Annular electrostatic protection FPC for TFT module

Abstract

The utility model discloses an annular electrostatic protection FPC (Flexible Printed Circuit) for a TFT (Thin Film Transistor) module. The annular electrostatic protection FPC comprises TFT upper glass, and an ITO (Indium Tin Oxide) conducting layer is plated on the front surface of the TFT upper glass; the lower TFT glass sheet is attached to the back surface of the upper TFT glass sheet; the FPC is connected to the surface of the lower TFT glass; wherein an annular auxiliary FPC is arranged on the outer side of the FPC, the FPC is connected with the ITO conducting layer through the annular auxiliary FPC to form static conduction, and meanwhile, the FPC and the annular auxiliary FPC can cover the surface of the driving IC when being assembled, so that the driving IC can be covered, and the static is prevented from directly reaching the driving IC. According to the annular electrostatic protection FPC for the TFT module provided by the utility model, the annular auxiliary FPC is additionally arranged on the basis of a traditional FPC, and the annular auxiliary FPC is laid at the edge of the ITO conducting layer, so that static electricity can be conducted on the annular auxiliary FPC at the fastest speed to be conducted and released no matter where the static electricity is generated, and the overall antistatic capability of the TFT module is effectively improved.

Description

Technical Field

[0001] This utility model relates to the field of FPC technology, and in particular to a ring-shaped electrostatic protection FPC for TFT modules. Background Technology

[0002] Flexible printed circuit boards (FPCs) are highly reliable and extremely flexible printed circuit boards made with polyimide or polyester film as the substrate. They are characterized by high wiring density, light weight, and thinness, and are mainly used in many products such as mobile phones, laptops, PDAs, digital cameras, and LCMs.

[0003] As shown in the attached instruction manual Figure 11 and Figure 12 As shown, an IPS TFT is formed by bonding an upper glass 1-1 and a lower glass 1-2 together with a peripheral epoxy frame, and the cell is filled with liquid crystal. In order to improve the anti-static capability, an ITO conductive layer 1-3 is generally deposited on the front side of the upper glass 1-1 as a shielding layer. The ITO conductive layer 1-3 is connected to the metal traces on the lower glass 1-2 by applying silver paste 1-4. The metal traces are connected to the pins on the bonding position of FPC 1-5, and finally connected to the main ground through FPC.

[0004] However, the conventional FPC structure has certain defects in practical applications. Since the silver paste is located at the bottom of the upper glass, if static electricity occurs in the upper half of the upper glass, it takes a certain amount of time to conduct the static electricity to the FPC through the silver paste for release, resulting in low static electricity conduction efficiency. Furthermore, since the static electricity discharge has to pass through the silver paste, the lower glass, and the FPC in sequence, the stability of the conduction cannot be guaranteed. Therefore, a ring-shaped static protection FPC for TFT modules is proposed. Utility Model Content

[0005] Based on this, it is necessary to provide a ring-shaped electrostatic discharge protection FPC for TFT modules to address the above-mentioned technical problems. A ring-shaped auxiliary FPC is added to the traditional FPC and laid at the edge of the ITO conductive layer. In this way, no matter where static electricity occurs, it can be connected and released on the ring-shaped auxiliary FPC at the fastest speed.

[0006] To solve the above-mentioned technical problems, the present invention adopts the following technical solution:

[0007] A ring-shaped electrostatic protection FPC for TFT modules includes:

[0008] The TFT top glass has an ITO conductive layer deposited on its front side.

[0009] The lower TFT glass is attached to the back of the upper TFT glass.

[0010] FPC, which is connected to the surface of the lower glass of the TFT;

[0011] The FPC has an annular auxiliary FPC on its outer side, and the FPC is connected to the ITO conductive layer through the annular auxiliary FPC to form a conduction for static electricity.

[0012] Furthermore, the annular auxiliary FPC includes side FPCs extending outward from both sides of the FPC.

[0013] Furthermore, the top of the side FPC extends toward the upper glass of the TFT and overlaps the surface of the ITO conductive layer to form a connection.

[0014] Furthermore, the top walls of the inner sides of the two side FPCs are connected together by a reinforced FPC.

[0015] Furthermore, the side FPC and the reinforcing FPC together form an annular separation groove.

[0016] Furthermore, an upper polarizer is attached to the surface of the ITO conductive layer on the upper glass of the TFT.

[0017] Furthermore, the tops of the reinforcing FPC and the side FPC are flush, and the tops of the reinforcing FPC and the side FPC are connected together by a ring-shaped FPC.

[0018] Furthermore, a conductive gap is left between the upper polarizer and the edge of the upper glass of the TFT;

[0019] The annular FPC is adapted to the conductive gap.

[0020] Furthermore, a conductive double-sided adhesive is attached to the back of the annular FPC, and the annular FPC is connected to the ITO conductive layer through the conductive double-sided adhesive.

[0021] Furthermore, a driving IC is provided at the bottom of the TFT lower glass surface, and the reinforcing FPC covers the surface of the driving IC for protection.

[0022] Compared with the prior art, the present invention has the following beneficial effects:

[0023] The TFT module using the ring-shaped electrostatic discharge protection FPC provided by this utility model adds a ring-shaped auxiliary FPC to the traditional FPC, which is directly laid on the edge of the ITO conductive layer. This eliminates the need for indirect conduction by applying silver paste. In this way, no matter where static electricity occurs, it can be connected and released quickly through the ring-shaped auxiliary FPC, effectively improving the overall antistatic capability and stability of the TFT module.

[0024] Meanwhile, since the ring-shaped auxiliary FPC will cover the surface of the driver IC during assembly, it will form a cover for the driver IC to prevent static electricity from directly reaching the driver IC;

[0025] By setting up the annularly separated slots, when the FPC and the annular auxiliary FPC are integrated into a structural design, the positions of the FPC and the annular auxiliary FPC can be staggered to achieve their connection with the corresponding upper and lower TFT glass respectively. Attached Figure Description

[0026] Figure 1 This is a schematic diagram of the structure of the annular electrostatic protection FPC for TFT modules provided by this utility model;

[0027] Figure 2 A partial structural schematic diagram of the annular electrostatic protection FPC for TFT modules provided by this utility model;

[0028] Figure 3 The ring-shaped electrostatic protection FPC for TFT modules provided by this utility model Figure 2 Enlarged structural diagram at point A in the middle;

[0029] Figure 4 A schematic diagram of the FPC structure for the annular electrostatic protection FPC for TFT modules provided by this utility model;

[0030] Figure 5 A schematic diagram of the FPC and side FPC structure of the annular electrostatic protection FPC for TFT modules provided by this utility model;

[0031] Figure 6 A schematic diagram of the side FPC, FPC and reinforced FPC structure of the annular electrostatic protection FPC for TFT modules provided by this utility model;

[0032] Figure 7 A schematic diagram of the annular FPC structure for the annular electrostatic protection FPC for TFT modules provided by this utility model;

[0033] Figure 8 A schematic diagram of the conductive gap structure formed by the TFT upper glass and the upper polarizer assembly in the annular electrostatic protection FPC for the TFT module provided by this utility model.

[0034] Figure 9 A schematic diagram of the structure of the annular electrostatic protection FPC for the TFT module provided by this utility model after the annular FPC and the conductive gap are pasted together.

[0035] Figure 10 A schematic diagram of the conductive double-sided adhesive structure of the annular electrostatic protection FPC for TFT modules provided by this utility model;

[0036] Figure 11 A schematic diagram of one of the conventional electrostatic protection structures for TFT modules in the background art provided by this utility model;

[0037] Figure 12 This is a schematic diagram of a conventional TFT module electrostatic protection structure in the background art provided for this utility model.

[0038] The markings in the diagram are explained as follows:

[0039] TFT upper glass 1, ITO conductive layer 11, upper polarizer 12, conductive gap 13;

[0040] TFT lower glass 2, driver IC 21;

[0041] FPC 3;

[0042] Annular auxiliary FPC4, side FPC41, reinforcing FPC43, annular separation groove 44, annular FPC45;

[0043] Conductive double-sided adhesive 450. Detailed Implementation

[0044] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the protection scope of the present invention.

[0045] As described in the background section, conventional FPC structures have certain defects in practical applications. Since the silver paste is located at the bottom of the upper glass, if static electricity occurs in the upper half of the upper glass, it takes a certain amount of time to conduct the static electricity to the FPC through the silver paste for release, resulting in low efficiency of static electricity conduction.

[0046] To solve this technical problem, this utility model provides a ring-shaped electrostatic protection FPC for TFT modules, which is applied to TFT modules.

[0047] For details, please refer to Figures 1-12 As shown, the TFT module using a ring-shaped electrostatic protection FPC specifically includes:

[0048] TFT upper glass 1, an ITO conductive layer 11 is deposited on the front side of the TFT upper glass;

[0049] The TFT lower glass 2 is attached to the back of the TFT upper glass 1;

[0050] FPC3 is connected to the surface of the lower glass 2 of the TFT;

[0051] The FPC3 has an annular auxiliary FPC4 on its outer side, and the FPC3 is connected to the ITO conductive layer 11 through the annular auxiliary FPC4 to form a conduction for static electricity.

[0052] The TFT module using the annular electrostatic discharge protection FPC provided by this utility model adds an annular auxiliary FPC4 to the traditional FPC3, which is laid at the edge of the ITO conductive layer 11. In this way, no matter where static electricity occurs, it can be connected and released at the fastest speed through the annular auxiliary FPC4, effectively improving the overall antistatic capability of the TFT module.

[0053] To enable those skilled in the art to better understand the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings.

[0054] It should be noted that, unless otherwise specified, the embodiments and features and technical solutions in the present invention can be combined with each other.

[0055] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0056] Example 1

[0057] Please refer to Figure 1 , Figure 2 , Figure 3 , Figure 4 and Figure 5As shown, a ring-shaped electrostatic discharge (ESD) protection FPC for a TFT module includes: a TFT upper glass 1 with an ITO conductive layer 11 deposited on the front side of the TFT upper glass; a TFT lower glass 2 attached to the back side of the TFT upper glass 1; and an FPC 3 connected to the surface of the TFT lower glass 2. An annular auxiliary FPC 4 is provided on the outer side of the FPC 3, and the FPC 3 is connected to the ITO conductive layer 11 through the annular auxiliary FPC 4 to form a conduction barrier against static electricity.

[0058] like Figure 5 As shown, the annular auxiliary FPC4 includes side FPC41 extending outward from both sides of the FPC3, and the two side FPC41 are symmetrically distributed on both sides of the FPC3 and integrally formed therewith.

[0059] A first arc chamfer is formed at the connection between the inner side of FPC41 and FPC3. The design of this first arc chamfer can disperse the stress at the connection between FPC3 and FPC41, ensuring that it is not easy to tear during actual assembly.

[0060] The top of the side FPC41 extends toward the TFT upper glass 1 and overlaps the surface of the ITO conductive layer 11 to form a connection. Since the top of the side FPC41 has a certain width, the contact area for connecting with the upper TFT upper glass 1 is increased compared with the traditional silver paste application method. By increasing the contact area, the electrostatic conductivity and efficiency are improved, thus meeting the actual electrostatic protection requirements.

[0061] Specifically, one end of FPC3 can be connected to the surface of the lower TFT glass 2, and then the side FPC41 can be flipped so that it forms a certain angle with FPC3, so that it is attached to the edge of the upper TFT glass 1 for connection, thereby completing the connection of the electrostatic conduction structure.

[0062] Example 2

[0063] This embodiment further optimizes the ring-shaped auxiliary FPC4 based on Embodiment 1. A reinforcing FPC43 is connected between the two side FPC41s to further improve its electrostatic conductivity. Specifically, as shown below... Figure 6As shown, the top walls of the inner sides of the two side FPC41 are connected to a reinforcing FPC43. Through the design of the reinforcing FPC43, the two side FPC41s can be connected. The reinforcing FPC43, the two side FPC41s and FPC3 are all integrated structures, which makes the overall FPC structure stronger. At the same time, the contact area when connecting with the TFT upper glass 1 through the ring auxiliary FPC4 will be further increased, thereby further improving the electrostatic conduction efficiency and stability.

[0064] The side FPC41 and the reinforcing FPC43 together form an annular separation groove 44. Through the design of the annular separation groove 44, when the FPC3 is connected to the corresponding TFT lower glass 2, the side FPC41 and the reinforcing FPC43 can be flipped at an angle with the FPC3 so that they can be attached to the TFT upper glass 1 for connection.

[0065] Specifically, FPC3 is connected to the surface of the lower TFT glass 2, and then the side FPC41 and the reinforcing FPC43 are flipped so that one end of them are attached to the surface of the upper TFT glass 1. Compared with the connection and conduction structure that only uses the side FPC41 in Embodiment 1, the contact area is further increased, the efficiency and stability of electrostatic conduction are improved, and the overall structure of the FPC is made more compact, making it less prone to tearing.

[0066] Example 3

[0067] The annular electrostatic protection FPC for the TFT module provided in Example 2 has been further optimized, such as... Figure 8 As shown, an upper polarizer 12 is attached to the surface of the ITO conductive layer 11 on the upper glass of the TFT 1. A conductive gap 13 is left between the upper polarizer 12 and the edge of the upper glass of the TFT 1. The ITO conductive layer 11 on the upper glass of the TFT 1 is exposed to the outside through the conductive gap 13 for attachment and connection with the annular auxiliary FPC 4.

[0068] like Figure 9 As shown, the top ends of the reinforcing FPC43 and the side FPC41 are flush, and the top ends of the reinforcing FPC43 and the side FPC41 are connected to an annular FPC45, wherein the annular FPC45 is adapted to the conductive gap 13.

[0069] like Figure 10As shown, a conductive double-sided adhesive 450 is attached to the back of the annular FPC45. The annular FPC45 is connected to the ITO conductive layer 11 by the conductive double-sided adhesive 450. The conductive double-sided adhesive 450 has adhesive properties on both sides, so it can form a connection with the corresponding external annular FPC45 and conductive gap 13. At the same time, due to its own conductive properties, it can also satisfy the conduction of static electricity.

[0070] In practical applications, the conductive double-sided adhesive 450 is first pasted into the conductive gap 13 to complete the bonding with the ITO conductive layer 11. Then, after the FPC3 is connected to the TFT lower glass 2, the annular FPC45 is pasted on the other side of the conductive double-sided adhesive 450. Since the annular FPC45, the reinforcing FPC43 and the side FPC41 are connected as a whole, when static electricity occurs at a certain point, it can quickly form a conduction on the nearby annular auxiliary FPC4, thereby realizing the rapid release of static electricity and improving the efficiency of static electricity discharge.

[0071] FPC3 is connected to the metal traces on the lower TFT glass 2. The metal traces are connected to the pins on the bonding position of FPC3 and finally connected to the main ground (GND) through FPC. The structural principle of electrostatic conduction between FPC3 and the lower TFT glass 2 after receiving is a mature and well-established existing technology, so it is not further described in this embodiment.

[0072] like Figure 2 and Figure 3 As shown, as a further optimization of this embodiment: a driving IC21 is provided at the bottom of the surface of the TFT lower glass 2. Since the annular auxiliary FPC4 will cover the surface of the driving IC21 during assembly, it will form a cover over the driving IC21 to prevent static electricity from directly reaching the driving IC21.

[0073] The usage process of the annular electrostatic protection FPC for TFT modules provided by this utility model is as follows: Instead of the traditional method of applying silver paste, the annular FPC45 is directly attached to the conductive gap 13 using conductive double-sided adhesive 450. This allows static electricity to be directly conducted to the surface of the nearest annular auxiliary FPC4 and connected to FPC3 when static electricity occurs at any location on the TFT. Ultimately, the static electricity is released through the main ground (GND) connected to the FPC. Furthermore, since the annular auxiliary FPC4 and FPC3 are integrated, compared to the traditional method of first conducting static electricity to the TFT lower glass using silver paste and then conducting it to the FPC through the TFT lower glass, this method ensures the stability and efficiency of static electricity conduction.

[0074] In this utility model, unless otherwise explicitly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection, an electrical connection, or a connection that allows communication between them; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise explicitly limited. Those skilled in the art can understand the specific meaning of the above terms in this utility model according to the specific circumstances.

[0075] Obviously, the embodiments described above are only some embodiments of this utility model, not all embodiments. The accompanying drawings show preferred embodiments of this utility model, but do not limit the patent scope of this utility model. This utility model can be implemented in many different forms; rather, the purpose of providing these embodiments is to provide a more thorough and comprehensive understanding of the disclosure of this utility model. Although this utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing specific embodiments, or make equivalent substitutions for some of the technical features. Any equivalent structures made using the content of this utility model specification and drawings, directly or indirectly applied to other related technical fields, are similarly within the patent protection scope of this utility model.

Claims

1. A ring-shaped electrostatic protection FPC for TFT modules, characterized in that, It includes: TFT top glass (1), with an ITO conductive layer (11) deposited on the front side of the TFT top glass. The TFT lower glass (2) is attached to the back side of the TFT upper glass (1); FPC (3), which is connected to the surface of the TFT lower glass (2); Among them, an annular auxiliary FPC (4) is provided on the outside of the FPC (3), and the FPC (3) is connected to the ITO conductive layer (11) through the annular auxiliary FPC (4) to form a fast conduction of static electricity.

2. The annular electrostatic protection FPC for TFT modules according to claim 1, characterized in that, The ring-shaped auxiliary FPC (4) includes side FPCs (41) extending outward from both sides of the FPC (3).

3. The annular electrostatic protection FPC for TFT modules according to claim 2, characterized in that, The top of the side FPC (41) extends toward the TFT upper glass (1) and overlaps the surface of the ITO conductive layer (11) to form a connection.

4. The annular electrostatic protection FPC for TFT modules according to claim 2, characterized in that, The top walls inside the two side FPCs (41) are connected to a reinforcing FPC (43).

5. The annular electrostatic protection FPC for TFT modules according to claim 4, characterized in that, The side FPC (41) and the reinforcing FPC (43) together form an annular separation groove (44).

6. The annular electrostatic protection FPC for TFT modules according to claim 4, characterized in that, An upper polarizer (12) is attached to the surface of the ITO conductive layer (11) on the upper glass (1) of the TFT.

7. The annular electrostatic protection FPC for TFT modules according to claim 6, characterized in that, The tops of the reinforcing FPC (43) and the side FPC (41) are flush, and the tops of the reinforcing FPC (43) and the side FPC (41) are connected together by an annular FPC (45).

8. The annular electrostatic protection FPC for TFT modules according to claim 7, characterized in that, A conductive gap (13) is left between the upper polarizer (12) and the edge of the TFT upper glass (1). The annular FPC (45) is adapted to the conductive gap (13).

9. The annular electrostatic protection FPC for TFT modules according to claim 7, characterized in that, The back of the annular FPC (45) is covered with a conductive double-sided adhesive (450), and the annular FPC (45) is connected to the ITO conductive layer (11) by the conductive double-sided adhesive (450).

10. The annular electrostatic protection FPC for TFT modules according to claim 4, characterized in that, The bottom of the TFT lower glass (2) surface is provided with a driving IC (21), and the reinforcing FPC (43) covers the surface of the driving IC (21) for protection.

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