Radio frequency front-end module and electronic equipment

Abstract

The utility model discloses a radio frequency front-end module and electronic equipment. The radio frequency front-end module comprises a power amplifier and a matching module connected to the output end of the power amplifier. The matching module comprises a first inductor and a second inductor which are connected. Wherein the coupling coefficient of the first inductor and the second inductor is larger than or equal to-0.5 and smaller than 0. Therefore, the coupling coefficient of the first inductor and the second inductor is a negative number, that is, the coupling inductance formed by coupling the first inductor and the second inductor is a negative value. Under the action of the coupling inductor, the equivalent inductance value of the first inductor is larger than the actual inductance value of the first inductor, and the equivalent inductance value of the second inductor is larger than the actual inductance value of the second inductor, so that the quality factors (namely, the Q value) corresponding to the first inductor and the second inductor can be increased. Under the condition that the Q values of the first inductor and the second inductor are both increased, the insertion loss of the matching module can be effectively reduced so as to improve the output quality of the radio frequency signal.

Description

Technical Field

[0001] This application relates to the field of radio frequency technology, and more specifically, to a radio frequency front-end module and electronic device. Background Technology

[0002] Currently, radio frequency (RF) front-end modules are widely used in wireless communication, the Internet of Things (IoT), smart homes, and other fields. They can process RF signals (e.g., power amplification, modulation and demodulation) to complete the tasks of receiving and transmitting RF signals.

[0003] In existing RF front-end modules, a matching circuit is typically connected to the output of the power amplifier to achieve output impedance matching. However, the matching circuit introduces insertion loss, which in turn reduces the output quality of the RF signal. Utility Model Content

[0004] This application provides a radio frequency front-end module and an electronic device.

[0005] According to a first aspect of this application, an embodiment of this application provides a radio frequency (RF) front-end module, which includes a power amplifier and a matching module, wherein the matching module is connected to the output terminal of the power amplifier. The matching module includes a first inductor and a second inductor connected together, and the coupling coefficient between the first inductor and the second inductor is greater than or equal to -0.5 and less than 0.

[0006] In some possible embodiments, the power amplifier includes N transistors, the output terminals of which are connected to form the output terminal of the power amplifier, which is used to output a radio frequency signal; wherein N is a positive integer; the coupling coefficient of the first inductor and the second inductor is greater than or equal to -0.2 and less than 0.

[0007] In some possible embodiments, one end of the first inductor is connected to one end of the second inductor to form a common terminal, which is connected to the output terminal of the power amplifier. The other end of the first inductor is grounded, and the other end of the second inductor is used to output radio frequency signals. The first inductor and the second inductor are both wound around the same side of the power amplifier with the common terminal as the starting point and in the same rotation direction. The rotation direction is either clockwise or counterclockwise.

[0008] In some possible embodiments, the radio frequency front-end module further includes a substrate, which includes multiple stacked metal layers, with a first inductor and a second inductor wound on the same metal layer; the first inductor includes a first coupling segment, and the second inductor includes a second coupling segment, with the first coupling segment and the second coupling segment spaced apart to achieve mutual coupling; wherein the transmission direction of the radio frequency signal in the first coupling segment is opposite to the transmission direction of the radio frequency signal in the second coupling segment.

[0009] In some possible embodiments, the operating frequency band of the RF front-end module is a first frequency band, and the minimum spacing between the first coupling segment and the second coupling segment is greater than or equal to 40 μm and less than or equal to 200 μm; or, the operating frequency band of the RF front-end module is a second frequency band, and the minimum spacing between the first coupling segment and the second coupling segment is greater than or equal to 40 μm and less than or equal to 150 μm; wherein, the frequency of the second frequency band is higher than the frequency of the first frequency band.

[0010] In some possible embodiments, the operating frequency band of the RF front-end module is a first frequency band, and the inductance of the first coupling section is greater than or equal to 0.01nH and less than or equal to 0.2nH; or, the ratio of the length of the first coupling section to the length of the first inductor is greater than or equal to 0.1 and less than or equal to 0.4; or, the operating frequency band of the RF front-end module is a second frequency band, and the inductance of the first coupling section is greater than or equal to 0.01nH and less than or equal to 0.15nH; or, the ratio of the length of the first coupling section to the length of the first inductor is greater than or equal to 0.1 and less than or equal to 0.3; wherein, the frequency of the second frequency band is higher than the frequency of the first frequency band.

[0011] In some possible embodiments, the operating frequency band of the RF front-end module is a first frequency band, and the inductance of the second coupling section is greater than or equal to 0.01nH and less than or equal to 0.2nH; or, the ratio of the length of the second coupling section to the length of the second inductor is greater than or equal to 0.1 and less than or equal to 0.4; or, the operating frequency band of the RF front-end module is a second frequency band, and the inductance of the second coupling section is greater than or equal to 0.01nH and less than or equal to 0.15nH; or, the ratio of the length of the second coupling section to the length of the second inductor is greater than or equal to 0.1 and less than or equal to 0.3; wherein, the frequency of the second frequency band is higher than the frequency of the first frequency band.

[0012] In some possible embodiments, the RF front-end module further includes a substrate, which includes multiple stacked metal layers, with a first inductor and a second inductor wound on different metal layers; the first inductor includes a third coupling segment, and the second inductor includes a fourth coupling segment, wherein the projection of the third coupling segment in the thickness direction of the substrate overlaps with at least a portion of the fourth coupling segment to achieve mutual coupling; wherein the transmission direction of the RF signal in the third coupling segment is opposite to the transmission direction of the RF signal in the fourth coupling segment.

[0013] In some possible embodiments, the operating frequency band of the RF front-end module is a first frequency band, and the ratio of the length of the third coupling segment to the length of the first inductor is greater than or equal to 0.1 and less than or equal to 0.3; or, the ratio of the length of the fourth coupling segment to the length of the second inductor is greater than or equal to 0.1 and less than or equal to 0.3; or, the operating frequency band of the RF front-end module is a second frequency band, and the ratio of the length of the third coupling segment to the length of the first inductor is greater than or equal to 0.1 and less than or equal to 0.2; or, the ratio of the length of the fourth coupling segment to the length of the second inductor is greater than or equal to 0.1 and less than or equal to 0.2; wherein, the frequency of the second frequency band is higher than the frequency of the first frequency band.

[0014] In some possible embodiments, the frequency of the first frequency band is greater than or equal to 1.7 GHz and less than or equal to 2 GHz; the frequency of the second frequency band is greater than or equal to 2.3 GHz and less than or equal to 2.7 GHz.

[0015] In some possible embodiments, the matching module further includes a first capacitor and a second capacitor; the common terminal is connected to the output terminal of the power amplifier through the first capacitor; one end of the second capacitor is connected to the other end of the second inductor, and the other end of the second capacitor is grounded.

[0016] In some possible embodiments, the RF front-end module further includes a substrate, a power amplifier and a first capacitor integrated within a chip, the chip being disposed on the substrate; the chip has a connection terminal, the first capacitor being connected between the connection terminal and the output terminal of the power amplifier; a first inductor and a second inductor are wound on the same side of the chip and respectively connected to the connection terminal.

[0017] In some possible embodiments, the first inductor and the second inductor are arranged sequentially in the first direction, the first inductor and the chip are arranged sequentially in the second direction, and the second inductor and the chip are arranged sequentially in the second direction; the second direction intersects the first direction.

[0018] In some possible embodiments, the substrate includes multiple stacked metal layers; the second inductor includes a first connection segment connected to the chip and wound around the substrate; the first inductor and the first connection segment are both wound around the same metal layer with the connection end as the starting point and in the same rotation direction, and the first inductor and the first connection segment are spaced apart to achieve mutual coupling; the rotation direction is clockwise or counterclockwise.

[0019] In some possible embodiments, the chip also has a ground terminal, and the other end of the first inductor is connected to the ground terminal.

[0020] In some possible embodiments, the second inductor further includes a second connection segment, one end of which is connected to the first connection segment, and the other end of which is connected to the second capacitor; the second connection segment and the first connection segment are wound on different metal layers.

[0021] In some possible embodiments, the second capacitor is disposed on the substrate, and the second capacitor and the chip are respectively located on opposite sides of the second inductor.

[0022] This application provides a radio frequency (RF) front-end module, which may include a power amplifier and a matching module connected to the output of the power amplifier. The matching module may include a first inductor and a second inductor connected in series. For example, the first inductor may be a parallel inductor, and the second inductor may be a series inductor.

[0023] Specifically, the coupling coefficient between the first inductor and the second inductor is greater than or equal to -0.5 and less than 0. For example, the coupling coefficient can be -0.4, -0.3, -0.2, -0.1, etc. Therefore, in this embodiment, the coupling coefficient between the first inductor and the second inductor is negative, that is, the coupled inductance formed by the coupling of the first inductor and the second inductor is negative, i.e., the coupled inductance is capacitive.

[0024] Under the influence of the coupling inductors, the equivalent inductance of the first inductor will be greater than its actual inductance, and the equivalent inductance of the second inductor will also be greater than its actual inductance. This increases the quality factor (i.e., Q value) of both the first and second inductors. With the Q values ​​of both inductors increasing, the insertion loss of the matching module can be effectively reduced, thereby improving the output quality of the RF signal.

[0025] According to a second aspect of this application, embodiments of this application also provide a radio frequency (RF) front-end module, which includes a power amplifier and a matching module, wherein the matching module is connected to the output terminal of the power amplifier. The matching module includes a first inductor and a second inductor connected together, and the first inductor and the second inductor are coupled to form a coupling region; the transmission direction of the RF signal in the first inductor within the coupling region is opposite to the transmission direction of the RF signal in the second inductor within the coupling region.

[0026] In some possible embodiments, the coupling coefficient between the first inductor and the second inductor is greater than or equal to -0.5 and less than 0.

[0027] In some possible embodiments, the power amplifier includes N transistors, the output terminals of which are connected to form the output terminal of the power amplifier, which is used to output a radio frequency signal; wherein N is a positive integer; the coupling coefficient of the first inductor and the second inductor is greater than or equal to -0.2 and less than 0.

[0028] In some possible embodiments, one end of the first inductor is connected to one end of the second inductor to form a common terminal, which is connected to the output terminal of the power amplifier. The other end of the first inductor is grounded, and the other end of the second inductor is used to output radio frequency signals. The first and second inductors are both wound around the same side of the power amplifier with the common terminal as the starting point and in the same rotation direction. The first inductor and at least part of the second inductor are spaced apart. The rotation direction is clockwise or counterclockwise.

[0029] In some possible embodiments, the first inductor includes a first coupling segment, the second inductor includes a second coupling segment, and the first coupling segment and the second coupling segment are spaced apart to achieve mutual coupling; wherein the transmission direction of the radio frequency signal in the first coupling segment is opposite to the transmission direction of the radio frequency signal in the second coupling segment.

[0030] This application provides a radio frequency (RF) front-end module, which may include a power amplifier and a matching module connected to the output of the power amplifier. The matching module may include a first inductor and a second inductor connected in series. For example, the first inductor may be a parallel inductor, and the second inductor may be a series inductor.

[0031] Since the first inductor and the second inductor are coupled to form a coupling region, and the direction of radio frequency signal transmission in the first inductor within the coupling region is opposite to the direction of radio frequency signal transmission in the second inductor within the coupling region, it indicates that the coupling coefficient between the first inductor and the second inductor is negative. In other words, the coupled inductance formed by the coupling of the first inductor and the second inductor is negative, that is, the coupled inductance is capacitive.

[0032] Under the influence of the coupling inductors, the equivalent inductance of the first inductor will be greater than its actual inductance, and the equivalent inductance of the second inductor will also be greater than its actual inductance. This increases the quality factor (i.e., Q value) of both the first and second inductors. With the Q values ​​of both inductors increasing, the insertion loss of the matching module can be effectively reduced, thereby improving the output quality of the RF signal.

[0033] According to a third aspect of this application, embodiments of this application also provide an electronic device, which includes the radio frequency front-end module described above. Attached Figure Description

[0034] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0035] Figure 1 This is a schematic diagram of the circuit structure of the radio frequency front-end module provided in the embodiments of this application.

[0036] Figure 2 yes Figure 1 The diagram shows the equivalent circuit diagram of the matching module in the RF front-end module shown.

[0037] Figure 3 This is a schematic diagram of another circuit structure of the radio frequency front-end module provided in the embodiments of this application.

[0038] Figure 4 yes Figure 3 The diagram shows the insertion loss curve corresponding to the matching module in the RF front-end module.

[0039] Figure 5 yes Figure 3 The diagram shows the real part of the impedance curve corresponding to the matching module in the RF front-end module.

[0040] Figure 6 yes Figure 3 The diagram shows the substrate layout corresponding to the RF front-end module.

[0041] Figure 7 yes Figure 6 The diagram shows a cross-sectional view of the substrate in the RF front-end module.

[0042] Figure 8 yes Figure 3 The diagram shows another substrate layout corresponding to the RF front-end module shown.

[0043] Figure 9 This is a schematic diagram of the structure of the electronic device provided in the embodiments of this application. Detailed Implementation

[0044] To enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are merely some embodiments of the present application, and not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present application without creative effort are within the scope of protection of the present application.

[0045] This application provides a radio frequency (RF) front-end module 100, which integrates two or more discrete components such as RF switches, low-noise amplifiers, filters, duplexers, and power amplifiers into a single independent module, thereby improving integration and hardware performance while miniaturizing the size. Specifically, the RF front-end module 100 is suitable for installation in electronic devices, where it is used to receive and transmit RF signals to realize the wireless communication function of the electronic device.

[0046] Please see Figure 1 The RF front-end module 100 may include a power amplifier 10 and a matching module 30, with the matching module 30 connected to the output terminal 120 of the power amplifier 10. The matching module 30 may include a first inductor 320 and a second inductor 340 connected together.

[0047] exist Figure 1 In the illustrated embodiment, one end of the first inductor 320 is connected to one end of the second inductor 340 to form a common terminal 301. The common terminal 301 is connected to the output terminal 120 of the power amplifier 10. The other end of the first inductor 320 is grounded, and the other end of the second inductor 340 is used to output radio frequency signals. That is, the first inductor 320 is a parallel inductor, and the second inductor 340 is a series inductor. Specifically, the two ends of the first inductor 320 and the second inductor 340 used to connect to form the common terminal 301 (i.e., one end of the first inductor 320 and one end of the second inductor 340) are opposite-named terminals.

[0048] Of course, in some other possible embodiments, the first inductor 320 can be a series inductor and the second inductor 340 can be a parallel inductor; for example, both the first inductor 320 and the second inductor 340 can be series inductors; or both the first inductor 320 and the second inductor 340 can be parallel inductors. This embodiment does not limit the specific implementation of the first inductor 320 and the second inductor 340. Any two connected inductors in the output matching network of the RF front-end module can be regarded as the first inductor 320 and the second inductor 340 in this embodiment. In the following description, the first inductor 320 is a parallel inductor and the second inductor 340 is a series inductor.

[0049] Specifically, the coupling coefficient K of the first inductor 320 and the second inductor 340 is greater than or equal to -0.5 and less than 0. For example, the coupling coefficient can be -0.4, -0.3, -0.2, -0.1, etc. Therefore, in this embodiment, the coupling coefficient of the first inductor 320 and the second inductor 340 is negative, that is, the coupled inductance formed by the coupling of the first inductor 320 and the second inductor 340 is negative, i.e., the coupled inductance is capacitive. For more details, please refer to... Figure 2 The coupled inductance satisfies the formula: Among them, L mut L is the inductance value of the coupled inductor, K is the coupling coefficient, and L is the coupling coefficient. shunt L is the actual inductance value of the first inductor, 320. seris This is the actual inductance value of the second inductor, 340. It's easy to see that when K is negative, the coupling inductance calculated using the above formula is also negative.

[0050] Under the influence of the coupling inductors, the equivalent inductance of the first inductor 320 will be greater than its actual inductance, and the equivalent inductance of the second inductor 340 will be greater than its actual inductance. Specifically, the equivalent inductance of the first inductor 320 satisfies the formula: L ′ shunt =L shunt ―L mut Among them, L ′ shunt This is the equivalent inductance value of the first inductor 320. The equivalent inductance value of the second inductor 340 satisfies the formula: L ′ seris =L seris ―L mut Among them, L ′ seris This is the equivalent inductance value of the second inductor 340.

[0051] Therefore, when the equivalent inductance values ​​of the first inductor 320 and the second inductor 340 are both increased compared to the actual inductance values, the quality factor (i.e., Q value) corresponding to the first inductor 320 and the second inductor 340 can be increased, thereby effectively reducing the insertion loss of the matching module 30 and improving the output quality of the radio frequency signal.

[0052] The specific implementation of the RF front-end module 100 is explained below.

[0053] In this embodiment, the power amplifier 10 is used to amplify the power of the input radio frequency signal. Please refer to [link / reference]. Figure 3 The power amplifier 10 may include N transistors 140 and N input capacitors 160, where N is a positive integer and can be equal to 1, 2, 4, 6, 9, etc. The output terminals of the N transistors 140 are connected to form the output terminal 120 of the power amplifier 10, which is used to output one radio frequency (RF) signal. The input terminals of the N transistors 140 are connected one-to-one to one end of the N input capacitors 160, and the other ends of the N input capacitors 160 are connected together to the input terminal 101, which is used to input the RF signal to be amplified.

[0054] In some possible embodiments, transistor 140 can be a heterojunction bipolar transistor (HBT), with the base of the HBT being the input terminal of transistor 140, the collector being the output terminal of transistor 140, and the emitter being grounded. In other possible embodiments, transistor 140 can be a bipolar junction transistor (BJT), with the base of the BJT being the input terminal of transistor 140, the collector being the output terminal of transistor 140, and the emitter being grounded. In still other possible embodiments, transistor 140 can be a metal-oxide-semiconductor field-effect transistor (MOSFET), with the gate of the MOSFET being the input terminal of transistor 140, the source being the output terminal of transistor 140, and the drain being grounded.

[0055] N input capacitors 160 are connected one-to-one to the input terminals of N transistors 140 to block DC signals, thereby ensuring the normal operation of the transistors 140. Specifically, the input capacitors 160 can be multilayer capacitors. In addition, the N input capacitors 160 can also play a role in broadband matching to improve the transmission quality of radio frequency signals.

[0056] Therefore, in this embodiment, the power amplifier 10 adopts a configuration of N transistors 140 connected in parallel to output a single radio frequency signal. That is, the matching module 30 connected to the output terminal 120 uses a single-ended output matching architecture. Of course, the power amplifier 10 may also include other power amplifier circuits (not shown in the figure). These other power amplifier circuits can serve as the pre-stage of the power amplifier circuit 10, forming a multi-stage power amplifier circuit architecture together with the power amplifier circuit formed by the N transistors 140 connected in parallel.

[0057] In this embodiment, the matching module 30 is connected to the output terminal 120 of the power amplifier 10, and it serves as a bandwidth matching module. Specifically, when the matching module 30 adopts a single-ended output matching architecture, the coupling coefficient K of the first inductor 320 and the second inductor 340 is greater than or equal to -0.2 and less than 0. For example, the coupling coefficient can be -0.2, -0.15, -0.1, -0.05, etc.

[0058] Please refer to the following documents separately. Figure 4 and Figure 5 These are respectively the inventors of this application's... Figure 3 The results are obtained from software simulation of the power amplifier 10 shown. Figure 4 The diagram shows the insertion loss curves for the matching module 30 when the coupling coefficient K is 0, -0.1, -0.2, and -0.3. Figure 4 It is easy to see that the larger the absolute value of the coupling coefficient K, the smaller the insertion loss of the entire matching module 30.

[0059] Figure 5 The diagram shows the real part impedance curves of the matching module 30 when the coupling coefficient K is 0, -0.1, -0.2, and -0.3. Figure 5 It is easy to see that the larger the absolute value of the coupling coefficient K, the more the impedance point of the matching module 30 will be "pulled off course". When the absolute value of the coupling coefficient K is too large, the impedance point of the matching module 30 will deviate from the ideal impedance point, and the overall performance of the power amplifier 10 will deteriorate. Furthermore, the inventors found that when the absolute value of the coupling coefficient K is greater than 0.2, adjusting the parameters of other matching components (e.g., matching capacitors) in the matching module 30 cannot adjust the impedance point of the matching module 30 to the ideal impedance value. Therefore, to ensure the overall performance of the power amplifier 10, the optimal solution for the coupling coefficient K should be greater than or equal to -0.2.

[0060] Of course, in some other possible embodiments, the matching module 30 also adopts a differential output matching architecture. In this case, the coupling coefficient K of the first inductor 320 and the second inductor 340 is greater than or equal to -0.5 and less than 0. This embodiment does not make specific limitations on this.

[0061] The following is based on Figure 3 Taking the circuit diagram shown as an example, the specific implementation of the matching module 30 will be introduced.

[0062] Please see Figure 6 The RF front-end module 100 may also include a substrate 50, which is generally rectangular and serves to fix and support the components (e.g., power amplifier 10, matching module 30, etc.) in the RF front-end module 100. Specifically, the substrate 50 may be a copper-clad laminate. By performing hole processing, chemical copper plating, electroplating, etching, and other processes on the copper-clad laminate, circuits can be printed on the surface of the substrate 50.

[0063] In some possible embodiments, please refer to Figure 7 The substrate 50 may include multiple stacked metal layers 520, with a dielectric layer 540 disposed between each pair of adjacent metal layers 520 to provide electrical isolation. Exemplarily, the metal layers 520 may be used for laying out traces (e.g., equivalent traces of inductors) or for providing grounding metal plates. Furthermore, the top metal layer 520 may also be used to carry electronic components (e.g., chips, surface-mount capacitors, etc.).

[0064] In this embodiment, the first inductor 320 and the second inductor 340 serve as impedance matching components. They can both be wound around the same side of the power amplifier 10 in the same direction of rotation, starting from the common terminal 301. The direction of rotation can be clockwise or counterclockwise. Figure 6 In the embodiment shown, both the first inductor 320 and the second inductor 340 are wound counterclockwise around the same side of the power amplifier 10, starting from the common terminal 301. Figure 6 (The left side of the power amplifier 10 is shown in the middle). In some other possible embodiments, the first inductor 320 and the second inductor 340 are both wound clockwise around the same side of the power amplifier 10, starting from the common terminal 301. This embodiment does not limit the specific winding method of the first inductor 320 and the second inductor 340.

[0065] In one implementation, the first inductor 320 and the second inductor 340 in this embodiment can be wound on the same metal layer 520 using metal traces. For example... Figure 6 As shown, the first inductor 320 may include a first coupling segment 3201, and the second inductor 340 may include a second coupling segment 3401. The first coupling segment 3201 and the second coupling segment 3401 may be spaced apart in a first direction X to achieve mutual coupling. The first direction X may be the width direction of the substrate 50 or the length direction of the substrate 50.

[0066] It is easy to understand that when the distance between the first inductor 320 and the second inductor 340 is small, a "coupling region" will be formed between them. The first coupling segment 3201 can be understood as the portion of the inductance of the first inductor 320 located within the coupling region, and the second coupling segment 3401 can be understood as the portion of the inductance of the second inductor 340 located within the coupling region. Furthermore, since the winding directions of the first inductor 320 and the second inductor 340 are the same, the transmission direction of the radio frequency signal in the first coupling segment 3201 is opposite to that in the second coupling segment 3401, thus achieving reverse coupling between the first coupling segment 3201 and the second coupling segment 3401. Therefore, in this embodiment, the coupling coefficient between the first inductor 320 and the second inductor 340 is negative.

[0067] In some possible embodiments, when the operating frequency band of the RF front-end module 100 is a first frequency band, the minimum spacing between the first coupling segment 3201 and the second coupling segment 3401 is greater than or equal to 40 μm and less than or equal to 200 μm. Here, "minimum spacing" can be understood as the minimum straight-line distance between the first coupling segment 3201 and the second coupling segment 3401 in the first direction X. For example, the aforementioned minimum spacing can be 40 μm, 80 μm, 120 μm, 160 μm, 200 μm, etc.

[0068] When the operating frequency band of the RF front-end module 100 is the second frequency band, the minimum spacing between the first coupling section 3201 and the second coupling section 3401 is greater than or equal to 40μm and less than or equal to 150μm. For example, the minimum spacing can be 40μm, 80μm, 100μm, 120μm, 150μm, etc.

[0069] Specifically, the frequency of the second frequency band is higher than that of the first frequency band. In some possible embodiments, the frequency of the first frequency band is greater than or equal to 1.7 GHz and less than or equal to 2 GHz. The frequency of the second frequency band is greater than or equal to 2.3 GHz and less than or equal to 2.7 GHz. That is, the first frequency band can be a mid-frequency band, and the second frequency band can be a high-frequency band. Furthermore, in some possible scenarios, both the first and second frequency bands belong to the sub-3 GHz band.

[0070] Therefore, in this embodiment, when the RF front-end module 100 operates in the high-frequency band (i.e., the second frequency band), a relatively small spacing can be used between the first coupling segment 3201 and the second coupling segment 3401 to make the layout of the first inductor 320 and the second inductor 340 on the substrate 50 more compact.

[0071] Furthermore, it is easy to understand that the spacing between the first coupling segment 3201 and the second coupling segment 3401 is negatively correlated with the absolute value of the coupling coefficient K. That is, the larger the spacing between the first coupling segment 3201 and the second coupling segment 3401, the smaller the absolute value of the coupling coefficient K. Therefore, researchers can flexibly adjust the spacing between the first coupling segment 3201 and the second coupling segment 3401 based on the magnitude of the absolute value of the coupling coefficient K.

[0072] In some possible embodiments, when the operating frequency band of the RF front-end module 100 is a first frequency band, the inductance of the first coupling section 3201 is greater than or equal to 0.01nH and less than or equal to 0.2nH. Exemplarily, the inductance of the first coupling section 3201 can be 0.01nH, 0.05nH, 0.1nH, 0.2nH, etc. Since the inductance of the first coupling section 3201 is positively correlated with the length of the first coupling section 3201, the ratio of the length of the first coupling section 3201 to the length of the first inductor 320 is greater than or equal to 0.1 and less than or equal to 0.4. Exemplarily, this ratio can be 0.1, 0.2, 0.3, 0.4, etc.

[0073] When the operating frequency band of the RF front-end module 100 is the second frequency band, the inductance of the first coupling section 3201 is greater than or equal to 0.01nH and less than or equal to 0.15nH. For example, the inductance of the first coupling section 3201 can be 0.01nH, 0.05nH, 0.1nH, 0.15nH, etc. Since the inductance of the first coupling section 3201 is positively correlated with its length, the ratio of the length of the first coupling section 3201 to the length of the first inductor 320 is greater than or equal to 0.1 and less than or equal to 0.3. For example, this ratio can be 0.1, 0.2, 0.3, etc.

[0074] Therefore, in this embodiment, when the RF front-end module 100 operates in the high-frequency band (i.e., the second frequency band), the first coupling section 3201 can use a relatively small inductance (i.e., trace length) to save the winding space of the first inductor 320 on the substrate 50.

[0075] In some possible embodiments, when the operating frequency band of the RF front-end module 100 is the first frequency band, the inductance of the second coupling section 3401 is greater than or equal to 0.01nH and less than or equal to 0.2nH. Exemplarily, the inductance of the second coupling section 3401 can be 0.01nH, 0.05nH, 0.1nH, 0.2nH, etc. Since the inductance of the second coupling section 3401 is positively correlated with the length of the second coupling section 3401, the ratio of the length of the second coupling section 3401 to the length of the second inductor 340 is greater than or equal to 0.1 and less than or equal to 0.4. Exemplarily, this ratio can be 0.1, 0.2, 0.3, 0.4, etc.

[0076] When the operating frequency band of the RF front-end module 100 is the second frequency band, the inductance of the second coupling section 3401 is greater than or equal to 0.01nH and less than or equal to 0.15nH. For example, the inductance of the second coupling section 3401 can be 0.01nH, 0.05nH, 0.1nH, 0.15nH, etc. Since the inductance of the second coupling section 3401 is positively correlated with the length of the second coupling section 3401, the ratio of the length of the second coupling section 3401 to the length of the second inductor 340 is greater than or equal to 0.1 and less than or equal to 0.3. For example, this ratio can be 0.1, 0.2, 0.3, etc.

[0077] Therefore, in this embodiment, when the RF front-end module 100 operates in the high-frequency band (i.e., the second frequency band), the second coupling section 3401 can use a relatively small inductance (i.e., trace length) to save the winding space of the second inductor 340 on the substrate 50.

[0078] Furthermore, it is easy to understand that the inductance of the first coupling segment 3201 and the inductance of the second coupling segment 3401 are positively correlated with the absolute value of the coupling coefficient K. That is, the larger the inductance of the first coupling segment 3201, the larger the absolute value of the coupling coefficient K. Similarly, the larger the inductance of the second coupling segment 3401, the larger the absolute value of the coupling coefficient K. Therefore, researchers can flexibly adjust the inductance of the first coupling segment 3201 and / or the inductance of the second coupling segment 3401 based on the absolute value of the coupling coefficient K.

[0079] In another implementation, the first inductor 320 and the second inductor 340 in this embodiment can be wound on different metal layers 520 using metal traces. Please refer to [link / reference]. Figure 8 The first inductor 320 may include a third coupling segment 3203, and the second inductor 340 may include a fourth coupling segment 3403. The projection of the third coupling segment 3203 in the thickness direction of the substrate 50 overlaps with at least a portion of the fourth coupling segment 3403 to achieve mutual coupling.

[0080] It is easy to understand that when the distance between the first inductor 320 and the second inductor 340 is small, for example, when they are located on two adjacent metal layers 520, a "coupling region" is formed between them. The third coupling segment 3203 can be understood as the portion of the inductance in the first inductor 320 located within the coupling region, and the fourth coupling segment 3403 can be understood as the portion of the inductance in the second inductor 340 located within the coupling region. Furthermore, since the winding directions of the first inductor 320 and the second inductor 340 are the same, the transmission direction of the radio frequency signal in the third coupling segment 3203 is opposite to that in the fourth coupling segment 3403, thus achieving reverse coupling between the third coupling segment 3203 and the fourth coupling segment 3403. Therefore, in this embodiment, the coupling coefficient between the first inductor 320 and the second inductor 340 is negative.

[0081] In some possible embodiments, when the operating frequency band of the RF front-end module 100 is the first frequency band, the ratio of the length of the third coupling segment 3203 to the length of the first inductor 320 is greater than or equal to 0.1 and less than or equal to 0.3. Exemplarily, the above ratio can be 0.1, 0.2, 0.3, etc. The ratio of the length of the fourth coupling segment 3403 to the length of the second inductor 340 is greater than or equal to 0.1 and less than or equal to 0.3. Exemplarily, the above ratio can be 0.1, 0.2, 0.3, etc.

[0082] When the operating frequency band of the RF front-end module 100 is the second frequency band, the ratio of the length of the third coupling segment 3203 to the length of the first inductor 320 is greater than or equal to 0.1 and less than or equal to 0.2. For example, the ratio can be 0.1, 0.15, 0.2, etc. The ratio of the length of the fourth coupling segment 3403 to the length of the second inductor 340 is greater than or equal to 0.1 and less than or equal to 0.2. For example, the ratio can be 0.1, 0.15, 0.2, etc.

[0083] Therefore, in this embodiment, when the RF front-end module 100 operates in the high-frequency band (i.e., the second frequency band), the third coupling section 3203 and the fourth coupling section 3403 can respectively adopt relatively small inductance (i.e., trace length) to save the winding space of the first inductor 320 and the second inductor 340 on the substrate 50.

[0084] Please refer to it again. Figure 3 The matching module 30 may further include a first capacitor 360 and a second capacitor 380, which respectively serve the function of impedance matching. The common terminal 301 is connected to the output terminal 120 of the power amplifier 10 through the first capacitor 360. Furthermore, in this embodiment, the first capacitor 360 also serves as a signal isolation device, preventing the DC voltage (VCC) output from the output terminal 120 from flowing into the matching module 30, thus ensuring the normal operation of the power amplifier 10. One end of the second capacitor 380 is connected to the other end of the second inductor 340, and the other end of the second capacitor 380 is grounded. Therefore, Figure 3 The matching module 30 shown adopts a CLLC-type matching network architecture.

[0085] Please refer to it again. Figure 6 The power amplifier 10 and the first capacitor 360 are integrated within the chip 70, which is disposed on the substrate 50. For example, the chip 70 can be fixed to the substrate 50 using a flip-chip process or a bonding process to improve the overall integration of the RF front-end module 100. Specifically, the chip 70 has a connection terminal 702, and the first capacitor 360 is connected between the connection terminal 702 and the output terminal 120 of the power amplifier 10. Exemplarily, the first capacitor 360 can be a multilayer capacitor disposed on the chip 70. In some possible embodiments, the chip 70 can be an HBT chip.

[0086] Therefore, in this embodiment, the first capacitor 360 is integrated into the chip 70, which can save the layout space of the matching module 30 on the substrate 50 and is conducive to the miniaturization design of the RF front-end module 100.

[0087] exist Figure 6In the illustrated embodiment, the first inductor 320 and the second inductor 340 are wound around the same side of the chip 70 and are respectively connected to the connection terminal 702. The first inductor 320 and the second inductor 340 are sequentially arranged in the first direction X, the first inductor 320 and the chip 70 are sequentially arranged in the second direction Y, and the second inductor 340 and the chip 70 are sequentially arranged in the second direction Y. The first direction X and the second direction Y intersect. Specifically, the first direction X and the second direction Y are perpendicular. For example, the first direction X can be the width direction of the substrate 50, and the second direction Y can be the length direction of the substrate 50; or, for instance, the first direction X can be the length direction of the substrate 50, and the second direction Y can be the width direction of the substrate 50.

[0088] Specifically, the second inductor 340 may include a first connection segment 3410, which is connected to the chip 70 and wound around the substrate 50.

[0089] Both the first inductor 320 and the first connecting segment 3410 are wound around the same metal layer 520 in the same direction of rotation, starting from the connecting terminal 702. The first inductor 320 and the first connecting segment 3410 are spaced apart to achieve mutual coupling. The direction of rotation can be clockwise or counterclockwise. The chip 70 also has a ground terminal 704, and the other end of the first inductor 320 is connected to the ground terminal 704.

[0090] Specifically, in Figure 6 In the embodiment shown, one end of the first inductor 320 is connected to the connection terminal 702, and is wound around the substrate 50 in a counterclockwise direction starting from this end. The other end of the first inductor 320 is connected to the ground terminal 704.

[0091] One end of the first connecting segment 3410 is connected to the connecting end 702, and starting from this end, it is wound counterclockwise around the substrate 50, and is spaced apart from the first inductor 320 in the first direction X. Figure 6 In the embodiment shown, the second inductor 340 may further include a second connecting segment 3430, one end of which is connected to the other end of the first connecting segment 3410, and is wound around the substrate 50 in a counterclockwise direction starting from that end. The other end of the second connecting segment 3430 is connected to the second capacitor 380.

[0092] Specifically, the second connecting segment 3430 and the first connecting segment 3410 are wound on different metal layers 520, and the second connecting segment 3430 and the first connecting segment 3410 can be electrically connected through metal vias disposed on the dielectric layer 540. Therefore, the second inductor 340 in this embodiment may include the connected first connecting segment 3410 and the second connecting segment 3430.

[0093] In this embodiment, the second capacitor 380 is disposed on the substrate 50, and the second capacitor 380 and the chip 70 are respectively located on opposite sides of the second inductor 340. Specifically, the second capacitor 380 can be a surface-mount capacitor. As one implementation, the second connection segment 3430 can be wound around the top metal layer 520 among the multiple metal layers 520, so that the second connection segment 3430 and the second capacitor 380 do not need to be connected through metal vias, making the overall layout of the matching module 30 more compact.

[0094] Therefore, in this embodiment, the second inductor 340 is implemented by segmenting its winding on multiple metal layers 520, which makes the wiring layout of the second inductor 340 more flexible and the connection between it and the second capacitor 380 more flexible and reasonable.

[0095] In some other possible embodiments, such as Figure 8 As shown, the second inductor 340 may include a first connecting segment 3410 and a second connecting segment 3430 connected together. The first connecting segment 3410, the second connecting segment 3430, and the first inductor 320 may be wound around different metal layers 520 respectively. The projection of the first connecting segment 3410 in the thickness direction of the substrate 50 overlaps with at least a portion of the first inductor 320 to achieve mutual coupling. Since the first connecting segment 3410 and the first inductor 320 are located on different metal layers 520, compared to… Figure 6 The embodiment shown can further save the layout space of the substrate 50 to achieve a miniaturized design of the RF front-end module 100.

[0096] This application provides a radio frequency (RF) front-end module 100, which may include a power amplifier 10 and a matching module 30. The matching module 30 is connected to the output terminal 120 of the power amplifier 10. The matching module 30 may include a first inductor 320 and a second inductor 340 connected together. Specifically, the coupling coefficient K of the first inductor 320 and the second inductor 340 is greater than or equal to -0.5 and less than 0. For example, the coupling coefficient can be -0.4, -0.3, -0.2, -0.1, etc. Therefore, in this embodiment, the coupling coefficient of the first inductor 320 and the second inductor 340 is negative, meaning that the coupled inductance formed by the coupling of the first inductor 320 and the second inductor 340 is negative, i.e., the coupled inductance is capacitive.

[0097] Under the influence of the coupling inductors, the effective inductance of the first inductor 320 will be greater than its actual inductance, and the effective inductance of the second inductor 340 will also be greater than its actual inductance. Therefore, when the effective inductance values ​​of both the first and second inductors 320 and 340 are increased compared to their actual inductance values, the quality factors (i.e., Q values) of the first and second inductors 320 and 340 can be increased, thereby effectively reducing the insertion loss of the matching module 30 and improving the output quality of the RF signal.

[0098] This application embodiment also provides a radio frequency (RF) front-end module 100, which may include a power amplifier 10 and a matching module 30. The matching module 30 is connected to the output terminal 120 of the power amplifier 10. The matching module 30 may include a first inductor 320 and a second inductor 340 connected together, and the first inductor 320 and the second inductor 340 are coupled to form a coupling region. Specifically, the transmission direction of the RF signal in the first inductor 320 within the coupling region is opposite to the transmission direction of the RF signal in the second inductor 340 within the coupling region.

[0099] Since the transmission direction of the radio frequency signal in the first inductor 320 within the coupling region is opposite to the transmission direction of the radio frequency signal in the second inductor 340 within the coupling region, it indicates that the coupling coefficient of the first inductor 320 and the second inductor 340 is negative. In other words, the coupled inductance formed by the coupling of the first inductor 320 and the second inductor 340 is negative, that is, the coupled inductance is capacitive.

[0100] Under the influence of the coupling inductors, the effective inductance of the first inductor 320 will be greater than its actual inductance, and the effective inductance of the second inductor 340 will also be greater than its actual inductance. This increases the quality factor (i.e., Q value) of both the first and second inductors 320. With the Q values ​​of both the first and second inductors 320 increasing, the insertion loss of the matching module 30 can be effectively reduced, thereby improving the output quality of the RF signal.

[0101] In some possible embodiments, the coupling coefficient K of the first inductor 320 and the second inductor 340 is greater than or equal to -0.5 and less than 0.

[0102] In some possible embodiments, the power amplifier 10 may include N transistors 140, the output terminals 120 of which are connected to form the output terminal 120 of the power amplifier 10, which is used to output a radio frequency signal; where N is a positive integer. The coupling coefficient N of the first inductor 320 and the second inductor 340 is greater than or equal to -0.2 and less than 0.

[0103] In some possible embodiments, one end of the first inductor 320 is connected to one end of the second inductor 340 to form a common terminal 301, which is connected to the output terminal 120 of the power amplifier 10. The other end of the first inductor 320 is grounded, and the other end of the second inductor 340 is used to output radio frequency signals. The first inductor 320 and the second inductor 340 are both wound around the same side of the power amplifier 10 with the common terminal 301 as the starting point and in the same rotation direction. The first inductor 320 and at least a portion of the second inductor 340 are spaced apart, and the rotation direction is clockwise or counterclockwise.

[0104] In some possible embodiments, the first inductor 320 includes a first coupling segment 3201, and the second inductor 340 includes a second coupling segment 3401. The first coupling segment 3201 and the second coupling segment 3401 are spaced apart to achieve mutual coupling. The transmission direction of the radio frequency signal in the first coupling segment 3201 is opposite to the transmission direction of the radio frequency signal in the second coupling segment 3401.

[0105] Specifically, the features of the power amplifier 10, matching module 30, first inductor 320 and second inductor 340 can be referred to and followed from the relevant descriptions in the above embodiments. To save space, they will not be described in detail here.

[0106] Furthermore, other features in the above embodiments can also be incorporated into this embodiment without conflict. For example, the features of the first capacitor 360 and the second capacitor 380 in the above embodiments can also be incorporated into the matching module 30 in this embodiment. To save space, they will not be described in detail here.

[0107] Please see Figure 9 This embodiment also provides an electronic device 500, which can be a 4G or 5G communication device such as a smartphone, tablet, or smartwatch. Specifically, the electronic device 500 may include the radio frequency front-end module 100 in the above embodiment to realize the reception and transmission of radio frequency signals.

[0108] Furthermore, with the development of 5G technology, the requirements for the performance of radio frequency front-end modules are becoming increasingly stringent. The technical solution of this application can be applied to 5G radio frequency front-end modules to improve the communication performance of 5G communication equipment.

[0109] In this application specification, certain terms are used to refer to specific components. Those skilled in the art will understand that hardware manufacturers may use different names to refer to the same component. The specification and claims do not distinguish components based on differences in name, but rather on differences in function. The term "comprising" throughout the specification and claims is an open-ended term and should be interpreted as "including but not limited to"; "generally" means that those skilled in the art can solve the technical problem within a certain margin of error and basically achieve the technical effect.

[0110] In the description of this application, it should be understood that the terms "upper", "lower", "front", "back", "left", "right", "inside", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the purpose of simplifying the description of this application and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0111] In this application, unless otherwise expressly specified or limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or merely surface contact. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0112] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0113] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0114] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application.

Claims

1. A radio frequency front-end module, characterized in that, include: Power amplifier; as well as A matching module is connected to the output terminal of the power amplifier; the matching module includes a first inductor and a second inductor connected together, the coupling coefficient of the first inductor and the second inductor being greater than or equal to -0.5 and less than 0.

2. The radio frequency front-end module according to claim 1, characterized in that, The power amplifier includes N transistors, and the output terminals of the N transistors are connected to form the output terminal of the power amplifier. The output terminal of the power amplifier is used to output one radio frequency signal; where N is a positive integer. The coupling coefficient between the first inductor and the second inductor is greater than or equal to -0.2 and less than 0.

3. The radio frequency front-end module according to claim 1, characterized in that, One end of the first inductor is connected to one end of the second inductor to form a common terminal, which is connected to the output terminal of the power amplifier. The other end of the first inductor is grounded, and the other end of the second inductor is used to output radio frequency signals. The first inductor and the second inductor are both wound around the same side of the power amplifier with the common terminal as the starting point and in the same rotation direction; the rotation direction is either clockwise or counterclockwise.

4. The radio frequency front-end module according to claim 3, characterized in that, The radio frequency front-end module also includes a substrate, which includes multiple stacked metal layers, and the first inductor and the second inductor are wound on the same metal layer. The first inductor includes a first coupling segment, and the second inductor includes a second coupling segment. The first coupling segment and the second coupling segment are spaced apart to achieve mutual coupling. The transmission direction of the radio frequency signal in the first coupling segment is opposite to the transmission direction of the radio frequency signal in the second coupling segment.

5. The radio frequency front-end module according to claim 4, characterized in that, The operating frequency band of the radio frequency front-end module is the first frequency band, and the minimum spacing between the first coupling segment and the second coupling segment is greater than or equal to 40μm and less than or equal to 200μm. or The operating frequency band of the radio frequency front-end module is the second frequency band, and the minimum spacing between the first coupling segment and the second coupling segment is greater than or equal to 40μm and less than or equal to 150μm; wherein, the frequency of the second frequency band is higher than the frequency of the first frequency band.

6. The radio frequency front-end module according to claim 4, characterized in that, The operating frequency band of the RF front-end module is a first frequency band, and the inductance of the first coupling section is greater than or equal to 0.01nH and less than or equal to 0.2nH; or, the ratio of the length of the first coupling section to the length of the first inductor is greater than or equal to 0.1 and less than or equal to 0.4; or The operating frequency band of the radio frequency front-end module is the second frequency band, the inductance of the first coupling section is greater than or equal to 0.01nH and less than or equal to 0.15nH; or, the ratio of the length of the first coupling section to the length of the first inductor is greater than or equal to 0.1 and less than or equal to 0.3; wherein, the frequency of the second frequency band is higher than the frequency of the first frequency band.

7. The radio frequency front-end module according to claim 4, characterized in that, The operating frequency band of the RF front-end module is the first frequency band; the inductance of the second coupling section is greater than or equal to 0.01nH and less than or equal to 0.2nH; or, the ratio of the length of the second coupling section to the length of the second inductor is greater than or equal to 0.1 and less than or equal to 0.4; or The operating frequency band of the radio frequency front-end module is the second frequency band, the inductance of the second coupling section is greater than or equal to 0.01nH and less than or equal to 0.15nH; or, the ratio of the length of the second coupling section to the length of the second inductor is greater than or equal to 0.1 and less than or equal to 0.3; wherein, the frequency of the second frequency band is higher than the frequency of the first frequency band.

8. The radio frequency front-end module according to claim 3, characterized in that, The radio frequency front-end module also includes a substrate, which includes multiple stacked metal layers, and the first inductor and the second inductor are wound on different metal layers. The first inductor includes a third coupling segment, and the second inductor includes a fourth coupling segment. The projection of the third coupling segment in the thickness direction of the substrate overlaps with at least a portion of the fourth coupling segment to achieve mutual coupling. The transmission direction of the radio frequency signal in the third coupling segment is opposite to the transmission direction of the radio frequency signal in the fourth coupling segment.

9. The radio frequency front-end module according to claim 8, characterized in that, The operating frequency band of the RF front-end module is the first frequency band; the ratio of the length of the third coupling segment to the length of the first inductor is greater than or equal to 0.1 and less than or equal to 0.3; or, the ratio of the length of the fourth coupling segment to the length of the second inductor is greater than or equal to 0.1 and less than or equal to 0.3; or The operating frequency band of the radio frequency front-end module is the second frequency band, and the ratio of the length of the third coupling segment to the length of the first inductor is greater than or equal to 0.1 and less than or equal to 0.2; or, the ratio of the length of the fourth coupling segment to the length of the second inductor is greater than or equal to 0.1 and less than or equal to 0.2; wherein, the frequency of the second frequency band is higher than the frequency of the first frequency band.

10. The radio frequency front-end module according to any one of claims 5, 6, 7, and 9, characterized in that, The frequency of the first frequency band is greater than or equal to 1.7 GHz and less than or equal to 2 GHz; the frequency of the second frequency band is greater than or equal to 2.3 GHz and less than or equal to 2.7 GHz.

11. The radio frequency front-end module according to claim 3, characterized in that, The matching module also includes a first capacitor and a second capacitor; The common terminal is connected to the output terminal of the power amplifier through the first capacitor; one end of the second capacitor is connected to the other end of the second inductor, and the other end of the second capacitor is grounded.

12. The radio frequency front-end module according to claim 11, characterized in that, The radio frequency front-end module also includes a substrate, the power amplifier and the first capacitor are integrated in the chip, and the chip is disposed on the substrate; The chip is provided with a connection terminal, and the first capacitor is connected between the connection terminal and the output terminal of the power amplifier. The first inductor and the second inductor are wound on the same side of the chip and are respectively connected to the connection terminal.

13. The radio frequency front-end module according to claim 12, characterized in that, The first inductor and the second inductor are arranged sequentially in the first direction; The first inductor and the chip are arranged sequentially in a second direction, and the second inductor and the chip are arranged sequentially in a second direction, which intersects with the first direction.

14. The radio frequency front-end module according to claim 12, characterized in that, The substrate includes multiple stacked metal layers; the second inductor includes a first connection segment, which is connected to the chip and wound around the substrate. Both the first inductor and the first connecting segment are wound around the same metal layer in the same direction of rotation, starting from the connecting end. The first inductor and the first connecting segment are spaced apart to achieve mutual coupling. The direction of rotation is either clockwise or counterclockwise.

15. The radio frequency front-end module according to claim 14, characterized in that, The chip also has a ground terminal, and the other end of the first inductor is connected to the ground terminal.

16. The radio frequency front-end module according to claim 14, characterized in that, The second inductor further includes a second connecting segment, one end of which is connected to the first connecting segment, and the other end of which is connected to the second capacitor; The second connecting segment and the first connecting segment are wound on different metal layers.

17. The radio frequency front-end module according to claim 12, characterized in that, The second capacitor is disposed on the substrate, and the second capacitor and the chip are respectively located on opposite sides of the second inductor.

18. A radio frequency front-end module, characterized in that, include: Power amplifier; as well as A matching module is connected to the output terminal of the power amplifier; the matching module includes a first inductor and a second inductor connected together, and the first inductor and the second inductor are coupled to form a coupling region; The direction of radio frequency signal transmission in the first inductor within the coupling region is opposite to the direction of radio frequency signal transmission in the second inductor within the coupling region.

19. The radio frequency front-end module according to claim 18, characterized in that, The coupling coefficient between the first inductor and the second inductor is greater than or equal to -0.5 and less than 0.

20. The radio frequency front-end module according to claim 19, characterized in that, The power amplifier includes N transistors, and the output terminals of the N transistors are connected to form the output terminal of the power amplifier. The output terminal of the power amplifier is used to output one radio frequency signal; where N is a positive integer. The coupling coefficient between the first inductor and the second inductor is greater than or equal to -0.2 and less than 0.

21. The radio frequency front-end module according to any one of claims 18 to 20, characterized in that, One end of the first inductor is connected to one end of the second inductor to form a common terminal, which is connected to the output terminal of the power amplifier. The other end of the first inductor is grounded, and the other end of the second inductor is used to output radio frequency signals. The first inductor and the second inductor are both wound around the same side of the power amplifier with the common terminal as the starting point and in the same rotation direction; the first inductor and at least part of the second inductor are spaced apart; the rotation direction is clockwise or counterclockwise.

22. The radio frequency front-end module according to claim 21, characterized in that, The first inductor includes a first coupling segment, and the second inductor includes a second coupling segment. The first coupling segment and the second coupling segment are spaced apart to achieve mutual coupling. The transmission direction of the radio frequency signal in the first coupling segment is opposite to the transmission direction of the radio frequency signal in the second coupling segment.

23. An electronic device, characterized in that, include: The radio frequency front-end module as described in any one of claims 1 to 22.

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