Ion implantation equipment and ion implantation device

Abstract

The utility model provides ion implantation equipment and an ion implantation device, relates to the technical field of semiconductor manufacturing, and aims to solve the problem of low productivity of the ion implantation equipment. The ion implantation device comprises a first ion implanter, a second ion implanter, a first connection channel and a first transmission mechanism. The first ion implanter has a first chamber. The second ion implanter has a second chamber. The first connecting channel is provided with a third cavity; the third chamber is communicated with the first chamber and is communicated with the second chamber. The conveying range of the first conveying mechanism covers at least part of the first cavity, at least part of the second cavity and the third cavity. The ion implantation equipment is applied to manufacturing of semiconductor materials so as to realize doping of the semiconductor materials.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor manufacturing technology, and in particular to an ion implantation device or apparatus. Background Technology

[0002] Ion implantation is a method of adding a certain number and type of impurities into a solid material to change its properties (such as electrical properties), and it can be used for doping semiconductor materials. Compared with other doping methods for semiconductor materials, ion implantation allows for more precise control over the number and distribution of the introduced impurities.

[0003] In related technologies, ion implantation of semiconductor materials is achieved through multi-pass ion implantation. However, ion implantation equipment takes a long time to perform other operations besides ion implantation, resulting in lower throughput. Utility Model Content

[0004] The embodiments of this disclosure provide an ion implantation device and an ion implantation apparatus, which aim to solve the problem of low productivity of ion implantation devices.

[0005] To achieve the above objectives, the embodiments of this disclosure adopt the following technical solutions:

[0006] On one hand, an ion implantation apparatus is provided. The ion implantation apparatus includes a first ion implanter, a second ion implanter, a first connecting channel, and a first conveying mechanism. The first ion implanter has a first chamber. The second ion implanter has a second chamber. The first connecting channel has a third chamber; the third chamber communicates with the first chamber and also with the second chamber. The conveying range of the first conveying mechanism covers at least a portion of the first chamber, at least a portion of the second chamber, and the third chamber.

[0007] The ion implantation apparatus provided in the above embodiments of this disclosure has a third chamber connected to both the first and second chambers. A first connecting channel allows the first and second ion implanters to be connected in series, enabling the implanted part to be transferred between the first, second, and third chambers. Furthermore, a first conveying mechanism facilitates the transfer of the implanted part between the first and second chambers. Specifically, the first conveying mechanism can be used to transfer the implanted part, ion-implanted by the first ion implanter, via the third chamber to the second chamber for ion implantation within the second ion implanter. This reduces the time required to transfer the implanted part from the first to the second ion implanter, thereby reducing the time required for the ion implantation apparatus to perform the transfer operation and improving the efficiency and throughput of the ion implantation apparatus.

[0008] Furthermore, when the first and second ion implanters are ion implanters for hot implantation, the above-mentioned configuration can reduce heat loss during the transfer process, shorten the preheating time of the second ion implantation in the two ion implantation processes corresponding to the first and second ion implanters, reduce repeated heating time, reduce the time required for the ion implantation equipment to perform heating operations, reduce the effective processing time of a single implanted part, and improve the efficiency and capacity of the ion implantation equipment.

[0009] In some embodiments, the first conveying mechanism includes a fixed part and a moving part. The fixed part is fixed to the inner wall of the third chamber. One end of the moving part is connected to the fixed part, and the other end of the moving part can extend into the first chamber and also into the second chamber.

[0010] In some embodiments, the first transfer mechanism includes a first robotic arm. The first robotic arm includes a fixed base, a movable arm, and a carrier. The fixed base is fixed to one of a first ion implanter, a second ion implanter, and a first connection channel. The fixed base is connected to one end of the movable arm; the carrier is connected to the other end of the movable arm. The carrier can extend into a first chamber and also into a second chamber.

[0011] In some embodiments, the heat resistance temperature of the carrier is greater than or equal to a preset threshold.

[0012] In some embodiments, the preset threshold is greater than or equal to 1000°C.

[0013] In some embodiments, the support element is a ceramic component.

[0014] In some embodiments, the carrier includes a first surface and a second surface disposed opposite to each other along its thickness direction, the second surface being further away from the bottom of the first connecting channel than the first surface. A groove is formed on the second surface of the carrier for receiving the injected component carried by the carrier.

[0015] In some embodiments, the groove extends through the carrier in a first direction, which is perpendicular to the thickness direction of the carrier and the extension direction of the carrier.

[0016] In some embodiments, the groove includes: a first groove wall and a second groove wall disposed opposite to each other along the extension direction of the carrier. Each of the first groove wall and the second groove wall includes an arcuate groove wall; the arcuate groove wall of the first groove wall and the arcuate groove wall of the second groove wall protrude toward each other in a direction away from each other.

[0017] In some embodiments, the ratio of the groove depth to the thickness of the support member is greater than or equal to 0.05 and less than or equal to 0.55.

[0018] In some embodiments, each of the first and second ion implanters includes a target stage and at least one transfer stage. The target stage is used for at least ion implantation. The transfer stage is configured to heat the implanted part when it is transferred to the transfer stage. The transfer range of the first transfer mechanism covers at least one of the target stage and at least one transfer stage of the first ion implanter, and also covers at least one of the target stage and at least one transfer stage of the second ion implanter.

[0019] In some embodiments, the transmission range of the first transmission mechanism covers at least one relay station of the first ion implanter and also covers at least one relay station of the second ion implanter.

[0020] On the other hand, an ion implantation apparatus is provided. The ion implantation apparatus includes an ion implantation device and a controller. The ion implantation device includes the aforementioned ion implantation device. The controller is coupled to a first ion implanter and a second ion implanter, and also coupled to a first conveying mechanism.

[0021] It is understood that the beneficial effects of the ion implantation apparatus provided in the above embodiments of this disclosure can be referred to the beneficial effects of the ion implantation equipment described above, and will not be repeated here. Attached Figure Description

[0022] To more clearly illustrate the technical solutions in this disclosure, the accompanying drawings used in some embodiments of this disclosure will be briefly described below.

[0023] Figure 1 This is a top view schematic diagram of an ion implantation apparatus according to some embodiments of the present disclosure;

[0024] Figure 2 This is a schematic diagram of the structure of a carrier according to some embodiments of the present disclosure;

[0025] Figure 3 This is a schematic diagram of the structure of a carrier according to some embodiments of the present disclosure;

[0026] Figure 4 This is a schematic diagram of the structure of an ion implantation apparatus according to some embodiments of the present disclosure. Detailed Implementation

[0027] The technical solutions in some embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this disclosure, and not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments provided in this disclosure are within the scope of protection of this disclosure.

[0028] In the description of this disclosure, it should be understood that the terms "center," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicating orientation or positional relationships based on the orientation or positional relationships shown in the accompanying drawings, are used only for the convenience of describing this disclosure and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this disclosure. It should be understood that these directional terms are relative concepts, used for relative description and clarification, and can change accordingly depending on the orientation of the components placed in the accompanying drawings.

[0029] Unless the context otherwise requires, throughout the specification and claims, the term "comprising" is interpreted as open-ended and encompassing, meaning "including, but not limited to." In the description of the specification, terms such as "one embodiment," "some embodiments," "exemplary embodiment," "exemplary," or "some examples," etc., are intended to indicate that a particular feature, structure, material, or characteristic associated with that embodiment or example is included in at least one embodiment or example of this disclosure. The illustrative representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics mentioned may be included in any suitable manner in any one or more embodiments or examples.

[0030] Hereinafter, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number and order of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of embodiments of this disclosure, unless otherwise stated, "a plurality of" means two or more.

[0031] In describing some embodiments, the terms "coupled" and "connected," and their derivative expressions, may be used. For example, the term "connected" may be used in describing some embodiments to indicate that two or more components have direct physical or electrical contact with each other. Similarly, the term "coupled" may be used in describing some embodiments to indicate that two or more components have direct physical or electrical contact. However, the term "coupled" may also refer to two or more components that do not have direct contact with each other but still cooperate or interact with each other. The embodiments disclosed herein are not necessarily limited to the content of this document.

[0032] "At least one of A, B, and C" has the same meaning as "at least one of A, B, or C," both including the following combinations of A, B, and C: only A, only B, only C, combinations of A and B, combinations of A and C, combinations of B and C, and combinations of A, B, and C. Unless otherwise defined, "at least one" means one or more, and "more than one" means two or more.

[0033] "A and / or B" includes the following three combinations: A only, B only, and a combination of A and B. A and B can be singular or plural.

[0034] The use of “applies to” or “configured to” in this article implies an open and inclusive language that does not preclude applicability to or configuration to devices that perform additional tasks or steps.

[0035] As used herein, “about,” “approximately,” or “approximately” includes the stated value and the average value within an acceptable range of deviation from the given value, wherein the acceptable range of deviation is determined by a person skilled in the art taking into account the measurement under discussion and the error associated with the measurement of the given quantity (i.e., the limitations of the measurement system).

[0036] In this disclosure, the meanings of “on,” “above,” and “above” should be interpreted in the broadest possible sense, such that “on” means not only “directly on” something, but also includes “on” something with intermediate features or layers in between, and “above” or “above” means not only “above” or “above” something, but also “above” or “above” something without intermediate features or layers in between (i.e., directly on something).

[0037] This document describes exemplary embodiments with reference to cross-sectional views and / or plan views, which are idealized exemplary drawings. In the drawings, the thickness of layers and regions is enlarged for clarity. Therefore, variations in shape relative to the drawings are contemplated due to, for example, manufacturing techniques and / or tolerances. Thus, exemplary embodiments should not be construed as limited to the shapes of the regions shown herein, but rather include shape deviations due to, for example, manufacturing processes. For example, etched regions shown as rectangular would typically have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to show the actual shapes of the regions of the device, nor are they intended to limit the scope of the exemplary embodiments.

[0038] The technical terms used in the embodiments of this application are explained below:

[0039] Semiconductors: Semiconductors are materials whose conductivity at room temperature falls between that of conductors and insulators. Semiconductors include intrinsic semiconductors and impurity semiconductors. A pure semiconductor, free of impurities and defects, has an equal concentration of electrons and holes and is called an intrinsic semiconductor. A semiconductor doped with a certain amount of impurities is called an impurity semiconductor or an intrinsic semiconductor. When the impurities in an impurity semiconductor can provide a certain concentration of charge carriers (such as holes or electrons), the conductivity of the intrinsic semiconductor can be improved. Generally, the higher the charge carrier concentration, the lower the resistivity and the better the conductivity of the semiconductor.

[0040] It should be noted that the labels "A~B" in the attached diagram indicate that structure / region A belongs to structure / region B. That is, the structure / region referred to by the label is both structure / region A and structure / region B. For example, Figure 2 In the diagram, "403b~403" refers to the structure indicated by this designation, which is the second surface 403b, belonging to the load-bearing component 403. The "A / B" designations in the attached drawings indicate that structure / region A and structure / region B can be referred to as the same structure / region, for example... Figure 1 The term "10A / A" refers to both the target stage A and the target stage 10A of the first ion implanter, which can be represented by this structure.

[0041] Ion implantation is a common method for doping semiconductor materials (such as intrinsic or extrinsic semiconductors). During ion implantation, an ion beam strikes the semiconductor material, where it is slowed down by the material's resistance and remains embedded, thus achieving doping. Ion implantation can improve the performance of semiconductor materials. Ion implantation is typically performed using an ion implantation apparatus, usually by placing a wafer on the target stage of the ion implanter.

[0042] Here, the semiconductor material used for ion implantation is, for example, silicon carbide (SiC). Silicon carbide possesses characteristics such as a wide bandgap, high breakdown field, high electron saturation drift velocity, and high thermal conductivity, making it a commonly used semiconductor material in high-temperature, high-power, and high-frequency devices. However, pure silicon carbide has poor electrical conductivity. Therefore, in the silicon carbide wafer manufacturing process, doping processes are introduced into the active region, substrate, and gate to increase conductivity. Doping types include, for example, N-type doping and / or P-type doping. In N-type doping, the atoms doped can be nitrogen (N) or phosphorus (P), etc.; in P-type doping, the atoms doped can be aluminum (Al) or boron (B), etc.

[0043] In some examples, ion implantation of semiconductor materials involves multiple ion implantations, with the ion implantation equipment comprising multiple ion implanters, each performing one ion implantation pass. Therefore, the operations performed by the ion implantation equipment include ion implantation, transfer, and heating. However, in the ion implantation process for semiconductor materials, the time spent by the ion implantation equipment performing operations other than ion implantation is relatively long, resulting in lower throughput.

[0044] For example, in the ion implantation process of semiconductor materials, the wafer to be implanted is transferred between multiple ion implanters. Specifically, the wafer processed by the previous ion implanter is taken out from the previous ion implanter and then transferred to the next ion implanter. This transfer process takes a long time, resulting in low throughput of the ion implantation equipment.

[0045] For example, to reduce the damage to the wafer lattice caused by ion bombardment during ion implantation, some doping processes involve ion implantation at high temperatures (also known as thermal implantation). For instance, silicon carbide wafers are heated to approximately 500°C before ion implantation. This means that before each ion implantation pass, the wafer is heated to a preset temperature, resulting in a relatively high proportion of heating time in the total doping process time, leading to a decrease in the capacity of the ion implantation equipment. In some cases, the heating time accounts for more than half of the total doping process time, causing the capacity of medium-current ion implantation equipment to drop from 2500 wafers / day to 1000 wafers / day, a significant decrease in overall ion implantation capacity.

[0046] In some examples, the wafer is fed into the ion implanter, preheated on the target stage for 56 seconds, and then ion implantation begins. This 56-second heating time constitutes a relatively high proportion of the total doping process time, resulting in low production efficiency for the ion implantation equipment. In other examples, the wafer is fed into the ion implanter, preheated on the preheating mechanism for 20 seconds until it reaches 300°C, then transferred to the target stage for another 25 seconds of preheating before ion implantation begins. In these examples, the preheating process on the preheating mechanism can be synchronized with the implantation process of the previous wafer, so the preheating time is not included in the wafer's heating time. This setup improves the efficiency of the ion implantation equipment compared to the case without a preheating mechanism, but the efficiency remains low.

[0047] Based on this, some embodiments of this disclosure provide an ion implantation device 100 to solve the problem of low capacity of ion implantation devices. Figure 1 This is a top view schematic diagram of an ion implantation device 100 in some embodiments of this disclosure. For example... Figure 1 As shown, the ion implantation apparatus 100 includes a first ion implanter 10, a second ion implanter 20, a first connecting channel 30, and a first conveying mechanism 40. The first ion implanter 10 has a first chamber 11. The second ion implanter 20 has a second chamber 21. The first connecting channel 30 has a third chamber 31; the third chamber 31 communicates with the first chamber 11 and with the second chamber 21. The conveying range of the first conveying mechanism 40 covers at least a portion of the first chamber 11, at least a portion of the second chamber 21, and the third chamber 31.

[0048] In some examples, both the first ion implanter 10 and the second ion implanter 20 are ion implanters for hot implantation. In still other examples, both the first ion implanter 10 and the second ion implanter 20 are ion implanters for cold implantation.

[0049] In some examples, the first ion implanter 10 and the second ion implanter 20 implant the same ions. In still other examples, the first ion implanter 10 and the second ion implanter 20 implant different ions.

[0050] In some examples, the first chamber 11, the second chamber 21, and the third chamber 31 are all vacuum chambers. Exemplarily, the vacuum level of the first chamber 11, the second chamber 21, and the third chamber 31 is 1 × 10⁻⁶. -5 Torr.

[0051] For example, the absolute value of the difference in vacuum level between the third chamber 31 and the first chamber 11 is less than or equal to 1 × 10⁻⁶. -7 Torr. For example, the absolute value of the difference in vacuum level between the third chamber 31 and the second chamber 21 is less than or equal to 1 × 10⁻⁶. -7 Torr.

[0052] It should be understood that in the embodiments of this disclosure, the ion implantation device 100 may also include other ion implanters besides the first ion implanter 10 and the second ion implanter 20, and may also include other connection channels besides the first connection channel 30, and other transmission mechanisms besides the first transmission mechanism 40.

[0053] For example, the ion implantation apparatus 100 further includes a third ion implanter, a second connecting channel, and a second conveying mechanism (not shown in the figure). The third ion implanter has a fourth chamber, and the second connecting channel has a fifth chamber. The fifth chamber communicates with the second chamber 21 and the fourth chamber. The conveying range of the second conveying mechanism covers at least a portion of the second chamber 21, at least a portion of the fourth chamber, and the fifth chamber. With this configuration, the third ion implanter and the second ion implanter can be connected in series via the second connecting channel.

[0054] In some examples, the number of ion implanters included in the ion implantation equipment 100, as well as the number of connection channels, can be determined based on the number of ion implantation passes in the semiconductor material doping process.

[0055] It should be noted that the terms "first" and "second" in "first ion implanter 10" and "second ion implanter 20" are relative concepts and are used only for descriptive purposes to make the relative positional relationship of two adjacent ion implanters clearer. In practical applications, the first ion implanter 10 and the second ion implanter 20 can be any two adjacent ion implanters in the ion implantation equipment 100. Moreover, depending on the position of the other ion implanter and / or the order of ion implantation channels, a certain ion implanter may be either the first ion implanter 10 or the second ion implanter 20.

[0056] Here, the transmission range of the first transmission mechanism 40 refers to the range of the area that the first transmission mechanism 40 can reach. It can also be understood as the range of the area that the first transmission mechanism 40 can reach, including the area where the injected component K (see [reference]). Figure 2 The range to which the material is taken out or transported (e.g., a silicon carbide wafer) is located. The transport range of the first transport mechanism 40 covers at least a portion of the first chamber 11, meaning that the area reachable by the first transport mechanism 40 at least partially overlaps with the area where the first chamber 11 is located. Therefore, when the transport range of the first transport mechanism 40 covers at least a portion of the first chamber 11, the first transport mechanism 40 can remove the injected component K from the first chamber 11, and / or, the first transport mechanism 40 can transport the injected component K into the first chamber 11. For an understanding of the first transport mechanism 40 covering at least a portion of the second chamber 21 and the third chamber 31, please refer to the above content, which will not be repeated here.

[0057] When the transmission range of the first transmission mechanism 40 covers at least a portion of the first chamber 11, at least a portion of the second chamber 21, and the third chamber 31, the first transmission mechanism 40 can be configured to transmit the injectable component K from one of the first chamber 11 and the second chamber 21, via the third chamber 31, to the other of the first chamber 11 and the second chamber 21; in other words, the first transmission mechanism 40 is capable of transmitting the injectable component K between the first chamber 11 and the second chamber 21.

[0058] Understandably, when the third chamber 31 is connected to the first chamber 11 and the second chamber 21, the first ion implanter 10 and the second ion implanter 20 can be connected in series using the first connecting channel 30, allowing the implanted part K to be transferred between the first chamber 11, the second chamber 21, and the third chamber 31. When the first conveying mechanism 40 can transfer the implanted part K between the first chamber 11 and the second chamber 21, the first conveying mechanism 40 can be used to transfer the implanted part K, which has been ion-implanted by the first ion implanter 10, to the second chamber 21 via the third chamber 31, where it will be ion-implanted in the second ion implanter 20. This reduces the time required for the implanted part K to be transferred from the first ion implanter 10 to the second ion implanter 20, thus reducing the time required for the ion implantation equipment 100 to perform the transfer operation and improving the efficiency and capacity of the ion implantation equipment 100.

[0059] Furthermore, when the first ion implanter 10 and the second ion implanter 20 are ion implanters for hot implantation, the above-described configuration can reduce heat loss during the transfer process, shorten the preheating time of the second ion implantation in the two ion implantation processes corresponding to the first ion implanter 10 and the second ion implanter 20, reduce repeated heating time, reduce the time required for the ion implantation equipment 100 to perform heating operations, reduce the effective processing time of a single implanted part K, and improve the efficiency and capacity of the ion implantation equipment 100.

[0060] In some embodiments, the ion implantation device 100 includes a plurality of ion implanters, and a conveying mechanism is provided between any two adjacent ion implanters. The conveying mechanism can convey the implanted part K to the chamber of the next ion implanter at a relatively fast speed, so that the implanted part K can maintain a high temperature during the process of being conveyed between two adjacent ion implanters. In this way, the implanted part K is heated once in the first ion implanter, and multiple ion implantations can be completed continuously.

[0061] In some examples, such as Figure 1 As shown, each of the first ion implanter 10 and the second ion implanter 20 includes a mounting stage G. The target stage A of the ion implanter is mounted on the mounting stage G.

[0062] In some embodiments, such as Figure 1 As shown, the first conveying mechanism 40 includes a fixed part 41 and a moving part 42. The fixed part 41 is fixed to the inner wall of the third chamber 31. One end of the moving part 42 is connected to the fixed part 41, and the other end of the moving part 42 can extend into the first chamber 11 and also into the second chamber 21.

[0063] Here, the fixed part 41 of the first conveying mechanism 40 can be understood as the part whose position does not change during the operation of the first conveying mechanism 40; or it can be understood as the part of the first conveying mechanism 40 that is relatively stationary with respect to the fixed part of the ion implantation device 100, wherein the fixed part of the ion implantation device 100 is, for example, the mounting stage 10G of the first ion implanter 10, the mounting stage 20G of the second ion implanter 20, or the first connecting channel 30.

[0064] In some examples, such as Figure 1 As shown, the fixing part 41 is fixed to the inner wall of the middle part of the third chamber 31.

[0065] Here, there are no restrictions on the method of fixing the fixing part 41 to the inner wall of the third chamber 31. For example, the fixing part 41 can be fixed to the inner wall of the third chamber 31 by bolts or clips.

[0066] When one end of the moving part 42 is connected to the fixing part 41, the fixing part 41 can provide support for the moving part 42. When the other end of the moving part 42 can extend into the first chamber 11 and also into the second chamber 21, the injected member K (see...) Figure 2 It can be carried by the other end of the moving part 42 in the first chamber 11 or the second chamber 21, and then transported by the first transmission mechanism 40.

[0067] When the fixing part 41 is fixed to the inner wall of the third chamber 31, on the one hand, compared to the case where the fixing part 41 is fixed to other positions of the ion implantation equipment 100 (e.g., mounting stage 10G or mounting stage 20G), the fixing part 41 can avoid occupying the space of the first ion implanter 10 or the second ion implanter 20, which is beneficial to the space optimization of the ion implantation equipment 100; on the other hand, the distance between the fixing part 41 and the first chamber 11 and the distance between the fixing part 41 and the second chamber 21 can be relatively consistent. In this way, even with a relatively short length of the moving part 42 of the first conveying mechanism 40, the first conveying mechanism 40 can realize the function of conveying the implanted part K between the first chamber 11 and the second chamber 21, which is beneficial to the simplification of the structure of the first conveying mechanism 40.

[0068] It should be noted that the present invention does not limit the method by which the first conveying mechanism 40 implements the conveying, as long as it can realize the function of conveying the injected component K between the first chamber 11 and the second chamber 21.

[0069] In some embodiments, such as Figure 1 and Figure 2 As shown, the first conveying mechanism 40 includes a first robotic arm 40X. The first robotic arm 40X includes a fixed base 401, a moving arm 402, and a carrier 403. The fixed base 401 is fixed to one of the first ion implanter 10, the second ion implanter 20, and the first connecting channel 30. The fixed base 401 is connected to one end of the moving arm 402; the carrier 403 is connected to the other end of the moving arm 402. The carrier 403 can extend into the first chamber 11 and also into the second chamber 21.

[0070] The fixed base 401 is the part of the first robotic arm 40X that performs the support function. When the first transmission mechanism 40 includes a fixed part 41, the fixed base 401 forms at least part of the fixed part 41. In this case, the fixed base 401 can be fixed to the inner wall of the third chamber 31, that is, fixed to the first connecting channel 30.

[0071] The motion arm 402 is the part of the first robotic arm 40X that performs the motion function. The carrier 403 is the part of the first robotic arm 40X that performs the carrying function and can be used to carry the implanted part K, such as a silicon carbide wafer. When the first transfer mechanism 40 includes a motion part 42, the motion arm 402 and the carrier 403 together form at least a portion of the motion part 42.

[0072] For example, the motion arm 402 can perform at least one of the following movements relative to the fixed base 401: telescopic movement, rotational movement, and lifting movement. In practical applications, the movement mode of the motion arm 402 relative to the fixed base 401 can be determined according to the movement trajectory of the first transmission mechanism 40, so as to realize the multi-degree-of-freedom movement of the first robotic arm 40X.

[0073] In some examples, such as Figure 1 As shown, the first robotic arm 40X is a multi-joint robotic arm.

[0074] Understandably, the first robotic arm 40X has advantages such as high precision, easy control, and strong operational flexibility. By setting the first conveying mechanism 40 including the first robotic arm 40X, the conveying precision of the first conveying mechanism 40 can be improved, as well as the controllability of the conveying speed and conveying time of the first conveying mechanism 40.

[0075] Figure 2 This is a schematic diagram of the structure of the carrier 403 in some embodiments of this disclosure. Figure 3This is a structural schematic diagram of the carrier 403 in some embodiments of this disclosure.

[0076] In some examples, the temperature of the injected component K is relatively high during its transfer between the first chamber 11 and the second chamber 21. The carrier 403, as the part of the first robotic arm 40X that carries the injected component K, will come into contact with the high-temperature injected component K.

[0077] Therefore, in some embodiments, such as Figure 2 As shown, the heat resistance temperature of the bearing 403 is greater than or equal to the preset threshold.

[0078] With this configuration, the heat resistance temperature of the carrier 403 is relatively high, and the heat resistance performance of the carrier 403 is good. This can reduce the impact of the high-temperature injected component K on the carrier 403, and to a certain extent improve the service life of the carrier 403 and the first robotic arm 40X.

[0079] In some embodiments, the preset threshold is greater than or equal to 500°C, such as 500°C, 600°C, 700°C, 800°C or 900°C, etc., and there is no limitation here.

[0080] In some embodiments, the preset threshold is greater than or equal to 1000°C.

[0081] For example, the preset threshold can be 1000℃, 1100℃, 1200℃, 1300℃, 1400℃, 1500℃, 1600℃ or 1700℃, etc., and there is no limit here.

[0082] When the preset threshold is greater than or equal to 1000℃, the heat resistance temperature of the carrier 403 is greater than or equal to 1000℃. The high heat resistance temperature of the carrier 403 can improve the heat resistance performance of the carrier 403, further reducing the impact of the high-temperature injected component K on the carrier 403, and greatly improving the service life of the carrier 403 and the first robotic arm 40X.

[0083] In some embodiments, such as Figure 2 As shown, the support component 403 is a ceramic component.

[0084] For example, the carrier 403 is a high-temperature resistant ceramic component.

[0085] Understandably, on the one hand, ceramic parts have the advantage of high heat resistance. When the carrier 403 is a ceramic part, its heat resistance is better. Thus, as mentioned above, the impact of the high-temperature implanted part K on the carrier 403 can be reduced. On the other hand, compared with other types of structural parts (such as metal parts), ceramic parts have the advantage of relatively low thermal conductivity. When the carrier 403 is a ceramic part, the heat transfer between the implanted part K and the carrier 403 can be reduced, and the heat loss of the implanted part K on the carrier 403 can be reduced. This results in a shorter preheating time for the second ion implantation in the two ion implantation processes corresponding to the first ion implanter 10 and the second ion implanter 20, thereby improving the efficiency and capacity of the ion implantation equipment 100.

[0086] As mentioned above, in some examples, the first chamber 11, the second chamber 21, and the third chamber 31 are vacuum chambers. In this case, the reliability of the first conveying mechanism 40 in carrying the injected component K is relatively low, and the injected component K is prone to sliding along a certain direction (e.g., the extension direction Y of the carrier 403), which makes the set speed of the first conveying mechanism 40 in conveying the injected component K relatively low.

[0087] Therefore, in some embodiments, such as Figure 2 and Figure 3 As shown, the carrier 403 includes a first surface 403a and a second surface 403b disposed opposite each other along its thickness direction Z. The second surface 403b is farther away from the first connecting channel 30 than the first surface 403a (see [reference]). Figure 1 The bottom of the support member 403. A groove 404 is provided on the second surface 403b of the support member 403. The groove 404 is used to accommodate the injection member K carried by the support member 403.

[0088] The bottom of the first connection channel 30 can be understood as the part of the first connection channel 30 that is closer to the mounting surface of the ion implantation device 100.

[0089] Here, there is no limitation on the extent to which the injected part K is accommodated in the groove 404. In some examples, the injected part K, carried by the carrier 403, is completely accommodated within the groove 404, in which case the groove depth H1 of the groove 404 is greater than or equal to the thickness of the injected part K; in still other examples, the bottom of the injected part K is accommodated within the groove 404, in which case the groove depth H1 of the groove 404 is less than the thickness of the injected part K.

[0090] The shape of the groove 404 is not limited in this embodiment, as long as it can accommodate the injected part K. For example, the shape of the groove 404 can be circular, rectangular, elliptical, or rhomboid, etc., and of course, the groove 404 can also be other shapes.

[0091] Through the above configuration, on the one hand, the bottom surface of the implanted part K can form surface contact with the bottom of the groove 404. This increases the contact area between the implanted part K and the conveying component compared to point contact in related technologies, thereby increasing the friction between the implanted part K and the groove 404 and improving the reliability of the carrier 403 in supporting the implanted part K. On the other hand, with the implanted part K in the groove 404, the groove 404 provides a limiting function, preventing the implanted part K from sliding and falling during transport, further improving the reliability of the carrier 403 in supporting the implanted part K. Moreover, with the improved reliability of the carrier 403 in supporting the implanted part K, the set conveying speed of the first robotic arm 40X can be faster, thus further shortening the conveying time and reducing heat loss of the implanted part K on the carrier 403, thereby improving the efficiency and capacity of the ion implantation equipment 100.

[0092] In some examples, when the carrier 403 has the groove 404, the transfer speed (e.g., vacuum transfer speed) of the first robotic arm 40X can be increased by 30% compared to when the carrier 403 does not have the groove 404.

[0093] In some implementations, the groove 404 does not penetrate the support member 403. In this case, the dimensions of the groove 404 and the support member 403 are relatively large in order to accommodate the injected part K.

[0094] In some embodiments, such as Figure 2 and Figure 3 As shown, the groove 404 penetrates the support member 403 along the first direction X, which is perpendicular to the thickness direction Z of the support member 403 and perpendicular to the extension direction Y of the support member 403.

[0095] When the groove 404 penetrates the carrier 403 along the first direction X, the edge portion of the injected part K along the first direction X may be located outside the carrier 403.

[0096] With this configuration, the dimension of the carrier 403 along the first direction X can be smaller than the dimension of the injected part K along the first direction X. This allows the carrier 403 to be relatively small in the first direction X. Thus, while ensuring the groove 404's containment and limiting effect on the injected part K, the size of the carrier 403 can be relatively small, simplifying the structure of the first robotic arm 40X and increasing the size of the motion arm 402 (see [reference]). Figure 1 ) Operational flexibility during movement.

[0097] In some embodiments, such as Figure 2As shown, the groove 404 includes a first groove wall 404a and a second groove wall 404b disposed opposite to each other along the extending direction Y of the support member 403. Each of the first groove wall 404a and the second groove wall 404b includes an arcuate groove wall; the arcuate groove wall of the first groove wall 404a and the arcuate groove wall of the second groove wall 404b protrude toward a mutually distant direction Y1.

[0098] Here, as Figure 2 As shown, the direction Y1 in which the arcuate groove wall of the first groove wall 404a and the arcuate groove wall of the second groove wall 404b move away from each other is parallel to the extension direction Y of the support member 403.

[0099] With the arcuate groove walls of the first groove wall 404a and the second groove wall 404b protruding in mutually distancing directions Y1, the groove 404 not only provides a limiting function for the injected part K in the extending direction Y of the support member 403, but also provides a limiting function for the injected part K in the first direction X, preventing the injected part K from sliding along these two directions. This further improves the reliability of the support member 403 in supporting the injected part K, allowing for a faster set transmission speed of the first robotic arm 40X. Moreover, when the injected part K (e.g., a silicon carbide wafer) is circular, the above arrangement results in a higher shape match between the groove 404 and the injected part K, further enhancing the groove 404's ability to accommodate and limit the injected part K.

[0100] In some embodiments, such as Figure 3 As shown, the ratio of the groove depth H1 of the groove 404 to the thickness H2 of the bearing member 403 is greater than or equal to 0.05 and less than or equal to 0.55.

[0101] For example, the ratio of the groove depth H1 of the groove 404 to the thickness H2 of the support member 403 can be 0.05, 0.067, 0.10, 0.15, 0.20, 0.25, 0.30, 0.35, 0.40, 0.45, 0.50, 0.53 or 0.55, etc., and there is no limitation here.

[0102] In some examples, the groove depth H1 of the groove 404 ranges from 0.2mm to 0.8mm, for example, 0.2mm, 0.3mm, 0.4mm, 0.5mm, 0.6mm, 0.7mm or 0.8mm, etc., and there is no limit here.

[0103] In some examples, the thickness H2 of the carrier 403 ranges from 1.5mm to 3.0mm, for example, 1.5mm, 1.7mm, 2.1mm, 2.3mm, 2.5mm, 2.7mm or 3.0mm, etc., and there is no limit here.

[0104] When the ratio of the groove depth H1 of the groove 404 to the thickness H2 of the support member 403 is small (e.g., less than 0.05), the groove depth H1 of the groove 404 is relatively small, which may affect the groove 404's ability to accommodate and limit the injected part K. When the ratio of the groove depth H1 of the groove 404 to the thickness H2 of the support member 403 is large (e.g., greater than 0.55), the groove depth H1 of the groove 404 is relatively large, which may affect the structural strength of the support member 403. Therefore, by setting the ratio of the groove depth H1 of the groove 404 to the thickness H2 of the support member 403 to be greater than or equal to 0.05 and less than or equal to 0.55, the groove depth H1 of the groove 404 can be within a suitable range, which can improve the groove 404's ability to accommodate and limit the injected part K while ensuring the structural strength of the support member 403.

[0105] In some embodiments, such as Figure 1 and Figure 2 As shown, each of the first ion implanter 10 and the second ion implanter 20 includes a target stage A and at least one transfer stage B. The target stage A is used for at least performing ion implantation. The transfer stage B is configured to heat the implanted part K when it is transferred to the transfer stage B.

[0106] In some examples, such as Figure 1 As shown, the target stage 10A and at least one transfer stage 10B of the first ion implanter 10 are both located in the first chamber 11, and / or the target stage 20A and at least one transfer stage 20B of the second ion implanter 20 are both located in the second chamber 21.

[0107] For example, such as Figure 1 As shown, when each of the first ion implanter 10 and the second ion implanter 20 includes a mounting stage G, the target stage A and at least one transfer stage B can be mounted on the mounting stage G. For example, the target stage 10A and at least one transfer stage 10B of the first ion implanter 10 can be mounted on the mounting stage 10G of the first ion implanter 10.

[0108] In some examples, an ion source is located on the side of the target stage A away from the mounting stage G, and the ion source is used to provide ions.

[0109] In some examples, either the target stage A or at least one transfer stage B is equipped with a heating mechanism for heating the injected part K. No restrictions are set regarding the structural form of the heating mechanism.

[0110] In some examples, each of the first ion implanter 10 and the second ion implanter 20 further includes a clamping mechanism C (e.g., a clamping mechanism C located on one side of the target stage A or the transfer stage B and mounted on the mounting stage G) Figure 1(The clamping mechanisms represented by 10C and 20C in the text) are used to clamp the implanted part K to prevent it from moving during ion implantation or heating.

[0111] For example, such as Figure 1 As shown, the clamping mechanism C can be a second robotic arm (e.g., a single-arm robotic arm).

[0112] In some examples, such as Figure 1 As shown, a portion of the clamping mechanism 10C of the first ion implanter 10 is located outside the first chamber 11; and / or, a portion of the clamping mechanism 20C of the second ion implanter 20 is located outside the second chamber 21.

[0113] In some examples, each of the first ion implanter 10 and the second ion implanter 20 further includes a transfer mechanism D (e.g., a transfer mechanism D disposed between the target stage A and the transfer stage B and mounted on the mounting stage G) Figure 1 (The transfer mechanisms represented by 10D and 20D in the text) are used to transfer the injected part K between the target stage A and the transfer stage B.

[0114] For example, such as Figure 1 As shown, the transfer mechanism D can be a third robotic arm.

[0115] In some examples, such as Figure 1 As shown, the transfer mechanism 10D of the first ion implanter 10 is located in the first chamber 11; and / or, the transfer mechanism 20D of the second ion implanter 20 is located in the second chamber 21.

[0116] In some examples, such as Figure 1 and Figure 2 As shown, the transmission range of the first transmission mechanism 40 covers at least one of the target stage 10A and at least one transfer stage 10B of the first ion implanter 10, and also covers at least one of the target stage 20A and at least one transfer stage 20B of the second ion implanter 20.

[0117] For an understanding of the transmission range of the first transmission mechanism 40, please refer to the aforementioned content, which will not be repeated here.

[0118] With the above configuration, the first transfer mechanism 40 can transfer the implanted part K between one of the target stage 10A and at least one transfer stage 10B of the first ion implanter 10 and one of the target stage 20A and at least one transfer stage 20B of the second ion implanter 20. In other words, the first transfer mechanism 40 can directly take the implanted part K from the target stage A or transfer stage B of one chamber and transfer the implanted part K to the target stage A or transfer stage B of another chamber. Thus, compared with the case where the first transfer mechanism 40 takes or transfers the implanted part K from other mechanisms, the structure of the ion implantation device 100 can be simplified.

[0119] In some examples, the conveying range of the first conveying mechanism 40 covers the target stage 10A of the first ion implanter 10 and also covers the target stage 20A of the second ion implanter 20. Furthermore, the first conveying mechanism 40 conveys the implantable part K from one target stage A to another. In this case, the two ion implantations are performed sequentially, and the two ion implantation operations are not synchronized with the conveying operation of the first conveying mechanism 40; moreover, the implantable part K can only be conveyed when the target stage A for the subsequent ion implantation is vacant, resulting in a relatively long effective processing time for a single implantable part K.

[0120] In some embodiments, such as Figure 1 and Figure 2 As shown, the transmission range of the first transmission mechanism 40 covers at least one relay station 10B of the first ion implanter 10, and also covers at least one relay station 20B of the second ion implanter 20.

[0121] With the above configuration, the first conveying mechanism 40 can convey the implanted part K between the transfer station 10B of the first ion implanter 10 and the transfer station 20B of the second ion implanter 20. This is different from the case where the first conveying mechanism 40 conveys the implanted part K between the target stage 10A of the first ion implanter 10 and the target stage 20A of the second ion implanter 20. At least a portion of the two ion implantation operations can be synchronized with the conveying operation of the first conveying mechanism 40. Furthermore, if there is no available space on the target stage A for the subsequent ion implantation, the implanted part K can be placed on the transfer station B. This shortens the effective processing time for a single implanted part K, improving the efficiency and capacity of the ion implantation equipment 100. In addition, the transfer station B can heat the implanted part K, reducing heat loss during the waiting period for implantation and / or for conveying.

[0122] To more clearly illustrate the processing of the implanted part K in the ion implantation equipment 100, and the methods for shortening the effective processing time in some embodiments of this disclosure, the processing of the implanted part K in the first ion implanter 10 and the second ion implanter 20 will be described in more detail below. It should be noted that the number of transfer stations B, the transport path and time of the implanted part K, and the set temperatures of the target stage and transfer station B, etc., described below are for descriptive purposes only, to make the processing of the implanted part K in the first ion implanter 10 and the second ion implanter 20 clearer, and are not intended to limit these parameters. In practical applications, these parameters can be flexibly set according to process requirements.

[0123] like Figure 1 As shown, the first ion implanter 10 includes a target stage 10A, a transfer stage 10B1 and a transfer stage 10B2, and the second ion implanter 20 includes a target stage 20A, a transfer stage 20B1 and a transfer stage 20B2. The process of the first ion implanter 10 and the second ion implanter performing ion implantation on the implanted part K includes steps S1 to S7.

[0124] S1: The implanted component K (e.g., a 6-inch wafer) is loaded onto the transfer station 10B1. The set temperature of the transfer station 10B1 is 330°C. The transfer station 10B1 preheats the implanted component K for 30 seconds, so that the implanted component K is preheated to about 250°C.

[0125] S2: The implanted part K, which has been preheated by the transfer station 10B1, is transferred from the transfer station 10B1 to the target station 10A in 20s. The target station 10A is set to a temperature of 750℃. The target station 10A heats the implanted part K for 30s to bring the temperature of the implanted part K to 500℃. Then, ion implantation is performed on the implanted part K in 30s.

[0126] S3: The injection target K is transferred from the target stage 10A to the transfer stage 10B2 in 5 seconds; the set temperature of the transfer stage 10B2 is 500℃. The transfer operation in S3 can be performed synchronously with the injection operation of the next injection target K, and the transfer time does not occupy the effective processing time.

[0127] S4: Using the first conveying mechanism 40, the injection component K is conveyed from the transfer station 10B2 to the transfer station 20B1 in 10 seconds; the set temperature of the transfer station 20B1 is 500℃. The conveying operation in S4 can be performed synchronously with the injection operation of the next injection component K, and the conveying time does not occupy the effective processing time.

[0128] S5: The implantable part K is transferred from the transfer station 20B1 to the target station 20A in 20s; the target station 20A is set to 750℃ and heats the implantable part K for 10s to make the temperature of the implantable part K reach 500℃; then, ion implantation is performed on the implantable part K in 30s.

[0129] S6: The injection target K is transferred from the target station 20A to the transfer station 20B2 in 5 seconds. The transfer operation in S6 can be performed synchronously with the injection operation of the next injection target K, and the transfer time does not occupy the effective processing time.

[0130] In some embodiments, after S1, during the process of S2, S1A is also included.

[0131] S1A: Load the next implantable part K into the transfer station 10B1. Then, follow the same steps as S2 to S6 to transfer and implant the next implantable part K with ions.

[0132] From the above steps, it can be seen that the effective processing time (which can also be understood as the single-piece implantation time) of the implanted part K in the first ion implantation includes: a transfer time of 20s in S2, a heating time of 30s, and an implantation time of 30s, totaling 80s. The effective processing time of the implanted part K in the second ion implantation includes: a transfer time of 20s in S5, a heating time of 10s, and an implantation time of 30s, totaling 60s. The effective processing time of the implanted part K in the second ion implantation is shorter because the ion implantation equipment 100 includes a first transfer mechanism 40, which can transfer the implanted part K from the first chamber 11 to the second chamber 21 at a faster speed, so that the temperature of the implanted part K is still high when it arrives at the target stage 20A, and the preheating time of the implanted part K on the target stage 20A is shortened from 30s to 10s. Therefore, based on the above effective processing time, the efficiency of the ion implantation equipment 100 can be increased by 25%, 25% = (80s - 60s) / 80s.

[0133] Furthermore, by including the transfer station 10B2 and the transfer station 20B1 in the ion implantation device 100, the transfer operation in S3 and the transfer operation in S4 can be performed synchronously with the implantation operation of the next implanted part K, so that the transfer time is not included in the effective processing time, thereby further improving the efficiency of the ion implantation device 100.

[0134] Furthermore, some embodiments of this disclosure also provide an ion implantation apparatus 1000. For example... Figure 4As shown, the ion implantation apparatus 1000 includes an ion implantation device 100 and a controller 200. The ion implantation device 100 includes the ion implantation equipment 100 described above. The controller 200 is coupled to the first ion implanter 10 and the second ion implanter 20, and is also coupled to the first transfer mechanism 40.

[0135] For example, when the controller 200 is coupled to the first ion implanter 10 and the second ion implanter 20, the controller 200 can perform at least one of the following functions: controlling ion implantation parameters, controlling the temperature of the target stage A and the transfer stage B, and controlling the transfer mechanism D to transfer the implanted part K.

[0136] For example, when the controller 200 is coupled to the first conveying mechanism 40, the controller 200 can also perform at least one of the following functions: control the time when the first conveying mechanism 40 performs the conveying action, and control the conveying speed of the first conveying mechanism 40.

[0137] It is understood that the beneficial effects of the ion implantation apparatus provided in the above embodiments of this disclosure can be referred to the beneficial effects of the ion implantation equipment described above, and will not be repeated here.

[0138] The above description is merely a specific embodiment of this utility model, but the protection scope of this utility model is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in this utility model should be included within the protection scope of this utility model. Therefore, the protection scope of this utility model should be determined by the protection scope of the claims.

Claims

1. An ion implantation device, characterized in that, include: The first ion implanter has a first chamber; The second ion implanter has a second chamber; The first connecting passage has a third chamber; The third chamber is connected to the first chamber and also to the second chamber; A first conveying mechanism; the conveying range of the first conveying mechanism covers at least a portion of the first chamber, at least a portion of the second chamber, and the third chamber.

2. The ion implantation apparatus according to claim 1, characterized in that, The first transmission mechanism includes: A fixing part; the fixing part is fixed to the inner wall of the third chamber; The moving part; one end of the moving part is connected to the fixed part, and the other end of the moving part can extend into the first cavity and also into the second cavity.

3. The ion implantation apparatus according to claim 1, characterized in that, The first conveying mechanism includes a first robotic arm; the first robotic arm includes: A mounting base is fixed to one of the first ion implanter, the second ion implanter, and the first connecting channel; A motion arm; the fixed base is connected to one end of the motion arm; A support member is connected to the other end of the motion arm; the support member can extend into the first chamber and also into the second chamber.

4. The ion implantation apparatus according to claim 3, characterized in that, The heat resistance temperature of the bearing component is greater than or equal to a preset threshold.

5. The ion implantation apparatus according to claim 4, characterized in that, The preset threshold is greater than or equal to 1000℃.

6. The ion implantation apparatus according to claim 3, characterized in that, The supporting component is a ceramic component.

7. The ion implantation apparatus according to claim 4, characterized in that, The support member includes a first surface and a second surface disposed opposite to each other along its thickness direction, wherein the second surface is farther away from the bottom of the first connecting channel than the first surface; A groove is formed on the second surface of the carrier, and the groove is used to accommodate the injected part carried by the carrier.

8. The ion implantation apparatus according to claim 7, characterized in that, The groove extends through the support member along a first direction, which is perpendicular to the thickness direction of the support member and also perpendicular to the extension direction of the support member.

9. The ion implantation apparatus according to claim 7, characterized in that, The groove includes: A first groove wall and a second groove wall are disposed opposite to each other along the extension direction of the support member; each of the first groove wall and the second groove wall includes an arc-shaped groove wall; the arc-shaped groove wall of the first groove wall and the arc-shaped groove wall of the second groove wall protrude in a direction away from each other.

10. The ion implantation apparatus according to claim 7, characterized in that, The ratio of the groove depth to the thickness of the bearing member is greater than or equal to 0.05 and less than or equal to 0.

55.

11. The ion implantation apparatus according to any one of claims 1 to 10, characterized in that, Each of the first and second ion implanters includes: A target stage, used at least for ion implantation; At least one transfer station; the transfer station is configured to heat the injection component when it is transferred to the transfer station; The first conveying mechanism covers at least one of the target stage and the at least one transfer stage of the first ion implanter, and also covers at least one of the target stage and the at least one transfer stage of the second ion implanter.

12. The ion implantation apparatus according to claim 11, characterized in that, The transmission range of the first transmission mechanism covers at least one of the transfer stations of the first ion implanter and also covers at least one of the transfer stations of the second ion implanter.

13. An ion implantation device, characterized in that, include: The ion implantation apparatus as described in any one of claims 1 to 12; The controller is coupled to the first ion implanter and the second ion implanter, and also coupled to the first conveying mechanism.

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