Master alloy preparation device
By rapidly reducing the temperature of the silicon solution using ultra-cold components, the problems of long preparation time and high cost of high-concentration master alloys have been solved, achieving efficient master alloy preparation and increasing production capacity.
Patent Information
- Application Number
- CN202422752532.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-12
- Publication Date
- 2025-10-31
- Estimated Expiration
- 2034-11-12
AI Technical Summary
In the process of preparing high-concentration master alloys, long-term pulling leads to high processing costs, and high-concentration dopants affect crystal formation, resulting in a decrease in production capacity.
By employing an ultra-cold component to rapidly reduce the temperature of the silicon solution within the carrier, and through the combined use of heating and cooling components, a high-concentration master alloy can be rapidly crystallized.
This reduces the preparation time of high-concentration master alloys, lowers processing costs, and increases production capacity.
Smart Images
Figure CN223496701U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of solar cell manufacturing technology, and in particular to a master alloy preparation apparatus. Background Technology
[0002] Currently, Czochralski-grown monocrystalline silicon is divided into P-type and N-type, with resistivity requirements. The P-type and resistivity are controlled by adding a master alloy during the Czochralski-grown monocrystalline silicon production process. The master alloy for P-type is composed of trivalent elements B, Al, Ga, and In; the master alloy for N-type is composed of pentavalent elements N, P, As, and Sb.
[0003] Currently, commonly used master alloys are B, Ga, P, As, and Sb. Except for Ga, the other elements require the preparation of high-concentration master alloys first. This involves adding high concentrations of the corresponding dopants to polycrystalline silicon, first preparing a single crystal using the Czochralski method, and then processing it into alloy blocks or granules.
[0004] In the process of preparing high-concentration master alloys, the long pulling process is required, resulting in high processing costs. Furthermore, the high concentration of dopants can affect crystal formation during the pulling process, impacting production capacity and increasing the cost of the master alloy. Utility Model Content
[0005] Based on this, a master alloy preparation device is provided, which rapidly reduces the temperature of the silicon solution in the carrier through an ultra-cooling component, thereby preparing a high-concentration master alloy. Compared with the crystal pulling process, this application reduces the preparation time of the high-concentration master alloy, reduces processing costs, and increases production capacity.
[0006] Therefore, this application provides a master alloy preparation apparatus, comprising: a carrier having an inner cavity for containing a solution; a heating assembly disposed outside the carrier and used to heat the solution within the carrier; and an extreme cooling assembly including a cooling element and a driving element, the output end of the driving element being connected to the cooling element, the driving element being used to drive the cooling element to extend into or out of the inner cavity of the carrier; in a first state, the driving element drives the cooling element to extend out of the inner cavity of the carrier, and the heating assembly heats the solution within the carrier; in a second state, the heating assembly stops heating, and the driving element drives the cooling element to extend into the inner cavity of the carrier and cool the solution within the carrier.
[0007] In one embodiment, the cooling element includes an ultra-cold layer, the ultra-cold layer having an inner cavity for loading coolant, and the ultra-cold layer also having a port for the coolant to enter or exit.
[0008] In one embodiment, the extreme cold layer is arranged in a ring shape.
[0009] In one embodiment, the ultracold layer is arranged in an open ring, and the opening angle of the ultracold layer is less than or equal to 90°.
[0010] In one embodiment, the cooling element includes a protective sleeve adapted to the ultracold layer, the inner cavity of which is used to house the ultracold layer.
[0011] In one embodiment, the carrier has a protrusion extending into the cavity of the ultracold layer.
[0012] In one embodiment, a cover is provided at the carrier port, and the cover is provided with a relief opening adapted to the cooling component, the relief opening allowing the cooling component to extend or extend.
[0013] In one embodiment, a housing is also included, in which the carrier and the heating assembly are located, and the drive is connected to the housing.
[0014] In one embodiment, a sealing cavity is provided on the side wall of the housing, and an inert gas is introduced into the sealing cavity.
[0015] In one embodiment, an insulation layer is provided between the outer peripheral side of the heating component and the inner wall of the housing.
[0016] According to the master alloy preparation apparatus provided in the embodiments of this application, the master alloy preparation apparatus includes a carrier, a heating component, and an ultracooling component; the carrier is provided with an inner cavity for containing a solution; the heating component is disposed outside the carrier and heats the solution inside the carrier; the ultracooling component includes a cooling component and a driving component, the output end of the driving component is connected to the cooling component, and the driving component is used to drive the cooling component to extend into or out of the inner cavity of the carrier; in a first state, the driving component drives the cooling component to extend out of the inner cavity of the carrier, and the heating component heats the solution inside the carrier; in a second state, the heating component stops heating, and the driving component drives the cooling component to extend into the inner cavity of the carrier and cool the solution inside the carrier. This application rapidly reduces the temperature of the silicon solution inside the carrier by using an ultracooling component, thereby preparing a high-concentration master alloy. Compared with the crystal pulling process, this application reduces the preparation time of the high-concentration master alloy, reduces processing costs, and increases production capacity. Attached Figure Description
[0017] Figure 1 A schematic diagram of the master alloy preparation equipment provided in the embodiment is shown in the first state.
[0018] Figure 2 A schematic diagram of the master alloy preparation equipment provided in the embodiment is shown in the second state;
[0019] Figure 3 A schematic diagram of the structure of the first cooling component provided in the embodiment is shown;
[0020] Figure 4 A schematic diagram of the structure of the second cooling component provided in the embodiment is shown;
[0021] Figure 5 A schematic diagram of the carrier and cooling component provided in the embodiment is shown.
[0022] Explanation of reference numerals in the attached figures:
[0023] 1. Carrier; 11. Protrusion; 2. Heating component; 21. Heating element; 22. Support component; 3. Extreme cooling component; 31. Cooling component; 311. Extreme cooling layer; 3111. Through port; 312. Protective sleeve; 32. Driving component; 4. Housing; 41. Sealing cavity; 5. Insulation layer. Detailed Implementation
[0024] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.
[0025] It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of this utility model. Therefore, the drawings only show the components related to this utility model and are not drawn according to the actual number, shape and size of the components. In actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.
[0026] The structures, proportions, sizes, etc., illustrated in the accompanying drawings of this specification are only for the purpose of assisting those skilled in the art in understanding and reading the content disclosed in the specification, and are not intended to limit the implementation conditions of this utility model. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in the proportional relationships, or adjustments to the size, without affecting the effects and purposes that this utility model can produce, should still fall within the scope of the technical content disclosed in this utility model.
[0027] The orientations or positional relationships indicated by terms such as "upper," "lower," "left," "right," "middle," "longitudinal," "transverse," "horizontal," "inner," "outer," "radial," and "circumferential" used in this specification are based on the orientations or positional relationships shown in the accompanying drawings and are only for the purpose of simplifying the description. They do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.
[0028] Before preparing single-crystal silicon rods, a master alloy consisting of dopants and silicon can be prepared first. Then, the master alloy and silicon are melted and pulled into single-crystal silicon rods using a single-crystal furnace. In the preparation of high-concentration master alloys, the long pulling process results in high processing costs. Furthermore, high-concentration dopants can undergo segregation and volatilization during the pulling process, affecting the crystal formation of the master alloy, impacting production capacity, and increasing the cost of the master alloy.
[0029] To solve the above problems, refer to Figure 1 and Figure 2 , Figure 1 The diagram shows a schematic representation of the master alloy preparation equipment provided in the embodiment in its first state. Figure 2 A schematic diagram of the master alloy preparation equipment provided in the embodiment is shown in the second state.
[0030] This application provides a master alloy preparation apparatus, which includes a carrier 1, a heating component 2, and an ultracooling component 3. The carrier 1 has an inner cavity for containing a solution. The heating component 2 is located outside the carrier 1 and heats the solution inside the carrier 1. The ultracooling component 3 includes a cooling element 31 and a driving element 32. The output end of the driving element 32 is connected to the cooling element 31, and the driving element 32 is used to drive the cooling element 31 to extend into or out of the inner cavity of the carrier 1. In a first state, the driving element 32 drives the cooling element 31 to extend out of the inner cavity of the carrier 1, and the heating component 2 heats the solution inside the carrier 1. In a second state, the heating component 2 stops heating, and the driving element 32 drives the cooling element 31 to extend into the inner cavity of the carrier 1 and cool the solution inside the carrier 1.
[0031] It should be understood that this application does not limit the shape of the carrier 1. The carrier 1 can be a cuboid, cylinder, frustum, or bowl shape with an open inner cavity. The inner cavity of the carrier 1 is used to hold the silicon solution. The carrier 1 is made of two layers. In order to make the inner material quartz to reduce the impact on the silicon solution, the outer material of the carrier 1 can be graphite, carbon-carbon, or silicon carbide to support the quartz layer.
[0032] The heating assembly 2 includes heating elements 21 and a support member 22. The heating elements 21 are made of graphite or carbon ceramic. Multiple heating elements 21 are provided and spaced apart on the outer periphery of the carrier 1 to heat the silicon solution inside the carrier 1. The support member 22 is connected to the heating elements 21 and is made of high-temperature resistant and silicon vapor corrosion resistant materials such as graphite, carbon-carbon, or carbon ceramic, and is used to provide support for the heating elements 21.
[0033] The ultra-cooling component 3 includes a cooling element 31 and a driving element 32. The temperature of the cooling element 31 is lower than the temperature of the heated silicon solution, so as to cool the silicon solution. The driving element 32 can be a cylinder, hydraulic cylinder, linear drive motor, or lead screw slide, etc., and can be used to drive the cooling element 31 into or out of the inner cavity of the carrier 1. Since the inner cavity of the carrier 1 opens upward, when the cooling element 31 extends out of the inner cavity of the carrier 1, the cooling element 31 is located above the carrier 1.
[0034] The following example illustrates the preparation of an antimony master alloy. In the first state, the driving component 32 drives the cooling component 31 to extend out of the inner cavity of the carrier 1. Then, pure antimony (Sb) particles are placed below the silicon material block, and small silicon fragments (2mm-10mm) are used to cover them to reduce the volatilization of antimony at high temperatures. Then, the heating element 21 of the heating component 2 heats the material, raising the temperature inside the carrier 1 to above 1400 degrees Celsius to form a silicon solution. After the silicon material has completely solidified, the second state begins. The heating component 2 stops heating, and the driving component 32 drives the cooling component 31 to extend into the inner cavity of the carrier 1, thereby causing the silicon solution to crystallize rapidly and form a silicon alloy with a high concentration of antimony.
[0035] This application involves melting silicon ingots and pure antimony particles, then directly cooling the silicon solution via a cooling element 31. This allows the silicon solution to crystallize rapidly, increasing the crystallization rate by more than 10 times compared to the crystal pulling process. Compared to the crystal pulling process, this application reduces preparation time, increases production capacity, and lowers manufacturing costs. The master alloy preparation method of this application is not only suitable for antimony but can also be used to prepare other elements that require prior preparation into high-concentration master alloys.
[0036] Reference Figure 3 and Figure 4 , Figure 3 This diagram shows a structural schematic of the first cooling component provided in the embodiment. Figure 4 A schematic diagram of the structure of the second type of cooling component provided in the embodiment is shown.
[0037] In some optional embodiments, the cooling element 31 includes an ultracold layer 311, which has an inner cavity for loading coolant and an outlet 3111 for coolant to enter or exit. The ultracold layer 311 has an inner cavity for loading coolant, which can be water or other coolable liquids; this application does not limit this. The ultracold layer 311 is made of stainless steel to allow the coolant to flow smoothly within it. This application does not limit the shape of the ultracold layer 311; it can be any shape, such as a cylinder, cuboid, or ring, with an inner cavity. The ultra-cooled layer 311 is provided with two ports 3111 for the inlet or outlet of coolant. One port is an inlet and the other is an outlet. The inlet is connected to the inlet pipe and the outlet is connected to the outlet pipe. Both the inlet and outlet are located at the upper end of the ultra-cooled layer 311 to facilitate the inlet or outlet of coolant.
[0038] When the cooling component 31 extends into the inner cavity of the carrier 1, the coolant in the inlet pipe flows into the inner cavity of the ultra-cold layer 311 through the inlet port. The coolant exchanges heat with the silicon solution in the inner cavity of the carrier 1. After the heat exchange, the coolant flows out of the outlet pipe from the outlet port, so that the coolant circulates in the ultra-cold layer 311 to ensure the temperature of the cooling component 31, thereby ensuring the cooling effect on the carrier 1.
[0039] In some optional embodiments, the ultracold layer 311 is arranged in a ring shape, and the inner cavity of the ultracold layer 311 is also arranged in a ring shape. The ring shape of the ultracold layer 311 can increase the contact area between the ultracold layer 311 and the silicon solution, thereby improving the heat exchange effect between the ultracold layer 311 and the silicon solution. At the same time, the ultracold layer 311 divides the carrier 1 into several chambers, which further facilitates improving the heat exchange effect between the ultracold layer 311 and the carrier 1.
[0040] Reference Figure 4 In some optional embodiments, the ultracold layer 311 is arranged in an open ring, and the opening angle of the ultracold layer 311 is less than or equal to 90°. That is, the included angle between the two end faces of the opening of the ultracold layer 311 is less than or equal to 90°. Or, the central angle corresponding to the opening of the ultracold layer 311 is less than or equal to 90°. The inner cavity of the ultracold layer 311 is also conformally arranged to the ultracold layer 311. The angle setting of the ultracold layer 311 avoids the opening of the ultracold layer 311 being too large, which would affect the heat exchange effect between the cooling element 31 and the silicon solution in the carrier 1.
[0041] In some optional embodiments, the cooling element 31 includes a protective sleeve 312 adapted to the ultra-cold layer 311, the inner cavity of which is used to accommodate the ultra-cold layer 311. The protective sleeve 312 is conformally configured to the cooling element 31; when the cooling element 31 is annular, the protective sleeve 312 is annular; when the cooling element 31 is an open ring, the protective sleeve 312 is an open ring. The protective sleeve 312 has an inner cavity adapted to the ultra-cold layer 311, and its upper end is open to allow the ultra-cold layer 311 to be inserted into the inner cavity of the protective sleeve 312. To prevent the ultra-cold layer 311 from detaching from the inner cavity of the protective sleeve 312, a fixing member is also provided above the protective sleeve 312, with its two ends connected to the two side walls of the protective sleeve 312, respectively. The protective sleeve 312 is made of high-purity quartz, and the part of the protective sleeve 312 that comes into contact with the silicon solution is coated with a silicon carbide coating, thereby ensuring that it separates from the cooling component 31 after the silicon solution crystallizes.
[0042] Reference Figure 5 , Figure 5 A schematic diagram of the carrier and cooling element provided in the embodiment is shown. In some optional embodiments, a protrusion 11 protrudes from the carrier 1 and extends into the inner cavity of the ultra-cooled layer 311. The protrusion 11 of the carrier 1 is made of the same material as the carrier 1, and the protrusion 11 is integrally formed with the carrier 1. The protrusion 11 can further divide the inner cavity of the carrier 1 into sections, so that the cooling element 31 can cool the silicon solution of the carrier 1 in sections, thereby improving the cooling effect of the cooling element 31 on the silicon solution of the carrier 1.
[0043] In some optional embodiments, a cover (not shown in the figure) is provided at the port of the carrier 1. The cover has a relief opening adapted to the cooling element, allowing the cooling element 31 to extend into or out. When the heating assembly 2 heats the silicon solution in the carrier 1, the cooling element 31 extends out of the inner cavity of the carrier 1, and the cover covers the inner cavity of the carrier 1 to reduce the volatilization of antimony or other elements during heating and increase the concentration of the master alloy.
[0044] If the cooling component 31 is arranged in a ring shape, the clearance opening of the cover is arranged in a circular shape, resulting in a smaller coverage area of the cover on the carrier 1.
[0045] However, if the cooling component 31 is set in an open ring, the clearance opening of the cover is also set in an open ring, which increases the coverage area of the cover on the carrier 1.
[0046] Reference Figure 1 and Figure 2In some optional embodiments, a housing 4 is also included, in which the carrier 1 and the heating component 2 are located, and the driving component 32 is connected to the housing 4. The housing 4 can protect and support the carrier 1 and the heating component 2, thereby improving their service life. At the same time, the housing 4 can also improve the heat preservation effect on the carrier 1, thereby improving the melting effect of the material on the carrier 1.
[0047] In some optional embodiments, a sealing cavity 41 is provided on the side wall of the housing 4, and an inert gas is introduced into the sealing cavity 41. The sealing cavity 41 of the housing 4 can be used to control the internal pressure to facilitate the melting of the material in the carrier 1, for example, when making antimony master alloy, the internal pressure is controlled at 5 kPa. The inert gas can be argon or the like, and this application is not limited thereto.
[0048] In some optional embodiments, a heat insulation layer 5 is provided between the outer periphery of the heating component 2 and the inner wall of the housing 4. When the heating component 2 heats the carrier 1, the heat insulation layer 5 can reduce heat loss, improve the melting effect of the substance in the carrier 1, further reduce the heating effect, and shorten the heating time.
[0049] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.
[0050] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the utility model patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.
Claims
1. A master alloy preparation apparatus, characterized in that, include: The carrier (1) is provided with an inner cavity for containing the solution; Heating component (2), disposed outside the carrier (1) and used to heat the solution inside the carrier (1); and The ultra-cooling component (3) includes a cooling element (31) and a driving element (32). The output end of the driving element (32) is connected to the cooling element (31). The driving element (32) is used to drive the cooling element (31) to extend into or out of the inner cavity of the carrier (1). In the first state, the driving member (32) drives the cooling member (31) to extend out of the inner cavity of the carrier (1), and the heating component (2) heats the solution in the carrier (1); In the second state, the heating component (2) stops heating, and the driving member (32) drives the cooling member (31) to extend into the inner cavity of the carrier (1) and cool the solution in the carrier (1).
2. The master alloy preparation apparatus according to claim 1, characterized in that, The cooling component (31) includes an ultra-cooling layer (311), which has an inner cavity for loading coolant and an outlet (3111) for the coolant to enter or exit.
3. The master alloy preparation apparatus according to claim 2, characterized in that, The ultracold layer (311) is arranged in a ring shape.
4. The master alloy preparation apparatus according to claim 2, characterized in that, The ultracold layer (311) is arranged in an open ring, and the opening angle of the ultracold layer (311) is less than or equal to 90°.
5. The master alloy preparation apparatus according to claim 2, characterized in that, The cooling component (31) includes a protective sleeve (312) adapted to the ultra-cooled layer (311), the inner cavity of which is used to cover the ultra-cooled layer (311).
6. The master alloy preparation apparatus according to claim 2, characterized in that, The carrier (1) has a protrusion (11) that extends into the cavity of the ultra-cold layer (311).
7. The master alloy preparation apparatus according to claim 1, characterized in that, The carrier (1) is provided with a cover at its port, and the cover is provided with a relief opening adapted to the cooling component (31), the relief opening allowing the cooling component (31) to extend or extend.
8. The master alloy preparation apparatus according to claim 1, characterized in that, It also includes a housing (4), in which the carrier (1) and the heating assembly (2) are located, and the drive unit (32) is connected to the housing (4).
9. The master alloy preparation apparatus according to claim 8, characterized in that, The side wall of the housing (4) is provided with a sealing cavity (41), and an inert gas is introduced into the sealing cavity (41).
10. The master alloy preparation apparatus according to claim 8, characterized in that, A heat insulation layer (5) is provided between the outer periphery of the heating component (2) and the inner wall of the housing (4).