Parallel multi-chip current-sharing high-power SiC module
By optimizing the substrate design and gate resistor of the parallel multi-chip SiC module, the problems of inconsistent switching speed and poor heat dissipation in traditional power modules are solved, achieving efficient heat dissipation and improved reliability.
Patent Information
- Application Number
- CN202422674346.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-04
- Publication Date
- 2025-11-04
- Estimated Expiration
- 2034-11-04
AI Technical Summary
In traditional power modules, the switching speed of the switching elements is inconsistent, the module junction temperature is high, and the heat dissipation capacity is poor, which leads to increased internal inductance and losses, damages the switching elements, and affects the reliability of the module.
The SiC module, which adopts a parallel multi-chip structure, achieves current sharing and precise control of switching elements through substrate design and gate resistor optimization, combined with heat dissipation base plate and packaging process, thereby improving heat dissipation capacity and reliability.
This achieves uniform switching speed control of switching elements, reduces junction temperature, improves power density and heat dissipation capacity, and enhances module reliability.
Smart Images
Figure CN223513969U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of power module technology, specifically a high-power SiC module with parallel multi-chip current sharing. Background Technology
[0002] Power modules are widely used in various fields such as automobiles, charging piles, photovoltaic power generation, wind power generation, consumer electronics, rail transportation, industrial motors, energy storage, aerospace, and military. The booming electric vehicle market, in particular, places stringent demands on the power density and reliability of power modules, especially since the core component, the electric drive inverter, is mainly composed of power modules. As power electronic devices develop towards higher density, higher power, and miniaturization, heat dissipation becomes increasingly serious, mainly affected by the material properties and connection methods of the internal components. Therefore, the selection of materials and connection methods is crucial.
[0003] Traditional power modules suffer from limitations in internal circuit connections and different areas for placing switching elements. This leads to inconsistent switching speeds, high module junction temperatures, increased internal inductance, poor heat dissipation, and high losses, ultimately damaging the switching elements and the entire module. Therefore, we propose a high-power SiC module with parallel multi-chip current sharing to address these issues. Utility Model Content
[0004] The purpose of this invention is to provide a high-power SiC module with parallel multi-chip current sharing to solve the problems mentioned in the background art.
[0005] To achieve the above objectives, this utility model provides the following technical solution: a high-power SiC module with parallel multi-chip current sharing, comprising a substrate, the substrate being composed of a conductive copper layer, a ceramic insulating layer, and a lower copper layer, and the conductive copper layer forming the power module circuit layout; a gate resistor is provided at the front end of the top of the substrate; a thermistor is installed on the left side of the top of the substrate; switching elements are fixed to the top of the substrate via bonding wires; a heat dissipation base plate is installed at the bottom of the substrate; metal pressure rings are provided on both sides of the heat dissipation base plate; an insulating plastic shell is installed on the outside of the substrate; a signal terminal is provided at the front end of the top of the insulating plastic shell; input terminals and output terminals are respectively provided at the front and rear ends of the right side of the insulating plastic shell; an AC terminal is provided on the left side of the insulating plastic shell; and an insulating cover plate is movably provided at the top of the insulating plastic shell.
[0006] Preferably, there are several switching elements, and the several switching elements are connected together with a metal substrate.
[0007] Preferably, four sets of metal pressure rings are provided, and the four sets of metal pressure rings are symmetrically distributed about the central axis of the heat dissipation base plate.
[0008] Preferably, the cross-section of the insulating cover is smaller than the cross-section of the insulating plastic shell, and the insulating cover and the insulating plastic shell form an interlocking structure.
[0009] Preferably, a plurality of switching elements are provided, and the plurality of switching elements are distributed at equal intervals at the top of the substrate.
[0010] Compared with the prior art, the beneficial effects of this utility model are:
[0011] This high-power SiC module with parallel multi-chip current sharing not only enables the parallel connection of multiple switching elements to improve power density, but also adds gate resistors to the switching elements to control their on and off states. By controlling the voltage of the gate resistors, the switching speed and switching time can be precisely controlled to meet different application conditions.
[0012] The power SiC module has a large substrate heat dissipation area, which helps to reduce junction temperature. At the same time, the module adopts advanced packaging technology, which greatly improves heat dissipation capacity and reliability. Attached Figure Description
[0013] Figure 1 This is a top view of the structure of this utility model;
[0014] Figure 2 This is a top view of the substrate structure of this utility model;
[0015] Figure 3 This is a side view of the substrate structure of this utility model;
[0016] Figure 4 This is a top view of the switching element of this utility model.
[0017] Figure 5 This is a top view of the heat dissipation base plate of this utility model;
[0018] Figure 6 This is a three-dimensional structural diagram of the present invention.
[0019] In the diagram: 1. Substrate; 2. Conductive copper layer; 3. Ceramic insulating layer; 4. Lower copper layer; 5. Gate resistor; 6. Thermistor; 7. Switching element; 8. Bonding wire; 9. Heat sink; 10. Insulating plastic housing; 11. Signal terminal; 12. AC terminal; 13. Input terminal; 14. Output terminal; 15. Metal retaining ring; 16. Insulating cover. Detailed Implementation
[0020] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.
[0021] Please see Figure 1-6 This utility model provides an embodiment of a high-power SiC module with parallel multi-chip current sharing, including a substrate 1. The substrate 1 is composed of a conductive copper layer 2, a ceramic insulating layer 3, and a lower copper layer 4, and the conductive copper layer 2 forms the power module circuit layout. A gate resistor 5 is provided at the front end of the top of the substrate 1, and a thermistor 6 is installed on the left side of the top of the substrate 1. Switching elements 7 are fixed to the top of the substrate 1 by bonding wires 8. Several switching elements 7 are provided and are evenly distributed at the top of the substrate 1. A heat dissipation base plate 9 is installed at the bottom of the substrate 1, and metal pressure rings 15 are provided on both sides of the heat dissipation base plate 9. An insulating plastic shell 10 is installed on the outside of the substrate 1, and a signal terminal 11 is provided at the front end of the top of the insulating plastic shell 10. The insulating plastic housing 10 has an input terminal 13 and an output terminal 14 at its front and rear ends on the right side, respectively. An AC terminal 12 is provided on the left side of the insulating plastic housing 10. An insulating cover plate 16 is movably provided on the top of the insulating plastic housing 10. Several switching elements 7 are provided, and the several switching elements 7 are connected to the base plate 1 by metal. Four sets of metal pressure rings 15 are provided, and the four sets of metal pressure rings 15 are symmetrically distributed about the central axis of the heat dissipation base plate 9, so that the base plate 1 and the insulating plastic housing 10 are stably installed together. The cross-section of the insulating cover plate 16 is smaller than the cross-section of the insulating plastic housing 10. The insulating cover plate 16 and the insulating plastic housing 10 form a locking structure, so that the insulating cover plate 16 and the insulating plastic housing 10 are stably sealed together.
[0022] Working principle: The substrate 1 consists of a copper metal layer 4 on the back, a ceramic insulating layer 3 (alumina / silicon nitride / aluminum nitride, etc.) in the middle, and a conductive copper metal layer 2 on the front. The front side forms the power module circuit layout, and it is composed of two substrates 1. Switching components 7 (2IGBT / FRD / SiC / GaN / GaO / gate resistor 5) are placed on each substrate 1 and connected to the substrate 1 by soldering silver sintering / copper sintering / solder paste / silver film. The substrate 1 is connected to the heat sink 9. The above-mentioned assemblies are connected to the heat sink 9 / AlSiC, etc. by soldering silver sintering / copper sintering / solder paste / silver film. The signal terminal 11 is connected to the substrate 1 by ultrasonic welding / solder paste / solder sheet, etc. The substrates 1 are connected together by aluminum wire / copper wire / gold wire / silver wire / metal sheet / copper strip / aluminum strip, etc. The above components are connected to the insulating plastic shell 10 by silicone rubber or other sealant. The insulating plastic shell 10 is injected with insulating filler such as silicone gel / epoxy resin and dried. The insulating cover plate 16 is covered to form a low inductance power module. By optimizing the layout of the substrate 1 and adjusting the connection method of the gate resistor 5, the parasitic inductance and thermal resistance are reduced, and the switching speed, power output capability and module reliability are improved.
[0023] It will be apparent to those skilled in the art that this invention is not limited to the details of the exemplary embodiments described above, and that it can be implemented in other specific forms without departing from the spirit or essential characteristics of this invention. Therefore, the embodiments should be considered illustrative and non-limiting in all respects, and the scope of this invention is defined by the appended claims rather than the foregoing description. Thus, it is intended that all variations falling within the meaning and scope of equivalents of the claims be included within this invention. No reference numerals in the claims should be construed as limiting the scope of the claims.
Claims
1. A high-power SiC module with parallel multi-chip current sharing, comprising a substrate (1), characterized in that: The substrate (1) is composed of a conductive copper metal layer (2), a ceramic insulating layer (3), and a lower copper metal layer (4), and the conductive copper metal layer (2) forms the power module circuit layout. A gate resistor (5) is provided at the front end of the top of the substrate (1). A thermistor (6) is installed on the left side of the top of the substrate (1). Switching elements (7) are fixed at the top of the substrate (1) by bonding wires (8). A heat dissipation base plate (9) is installed at the bottom of the substrate (1). Metal pressure rings (15) are provided on both sides of the heat dissipation base plate (9). An insulating plastic shell (10) is installed on the outside of the substrate (1). A signal terminal (11) is provided at the front end of the top of the insulating plastic shell (10). Input terminals (13) and output terminals (14) are provided at the front and rear ends of the right side of the insulating plastic shell (10). An AC terminal (12) is provided on the left side of the insulating plastic shell (10). An insulating cover plate (16) is movably provided at the top of the insulating plastic shell (10).
2. A high-power SiC module with parallel multi-chip current sharing as described in claim 1, characterized in that: The switching element (7) is provided in a plurality of units, and the plurality of the switching elements (7) are connected together with the substrate (1) by means of metal.
3. A high-power SiC module with parallel multi-chip current sharing as described in claim 1, characterized in that: The metal pressure rings (15) are provided in four sets, and the four sets of metal pressure rings (15) are symmetrically distributed about the central axis of the heat dissipation base plate (9).
4. A high-power SiC module with parallel multi-chip current sharing as described in claim 1, characterized in that: The cross-section of the insulating cover plate (16) is smaller than the cross-section of the insulating plastic shell (10), and the insulating cover plate (16) and the insulating plastic shell (10) form an interlocking structure.
5. A high-power SiC module with parallel multi-chip current sharing as described in claim 1, characterized in that: The switching element (7) is provided in a plurality of units, and the plurality of the switching elements (7) are distributed at equal intervals at the top of the substrate (1).