Gas introduction device for deposition chamber of chemical vapor deposition furnace

Abstract

A gas leading-in device for a deposition chamber of a chemical vapor deposition furnace relates to the technical field of chemical vapor deposition furnaces and comprises an upper gas guide port seat and a lower base which are vertically inserted, the upper gas guide port seat is composed of an upper square seat and a cylinder extending to the lower portion of the square seat, and an inner hole communicated with the cylinder is formed in the center of the square seat. Four air taps are uniformly arranged along the four surfaces of the outer side of the square seat at intervals, air tap joints at the outer ends of the air taps are respectively connected with an external air source, the inner ends of the air taps are respectively communicated with air inlet channels in the square seat, the air inlet channels are arranged along the tangential direction of an inner hole and are communicated with the inner hole, and a conical inner hole is formed in the lower base; the piston is communicated with the cylinder; according to the utility model, the gas distribution is uniform, the directionality is better, the gas can be diffused farther due to the good gas flow directionality, the problem of the gas flow field of the large chemical vapor deposition furnace is well solved, and the vertical insertion structure is arranged, so that the installation is convenient and fast.

Description

Technical Field

[0001] This utility model relates to the field of chemical vapor deposition furnace technology, and in particular to a gas introduction device for the deposition chamber of a chemical vapor deposition furnace. Background Technology

[0002] As is well known, carbon-carbon composite materials are advanced composite materials with carbon fiber reinforcement and carbon matrix. They have the characteristics of low density, high specific strength, and high temperature resistance, and are widely used in photovoltaic manufacturing, aviation, aerospace and other fields. The key technology for the preparation of carbon-carbon composite materials is the densification treatment of carbon fiber preforms. Chemical vapor deposition furnace is a special equipment for realizing the vapor deposition densification process of carbon-carbon composite materials. Under vacuum or inert gas atmosphere, the area where the workpiece is placed in the furnace, i.e., the deposition chamber, is heated to a certain temperature by a heating element. Then, carbon source gas is introduced to generate pyrolytic carbon. Carbon atoms are deposited on the surface of the workpiece fibers to fill the gaps and achieve the purpose of densification.

[0003] With the increase in product size and furnace loading, there is a need for large-size chemical vapor deposition furnaces, i.e., furnaces with large homogenization zones and large loading capacities. Large chemical vapor deposition furnaces, due to their large single-charge space, require higher uniformity of the carbon source gas atmosphere in the deposition chamber, and demand a wider, more uniform, and more directional gas flow distribution. In the past, the gas introduction devices of such equipment were mostly designed and manufactured as a single piece of heat-resistant stainless steel or graphite material. In use, these devices have shortcomings such as deformation, inconvenient installation and maintenance, poor gas directionality, and uneven gas atmosphere. They cannot meet the process requirements of large chemical vapor deposition furnaces. To meet the process requirements of large chemical vapor deposition furnaces, which have large deposition chamber sizes, large product loading volumes, and higher uniformity of the gas flow field in the deposition chamber, a gas introduction device that meets the process requirements is needed. Summary of the Invention

[0004] To overcome the shortcomings of the prior art, this utility model discloses a gas introduction device for the deposition chamber of a chemical vapor deposition furnace.

[0005] To achieve the aforementioned objective, this utility model adopts the following technical solution:

[0006] A gas introduction device for the deposition chamber of a chemical vapor deposition furnace includes an upper gas inlet seat and a lower base that are inserted and connected vertically. The upper gas inlet seat consists of an upper square seat and a cylindrical tube extending below the square seat. The square seat has an inner hole at its center that communicates with the cylindrical tube. Four gas nozzles are evenly spaced along the four sides of the outer edge of the square seat. The gas nozzle connectors on the outer ends of the gas nozzles are connected to an external gas source. The inner ends of the gas nozzles are connected to the gas inlet channels inside the square seat. The gas inlet channels are all arranged along the tangent direction of the inner hole and communicate with the inner hole. The lower base has a conical inner hole that communicates with the cylindrical tube.

[0007] The gas introduction device for the deposition chamber of the chemical vapor deposition furnace has an upper opening of the lower base inserted into a cylindrical tube at the lower part of the upper gas inlet seat, and the lower base and the square seat of the upper gas inlet seat are fixedly connected by multiple screws.

[0008] The gas introduction device for the deposition chamber of the chemical vapor deposition furnace has multiple mounting holes on the lower base that connect to the top cover of the deposition chamber.

[0009] Due to the adoption of the above technical solution, this utility model has the following beneficial effects:

[0010] The gas introduction device for the deposition chamber of the chemical vapor deposition furnace described in this utility model is installed on the top cover of the deposition chamber corresponding to the product column. An external gas source is injected into the gas inlet channel through four gas nozzles, forming a spiral rotation in the inner hole and directionally dispersing into the deposition chamber along the conical inner hole of the lower base. This utility model has uniform gas distribution and better directionality. Due to the good airflow directionality, the gas can diffuse further, which effectively solves the problem of gas flow field in large chemical vapor deposition furnaces. Moreover, it is designed with an upper and lower plug-in structure, which is convenient and quick to install. Attached Figure Description

[0011] Figure 1 This is a schematic diagram of the structure of this utility model.

[0012] Figure 2 This is a schematic diagram of the internal structure of the upper air guide seat of this utility model.

[0013] Figure 3 This is a structural schematic diagram of the lower base of this utility model.

[0014] In the diagram: 1. Lower base; 2. Upper air inlet seat; 3. Air nozzle; 4. Air nozzle connector; 5. Screw; 6. Nut; 7. Air inlet channel; 8. Inner hole; 9. Conical inner hole. Detailed Implementation

[0015] The present invention will be explained in detail through the following embodiments. The purpose of disclosing the present invention is to protect all technical improvements within the scope of the present invention.

[0016] Combined with appendix Figure 1-3The aforementioned gas introduction device for the deposition chamber of a chemical vapor deposition furnace includes an upper gas inlet seat 2 and a lower base 1, which are inserted vertically. The upper opening of the lower base 1 is inserted into the cylindrical tube at the lower part of the upper gas inlet seat 2, and the lower base 1 and the square seat of the upper gas inlet seat 2 are fixedly connected by multiple screws 5. The upper gas inlet seat 2 consists of an upper square seat and a cylindrical tube extending below the square seat. The center of the square seat has an inner hole 8 that communicates with the cylindrical tube. Four gas nozzles 3 are evenly spaced along the four sides of the outer edge of the square seat. The gas nozzle connectors 4 on the outer ends of the gas nozzles 3 are respectively connected to an external gas source. The inner ends of the gas nozzles 3 are respectively connected to the air inlet channels 7 inside the square seat. The air inlet channels 7 are all arranged along the tangent direction of the inner hole 8 and communicate with the inner hole 8. The lower base 1 has a conical inner hole 9 inside and communicates with the cylindrical tube. The gas nozzles 3 and gas nozzle connectors 4 are made of carbon carbon material, while the lower base 1 and the upper gas inlet seat 2 are made of graphite material.

[0017] Furthermore, the lower base 1 is provided with multiple mounting holes for connecting to the top cover of the sedimentation chamber.

[0018] When using the gas introduction device for the deposition chamber of the chemical vapor deposition furnace described in this utility model, the gas introduction device can be installed on the top cover of the deposition chamber, which is an upper inlet and lower outlet gas method, with the conical inner hole 9 facing downwards; or it can be installed on the bottom cover of the deposition chamber, which is a lower inlet and upper outlet gas method, with the conical inner hole 9 facing upwards. Both methods are easy to install and convenient to replace.

[0019] Taking a large chemical vapor deposition furnace with 7 material columns and top air intake as an example, according to the gas inlet installation layout of the deposition furnace, the gas introduction device is installed on the top cover of the deposition chamber. One device is arranged in the center, and six are evenly distributed around the perimeter. The seven gas introduction devices correspond to the seven material columns. The gas nozzle 3 of each gas introduction device is connected to the external carbon source gas through the gas nozzle connector 4. The carbon source gas is injected into the air intake channel 7 through the four gas nozzles 3, forming a spiral rotation in the inner hole 8, and directionally diffused into the deposition chamber along the conical inner hole 9 of the lower base 1, thereby achieving uniformity of product density and consistency of density in different positions.

[0020] The parts of this utility model not described in detail are existing technologies.

[0021] The embodiments selected herein for the purpose of disclosing the inventive objectives of this utility model are currently considered appropriate; however, it should be understood that this utility model is intended to include all variations and modifications of the embodiments that fall within the scope of this concept and utility model.

Claims

1. A gas introduction device for the deposition chamber of a chemical vapor deposition furnace, comprising an upper gas inlet seat and a lower base connected vertically, characterized in that: The upper air guide seat consists of an upper square seat and a cylindrical tube extending below the square seat. The center of the square seat has an inner hole that communicates with the cylindrical tube. Four air nozzles are evenly spaced along the four sides of the outer edge of the square seat. The air nozzle connectors on the outer ends of the air nozzles are connected to external air sources. The inner ends of the air nozzles are connected to the air intake channels inside the square seat. The air intake channels are all arranged along the tangent of the inner hole and communicate with the inner hole. The lower base has a conical inner hole that communicates with the cylindrical tube.

2. The gas introduction device for the deposition chamber of a chemical vapor deposition furnace according to claim 1, characterized in that: The upper opening of the lower base is inserted into the cylindrical tube at the lower part of the upper air guide seat, and the lower base and the square seat of the upper air guide seat are fixedly connected by multiple screws.

3. The gas introduction device for the deposition chamber of a chemical vapor deposition furnace according to claim 1, characterized in that: The lower base has multiple mounting holes for connecting to the top cover of the sedimentation chamber.

Images