Silicon carbide powder decarburization device
By designing a silicon carbide powder decarburization device, and utilizing the oxygen flow path and multiple storage spaces, the problem of impurity contamination in traditional decarburization processes was solved, achieving high-purity and high-efficiency silicon carbide powder decarburization.
Patent Information
- Application Number
- CN202423066900.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-12
- Publication Date
- 2025-11-14
- Estimated Expiration
- 2034-12-12
AI Technical Summary
After the traditional decarburization process of silicon carbide powder, impurities remain in the silicon carbide powder, leading to a decrease in purity and affecting the performance of devices during subsequent crystal growth.
A silicon carbide powder decarburization device is designed. By setting vent holes, a storage space and an outlet hole in the shell to form an oxygen flow path, and using multiple material boxes to form a storage space, the device ensures that oxygen reacts fully with silicon carbide powder, avoids impurities from entering, and improves purity.
This achievement enabled high-purity decarburization of silicon carbide powder, ensuring the quality of crystal growth and device performance, and improving production efficiency and purity.
Smart Images
Figure CN223542998U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of silicon carbide crystal material preparation technology, and in particular to a silicon carbide powder decarburization device. Background Technology
[0002] Silicon carbide (SiC), as a representative of third-generation broadband semiconductor materials, holds an irreplaceable position in high-temperature, high-pressure, and high-frequency applications due to its superior properties such as high critical breakdown electric field, high thermal conductivity, and high electron saturation mobility. Currently, physical vapor transport (PVT) has become the mainstream process for silicon carbide single crystal growth. During PVT growth, the purity of the silicon carbide powder is one of the key factors affecting crystal quality. Impurities in the silicon carbide powder not only lead to defects such as microtubes and dislocations in the crystal but also reduce the electrical performance, breakdown voltage, and reliability of the device.
[0003] In related technologies, silicon carbide powder is mainly prepared through a modified self-propagating high-temperature synthesis (SHS) method. The SHS method involves mixing silicon powder and carbon powder in a specific ratio under an inert atmosphere, and then locally igniting the mixture, relying on the heat released by the reaction to sustain the reaction. However, due to the solid-state reaction characteristics of the modified SHS method, diffusion between reactants is limited, and the reaction temperature and pressure are difficult to control precisely, resulting in the presence of free carbon in the synthesized powder. This free carbon in silicon carbide powder can severely hinder subsequent single-crystal growth. The traditional process for removing free carbon from silicon carbide powder is a decarburization process, which typically includes multiple steps such as crushing, magnetic separation, rinsing, acid washing, and sieving.
[0004] However, the decarburization process of traditional silicon carbide powder results in impurities in the decarburized silicon carbide powder, which leads to a decrease in the purity of the silicon carbide powder. This can easily cause defects in the silicon carbide powder during subsequent crystal growth, affecting device performance. Utility Model Content
[0005] This application provides a silicon carbide powder decarburization device to solve the technical problem in related technologies where impurities exist in the decarburized silicon carbide powder, which can easily cause defects in the silicon carbide powder during subsequent crystal growth and affect device performance.
[0006] This application provides a silicon carbide powder decarburization device, including: a shell and a material box;
[0007] The shell has a receiving cavity, and the bottom of the shell is provided with a vent that communicates with the receiving cavity. The vent is used to introduce oxygen into the receiving cavity.
[0008] Multiple material boxes are provided, and the multiple material boxes are arranged side by side and spaced apart along the height direction of the receiving cavity, forming a reaction space between two adjacent material boxes; the material boxes are provided with partitions, which divide the material boxes into multiple storage spaces;
[0009] A receiving space is formed between one end of the material box and the first side wall of the receiving cavity. The receiving space is connected to the reaction space and the vent. The other end of the material box is closed to the second side wall of the receiving cavity, and an vent is formed at the other end of the material box to connect to the reaction space. The vent is inclined from the outer side wall of the material box toward the bottom wall of the storage space.
[0010] In one feasible implementation, multiple partitions are evenly spaced along the extension direction of the material box.
[0011] In one feasible implementation, the receiving cavity has a first protrusion formed on the sidewalls on both sides of the material box, the first protrusion extends along the setting direction of the material box, and a track groove is formed along the extending direction of the first protrusion.
[0012] The bottom wall of the material box has a second protrusion that matches the groove of the track.
[0013] In one feasible implementation, the partition sidewall has a slot, and the material box sidewall has a buckle that matches the slot.
[0014] Alternatively, the partition sidewall has a snap fastener, and the material box sidewall has a slot that matches the snap fastener.
[0015] In one feasible implementation, the partition height is the same as the end wall height of the material box.
[0016] In one feasible implementation, both the housing and the material box are made of quartz.
[0017] In one feasible implementation, casters are provided at the bottom of the housing.
[0018] This application provides a silicon carbide powder decarburization device. This embodiment establishes an oxygen flow and reaction path through the arrangement of vents, a containment space, a reaction space, and an outlet. The containment space ensures sufficient gas flow within the containment chamber, thereby improving oxygen utilization efficiency and effectively removing free carbon from the silicon carbide powder, ensuring the purity of the decarburized silicon carbide powder. Furthermore, this embodiment uses multiple material boxes, each separated by partitions to form multiple storage spaces. This allows for sufficient reaction between oxygen and the silicon carbide powder in each storage space, ensuring uniformity of the decarburization effect. The multiple material boxes also increase the loading capacity and production efficiency. Even further, in this embodiment, the outlet is angled from the outer wall of the material box towards the bottom wall of the storage space, preventing external dust and impurities from entering the containment chamber through the outlet, thus avoiding impurities in the silicon carbide powder and further improving the purity of the silicon carbide powder. The present application provides a decarburization device that achieves high purity and high reaction efficiency in decarburized silicon carbide powder. Attached Figure Description
[0019] The accompanying drawings, which are included to provide a further understanding of this application and form part of this application, illustrate exemplary embodiments and are used to explain this application, but do not constitute an undue limitation of this application. In the drawings:
[0020] Figure 1 This is a schematic diagram of a silicon carbide powder decarburization device provided in one embodiment of this application;
[0021] Figure 2 yes Figure 1 Schematic diagram of the middle shell structure;
[0022] Figure 3 yes Figure 1 Schematic diagram of the material box structure;
[0023] Figure 4 yes Figure 1 The diagram shows a cross-sectional view of the structure, illustrating the gas flow path.
[0024] Explanation of reference numerals in the attached figures:
[0025] 100 - Shell; 200 - Material box;
[0026] 110 - Receiving cavity; 120 - Vent hole; 130 - First protrusion; 131 - Track groove; 140 - Receiving space;
[0027] 210-Baffle; 220-Storage space; 230-Vent vent; 240-Second protrusion; 250-Operating handle; 260-Reaction space. Detailed Implementation
[0028] To enable those skilled in the art to better understand the technical solutions in this application, the technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments in this application, all other embodiments obtained by those of ordinary skill in the art without creative effort should fall within the scope of protection of this application.
[0029] It should be noted that many specific details are set forth in the following description in order to provide a full understanding of this application. However, this application may also be implemented in other ways different from those described herein. Therefore, the scope of protection of this application is not limited to the specific embodiments disclosed below.
[0030] In the description of this application, it should be understood that the terms "center," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "axial," "radial," and "circumferential," etc., indicating orientation or positional relationships, are based on the orientation or positional relationships shown in the accompanying drawings and are used only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application. In this application, unless otherwise expressly specified and limited, the first feature being "upper" or "lower" than the second feature can mean that the first and second features are in direct contact, or that the first and second features are in indirect contact through an intermediate medium.
[0031] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral unit; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. However, specifying a direct connection indicates that the two entities connected are not linked by an intermediate structure, but are simply connected to form a whole. For those skilled in the art, the specific meaning of the above terms in this application can be understood according to the specific circumstances.
[0032] In this application, the use of terms such as "first," "second," etc., is for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined with "first" or "second" may explicitly or implicitly include at least one of those features.
[0033] Silicon carbide (SiC), as a representative of third-generation broadband semiconductor materials, holds an irreplaceable position in high-temperature, high-pressure, and high-frequency applications due to its superior properties such as high critical breakdown electric field, high thermal conductivity, and high electron saturation mobility. Especially in core components of new energy vehicle drive systems, such as DC-DC converters, on-board chargers (OBCs), and motor controllers, as well as in strategic emerging industries such as photovoltaic inverters, 5G base station RF devices, and aerospace equipment, the demand for SiC devices is experiencing explosive growth. Currently, Physical Vapor Transport (PVT) has become the mainstream process for growing single crystals of SiC. During PVT growth, the purity of the SiC powder is one of the key factors affecting crystal quality. Impurities in the SiC powder not only lead to defects such as microtubes and dislocations in the crystal but also reduce the electrical performance, breakdown voltage, and reliability of the device.
[0034] In related technologies, silicon carbide powder is mainly prepared through a modified self-propagating high-temperature synthesis (SHS) method. The SHS method involves mixing silicon powder and carbon powder in a specific ratio under an inert atmosphere, and then locally igniting the mixture, relying on the heat released by the reaction to sustain the reaction. However, due to the solid-state reaction characteristics of the modified SHS method, diffusion between reactants is limited, and the reaction temperature and pressure are difficult to control precisely, resulting in the presence of free carbon in the synthesized powder. This free carbon in silicon carbide powder can severely hinder subsequent single-crystal growth. The traditional process for removing free carbon from silicon carbide powder is a decarburization process, which typically includes multiple steps such as crushing, magnetic separation, rinsing, acid washing, and sieving.
[0035] However, the decarburization process of traditional silicon carbide powder results in impurities in the decarburized silicon carbide powder, which leads to a decrease in the purity of the silicon carbide powder. This can easily cause defects in the silicon carbide powder during subsequent crystal growth, affecting device performance.
[0036] Therefore, this application provides a silicon carbide powder decarburization device to solve the technical problem in the related art that impurities exist in the decarburized silicon carbide powder, which can easily cause defects in the silicon carbide powder during subsequent crystal growth and affect the performance of the device.
[0037] Figure 1 This is a schematic diagram of a silicon carbide powder decarburization device provided in one embodiment of this application; Figure 2 yes Figure 1 Schematic diagram of the middle shell structure; Figure 3 yes Figure 1 A schematic diagram of the structure of the material box.
[0038] Firstly, referring to Figures 1 to 3This application provides a silicon carbide powder decarburization device, including: a shell 100 and a material box 200;
[0039] The housing 100 has a receiving cavity 110, and the bottom of the housing 100 is provided with a vent 120 communicating with the receiving cavity 110. The vent 120 is used to introduce oxygen into the receiving cavity 110.
[0040] Multiple material boxes 200 are provided, and the multiple material boxes 200 are arranged side by side and spaced apart along the height direction of the receiving cavity 110, forming a reaction space 260 between two adjacent material boxes 200; a partition 210 is provided inside the material box 200, and the partition 210 divides the material box 200 into multiple storage spaces 220.
[0041] A receiving space 140 is formed between one end of the material box 200 and the first side wall of the receiving cavity 110. The receiving space 140 is connected to the reaction space 260 and the vent 120 respectively. The other end of the material box 200 is closed to the second side wall of the receiving cavity 110, and a vent 230 is formed at the other end of the material box 200, which is connected to the reaction space 260. The vent 230 is inclined from the outer side wall of the material box 200 toward the bottom wall of the storage space 220.
[0042] It should be noted that both the housing 100 and the material box 200 are made of high-purity quartz material to prevent metal impurities from being introduced into the silicon carbide powder during the decarburization process. Of course, the partition 210, being part of the material box 200, is also made of high-purity quartz.
[0043] For example, the material box 200 can be divided into storage spaces 220 of different shapes and sizes by using partitions 210 as needed.
[0044] For example, the receiving cavity 110 is provided with guide rails on the side walls on both sides of the material box 200, and rollers that are compatible with the guide rails are provided on the side walls of the material box 200, so as to enable the material box 200 to be installed in the receiving cavity 110 or removed from the receiving cavity 110.
[0045] For example, the height of the receiving cavity 110 can be set to 400mm to 800mm, that is, the height of the receiving cavity 110 can be set to dimensions such as 400mm, 450mm, 485.5mm, and 800mm. The end wall height of the material box 200 can be set to 60mm to 80mm, that is, the end wall height of the material box 200 can be set to dimensions such as 60mm, 70mm, 75.5mm, and 80mm.
[0046] For example, the vent 120 can be provided in the bottom middle area of the receiving cavity 110. The diameter of the vent 120 is set to 20mm to 50mm, that is, the diameter of the vent 120 can be set to sizes such as 20mm, 30mm, 45mm, and 50mm.
[0047] Furthermore, the length of the accommodating space 140 along the extending direction of the material box 200 is set to 40mm to 50mm. That is, the length of the accommodating space 140 along the extending direction of the material box 200 can be set to dimensions such as 40mm, 42mm, 45mm, and 50mm.
[0048] Figure 4 yes Figure 1 The diagram shows a cross-sectional view of the structure, illustrating the gas flow path.
[0049] In specific implementation, refer to Figure 4 After spreading silicon carbide powder evenly in the storage space 220 of each material box 200, oxygen is introduced into the vent 120. The oxygen enters the bottom of the receiving cavity 110 through the vent 120, diffuses from the bottom of the receiving cavity 110 to the receiving space 140, and then diffuses from the receiving space 140 to the reaction space 260 of the material box 200. The oxygen reacts with free carbon in the reaction space 260. The carbon monoxide, carbon dioxide, and unreacted oxygen produced after the reaction flow out through the vent 230 of the material box 200. Figure 4 The middle arrow indicates the flow path of oxygen.
[0050] From the above description, it can be seen that this solution achieves the following technical effects:
[0051] This application provides a silicon carbide powder decarburization device. The device utilizes a ventilation hole 120, a receiving space 140, a reaction space 260, and an outlet 230 to create an oxygen flow and reaction path. The receiving space 140 ensures sufficient gas flow within the receiving cavity 110, thereby improving oxygen utilization efficiency and effectively removing free carbon from the silicon carbide powder, ensuring the purity of the decarburized silicon carbide powder. Furthermore, the device employs multiple material boxes 200, each separated by a partition 210 to form multiple storage spaces 220. This allows for sufficient reaction between oxygen and the silicon carbide powder in each storage space 220, ensuring uniformity of the decarburization effect. The multiple material boxes 200 also increase the loading capacity and production efficiency. Furthermore, in this embodiment, by setting the vent 230 to be inclined from the outer wall of the material box 200 towards the bottom wall of the storage space 220, external dust and impurities can be prevented from entering the receiving cavity 110 through the vent 230, thus preventing impurities from being mixed into the silicon carbide powder and further improving the purity of the silicon carbide powder. Through the configuration of this embodiment, a decarburization device is provided that results in high purity and high reaction efficiency of the decarburized silicon carbide powder.
[0052] For example, a plurality of partitions 210 are evenly spaced along the extension direction of the material box 200.
[0053] For example, the spacing between adjacent partitions 210 can be set to 40mm to 50mm, that is, the spacing between adjacent partitions 210 can be set to sizes such as 40mm, 43mm, 45.5mm, and 50mm.
[0054] In practical implementation, with the length of the material box 200 remaining constant, the reaction between silicon carbide powder and oxygen becomes more complete as the number of partitions 210 increases. However, the amount of silicon carbide powder contained in the material box 200 decreases, and the cost of the decarburization device also increases with the number of partitions 210. Setting the spacing between adjacent partitions 210 to 40mm-50mm not only ensures a complete reaction between silicon carbide powder and oxygen but also guarantees the amount of reacting material, while also controlling costs.
[0055] In this embodiment, multiple partitions 210 are evenly spaced along the extension direction of the material box 200, thereby enabling the storage space 220 to be distributed along the oxygen flow direction, so that the silicon carbide powder in the storage space 220 can react better with oxygen.
[0056] For example, the receiving cavity 110 has a first protrusion 130 formed on the sidewalls on both sides of the material box 200. The first protrusion 130 extends along the setting direction of the material box 200, and a track groove 131 is formed along the extending direction of the first protrusion 130.
[0057] The bottom wall of the material box 200 has a second protrusion 240 that matches the track groove 131.
[0058] For example, the outer wall of the material box 200 is also provided with an operating handle 250 to facilitate the taking and putting away of the material box 200.
[0059] In this embodiment, the material box 200 and the receiving cavity 110 are disassembled and installed by setting the track groove 131 and the second protrusion 240. When a material box 200 is damaged, it can be replaced individually, avoiding the waste of resources caused by replacing the entire decarbonization device.
[0060] For example, the partition 210 has a slot formed on its side wall, and the material box 200 has a buckle that matches the slot on its side wall;
[0061] Alternatively, the partition 210 has a snap-fit on its side wall, and the material box 200 has a slot on its side wall that matches the snap-fit.
[0062] The embodiments of this application facilitate the assembly and disassembly of the partition 210 and the material box 200 by setting up buckles and slots, and the partition 210 and the material box 200 can be assembled or disassembled according to actual production needs.
[0063] In some other examples, the height of partition 210 is the same as the height of the end wall of material box 200.
[0064] For example, the height of the partition 210 can be set to 60mm to 80mm, that is, the height of the partition 210 can be a suitable height such as 60mm, 70mm, 75mm, 80mm, etc.
[0065] In some examples, both the housing and the material box are made of quartz.
[0066] In this embodiment, by setting both the housing 100 and the material box 200 as quartz components, metal impurities are avoided and introduced during the decarburization process of silicon carbide powder, thereby improving the purity of the silicon carbide powder after decarburization.
[0067] In one possible implementation, a caster wheel (not shown) is provided at the bottom of the housing 100.
[0068] This embodiment of the application provides casters at the bottom of the housing 100, which facilitates changes in the direction and position of the decarbonization device. Operators can adjust the position and direction of the decarbonization device according to actual usage.
[0069] It is readily understood that, based on the several embodiments provided in this application, those skilled in the art can combine, split, or reorganize the embodiments of this application to obtain other embodiments, none of which exceed the protection scope of this application.
[0070] The above detailed embodiments further illustrate the purpose, technical solution, and beneficial effects of the embodiments of this application. It should be understood that the above are merely specific embodiments of the embodiments of this application and are not intended to limit the protection scope of the embodiments of this application. Any modifications, equivalent substitutions, improvements, etc., made on the basis of the technical solutions of the embodiments of this application should be included within the protection scope of the embodiments of this application.
Claims
1. A silicon carbide powder decarburization device, characterized in that, include: Casing and material box; The shell has a receiving cavity, and the bottom of the shell is provided with a vent hole communicating with the receiving cavity. The vent hole is used to introduce oxygen into the receiving cavity. The material boxes are provided in multiple ways, and the multiple material boxes are arranged side by side at intervals along the height direction of the receiving cavity, forming a reaction space between two adjacent material boxes; a partition is provided inside the material box, and the partition divides the material box into multiple storage spaces; A receiving space is formed between one end of the material box and the first side wall of the receiving cavity, and the receiving space is connected to the reaction space and the vent hole respectively; the other end of the material box is closed to the second side wall of the receiving cavity, and the other end of the material box forms a vent hole that connects to the reaction space, and the vent hole is inclined from the outer side wall of the material box toward the bottom wall of the storage space.
2. The silicon carbide powder decarburization device according to claim 1, characterized in that, The partitions are evenly spaced along the extension direction of the material box.
3. The silicon carbide powder decarburization device according to claim 1, characterized in that, The receiving cavity has a first protrusion formed on the side wall on both sides of the material box. The first protrusion extends along the setting direction of the material box, and a track groove is formed along the extending direction of the first protrusion. The bottom wall of the material box has a second protrusion that matches the track groove.
4. The silicon carbide powder decarburization device according to claim 1, characterized in that, The partition sidewall has a slot, and the material box sidewall has a buckle that matches the slot. Alternatively, the partition sidewall has a snap fastener, and the material box sidewall has a slot that matches the snap fastener.
5. A silicon carbide powder decarburization device according to any one of claims 1-4, characterized in that, The height of the partition is the same as the height of the end wall of the material box.
6. A silicon carbide powder decarburization device according to any one of claims 1-4, characterized in that, Both the housing and the material box are made of quartz.
7. A silicon carbide powder decarburization device according to any one of claims 1-4, characterized in that, The bottom of the housing is equipped with casters.