Crystal ingot stripping device
By coordinating the dynamic focusing module and the fixed components, the laser focus position is adjusted in real time, which solves the problem of insufficient focusing control during the SiC ingot stripping process and improves the uniformity of the modified layer and the stripping quality.
Patent Information
- Application Number
- CN202521838974.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-08-28
- Publication Date
- 2025-10-31
- Estimated Expiration
- 2035-08-28
AI Technical Summary
In the process of SiC ingot stripping, the existing laser modification technology suffers from insufficient focusing control, resulting in inconsistent laser focal point positions, which affects the uniformity and quality of the modification effect.
A dynamic focusing module, including a rangefinder, an objective lens, and a first motion module, is used to measure the height of the crystal ingot surface in real time and dynamically adjust the position of the objective lens to ensure that the laser focus is always at a predetermined depth. Combined with a fixing component, the crystal ingot is moved to achieve precise focusing of the laser beam.
It improves the uniformity and quality of the modified layer, significantly reduces the roughness of the peeling surface, and improves the efficiency and quality of SiC ingot peeling.
Smart Images
Figure CN223492326U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of laser cutting technology, and in particular to a crystal ingot stripping device. Background Technology
[0002] In the field of semiconductor material processing, especially in the stripping process of SiC (silicon carbide) ingots, laser refining technology is widely used due to its high efficiency and precision. Laser refining achieves ingot stripping by introducing a high-energy laser beam inside the ingot to form a refining layer. However, existing technologies have significant shortcomings in focus control, which limits the application effect and quality of laser refining technology.
[0003] In traditional laser refining systems, the laser beam is typically focused statically. This means that before processing begins, the optical system is adjusted to fix the laser focus at a predetermined depth on or within the ingot surface. However, this method has significant limitations: firstly, because the SiC ingot surface may have varying heights, static focusing cannot adapt to these changes, leading to inconsistent laser focus positions within the ingot and affecting the uniformity of the refining effect; secondly, during laser refining, the ingot surface may undergo dynamic changes due to thermal expansion, material removal, and other factors. Static focusing cannot adjust the focus position in real time, causing the focus to deviate from the predetermined depth and affecting the refining effect. Utility Model Content
[0004] The main purpose of this invention is to provide a crystal ingot stripping device that effectively reduces the roughness of the crystal ingot stripping surface and improves the quality of crystal ingot stripping.
[0005] To achieve the above objectives, the present invention provides a crystal ingot stripping device comprising:
[0006] A laser emitter for emitting a laser beam;
[0007] A dynamic focusing module includes a rangefinder, an objective lens, and a first motion module. The rangefinder is used to measure the height values at different positions on the surface of the ingot and is electrically connected to the first motion module. The objective lens is used to focus the laser beam to a predetermined depth inside the ingot. The first motion module is used to dynamically adjust the position of the objective lens according to the change in the height of the ingot surface.
[0008] A fixing component is used to fix the crystal ingot and is located below the objective lens. The fixing component is used to move the crystal ingot in the horizontal direction.
[0009] In one embodiment, the first motion module is a voice coil motor, which has a through hole for the laser beam to pass through, and the axis of the through hole is the optical axis of the laser beam; the objective lens is connected to the output end of the voice coil motor.
[0010] In one embodiment, the dynamic focusing module further includes a feedback control element, which is electrically connected to the rangefinder and the first motion module, and is used to adjust the position of the objective lens in real time according to the height value measured by the rangefinder.
[0011] In one embodiment, the ingot stripping device includes a pulse controller electrically connected to the laser emitter and controlling the wavelength of the laser beam to be 1064 nm.
[0012] In one embodiment, the pulse controller controls the pulse width of the laser beam to be between 10 ps and 10 ns, and the frequency to be between 10 kHz and 1000 kHz.
[0013] In one embodiment, the ingot stripping device includes a resistivity measuring instrument and a power regulator. The resistivity measuring instrument is disposed above the fixing assembly and is used to measure the resistivity at various points on the ingot. The power regulator is electrically connected to the resistivity measuring instrument and the laser emitter, respectively.
[0014] In one embodiment, the fixing component includes a second motion module, a third motion module, and a suction cup for fixing the crystal ingot. The output end of the second motion module is connected to the suction cup, and the output end of the third motion module is connected to the second motion module.
[0015] In one embodiment, the suction cup is a ceramic suction cup.
[0016] In one embodiment, the ingot stripping device includes an optical module, which includes a beam splitter, a beam expander, and a reflector arranged sequentially. The beam splitter is used to split the laser beam into multiple beams, the beam expander is used to increase the diameter of the laser beam, and the reflector is used to adjust the path of the laser beam to ensure that the laser beam is accurately focused on a predetermined position inside the ingot.
[0017] In one embodiment, the optical module further includes a beam quality monitor for real-time monitoring of the quality parameters of the laser beam.
[0018] In this technical solution, when using this ingot peeling device to peel SiC ingots, the SiC ingot to be processed is first placed on a fixed assembly. Then, a rangefinder is activated to scan the surface of the ingot, measuring the height values at different positions on the ingot surface. The measurement data is transmitted to the first motion module in the dynamic focusing module. The first motion module controls the movement of the driving objective lens based on the height values measured by the rangefinder, ensuring that the laser focus is always located at a predetermined depth inside the ingot. Simultaneously, the laser beam emitted by the laser emitter is focused by the objective lens and acts on the interior of the ingot, forming a modified layer. Through the precise control of the dynamic focusing module, the laser focus is always maintained at the predetermined depth inside the ingot, unaffected by height fluctuations on the ingot surface or dynamic changes during processing, thus ensuring the uniformity and quality of the modified layer. After the modification process is completed, efficient and high-quality peeling of the SiC ingot can be achieved through subsequent peeling processes. Attached Figure Description
[0019] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on the structures shown in these drawings without creative effort.
[0020] Figure 1 A schematic diagram of an embodiment of the crystal ingot stripping device provided by this utility model;
[0021] Figure 2 A schematic diagram of another embodiment of the crystal ingot stripping device of this utility model is provided;
[0022] Figure 3 A schematic diagram of a structure of one embodiment of the crystal stripping direction of this utility model is provided;
[0023] Figure 4 This invention provides a structural schematic diagram of an embodiment of the crystal ingot before it is peeled off.
[0024] Figure 5 A schematic diagram of a structure for an embodiment of the present invention for forming modified point cracks in an ingot;
[0025] Figure 6 This is a schematic diagram of the structure of one embodiment of the present invention after the crystal ingot is stripped.
[0026] Explanation of icon numbers:
[0027] 100. Ingot stripping device; 1. Laser emitter; 2. Dynamic focusing module; 21. Rangefinder; 22. Objective lens; 23. First motion module; 3. Fixing assembly; 31. Second motion module; 32. Third motion module; 33. Suction cup; 4. Resistivity measuring instrument; 5. Optical module; 51. Beam splitter; 52. Beam expander; 53. Reflector;
[0028] 200. Crystal ingot.
[0029] The realization of the purpose, functional features and advantages of this utility model will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. Detailed Implementation
[0030] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present utility model.
[0031] It should be noted that if the embodiments of this utility model involve directional indicators (such as up, down, left, right, front, back, etc.), the directional indicators are only used to explain the relative positional relationship and movement of the components in a specific posture. If the specific posture changes, the directional indicators will also change accordingly.
[0032] Furthermore, if the embodiments of this utility model involve descriptions such as "first" or "second," these descriptions are for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined with "first" or "second" may explicitly or implicitly include at least one of those features. Additionally, the use of "and / or" or "and / or" throughout the text includes three parallel solutions. For example, "A and / or B" includes solution A, solution B, or a solution where both A and B are satisfied simultaneously. Furthermore, the technical solutions of the various embodiments can be combined with each other, but this must be based on the ability of those skilled in the art to implement them. When the combination of technical solutions is contradictory or impossible to implement, it should be considered that such a combination of technical solutions does not exist and is not within the scope of protection claimed by this utility model.
[0033] This utility model proposes a crystal ingot stripping device 100.
[0034] Please see Figure 1 and Figure 2In one embodiment of this utility model, the ingot peeling device 100 includes a laser emitter 1, a dynamic focusing module 2, and a fixing component 3. The laser emitter 1 is used to emit a laser beam; the dynamic focusing module 2 includes a rangefinder 21, an objective lens 22, and a first motion module 23. The rangefinder 21 is used to measure the height values at different positions on the surface of the ingot 200 and is electrically connected to the first motion module 23. The objective lens 22 is used to focus the laser beam to a predetermined depth inside the ingot 200. The first motion module 23 is used to dynamically adjust the position of the objective lens 22 according to the change in the surface height of the ingot 200; the fixing component 3 is used to fix the ingot 200 and is located below the objective lens 22. The fixing component 3 is used to drive the ingot 200 to move in the horizontal direction.
[0035] In this technical solution, when using the ingot peeling device 100 to peel SiC ingot 200, the SiC ingot 200 to be processed is first placed on the fixing component 3. Then, the rangefinder 21 is activated to scan the surface of the ingot 200, measuring the height values at different positions on the surface of the ingot 200. The measurement data is then transmitted to the first motion module 23 in the dynamic focusing module 2. The first motion module 23 controls the movement of the objective lens 22 according to the height values measured by the rangefinder 21, ensuring that the laser focus is always located at a predetermined depth position inside the ingot 200. Simultaneously, the laser beam emitted by the laser emitter 1 is focused by the objective lens 22 and acts on the interior of the ingot 200, forming a modified layer. Through the precise control of the dynamic focusing module 2, the laser focus is always maintained at the predetermined depth position inside the ingot 200, unaffected by the height fluctuations on the surface of the ingot 200 or dynamic changes during the processing, thereby ensuring the uniformity and quality of the modified layer. After the modification processing is completed, the SiC ingot 200 can be peeled efficiently and with high quality through subsequent peeling processes.
[0036] The dynamic adjustment mechanism of the dynamic focusing module 2 is one of the key technologies of this device. Specifically, the rangefinder 21 measures the height values of different positions on the surface of the ingot 200 in real time and transmits these data to the first motion module 23. The first motion module 23 adjusts the position of the lens 22 accordingly based on these height data to ensure that the laser focus is always located at a predetermined depth inside the ingot 200. This real-time adjustment mechanism can effectively cope with the height fluctuations on the surface of the ingot 200 and the dynamic changes during the processing, ensuring that the position of the laser focus remains consistent. Through this dynamic adjustment mechanism, this device can significantly reduce the thickness difference at different positions of the peeled product, thereby improving the quality and consistency of the product.
[0037] The laser emitter 1 is used to emit a laser beam. The dynamic focusing module 2 is the core part of this device, which includes a rangefinder 21, an objective lens 22, and a first motion module 23. The rangefinder 21 is used to measure the height values at different positions on the surface of the ingot 200, and can acquire the three-dimensional height information of the surface of the ingot 200 in real time. The objective lens 22 is a high-magnification objective lens, which is used to focus the laser beam to a predetermined depth inside the ingot 200, ensuring that the laser energy can accurately act on a specific position inside the ingot 200. The first motion module 23 is connected to the objective lens 22 at its output end, and can keep the laser focus at a predetermined depth inside the ingot 200 based on the height data fed back by the rangefinder 21. This dynamic focusing method can effectively solve the problems existing in traditional static focusing and improve the uniformity and quality of the modification effect. The fixing component 3 is located below the objective lens 22, used to fix the SiC ingot 200 to be processed, and drive the ingot 200 to move in the horizontal direction, so as to realize the precise positioning and movement of the ingot 200 during the processing.
[0038] Please see Figure 3 , Figure 4 , Figure 5 as well as Figure 6 In the specific peeling process, the fixing component 3 first moves the ingot 200 along its length direction (i.e., Figure 4 The laser moves in the 1120 direction to form the first modification on the surface to be peeled. The wavelength of the modification laser is 1064nm, the single pulse energy is 10μJ to 50μJ, the frequency is 10kHz to 200kHz, and the pulse width is 10ps to 10ns. The moving speed of the fixed component 3 is 100mm / s to 2000mm / s. The modification path is a back-and-forth scribbling, and the spacing between the scribbling lines is 100μm to 500μm. After the modification line is formed in this direction, it will divide the surface to be peeled into rows of isolation zones, which will restrict the direction of the subsequent modification cracks in the 200 width direction of the ingot.
[0039] After completing the first step of modification, at the position to be peeled off, along the 200 width direction of the ingot (i.e. Figure 4Laser modification is performed in the 1100 direction to form a second modification line. The laser wavelength for modification is 1064nm, the single pulse energy is 10 to 50μJ, the frequency is 10kHz to 200kHz, and the pulse width is 10ps to 10ns. The moving speed of the fixed component 3 is 100mm / s to 2000mm / s. After the second modification is completed, it is repeated once to form a third modification to ensure that cracks are generated in all positions. The latter two modifications will generate cracks along the width direction of the ingot 200 with the modification line as the axis. The cracks form a 4° angle with the surface of the ingot 200. Due to the formation of the modification line in the length direction in advance, the direction of the cracks formed by the subsequent second and third modifications will be restricted to avoid the crack direction being messy, which would increase the roughness of the peeled surface and the wear of grinding and polishing after peeling. This modification method can effectively reduce the roughness of the peeled surface and reduce the wear of grinding and polishing. Specifically, this modification method can control the roughness Rz of the peeled surface within 20μm and the thickness loss of single-sided grinding and polishing within 60μm. The spacing of the cracks in the length direction can usually be controlled by controlling the spacing of the second or third modification lines, thereby controlling the width and height of the step after peeling. The denser the spacing of the cracks in the length direction, the smaller the step height, the smaller the surface roughness, and the smaller the amount of material removed by grinding.
[0040] Please see Figure 2 In one embodiment, the first motion module 23 is a voice coil motor (VRM). The VRM has a through-hole for the laser beam to pass through, and the axis of the through-hole is the optical axis of the laser beam. The objective lens 22 is connected to the output end of the VRM. The VRM's through-hole, with its axis coinciding with the optical axis of the laser beam, ensures that the laser beam is not deflected or interfered with when passing through the VRM, thus guaranteeing precise focusing. The VRM directly drives the objective lens 22 to adjust its position through its output end, thereby achieving dynamic control of the laser focus. This connection method not only ensures the stability of the objective lens 22 but also improves the adjustment accuracy and response speed. The rangefinder 21 measures the height values at different positions on the surface of the ingot 200 in real time and transmits this data to the control system of the VRM. Based on the height data fed back by the rangefinder 21, the VRM quickly adjusts the position of its output end, thereby moving the objective lens 22 along the optical axis. Due to the high precision and fast response characteristics of the VRM, the position adjustment of the objective lens 22 can be completed quickly and accurately. The high precision and fast response characteristics of the voice coil motor enable the dynamic focusing module 2 to adjust the position of the laser focus in real time and accurately, ensuring the uniformity and quality of the modified layer. The through-hole design of the voice coil motor and its direct connection with the objective lens 22 not only ensure the accurate transmission of the laser beam, but also improve the structural compactness and stability of the entire device. The dynamic focusing module 2 driven by the voice coil motor can effectively cope with the height fluctuations on the surface of the ingot 200 and the dynamic changes during the processing, and is particularly suitable for ingot 200 peeling processing under complex working conditions.
[0041] Furthermore, in one embodiment, the dynamic focusing module 2 also includes a feedback control unit. The feedback control unit is electrically connected to the rangefinder 21 and the first motion module 23, and is used to adjust the position of the objective lens 22 in real time according to the height value measured by the rangefinder 21. The rangefinder 21 measures the height values at different positions on the surface of the ingot 200 in real time and transmits these data to the feedback control unit. Based on these height data, the feedback control unit calculates the specific position that the voice coil motor needs to be adjusted using a complex algorithm, and sends a precise control signal to the voice coil motor. According to the instructions of the feedback control unit, the voice coil motor quickly adjusts the position of its output end, thereby moving the objective lens 22 along the optical axis, ensuring that the laser focus is always located at a predetermined depth position inside the ingot 200.
[0042] In one embodiment, the ingot stripping device 100 includes a pulse controller electrically connected to a laser emitter 1, which controls the wavelength of the laser beam to be 1064 nm. The laser emitter 1 emits a laser beam with a wavelength of 1064 nm. This wavelength of laser light has good absorption characteristics and penetration ability in SiC material, which can efficiently form a modified layer, while reducing energy scattering and reflection on the material surface, thereby improving processing accuracy and efficiency.
[0043] In one embodiment, the pulse controller controls the pulse width of the laser beam to be between 10 ps and 10 ns, and the frequency to be between 10 kHz and 1000 kHz. The pulse controller is used to precisely control the pulse width and frequency of the laser beam emitted by the laser emitter 1. By adjusting the parameters of the laser pulse, the laser energy transfer efficiency can be optimized, the heat-affected zone reduced, and processing speed and quality improved. The pulse controller can control the pulse width of the laser beam between 10 picoseconds (ps) and 10 nanoseconds (ns). Shorter pulse widths (e.g., 10 ps) can achieve extremely high processing accuracy and are suitable for forming modified layers requiring high resolution, while longer pulse widths (e.g., 10 ns) can provide sufficient energy and are suitable for thicker ingots 200 or scenarios requiring deeper modified layers. The pulse controller can control the frequency of the laser beam between 10 kHz and 1000 kHz. Higher frequencies (such as 1000 kHz) can achieve faster processing speeds and improve production efficiency, while lower frequencies (such as 10 kHz) can provide more stable energy output, which is suitable for scenarios with high processing quality requirements.
[0044] To further improve the quality of 200-layer wafer stripping, please refer to [link / reference]. Figure 2In one embodiment, the ingot peeling device 100 includes a resistivity measuring instrument 4 and a power regulator. The resistivity measuring instrument 4 is positioned above the fixing component 3 and is used to measure the resistivity at various points on the ingot 200. The power regulator is electrically connected to both the resistivity measuring instrument 4 and the laser emitter 1. The resistivity measuring instrument 4, positioned above the fixing component 3, measures the resistivity at various points on the ingot 200. Resistivity is a quantitative indicator of the conductivity of a material. By measuring the resistivity, the formation of the modified layer inside the ingot 200 and the uniformity of the material can be assessed. During processing, the resistivity measuring instrument 4 can monitor the resistivity changes at various points on the ingot 200 in real time and transmit the measurement data to the power regulator. The power regulator is electrically connected to both the resistivity measuring instrument 4 and the laser emitter 1. Its main function is to dynamically adjust the output power of the laser emitter 1 based on the data fed back from the resistivity measuring instrument 4. The power regulator can automatically adjust the laser power according to the resistivity changes at different locations on the ingot 200, ensuring that the laser energy output matches the actual requirements of the material, thereby improving processing efficiency and quality.
[0045] Please see Figure 1 and Figure 2 In one embodiment, the fixing component 3 includes a second motion module 31, a third motion module 32, and a suction cup 33 for fixing the ingot 200. The output end of the second motion module 31 is connected to the suction cup 33, and the output end of the third motion module 32 is connected to the second motion module 31. The suction cup 33 is used to fix the SiC ingot 200 to be processed, ensuring that the ingot 200 remains stable during processing. The suction cup 33 can firmly fix the ingot 200 in the processing position by vacuum adsorption or other fixing methods. The output end of the second motion module 31 is connected to the suction cup 33, and its main function is to drive the ingot 200 along its length direction (X direction, i.e., Figure 4 The second motion module 31 can achieve high-precision displacement control to ensure the precise positioning of the ingot 200 in the length direction; the output end of the third motion module 32 is connected to the second motion module 31, and its main function is to drive the ingot 200 along its width direction (Y direction, i.e., the direction of the ingot). Figure 4 The third motion module 32 can achieve high-precision displacement control to ensure the precise positioning of the crystal ingot 200 in the width direction. Through the coordinated work of the second motion module 31 and the third motion module 32, the crystal ingot 200 can move in two dimensions in the horizontal direction, thereby achieving precise positioning and movement of the crystal ingot 200 during the processing.
[0046] The complete working process of the ingot stripping device 100 is as follows: The SiC ingot 200 to be processed is placed on the chuck 33, and the ingot 200 is firmly fixed in the processing position by vacuum adsorption or other fixing methods. The third motion module 32 and the second motion module 31 work together to move the ingot 200 to the initial processing position. The resistivity measuring instrument 4 measures the resistivity at various points on the ingot 200 in real time and transmits the measurement data to the power regulator. Through resistivity measurement, the formation of the modified layer inside the ingot 200 and the uniformity of the material are evaluated, providing a basis for power adjustment. The power regulator adjusts the power according to the resistivity. The output power of the laser emitter 1 is dynamically adjusted based on the data fed back by the rate measuring instrument 4. Under the control of the pulse controller, the laser emitter 1 emits a laser beam with a wavelength of 1064nm. The pulse controller precisely controls the pulse width (10ps to 10ns) and frequency (10kHz to 1000kHz) of the laser beam according to process requirements. By adjusting the pulse width and frequency, the laser energy transfer efficiency is optimized, the heat-affected zone is reduced, and the processing speed and quality are improved. The rangefinder 21 measures the height values at different positions on the surface of the ingot 200 in real time and transmits these data to the feedback control unit. The feedback control unit then adjusts the output power based on the data fed back by the pulse controller. The height data fed back by the rangefinder 21 is used to calculate the specific position that the voice coil motor needs to be adjusted to through a built-in algorithm, and a precise control signal is sent to the voice coil motor. Based on the instructions from the feedback control unit, the voice coil motor quickly adjusts the position of its output end, thereby moving the objective lens 22 along the optical axis. Due to the high precision and fast response characteristics of the voice coil motor, the position adjustment of the objective lens 22 can be completed quickly and accurately. The laser beam passes through the through-hole of the voice coil motor, is focused by the objective lens 22, and acts on the predetermined depth inside the ingot 200. Because the voice coil motor can dynamically adjust the objective lens 22 according to the height changes on the surface of the ingot 200... Positioning: The laser focus is always maintained at a predetermined depth within the ingot 200, unaffected by surface undulations or dynamic changes during processing. During processing, the second motion module 31 and the third motion module 32 work together to move the ingot 200 along its length (X-direction) and width (Y-direction), achieving precise positioning and movement. Through multi-degree-of-freedom motion control, the laser beam covers the entire processing area of the ingot 200, forming a uniform modified layer. The laser beam forms a uniform modified layer within the ingot 200. After modification, a subsequent peeling process achieves efficient and high-quality peeling of the SiC ingot 200.
[0047] In one embodiment, the suction cup 33 is a ceramic suction cup 33. Ceramic materials possess high hardness and good wear resistance, enabling them to withstand mechanical stresses that may occur during processing, ensuring the long-term stable use of the suction cup 33. Ceramic materials are chemically stable and do not readily react with the SiC ingot 200 or the chemicals used in the processing, ensuring the purity of the processing. Ceramic materials have good thermal stability, enabling them to withstand high-temperature environments during processing, avoiding processing errors caused by thermal expansion or deformation. The ceramic suction cup 33 securely fixes the ingot 200 to the processing position through vacuum adsorption or other fixing methods, ensuring the stability of the ingot 200 during processing.
[0048] Please see Figure 1 In one embodiment, the ingot stripping device 100 includes an optical module 5. The optical module 5 includes a beam splitter 51, a beam expander 52, and a reflector 53 arranged sequentially. The beam splitter 51 is used to split the laser beam into multiple beams, the beam expander 52 is used to enlarge the diameter of the laser beam, and the reflector 53 is used to adjust the path of the laser beam to ensure that the laser beam is accurately focused on a predetermined position inside the ingot 200. The beam splitter 51 is used to split the laser beam emitted by the laser emitter 1 into multiple beams. By splitting the beam, multi-point simultaneous processing can be achieved, improving processing efficiency. The beam splitter 51 can split a laser beam into multiple sub-beams, which can act on different positions of the ingot 200 simultaneously, thereby achieving parallel processing and significantly improving processing speed. The beam expander 52 is used to enlarge the diameter of the laser beam. By expanding the beam, the divergence angle of the laser beam can be reduced, improving the transmission quality and focusing accuracy of the laser beam. The expanded laser beam can still maintain a small spot size after long-distance transmission, thereby improving processing accuracy and uniformity. The reflector 53 is used to adjust the path of the laser beam to ensure that the laser beam can be accurately focused on a predetermined position inside the ingot 200. The reflector 53 can precisely adjust the direction of the laser beam so that it reaches the objective lens 22 along the predetermined path. By adjusting the reflector 53, the transmission path of the laser beam can be flexibly controlled to ensure that the laser beam can accurately act on a specific position inside the ingot 200, thereby improving the flexibility and accuracy of the processing.
[0049] In one embodiment, the optical module 5 further includes a beam quality monitor for real-time monitoring of the laser beam's quality parameters. The beam quality monitor monitors the laser beam's quality parameters in real-time, including beam intensity, divergence angle, and spot size. Real-time monitoring of these parameters ensures that the laser beam remains in optimal condition throughout the processing. By monitoring the laser beam's quality parameters in real-time, abnormal conditions can be detected and adjusted promptly, ensuring the stability and consistency of the processing. The beam quality monitor provides real-time feedback, helping to optimize laser beam transmission and focusing, further improving processing quality.
[0050] The above description is merely an exemplary embodiment of the present utility model and does not limit the patent scope of the present utility model. Any equivalent structural transformations made based on the technical concept of the present utility model and the contents of the present utility model specification and drawings, or direct / indirect applications in other related technical fields, are included within the patent protection scope of the present utility model.
Claims
1. A crystal ingot stripping device, characterized in that, include: A laser emitter for emitting a laser beam; A dynamic focusing module includes a rangefinder, an objective lens, and a first motion module. The rangefinder is used to measure the height values at different positions on the surface of the ingot and is electrically connected to the first motion module. The objective lens is used to focus the laser beam to a predetermined depth inside the ingot. The first motion module is used to dynamically adjust the position of the objective lens according to the change in the height of the ingot surface. A fixing component is used to fix the crystal ingot and is located below the objective lens. The fixing component is used to move the crystal ingot in the horizontal direction.
2. The ingot stripping device as described in claim 1, characterized in that, The first motion module is a voice coil motor, which has a through hole for the laser beam to pass through, and the axis of the through hole is the optical axis of the laser beam; the objective lens is connected to the output end of the voice coil motor.
3. The ingot stripping device as described in claim 1, characterized in that, The dynamic focusing module also includes a feedback control unit, which is electrically connected to the rangefinder and the first motion module, and is used to adjust the position of the objective lens in real time according to the height value measured by the rangefinder.
4. The ingot stripping apparatus according to any one of claims 1 to 3, characterized in that, The ingot stripping device includes a pulse controller, which is electrically connected to the laser emitter and controls the wavelength of the laser beam to be 1064nm.
5. The ingot stripping device as described in claim 4, characterized in that, The pulse controller controls the pulse width of the laser beam to be between 10 ps and 10 ns, and the frequency to be between 10 kHz and 1000 kHz.
6. The ingot stripping apparatus according to any one of claims 1 to 3, characterized in that, The ingot stripping device includes a resistivity measuring instrument and a power regulator. The resistivity measuring instrument is located above the fixed assembly and is used to measure the resistivity at various points on the ingot. The power regulator is electrically connected to the resistivity measuring instrument and the laser emitter, respectively.
7. The ingot stripping apparatus according to any one of claims 1 to 3, characterized in that, The fixing component includes a second motion module, a third motion module, and a suction cup for fixing the crystal ingot. The output end of the second motion module is connected to the suction cup, and the output end of the third motion module is connected to the second motion module.
8. The ingot stripping apparatus as described in claim 7, characterized in that, The suction cup is a ceramic suction cup.
9. The ingot stripping apparatus according to any one of claims 1 to 3, characterized in that, The ingot stripping device includes an optical module, which includes a beam splitter, a beam expander, and a reflector arranged in sequence. The beam splitter is used to split the laser beam into multiple beams, the beam expander is used to increase the diameter of the laser beam, and the reflector is used to adjust the path of the laser beam to ensure that the laser beam is accurately focused on a predetermined position inside the ingot.
10. The ingot stripping apparatus as described in claim 9, characterized in that, The optical module also includes a beam quality monitor, which is used to monitor the quality parameters of the laser beam in real time.