Silicon wafer bearing device

Abstract

The utility model relates to a silicon wafer bearing device which comprises a base and a first limiting piece, and the base is provided with a bearing face in the first direction. The first limiting piece is connected with the edge of the bearing face in a protruding mode in the first direction, and a first limiting cavity is defined. The first limiting piece comprises an arc-shaped face, and the arc-shaped face defines a first limiting cavity and forms an opening structure. In the embodiment of the invention, the silicon wafer bearing device can stably bear and limit the silicon wafer so as to ensure the position stability of the silicon wafer in the transfer process.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor production equipment, and particularly relates to a silicon wafer bearing device. BACKGROUND

[0002] A silicon wafer is a thin sheet or sheet-shaped substrate made of high-purity silicon material, which is a direct downstream product of polycrystalline silicon. The silicon wafer can be divided into two categories: photovoltaic silicon wafers and semiconductor silicon wafers. The semiconductor silicon wafer is used to manufacture semiconductor devices such as integrated circuits and transistors. The semiconductor silicon wafer is usually made of electronic-grade polycrystalline silicon as raw material, and becomes a single crystal silicon wafer after processes such as crystal pulling and slicing, and is further processed into a wafer, which is a basic material for integrated circuits, transistors and other semiconductor devices.

[0003] In the related production process of semiconductor devices, the semiconductor silicon wafer needs to be transferred for many times, and in the transfer process, there is a risk of silicon wafer falling. CONTENT OF THE INVENTION

[0004] The silicon wafer bearing device provided by the embodiment of the present application can form stable bearing and limiting for the silicon wafer, so as to ensure the position stability of the silicon wafer in the transfer process.

[0005] The embodiment of the present application provides a silicon wafer bearing device, which comprises:

[0006] A base, wherein the base has a bearing surface in a first direction;

[0007] A first limiting piece, wherein the first limiting piece is connected to the edge of the bearing surface in the first direction and encloses a first limiting cavity;

[0008] The first limiting piece comprises an arc-shaped surface, the arc-shaped surface encloses the first limiting cavity, and the arc-shaped surface is provided with an opening structure penetrating through.

[0009] In some embodiments, the opening structure penetrates through the arc-shaped surface along one side of a second direction, and the second direction intersects the first direction.

[0010] The base comprises a bottom surface opposite to the bearing surface in the first direction, and in a direction parallel to the second direction and pointing from the first limiting cavity to the opening structure, the distance between the bottom surface and the bearing surface in the first direction gradually increases.

[0011] In some embodiments, the linear extension direction of the arc-shaped surface is perpendicular to the bearing surface.

[0012] In some embodiments, the base protruding the bearing surface is provided with a protrusion, the protrusion is located inside the first limiting cavity and connected with the sidewall of the first limiting cavity, and a side surface of the protrusion away from the base is arranged in parallel with the bearing surface.

[0013] In the first direction, the side surface of the protrusion away from the base at least partially protrudes the base.

[0014] In some embodiments, the opening structure forms a central angle between 180 degrees and 240 degrees in the first direction.

[0015] And / or, the acute angle between the bearing surface and the bottom surface is between 20 degrees and 40 degrees.

[0016] In some embodiments, the inner diameter of the first limiting cavity gradually increases away from the side of the base along the first direction.

[0017] In some embodiments, the sidewall of the first limiting cavity is provided with a plurality of limiting edges, and the plurality of limiting edges are arranged in intervals along the first direction and extend along the first direction.

[0018] In some embodiments, the first limiting member is fixedly connected with the base, and the first limiting member is integrally formed with the base.

[0019] In some embodiments, the first limiting member is slidingly connected with the base in the first direction.

[0020] The bearing device has a first state and a second state, in the first state, the first limiting member is arranged in intervals with the base in the first direction, and in the second state, the first limiting member is arranged in abutment with the base in the first direction.

[0021] In some embodiments, the base protruding the bearing surface is provided with a protrusion, a projection of the protrusion in the first direction is inside a projection of the inner sidewall of the first limiting member in the first direction.

[0022] In the second state, the protrusion is arranged in intervals with the inner sidewall of the first limiting cavity.

[0023] The silicon wafer carrying device according to the present application carries and limits the position of the silicon wafer. The silicon wafer carrying device comprises a base for carrying the silicon wafer and a first limiting member for limiting the relative position relationship between the silicon wafer and the base. The base has a carrying surface in the first direction, and the silicon wafer contacts the carrying surface when the silicon wafer is on the base. The first limiting member is arranged on the side of the silicon wafer to limit the relative position of the silicon wafer on the base. Meanwhile, the first limiting member comprises an arc-shaped surface adapted to the silicon wafer, and the arc-shaped surface encloses a first limiting cavity, that is, the cavity side wall of the first limiting cavity is at least partially arc-shaped. The arc-shaped surface is arranged in a circular arc direction around the first direction, and the straight line direction of the arc-shaped surface extends away from the base. The arrangement of the arc-shaped surface can improve the limiting effect on the silicon wafer. Meanwhile, the arc-shaped surface forms a certain closed area in the circular arc surrounding direction, which can protect the silicon wafer and reduce the influence of external objects on the silicon wafer. BRIEF DESCRIPTION OF DRAWINGS

[0024] The features, advantages, and technical effects of the exemplary embodiments of the present application will be described below with reference to the accompanying drawings.

[0025] Fig. 1 A first structural schematic diagram of a silicon wafer carrying device provided for some embodiments of the present application;

[0026] Fig. 2 A second structural schematic diagram of a silicon wafer carrying device provided for some embodiments of the present application;

[0027] Fig. 3 A first structural schematic diagram of another silicon wafer carrying device provided for some embodiments of the present application;

[0028] Fig. 4 A second structural schematic diagram of another silicon wafer carrying device provided for some embodiments of the present application;

[0029] Fig. 5 A partial cross-sectional structural schematic diagram of another silicon wafer carrying device provided for some embodiments of the present application.

[0030] Label Description:

[0031] 10, base; 11, carrying surface; 12, bottom surface;

[0032] 20, first limiting member; 21, first limiting cavity; 22, arc-shaped surface; 23, opening structure; 231, first opening; 232, second opening; 24, limiting edge;

[0033] 30, protruding part;

[0034] 40, second limiting member; 41, second limiting cavity;

[0035] X, first direction; Y, second direction.

[0036] In the drawings, like reference numerals refer to like elements throughout. The drawings are not necessarily to scale, emphasis instead being placed upon illustrating the principles of the application. DETAILED DESCRIPTION

[0037] In order to make the purposes, technical solutions, and advantages of the present application clearer, further understandings of the present application will be given with the description of specific embodiments and with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are intended to explain, and not to limit, the present application. The present application can be implemented without some of the specific details. The following description of the embodiments is merely provided to give a better understanding of the present application by showing examples of the present application.

[0038] It should be noted that, in this document, the terms such as “first” and “second” are merely used to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Also, the terms “include”, “contain” or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements not only includes those elements, but also includes other elements not explicitly listed or inherent to such a process, method, article or device. Without more limitations, the elements defined by the statement “include” do not exclude the presence of other identical elements in the process, method, article or device including the elements.

[0039] A silicon wafer is a thin or sheet-shaped substrate made of high-purity silicon material, which is a direct downstream product of polycrystalline silicon. Silicon wafers can be divided into two categories: photovoltaic silicon wafers and semiconductor silicon wafers. Semiconductor silicon wafers are used to manufacture semiconductor devices such as integrated circuits and transistors. Semiconductor silicon wafers are usually made of electronic-grade polycrystalline silicon as raw material, and after processes such as crystal pulling and slicing, they become single crystal silicon wafers, which are further processed into wafers and are the basic materials for integrated circuits, transistors and other semiconductor devices.

[0040] In the related production process of semiconductor devices, semiconductor silicon wafers need to be transferred multiple times, and in the transfer process, there is a risk of silicon wafer falling.

[0041] In actual operation, considering the production cost, technicians generally use plastic bags to package silicon wafers for transfer. After the plastic bag packaging is opened, it is difficult to effectively limit the silicon wafers. The transfer of silicon wafers needs to be transferred one by one, and usually needs to be continued for a long time. The silicon wafers in the opened plastic bag packaging are easy to slide onto the operation table, causing the risk of scratching the surface of the silicon wafers or causing fragments.

[0042] In view of this, in a first aspect, referring to Figs. 1-2 The silicon wafer carrying device provided by the embodiment of the present application comprises a base 10 and a first limiting piece 20. The base 10 has a carrying surface 11 in a first direction X. The first limiting piece 20 protrudes from the edge of the carrying surface 11 in the first direction X and encloses a first limiting cavity 21. The first limiting piece 20 comprises an arc-shaped surface 22 which encloses the first limiting cavity 21 and is provided with an opening structure 23.

[0043] The silicon wafer carrying device provided by the embodiment of the present application can be applied to the process of transferring the silicon wafer in the production process of the silicon wafer. Exemplarily, the silicon wafer is initially packaged and carried by a plastic package. When the silicon wafer needs to be transferred to other structures, the time in the transferring process is relatively long. When the plastic package is opened, the silicon wafer lacks limiting. The silicon wafer can be transferred to the silicon wafer carrying device provided by the embodiment of the present application for carrying in a relatively short time, and then the silicon wafer is transferred to the required structure.

[0044] In actual application, the silicon wafer carrying device is a transfer transfer in the production process of the silicon wafer. The technician first transfers the silicon wafer to the silicon wafer carrying device provided by the embodiment of the present application in a relatively short and concentrated time. After the silicon wafer carrying device stably and reliably carries the silicon wafer, the technician transfers the silicon wafer to the required structure in a relatively long and intermittent time.

[0045] Specifically, the silicon wafer carrying device comprises a base 10 for carrying the silicon wafer and a first limiting piece 20 for limiting the relative position relationship between the silicon wafer and the base 10. The base 10 has a carrying surface 11 in a first direction X. When the silicon wafer is on the base 10, the silicon wafer contacts the carrying surface 11. The first limiting piece 20 is arranged on the periphery of the silicon wafer to limit the relative position of the silicon wafer on the base 10. It should be pointed out that the first limiting piece 20 forms at least three-point contact on the periphery of the silicon wafer to stably limit the silicon wafer.

[0046] In order to reduce the pollution and damage of the base 10 to the silicon wafer, the base 10 is provided with a carrying layer, and the carrying surface 11 is formed by the carrying layer. The carrying layer is made of polytetrafluoroethylene material. Alternatively, the base 10 is made of polytetrafluoroethylene material as a whole.

[0047] The first limiting piece 20 protrudes from the carrying surface 11 in the first direction X and encloses the first limiting cavity 21. The size of the first limiting cavity 21 corresponds to the size of the silicon wafer. At the same time, the first limiting piece 20 is arranged at the edge position of the carrying surface 11 to form the first limiting cavity 21 in the middle region of the base 10, so as to reduce the probability of the silicon wafer falling off.

[0048] The distance of the first limiting member 20 protruding from the bearing surface 11 in the first direction X, that is, the extending size of the first limiting cavity 21 in the first direction X, should be greater than the size of the silicon wafer in the first direction X. When a plurality of silicon wafers are placed on the base 10, the plurality of silicon wafers are placed in sequence in the first direction X, and the extending size of the first limiting cavity 21 in the first direction X should be greater than the total size of the plurality of silicon wafers in the first direction X.

[0049] In order to adapt to the circular shape of the silicon wafer, the first limiting member 20 comprises an arc surface 22, which encloses the first limiting cavity 21, that is, at least part of the cavity side wall of the first limiting cavity 21 is an arc side wall. The circular arc direction of the arc surface 22 surrounds the first direction X, and the straight line direction of the arc surface 22 extends away from the side of the base 10. The arrangement of the arc surface 22 can adapt to the shape of the silicon wafer to improve the limiting effect on the silicon wafer. At the same time, the arc surface 22 forms a certain closed area in the circular arc surrounding direction, which can produce a certain protection effect on the silicon wafer, reducing the influence of objects outside the first limiting cavity 21 on the silicon wafer.

[0050] In order to facilitate the placement and removal of the silicon wafer, the arc surface 22 forms an opening structure 23 while enclosing the first limiting cavity 21, and the technician can use the silicon wafer transfer device to place and remove the silicon wafer at the opening structure 23. The size of the opening structure 23 should allow the silicon wafer to pass through smoothly. Alternatively, the opening structure 23 is arranged opposite to the bearing surface 11 in the first direction X, and the silicon wafer is placed into or removed from the first limiting cavity 21 in the first direction X.

[0051] In summary, in the embodiment of the present application, the silicon wafer bearing device bears and limits the silicon wafer. The silicon wafer bearing device comprises a base 10 for bearing the silicon wafer and a first limiting member 20 for limiting the relative position relationship between the silicon wafer and the base 10. The base 10 has a bearing surface 11 in the first direction X, and the silicon wafer contacts the bearing surface 11 when the silicon wafer is on the base 10. The first limiting member 20 is arranged on the side of the silicon wafer to limit the relative position of the silicon wafer on the base 10. At the same time, the first limiting member 20 comprises an arc surface 22 adapted to the silicon wafer, which encloses the first limiting cavity 21, that is, at least part of the cavity side wall of the first limiting cavity 21 is an arc side wall. The circular arc direction of the arc surface 22 surrounds the first direction X, and the straight line direction of the arc surface 22 extends away from the side of the base 10. The arrangement of the arc surface 22 can improve the limiting effect on the silicon wafer. At the same time, the arc surface 22 forms a certain closed area in the circular arc surrounding direction, which can produce a certain protection effect on the silicon wafer, reducing the influence of objects outside the first limiting cavity 21 on the silicon wafer.

[0052] In some embodiments, the opening structure 23 penetrates the arc surface 22 along one side of the second direction Y intersecting the first direction X. In the embodiments of the present application, the first direction X can be set as the vertical direction, and the second direction Y can be any direction in the horizontal plane.

[0053] For the setting mode of the opening structure 23, there are several setting modes under the premise that the silicon wafer can be put into or removed from the first limiting cavity 21.

[0054] In one embodiment, the opening structure 23 includes a first opening 231 and a second opening 232. The first opening 231 communicates the first limiting cavity 21 with the external environment along the first direction X, and the silicon wafer is put into or removed from the first limiting cavity 21 along the first direction X through the first opening 231. Meanwhile, the second opening 232 communicates the first limiting cavity 21 with the external environment along the second direction Y, and the second opening 232 penetrates the first limiting member 20 along the first direction X. The second opening 232 is used for a transfer device to transfer the silicon wafer. The transfer device sucks the silicon wafer in the first limiting cavity 21 through the space of the second opening 232 and transfers the silicon wafer out through the first opening 231. In this embodiment, there is no requirement for the central angle of the circle along the first direction X formed by the projection of the second opening 232 on the first direction X, and the size of the transfer device can be met.

[0055] In another embodiment, the opening structure 23 includes a second opening 232. The second opening 232 communicates the first limiting cavity 21 with the external environment along the second direction Y, and the projection of the second opening 232 on the first direction X forms a circle along the first direction X with a central angle greater than or equal to 180 degrees. The silicon wafer is put into or removed from the first limiting cavity 21 through the second opening 232. For the silicon wafer, the maximum size is the diameter. When the projection of the second opening 232 on the first direction X forms a circle along the first direction X with a central angle greater than or equal to 180 degrees, the maximum size of the silicon wafer is consistent with the size of the two ends of the second opening 232 when the silicon wafer is inside the first limiting cavity 21. The silicon wafer can be directly put into or removed from the first limiting cavity 21 through the second opening 232. In this embodiment, a first opening 231 can be set in the first direction X to facilitate observation of the inside of the first limiting cavity 21. No first opening 231 can be set in the first direction X to form a closed structure relative to the bearing surface 11 to provide certain protection for the silicon wafer in the first direction X.

[0056] When the central angle of the circle formed by the projection of the second opening 232 in the first direction X is greater than or equal to 180 degrees, in order to form reliable limiting for the silicon wafer to ensure the position of the silicon wafer on the base 10, the central angle of the circle formed by the projection of the second opening 232 in the first direction X is less than 240 degrees. Through the above setting, the first limiting part 20 forms at least one-third of the circumferential limiting for the silicon wafer in the circle in the first direction X, and at the same time, the silicon wafer can be conveniently put in and out of the first limiting cavity 21 directly from the second opening 232.

[0057] When the central angle of the circle formed by the projection of the second opening 232 in the first direction X is greater than or equal to 180 degrees, in order to avoid the silicon wafer from sliding off from the second opening 232, the bearing surface 11 is arranged to be inclined. Specifically, the base 10 includes a bottom surface 12 opposite to the bearing surface 11 in the first direction X, and the distance between the bottom surface 12 and the bearing surface 11 gradually increases in the direction parallel to the second direction Y and pointing to the opening structure 23 from the first limiting cavity 21.

[0058] The bearing surface 11 is arranged to be inclined compared to the bottom surface 12 with the bottom surface 12 as the horizontal reference. The height of the closed side of the first limiting cavity 21 is lower than the height of the opening side of the first limiting cavity 21. When the silicon wafer is in the first limiting cavity 21, the silicon wafer is carried by the bearing surface 11, and the silicon wafer is also arranged to be inclined. The bearing surface 11 generates a support force perpendicular to the bearing surface 11 for the silicon wafer. Due to the inclined arrangement of the bearing surface 11, the support force has a first component in the first direction X and a second component in the horizontal direction. Under the action of the second component, the silicon wafer will abut against the first limiting part 20, and the first limiting part 20 will assist in supporting the silicon wafer.

[0059] Without the action of external force, the silicon wafer approaches the first limiting part 20 and has a tendency to slide away from the side of the second opening 232. Based on the inclined arrangement of the bearing surface 11, the probability of the silicon wafer sliding off from the second opening 232 can be reduced.

[0060] In order to avoid excessive inclination of the bearing surface 11, in some embodiments, the acute angle between the bearing surface 11 and the bottom surface 12 is between 20 degrees and 40 degrees. Within the above angle range, the first component is greater than the second component, and the silicon wafer can be mainly supported by the bearing surface 11 to ensure stable support of the silicon wafer by the bearing surface 11. If the inclination angle of the bearing surface 11 is too large, the second component will be greater than the first component, the first limiting part 20 will generate a larger force for the silicon wafer from the circumferential side wall of the silicon wafer, and there will be a risk of damage to the silicon wafer by the first limiting part 20. Controlling the inclination angle of the bearing surface 11 within the above range can enable the bearing surface 11 to carry the silicon wafer from the circumferential bottom wall of the silicon wafer, and the area of the silicon wafer subjected to the support force is larger, so as to reduce the probability of damage to the silicon wafer.

[0061] In some embodiments, the linear extension direction of the arc surface 22 is arranged perpendicularly to the bearing surface 11. In order to ensure that the silicon wafer can be stably positioned inside the first limiting cavity 21, the linear extension direction of the arc surface 22 is arranged perpendicularly to the bearing surface 11, that is, there is an included angle between the linear extension direction of the arc surface 22 and the first direction X. When a plurality of silicon wafers are arranged in a stacked manner in the first limiting cavity 21, the thickness extension direction of the plurality of silicon wafers is consistent with the linear extension direction of the arc surface 22, so that each silicon wafer can be positioned inside the arc region formed by the first limiting member 20, thereby achieving good limiting of the silicon wafer.

[0062] If the linear extension direction of the arc surface 22 is arranged along the first direction X, when a plurality of silicon wafers are arranged in a stacked manner in the first limiting cavity 21, there is an included angle between the thickness extension direction of the plurality of silicon wafers and the linear extension direction of the arc surface 22, so that the silicon wafers with a certain height can be positioned outside the arc region formed by the first limiting member 20, thereby increasing the risk of falling.

[0063] In some embodiments, the bearing surface 11 protruding from the base 10 is provided with a protruding portion 30, the protruding portion 30 is located inside the first limiting cavity 21 and connected with the side wall of the first limiting cavity 21, and the side surface of the protruding portion 30 away from the base 10 is arranged in parallel with the bearing surface 11. In the first direction X, the side surface of the protruding portion 30 away from the base 10 at least partially protrudes from the base 10.

[0064] After the protruding portion 30 is arranged, the silicon wafer is carried by the side of the protruding portion 30 away from the base 10. The arrangement of the protruding portion 30 enables the silicon wafer to have a certain support height when the silicon wafer is positioned inside the first limiting cavity 21. When the silicon wafer is put in and taken out, the transfer device does not need to be in contact with the base 10. By protruding the protruding portion 30 from the base 10, the contact between the transfer device and the base 10 can be further reduced when the silicon wafer is put in and taken out, thereby reducing the probability of interference between the transfer device and the base 10.

[0065] The arrangement of the protruding portion 30 enables the transfer device to directly place the silicon wafer on the protruding portion 30. Since the protruding portion 30 has a certain protruding distance relative to the base 10, the probability of contact between the transfer device and the base 10 is reduced, thereby reducing the risk of falling when the silicon wafer is put into the first limiting cavity 21.

[0066] In some embodiments, the inner diameter of the first limiting cavity 21 gradually increases away from the base 10 in the first direction X.

[0067] When the silicon wafer is actually taken out from the first limiting cavity 21, the technician will inevitably lift the silicon wafer by a certain distance and then take it out from the opening structure 23. In the process of lifting the silicon wafer, in order to avoid unnecessary damage to the circumferential side wall of the silicon wafer by the first limiting part 20, the inner diameter of the first limiting cavity 21 is gradually increased in the direction away from the base 10 along the first direction X, so as to reduce the probability of contact between the circumferential side wall of the silicon wafer and the side wall of the first limiting cavity 21 in the lifting process. However, in order to take into account the limiting effect of the first limiting cavity 21, the inner diameter of the first limiting cavity 21 is increased by no more than 20% of the diameter of the silicon wafer.

[0068] In some embodiments, the side wall of the first limiting cavity 21 is provided with a plurality of limiting edges 24, and the plurality of limiting edges 24 are arranged in a ring along the first direction X and extend along the first direction X.

[0069] After the limiting edges 24 are arranged, when the silicon wafer is in the first limiting cavity 21, the circumferential side wall of the silicon wafer is in contact with the limiting edges 24. The arrangement of the limiting edges 24 can reduce the contact area between the side wall of the first limiting cavity 21 and the silicon wafer, so as to reduce the probability of damage to the silicon wafer while limiting the silicon wafer.

[0070] The plurality of limiting edges 24 are arranged in a ring along the first direction X, which can form a plurality of contact positions in the circumferential direction of the silicon wafer, so as to improve the stability of the limiting of the silicon wafer. At the same time, the limiting edges 24 extend along the first direction X, which can contact and limit a plurality of silicon wafers at the same time, so as to make the relative positions of the plurality of silicon wafers consistent and reduce the probability of position deviation between the silicon wafers.

[0071] In some embodiments, the first limiting part 20 is fixedly connected with the base 10, and the first limiting part 20 is integrally formed with the base 10.

[0072] In order to improve the stability of the limiting of the silicon wafer by the first limiting part 20, the relative position stability between the first limiting part 20 and the base 10 is first ensured, and therefore the first limiting part 20 is fixedly connected with the base 10 to improve the relative position stability between the first limiting part 20 and the base 10, so as to ensure the stability of the limiting of the silicon wafer by the first limiting part 20.

[0073] In order to ensure the connection stability of the first limiting part 20 and the base 10, the first limiting part 20 and the base 10 can be directly formed by an integral forming method. The connection strength between the first limiting part 20 and the base 10 can be ensured by the forming method, so as to improve the connection stability between the first limiting part 20 and the base 10.

[0074] In some embodiments, please refer to Figs. 3-5The first limiting member 20 is in sliding connection with the base 10 in the first direction X. The carrier device has a first state and a second state. In the first state, the first limiting member 20 is spaced apart from the base 10 in the first direction X. In the second state, the first limiting member 20 is in abutment with the base 10 in the first direction X.

[0075] For example, the wafer carrier device is used to carry and limit the unpackaged wafer. In the first state, the first limiting member 20 is spaced apart from the base 10 in the first direction X, that is, the first limiting member 20 and the base 10 have a certain operation space, and the technician can use the operation space to contact the plastic packaging of the wafer, so that the plastic packaging only contacts the wafer at the bottom. In the process of changing from the first state to the second state, the first limiting member 20 slides towards the base 10, and at the same time, the plastic packaging is pressed against the base 10 to limit the wafer. Through the above arrangement, the wafer can be directly limited after contacting the packaging, so as to facilitate the subsequent transfer of the wafer.

[0076] In some embodiments, the convex carrying surface 11 of the base 10 is provided with a convex portion 30, and the projection of the convex portion 30 in the first direction X is inside the projection of the inner side wall of the first limiting cavity 21 in the first direction X. In the second state, the convex portion 30 is spaced apart from the inner side wall of the first limiting cavity 21.

[0077] When the wafer is not unpackaged from the plastic bag packaging, the wafer and the plastic bag packaging are placed together in the convex portion 30, and the wafer is unpackaged from the plastic bag packaging, so that the plastic packaging only contacts the wafer at the bottom. In the process of changing from the first state to the second state, the first limiting member 20 slides towards the base 10, and at the same time, the plastic packaging is pressed against the base 10 to limit the wafer. Due to the arrangement of the convex portion 30, the wafer is supported by the convex portion 30 and the plastic bag packaging located in the convex portion 30, and the remaining part of the plastic bag packaging is pressed against the base 10 by the first limiting member 20 and is located on the side of the convex portion 30 away from the wafer. Through the above arrangement, the wafer can be directly limited after contacting the packaging, so as to facilitate the subsequent transfer of the wafer; at the same time, the plastic bag packaging can be pressed against the side of the convex portion 30 away from the wafer, reducing the interference of the plastic bag packaging on the wafer.

[0078] In some embodiments, the bearing device further comprises a plurality of second limit members 40 slidably connected to the base 10, the plurality of second limit members 40 are arranged around the base 10 in the first direction X. The projection of the first limit members 20 in the first direction X at least partially overlaps the projection of the plurality of second limit members 40 in the first direction X. In the first state, at least part of the plurality of second limit members 40 protrude from the bearing surface 11 in the first direction X, and are on the same side of the bearing surface 11 as the first limit members 20 in the first direction X. In the process of changing from the first state to the second state, the first limit members 20 slide towards the base 10 in the first direction X, after the first limit members 20 come into contact with the second limit members 40, the second limit members 40 are driven to slide, so that the second limit members 40 slide into the interior of the base 10.

[0079] In the first state, the second limit members 40 protrude from the bearing surface 11 to form a second limit cavity 41, and the silicon wafer with a plastic bag packaging can be inside the second limit cavity 41, and the second limit members 40 limit the silicon wafer. When the silicon wafer is unpackaged, the first limit members 20 slide towards the base 10 and press the second limit members 40 into the base 10, and the first limit members 20 form a first limit cavity 21, and the first limit members 20 limit the silicon wafer. The mutual cooperation between the first limit members 20 and the second limit members 40 can limit the silicon wafer during unpackaging to ensure the position stability of the silicon wafer.

[0080] Although the present application has been described with reference to the preferred embodiments, various modifications can be made to the present application without departing from the scope of the present application, and equivalent components can be substituted for the components thereof. In particular, the technical features mentioned in each embodiment can be combined in any manner as long as there is no structural conflict. The present application is not limited to the specific embodiments disclosed herein, but includes all technical solutions falling within the scope of the claims.

Claims

1. A silicon wafer carrier device, characterized in that, The base has a bearing surface in a first direction; A first limiting member is connected to the edge of the bearing surface in the first direction and encloses a first limiting cavity; The first limiting member includes an arc-shaped surface that encloses the first limiting cavity, and the arc-shaped surface has an opening structure formed therethrough; The opening structure extends through the arc-shaped surface along one side in a second direction intersecting the first direction; The base includes a bottom surface opposite the bearing surface in the first direction, and in a direction parallel to the second direction and directed from the first limiting cavity to the opening structure, the distance between the bottom surface and the bearing surface in the first direction gradually increases. The straight line extension direction of the arc-shaped surface is perpendicular to the bearing surface.

2. The silicon wafer carrier of claim 1, wherein, A convex portion is provided on the base protruding from the bearing surface, the convex portion is located inside the first limiting cavity and connected with the side wall of the first limiting cavity, and the side surface of the convex portion away from the base is parallel to the bearing surface; 3. The silicon wafer carrier of claim 1, wherein, In the first direction, the side surface of the convex portion away from the base at least partially protrudes from the base. The central angle of the opening structure formed in the first direction is between 180 degrees and 240 degrees; 4. The silicon wafer carrier of claim 1, wherein, And / or, the acute angle between the bearing surface and the bottom surface is between 20 degrees and 40 degrees. The inner diameter of the first limiting cavity gradually increases away from the base in the first direction.

5. The silicon wafer carrier of claim 1, wherein The side wall of the first limiting cavity protrudes and is provided with a plurality of limiting edges, and the plurality of limiting edges are spaced apart in the first direction and extend in the first direction.

6. The silicon wafer carrier of claim 1, wherein The first limiting member is fixedly connected with the base and is integrally formed with the base.

7. The silicon wafer carrier of claim 1, wherein The first limiting member is slidingly connected with the base in the first direction; 8. The silicon wafer carrier of claim 1, wherein, The bearing device has a first state and a second state, in the first state, the first limiting member is spaced apart from the base in the first direction, and in the second state, the first limiting member is abutted with the base in the first direction. The convex portion protruding from the bearing surface of the base is provided with a convex portion, and the projection of the convex portion in the first direction is inside the projection of the inner side wall of the first limiting member in the first direction; 9. The silicon wafer carrier apparatus of claim 8, wherein, In the second state, the convex portion is spaced apart from the inner side wall of the first limiting cavity. ​

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