. The water-cooled screen for a single-crystal silicon growth apparatus according to claim 1, characterized in that, The exposed side of the outer wall (242) is a polished / reflective layer.

3. The water-cooled screen for a single-crystal silicon growth apparatus according to claim 1, characterized in that, The inner surface (231) of the inner wall (23) has a structure that enhances turbulence and heat conduction.

4. The water-cooled screen for a single-crystal silicon growth apparatus according to claim 3, characterized in that, The enhanced turbulence and heat conduction structure is a U-shaped groove and / or an arc-shaped groove.

5. The water-cooled screen for a single-crystal silicon growth apparatus according to claim 1, characterized in that, The bottom surface of the annular flow channel (25) is a thin-walled hollow structure. The hollow structure includes an inner bottom layer (251) and an outer bottom layer (252). The inner bottom layer (251) forms the inner side of the annular flow channel. The exposed side of the outer bottom layer (252) is a polished / reflective layer. The outer bottom layer (252) and the inner bottom layer (251) are sealed at the ends to form an independent bottom air gap (253).

6. The water-cooled screen for a single-crystal silicon growth apparatus according to claim 1, characterized in that, The bottom surface of the annular flow channel (25) is a thin-walled hollow structure layer. The hollow structure includes an inner bottom layer (251) and an outer bottom layer (252). The inner bottom layer (251) forms the inner side of the annular flow channel. The exposed side of the outer bottom layer (252) is a polished / reflective layer. The inner bottom layer (251) is connected to the inner outer wall layer (241), and the outer bottom layer (252) is connected to the outer outer wall layer (242), forming a hollow structure that is connected with the outer wall air gap layer (243).

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