Base plate improvement device based on wafer sputtering

Abstract

The utility model discloses a base plate improvement device based on wafer sputtering, which comprises an adapter body and a target piece, a cavity is formed in the middle of the adapter body, a first through hole penetrates through the upper end face of the adapter body, and a second through hole penetrates through the front of the adapter body. The first through hole and the second through hole are concentrically arranged, the target piece blocks the rear end face of the first through hole, the front end face of the target piece extends into the middle cavity of the adapter body, and the front end face where the second through hole is located is blocked through a wafer to be sputtered; a third through hole penetrates through the lower end face where the adapter body is located, and the interior of the cavity is vacuumized through the third through hole. And negative pressure is formed in the cavity. According to the device, the adapter body is provided with the first through hole and the second through hole, the first through hole and the second through hole are concentrically arranged, and the inner diameter of the first through hole is larger than that of the second through hole, so that the wafer can be uniformly sputtered on the second through hole.

Description

Technical Field

[0001] This utility model belongs to the technical field of wafer processing equipment, specifically relating to an improved base plate device based on wafer sputtering. Background Technology

[0002] In semiconductor manufacturing, the sputtering target is a key component in magnetron sputtering. Sputtering is an important thin film preparation technique used to deposit various materials on wafers. The sputtering target plays a crucial role in the sputtering process, not only ensuring proper sputtering of the wafer but also maintaining stable output and continuous power output during sputtering.

[0003] Magnetron sputtering is a process that uses a high voltage applied between a target and a substrate under vacuum conditions to ionize argon gas and generate plasma. Electrons collide with argon atoms under the influence of electric and magnetic fields, causing them to ionize. The resulting positive ions are accelerated by the electric field and bombard the target, causing atoms or molecules on the target surface to be ejected, ultimately forming a thin film on the substrate.

[0004] Currently, in practice, batch sputtering of wafers requires numerous sputtering operations. Over time, the target material is continuously consumed. During this consumption process, atoms or molecules on the target surface cannot be completely deposited onto the substrate. Some of these atoms or molecules end up on the shielding and substrate, resulting in excessive ion deposition on the substrate. This can cause the substrate and target to connect, leading to a short circuit in the power supply. Utility Model Content

[0005] In view of the shortcomings of the prior art, the purpose of this utility model is to provide an improved base plate device based on wafer sputtering, which solves the above-mentioned technical problems existing in the prior art.

[0006] The objective of this utility model can be achieved through the following technical solutions:

[0007] An improved substrate device based on wafer sputtering includes an adapter body and a target component.

[0008] The adapter body has a cavity in the middle, and a first through hole is formed through the upper end face of the adapter body. At the same time, a second through hole is formed through the front part of the adapter body. The first through hole and the second through hole are concentric. The target material forms a seal on the rear end face of the first through hole, and the front end face of the target material extends into the cavity in the middle of the adapter body. The front end face of the second through hole is sealed by the wafer to be sputtered.

[0009] The lower end face of the adapter body has a third through hole, through which a vacuum is drawn into the cavity, creating a negative pressure inside the cavity.

[0010] Furthermore, a support is formed on the rear end face where the target material is located, and the outer edge of the support extends outward to form an annular ear.

[0011] Furthermore, an annular groove is provided on the outer periphery of the rear end face where the first through hole is located, and a sealing gasket is provided on the upper part of the annular groove, so that the sealing gasket is embedded in the annular groove and is pressed and fixed above the sealing gasket by the annular lug of the bearing seat.

[0012] Furthermore, a cooling ring is provided on the front end face where the second through hole is located, and the cooling ring forms a cooling effect on the outer periphery of the second through hole where the wafer to be sputtered is located.

[0013] Furthermore, the cooling ring is a circulating water ring.

[0014] Furthermore, the negative pressure formed within the cavity is 5 × 10⁻⁶. -8 ~5×10 -7 MPa.

[0015] Furthermore, the inner diameter of the first through hole is larger than the inner diameter of the second through hole.

[0016] Furthermore, a gap is formed between the target material disposed on the front end face where the first through hole is located and the wafer to be sputtered on the second through hole.

[0017] The beneficial effects of this utility model are:

[0018] 1. The adapter body of this device is designed with a first through hole and a second through hole, which are concentrically set, and the inner diameter of the first through hole is larger than that of the second through hole. This design helps the wafer to be sputtered uniformly on the second through hole.

[0019] 2. The target material used in this device seals the rear end face of the first through hole and fits tightly with the adapter body. The seal is achieved through the annular groove and the sealing gasket. The annular lug of the bearing seat is used to press and fix the sealing gasket, which enhances the sealing between the target material and the adapter body 1 and ensures the vacuum environment during the sputtering process.

[0020] 3. This device uses a vacuum pump to create a negative pressure environment in the cavity through the third through hole, which is beneficial to the sputtering process. At this time, the cooling ring is used to reduce the temperature of the wafer to be sputtered and prevent high temperature from affecting it. Attached Figure Description

[0021] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the accompanying drawings used in the description of the embodiments or the prior art will be briefly introduced below.

[0022] Figure 1This is a schematic diagram of the overall structure of an embodiment of the present utility model;

[0023] Figure 2 This is a schematic diagram of the target material structure according to an embodiment of the present invention;

[0024] Figure 3 This is a schematic diagram of the adapter body structure according to an embodiment of the present utility model;

[0025] Figure 4 This is a schematic cross-sectional view of an embodiment of the present utility model;

[0026] Figure 5 This is an embodiment of the present utility model. Figure 4 A partial structural diagram at point A in the middle;

[0027] Figure 6 This is a schematic diagram of the support structure of an embodiment of the present utility model. Detailed Implementation

[0028] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present utility model without creative effort are within the scope of protection of the present utility model.

[0029] like Figure 1 , Figure 2 As shown, this utility model embodiment provides an improved base plate device based on wafer sputtering, including an adapter body 1 and a target material 2;

[0030] like Figure 3 As shown, a cavity 101 is formed in the middle of the adapter body 1, and a first through hole 102 is formed through the upper end face of the adapter body 1. A second through hole 103 is formed through the front of the adapter body 1, and the first through hole 102 and the second through hole 103 are concentrically arranged. The inner diameter of the first through hole 102 is larger than the inner diameter of the second through hole 103, facilitating the cavity 101. This allows the wafer to be sputtered on the second through hole 103 to be uniformly sputtered, improving sputtering efficiency. The target material 2 forms a seal on the rear end face of the first through hole 102; that is, a support 21 (e.g., a bearing seat 21) is formed on the rear end face of the target material 2. Figure 6As shown), the outer edge of the support 21 extends outward to form an annular lug 211. An annular groove 1021 is provided on the annular outer periphery of the rear end face where the first through hole 102 is located. At the same time, a sealing gasket 1022 is provided on the upper part of the annular groove 1021, so that the sealing gasket 1022 is embedded in the annular groove 1021, and is pressed and fixed above the sealing gasket 1022 by the annular lug 211 of the support 21. This installation method can make the target material 2 and the first through hole 102 of the adapter body 1 fit tightly together.

[0031] A target is set on the target 2, and the front end face of the target 2 extends into the middle cavity 101 of the adapter body 1. The front end face where the second through hole 103 is located is blocked by the cover of the wafer to be sputtered.

[0032] like Figure 4 , Figure 5 As shown, a third through hole 104 penetrates the lower end face of the adapter body 1, through which a vacuum is drawn into the cavity 101; at this time, a negative pressure is formed in the middle cavity 101 where the adapter body 1 is located (the negative pressure formed in the cavity 101 is 5×10). -8 ~5×10 -7 A cooling ring 1031 is located on the front face of the second through-hole 103 (MPa). The cooling ring 1031 cools the outer periphery of the second through-hole 103 where the wafer to be sputtered is located, ensuring that the wafer is not affected by excessively high temperatures during the entire sputtering process. The cooling ring 1031 can be a circulating water system. In actual operation, the cathode is the target material, and the cavity is the anode. This is also called the coating chamber wall magnetron sputtering principle, which utilizes the combined action of electric and magnetic fields to generate ions that bombard the target material through collisions between electrons and argon atoms, achieving a high-speed, low-temperature thin film deposition process. The cavity's functions include providing a vacuum environment, controlling gas flow, and supporting the target material. Magnetron sputtering requires a high vacuum environment to reduce interference from gas molecules. The cavity, connected to a molecular pump and a mechanical pump, can reduce the internal gas pressure to the required high vacuum state.

[0033] A gap is formed between the target material 2 on the front end face where the first through hole 102 is located and the wafer to be sputtered on the second through hole 103. In this way, even in a high-temperature negative pressure environment, the wafer will not be damaged by breakdown.

[0034] The foregoing has shown and described the basic principles, main features, and advantages of this utility model. Those skilled in the art should understand that this utility model is not limited to the above embodiments. The embodiments and descriptions in the specification are merely illustrative of the principles of this utility model. Various changes and modifications can be made to this utility model without departing from its spirit and scope, and all such changes and modifications fall within the scope of the claimed utility model.

Claims

1. An improved substrate device based on wafer sputtering, comprising an adapter body (1) and a target material (2), characterized in that, The adapter body (1) forms a cavity (101) in the middle, and a first through hole (102) is formed through the upper end face of the adapter body (1). At the same time, a second through hole (103) is formed through the front part of the adapter body (1). The first through hole (102) and the second through hole (103) are concentrically arranged. The target material (2) forms a seal on the rear end face of the first through hole (102), and the front end face of the target material (2) extends into the middle cavity (101) of the adapter body (1). The front end face of the second through hole (103) is sealed by the wafer to be sputtered. The lower end face of the adapter body (1) has a third through hole (104) through which a vacuum is drawn into the cavity (101) through the third through hole (104), thereby creating a negative pressure inside the cavity (101).

2. The improved substrate device based on wafer sputtering according to claim 1, characterized in that, A support seat (21) is formed on the rear end face of the target material (2), and the outer edge of the support seat (21) extends outward to form an annular ear (211).

3. The improved substrate device based on wafer sputtering according to claim 2, characterized in that, An annular groove (1021) is provided on the outer periphery of the rear end face where the first through hole (102) is located. At the same time, a sealing gasket (1022) is provided on the upper part of the annular groove (1021), so that the sealing gasket (1022) is embedded in the annular groove (1021) and is pressed and fixed above the sealing gasket (1022) by the annular lug (211) of the bearing seat (21).

4. The improved substrate device based on wafer sputtering according to claim 1, characterized in that, A cooling ring (1031) is provided on the front end face where the second through hole (103) is located, and the cooling ring (1031) forms a cooling effect on the outer periphery of the second through hole (103) where the wafer to be sputtered is located.

5. The improved substrate device based on wafer sputtering according to claim 4, characterized in that, The cooling ring (1031) is for circulating water.

6. The improved substrate device based on wafer sputtering according to claim 1, characterized in that, The negative pressure formed inside the cavity (101) is 5×10 -8 ~5×10 -7 MPa.

7. The improved substrate device based on wafer sputtering according to claim 1, characterized in that, The inner diameter of the first through hole (102) is larger than the inner diameter of the second through hole (103).

8. The improved substrate device based on wafer sputtering according to claim 1, characterized in that, A gap is formed between the target material (2) provided on the front end face where the first through hole (102) is located and the wafer to be sputtered on the second through hole (103).

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