W-band high-conversion-gain active frequency octupler

Abstract

The utility model relates to the technical field of packaging of frequency multipliers, in particular to a W-band high-conversion gain active frequency octupler, which solves the problems of high cost, large volume and high assembly difficulty of a frequency multiplier in the prior art, and comprises an upper shell and a lower shell which are connected with each other, and a terahertz frequency multiplication link and a power supply assembly are arranged on the lower shell. The upper side of the lower shell is provided with a profiling cavity corresponding to the terahertz frequency doubling link in shape, and the terahertz frequency doubling link is arranged in the profiling cavity; a sinking groove is formed in the lower side of the lower shell, and the power assembly is arranged in the sinking groove and penetrates through the lower shell to be electrically connected with the terahertz frequency doubling link. The terahertz frequency multiplier has the beneficial effects that the terahertz frequency multiplication link is integrated on the lower shell, so that the size of the frequency multiplier is reduced; the profiling cavity is arranged to limit the terahertz frequency multiplication link, the assembling difficulty of the frequency multiplier is reduced, meanwhile, the profiling cavity and the sinking groove are formed in the upper surface and the lower surface of the lower shell, the frequency multiplier can be completed through a traditional machining technology, the machining difficulty is low, and the machining cost can be reduced.

Description

Technical Field

[0001] This utility model relates to the field of frequency multiplier packaging technology, and in particular to a W-band high conversion gain active octave multiplier. Background Technology

[0002] With the gradual popularization of 5G, the early research and development and deployment of 6G has become the focus of attention in the industry. In the future, mobile communications are expected to meet the network capability requirements of terahertz ultra-high-speed connectivity and full coverage. Therefore, communication frequency bands are extending to the millimeter wave and terahertz bands, which have extremely rich frequency resources. As a core component of high-frequency communication systems, frequency multipliers use nonlinear devices to generate output signals that are two or more times greater, realizing the function of doubling the signal frequency. They provide local oscillator drive for mixers in the transmitting and receiving ends of communication systems. They have the characteristics of high frequency multiplication efficiency, good stability, and low phase noise, and are currently an important means of obtaining high-frequency solid-state signal sources.

[0003] The prior art patent with publication number CN214281331U discloses a W-band sixth frequency multiplier, including a metal housing. The metal housing includes a second frequency multiplier, an attenuator, a microstrip bandpass filter I, a microstrip bandpass filter II, a first power amplifier, a third frequency multiplier, a low-noise amplifier, a second power amplifier, and a built-in power supply. The input and output terminals of the sixth frequency multiplier use a waveguide-fin transition method to transmit signals. The second frequency multiplier is equipped with an MWX001 chip, and the third frequency multiplier is equipped with an MWX004 chip. The second frequency multiplier is sequentially connected to the attenuator, the microstrip bandpass filter I, the first power amplifier, the microstrip bandpass filter II, the third frequency multiplier, the low-noise amplifier, and the second power amplifier.

[0004] The aforementioned W-band frequency multipliers suffer from drawbacks such as large size, high cost, and difficult assembly. In addition, the large size and high processing cost of the metal casing have created significant difficulties for the engineering application of W-band frequency multiplier modules. Utility Model Content

[0005] This invention proposes a high conversion gain active octave multiplier for the W-band, which solves the problems of high cost, large size, and difficult assembly of existing multipliers.

[0006] The technical solution of this utility model is implemented as follows:

[0007] A high-conversion-gain active octet in the W-band includes an upper housing and a lower housing connected to each other. The lower housing houses a terahertz frequency multiplier link and a power supply assembly. The upper side of the lower housing has a contoured cavity corresponding to the shape of the terahertz frequency multiplier link, and the terahertz frequency multiplier link is housed within the contoured cavity. The lower side of the lower housing has a recessed groove, and the power supply assembly is housed within the recessed groove, passing through the lower housing and electrically connected to the terahertz frequency multiplier link. Integrating the terahertz frequency multiplier link and the power supply assembly onto the lower housing reduces the size of the frequency multiplier. Using a contoured cavity on the lower housing for the terahertz frequency multiplier link's positioning and installation effectively reduces the assembly difficulty of the frequency multiplier. Furthermore, the contoured cavity and recessed groove are located on the upper and lower surfaces of the lower housing, making manufacturing easier and reducing manufacturing costs.

[0008] A metal cover plate is detachably connected to the lower side of the lower housing, and the shape of the metal cover plate corresponds to the shape of the recess. After installation, the metal cover plate is flush with the lower surface of the lower housing. The metal cover plate and the lower housing cooperate to encapsulate the power supply components, preventing them from being exposed and providing protection.

[0009] The power supply assembly includes a power board and an RF glass insulator. The power board is attached to the bottom surface of the sink. The lower housing has a through hole connecting the contoured cavity and the sink. The RF glass insulator is disposed in the through hole. The power board is connected to the terahertz frequency doubling link through the RF glass insulator. The power board is fixed in the sink by power board mounting screws. The power board receives a DC voltage input and generates the DC voltage required by the terahertz frequency doubling link through its internal DC / DC converter and LDO, and supplies power to the terahertz frequency doubling link through the RF glass insulator.

[0010] Conductive adhesive is provided between the inner wall of the contoured cavity and the terahertz frequency multiplier link. The conductive adhesive enables the frequency multiplier to meet relevant vibration and shock requirements.

[0011] The lower housing is provided with a positioning post, and the upper housing is provided with a positioning hole. The positioning post and the positioning hole are inserted into each other. The engagement of the positioning post and the positioning hole ensures that the relative positions of the upper and lower housings are accurate when they are connected, thereby ensuring that the SMA connector can be smoothly installed on the upper and lower housings.

[0012] The terahertz frequency multiplication link comprises multiple chipsets, each including a frequency multiplier chip and an amplifier chip. The input of the frequency multiplier chip in the first chipset is connected to an SMA connector, and the output of the amplifier chip in the last chipset is connected to a transition probe substrate. The frequency multiplier chip, amplifier chip, and transition probe substrate are all housed within a contoured cavity. The SMA connectors are located on the outside of the upper and lower housings, corresponding to the ends of the contoured cavity. A filter connects the frequency multiplier chip and the amplifier chip. The SMA connectors are connected to both the upper and lower housings simultaneously via connector mounting screws to ensure stable installation. The low-frequency signal enters the frequency multiplier chip through the SMA connector for frequency multiplication. After each frequency multiplication stage, spurious suppression is increased by a filter, followed by power amplification by the amplifier chip. After multiple frequency multiplications, the high-conversion-gain high-frequency signal is finally output to the waveguide port through the transition probe substrate.

[0013] The chipset comprises three components: the first includes a frequency doubler chip I and an amplifier chip I; the second includes a frequency doubler chip II and an amplifier chip II; and the third includes a frequency doubler chip III and an amplifier chip III. The input of the frequency doubler chip I is connected to an SMA connector, and the amplifier chip III is connected to a transition probe substrate. After the X-band signal undergoes three stages of frequency doubling and filtering, the W-band signal is finally obtained.

[0014] An attenuator is connected between the frequency multiplier chip I and the amplifier chip I. The attenuator attenuates signal noise to meet the power design requirements of the frequency multiplier.

[0015] The contoured cavity contains a microwave plate, on which microstrip lines are provided. The SMA connector, frequency multiplier chip, amplifier chip, and transition probe substrate are interconnected via the microstrip lines.

[0016] The frequency multiplier chip is connected to capacitor chip I, and the amplifier chip is connected to capacitor chip II. Placing capacitor chips at the pin positions of the frequency multiplier chip and the amplifier chip can smooth power supply ripple, reduce voltage fluctuations, and ensure the stability of the power supply voltage.

[0017] The beneficial effects of this utility model are: 1. The terahertz frequency multiplier link and power supply components are integrated on the lower housing, which reduces the size of the frequency multiplier; the terahertz frequency multiplier link is limited and installed by setting a contour cavity on the lower housing, which effectively reduces the assembly difficulty of the frequency multiplier. At the same time, the contour cavity and the groove are set on the upper and lower surfaces of the lower housing, which can be completed by traditional machining processes, with high error tolerance and low processing difficulty, which helps to reduce processing costs.

[0018] 2. The input end of the terahertz frequency multiplier link is electrically connected to the SMA connector via a microstrip line on the microwave board. The output end outputs the frequency-multiplied signal from the waveguide port via a transition probe substrate. The frequency multiplier chip and the microwave board are both encapsulated in the cavity on the surface of the lower housing. The power board is fixed below the lower housing and supplies power to the frequency multiplier chip by welding the RF glass insulator to the microstrip line of the microwave board. The structure utilizes a metal cover plate to encapsulate the overall structure, thereby achieving high-order frequency multiplication of the signal and increasing the output power.

[0019] 3. During assembly, apply conductive adhesive to the contoured cavity of the upper housing to ensure that the frequency multiplier can meet the relevant vibration and impact requirements. Attached Figure Description

[0020] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0021] Figure 1 This is an exploded view of a high conversion gain active octave multiplier in the W-band according to this utility model.

[0022] Figure 2 Cross-sectional view of a high conversion gain active octave multiplier in the W-band;

[0023] Figure 3 A schematic diagram showing the installation of a terahertz frequency doubling link on the lower housing;

[0024] Figure 4 A schematic diagram showing the power supply assembly installed inside the lower housing;

[0025] Figure 5 This is a schematic diagram showing the mounting of the frequency multiplier chip and amplifier chip on the lower housing.

[0026] In the diagram: 1. Connector mounting screw; 2. Frequency doubler chip I; 3. Capacitor chip I; 4. Attenuator; 5. Frequency doubler chip II; 6. Microwave board; 7. Amplifier chip I; 8. Frequency doubler chip III; 9. Amplifier chip II; 10. Upper housing; 11. Transition probe substrate; 12. Lower housing; 13. Capacitor chip II; 14. RF glass insulator; 15. Amplifier chip III; 16. Metal cover plate; 18. Power board; 17. Positioning post; 19. Power board mounting screw; 20. Contouring cavity; 21. Countersunk groove; 22. SMA connector; 23. Through hole. Detailed Implementation

[0027] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0028] Example 1, as Figure 1 , Figure 2 As shown, a W-band high conversion gain active octave multiplier includes an upper housing 10 and a lower housing 12 connected to each other. The lower housing 12 houses a terahertz frequency multiplier link and a power supply assembly. A contoured cavity 20, corresponding to the shape of the terahertz frequency multiplier link, is located on the upper side of the lower housing 12, and the terahertz frequency multiplier link is disposed within the contoured cavity 20. A recessed groove 21 is located on the lower side of the lower housing 12, and the power supply assembly is disposed within the recessed groove 21, passing through the lower housing 12 and electrically connected to the terahertz frequency multiplier link. Integrating the terahertz frequency multiplier link and the power supply assembly onto the lower housing 12 reduces the size of the multiplier. Using the contoured cavity 20 on the lower housing 12 for limiting the installation of the terahertz frequency multiplier link effectively reduces the assembly difficulty of the multiplier. Furthermore, the contoured cavity 20 and the recessed groove 21 are located on the upper and lower surfaces of the lower housing 12, and can be completed using traditional machining processes, resulting in high error tolerance, low machining difficulty, and reduced manufacturing costs.

[0029] In addition, both the upper housing 10 and the lower housing 12 are metal housings. The upper housing 10 and the lower housing 12 are connected by bolts. After the upper housing 10 and the lower housing 12 are connected, the terahertz frequency multiplication link is encapsulated to realize high-order frequency multiplication of the signal flat path and improve the output power.

[0030] Furthermore, such as Figure 2 , Figure 4 As shown, a metal cover plate 16 is detachably connected to the lower side of the lower housing 12, and the shape of the metal cover plate 16 corresponds to that of the recess 21. After installation, the metal cover plate 16 is flush with the lower surface of the lower housing 12. The metal cover plate 16 is connected to the lower housing 12 by bolts, and the metal cover plate 16 and the lower housing 12 cooperate to encapsulate the power supply components, preventing the power supply components from being exposed and providing protection.

[0031] Example 2, based on Example 1, such as Figure 4As shown, a high conversion gain active eighth frequency multiplier in the W-band includes a power supply assembly comprising a power board 18 and an RF glass insulator 14. The power board 18 is fitted to the bottom surface of a recess 21. A through hole 23 is provided on the lower housing 12, connecting the contoured cavity 20 and the recess 21. The RF glass insulator 14 is disposed within the through hole 23. The power board 18 is connected to a terahertz frequency multiplier link via the RF glass insulator 14. The power board 18 is fixed in the recess 21 by power board mounting screws 19. The power board 18 receives a DC voltage input and generates the DC voltage required by the terahertz frequency multiplier link through its internal DC / DC converter and LDO, and supplies power to the terahertz frequency multiplier link through the RF glass insulator 14.

[0032] Furthermore, conductive adhesive is provided between the inner wall of the contoured cavity 20 and the terahertz frequency multiplier link. The conductive adhesive enables the frequency multiplier to meet relevant vibration and shock requirements. In addition, absorbing material is bonded or pressed onto the upper housing 10 for electromagnetic shielding.

[0033] Furthermore, the lower housing 12 is provided with a positioning post 17, and the upper housing 10 is provided with a positioning hole. The positioning post 17 is inserted into the positioning hole. The engagement of the positioning post 17 and the positioning hole ensures that the relative positions of the upper housing 10 and the lower housing 12 are accurate when connected, thereby ensuring that the SMA connector 22 can be smoothly installed on the upper housing 10 and the lower housing 12.

[0034] Furthermore, the terahertz frequency multiplication link includes multiple chipsets, each including a frequency multiplier chip and an amplifier chip. The input terminal of the frequency multiplier chip in the first chipset is connected to an SMA connector 22, and the output terminal of the amplifier chip in the last chipset is connected to a transition probe substrate 11. The frequency multiplier chip, amplifier chip, and transition probe substrate 11 are all disposed within the contoured cavity 20. The SMA connector 22 is disposed on the outside of the upper housing 10 and the lower housing 12, with the SMA connector 22 corresponding to the end position of the contoured cavity 20. A filter is connected between the frequency multiplier chip and the amplifier chip. The SMA connector is connected to both the upper housing 10 and the lower housing 12 simultaneously via connector mounting screws 1. The low-frequency signal enters the frequency multiplier chip through the SMA connector 22 for frequency multiplication. After each frequency multiplication stage, spurious suppression is increased by a filter, and then power amplification is performed by the amplifier chip. After multiple frequency multiplications, the high-conversion-gain high-frequency signal is finally output to the waveguide port through the transition probe substrate 11.

[0035] Example 3, based on Example 2, provides a high conversion gain active eighth frequency multiplier in the W-band, such as... Figure 3 , Figure 5As shown, in this embodiment, there are three chipsets forming a three-stage frequency multiplication link. The first chipset includes a second frequency multiplier chip I2 and an amplifier chip I7; the second chipset includes a second frequency multiplier chip II5 and an amplifier chip II9; and the third chipset includes a second frequency multiplier chip III8 and an amplifier chip III15. The input terminal of the second frequency multiplier chip I2 is connected to an SMA connector 22, and the amplifier chip III15 is connected to a transition probe substrate 11. The X-band signal enters the first group of second frequency multiplier chips I2 and amplifier chip I7 through the SMA connector 22 for first-stage second frequency multiplication, then enters the second group of second frequency multiplier chips II5 and amplifier chip II9 for second-stage second frequency multiplication, and finally enters the third group of second frequency multiplier chips III8 and amplifier chip III15 for third-stage second frequency multiplication, ultimately obtaining the W-band signal.

[0036] Furthermore, an attenuator 4 is connected between the frequency multiplier chip I2 and the amplifier chip I7. The attenuator attenuates signal noise to meet the power design requirements of the frequency multiplier. A microwave board 6 is provided inside the contoured cavity 20. Microstrip lines are provided on the microwave board 6, and the SMA connector 22, the frequency multiplier chip, the amplifier chip, the transition probe substrate 11, and the RF glass insulator are interconnected through the microstrip lines. The power board 18 supplies power to the SMA connector 22, the frequency multiplier chip, the amplifier chip, and the transition probe substrate 11 through the RF glass insulator 14 and the microstrip lines to ensure the normal operation of the frequency multiplier. Signals are transmitted between the SMA connector 22 and the frequency multiplier chip, between the frequency multiplier chip and the amplifier chip, and between the amplifier chip and the transition probe substrate 11 through the microstrip lines. The shape of the microwave board 6 is the same as that of the contoured cavity.

[0037] Furthermore, capacitor chip I3 is connected to the frequency multiplier chip, and capacitor chip II13 is connected to the amplifier chip. The frequency multiplier signal is an active chip, and capacitor chip I3 is connected to the microstrip line on the microwave board 6 by gold wire bonding. Placing capacitor chips at the pin positions of the frequency multiplier chip and the amplifier chip can smooth power supply pulsation, reduce voltage fluctuations, and ensure the stability of the power supply voltage.

[0038] The frequency multiplier signal transmission process is as follows: The low-frequency signal (X-band) is input into the frequency multiplier through the SMA connector 22 and the electrical connection of the microstrip line etched on the microwave board 6. After passing through the frequency multiplier chip I2, the X-band is doubled for the first stage. The power board 18 is electrically connected to the microstrip line on the microwave board 6 through the welded RF glass insulator 14 to supply power to the frequency multiplier chip I2. After the first stage of frequency multiplication, the signal enters the filter structure on the microwave board through the microstrip line. Then, the signal noise is attenuated by the attenuator 4 and amplified by the amplifier chip I7 to meet the next stage of frequency multiplication, thus achieving the first stage of frequency multiplication. After that, the signal passes through the frequency multiplier chip II5, the filter, and the amplifier chip II9 in sequence to achieve the second stage of frequency multiplication. Finally, the signal passes through the frequency multiplier chip III8, the filter, and the amplifier chip III15 in sequence to obtain the high-frequency signal (W-band). The high-conversion-gain W-band signal is then output to the waveguide port through the transition probe substrate 11.

[0039] The above description is only a preferred embodiment of the present utility model and is not intended to limit the present utility model. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.

Claims

1. A high conversion gain active octave multiplier in the W-band, characterized in that, The device includes an upper housing (10) and a lower housing (12) that are connected to each other. The lower housing (12) is provided with a terahertz frequency multiplier link and a power supply assembly. The upper side of the lower housing (12) is provided with a contoured cavity (20) corresponding to the shape of the terahertz frequency multiplier link. The terahertz frequency multiplier link is located in the contoured cavity (20). The lower side of the lower housing (12) is provided with a recess (21). The power supply assembly is located in the recess (21). The power supply assembly passes through the lower housing (12) and is electrically connected to the terahertz frequency multiplier link.

2. The high conversion gain active octave multiplier in the W-band according to claim 1, characterized in that, A metal cover plate (16) is detachably connected to the lower side of the lower housing (12), and the shape of the metal cover plate (16) corresponds to that of the sink (21).

3. The high conversion gain active octave multiplier in the W-band according to claim 2, characterized in that, The power supply assembly includes a power board (18) and an RF glass insulator (14). The power board (18) is attached to the bottom surface of the sink (21). The lower housing (12) is provided with a through hole (23) connecting the contour cavity (20) and the sink (21). The RF glass insulator (14) is disposed in the through hole (23). The power board (18) is connected to the terahertz frequency doubling link through the RF glass insulator (14).

4. The W-band high conversion gain active octave multiplier according to any one of claims 1 to 3, characterized in that, The lower housing (12) is provided with a positioning post (17), and the upper housing (10) is provided with a positioning hole. The positioning post (17) is inserted into the positioning hole.

5. The high conversion gain active octave multiplier in the W-band according to claim 4, characterized in that, Conductive adhesive is provided between the inner wall of the contour cavity (20) and the terahertz frequency doubling link.

6. The high conversion gain active octave multiplier in the W-band according to claim 1 or 5, characterized in that, The terahertz frequency multiplication link includes multiple chipsets, each of which includes a frequency multiplier chip and an amplifier chip. The input end of the frequency multiplier chip in the first chipset is connected to an SMA connector (22), and the output end of the amplifier chip in the last chipset is connected to a transition probe substrate (11). The frequency multiplier chip, the amplifier chip, and the transition probe substrate (11) are all located inside the contoured cavity (20). The SMA connector (22) is located outside the upper housing (10) and the lower housing (12), and the SMA connector (22) corresponds to the end position of the contoured cavity (20). A filter is connected between the frequency multiplier chip and the amplifier chip.

7. The high conversion gain active octave multiplier in the W-band according to claim 6, characterized in that, There are three chipsets. The first chipset includes a frequency doubler chip I (2) and an amplifier chip I (7). The second chipset includes a frequency doubler chip II (5) and an amplifier chip II (9). The third chipset includes a frequency doubler chip III (8) and an amplifier chip III (15). The input terminal of the frequency doubler chip I (2) is connected to the SMA connector (22), and the amplifier chip III (15) is connected to the transition probe substrate (11).

8. The high conversion gain active octave multiplier in the W-band according to claim 7, characterized in that, An attenuator (4) is connected between the frequency multiplier chip I (2) and the amplifier chip I (7).

9. The high conversion gain active octave multiplier in the W-band according to claim 7 or 8, characterized in that, The contoured cavity (20) is equipped with a microwave board (6), and microstrip lines are provided on the microwave board (6). The SMA connector (22), frequency multiplier chip, amplifier chip, transition probe substrate (11) and radio frequency glass insulator are interconnected through microstrip lines.

10. The high conversion gain active octave multiplier in the W-band according to claim 9, characterized in that, The frequency multiplier chip is connected to capacitor chip I (3), and the amplifier chip is connected to capacitor chip II (13).

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