Heat treatment device for preventing wafer from sparking and breaking

By adopting a design in which the support column is threadedly connected to the heating plate in the wafer heat treatment device, the problem of wafer arcing and breakage caused by the easy detachment of the support column is solved, and the resistance value is stabilized and the heating uniformity is achieved, thereby improving production efficiency and reducing costs.

CN223501830UActive Publication Date: 2025-10-31SJ SEMICONDUCTOR (JIANGYIN) CORP
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Patent Information

Application Number
CN202423056738.8
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-12-11
Publication Date
2025-10-31
Estimated Expiration
2034-12-11

AI Technical Summary

Technical Problem

During wafer heat treatment, the support pillars are easily carried out of the heating plate, resulting in excessive impedance changes, which can cause wafer arcing or breakage. Furthermore, frequent replacement of the support pillars increases production costs and reduces production line efficiency.

Method used

The material support column is threadedly connected to the material placement hole of the heating plate. The support part extends out of the material placement hole, and the connection part is provided with fine thread to enhance the connection strength. The thermal conductivity and uniformity are improved by using ceramic materials.

Benefits of technology

It effectively prevents the support column from being carried out by electrostatic force or dirt, maintains stable resistance, reduces uneven heating of the wafer, improves production efficiency and reduces costs.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model relates to a heat treatment device for preventing a wafer from sparking and breaking, which comprises a heating disc and material supporting columns, a plurality of material placing holes are arranged at the top of the heating disc in an annular array mode, and the material supporting columns are arranged in the material placing holes; the material supporting column comprises a supporting part and a connecting part, the diameter of the supporting part is smaller than that of the material containing hole, the head of the supporting part extends out of the material containing hole, and the connecting part is in threaded connection with the material containing hole. The utility model has the advantages that the material supporting column is in threaded connection with the heating disc, so that the risk that the material supporting column is adsorbed by electrostatic force or dirt to be taken out of the hole is reduced while the stable resistance value of the material supporting column is ensured; the head of the supporting part extends out of the material placing hole, so that a certain distance is kept between the wafer on the supporting part and the surface of the heating disc, impedance change is reduced, resistance stability in the radio frequency process is maintained, and the wafer is heated more uniformly.
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Description

Technical Field

[0001] This utility model relates to the field of semiconductor packaging technology, and in particular to a heat treatment device for preventing wafer arcing and breakage. Background Technology

[0002] In semiconductor packaging processes, wafers require heat treatment. Due to the small size of wafers, they are typically placed on support pillars and heated by a heating plate. Because of process requirements and the need to replace the support pillars, the pillars are usually inserted directly into holes in the heating plate.

[0003] In automated production lines, during the batch heat treatment of wafers, frequent loading and unloading of individual wafer materials is required. Factors such as electrostatic forces on the back of the wafer or the adsorption of dirt can cause the support pillars to be carried away and detach from the heating plate, resulting in damage to the support pillars. If damaged support pillars are not replaced in time, excessive impedance changes and unstable resistance values ​​will occur during heat treatment, leading to wafer arcing or even wafer breakage and scrapping. However, frequent replacement of support pillars is detrimental to production cost control and production line efficiency.

[0004] Therefore, in order to meet the requirements of mass production of high-quality wafer heat treatment, further improvements are needed to the structure of the wafer heat treatment equipment. Utility Model Content

[0005] The purpose of this invention is to provide a heat treatment device for preventing wafer arcing and breakage, which can prevent wafer arcing and breakage caused by the support column being carried out.

[0006] To achieve the above-mentioned utility model objectives, this utility model provides a heat treatment device for preventing wafer arcing and breakage, including a heating plate and a support column. The top of the heating plate has a plurality of material placement holes arranged in a ring array, and the support column is provided in the material placement hole.

[0007] The support column includes a support part and a connecting part. The diameter of the support part is smaller than the diameter of the material placement hole. The head of the support part extends out of the material placement hole, and the connecting part is threadedly connected to the material placement hole.

[0008] Preferably, the connecting part is provided with fine thread.

[0009] As a further improvement of the utility model, the support portion is provided with an operating hole.

[0010] As a further improvement to the utility model, the support column is a ceramic column.

[0011] This utility model discloses a heat treatment device for preventing wafer arcing and fragmentation. Each wafer is placed on a support column, and the heating plate heats multiple wafers simultaneously through its own heating coil. The support column is threadedly connected to the material placement hole through a connecting part to enhance the connection strength between the support column and the material placement hole, thereby preventing the wafer from generating electrostatic force on the support part, which would cause the support column to be carried out of the material placement hole.

[0012] The advantages of this heat treatment device for preventing wafer arcing and fragmentation compared to existing technologies are as follows:

[0013] (1) The support column and the heating plate are connected by threads to ensure that the resistance of the support column remains stable while reducing the risk of the support column being carried out of the hole by electrostatic force or dirt.

[0014] (2) The head of the support extends out of the material placement hole, so that the wafer on the support is kept at a certain distance from the surface of the heating plate, reducing impedance changes, maintaining the resistance stability during the radio frequency process, and making the wafer more uniformly heated. Attached Figure Description

[0015] Figure 1 This is a schematic diagram of the structure of a heat treatment device for preventing wafer arcing and fragmentation according to the present invention;

[0016] Figure 2 This is a schematic diagram showing the location of the material feeding hole;

[0017] Figure 3 This is a schematic diagram of the support column structure. Detailed Implementation

[0018] The specific embodiments of this utility model will be further described in detail below with reference to the accompanying drawings.

[0019] like Figure 1-2 As shown, the present invention provides a heat treatment device for preventing wafer arcing and breakage, which includes a heating plate 1 and a support column 2. The top of the heating plate 1 has a plurality of material placement holes 11 arranged in a ring array, and the material placement holes 11 are provided with support columns 2.

[0020] like Figure 3 As shown, the support column 2 includes a support part 21 and a connecting part 22. The diameter of the support part 21 is smaller than the diameter of the material placement hole 11. There is a gap between the support part 21 and the material placement hole 11, so that the heated gas in the material placement hole 11 can be discharged from the gap, reducing the risk of the support part 21 getting stuck in the material placement hole 11 due to long-term thermal expansion, and improving the service life of the support column 2. The head of the support part 21 extends out of the material placement hole 11, and the connecting part 22 is threadedly connected to the material placement hole 11.

[0021] This utility model discloses a heat treatment device for preventing wafer arcing and fragmentation. Each wafer is placed on a support column 2. The heating plate 1 heats multiple wafers simultaneously through its own heating coil. The support column 2 is threadedly connected to the material placement hole 11 through the connecting part 22 to enhance the connection strength between the support column 2 and the material placement hole 11, and to prevent the wafer from generating electrostatic force on the support part 21, which would cause the support column 2 to be carried out of the material placement hole 11.

[0022] The diameter of the support column 2 used in wafer heat treatment is approximately 5-6 mm, which is not conducive to manual operation. The support part 21 is provided with an operating hole 23. When disassembling and assembling the support column 2, the operator can use a tool to screw the connecting part 22 through the operating hole 23, which facilitates the threaded connection of the connecting part 22. In addition, the operating hole 23 can reduce the contact area between the surface of the support part 21 and the wafer, further improving the heat uniformity of the wafer.

[0023] Due to the small size of the wafer, the connecting part 22 of the support post 2 is designed to be about 4mm in length. The connecting part 22 is equipped with fine threads with a small pitch, which allows it to provide more threads within a limited length, thereby increasing the connection strength between the connecting part 22 and the material placement hole 11. In addition, the fine thread design increases the friction between the threads, which helps to reduce the loosening of the support post 2.

[0024] The support pillar 2 is a ceramic pillar. Ceramic has excellent thermal conductivity and can heat up quickly, ensuring that the wafer on the support pillar 2 is heated evenly and the hot surface temperature is uniform.

[0025] The preferred embodiments of this utility model have been described in detail above, but this utility model is not limited to the embodiments described. Those skilled in the art can make various equivalent modifications or substitutions without departing from the spirit of this utility model, and these equivalent modifications or substitutions are all included within the scope defined by the claims of this application.

Claims

1. A heat treatment device for preventing wafer arcing and breakage, characterized in that, It includes a heating plate and a support column. The top of the heating plate has several material placement holes arranged in a circular array, and the support column is provided in the material placement hole. The support column includes a support part and a connecting part. The diameter of the support part is smaller than the diameter of the material placement hole. The head of the support part extends out of the material placement hole, and the connecting part is threadedly connected to the material placement hole.

2. The heat treatment device for preventing wafer arcing and breakage as described in claim 1, characterized in that, The connecting part is provided with fine thread.

3. The heat treatment apparatus for preventing wafer arcing and breakage as described in claim 1, characterized in that, The support section is provided with an operating hole.

4. The heat treatment apparatus for preventing wafer arcing and breakage as described in claim 1, characterized in that, The support column is a ceramic column.