Power device unit and power electronic assembly including the same

Abstract

The utility model relates to a power device unit and a power electronic assembly including the same. The power device unit includes: a metal body having a first main surface, a second main surface opposite the first main surface, and a side surface extending vertically between the first main surface and the second main surface; a vertical power semiconductor die in a recess formed in the first main surface of the metal body; and an organic and / or glass electrical insulator covering the second main surface of the metal body such that the power device unit is electrically insulated at least at the first side comprising the organic and / or glass electrical insulator. The organic and / or glass electrical insulator is confined to the metal body. The back side of the vertical power semiconductor die is configured to be at a different potential than the front side of the vertical power semiconductor die. The metal body is at the same potential as the backside of the vertical power semiconductor die.

Description

Technical Field

[0001] This disclosure relates to a power device unit and a power electronic assembly including the power device unit. Background Technology

[0002] For high-voltage applications utilizing vertical power semiconductor devices (e.g., vertical power transistors), the back side of the power semiconductor device must be electrically insulated from the heat sink because the back side is electrically active. For example, in a power device cell, the back side of the power device cell is electrically connected to the back side of the power semiconductor die and is therefore at the same potential as the back side of the die. When embedded in a PCB (printed circuit board), a laminate must be introduced during the PCB manufacturing process to electrically isolate the back side of the power device cell from the metallization of the PCB. However, standard laminates used in PCB manufacturing have low thermal conductivity (~0.65 K / W), which limits heat dissipation losses from the die and restricts the overall performance of the die. More expensive laminates (~6.5 K / W) can be used, but at the cost of higher costs, and these laminates are typically introduced over the entire area of ​​the PCB, making high-performance electrical insulation too expensive for most applications. Furthermore, the continuous laminate between the electrically active portion and the heat sink limits heat dissipation. The conventional approach to overcoming this limitation involves drilling through-holes through the laminate where electrical isolation is not required, which doubles the cost: the cost of the laminate material where it is not required, and the cost of drilling the through-holes and filling them with a conductive material (usually copper).

[0003] Therefore, an improved power device unit design is needed. Summary of the Invention

[0004] According to an embodiment of the power device unit, the power device unit includes: a metal body having a first main surface, a second main surface opposite to the first main surface, and a side surface extending vertically between the first main surface and the second main surface; a vertical power semiconductor die in a recess formed in the first main surface of the metal body; and an organic and / or glass electrical insulator covering the second main surface of the metal body such that the power device unit is electrically insulated at least at the first side including the organic and / or glass electrical insulator, wherein the organic and / or glass electrical insulator is confined to the metal body, wherein the back side of the vertical power semiconductor die is configured to be at a different potential than the front side of the vertical power semiconductor die, and wherein the metal body is at the same potential as the back side of the vertical power semiconductor die.

[0005] According to an embodiment of a power electronic component, the power electronic component includes: a printed circuit board; and a power device unit embedded in the printed circuit board, wherein the power device unit includes: a metal body having a first main surface, a second main surface opposite to the first main surface, and a side extending vertically between the first main surface and the second main surface; a vertical power semiconductor die in a recess formed in the first main surface of the metal body; and an organic and / or glass electrical insulator covering the second main surface of the metal body such that the power device unit is electrically insulated at least at the first side including the organic and / or glass electrical insulator, wherein the organic and / or glass electrical insulator is confined to the metal body, wherein the back side of the vertical power semiconductor die is configured to be at a different potential than the front side of the vertical power semiconductor die, and wherein the metal body is at the same potential as the back side of the vertical power semiconductor die.

[0006] According to another embodiment of the power electronic assembly, the power electronic assembly includes: a metal frame; and a power device unit mounted to the metal frame, wherein the power device unit includes: a metal body having a first main surface, a second main surface opposite to the first main surface, and a side extending vertically between the first main surface and the second main surface; a vertical power semiconductor die in a recess formed in the first main surface of the metal body; and an organic and / or glass electrical insulator covering the second main surface of the metal body such that the power device unit is electrically insulated at least on the first side including the organic and / or glass electrical insulator, wherein the organic and / or glass electrical insulator is confined to the metal body, wherein the back side of the vertical power semiconductor die is configured to be at a different potential than the front side of the vertical power semiconductor die, and wherein the metal body is at the same potential as the back side of the vertical power semiconductor die.

[0007] Those skilled in the art will recognize additional features and advantages when reading the following detailed description and viewing the accompanying drawings. Attached Figure Description

[0008] The elements in the accompanying drawings are not necessarily drawn to scale relative to each other. Similar reference numerals denote corresponding similar parts. Features of various illustrated embodiments can be combined unless they are mutually exclusive. Embodiments are shown in the accompanying drawings, and the embodiments are described in detail below.

[0009] Figure 1 A cross-sectional view of an embodiment of the power device unit is shown.

[0010] Figure 2 A cross-sectional view of a power device unit according to another embodiment is shown.

[0011] Figure 3 A cross-sectional view of a power device unit according to another embodiment is shown.

[0012] Figure 4 A cross-sectional view of a power device unit according to another embodiment is shown.

[0013] Figure 5 A cross-sectional view of the organic and / or glass electrical insulator of the power device cell according to an embodiment is shown.

[0014] Figure 6 A cross-sectional view of a power electronic assembly is shown, including a printed circuit board (PCB) and power device units embedded in the PCB.

[0015] Figure 7 A cross-sectional view of a power electronic assembly including power device units according to another embodiment is shown. Detailed Implementation

[0016] The embodiments described herein provide power device cells designed for high-voltage applications (e.g., 20V to 1200V or higher) and / or high-current applications (e.g., one ampere or several amperes to hundreds of amperes or more). The power device cell includes a vertical power semiconductor die, such as a vertical power transistor die or a vertical power diode die, disposed in a recess formed in a first main surface of a metal body. An organic and / or glass electrical insulator covers the opposite (second) main surface of the metal body such that the power device cell is electrically insulated at least on the first side including the organic and / or glass electrical insulator, wherein the organic and / or glass electrical insulator is confined to the metal body. The back side of the vertical power semiconductor die is configured to be at a different potential than the front side of the die, and the metal body is at the same potential as the back side of the vertical power semiconductor die.

[0017] The organic and / or glass electrical insulator of the power device unit can be directly attached to the back of the metal body or its support. One side of the organic and / or glass electrical insulator can be coated with a conductive and / or thermally conductive layer or foil, such as an adhesive layer between the insulator and the conductive layer, and / or between the metal layer of the device unit and the semiconductor die and / or its support, and / or between the metal layer and the cooling support. Both sides of the organic and / or glass electrical insulator can be coated with conductive and / or thermally conductive layers or foil, such as an adhesive layer between the strip and the conductive layer, and / or between the metal layer of the device unit and the semiconductor die and / or its support, and / or between the metal layer and the cooling support.

[0018] The power device cell design described in this paper provides a low-cost alternative to standard power device cells. Assembly processes used to manufacture vertical power semiconductor dies can be used to form organic and / or glass electrical insulators, providing further cost savings. Low-cost and productive embedding of the power device cell into supports such as PCBs is achieved by eliminating the need to manufacture separate laminates during PCB (printed circuit board) manufacturing. Good thermal and mechanical adhesion between the power device cell and the support can be achieved via metal-to-metal junctions.

[0019] The following description, with reference to the accompanying drawings, outlines exemplary embodiments of power device cell designs and power electronic components utilizing power device cell designs. Unless otherwise explicitly stated, any power device cell embodiments described herein are interchangeable.

[0020] Figure 1 A cross-sectional view of an embodiment of the power device unit 100 is shown. The power device unit 100 includes a metal body 102 having a first main surface 104, a second main surface 106 opposite to the first main surface 104, and a side surface 108 extending vertically between the first main surface 104 and the second main surface 106. A vertical power semiconductor die 110 is disposed in a recess 112 formed in the first main surface 104 of the metal body 102.

[0021] In one embodiment, the metal body 102 is a Cu (copper) block. Other types of metal blocks can be used as the metal body 102, such as an Al (aluminum) block. The recess 112 can be formed in the first main surface 104 of the metal body 102 by stamping, embossing, etching, etc. The dimensions of the recess 112 are determined to accommodate a vertical power semiconductor die 110.

[0022] The vertical power semiconductor die 110 is designed for high-voltage applications (e.g., 20V to 1200V or higher) and / or high-current applications (e.g., one ampere or several amperes to hundreds of amperes or more). The back side 114 of the vertical power semiconductor die 110 is configured to be at a different potential than the front side 116 of the vertical power semiconductor die 110. For example, the vertical power semiconductor die 110 may be a vertical power diode die having an anode terminal at the front side 116 and a cathode terminal at the back side 114.

[0023] In another embodiment, the vertical power semiconductor die 110 may be a vertical power transistor die having one load terminal at the front side 116 and another load terminal at the back side 114. For example, in the case of a Si (silicon) or SiC (silicon carbide) vertical power MISFET (metal-insulator-semiconductor field-effect transistor), the source terminal and one or more additional terminals (e.g., gate terminal, one or more sensing terminals, etc.) may be at the front side 116, and the drain terminal may be at the back side 114. In the case of an IGBT (insulated-gate bipolar transistor), the emitter terminal and one or more additional terminals (e.g., gate terminal, one or more sensing terminals, etc.) may be at the front side 116, and the collector terminal may be at the back side 114. Other types of vertical power devices may be included in the vertical power semiconductor die 110.

[0024] The back surface 114 of the vertical power semiconductor die 110 is electrically connected to the metal body 102, for example, through conductive die attachment material or joints 118 (e.g., solder, conductive adhesive, sintered joints, diffusion solder joints, brazing joints, etc.). Since the back surface 114 of the vertical power semiconductor die 110 is electrically connected to the metal body 102, the metal body 102 is at the same potential as the back surface 114 of the vertical power semiconductor die 110 at the first main surface 104 and the second main surface 106 of the metal body 102. Therefore, all electrical connections to the vertical power semiconductor die 110 are accessible at the front surface 104 of the power device unit 100. As used herein, the phrase "same potential" is intended to include a small potential drop across the thickness of the metal body 102, which is certainly not a perfect conductor. Therefore, the potentials at the two main surfaces 104, 106 of the metal body 102 are considered to be the same herein.

[0025] The front surface 116 of the vertical power semiconductor die 110 can be coplanar with the first main surface 104 of the metal body 102, for example, as Figure 1 As shown. The front side 116 of the vertical power semiconductor die 110 may alternatively be located in a plane that is different (higher or lower) from the first main surface 104 of the metal body 102.

[0026] In each case, the power device unit 100 further includes an organic and / or glass electrical insulator 120 covering a second main surface 106 of the metal body 102, such that the power device unit 100 is electrically insulated at least on the first side including the organic and / or glass electrical insulator 120. The organic and / or glass electrical insulator 120 is confined to the metal body 102. That is, the organic and / or glass electrical insulator 120 is limited by the size and shape of the metal body 102. Figure 1In this embodiment, the organic and / or glass electrical insulator 120 is confined to the second main surface 106 of the metal body 102. The organic and / or glass electrical insulator 120 has the same area as the second main surface 106 of the metal body 102 and defines the electrically insulating side of the power device unit 100; however, the area of ​​the organic and / or glass electrical insulator 120 may also be smaller.

[0027] In one embodiment, the organic and / or glass electrical insulator 120 is part of a foil or strip applied to the second primary surface 106 of the metal body 102. For example, the foil or strip may be laminated or glued to the second primary surface 106 of the metal body 102. In another embodiment, the organic and / or glass electrical insulator 120 is a resist, adhesive, or wax coated on the second primary surface 106 of the metal body 102. In another embodiment, the organic and / or glass electrical insulator 120 comprises plastic. In yet another embodiment, the organic and / or glass electrical insulator 120 is glass cloth.

[0028] Individually or in combination, the organic and / or glass electrical insulator 120 can withstand temperatures of at least 100°C, 150°C, 175°C, 200°C, 225°C or higher, and has a high breakdown voltage of at least 50V to 10kV or higher.

[0029] Individually or in combination, the organic and / or glass electrical insulator 120 may have a thickness T_org ranging from 5 mm to 0.01 mm (e.g., 2 mm to 0.05 mm).

[0030] Individually or in combination, the power device cell 100 may have a thickness tolerance of + / - 100 micrometers (μm), including the thickness tolerance of the organic and / or glass electrical insulator 120. That is, in some embodiments, the variation in the thickness T_cell of the power device cell 100 may not exceed + / - 100 μm.

[0031] Figure 2 A cross-sectional view of a power device unit 100 according to another embodiment is shown. Figure 2 In the metal body 102, an organic and / or glass electrical insulator 120 extends to the side 108 of the metal body 102.

[0032] Figure 3 A cross-sectional view of a power device unit 100 according to another embodiment is shown. Figure 3 In this process, the organic and / or glass electrical insulator 120 further extends onto the first main surface 104 of the metal body 102. This can be achieved by forming openings in the portion of the organic and / or glass electrical insulator 120 covering the first main surface 104 of the metal body 102. Figure 3(Not shown in the diagram) and the openings are filled with a conductive material such as Cu to achieve electrical contact with each terminal at the first main surface 104 of the metal body 102 and the front side 116 of the vertical power semiconductor die 110. The conductive material can be patterned to ensure that the different potentials of the power device unit 100 remain separated.

[0033] Figure 4 A cross-sectional view of a power device unit 100 according to another embodiment is shown. Figure 4 In this configuration, the power device unit 100 further includes a metal layer 200 covering one side 202 of the organic and / or glass electrical insulator 120 opposite to the metal body 102. For example, the metal layer 200 may be a Cu layer. The metal layer 200 enables the device power unit 100 to be integrated with a support for the device power unit 100. Figure 4 The metal-to-metal junction (not shown) provides enhanced thermal and mechanical adhesion between the power device unit 100 and the support.

[0034] Figure 5 A cross-sectional view of the organic and / or glass electrical insulator 120 of the power device unit 100 according to an embodiment is shown. Figure 5 In this structure, the organic and / or glass electrical insulator 120 is a glass cloth 300 as part of a laminate. The laminate also includes an aluminum foil 302 between the glass cloth 300 and a second main surface 106 of the metal body 102. The laminate also includes an adhesive 304 (e.g., silicone adhesive) applied to the side 306 of the glass cloth 300 opposite to the aluminum foil 302 and a release liner 308 applied to the side 310 of the adhesive 304 opposite to the glass cloth 300.

[0035] Figure 6 A cross-sectional view of a power electronics assembly 400 is shown, which includes a printed circuit board (PCB) 402 serving as a support for a power device unit 100. According to this embodiment, the power device unit 100 is embedded in the PCB 402. The power electronics assembly 400 can form part of a power electronic circuit for use in various power applications, such as DC / AC inverters, DC / DC converters, AC / DC converters, DC / AC converters, AC / AC converters, multiphase inverters, H-bridges, traction inverters, onboard chargers, etc.

[0036] The laminate structure 404 of PCB 402 covers the organic and / or glass electrical insulator 120 of the power device unit 100. Heat dissipation occurs laterally to the laminate structure 404 of PCB 402 via the side 108 of the power device unit 100, such as... Figure 6As indicated by the arrow marked "1" in the diagram. Because the organic and / or glass electrical insulator 120 is confined to the metal body 102 of the power device cell 100, the organic and / or glass electrical insulator 120 exists only adjacent to the vertical power semiconductor die 110, that is, only adjacent to the area of ​​the PCB 402 exposed to high voltage during operation. Therefore, the power device cell 100 allows for improved heat dissipation and reduced thickness of the PCB 402, as the PCB 402 does not require additional laminates for electrically insulating the power device cell 100.

[0037] The laminated structure 404 of PCB 402 includes one or more conductive (rewiring) layers 406 and one or more electrically insulating layers 408. For example, the one or more electrically insulating layers 408 may include FR-4, which is a common dielectric material used in PCBs, and the one or more conductive layers 406 may be Cu layers. If PCB 402 includes more than one conductive layer 406, conductive layer vias 410 (e.g., Cu vias) interconnect the conductive layers 406 to form a multilayer PCB.

[0038] Similarly, Figure 6 As shown, the power device unit 100 may include a metal layer 200 that covers one side 202 of the organic and / or glass electrical insulator 120 opposite to the metal body 102 of the device unit 100. According to this embodiment, the metal layer 200 of the power device unit 100 is attached to the metal layer 406 of the PCB via a die attachment material or a bonding portion 412 (e.g., solder, conductive adhesive, etc.).

[0039] Figure 7 A cross-sectional view of a power electronics assembly 500 including a power device unit 100 according to another embodiment is shown. The power electronics assembly 500 can form part of a power electronic circuit for use in various power applications, such as DC / AC inverters, DC / DC converters, AC / DC converters, DC / AC converters, AC / AC converters, multiphase inverters, H-bridges, traction inverters, onboard chargers, etc.

[0040] exist Figure 7 In this configuration, the power device unit 100 is mounted to the metal frame 502. The metal frame 502 supporting the power device unit 100 can be formed by stamping, punching, etching, etc. In one embodiment, the metal frame 502 is a lead frame (e.g., copper, copper alloy, iron-nickel alloy, etc.).

[0041] Similarly, Figure 7As shown, the power device unit 100 may include a metal layer 200 covering one side 202 of the organic and / or glass electrical insulator 120 opposite to the metal body 102 of the power device unit 100. According to this embodiment, the metal layer 200 of the power device unit 100 is attached to the metal frame 502 supporting the power device unit 100 via a die attachment material or joint 504 (e.g., solder, conductive adhesive, sintered joint, diffusion solder joint, brazing joint, etc.).

[0042] Although this disclosure is not limited thereto, the examples numbered below illustrate one or more aspects of this disclosure.

[0043] Example 1: A power device cell includes: a metal body having a first main surface, a second main surface opposite to the first main surface, and a side surface extending vertically between the first main surface and the second main surface; a vertical power semiconductor die in a recess formed in the first main surface of the metal body; and an organic and / or glass electrical insulator covering the second main surface of the metal body such that the power device cell is electrically insulated at least at the first side including the organic and / or glass electrical insulator, wherein the organic and / or glass electrical insulator is confined to the metal body, wherein the back side of the vertical power semiconductor die is configured to be at a different potential than the front side of the vertical power semiconductor die, wherein the metal body is at the same potential as the back side of the vertical power semiconductor die.

[0044] Example 2. The power device unit according to Example 1, wherein an organic and / or glass electrical insulator is part of a foil or strip applied to a second primary surface of a metal body.

[0045] Example 3. The power device unit according to Example 1, wherein the organic and / or glass electrical insulator is a resist, adhesive or wax coated on the second primary surface of the metal body.

[0046] Example 4. The power device unit according to Example 1, wherein the organic and / or glass electrical insulator includes plastic.

[0047] Example 5. The power device unit according to Example 1, wherein the organic and / or glass electrical insulator is glass cloth.

[0048] Example 6. The power device unit according to Example 5, wherein the glass cloth is part of a stacked body, the stacked body further comprising an aluminum foil between the glass cloth and a second main surface of a metal body, an adhesive applied to the side of the glass cloth opposite to the aluminum foil, and a liner applied to the side of the adhesive opposite to the glass cloth.

[0049] Example 7. A power device cell according to any one of Examples 1 to 6, wherein the organic and / or glass electrical insulator has the same area as the second main surface of the metal body.

[0050] Example 8. A power device unit according to any one of Examples 1 to 6, wherein an organic and / or glass electrical insulator extends onto the side of the metal body.

[0051] Example 9. The power device cell according to Example 8, wherein an organic and / or glass electrical insulator further extends to the first main surface of the metal body.

[0052] Example 10. A power device unit according to any one of Examples 1 to 9, wherein the organic and / or glass electrical insulator has a thickness in the range of 5 mm to 0.01 mm.

[0053] Example 11. The power device unit according to Example 10, wherein the thickness of the organic and / or glass electrical insulator is in the range of 2 mm to 0.05 mm.

[0054] Example 12. A power device unit according to any one of Examples 1 to 10, wherein the power device unit has a thickness tolerance of + / - 100 micrometers, including the thickness tolerance of organic and / or glass electrical insulators.

[0055] Example 13. The power device unit according to any one of Examples 1 to 11 further includes a metal layer covering the side of the organic and / or glass electrical insulator opposite to the metal body.

[0056] Example 14. A power electronic component comprising: a printed circuit board; and a power device unit embedded in the printed circuit board, wherein the power device unit includes: a metal body having a first main surface, a second main surface opposite to the first main surface, and a side extending perpendicularly between the first main surface and the second main surface; a vertical power semiconductor die in a recess formed in the first main surface of the metal body; and an organic and / or glass electrical insulator covering the second main surface of the metal body such that the power device unit is electrically insulated at least on the first side including the organic and / or glass electrical insulator, wherein the organic and / or glass electrical insulator is confined to the metal body, wherein the back side of the vertical power semiconductor die is configured to be at a different potential than the front side of the vertical power semiconductor die, wherein the metal body is at the same potential as the back side of the vertical power semiconductor die.

[0057] Example 15. The power electronic assembly according to Example 14, wherein the power device unit further includes a metal layer covering the side of the organic and / or glass electrical insulator opposite to the metal body, and wherein the metal layer of the power device unit is attached to the metal layer of the printed circuit board.

[0058] Example 16. A power electronic assembly according to Example 14 or 15, wherein the laminated structure of the printed circuit board covers the organic and / or glass electrical insulator of the power device unit, and wherein the laminated structure of the printed circuit board includes one or more conductive layers and one or more electrical insulating layers.

[0059] Example 17. A power electronic component comprising: a metal frame; and a power device unit mounted to the metal frame, wherein the power device unit includes: a metal body having a first main surface, a second main surface opposite to the first main surface, and a side extending perpendicularly between the first main surface and the second main surface; a vertical power semiconductor die in a recess formed in the first main surface of the metal body; and an organic and / or glass electrical insulator covering the second main surface of the metal body such that the power device unit is electrically insulated at least on the first side including the organic and / or glass electrical insulator, wherein the organic and / or glass electrical insulator is confined to the metal body, wherein the back side of the vertical power semiconductor die is configured to be at a different potential than the front side of the vertical power semiconductor die, wherein the metal body is at the same potential as the back side of the vertical power semiconductor die.

[0060] Example 18. The power electronic assembly according to Example 17, wherein the power device unit further includes a metal layer covering the side of the organic and / or glass electrical insulator opposite to the metal body, and wherein the metal layer of the power device unit is attached to the metal frame.

[0061] Terms such as "first" and "second" are used to describe various elements, regions, parts, etc., and are not intended to be limiting. Throughout the specification, similar terms refer to similar elements.

[0062] As used herein, the terms “having,” “containing,” “including,” “comprising,” etc., are open-ended terms that indicate the presence of the stated element or feature but do not exclude additional elements or features. Unless the context clearly indicates otherwise, the articles “a,” “an,” and “the” are intended to include both plural and singular forms.

[0063] Unless otherwise expressly stated, the expression “and / or” shall be interpreted to include all possible combinations of connective and delimitative relationships. For example, the expression “A and / or B” shall be interpreted to mean only A, only B, or both A and B. The expression “at least one of…” shall be interpreted in the same manner as “and / or”, unless otherwise expressly stated. For example, the expression “at least one of A and B” shall be interpreted to mean only A, only B, or both A and B.

[0064] It should be understood that, unless otherwise specified, the features of the various embodiments described herein can be combined with each other.

[0065] Although specific embodiments have been shown and described herein, those skilled in the art will understand that various alternatives and / or equivalent embodiments may be substituted for the specific embodiments shown and described without departing from the scope of the invention. This application is intended to cover any modifications or variations of the specific embodiments discussed herein. Therefore, the invention is intended to be limited only by the claims and their equivalents.

Claims

1. A power device unit, comprising: A metal body having a first main surface, a second main surface opposite to the first main surface, and a side surface extending perpendicularly between the first main surface and the second main surface; A vertical power semiconductor die, the vertical power semiconductor die being recessed in the first main surface formed in the metal body; as well as An organic and / or glass electrical insulator covers the second main surface of the metal body, such that the power device unit is electrically insulated at least on the first side including the organic and / or glass electrical insulator. The organic and / or glass electrical insulator is confined to the metal body. The back side of the vertical power semiconductor die is configured to be at a different potential than the front side of the vertical power semiconductor die. The metal body is at the same potential as the back side of the vertical power semiconductor die.

2. The power device unit according to claim 1, wherein, The organic and / or glass electrical insulator is part of a foil or strip applied to the second main surface of the metal body.

3. The power device unit according to claim 1, wherein, The organic and / or glass electrical insulator is a resist, adhesive, or wax coated on the second primary surface of the metal body.

4. The power device unit according to claim 1, wherein, The organic and / or glass electrical insulators include plastics.

5. The power device unit according to claim 1, wherein, The organic and / or glass electrical insulator is glass cloth.

6. The power device unit according to claim 5, wherein, The glass cloth is part of a laminate, which also includes an aluminum foil between the glass cloth and the second main surface of the metal body, an adhesive applied to the side of the glass cloth opposite to the aluminum foil, and a liner applied to the adhesive on the side of the adhesive opposite to the glass cloth.

7. The power device unit according to claim 1, wherein, The organic and / or glass electrical insulator has the same area as the second main surface of the metal body.

8. The power device unit according to claim 1, wherein, The organic and / or glass electrical insulator extends onto the side of the metal body.

9. The power device unit according to claim 8, wherein, The organic and / or glass electrical insulator also extends to the first main surface of the metal body.

10. The power device unit according to claim 1, wherein, The organic and / or glass electrical insulator has a thickness ranging from 5 mm to 0.01 mm.

11. The power device unit according to claim 10, wherein, The thickness of the organic and / or glass electrical insulator is in the range of 2 mm to 0.05 mm.

12. The power device unit according to claim 1, wherein, The power device unit has a thickness tolerance of + / - 100 micrometers, including the thickness tolerance of the organic and / or glass electrical insulator.

13. The power device unit of claim 1, further comprising a metal layer covering the side of the organic and / or glass electrical insulator opposite to the metal body.

14. A power electronic component, comprising: Printed circuit boards; as well as A power device unit, which is embedded in the printed circuit board. The power device unit includes: A metal body having a first main surface, a second main surface opposite to the first main surface, and a side surface extending perpendicularly between the first main surface and the second main surface; A vertical power semiconductor die, the vertical power semiconductor die being recessed in a first main surface formed in the metal body; and An organic and / or glass electrical insulator covers the second main surface of the metal body, such that the power device unit is electrically insulated at least on the first side including the organic and / or glass electrical insulator. The organic and / or glass electrical insulator is confined to the metal body. The back side of the vertical power semiconductor die is configured to be at a different potential than the front side of the vertical power semiconductor die. The metal body is at the same potential as the back side of the vertical power semiconductor die.

15. The power electronic component according to claim 14, wherein, The power device unit further includes a metal layer covering the side of the organic and / or glass electrical insulator opposite to the metal body, and wherein the metal layer of the power device unit is attached to the metal layer of the printed circuit board.

16. The power electronic component according to claim 14, wherein, The laminated structure of the printed circuit board covers the organic and / or glass electrical insulator of the power device unit, and wherein the laminated structure of the printed circuit board includes one or more conductive layers and one or more electrical insulating layers.

17. A power electronic component, comprising: Metal frame; as well as A power device unit, the power device unit being mounted to the metal frame. The power device unit includes: A metal body having a first main surface, a second main surface opposite to the first main surface, and a side surface extending perpendicularly between the first main surface and the second main surface; A vertical power semiconductor die, the vertical power semiconductor die being recessed in a first main surface formed in the metal body; and An organic and / or glass electrical insulator covers the second main surface of the metal body, such that the power device unit is electrically insulated at least on the first side including the organic and / or glass electrical insulator. The organic and / or glass electrical insulator is confined to the metal body. The back side of the vertical power semiconductor die is configured to be at a different potential than the front side of the vertical power semiconductor die. The metal body is at the same potential as the back side of the vertical power semiconductor die.

18. The power electronic component according to claim 17, wherein, The power device unit further includes a metal layer covering the side of the organic and / or glass electrical insulator opposite to the metal body, wherein the metal layer of the power device unit is attached to the metal frame.

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