Spray head and semiconductor process equipment

Abstract

The utility model provides a spray head and semiconductor process equipment, the spray head comprises a first gas uniformizing piece, a second gas uniformizing piece and a spraying piece which are sequentially stacked along the height direction, a first gas uniformizing groove is formed on the upper side of the first gas uniformizing piece, and a plurality of first gas uniformizing holes are formed at the bottom of the first gas uniformizing groove; the first gas uniformizing groove is formed in the first gas uniformizing part and located in the edge area of the first gas uniformizing groove, the first gas uniformizing groove communicates with the second gas uniformizing part through the first gas uniformizing holes, and a plurality of second gas uniformizing holes are formed in the second gas uniformizing part and communicate with the spraying part. According to the utility model, the first gas uniformizing groove is communicated with the gas uniformizing cavity in the second gas uniformizing piece only in the edge area through the first gas uniformizing holes, so that the gas can fully diffuse and flow to the periphery when flowing to the gas uniformizing cavity from the first gas uniformizing groove of the first gas uniformizing piece, and the uniformity of the gas finally sprayed out through the spraying piece is further ensured; therefore, the ionization rate of the gas is ensured.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor process equipment, specifically to a nozzle and a semiconductor process equipment. Background Technology

[0002] Semiconductor equipment often uses preclean chambers. For example, in physical vapor deposition (PVD) thin film equipment, for processes such as integrated circuits (ICs), through-silicon vias (TSVs), and packaging, it is necessary to remove oxides and other impurities from the wafer surface through a preclean chamber. This is to facilitate the deposition of the film on the wafer surface during the subsequent sputtering process in the physical vapor deposition thin film equipment. Otherwise, the residues on the wafer surface will significantly increase the resistance of the circuit, thereby increasing the heat loss of the circuit and affecting the chip performance.

[0003] Pre-cleaning chambers typically use gases such as Ar (argon), He (helium), and H2 (hydrogen) to excite plasma, generating a large number of active groups such as electrons, ions, excited atoms, molecules, and free radicals. These active reactive groups undergo various chemical reactions and physical bombardments with the surface of the wafer to be processed, thereby removing residues from the wafer surface and the bottom of the trenches.

[0004] However, existing pre-cleaning chambers often fail to clean the wafer surface uniformly, making it difficult for the wafer to adhere a film of uniform thickness in subsequent physical vapor deposition processes. Therefore, improving the uniformity of the pre-cleaning process has become a pressing technical problem to be solved in this field. Utility Model Content

[0005] The present invention aims to provide a nozzle and a semiconductor process device, wherein the nozzle can ensure the uniformity of the pre-cleaning process.

[0006] To achieve the above objectives, as one aspect of this utility model, a nozzle is provided for use in semiconductor process equipment. The nozzle includes a first gas equalizing element, a second gas equalizing element, and a spraying element stacked sequentially along the height direction. A first gas equalizing groove is formed on the upper side of the first gas equalizing element, and a top cover seals the first gas equalizing groove. A plurality of first gas equalizing holes are formed at the bottom of the first gas equalizing groove, and the plurality of first gas equalizing holes are located in the edge region of the first gas equalizing groove. The first gas equalizing groove is connected to the second gas equalizing element through the plurality of first gas equalizing holes. A plurality of second gas equalizing holes are formed on the second gas equalizing element, and the second gas equalizing holes are connected to the spraying element.

[0007] As an optional embodiment of the present invention, the first air distribution groove includes a first central groove located in the central region and a plurality of first strip grooves located in the edge region. The plurality of first strip grooves are radially distributed around the first central groove and are connected to the first central groove.

[0008] As an optional embodiment of this utility model, the first air distribution holes are distributed on the edge of the first central groove and / or in multiple first strip grooves.

[0009] As an optional embodiment of the present invention, a second gas equalization groove is formed on the upper side of the second gas equalization member. The second gas equalization groove includes a second central groove located in the central region, a plurality of second strip grooves located in the edge region, and a plurality of annular grooves.

[0010] As an optional embodiment of this utility model, a plurality of second strip grooves are radially distributed around the second central groove and communicate with the second central groove, and a plurality of annular grooves surround the second central groove and intersect with a plurality of first strip grooves.

[0011] As an optional embodiment of this utility model, a plurality of the second air distribution holes are distributed in the second central groove and / or a plurality of the second strip grooves.

[0012] As an optional embodiment of this utility model, the first strip groove and the second strip groove of the first air-regulating groove are staggered in the orthographic projection direction.

[0013] As an optional embodiment of this utility model, a third air-equalizing groove is formed at the bottom of the second air-equalizing component, and the spraying component blocks the third air-equalizing groove to form an air-equalizing cavity.

[0014] As an optional embodiment of this utility model, a first sealing ring groove is formed on the bottom surface of the top cover. The first sealing ring groove surrounds the outside of the first air distribution groove. A first sealing ring is provided in the first sealing ring groove, and the first sealing ring seals the gap between the top cover and the first air distribution component.

[0015] As an optional embodiment of the present invention, a second sealing ring groove is formed on the bottom surface of the first gas equalizer, the second sealing ring groove surrounds the outside of the second gas equalizer groove, a second sealing ring is provided in the second sealing ring groove, and the second sealing ring seals the gap between the first gas equalizer and the second gas equalizer.

[0016] As an optional embodiment of this utility model, a third sealing ring groove is formed on the bottom surface of the second air-distributing component. The third sealing ring groove surrounds the outside of the air-distributing cavity, and a third sealing ring is provided in the third sealing ring groove. The third sealing ring seals the gap between the second air-distributing component and the spraying component.

[0017] As an optional embodiment of this utility model, the spraying component has a plurality of air passages extending from the top of the spraying component to the bottom of the spraying component.

[0018] As an optional embodiment of this utility model, the air passage includes a plurality of vertical air passages extending along the axial direction of the spraying component, and an oblique air passage surrounding the plurality of vertical air passages and having an angle between its extending direction and the axial direction of the spraying component, wherein the bottom end of the oblique air passage is deflected away from the axial direction of the spraying component.

[0019] As an optional embodiment of this utility model, the angle between the oblique air passage and the axial direction of the spraying component is 5° to 10°.

[0020] As an optional embodiment of this utility model, the spraying component includes a spraying body and a mounting plate formed integrally, the mounting plate surrounds the spraying body, and the top surface of the mounting plate is flush with the top surface of the spraying body, and the oblique air passage is formed in the spraying body.

[0021] As an optional embodiment of this utility model, the diameter of the spray body is 100mm to 150mm.

[0022] As an optional embodiment of this utility model, a fourth sealing ring groove is formed on the bottom surface of the mounting plate. The fourth sealing ring groove surrounds the outside of the spray body, and a fourth sealing ring is disposed in the fourth sealing ring groove. The fourth sealing ring is used to seal the gap between the mounting plate and the top surface of the process chamber of the semiconductor process equipment.

[0023] As a second aspect of this utility model, a semiconductor process apparatus is provided, including a process chamber and the aforementioned nozzle, wherein the nozzle is disposed on the process chamber and is used to supply gas into the process chamber.

[0024] In the nozzle and semiconductor process equipment provided by this utility model, a first gas equalization groove is formed on the top of the first gas equalization component, and the first gas equalization groove is connected to the gas equalization cavity in the second gas equalization component only in the edge area through the first gas equalization hole. Thus, when the gas flows from the first gas equalization groove of the first gas equalization component to the gas equalization cavity, it can fully disperse and flow in all directions, thereby ensuring the uniformity of the gas finally sprayed out by the spraying component, thereby ensuring the ionization rate of the gas, and ensuring the etching and cleaning effect of the wafer. Attached Figure Description

[0025] The accompanying drawings are provided to further illustrate the present invention and form part of the specification. They are used together with the following detailed description to explain the present invention, but do not constitute a limitation thereof. In the drawings:

[0026] Figure 1 This is a schematic diagram of the structure of the nozzle provided in an embodiment of the present utility model;

[0027] Figure 2 This is a schematic diagram of the gas flow path in the nozzle provided in this embodiment of the utility model;

[0028] Figure 3 This is a schematic diagram of the structure of the first air-distributing element in the nozzle provided in this embodiment of the utility model;

[0029] Figure 4 This is a schematic diagram of the structure of the second air-distributing element in the nozzle provided in this embodiment of the utility model;

[0030] Figure 5 This is a schematic diagram showing the positional relationship between the groove structure in the first air-distributing component and the groove structure in the second air-distributing component in the nozzle provided in this embodiment of the utility model.

[0031] Figure 6 This is a schematic diagram of the spraying component in the nozzle provided in this embodiment of the utility model.

[0032] Explanation of reference numerals in the attached figures:

[0033] Top cover 100;

[0034] Air intake connector 110;

[0035] First sealing ring groove 120;

[0036] First gas equalization component 200;

[0037] First gas equalization groove 210;

[0038] First central slot 211;

[0039] First groove 212;

[0040] First air distribution hole 220;

[0041] Second sealing ring groove 230;

[0042] Second gas equalizer 300;

[0043] Second gas equalization groove 310;

[0044] Second central slot 311;

[0045] Second groove 312;

[0046] Annular groove 313;

[0047] Second air distribution hole 320;

[0048] Air distribution chamber 330;

[0049] Third sealing ring groove 340;

[0050] Sprayer part 400;

[0051] Spray the main body 410;

[0052] Vertical airway 411;

[0053] Angled airway 412;

[0054] Mounting plate 420;

[0055] Fourth sealing ring groove 421. Detailed Implementation

[0056] The specific embodiments of this utility model will be described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are for illustration and explanation only and are not intended to limit the scope of this utility model.

[0057] In existing pre-cleaning chambers, process gases typically reach the center of the top of the chamber through air channels formed by the chamber sidewalls and the upper electrode cover. The gases are then gathered at one point by the central air inlet cover and enter the chamber directly from the top through a single air hole. This process does not involve gas homogenization, and the gases rush straight towards the chamber base in the form of a gas column. It is difficult for the gases to be evenly distributed in the chamber, resulting in a low gas ionization rate, which affects the etching rate and uniformity of the wafer.

[0058] To address the aforementioned technical problems, as one aspect of this utility model, a nozzle is provided for use in semiconductor process equipment, such as... Figure 1 , Figure 2 As shown, the nozzle includes a first air equalizer 200, a second air equalizer 300, and a spraying component 400 stacked sequentially along the height direction. A first air equalizer groove 210 is formed on the upper side of the first air equalizer 200, and a plurality of first air equalizer holes 220 are formed at the bottom of the first air equalizer 210. The plurality of first air equalizer holes 220 are located in the edge region of the first air equalizer 210. The first air equalizer 210 is connected to the second air equalizer 300 through the plurality of first air equalizer holes 220. A plurality of second air equalizer holes 320 are formed on the second air equalizer 300, and the second air equalizer holes 320 are connected to the spraying component 400.

[0059] In the nozzle provided by this utility model, a first gas equalization groove 210 is formed on the top of the first gas equalization component 200, and the first gas equalization groove 210 is connected to the gas equalization cavity 330 in the second gas equalization component 300 only in the edge area through the first gas equalization hole 220. Thus, when the gas flows from the first gas equalization groove 210 of the first gas equalization component 200 to the gas equalization cavity 330, it can be fully dispersed and flowed in all directions, thereby ensuring the uniformity of the gas finally sprayed out by the spraying component 400, thereby ensuring the ionization rate of the gas and improving the etching and cleaning effect of the wafer.

[0060] As an optional embodiment of this utility model, such as Figure 3 , Figure 5 As shown, the first gas equalization groove 210 includes a first central groove 211 located in the central region and a plurality of first strip grooves 212 located in the edge region. The plurality of first strip grooves 212 are radially distributed around the first central groove 211 and are connected to the first central groove 211.

[0061] As an optional embodiment of this utility model, such as Figure 3 , Figure 5 As shown, the first air-distributing holes 220 are distributed on the edge of the first central groove 211 and / or in multiple first strip grooves 212, that is, the first air-distributing holes 220 are distributed outside the central region of the first air-distributing groove 210, thereby ensuring that the fluid injected from the central position of the first air-distributing groove 210 is evenly dispersed in all directions.

[0062] As an optional embodiment of this utility model, such as Figure 1 , Figure 2 As shown, the nozzle also includes a top cover 100 disposed on the top of the first gas equalizer 200. The top cover 100 seals the first gas equalizer groove 210, and an air inlet for injecting gas is formed on the top cover 100.

[0063] Optionally, such as Figure 1 , Figure 2 As shown, the nozzle also includes an air inlet connector 110, which is connected to the air inlet of the top cover 100.

[0064] As an optional embodiment of this utility model, such as Figure 1 , Figure 5 As shown, the distribution positions of the multiple second air distribution holes 320 correspond to the edge region and the center region of the first air distribution groove 210.

[0065] As an optional embodiment of this utility model, such as Figure 1 , Figure 2 As shown, a second gas equalization groove 310 is formed on the upper side of the second gas equalization component, such as... Figure 4 , Figure 5As shown, the second gas equalization groove 310 includes a second central groove 311 located in the central region, a plurality of second strip grooves 312 located in the edge region, and a plurality of annular grooves 313.

[0066] In this embodiment of the utility model, a second gas equalization groove 310 is also formed on the top of the second gas equalization component 300. After the gas enters the nozzle from the air inlet, it passes through the first gas equalization groove 210, the second gas equalization groove 310 and the gas equalization chamber 330 in sequence. The triple gas equalization further improves the uniformity of the gas sprayed out by the spray component 400, thereby further ensuring the gas ionization rate.

[0067] Specifically, such as Figure 2 As shown, after the gas enters the nozzle through the air inlet, it first flows outwards under the guiding effect of the first uniform air groove 210 and the first uniform air hole 220 located in the edge region, and then enters the second uniform air groove 310 from the edge region. After being uniformly mixed twice, the gas in the second uniform air groove 310 enters the uniform air chamber 330 through the second uniform air hole 320, and then enters the spraying component 400 evenly.

[0068] As an optional embodiment of this utility model, such as Figure 4 , Figure 5 As shown, multiple second strip grooves 312 are radially distributed around the second central groove 311 and are connected to the second central groove 311. Multiple annular grooves 313 surround the second central groove 311 and intersect with the multiple second strip grooves 312. Second uniform air holes 320 are distributed in the second central groove 311.

[0069] As an optional embodiment of this utility model, such as Figure 4 , Figure 5 As shown, multiple second air distribution holes 320 are distributed in the second central groove 311 and / or multiple second strip grooves 312.

[0070] As an optional embodiment of this utility model, the width of the second strip groove 312 is 3mm to 4mm.

[0071] As an optional embodiment of this utility model, the width of the annular groove 313 is 3mm to 4mm.

[0072] To ensure uniform air distribution, as a preferred embodiment of this invention, such as... Figure 1 , Figure 5 As shown, the first strip groove 212 of the first gas equalization groove 210 and the second strip groove 312 of the second gas equalization groove 310 are staggered in the orthographic projection direction, thereby preventing the gas in the first gas equalization hole 220 from flowing into the second gas equalization groove 310 and directly entering the second gas equalization hole 320 and continuing to flow downward, so that the gas can be fully diffused in the second gas equalization groove 310, further ensuring the gas equalization effect.

[0073] To further improve the ionization rate of the gas, as a preferred embodiment of this utility model, such as... Figure 1 , Figure 2 As shown, a third air-equalizing groove is formed at the bottom of the second air-equalizing component 300, and the spraying component 400 blocks the third air-equalizing groove to form an air-equalizing cavity 330. The air-equalizing cavity 330 is connected to the spraying component 400 through a plurality of second air-equalizing holes 320.

[0074] In this embodiment of the invention, a gas equalization chamber 330 is formed between the second gas equalization component 300 and the spraying component 400, thereby enabling the gas to be equalized again through the gas equalization chamber 330, further ensuring the ionization rate of the gas.

[0075] As an optional embodiment of this utility model, the diameter of the first air distribution hole 220 is 2mm to 3mm, and the diameter of the second air distribution hole 320 is 2mm to 3mm. The diameter of the air distribution hole should not be too large. If the diameter is too large, the number of air distribution holes should be reduced accordingly, which will affect the air distribution effect.

[0076] As an optional embodiment of this utility model, the width of the first strip groove 212 is 3mm to 4mm.

[0077] To ensure the airtightness of the internal air passage of the nozzle, as a preferred embodiment of this utility model, such as... Figure 1 As shown, a first sealing ring groove 120 is formed on the bottom surface of the top cover 100. The first sealing ring groove 120 surrounds the outside of the first air distribution groove 210. A first sealing ring is provided in the first sealing ring groove 120, and the first sealing ring seals the gap between the top cover 100 and the first air distribution member 200.

[0078] To ensure the airtightness of the internal air passage of the nozzle, as a preferred embodiment of this utility model, such as... Figure 1 As shown, a second sealing ring groove 230 is formed on the bottom surface of the first gas equalizer 200. The second sealing ring groove 230 surrounds the outside of the second gas equalizer 310. A second sealing ring is provided in the second sealing ring groove 230. The second sealing ring seals the gap between the first gas equalizer 200 and the second gas equalizer 300.

[0079] To ensure the airtightness of the internal air passage of the nozzle, as a preferred embodiment of this utility model, such as... Figure 1 As shown, a third sealing ring groove 340 is formed on the bottom surface of the second air distribution component 300. The third sealing ring groove 340 surrounds the outside of the air distribution cavity 330. A third sealing ring is provided in the third sealing ring groove 340. The third sealing ring seals the gap between the second air distribution component 300 and the spraying component 400.

[0080] As an optional embodiment of this utility model, such as Figure 1As shown, the spraying component 400 has a plurality of air passages (including vertical air passage 411 and oblique air passage 412) extending from the top of the spraying component 400 to the bottom of the spraying component 400.

[0081] As an optional embodiment of this utility model, such as Figure 1 , Figure 6 As shown, the air passage includes a plurality of vertical air passages 411 extending along the axial direction of the spraying component 400, and an oblique air passage 412 surrounding the plurality of vertical air passages 411 and having an angle between its extension direction and the axial direction of the spraying component 400. The bottom end of the oblique air passage 412 is deflected away from the axial direction of the spraying component 400.

[0082] As an optional embodiment of this utility model, the included angle between the oblique air passage 412 and the axial direction of the spraying component 400 is 5° to 10°.

[0083] As an optional embodiment of this utility model, such as Figure 1 , Figure 6 As shown, the spraying component 400 includes a spraying body 410 and a mounting plate 420 formed integrally. The mounting plate 420 surrounds the spraying body 410, and the top surface of the mounting plate 420 is flush with the top surface of the spraying body 410. An oblique air passage 412 is formed in the spraying body 410.

[0084] As an optional embodiment of this utility model, the diameter of the spray body 410 is 100mm to 150mm.

[0085] To ensure the airtightness of the internal air passage of the nozzle, as a preferred embodiment of this utility model, such as... Figure 1 As shown, a fourth sealing ring groove 421 is formed on the bottom surface of the mounting plate 420. The fourth sealing ring groove 421 surrounds the outside of the spray body 410. A fourth sealing ring is provided in the fourth sealing ring groove 421. The fourth sealing ring is used to seal the gap between the mounting plate 420 and the top surface of the process chamber of the semiconductor process equipment.

[0086] As an optional embodiment of this utility model, the top cover 100, the first air-regulating component 200, the second air-regulating component 300, and the spraying component 400 are fixedly connected by bolts.

[0087] As a second aspect of this utility model, a semiconductor process apparatus is provided, including a process chamber and a front nozzle, the nozzle being disposed on the process chamber and used to supply gas into the process chamber.

[0088] As an optional embodiment of this utility model, the semiconductor process equipment is a precleaning device.

[0089] In the semiconductor process equipment provided by this utility model, a first gas equalization groove 210 is formed on the top of the first gas equalization component 200 of the nozzle, and the first gas equalization groove 210 is connected to the gas equalization cavity 330 in the second gas equalization component 300 only in the edge area through the first gas equalization hole 220. Thus, when the gas flows from the first gas equalization groove 210 of the first gas equalization component 200 to the gas equalization cavity 330, it can be fully dispersed and flowed in all directions, thereby ensuring the uniformity of the gas finally sprayed out by the spraying component 400, thereby ensuring the ionization rate of the gas and improving the etching and cleaning effect of the wafer.

[0090] It is understood that the above embodiments are merely exemplary implementations used to illustrate the principles of this utility model, and the utility model is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of this utility model, and these modifications and improvements are also considered to be within the protection scope of this utility model.

Claims

1. A nozzle for use in semiconductor process equipment, characterized in that, The nozzle includes a first air equalizer, a second air equalizer, and a spraying component stacked sequentially along the height direction. A first air equalizer groove is formed on the upper side of the first air equalizer, and a plurality of first air equalizer holes are formed at the bottom of the first air equalizer groove. The plurality of first air equalizer holes are located in the edge region of the first air equalizer groove. The first air equalizer groove is connected to the second air equalizer through the plurality of first air equalizer holes. A plurality of second air equalizer holes are formed on the second air equalizer, and the second air equalizer holes are connected to the spraying component.

2. The nozzle according to claim 1, characterized in that, The first gas equalization groove includes a first central groove located in the central region and a plurality of first strip grooves located in the edge region. The plurality of first strip grooves are radially distributed around the first central groove and are connected to the first central groove.

3. The nozzle according to claim 2, characterized in that, The first air distribution holes are distributed on the edge of the first central groove and / or in multiple of the first strip grooves.

4. The nozzle according to claim 1, characterized in that, The upper side of the second gas equalizing component is formed with a second gas equalizing groove, which includes a second central groove located in the central region, a plurality of second strip grooves located in the edge region, and a plurality of annular grooves.

5. The nozzle according to claim 4, characterized in that, Multiple second strip grooves are radially distributed around the second central groove and communicate with the second central groove, and multiple annular grooves surround the second central groove and intersect with multiple second strip grooves.

6. The nozzle according to claim 4, characterized in that, Multiple second air distribution holes are distributed in the second central groove and / or multiple second strip grooves.

7. The nozzle according to claim 4, characterized in that, The first strip groove of the first gas equalization groove and the second strip groove of the second gas equalization groove are staggered in the orthographic projection direction.

8. The nozzle according to claim 1, characterized in that, The bottom of the second gas equalizer has a third gas equalizer groove, and the spraying component blocks the third gas equalizer groove to form a gas equalizer cavity.

9. The nozzle according to any one of claims 1 to 7, characterized in that, The spraying component has a plurality of vertical air channels extending along the axial direction of the spraying component, and an oblique air channel surrounding the plurality of vertical air channels and having an angle between its extension direction and the axial direction of the spraying component. The bottom end of the oblique air channel is deflected away from the axial direction of the spraying component.

10. A semiconductor process apparatus, characterized in that, It includes a process chamber and a nozzle as described in any one of claims 1 to 9, the nozzle being disposed on the process chamber and used to supply gas to the process chamber.

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