Semiconductor etching equipment

Abstract

The utility model discloses a semiconductor etching device, which belongs to the technical field of semiconductors and comprises a cavity, a first electrode, a second electrode, a third electrode and a fourth electrode. The base is arranged in the cavity; the ejector is arranged on the cavity and extends into the cavity, the ejector and the base are oppositely arranged, the ejector comprises a first branch part and a second branch part, the second branch part is close to the base, and the first branch part is arranged on the side, away from the base, of the second branch part; the at least one lead-in hole extends into the second branch part from one surface, far away from the second branch part, of the first branch part; and the multiple guide-out holes are communicated with the guide-in hole, and the multiple guide-out holes are formed in the side wall of the second branch part in a surrounding mode. The semiconductor etching equipment provided by the utility model can prevent the plasma in the cavity from damaging the ejector, prolongs the service life of the semiconductor etching equipment, and also can prevent the substrate from being damaged in the etching process.

Description

Technical Field

[0001] This utility model belongs to the field of semiconductor technology, and specifically relates to a semiconductor etching device. Background Technology

[0002] Etching equipment, as one of the core pieces of equipment in semiconductor manufacturing processes, is used to perform fine processing of micro-patterns on the substrate surface. Plasma etching equipment, as a type of semiconductor etching equipment, works by injecting gas into a cavity via an ejector. The gas ionizes within the cavity, generating plasma that etches the substrate. However, in plasma etching equipment, there is a risk of the plasma within the cavity igniting near the ejector. This can damage the ejector and cause particles to fall from the ejector onto the substrate, creating defects. Utility Model Content

[0003] The purpose of this invention is to provide a semiconductor etching device that can avoid damage to the ejector by plasma in the cavity, extend the service life of the semiconductor etching device, and also avoid damage to the substrate during the etching process.

[0004] To solve the above-mentioned technical problems, this utility model is achieved through the following technical solution:

[0005] This utility model provides a semiconductor etching apparatus, comprising at least:

[0006] Cavity, the interior of which is hollow;

[0007] A base is disposed within the cavity;

[0008] An injector is disposed on the cavity and extends into the cavity. The injector is disposed opposite to the base. The injector includes a first portion and a second portion. The second portion is close to the base, and the first portion is disposed on the side of the second portion away from the base.

[0009] At least one inlet hole extends from the side of the first portion away from the second portion into the second portion; and

[0010] Multiple outlet holes are connected to the inlet holes, and the multiple outlet holes are arranged around the side wall of the second part.

[0011] In one embodiment of this utility model, a plurality of the outlet holes are equidistantly arranged on the side wall of the second portion.

[0012] In one embodiment of this utility model, the second portion is hermetically sealed on the side near the base.

[0013] In one embodiment of the present invention, the injector is further provided with a plurality of through holes, which are equidistantly arranged on the side of the second portion near the base.

[0014] In one embodiment of this utility model, the through hole and the outlet hole have the same size and shape.

[0015] In one embodiment of this utility model, the size of the inlet hole is larger than the size of the outlet hole.

[0016] In one embodiment of this utility model, the inlet hole and the outlet hole are each circular or polygonal in shape.

[0017] In one embodiment of this utility model, the first portion and the second portion have a common axis.

[0018] In one embodiment of this utility model, the first portion and the second portion are cylinders, the inlet hole is circular, and the diameter of the inlet hole is smaller than the diameter of the second portion.

[0019] In one embodiment of this utility model, the first portion and the second portion are integrated.

[0020] In summary, this utility model provides a semiconductor etching apparatus. By improving the structure of the semiconductor etching apparatus, the unexpected technical effect of this application is that it can avoid damage to the ejector by plasma in the cavity, extend the service life of the semiconductor etching apparatus, and save on maintenance costs. Moreover, the semiconductor etching apparatus provided by this utility model can avoid damage to the substrate during the etching process, improve product yield and stability, and also enable gas to be uniformly injected into the cavity, improving the uniformity of gas in the cavity and improving the etching quality. Attached Figure Description

[0021] To more clearly illustrate the technical solutions of the embodiments of this utility model, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0022] Figure 1 This is a schematic diagram of a semiconductor etching apparatus in one embodiment.

[0023] Figure 2 This is a schematic diagram of the injector viewed from one side of the first section in one embodiment.

[0024] Figure 3 This is a schematic diagram of the injector viewed from one side of the second section in one embodiment.

[0025] Figure 4 This is a schematic diagram of the injector viewed from one side of the second section in another embodiment.

[0026] Label Explanation:

[0027] 10. Cavity; 20. Base; 30. Ejector; 301. First section; 302. Second section; 303. Inlet hole; 304. Outlet hole; 305. Through hole; 40. Substrate. Detailed Implementation

[0028] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of the present utility model.

[0029] Please see Figures 1 to 2 As shown, this utility model provides a semiconductor etching apparatus, including, for example, a cavity 10, a base 20, an ejector 30, an inlet hole 303, and an outlet hole 304. The base 20 is disposed within the cavity 10, and a substrate 40 is placed on the base 20. The ejector 30 is disposed on the cavity 10 and extends into the cavity 10, with the ejector 30 opposite to the base 20. The ejector 30 includes a first portion 301 and a second portion 302, with the second portion 302 located close to the base 20. The inlet hole 303 extends from the side of the first portion 301 away from the second portion 302 into the second portion 302. Multiple outlet holes 304 are arranged around the sidewall of the second portion 302. In the semiconductor etching apparatus provided by this utility model, gas enters the ejector 30 through the inlet hole 303, exits the ejector 30 through the outlet holes 304, and enters the cavity 10, where it is ionized to generate plasma. By providing multiple outlet holes 304 on the sidewall of the second section 302, the semiconductor etching apparatus provided by this invention enables gas to be ejected from the ejector 30 through the outlet holes 304 at a uniform flow rate. This prevents the plasma in the cavity 10 from being ignited near the ejector 30, thereby preventing damage to the ejector 30 and preventing particles from falling from the ejector 30 onto the substrate 40, thus protecting the substrate 40 from damage. Furthermore, the semiconductor etching apparatus provided by this invention, with multiple outlet holes 304 arranged around the sidewall of the second section 302, enables gas to be uniformly ejected from the ejector 30 into the cavity 10 from all directions of the second section 302, improving gas uniformity within the cavity 10 and enhancing etching quality.

[0030] Please see Figure 1As shown, in one embodiment of this invention, the cavity 10 is hollow, providing space for the gas to ionize and generate plasma within the cavity 10. This invention does not limit the shape, size, or material of the cavity 10, and these can be selected according to actual needs. In this embodiment, the cavity 10 is, for example, a cylinder, and the material of the cavity 10 includes at least one of quartz, ceramic, silicon carbide, and silicon nitride, to mitigate the corrosion of the cavity 10 by the plasma within it.

[0031] Please see Figure 1 As shown, in one embodiment of this invention, the base 20 is disposed within the cavity 10 to support the substrate 40. This invention does not limit the shape, size, or material of the base 20, and it can be selected according to actual needs. In this embodiment, the material of the base 20 includes at least one of quartz, ceramic, silicon carbide, and silicon nitride, to mitigate the corrosion of the base 20 by the plasma within the cavity 10.

[0032] Please see Figures 1 to 2 As shown, in one embodiment of this utility model, the injector 30 is disposed on the cavity 10 and extends into the cavity 10, and the injector 30 is disposed opposite to the base 20. The injector 30 is made of materials such as quartz or ceramic to prevent damage to the injector 30 in high-temperature environments and electric arc environments. The injector 30 includes, for example, a first portion 301 and a second portion 302. The second portion 302 is disposed close to the base 20, and the first portion 301 is disposed on the side of the second portion 302 away from the base 20. This utility model does not limit the specific shape of the first portion 301 and the second portion 302, nor their relative dimensions, and can be selected according to actual needs. In this embodiment, for example, the first portion 301 and the second portion 302 are cylindrical, to illustrate the technical solution of this utility model.

[0033] Please see Figures 1 to 3 As shown, in one embodiment of this invention, the first portion 301 and the second portion 302 share a common axis. The diameter of the first portion 301 is, for example, larger than the diameter of the second portion 302, and the height of the first portion 301 is, for example, greater than the height of the second portion 302. The second portion 302 is hermetically sealed on the side near the base 20, and its interior is hollow, providing a channel for gas flow within the second portion 302. Furthermore, the first portion 301 and the second portion 302 are, for example, integrally formed to improve the overall mechanical strength of the injector 30. In other embodiments of this invention, the diameter of the first portion 301 may also be equal to the diameter of the second portion 302.

[0034] Please see Figures 1 to 2As shown, in one embodiment of this utility model, the injector 30 is provided with an inlet hole 303, which extends from the side of the first portion 301 away from the second portion 302 into the second portion 302, and communicates with the hollow interior of the second portion 302. The inlet hole 303 is, for example, at least one, and its shape is, for example, circular or polygonal. In this embodiment, the inlet hole 303 is, for example, at least one, its shape is, for example, circular, and its diameter is, for example, smaller than the diameter of the second portion 302. In this embodiment, external gas enters the injector 30 through the inlet hole 303, flows through the first portion 301, and enters the second portion 302.

[0035] Please see Figures 1 to 3 As shown, in one embodiment of this utility model, the ejector 30 is further provided with an outlet hole 304, which is disposed around the side wall of the second portion 302 and communicates with the inlet hole 303. There may be multiple outlet holes 304, and their shapes may be circular or polygonal. In this embodiment, the multiple outlet holes 304 are disposed at equal intervals on the side wall of the second portion 302, and their shapes may be circular, with the size of the outlet holes 304 being smaller than the size of the inlet hole 303. In this embodiment, the gas in the first portion 301 enters the second portion 302 through the inlet hole 303, and then exits the ejector 30 into the cavity 10 through the multiple outlet holes 304. The gas is ionized in the cavity 10, generating plasma, which etches the substrate 40. By arranging multiple outlet holes 304 around the second section 302, gas in the second section 302 can enter the cavity 10 from various directions, improving the uniformity of the gas in the cavity 10 and enhancing the etching quality. Furthermore, by providing outlet holes 304 on the sidewall of the second section 302, and sealing the side of the second section 302 closest to the base 20, gas can be ejected from the ejector 30 through the outlet holes 304 at a uniform flow rate. This prevents the plasma in the cavity 10 from igniting near the ejector 30, thus avoiding damage to the ejector 30 and preventing particles from falling from the ejector 30 onto the substrate 40, protecting the substrate 40 from damage.

[0036] Please see Figure 1 , Figure 2 and Figure 4As shown, in another embodiment of this invention, a through hole 305 is provided, for example, on the surface of the second portion 302 near the base 20. There are, for example, multiple through holes 305, and the shape and size of the through holes 305 are, for example, the same as the shape and size of the outlet hole 304. In this embodiment, multiple through holes 305 are, for example, equidistantly arranged on the side of the second portion 302 near the base 20, and the shape of the through holes 305 is, for example, circular, and the diameter of the through holes 305 is, for example, equal to the diameter of the outlet hole 304. By providing through holes 305 with the same size as the outlet hole 304, gas in the second portion 302 can be further allowed to enter the cavity 10 from various directions. Simultaneously, the flow rate of gas exiting the ejector 30 through the outlet hole 304 and through holes 305 is made uniform, preventing the plasma in the cavity 10 from being ignited near the ejector 30, thereby avoiding damage to the ejector 30 and the substrate 40.

[0037] In summary, this invention provides a semiconductor etching apparatus. By providing multiple outlet holes on the sidewall of the ejector, an unexpected technical effect is achieved: the gas inside the ejector is ejected from the ejector at a uniform flow rate through the outlet holes. This prevents the plasma in the cavity from being ignited near the ejector, thus protecting the ejector from damage. It also prevents particles from falling from the ejector onto the substrate, protecting the substrate from damage. Furthermore, by arranging the outlet holes around the ejector, the semiconductor etching apparatus provided by this invention allows the gas in the ejector to exit the ejector and enter the cavity from various directions, thereby improving the uniformity of the gas in the cavity and enhancing the etching quality.

[0038] The embodiments of this utility model disclosed above are merely illustrative of the present utility model. The embodiments do not exhaustively describe all details, nor do they limit the utility model to the specific implementations described. Obviously, many modifications and variations can be made based on the content of this specification. This specification selects and specifically describes these embodiments to better explain the principles and practical applications of this utility model, thereby enabling those skilled in the art to better understand and utilize it. This utility model is limited only by the claims and their full scope and equivalents.

Claims

1. A semiconductor etching apparatus, characterized in that, At least including: Cavity, the interior of which is hollow; A base is disposed within the cavity; An injector is disposed on the cavity and extends into the cavity. The injector is disposed opposite to the base. The injector includes a first portion and a second portion. The second portion is close to the base, and the first portion is disposed on the side of the second portion away from the base. At least one inlet hole extends from the side of the first portion away from the second portion into the second portion; as well as Multiple outlet holes are connected to the inlet holes, and the multiple outlet holes are arranged around the side wall of the second part.

2. The semiconductor etching apparatus according to claim 1, characterized in that, The plurality of outlet holes are equidistantly arranged on the sidewall of the second section.

3. The semiconductor etching apparatus according to claim 1, characterized in that, The second section is enclosed on the side near the base.

4. The semiconductor etching apparatus according to claim 1, characterized in that, The injector is also provided with multiple through holes, which are equidistantly arranged on the side of the second section near the base.

5. The semiconductor etching apparatus according to claim 4, characterized in that, The through hole and the outlet hole are the same size and shape.

6. The semiconductor etching apparatus according to claim 1, characterized in that, The size of the inlet hole is larger than the size of the outlet hole.

7. The semiconductor etching apparatus according to claim 1, characterized in that, The inlet hole and the outlet hole are each circular or polygonal in shape.

8. The semiconductor etching apparatus according to claim 1, characterized in that, The first section and the second section share a common axis.

9. The semiconductor etching apparatus according to claim 1, characterized in that, The first and second portions are cylindrical, and the inlet hole is circular with a diameter smaller than that of the second portion.

10. The semiconductor etching apparatus according to claim 1, characterized in that, The first division and the second division are integrated into one unit.

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