Chip resistor based on thin-film resistor

Abstract

The utility model provides a chip resistor based on a thin-film resistor. The chip resistor comprises a substrate, a pair of back electrodes, a pair of front electrodes, a resistive layer, a protective layer and side electrodes, the resistive layer is composed of a thin-film resistor formed by vacuum sputtering, and the resistive layer is covered between the front electrodes; the protective layer comprises a first protective layer and a second protective layer; the first protective layer is composed of aluminum oxide formed by vacuum sputtering, and the second protective layer covers the first protective layer; a front electrode is manufactured on a substrate by adopting a thick film printing process, then a thin film layer is correspondingly formed by vacuum sputtering, a material with resistivity is deposited on an insulating substrate, a resistive layer with thinner thickness is formed, the resistance value is controlled, and compared with a traditional resistor, the thin-film resistor has the advantages of low manufacturing cost, high economic benefit, low cost and the like. The stability is good, the temperature coefficient is low, and the noise is low.

Description

Technical Field

[0001] This utility model relates to the field of resistor technology, and more specifically, to a chip resistor based on a thin-film resistor. Background Technology

[0002] Currently, resistors are widely used in many fields such as consumer electronics, communication equipment, and other electrical appliances. Depending on the specific application requirements, resistors with different sizes, resistance values, and accuracy parameters can be selected. They are mainly used for managing, protecting, and controlling circuits.

[0003] In existing resistors, the structural layer inside the resistor is usually formed by screen printing. Especially in the resistive layer, it is very easy to form a thick film layer with many particles in the printed layer, which are irregularly arranged and thus have high parasitic resistance. Utility Model Content

[0004] In view of this, the purpose of this utility model is to provide a chip resistor based on a thin-film resistor to solve the above problems.

[0005] The present invention adopts the following solution:

[0006] This application provides a chip resistor based on a thin-film resistor, including a substrate, a pair of back electrodes, a pair of front electrodes, a resistive layer, a protective layer, and side electrodes; the resistive layer is composed of a thin-film resistor formed by vacuum sputtering, and the resistive layer covers the front electrodes; the protective layer includes a first protective layer and a second protective layer; the first protective layer is composed of aluminum oxide formed by vacuum sputtering, and the second protective layer covers the first protective layer.

[0007] As a further improvement, the thin-film resistor is formed into a corresponding resistive layer, and the aluminum oxide is formed into a first protective layer attached to the resistive layer.

[0008] As a further improvement, the resistive layer is made of nickel-chromium-silicon material, and the second protective layer is made of epoxy resin material.

[0009] As a further improvement, the vacuum sputtering is a magnetron sputtering method, and the substrate is placed in a fixture with an oblong hole so that it moves with the fixture to deposit a thin film structure.

[0010] As a further improvement, magnetron sputtering uses the combined action of electric and magnetic fields to deflect positively charged argon ions and the desired electrons stripped from the target material, forming a preset trajectory and depositing them on the substrate to create a thin film layer.

[0011] As a further improvement, the fixture reciprocates along the moving path at a conveying speed of 10 mm / s, and the sputtering time is negatively correlated with the resistance value.

[0012] As a further improvement, the side electrodes are respectively disposed on opposite sides of the substrate for electrode connection between the front electrode and the corresponding back electrode.

[0013] As a further improvement, a nickel plating layer is also included; the nickel plating layer completely covers the back electrode, side electrode and front electrode.

[0014] As a further improvement, a tin plating layer is also included; the tin plating layer covers the nickel plating layer and overlaps the end face of the second protective layer.

[0015] By adopting the above technical solution, the present invention can achieve the following technical effects:

[0016] 1. The chip resistor based on thin film resistor of this application uses a thick film printing process to fabricate the front electrode on the substrate, and then uses vacuum sputtering to form a corresponding thin film layer, depositing a resistive material on an insulating substrate to form a resistor layer with a thinner thickness, thereby realizing the control of the resistance value. Compared with traditional resistors, this thin film resistor has advantages such as low manufacturing cost, high economic efficiency, good stability, low temperature coefficient and low noise. With the continuous development of the electronics industry, the demand for high-performance and miniaturized electronic components is also increasing, and thin film resistors are better able to meet the increasingly severe market demand.

[0017] 2. In order to adapt to thin film resistors, a first protective layer is further formed on the resistor layer by vacuum sputtering, and a second protective layer is formed on the first protective layer. On the one hand, the vacuum sputtered first protective layer can effectively cooperate with the thin film resistor, greatly reduce the overall thickness and improve the adhesion between the two. On the other hand, the double protective layer structure can effectively prevent water vapor penetration and improve the stability and reliability of the resistor in humid environments. Attached Figure Description

[0018] Figure 1 This is a schematic diagram of the structure of a chip resistor based on a thin-film resistor according to an embodiment of the present invention;

[0019] Figure 2 This is a schematic diagram of a chip resistor based on a thin-film resistor in a vacuum / magnetron sputtering scenario according to an embodiment of this utility model;

[0020] Figure 3 This is a schematic diagram of the fixture for a chip resistor based on a thin-film resistor according to an embodiment of the present invention;

[0021] Figure 4This is a process flow diagram of a chip resistor based on a thin-film resistor according to an embodiment of this utility model.

[0022] Icons: 1-Substrate; 2-Back electrode; 3-Front electrode; 4-Resistor layer; 5-Side electrode; 6-First protective layer; 7-Second protective layer; 8-Nickel plating layer; 9-Tin plating layer; A-Jig; A1-Oval hole. Detailed Implementation

[0023] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions of the embodiments of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this utility model. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this utility model. Therefore, the following detailed description of the embodiments of this utility model provided in the accompanying drawings is not intended to limit the scope of the claimed utility model, but merely to represent selected embodiments of this utility model.

[0024] Example

[0025] Combination Figures 1 to 4 This embodiment provides a chip resistor based on thin film resistance, including a substrate 1, a pair of back electrodes 2, a pair of front electrodes 3, a resistive layer 4, a protective layer, and a side electrode 5.

[0026] The resistive layer 4 is composed of a thin-film resistor formed by vacuum sputtering, and the resistive layer 4 covers the front electrodes 3. The protective layer includes a first protective layer 6 and a second protective layer 7. The first protective layer 6 is composed of aluminum oxide formed by vacuum sputtering, and the second protective layer 7 covers the first protective layer 6.

[0027] The aforementioned chip resistor based on thin film resistors uses a thick film printing process to fabricate the front electrode 3 on a substrate 1, and then uses vacuum sputtering to form a corresponding thin film layer, depositing a resistive material on an insulating substrate to form a thinner resistive layer 4, thus achieving control over the resistance value. Compared with traditional resistors, this thin film resistor has advantages such as low manufacturing cost, high economic efficiency, good stability, low temperature coefficient, and low noise. With the continuous development of the electronics industry, the demand for high-performance and miniaturized electronic components is also increasing, and thin film resistors are better able to meet the increasingly stringent market demands.

[0028] In particular, in order to adapt to the thin film resistor, a first protective layer 6 is further formed on the resistor layer 4 by vacuum sputtering, and a second protective layer 7 is formed on the first protective layer 6. On the one hand, the vacuum sputtered first protective layer 6 can effectively cooperate with the thin film resistor, greatly reduce the overall thickness and improve the adhesion between the two. On the other hand, the double protective layer structure can effectively prevent water vapor penetration and improve the stability and reliability of the resistor in a humid environment.

[0029] It should be noted that in the prior art, the thickness of the resistive layer 4 is above 20 μm, and the thickness of the protective layer is between 8 μm and 9 μm. However, the thin-film resistor in this embodiment is defined as having a film thickness of less than 1 μm, which is thinner than the existing resistive layer 4.

[0030] In this embodiment, the thin-film resistor is formed with a corresponding resistive layer 4, and the alumina is formed with a corresponding first protective layer 6 bonded to the resistive layer 4. Preferably, the resistive layer 4 and the first protective layer 6 can be configured to have the same thickness. The resistive layer 4 is made of nickel-chromium-silicon material, and the second protective layer 7 is made of epoxy resin. The epoxy resin second protective layer 7 has good electrical insulation properties, avoiding the risk of resistor failure due to leakage or short circuit, ensuring stable electrical performance, and the double-layer protection structure enables the resistor to resist environmental factors for a long time, reducing performance degradation caused by changes in the external environment, thereby greatly extending the product's service life.

[0031] It is worth mentioning that when sputtering the resistive layer, a nickel-chromium target is used because the material has low resistivity, resulting in a thinner resistive layer after sputtering. Alternatively, a resistive layer material with relatively high resistivity can be selected, leading to a thicker sputtered film.

[0032] like Figure 2 and Figure 3 As shown, in this embodiment, the vacuum sputtering is magnetron sputtering, and the substrate 1 is placed in the fixture A with a waist-shaped hole A1 so as to move with the fixture A to deposit a thin film structure.

[0033] It should be mentioned that magnetron sputtering uses the combined action of electric and magnetic fields to deflect positively charged argon ions and the desired electrons stripped from the target material, forming a preset trajectory and depositing them on the substrate 1 to create a thin film layer.

[0034] Preferably, the fixture A reciprocates along the moving path at a conveying speed of 10 mm / s, and the sputtering time is negatively correlated with the resistance value. The sputtering time varies depending on the resistance value; the lower the resistance, the longer the sputtering time. In this embodiment, the sputtering time is preferably 85 minutes or more. Reducing the conveying speed of fixture A increases the number of target atoms sputtered at a specific angle to the included angle, thereby reducing the effects of shading, self-shading, and angle dependence, which helps to improve the film thickness on the sides and bottom of the pattern.

[0035] And, as Figure 2 As shown, the bidirectional reciprocating motion during sputtering allows the fixture A and substrate 1 to move from "A" to "B" and then back from "A" to "B", sputtering the substrate 1 from different directions. This reduces the effects of shadowing, self-shadowing, and angle dependence, and helps improve the uniformity of the film layer on the sides and bottom of the pattern.

[0036] like Figure 1 As shown, in this embodiment, the side electrodes 5 are respectively disposed on opposite sides of the substrate 1, and are used for electrode connection between the front electrode 3 and the corresponding back electrode 2. It should be noted that the side electrodes 5 are the electrode connection method in existing resistors, so they will not be described in detail here.

[0037] In this embodiment, the surface mount resistor further includes a nickel plating layer 8. The nickel plating layer 8 completely covers the back electrode 2, the side electrode 5, and the front electrode 3. Furthermore, the surface mount resistor also includes a tin plating layer 9. The tin plating layer 9 covers the nickel plating layer 8 and overlaps the end face of the second protective layer 7. It should be noted that the tin plating layer 9 and the nickel plating layer 8 are existing structures and will not be described in detail here.

[0038] like Figure 4 As shown, the fabrication process of the chip resistor in this embodiment is as follows: C2 (back electrode) printing → C1 (front electrode) printing → sintering at 850℃ → R (resistive layer) mask printing → R sputtering → protective layer sputtering → heat treatment → ultrasonic cleaning → spin drying → laser repair → G2 (second protective layer) printing → sintering at 220℃... and so on.

[0039] The above are merely preferred embodiments of this utility model. The protection scope of this utility model is not limited to the above embodiments. All technical solutions that fall within the scope of this utility model's concept are protected by this utility model.

Claims

1. A chip resistor based on a thin-film resistor, comprising a substrate, a pair of back electrodes, a pair of front electrodes, a resistive layer, a protective layer, and side electrodes; characterized in that, The resistive layer is composed of a thin-film resistor formed by vacuum sputtering, and the resistive layer covers the area between the front electrodes; The protective layer includes a first protective layer and a second protective layer; the first protective layer is composed of aluminum oxide formed by vacuum sputtering, and the second protective layer covers the first protective layer.

2. The chip resistor based on a thin-film resistor according to claim 1, characterized in that, The thin-film resistor forms a corresponding resistive layer, and the aluminum oxide forms a corresponding first protective layer attached to the resistive layer.

3. The chip resistor based on a thin-film resistor according to claim 1, characterized in that, The resistive layer is made of nickel-chromium-silicon material, and the second protective layer is made of epoxy resin.

4. The chip resistor based on a thin-film resistor according to claim 1, characterized in that, The vacuum sputtering is a magnetron sputtering method, and the substrate is placed in a fixture with an oblong hole so that it moves with the fixture to deposit a thin film structure.

5. The chip resistor based on a thin-film resistor according to claim 4, characterized in that, The fixture moves back and forth on the moving path at a speed of 10 mm / s, and the sputtering time is negatively correlated with the resistance value.

6. The chip resistor based on a thin-film resistor according to claim 1, characterized in that, The side electrodes are respectively disposed on opposite sides of the substrate and are used for electrode connection between the front electrode and the corresponding back electrode.

7. The chip resistor based on a thin-film resistor according to claim 6, characterized in that, It also includes a nickel plating layer; the nickel plating layer completely covers the back electrode, side electrode and front electrode.

8. The chip resistor based on a thin-film resistor according to claim 7, characterized in that, It also includes a tin plating layer; the tin plating layer covers the nickel plating layer and overlaps the end face of the second protective layer.

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