Process chamber and semiconductor process equipment
By designing a connection structure between the base and the hemisphere in the process chamber and using a motor to drive the base to tilt and oscillate, the problem of uneven copper seed layer deposition was solved, and uniform deposition of copper atoms in the wafer vias was achieved, thus improving product yield.
Patent Information
- Application Number
- CN202422705988.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-06
- Publication Date
- 2025-11-07
- Estimated Expiration
- 2034-11-06
AI Technical Summary
In existing technologies, the uneven deposition of the copper seed layer within the wafer vias leads to frequent copper defects in subsequent electroplating processes, affecting product yield.
A process chamber is designed by fixing a base to a hemisphere and using a motor to drive the base to make undulating motion at a specified tilt angle, which ensures that the contact force between copper atoms and the sidewalls of the via is increased, thus achieving uniform deposition.
This improved the coverage of the copper seed layer within the wafer vias, reduced copper defects, and increased product yield.
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Figure CN223522650U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the technical field of semiconductor process, in particular to a process chamber and a semiconductor process equipment. BACKGROUND
[0002] In the related art, in a PVD (Physical Vapor Deposition) process, a copper seed layer as a pre-layer of a copper electroplating step plays a very key role in the quality of the electroplated copper layer. The copper seed layer needs to be uniformly deposited to the bottom and sidewall of a via of a wafer to ensure the quality of the subsequent electroplating process, which helps to reduce the generation of copper defects and improve product yield. The mainstream machine process principle is to use plasma to bombard a copper target to make separated copper atoms deposit to the inner surface of the via. This type of deposition makes the deposition effect of the copper atoms on the sidewall of the via worse than that on the bottom, which can lead to copper defect problems in the subsequent electroplating step. CONTENT OF THE INVENTION
[0003] The present application aims to provide a process chamber and a semiconductor process equipment, which can improve the coverage of the copper seed layer in the via of the wafer, effectively inhibit the generation of subsequent copper defects, and improve product yield.
[0004] According to a first aspect of an embodiment of the present application, a process chamber is provided, comprising: a cavity, a hollow pillar, a base, a hemisphere, a connecting rod, and a first motor;
[0005] One end of the hollow pillar is located at the bottom of the cavity, and the other end is provided with a semispherical groove, and the bottom of the semispherical groove is provided with a through hole;
[0006] The hemisphere is located in the semispherical groove, the upper surface of the hemisphere is a plane, the upper surface is fixedly connected with the lower surface of the base, the base is used for carrying a wafer, a part of the hemispherical surface of the hemisphere is located in the semispherical groove, and the hemispherical surface of the hemisphere is complementary to the inner surface of the semispherical groove; when the upper surface is perpendicular to the sidewall of the hollow pillar, the upper surface protrudes from the semispherical groove;
[0007] The top end of the connecting rod is fixedly connected with the vertex of the hemispherical surface of the hemisphere through the through hole; the first motor is located in the hollow pillar and at the bottom of the hollow pillar, and the first motor is used for driving the base to make a fluctuation motion at a specified inclination angle by acting on the bottom end of the connecting rod.
[0008] In an embodiment, the process chamber further comprises a guide rail, a first gear, and a second gear.
[0009] The guide rail is located at the bottom of the hollow support column, the first motor is located on the guide rail, the first motor can move along the guide rail, or the guide rail can carry the first motor to move together;
[0010] The first gear is located at the bottom end of the connecting rod and is fixedly connected with the bottom end of the connecting rod;
[0011] The first motor comprises a rotating shaft, the rotating shaft is located on the side of the first motor away from the guide rail, the extending direction of the rotating shaft is parallel to the side wall of the hollow support column, the second gear is located at one end of the rotating shaft close to the base, and the second gear is fixedly connected with the rotating shaft;
[0012] When the first motor moves to the position of the central axis of the connecting rod, the connecting rod is inclined, the first gear is engaged with the second gear, and the first motor drives the base to make a fluctuation motion at a specified inclination angle by rotating the rotating shaft.
[0013] In an embodiment, when the first motor can move along the guide rail, the guide rail comprises a second motor, and the second motor is used to drive the first motor to move along the guide rail.
[0014] In an embodiment, when the guide rail can carry the first motor to move together, the first motor is fixed on the guide rail, and the process chamber further comprises a third motor, the third motor is located in the hollow support column and at the bottom of the hollow support column, and the third motor is used to drive the guide rail to move.
[0015] In an embodiment, the process chamber further comprises N springs, N is an integer greater than 2;
[0016] For each spring, one end of the spring is fixedly connected with the connecting rod, and the other end is fixedly connected with the inner wall of the hollow support column; the connecting point of the spring and the connecting rod is located at any position between the top end and the bottom end of the connecting rod;
[0017] The N springs are located in the same plane, the plane is parallel to the lower surface of the base, and the included angle between adjacent two springs is 360° / N.
[0018] In an embodiment, the connecting point of the spring and the connecting rod is located at the central position between the top end and the bottom end of the connecting rod.
[0019] In an embodiment, N is 3.
[0020] In an embodiment, the inclination angle is
[0021] ;
[0022] ;
[0023] ;
[0024] wherein, is a radius of the first gear, is a radius of the second gear, is a distance between the center of the first gear and the center of the sphere, is a distance between the center of the second gear and the center of the sphere.
[0025] In an embodiment, the process chamber further comprises a plurality of balls, the plurality of balls being located between an inner surface of the semi-spherical groove and a spherical surface of the sphere.
[0026] According to a second aspect of the embodiments herein, there is provided a semiconductor process equipment comprising the process chamber as described above.
[0027] Compared with the prior art, the application has the beneficial effects that: by fixing the base for carrying the wafer and the sphere, and placing the sphere in the semi-spherical groove of the hollow support column, and by driving the sphere by the motor to drive the base to make a fluctuation motion at a specified inclination angle, the wafer can be driven to make a fluctuation motion at a specified inclination angle, so that when the process chamber is used to deposit a copper seed layer in the through hole of the wafer, the copper atoms falling will no longer be parallel to the side wall of the through hole, and can easily be deposited at the position of the side wall of the through hole, and the contact force of the copper atoms with the side wall of the through hole also increases, so that the adhesion of the copper atoms is better, and thus the coverage of the copper seed layer in the through hole of the wafer can be improved, and the generation of subsequent copper defects can be effectively inhibited, and the product yield can be improved. BRIEF DESCRIPTION OF DRAWINGS
[0028] Figure 1 is a schematic diagram of a copper seed deposition method shown by the related art.
[0029] Figure 2 is a schematic diagram of a structure of a process chamber according to an exemplary embodiment.
[0030] Figure 3 is a schematic diagram of a working principle of a process chamber according to an exemplary embodiment.
[0031] Figure 4 is a schematic diagram of an inclination angle of a wafer according to an exemplary embodiment.
[0032] Figure 5 is a schematic diagram of an inclination angle of a wafer according to another exemplary embodiment.
[0033] Figure 6 is a structural schematic diagram of a process chamber shown in the related art. DETAILED DESCRIPTION
[0034] Unless otherwise defined, technical and scientific terms used in this specification and claims shall have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. In the following description, specific details are outlined in order to provide a thorough understanding of the embodiments of the application. However, persons of ordinary skill in the art will realize that the application can be practiced without some or all of the details. In other instances, well-known processes have not been described in detail in order not to unnecessarily obscure the application.
[0035] In the related art, in a deposition process, a wafer is in a static state, as shown in Figure 1 The sidewall W1 of the via hole 12 on the surface F1 of the wafer 11 is almost perpendicular to the surface F1 of the wafer 11, especially the via hole 12 under an advanced process, which has a greater aspect ratio, which makes it difficult for copper atoms 13 to deposit at the position of the sidewall W1 in the process of physical deposition, and the adhesion of the deposited copper atoms 13 is also poor due to the almost parallel direction D1 of the falling copper atoms 13 and the extension direction of the sidewall W1.
[0036] To solve the above technical problems, the application provides a process chamber and a semiconductor process equipment, which can improve the coverage of the copper seed layer in the via hole of the wafer, effectively suppress the generation of subsequent copper defects, and improve the product yield.
[0037] An embodiment of the application provides a process chamber. The process chamber can be applied to a semiconductor process equipment, for example, a physical vapor deposition equipment, but is not limited to this. Please refer to Figure 2 The process chamber can include a cavity 21, a hollow pillar 22, a base 23, a hemisphere 24, a connecting rod 25, a first motor 26, a clamping ring 27, a target material 28, and a baffle 29.
[0038] As shown in Figure 2 One end of the hollow pillar 22 is located at the bottom B1 of the cavity 21, and the other end is provided with a semispherical groove G, and the bottom of the semispherical groove G is provided with a through hole H.
[0039] As shown in Figure 2As shown, the hemisphere 24 is located in the hemispherical groove G, the upper surface F2 of the hemisphere 24 is a plane, the upper surface F2 is fixedly connected with the lower surface F3 of the base 23, the base 23 is used for bearing the wafer 11, the hemispherical surface of the hemisphere 24 is located in the hemispherical groove G, and the hemispherical surface of the hemisphere 24 is complementary to the inner surface of the hemispherical groove G, so that the hemisphere 24 can rotate in the hemispherical groove G, and the base 23 can be swung up and down. When the upper surface F2 of the hemisphere 24 is perpendicular to the side wall W2 of the hollow column 22, the upper surface F2 of the hemisphere 24 protrudes from the hemispherical groove G.
[0040] As shown in Figure 2 the top end T2 of the connecting rod 25 is fixedly connected with the vertex of the hemispherical surface of the hemisphere 24 through the through hole H. The vertex of the hemispherical surface is the intersection of the central axis of the hemisphere 24 and the hemispherical surface of the hemisphere 24.
[0041] As shown in Figure 2 the first motor 26 is located in the hollow column 22 and at the bottom B2 of the hollow column 22, and the first motor 26 can drive the base 23 to swing at a specified inclination angle by acting on the bottom end D of the connecting rod 25.
[0042] As shown in Figure 2 When the upper surface F2 of the hemisphere 24 is perpendicular to the side wall W2 of the hollow column 22, the upper surface F2 of the hemisphere 24 protrudes from the hemispherical groove G, and the distance h between the lower surface F3 of the base 23 and the horizontal portion of the hollow column 22 on which the hemispherical groove G is arranged can be determined according to actual conditions to avoid collision between the lower surface F3 of the base 23 and the hollow column 22 when the base 23 swings at a specified inclination angle.
[0043] As shown in Figure 2 The target material 28 is arranged at the top end T1 inside the cavity 21. For example, when it is required to deposit a copper seed layer on the bottom and sidewall of a via of the wafer 11, the target material 28 can be a copper target material.
[0044] As shown in Figure 2 The clamping ring 27 is arranged on the base 23, and the clamping ring 27 is used for clamping the wafer 11 placed on the base 23 to fix the wafer 11.
[0045] As shown in Figure 2 The baffle 29 is arranged around the space between the target material 28 and the wafer 11 to avoid contamination of the cavity 21 by the material of the target material 28 when the target material 28 is bombarded.
[0046] In the embodiment of the present application, when the process chamber is used to deposit the copper seed layer in the through hole of the wafer 11, the first motor 26 can drive the base 23 to make a fluctuation motion at a specified oblique angle by acting on the bottom end D of the connecting rod 25, so that the copper atoms are no longer parallel to the sidewall of the through hole when falling, and are easily deposited at the sidewall position of the through hole, and the contact force between the copper atoms and the sidewall of the through hole is also increased, so that the adhesion of the copper atoms is better, and thus the coverage and deposition quality of the copper seed layer in the through hole of the wafer can be improved, and the generation of subsequent copper defects can be effectively inhibited, and the product yield can be improved.
[0047] In one embodiment, the first motor 26 can drive the base 23 to make a uniform fluctuation motion at a specified oblique angle by acting on the bottom end of the connecting rod 25, and thus drive the wafer 11 to make a uniform fluctuation motion at the fixed oblique angle. In this way, the copper atom layer can be better and more uniformly deposited on the sidewall around the entire through hole of the wafer 11, so that the copper atoms are uniformly deposited.
[0048] In one embodiment, as shown in Figure 2 , the process chamber further includes a guide rail 31, a first gear 32 and a second gear 33.
[0049] As shown in Figure 2 , the guide rail 31 is located at the bottom B2 of the hollow support column 22, and the first motor 26 is located on the guide rail 31, and the first motor 26 can move along the guide rail 31. The guide rail 31 can be a linear guide rail. In the embodiment, the guide rail 31 can include a second motor (not shown), which is used to drive the first motor 26 to move along the guide rail 31.
[0050] As shown in Figure 2 , the first gear 32 is located at the bottom end D of the connecting rod 25 and is fixedly connected with the bottom end D of the connecting rod 25.
[0051] As shown in Figure 2 , the first motor 26 includes a rotating shaft 261, the rotating shaft 261 is located on the side of the first motor 26 away from the guide rail 31, the extension direction of the rotating shaft 261 is parallel to the sidewall W2 of the hollow support column 22, the second gear 33 is located at one end of the rotating shaft 261 close to the base 23, and the second gear 33 is fixedly connected with the rotating shaft 261.
[0052] When the copper seed layer is not needed to be deposited in the through hole of the wafer 11, the first motor 26 is parked at the sidewall W2 of the hollow support column 22 (initial position), and the first gear 32 is separated from the second gear 33.
[0053] When it is needed to deposit copper seed layer in the through hole of wafer 11, the second motor drives the first motor 26 to move along the guide rail 31 to the middle axis position of the connecting rod 25, at this time the position of the first gear 32 is occupied by the second gear 33, and the first gear 32 and the second gear 33 will be engaged together, the connecting rod 25 is inclined at a certain angle, because the base 23 is connected with the connecting rod 25 through the hemisphere 24, so the base 23 and the wafer 11 can be driven to be inclined, when the first motor 26 rotates, the first motor 26 drives the base 23 to make fluctuation motion at a specified inclination angle through the rotating shaft 261. The first motor 26 can also drive the base 23 to make uniform fluctuation motion at a specified inclination angle through the rotating shaft 261.
[0054] Because the base 23 is connected with the connecting rod 25 through the hemisphere 24, the part of the hemisphere surface of the hemisphere 24 is located in the semispherical groove G, and the hemisphere surface of the hemisphere 24 is complementary to the inner surface of the semispherical groove G, which can make the base 23 swing up and down, and at the same time ensure the stability of the connection between the base 23 and the hollow pillar 22, and no left and right direction motion is generated.
[0055] In an embodiment, as shown in Figure 2 The process chamber can further include N springs 34, N being an integer greater than 2, for example, N being 3, 4, 5, 6 or other integers.
[0056] For each spring 34, one end of the spring 34 is fixedly connected with the connecting rod 25, and the other end is fixedly connected with the inner wall (inner side wall) of the hollow pillar 22. The connecting point of the spring 34 and the connecting rod 25 can be located at any position between the top end T2 and the bottom end D of the connecting rod 25. The N springs 34 are located in the same plane, which is parallel to the lower surface F3 of the base 23, and the included angle between adjacent two springs 34 is 360° / N. The N springs 34 are uniformly distributed in the same horizontal plane, which can balance the force in each direction of the connecting rod 25.
[0057] As shown in Figure 3 When it is needed to deposit copper seed layer in the through hole of wafer 11, the second motor drives the first motor 26 to move along the guide rail 31 to the middle axis position of the connecting rod 25, at this time the position of the first gear 32 is occupied by the second gear 33, and the first gear 32 and the second gear 33 will be engaged together, the connecting rod 25 is inclined at a certain angle, because the base 23 is connected with the connecting rod 25 through the hemisphere 24, so the base 23 and the wafer 11 can be driven to be inclined, when the first motor 26 rotates, the first motor 26 drives the base 23 to make fluctuation motion at a specified inclination angle through the rotating shaft 261. The first motor 26 can also drive the base 23 to make uniform fluctuation motion at a specified inclination angle through the rotating shaft 261.
[0058] Furthermore, since the connecting rod 25 is fixed by N springs, it and the base 23 will not rotate on their own. Instead, they will rotate around the second gear 33 of the first motor 26, thus achieving a uniform oscillation of the wafer 11 during the deposition process. The tilt angle of the wafer 11 is mainly determined by the radii of the second gear 33 on the first motor 26 and the first gear 32 on the connecting rod 25. The oscillation frequency is determined by the rotational speed of the first motor 26. When the deposition process ends and is reset, the first motor 26 returns to its initial position under the drive of the guide rail 31, and the connecting rod 25 returns to a horizontal state under the action of the spring 34 and its own gravity.
[0059] Preferably, the connection point between the spring 34 and the connecting rod 25 is located at the center between the top end T2 and the bottom end D of the connecting rod 25. This provides a better effect in fixing the connecting rod 25.
[0060] Preferably, N is 3. When the process chamber includes three springs 34, the included angle between any two adjacent springs 34 is 120°. When the process chamber includes three springs 34, it can both fix the connecting rod 25 and prevent the connecting rod 25 and the base 23 from rotating on their own, and save springs and reduce costs.
[0061] like Figure 4 As shown, the tilt angle of wafer 11 The angle is:
[0062]
[0063]
[0064]
[0065] in, The radius of the first gear 32, The radius of the second gear 33 is... Let O1 be the distance between the center O1 of the first gear 32 and the center O3 of the hemisphere. The distance between the center O2 of the second gear 33 and the center O3 of the hemisphere is denoted as O3.
[0066] In one embodiment, such as Figure 5 As shown, the tilt angle of wafer 11 The following relationship must be satisfied:
[0067]
[0068] Where a is the depth of the via 12 on wafer 11, and b is the width of the via 12.
[0069] In one embodiment, the process chamber can further include a plurality of balls between the inner surface of the hemispherical groove G and the hemispherical surface of the hemispherical body 24, so that when the motor 26 drives the base 23 to move in a wave motion at a specified inclination angle, the inner surface of the hemispherical groove G and the hemispherical surface of the hemispherical body 24 are in rolling friction, which can reduce the friction on the inner surface of the hemispherical groove G and the hemispherical surface of the hemispherical body 24, so that the motor can drive the hemispherical body to move in a wave motion at a specified inclination angle with less power, thereby saving energy and reducing costs, and also reducing the wear of the hemispherical groove G and the hemispherical body 24, thereby prolonging the service life of the hemispherical groove G and the hemispherical body 24.
[0070] In one embodiment, the balls can be steel balls, which are not easy to wear and have good durability.
[0071] In the embodiments of the present application, the base for carrying the wafer is fixedly connected with the hemispherical body, and the hemispherical body is placed in the hemispherical groove of the hollow support column, and the motor drives the base to move in a wave motion at a specified inclination angle, thereby driving the wafer to move in a wave motion at a specified inclination angle, so that when the process chamber is used to deposit a copper seed layer in the through hole of the wafer, the copper atoms falling will no longer be parallel to the sidewall of the through hole, and can easily be deposited at the sidewall position of the through hole, and the contact force between the copper atoms and the sidewall of the through hole also increases, so that the adhesion of the copper atoms is better, thereby improving the coverage and deposition quality of the copper seed layer in the through hole of the wafer, effectively inhibiting the generation of subsequent copper defects, effectively improving the electrical performance of the product, and improving the yield of the product.
[0072] Another embodiment of the present application provides a process chamber. In the above-mentioned embodiments, the first motor can move along the guide rail, and in the present embodiment, the guide rail can move together with the first motor.
[0073] In the present embodiment, the first motor 26 can be fixed on the guide rail 31. The process chamber can further include a third motor (not shown), which can be located in the hollow support column 22 and at the bottom B2 of the hollow support column 22, and the third motor can be used to drive the guide rail 31 to move.
[0074] When it is not necessary to deposit a copper seed layer in the through hole of the wafer 11, the first motor 26 is parked at the sidewall W2 of the hollow support column 22, and the first gear 32 is separated from the second gear 33.
[0075] When it is needed to deposit copper seed layer in the through hole of wafer 11, third motor drives guide rail 31 to move, so that first motor 26 moves with guide rail 31 to the middle axis position of connecting rod 25, first gear 32 meshes with second gear 33, and first motor 26 drives base 23 to do fluctuation motion at a specified inclination angle by rotating rotating shaft 261. First motor 26 can also drive base 23 to do uniform fluctuation motion at a specified inclination angle by rotating rotating shaft 261.
[0076] In the embodiment, first motor 26 can be fixed on guide rail 31, and by driving guide rail 31 to move by third motor, first motor 26 can be moved with guide rail 31 to the middle axis position of connecting rod 25.
[0077] The process chamber in the embodiment of the application is introduced above. As shown in Figure 6 In the related art, base 23 and support 61 are fixedly connected. Compared with the process chamber in the related art, in the embodiment of the application, base and hollow support are movably connected through hemisphere, and the hemisphere can be driven by motor to drive base to do fluctuation motion at a specified inclination angle, so that wafer can be driven to do fluctuation motion at a specified inclination angle. Thus, when the process chamber is used to deposit copper seed layer in the through hole of wafer, the copper atoms falling will not be parallel to the sidewall of the through hole, and can be easily deposited on the sidewall of the through hole. The contact force between copper atoms and the sidewall of the through hole is also increased, so that the adhesion of copper atoms is better, and the coverage and deposition quality of copper seed layer in the through hole of wafer are improved, the generation of subsequent copper defects is effectively inhibited, the electrical performance of product is effectively improved, and the yield of product is improved.
[0078] Another exemplary embodiment of the application further provides a semiconductor process equipment comprising the process chamber of any of the above embodiments.
[0079] In the application, the terms "first", "second" are only used for description purpose, and cannot be understood as indicating or implying relative importance. The term "multiple" means two or more than two, unless otherwise explicitly limited.
[0080] The above description of the embodiments is for the purpose of enabling a person of ordinary skill in the art to understand and apply the application. Those skilled in the art can easily make various modifications to the embodiments, and apply the general principles described herein to other embodiments without creative labor. Therefore, the application is not limited to the embodiments, and the improvements and modifications made by those skilled in the art based on the disclosure of the application without departing from the scope and spirit of the application are within the scope of the application.
Claims
1. A process chamber, characterized in that, The process chamber comprises: a cavity, a hollow pillar, a base, a hemisphere, a connecting rod and a first motor; one end of the hollow pillar is located at the bottom of the cavity, and the other end is provided with a semispherical groove, the bottom of the semispherical groove is provided with a through hole; the hemisphere is located in the semispherical groove, the upper surface of the hemisphere is a plane, the upper surface is fixedly connected with the lower surface of the base, the base is used for carrying a wafer, the semispherical surface of the hemisphere is located in the semispherical groove, and the semispherical surface of the hemisphere is complementary to the inner surface of the semispherical groove; when the upper surface is perpendicular to the side wall of the hollow pillar, the upper surface protrudes from the semispherical groove; the top end of the connecting rod is fixedly connected with the vertex of the semispherical surface of the hemisphere through the through hole; the first motor is located in the hollow pillar and at the bottom of the hollow pillar, and the first motor is used for driving the base to make a fluctuation motion at a specified inclination angle by acting on the bottom end of the connecting rod.
2. The process chamber of claim 1, wherein, Further comprising a guide rail, a first gear and a second gear; the guide rail is located at the bottom of the hollow pillar, the first motor is located on the guide rail, the first motor can move along the guide rail, or the guide rail can move together with the first motor; the first gear is located at the bottom end of the connecting rod and is fixedly connected with the bottom end of the connecting rod; the first motor comprises a rotating shaft, the rotating shaft is located on the side of the first motor away from the guide rail, the extension direction of the rotating shaft is parallel to the side wall of the hollow pillar, the second gear is located at the end of the rotating shaft close to the base, and the second gear is fixedly connected with the rotating shaft; when the first motor moves to the central axis position of the connecting rod, the connecting rod is inclined, the first gear is engaged with the second gear, and the first motor drives the base to make a fluctuation motion at a specified inclination angle by rotating the rotating shaft.
3. The process chamber of claim 2, wherein, When the first motor can move along the guide rail, the guide rail comprises a second motor, and the second motor is used for driving the first motor to move along the guide rail.
4. The process chamber of claim 2, wherein, When the guide rail can move together with the first motor, the first motor is fixed on the guide rail, and the process chamber further comprises a third motor, the third motor is located in the hollow pillar and at the bottom of the hollow pillar, and the third motor is used for driving the guide rail to move.
5. The process chamber of claim 2, wherein, Further comprising N springs, N is an integer greater than 2; for each spring, one end of the spring is fixedly connected with the connecting rod, and the other end is fixedly connected with the inner wall of the hollow pillar; the connection point of the spring and the connecting rod is located at any position between the top end and the bottom end of the connecting rod; the N springs are located in the same plane, the plane is parallel to the lower surface of the base, and the included angle between adjacent two springs is 360° / N.
6. The process chamber of claim 5, wherein, The connection point of the spring and the connecting rod is located at the central position between the top end and the bottom end of the connecting rod.
7. The process chamber of claim 5, wherein, N is 3.
8. The process chamber of claim 2, wherein, the angle of inclination the angle of inclination ； ； ； wherein is the radius of the first gear, is the radius of the second gear, is the distance of the center of the first gear from the center of the sphere, is the distance of the center of the second gear from the center of the sphere.
9. The process chamber of claim 1, wherein, Further comprising a plurality of balls, and the plurality of balls are located between the inner surface of the semispherical groove and the semispherical surface of the hemisphere.
10. A semiconductor process apparatus characterized by comprising: The process chamber comprises any one of claims 1 to 9.