Heat dissipation substrate and power semiconductor module

Abstract

The utility model belongs to the field of heat dissipation of power semiconductor modules, and particularly discloses a heat dissipation substrate and a power semiconductor module. The heat dissipation substrate comprises a bottom plate and a plurality of stand columns arranged on the bottom plate in an array mode, a working area is arranged on the surface of the side, opposite to the stand columns, of the bottom plate, heat dissipation holes are formed in the middles of the stand columns, and the axes of the heat dissipation holes are parallel to the radial directions of the stand columns. A plurality of groups of first flow guide grooves are respectively formed in two sides of the heat dissipation hole in the stand column, the circulation direction of the plurality of groups of first flow guide grooves is parallel to the axis of the heat dissipation hole, and the plurality of groups of first flow guide grooves are axially distributed along the stand column; the power semiconductor module comprises a heat dissipation substrate. By adopting the scheme of the utility model, the problems that the existing power semiconductor module only dissipates heat through the heat dissipation substrate or the heat dissipation column, the unit heat dissipation area is small, and the heat dissipation performance is difficult to adapt to the high-power semiconductor module can be solved.

Description

Technical Field

[0001] This utility model belongs to the field of heat dissipation of power semiconductor modules, and specifically relates to a heat dissipation substrate and a power semiconductor module. Background Technology

[0002] In the main drive inverter of new energy vehicles, power semiconductor modules (such as IGBT modules, MOSFET modules, etc.) are one of the key components for power inversion to drive the motor. Their performance directly affects the performance and lifespan of new energy electric vehicles, and the heat dissipation of power semiconductor modules has always been an important factor restricting their development.

[0003] Currently, there are two main heat dissipation structures for power semiconductor modules. One is a flat plate that dissipates heat by applying thermal grease to the plate. The other is to set heat dissipation pillars on the copper substrate of the power semiconductor module and dissipate heat by flushing the heat dissipation pillars with a cooling medium (such as water or air). Compared with applying thermal grease to the plate, the heat dissipation performance is significantly improved.

[0004] However, with the increasing power of power semiconductor modules and the rapid development of SiC and GaN power chips, the application environment is becoming increasingly complex, especially in extremely hot weather, which places more stringent demands on the heat dissipation capabilities of power semiconductor modules. Therefore, in addition to breakthroughs in power packaging, optimizing the heat dissipation components of power semiconductor modules is also crucial. Existing power semiconductor modules rely solely on heat dissipation substrates or heat sinks for cooling, resulting in a small heat dissipation area per unit area. This makes their heat dissipation performance unsuitable for power semiconductor modules of 3kV and above, particularly high-performance SiC and GaN power semiconductor modules. This mismatch with the performance of the corresponding power semiconductor modules severely impacts their performance and lifespan, further affecting the safety and reliability of the application. Utility Model Content

[0005] To address the shortcomings of existing technologies, this utility model provides a heat dissipation substrate and a power semiconductor module, thereby solving the problem that existing power semiconductor modules only dissipate heat through heat dissipation substrates or heat dissipation pillars, resulting in a small heat dissipation area per unit area and heat dissipation performance that is difficult to apply to high-power semiconductor modules.

[0006] According to the embodiments of this utility model, the following technical solution is adopted:

[0007] A heat dissipation substrate includes a base plate and a plurality of columns arranged in an array on the base plate. A working area is provided on the side surface of the base plate facing away from the columns. Heat dissipation holes are provided in the middle of each column, and the axis of the heat dissipation holes is parallel to the radial direction of the columns. Multiple sets of first guide grooves are provided on both sides of the heat dissipation holes on the columns. The first guide grooves have a flow direction consistent with the flow direction of the heat dissipation holes. The multiple sets of first guide grooves are distributed along the axial direction of the columns.

[0008] Compared with the prior art, the present invention has the following beneficial effects:

[0009] In this solution, by designing heat dissipation holes on the column, the flow channel of the cooling medium during the application of the power semiconductor module is increased. That is, when the cooling medium is flushed on the column, it will also flow through the heat dissipation holes, increasing the heat dissipation area and thus improving the heat dissipation performance.

[0010] In addition, the first guide groove is set on the columns on both sides of the heat dissipation hole, which further increases the heat dissipation area. The first guide groove guides the flow of the cooling medium, allowing the cooling medium to have more full contact with the column, thereby achieving a better cooling effect and improving heat dissipation performance.

[0011] Furthermore, the column is divided into two columns by heat dissipation holes, and the first guide groove is either an annular groove set on the column or two half grooves set opposite each other on both sides of the column.

[0012] Furthermore, the first guide channel is continuously curved.

[0013] Furthermore, a second vertical guide groove is provided on the column, which connects multiple sets of first guide grooves distributed along the axial direction of the column.

[0014] Furthermore, the second guide channel is connected to the recess of the first guide channel.

[0015] Furthermore, the columns in adjacent rows are arranged in a neat, corresponding or staggered manner.

[0016] Furthermore, the heat dissipation vents are open at the end facing away from the base plate.

[0017] Furthermore, a boss is provided between the base plate and the column, and the boss corresponds to the working area on the base plate.

[0018] Furthermore, the base plate and the column are made of one or more of copper, copper alloy, aluminum, and aluminum alloy, and the base plate and the column are integrally formed or welded together.

[0019] According to the embodiments of this utility model, the following technical solution is adopted:

[0020] Power semiconductor module, including heat dissipation substrate.

[0021] Compared with the prior art, the present invention has the following beneficial effects:

[0022] By designing a heat dissipation substrate, the heat dissipation area is increased, improving the performance of the power semiconductor module and enabling it to be used in applications with higher power output. Attached Figure Description

[0023] Figure 1 This is a front view of the heat dissipation hole in Embodiment 1 of this utility model with the lower end open.

[0024] Figure 2 This is a bottom view of the heat dissipation hole in Embodiment 1 of this utility model with the lower end closed.

[0025] Figure 3 This is a schematic diagram of the column structure in Embodiment 2 of this utility model.

[0026] Figure 4 This is a schematic diagram of the structure of the first guide channel and the second guide channel in Embodiment 2 of this utility model.

[0027] In the diagram: 1. Base plate; 2. Boss; 3. Column; 4. Heat dissipation hole; 5. Mounting hole; 6. Column body; 7. First guide channel; 8. Second guide channel. Detailed Implementation

[0028] The present invention will be further described in detail below with reference to the accompanying drawings, and specific embodiments will be given.

[0029] Example 1

[0030] like Figure 1 , Figure 2 As shown, a heat dissipation substrate includes a base plate 1 and a plurality of columns 3 arranged in an array on the base plate 1. A working area is provided on the side surface of the base plate 1 facing away from the columns 3. The working area is the area where electronic components of the power semiconductor template are mounted. To facilitate the assembly and application of the power semiconductor template, a plurality of mounting holes 5 are provided on the base plate 1. The mounting holes 5 are used to connect and assemble the base plate 1 and other components of the power semiconductor template.

[0031] The columns 3 in adjacent rows are arranged either in a neat, corresponding manner or in an alternating manner. Figure 2 The upper pillars 3 shown are all arranged in a neat and corresponding manner, while the pillars 3 of the five lower rows are arranged in an alternating manner, which can be selected according to the actual situation.

[0032] Each column 3 has a heat dissipation hole 4 in its middle section. The axis of the heat dissipation hole 4 is parallel to the radial direction of the column 3. In actual application, after the base plate 1 is installed, the column 3 is placed in the flow area of ​​the cooling medium (coolant or cooling air). The cooling medium flows and washes the column 3 to dissipate heat, and the axis of the heat dissipation hole 4 is parallel to the flow direction of the cooling medium, facilitating the flow of the cooling medium through the heat dissipation hole 4. In actual design, the end of the heat dissipation hole 4 facing away from the base plate 1 can also be designed as open (see...). Figure 1 (as shown in the state) Figure 2 The end of the heat dissipation hole 4 facing away from the base plate 1 is closed, as shown in the figure.

[0033] Multiple sets of first guide grooves 7 are respectively provided on both sides of the heat dissipation hole 4 on the column 3. The first guide grooves 7 have a flow direction consistent with the flow direction of the heat dissipation hole 4, so as to... Figure 1 Taking the direction shown as an example, if the cooling medium flows from the heat dissipation hole 4 in a direction perpendicular to the paper surface, then the cooling medium also flows from the first guide groove 7 in a direction perpendicular to the paper surface. Multiple sets of first guide grooves 7 are distributed along the axial direction of the column 3. The specific shape design of the first guide groove 7 is as follows: the column 3 is divided into two columns 6 by the heat dissipation hole 4; the first guide groove 7 is either an annular groove provided on the column 6 or two non-connected semi-grooves arranged opposite each other on both sides of the column 6. Figure 1 The first guide channel 7 shown is an annular channel. In actual design, it is based on... Figure 1 Taking the direction shown as an example, the first guide channel 7 can also be two half-channels set on the left and right sides of the main body 6. By guiding the cooling medium through the first guide channel 7, the cooling medium can have more full contact with the column 3, thereby achieving a better cooling effect and improving heat dissipation performance.

[0034] A boss 2 is provided between the base plate 1 and the column 3. The boss 2 corresponds to the working area on the base plate 1. By aligning the boss 2 with the working area, the installation range of the column 3 is restricted and positioned, so that the column 3 can be installed in the area directly opposite the working area, thus achieving optimal heat dissipation.

[0035] In the actual design process, the base plate 1, column 3, and boss 2 are all made of one or more of copper, copper alloy, aluminum, and aluminum alloy. The base plate 1, boss 2, and column 3 are integrally formed or welded together. For ease of processing, the base plate 1, column 3, and boss 2 can be made of the same metal, for example, all of them can be integrally formed of copper alloy. If welding is used, the connection can be made through solder, solder sheet, solder paste, or other connecting media. If the process allows, it can also be directly welded using welding equipment.

[0036] The distance between the two ends of the heat dissipation hole 4 along the axial direction of the column 3 and the two ends of the column 3 is 1-3mm. In the actual design process, the thickness of the base plate 1 does not exceed 10mm, the height of the column 3 is 2-12mm, the bottom is rectangular with the heat dissipation hole 4 open at the bottom, the first guide groove 7 is set on the column 6 in an annular groove, the thickness of the base plate 1 is 4mm, the thickness of the boss 2 is 2mm, the height of the column 3 is 10mm, and the design of the base plate 1, boss 2 and column 3 are integrally formed is used as an example. A comparative experiment is carried out with the traditional design of only setting the column 3 on the base plate 1 (existing module). Under the condition that the chip and electrical structure of the power semiconductor module are the same, and the coolant of the same formula is used to flush the column 3 at the same flow rate in 5.5kW high power mode, the temperature released by the power semiconductor module at different time points within 30 minutes of operation is shown in Table 1 below:

[0037] 0min 5min 10min 15min 20min 25min 30min Existing modules 5℃ 42.3℃ 71.5℃ 90.6℃ 100.1℃ 100.7℃ 100.6℃ Example 1 4℃ 33.3℃ 63.8℃ 79.3℃ 79.9℃ 79.5℃ 79.8℃

[0038] Table 1. Temperature comparison of power semiconductor modules at different time points (temperature is chip junction temperature)

[0039] As shown in Table 1, the heat dissipation substrate provided in this embodiment, under the same conditions, has a lower temperature at each time point after the power semiconductor module starts working than the existing module, resulting in better heat dissipation. At the same time, it reaches thermal equilibrium at least 5 minutes earlier, effectively improving the reliability of the power semiconductor module.

[0040] Example 2

[0041] Combination Figure 3 , Figure 4 As shown, Figure 3 The design on one side of the column 3 shown is the design of the column 6 in Embodiment 1, while the design on the other side of the column 3 is the design of this embodiment. In this embodiment, in order to increase the residence time of the cooling medium in the first guide channel 7 and at the same time increase the heat dissipation area, the first guide channel 7 is continuously curved. On the one hand, this increases the contact area between the first guide channel 7 and the cooling medium, and on the other hand, it also makes the cooling medium need a longer time to flow through the first guide channel 7, thereby improving the heat dissipation effect to a certain extent.

[0042] A vertical second guide groove 8 is provided on the column 6. The second guide groove 8 connects multiple sets of first guide grooves 7 distributed along the axial direction of the column 6. The second guide groove 8 connects to the recess of the first guide groove 7. By setting the second guide groove 8, the heat dissipation area is further increased. At the same time, the second guide groove 8 can avoid the problem of cooling medium remaining in the recess of the first guide groove 7 without flowing, thereby further improving the heat dissipation effect.

[0043] Example 3

[0044] This embodiment discloses a power semiconductor module, including the heat dissipation substrate described in Embodiment 1 or Embodiment 2. The power semiconductor module in this embodiment can be an IGBT module, a MOSFET module, a GaN module, a SiC module, etc.

[0045] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus.

[0046] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this utility model and are not intended to limit it. Although this utility model has been described in detail with reference to preferred embodiments, those skilled in the art should understand that modifications or equivalent substitutions can be made to the technical solutions of this utility model without departing from the spirit and scope of the technical solutions of this utility model, and all such modifications or substitutions should be covered within the scope of the claims of this utility model.

Claims

1. A heat dissipation substrate, characterized in that: It includes a base plate and several columns arranged in an array on the base plate. The surface of the base plate facing away from the columns is provided with a working area. Each column has a heat dissipation hole in the middle, and the axis of the heat dissipation hole is parallel to the radial direction of the column. Multiple sets of first guide grooves are provided on both sides of the heat dissipation hole on the column. The first guide grooves have a flow direction consistent with the flow direction of the heat dissipation hole. The multiple sets of first guide grooves are distributed along the axial direction of the column.

2. The heat dissipation substrate according to claim 1, characterized in that: The column is divided into two columns by heat dissipation holes. The first guide groove is either an annular groove set on the column or two half grooves set opposite each other on both sides of the column.

3. A heat dissipation substrate according to claim 2, characterized in that: The first guide channel is continuously curved.

4. A heat dissipation substrate according to claim 3, characterized in that: The column is provided with a vertical second guide groove, which connects multiple sets of first guide grooves distributed along the axial direction of the column.

5. A heat dissipation substrate according to claim 4, characterized in that: The second guide channel is connected to the recess of the first guide channel.

6. A heat dissipation substrate according to claim 1, characterized in that: The columns in adjacent rows are arranged in a neat, corresponding or staggered manner.

7. A heat dissipation substrate according to claim 1, characterized in that: The heat dissipation hole is open at the end facing away from the base plate.

8. A heat dissipation substrate according to claim 1, characterized in that: A boss is provided between the base plate and the column, and the boss corresponds to the working area on the base plate.

9. A power semiconductor module, characterized in that: Includes a heat dissipation substrate as described in any one of claims 1-8.

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