Conductive glass structure with shading layer

Abstract

The utility model relates to a conductive glass structure with a shading layer, which comprises a glass substrate, an insulating layer, the shading layer and a conductive layer are sequentially arranged on the glass substrate, one side, facing the conductive layer, of the shading layer is etched to form a gap, and a filling layer is arranged between the shading layer and the conductive layer; one side, facing the shading layer, of the filling layer is filled in the gap of the shading layer; and one side, facing the conductive layer, of the filling layer is a flat connecting surface. The conductive layer in the conductive glass structure with the shading layer prepared by the process does not form a recess due to an etched pattern on the light layer, and the conductive layer can be directly arranged on the flat connecting surface of the filling layer, so that the condition of poor display caused by breakage of an orientation layer when the orientation layer is manufactured in a subsequent LCD (Liquid Crystal Display) manufacturing process is effectively avoided, and the display quality is improved. And the yield of the conductive glass is greatly improved.

Description

TECHNICAL FIELD

[0001] The utility model relates to conductive glass technical field, more specifically, it relates to a conductive glass structure with light shielding layer. BACKGROUND

[0002] Ordinary glass is insulating material, through plating a layer of conductive film (ITO film) on its surface, it can have conductive performance. This is conductive glass.

[0003] The processing mode of the existing conductive glass with light shielding layer mainly has two kinds. Method one, single side polishing glass is plated in succession on the polishing surface by magnetron sputtering technology, and the insulating layer film (transparent), light shielding layer film (the required pattern etching), conductive layer film (transparent) are plated. Method two, single side polishing glass is plated in succession on the polishing surface by magnetron sputtering technology, and the light shielding layer film (the required pattern etching), insulating layer film (transparent), conductive layer film (transparent) are plated. When method one is prepared, the conductive film will break at the pattern etched by the light shielding layer film, and the display cannot be carried out at the pattern. Because the upper and lower two film layers are metal film layers, the insulating layer film (transparent) is broken down when the conductive film is prepared due to the influence of discharge and other factors, and thus the film is defective.

[0004] Therefore, how to improve the structure of conductive glass to improve the quality of conductive glass is the technical problem to be solved by the application. CONTENT OF THE UTILITY MODEL

[0005] In view of the defects in the prior art, the utility model provides a conductive glass structure with light shielding layer technical scheme, which adds a filling layer on the existing conductive glass structure, so as to fill the pattern vacancy etched by the light shielding layer.

[0006] The technical scheme of the utility model is as follows:

[0007] A conductive glass structure with light shielding layer, comprising a glass substrate, an insulating layer, a light shielding layer and a conductive layer are sequentially arranged on the glass substrate, a vacancy is formed on the side of the light shielding layer facing the conductive layer by etching, and a filling layer is arranged between the light shielding layer and the conductive layer.

[0008] The side of the filling layer facing the light shielding layer is filled in the vacancy of the light shielding layer.

[0009] The side of the filling layer facing the conductive layer is a flat connecting surface.

[0010] In summary, the above technical solution has the following beneficial effects: the conductive layer in the conductive glass structure with a light-shielding layer prepared by the above process will not form a depression due to the etching pattern on the light layer. The conductive layer can be directly set on the flat connection surface of the filling layer, thereby effectively avoiding the situation of alignment layer breakage and display defects caused by the subsequent LCD manufacturing process, and greatly improving the yield of conductive glass. Attached Figure Description

[0011] Figure 1 The schematic diagram in step three shows a conductive glass structure with a light-shielding layer, wherein the filling layer is silicon dioxide.

[0012] Figure 2 A schematic diagram of a conductive glass structure with a light-shielding layer, wherein the filling layer is silicon dioxide;

[0013] Figure 3 This is a schematic diagram of an embodiment of a conductive glass structure with a light-shielding layer.

[0014] Figure 4 This is a schematic diagram of a second embodiment of a conductive glass structure with a light-shielding layer.

[0015] Reference numerals: 10, glass substrate; 20, insulating layer; 30, light-shielding layer; 31, void; 32, highest point; 40, filling layer; 41, connecting surface; 50, conductive layer. Detailed Implementation

[0016] The present invention will be further described in detail below with reference to the accompanying drawings and embodiments. Identical components are indicated by the same reference numerals. It should be noted that the terms "front," "rear," "left," "right," "upper," and "lower" used in the following description refer to directions in the accompanying drawings, and the terms "bottom surface," "top surface," "inner," and "outer" refer to directions toward or away from the geometric center of a specific component, respectively.

[0017] like Figures 1-3 As shown, a conductive glass structure with a light-shielding layer includes a glass substrate 10. An insulating layer 20, a light-shielding layer 30, and a conductive layer are sequentially disposed on the glass substrate 10. A gap 31 is formed by etching on the side of the light-shielding layer 30 facing the conductive layer. A filling layer 40 is disposed between the light-shielding layer 30 and the conductive layer. The side of the filling layer 40 facing the light-shielding layer 30 fills the gap 31 of the light-shielding layer 30. The side of the filling layer 40 facing the conductive layer is a flat connecting surface 41.

[0018] Specifically, the glass substrate 10 is single-sided polished glass or other glass substrate 10. The conductive glass structure with light-shielding layer 30 of this application is prepared by the following process: Step 1: The single-sided polished glass is sputtered with an insulating layer 20 and a light-shielding layer 30 on the polished surface of the glass in sequence using magnetron sputtering technology, and the required pattern is etched on the light-shielding layer 30 using etching technology.

[0019] Step 2: Use etching technology to etch the desired pattern on the light-shielding layer 30. The pattern is the gap 31 on the light-shielding layer 30.

[0020] Step 3: As Figure 1 As shown, a filler layer 40 is coated on the surface of the etched light-shielding layer 30. The filler layer 40 is made of silicon dioxide or OC photoresist. When the filler layer 40 is made of silicon dioxide, silicon dioxide is sputtered on the side of the light-shielding layer 30 away from the insulating layer 20 by magnetron sputtering technology. The glass with sputtered silicon dioxide is placed in a polishing and grinding machine to grind the excess silicon dioxide flat.

[0021] When the filler layer 40 is OC photoresist, after coating a layer of OC photoresist on the surface of the light-shielding layer 30, an appropriate pressure is applied by a three-roll coater. Taking advantage of the flowability of the OC photoresist, the OC photoresist is filled into the etched pattern of the light-shielding layer 30, and finally a uniform and flat transparent film layer with a thickness of about 1.4 μm is formed on the surface of the light-shielding layer 30. The surface is then cured using a curing oven.

[0022] Step Four: As Figure 2 As shown, after the filler layer 40 is cured on the glass, the glass is placed in a polishing and grinding machine to grind the filler layer 40 to the desired thickness. This step can be omitted depending on the actual situation.

[0023] Step 5: As Figure 3 As shown, a conductive layer is sputtered on the surface of the filler layer 40 using magnetron sputtering technology.

[0024] The conductive layer in the conductive glass structure with light-shielding layer 30 prepared by the above process will not form a depression due to the etching pattern on the light layer. The conductive layer can be directly set on the flat connection surface 41 of the filling layer 40, thereby effectively avoiding the situation of alignment layer breakage and display defects caused by the subsequent LCD manufacturing process, and greatly improving the yield of conductive glass.

[0025] Example 1: As Figure 3As shown, the point of the light shielding layer 30 farthest from the insulating layer 20 is the highest point 32, and the connecting surface 41 of the filling layer 40 is at the same height as the highest point 32 of the light shielding layer 30. The etching gap 31 on the light shielding layer 30 is generally rectangular, but can also be other shapes. The highest point 32 of the light shielding layer 30 farthest from the insulating layer 20 can be a line or a surface formed by multiple points, or can be a single point. The filling layer 40 of this embodiment only fills the etching gap 31 of the light shielding layer 30, and the filling layer 40 that is higher than the highest point 32 needs to be polished so that the connecting surface 41 of the filling layer 40 is at the same height as the highest point 32 of the light shielding layer 30. This structure does not change the overall thickness of the conductive glass.

[0026] Embodiment Two: As shown in Figure 4 As shown, the point of the light shielding layer 30 farthest from the insulating layer 20 is the highest point 32, and the distance between the connecting surface 41 of the filling layer 40 and the highest point 32 of the light shielding layer 30 is between 1 μm and 2 μm. The filling layer 40 of this embodiment forms a thickness of 1 μm to 2 μm on the light shielding layer 30 after filling the etching gap 31 of the light shielding layer 30. Although this structure increases the overall thickness of the conductive glass, when the filling layer 40 is made of OC photoresist, it can be formed at one time and does not need to be polished additionally. In addition, it also avoids damage to the light shielding layer 30 caused by polishing.

[0027] The filling layer 40 is made of OC photoresist. The OC photoresist has fluidity, and after being filled in the etching gap 31 of the light shielding layer 30, a uniform and flat transparent film layer can be formed by a three-roll coating machine with appropriate pressure. In the case where the thickness meets the requirements, it can directly enter the next step, or it can be further polished and then used.

[0028] The filling layer 40 is made of silicon dioxide. After sputtering, the uneven surface of the silicon dioxide needs to be further polished by a polishing grinder. The polishing thickness can be the thickness in Embodiment One or the thickness in Embodiment Two.

[0029] The insulating layer 20 is made of silicon dioxide. Any material that can be used as the insulating layer 20 in the prior art is within the protection scope of the present application.

[0030] The light shielding layer 30 is made of chromium oxide, or a mixed material of chromium and chromium oxide, or a mixed material of aluminum and chromium nitride, or a mixed material of aluminum and chromium oxide. Any material that can be used as the light shielding layer 30 in the prior art is within the protection scope of the present application.

[0031] The conductive layer is made of indium tin oxide or aluminum-doped zinc oxide. Of course, the conductive layer can also be other materials such as ITO (indium tin oxide), AZO (aluminum-doped zinc oxide), tin oxide, indium tin oxide (ITO), etc. Any material that can be used as the conductive layer in the prior art is within the protection scope of the present application.

[0032] The above are only preferred embodiments of the present application, and the protection scope of the present application is not limited to the above-mentioned embodiments. Any technical solution falling within the concept of the present application shall fall within the protection scope of the present application. It should be noted that, for ordinary skilled persons in the art, some improvements and refinements without departing from the principles of the present application shall also be considered as falling within the protection scope of the present application.

Claims

1. A conductive glass structure with a shading layer, comprising a glass substrate (10), an insulating layer (20), a shading layer (30) and a conductive layer are sequentially arranged on the glass substrate (10), a vacancy (31) is formed on the side of the shading layer (30) facing the conductive layer by etching, characterized in that, the shading layer (30) is made of a material with a refractive index lower than that of the glass substrate (10) and the conductive layer, and the vacancy (31) is filled with a material with a refractive index lower than that of the shading layer (30) and the conductive layer. A filling layer (40) is arranged between the light-shielding layer (30) and the conductive layer; The side of the filling layer (40) facing the light-shielding layer (30) is filled in the vacancy (31) of the light-shielding layer (30); The side of the filling layer (40) facing the conductive layer is a flat connecting surface (41).

2. The conductive glass structure with a light shielding layer according to claim 1, wherein, The highest point (32) of the light-shielding layer (30) is farthest from the insulating layer (20), and the connecting surface (41) of the filling layer (40) is at the same height as the highest point (32) of the light-shielding layer (30).

3. The conductive glass structure with a light shielding layer according to claim 1, wherein, The highest point (32) of the light-shielding layer (30) is farthest from the insulating layer (20), and the distance between the connecting surface (41) of the filling layer (40) and the highest point (32) of the light-shielding layer (30) is between 1 μm and 2 μm.

4. The conductive glass structure with a light shielding layer according to any one of claims 1-3, characterized in that, The filling layer (40) is made of OC photoresist material.

5. The conductive glass structure with a light shielding layer according to any one of claims 1-3, wherein the conductive glass structure is a low-e glass structure. The filling layer (40) is made of silicon dioxide.

6. The conductive glass structure with a light shielding layer according to any one of claims 1-3, wherein, The insulating layer (20) is made of silicon dioxide.

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