Reaction furnace and processing equipment

Abstract

The utility model provides a reaction furnace and processing equipment, relates to the field of semiconductor or photovoltaic material processing, and solves the technical problem of non-uniform air intake of a traditional oxygen pipe into a reaction cavity. The reaction furnace comprises: a furnace tube assembly having a reaction chamber extending along a first horizontal direction; the at least two air inlet pipes are respectively arranged at the first end and the second end of the reaction cavity, and the side wall of each air inlet pipe is provided with at least one air inlet hole; and the gas inlet assembly extends into the reaction cavity from the outside of the reaction cavity, is communicated with the at least two gas inlet pipes and is configured to provide process gas for the at least two gas inlet pipes. Through the structure, the process gas can be respectively conveyed to the first end and the second end of the reaction cavity through the at least two gas inlet pipes, so that the process gas is dispersed when entering the reaction cavity, the uniformity of a gas field in the reaction cavity is favorably improved, the local temperature is prevented from being greatly reduced, the coating uniformity of a product can be improved, and the product quality is improved. Therefore, the yield of products is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of semiconductor or photovoltaic material processing, and in particular to a reaction furnace and a processing device. BACKGROUND

[0002] Renewable energy, solar energy, has become an important source of power supply for the next generation. N-type silicon wafers have become the preferred substrate for solar cells due to their longer carrier lifetime and no light-induced degradation. Currently, the Tunnel Oxide Passivated Contact (TOPCon) cell based on this has become the dominant product of the current market of crystalline silicon solar cells. The core structure of the TOPCon cell adopts a back passivation design composed of an ultra-thin silicon oxide layer (i.e., a tunnel oxide layer, referred to as a tunnel layer) and a phosphorus-doped polysilicon layer. The thickness of the tunnel layer is usually 1-2 nanometers, which utilizes the quantum tunneling effect to realize the transmission of electrons while effectively preventing hole recombination, thereby achieving the purpose of passivating the back surface of the solar cell. The thickness of the tunnel layer has a great influence on the performance of the solar cell. If the tunnel layer is too thick, it will hinder the effective tunneling of electrons and affect the current collection. If the tunnel layer is too thin, it may produce too many pinholes, resulting in reduced passivation effect and increased carrier recombination. Currently, the tunnel oxide layer of the solar cell is mainly prepared by a Low Pressure Chemical Vapor Deposition (LPCVD) device.

[0003] However, the film thickness uniformity of the tunnel oxide layer prepared by the conventional LPCVD device is poor, and the yield is low. CONTENT OF THE INVENTION

[0004] To solve the above technical problems, the present application is proposed. The embodiments of the present application provide a reaction furnace and a processing device.

[0005] In a first aspect, an embodiment of the present application provides a reaction furnace, comprising: a furnace tube assembly having a reaction cavity extending along a first horizontal direction; at least two gas inlet tubes arranged at a first end and a second end of the reaction cavity, respectively, each gas inlet tube having at least one gas inlet hole in the side wall thereof; and a gas inlet assembly extending into the reaction cavity from outside the reaction cavity and in communication with the at least two gas inlet tubes, configured to provide process gas to the at least two gas inlet tubes.

[0006] In some embodiments, the at least two gas inlet tubes are arranged at the bottom and / or the top of the reaction cavity.

[0007] In some embodiments, the gas inlet pipe extends along a second horizontal direction, the second horizontal direction being transverse to the first horizontal direction; in the case that the gas inlet pipe is located at the top of the reaction chamber, the gas inlet hole of the gas inlet pipe located at the top of the reaction chamber faces downward; in the case that the gas inlet pipe is located at the bottom of the reaction chamber, the gas inlet hole of the gas inlet pipe located at the bottom of the reaction chamber faces upward.

[0008] In some embodiments, the reaction chamber has a first cross section perpendicular to the first horizontal direction, the shape of the first cross section comprises a circle, the gas inlet pipe has a second cross section perpendicular to the first horizontal direction, the shape of the second cross section comprises an arc, the curvature of the circle is the same as the curvature of the arc, the side wall of the gas inlet pipe has a plurality of gas inlet holes, the plurality of gas inlet holes are arranged along the extension direction of the gas inlet pipe, and each gas inlet hole faces the center of the circle of the second cross section of the gas inlet pipe where the gas inlet hole is located.

[0009] In some embodiments, the reaction chamber has a first cross section perpendicular to the first horizontal direction, the shape of the first cross section comprises a circle, the gas inlet pipe has a second cross section perpendicular to the first horizontal direction, the shape of the second cross section comprises an arc, the curvature of the circle is the same as the curvature of the arc, the side wall of the gas inlet pipe has a plurality of gas inlet holes, the plurality of gas inlet holes are arranged along the extension direction of the gas inlet pipe, and each gas inlet hole faces the center of the circle of the second cross section of the gas inlet pipe where the gas inlet hole is located.

[0010] In some embodiments, the number of gas inlet pipes is two; wherein the gas inlet assembly comprises: a multi-way pipe, a first end of the multi-way pipe being in communication with the gas inlet pipe located at the first end of the reaction chamber, a second end of the multi-way pipe being in communication with the gas inlet pipe located at the second end of the reaction chamber, and a third end of the multi-way pipe being in communication with the gas supply device, the multi-way pipe being configured to receive the process gas provided by the gas supply device and deliver the process gas to the two gas inlet pipes.

[0011] In some embodiments, the side wall of the gas inlet pipe has a plurality of gas inlet holes; wherein the plurality of gas inlet holes are uniformly arranged along the extension direction of the gas inlet pipe, and / or the plurality of gas inlet holes face the inner wall of the furnace pipe assembly.

[0012] In some embodiments, the diameter of the gas inlet pipe ranges from 0.25 inches to 0.5 inches.

[0013] In some embodiments, the diameter of the gas inlet hole ranges from 1.5 mm to 2.5 mm.

[0014] In a second aspect, an embodiment of the present application provides a processing equipment, comprising: the reaction furnace of any of the above embodiments, configured to process a product; and a gas supply device, in communication with the gas inlet assembly of the reaction furnace, configured to provide process gas to the gas inlet assembly.

[0015] The inventor has found through research that in the preparation of a tunneling oxide layer by a traditional LPCVD device, a straight-through pipe parallel to the furnace pipe is inserted horizontally from the inside of the furnace pipe to introduce oxygen into the furnace pipe to react with the silicon wafer to form an oxide layer. When the straight-through pipe outputs oxygen, a large amount of oxygen enters the reaction chamber of the furnace pipe from the single gas inlet hole of the straight-through pipe, and the oxygen concentration is not uniformly distributed at different distances from the gas inlet hole of the straight-through pipe in the reaction chamber, and the gas field uniformity is poor. Moreover, if oxygen is released only by one gas inlet hole, when oxygen is concentrated and introduced, the temperature at the local position will drop sharply, that is, the temperature at the position close to the gas inlet hole in the reaction chamber will drop more, which further leads to poor uniformity of the tunneling oxide layer film thickness and a decrease in the yield.

[0016] The reaction furnace and the processing device provided by the embodiment of the present application can make the process gas be respectively delivered to the first end and the second end of the reaction chamber through the at least two gas inlet pipes, so that the process gas is dispersed into the reaction chamber from the first end and the second end of the reaction chamber when entering the reaction chamber, which is beneficial to improve the uniformity of the gas field in the reaction chamber. Moreover, the structure of dispersing the process gas into the reaction chamber avoids a sharp drop in the local temperature, so that the temperature in the reaction chamber is more uniform, thereby improving the uniformity of the product film plating and the yield of the product. In addition, the gas inlet pipe structure in the embodiment of the present application is simple and low in cost, and can be widely promoted. BRIEF DESCRIPTION OF DRAWINGS

[0017] The above and other objects, features and advantages of the present application will become more apparent from the following detailed description when taken in conjunction with the accompanying drawings in which:

[0018] Figure 1 Fig. 1 shows a front view of a reaction furnace and paddle structure provided by an exemplary embodiment of the present application.

[0019] Figure 2 Fig. 2 shows a front view of a reaction furnace and paddle structure provided by an exemplary embodiment of the present application. Figure 1 Fig. 3 shows a sectional view of the reaction furnace and paddle structure along the AA direction.

[0020] Figure 3 Fig. 4 shows a top view of the reaction furnace and paddle structure provided by an exemplary embodiment of the present application.

[0021] Figure 4 Fig. 5 shows a front view of a reaction furnace and paddle structure provided by an exemplary embodiment of the present application. Figure 3 Fig. 6 shows a sectional view of the reaction furnace and paddle structure along the BB direction.

[0022] Figure 5 Fig. 7 shows a front view of a reaction furnace and paddle structure provided by an exemplary embodiment of the present application.Figure 4 A partial enlarged view of the reaction furnace and the paddle structure in region C is shown.

[0023] Figure 6 A structural schematic diagram of the gas inlet pipe provided by an example embodiment of the present application is shown.

[0024] Figure 7 A structural schematic diagram of the processing equipment provided by an example embodiment of the present application is shown.

[0025] Reference signs:

[0026] 100, reaction furnace; 110, furnace pipe assembly; 111, furnace pipe; 112, tail end cover; 113, water cooling flange; 114, furnace door; 115, vertical symmetry plane; 120, gas inlet pipe; 121, gas inlet hole; 130, gas inlet assembly; 131, multi-way pipe; 132, connecting pipe; 200, gas supply device; 300, processing equipment; 400, paddle structure; 500, boat structure. DETAILED DESCRIPTION

[0027] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of protection of the present application.

[0028] Figure 1 A front view of the reaction furnace and the paddle structure provided by an example embodiment of the present application is shown, Figure 2 A front view of the reaction furnace and the paddle structure provided by an example embodiment of the present application is shown, Figure 1 A sectional view of the reaction furnace and the paddle structure along the AA direction is shown, Figure 3 A top view of the reaction furnace and the paddle structure provided by an example embodiment of the present application is shown, Figure 4 A front view of the reaction furnace and the paddle structure provided by an example embodiment of the present application is shown, Figure 3 A sectional view of the reaction furnace and the paddle structure along the BB direction is shown, Figure 5 A front view of the reaction furnace and the paddle structure provided by an example embodiment of the present application is shown, Figure 4 A partial enlarged view of the reaction furnace and the paddle structure in region C is shown, Figure 6 A structural schematic diagram of the gas inlet pipe provided by an example embodiment of the present application is shown.

[0029] As Figures 1 to 6 An example embodiment of the present application provides a reaction furnace 100, which comprises a furnace pipe assembly 110, at least two gas inlet pipes 120 and a gas inlet assembly 130. The furnace pipe assembly 110 has a first horizontal direction (such as the horizontal direction of the furnace pipe 111) and a second horizontal direction (such as the horizontal direction of the furnace pipe 111) perpendicular to the first horizontal direction. The furnace pipe assembly 110 comprises a plurality of furnace pipes 111 arranged in parallel along the first horizontal direction. The furnace pipe assembly 110 comprises a plurality of furnace pipes 111 arranged in parallel along the second horizontal direction. The furnace pipe assembly 110 comprises a plurality of furnace pipes 111 arranged in parallel along the first horizontal direction and the second horizontal direction. Figure 2The reaction cavity extends in the X direction). At least two gas inlet tubes 120 are arranged at the first end and the second end of the reaction cavity respectively, and the sidewall of each gas inlet tube 120 has at least one gas inlet hole 121. A gas inlet assembly 130 extends into the reaction cavity from outside the reaction cavity and communicates with the at least two gas inlet tubes 120, and is configured to provide process gas to the at least two gas inlet tubes 120.

[0030] Exemplarily, one gas inlet tube 120 can be arranged at the first end of the reaction cavity, and one gas inlet tube 120 can be arranged at the second end of the reaction cavity.

[0031] Exemplarily, the process gas can be oxygen.

[0032] Exemplarily, the reaction cavity is configured to accommodate a product, and the product can be a sheet material such as a silicon wafer, a glass substrate, a wafer, etc. In actual applications, the sheet material is usually carried by a boat structure 500. The boat structure 500 is usually sent to the reaction cavity by the paddle structure 400.

[0033] Exemplarily, the gas inlet assembly 130 can include a multi-way pipe and / or a double-way pipe.

[0034] Exemplarily, the sidewall of each gas inlet tube 120 has six gas inlet holes 121.

[0035] In the above embodiment, the process gas can be delivered to the first end and the second end of the reaction cavity through the at least two gas inlet tubes 120 respectively, so that the process gas is dispersed into the reaction cavity from the first end and the second end of the reaction cavity when entering the reaction cavity, which is beneficial to improve the uniformity of the gas field in the reaction cavity. In addition, the structure of the gas inlet tube 120 in the embodiment of the present application is simple and low in cost, and can be widely promoted.

[0036] In some embodiments, the at least two gas inlet tubes 120 are arranged at the bottom or the top of the reaction cavity. Exemplarily, as shown in Figure 4 The at least two gas inlet tubes 120 can be arranged at the bottom of the reaction cavity.

[0037] In some embodiments, the at least two gas inlet tubes 120 can also be arranged on the side surface between the top and the bottom of the inner wall of the reaction cavity.

[0038] In some embodiments, the at least two gas inlet tubes 120 are arranged at the bottom and / or the top of the reaction cavity.

[0039] Exemplarily, the bottom and the top of the first end of the reaction cavity are each provided with a gas inlet tube 120, and the bottom and the top of the second end of the reaction cavity are each provided with a gas inlet tube 120.

[0040] In the above embodiments, by simultaneously providing air inlet pipes 120 at the bottom and top of the reaction chamber, the process gas can enter the reaction chamber from the bottom and top of the reaction chamber respectively, thereby improving the uniformity of the gas field in the reaction chamber and thus improving the uniformity of the coating thickness of the product.

[0041] In some embodiments, the intake pipe 120 is along a second horizontal direction (e.g., Figure 2 The second horizontal direction extends in the Y direction and intersects the first horizontal direction. When the air inlet pipe 120 is located at the top of the reaction chamber, the air inlet hole 121 of the air inlet pipe 120 located at the top of the reaction chamber faces downward; when the air inlet pipe 120 is located at the bottom of the reaction chamber, the air inlet hole 121 of the air inlet pipe 120 located at the bottom of the reaction chamber faces upward.

[0042] For example, the second horizontal direction is a direction perpendicular to the first horizontal direction.

[0043] In the above embodiments, by having the top inlet pipe 120 release process gas downwards and the bottom inlet pipe 120 release process gas upwards, the uniformity of the gas field within the reaction chamber can be improved. Furthermore, if the inlet pipe 120 is located at the bottom of the reaction chamber and releases process gas upwards, the process gas will first be ejected to the top of the reaction chamber. Since the top of the reaction chamber is typically hotter, the process gas will first heat up at the top before diffusing to other areas, thereby improving coating uniformity. Additionally, since the product is usually placed in the center of the reaction chamber, this structure prevents the process gas released from the inlet pipe 120 from directly blowing onto the product, further enhancing coating uniformity.

[0044] In some embodiments, the reaction chamber has a first cross section perpendicular to the first horizontal direction, and the shape of the first cross section includes a circle. The intake pipe 120 has a second cross section perpendicular to the first horizontal direction, and the shape of the second cross section includes an arc. The curvature of the circle is the same as the curvature of the arc. The sidewall of the intake pipe 120 has a plurality of intake holes 121. The plurality of intake holes 121 are arranged along the extension direction of the intake pipe 120, and each intake hole 121 faces the center of the second cross section of the intake pipe 120 where the intake hole 121 is located.

[0045] In the above embodiments, this structure allows the process gas ejected from the air inlet 121 to be directed towards the central axis of the reaction chamber extending along the first horizontal direction, improving the uniformity of the gas field within the reaction chamber and thus enhancing the uniformity of the product coating thickness. Furthermore, since the product is typically placed in the center of the reaction chamber, this structure prevents the process gas released from the air inlet pipe 120 from directly blowing onto the product, further improving the uniformity of the coating.

[0046] In some embodiments, the circle and the arc are concentric. By making the circle and the arc concentric, the air inlet pipe 120 can be made closer to and fit against the inner wall of the furnace tube assembly 110 when it is installed, so as to reserve a sufficiently large safety distance for the product to enter and exit the reaction chamber.

[0047] In some embodiments, the reaction chamber has a first cross section perpendicular to the first horizontal direction, and the shape of the first cross section includes a circle. The air intake pipe 120 has a second cross section perpendicular to the first horizontal direction, and the shape of the second cross section includes an annular shape. The sidewall of the air intake pipe 120 has a plurality of air intake holes 121, which are arranged along the extension direction of the air intake pipe 120. Each air intake hole 121 is oriented toward the center of the second cross section of the air intake pipe 120 where the air intake hole 121 is located.

[0048] In the above embodiments, this structure allows the process gas ejected from the air inlet 121 to be directed towards the central axis of the reaction chamber extending along the first horizontal direction, improving the uniformity of the gas field within the reaction chamber and thus enhancing the uniformity of the product coating thickness. Furthermore, since the product is typically placed in the center of the reaction chamber, this structure prevents the process gas released from the air inlet pipe 120 from directly blowing onto the product, further improving the uniformity of the coating.

[0049] In some embodiments, the circle and the annulus are concentric. By making the circle and the annulus concentric, the inlet pipe 120 can be made closer to and fit against the inner wall of the furnace tube assembly 110 when it is installed, thus providing a sufficiently large safety distance for the product to enter and exit the reaction chamber.

[0050] In some embodiments, such as Figure 2 and Figure 4 As shown, the reaction chamber has a vertical symmetry plane 115 (i.e., the reaction chamber is symmetrical with respect to the vertical symmetry plane 115), and at least two air inlet pipes 120 are symmetrically arranged with respect to the vertical symmetry plane 115.

[0051] For example, the product to be processed can be placed in the central area of ​​the reaction chamber, and two air inlet pipes 120 are symmetrically arranged with respect to the vertical symmetry plane 115, thus being placed on both sides of the boat structure, with the distance between the two air inlet pipes 120 and the boat structure being equal.

[0052] In the above embodiments, this structure allows the process gas ejected from the air inlet pipe 120 to diffuse more evenly within the reaction chamber, improving the uniformity of the gas field within the reaction chamber and thus enhancing the uniformity of the product coating.

[0053] In some embodiments, the number of the gas inlet pipes 120 is two. The gas inlet assembly 130 includes two double pipes, one double pipe has two ends respectively connected with the gas supply device 200 and the gas inlet pipe 120 located at the first end of the reaction chamber, and the other double pipe has two ends respectively connected with the gas supply device 200 and the gas inlet pipe 120 located at the second end of the reaction chamber.

[0054] In some embodiments, as shown in Figures 1 to 5 , the number of the gas inlet pipes 120 is two. The gas inlet assembly 130 includes a multi-pipe 131. The first end of the multi-pipe 131 is connected with the gas inlet pipe 120 located at the first end of the reaction chamber, the second end of the multi-pipe 131 is connected with the gas inlet pipe 120 located at the second end of the reaction chamber, and the third end of the multi-pipe 131 is connected with the gas supply device 200. The multi-pipe 131 is configured to receive the process gas provided by the gas supply device 200 and deliver the process gas to the two gas inlet pipes 120.

[0055] Exemplarily, the part between the first end and the second end of the multi-pipe 131 can be located inside or outside the reaction chamber.

[0056] In the above embodiments, the gas supply device 200 provides the process gas to the multi-pipe 131, which can make the gas inlet pipes 120 located at the first end and the second end of the reaction chamber receive the process gas almost simultaneously, thereby improving the uniformity of the gas field in the reaction chamber and improving the uniformity of the product film. Moreover, by connecting the two gas inlet pipes 120 with the two ends of one multi-pipe 131, compared with connecting the two gas inlet pipes 120 with the two ends of two double pipes 131, the number of pipes used is saved, thereby saving the cost. In addition, if the part between the first end and the second end of the multi-pipe 131 is located outside the reaction chamber, it is convenient for the staff to install and disassemble (such as disassembly when maintaining the multi-pipe 131).

[0057] In some embodiments, as shown in Figure 4 and Figure 5 , the furnace pipe assembly 110 includes a furnace pipe 111, an end cap 112, a water-cooled flange 113, and a furnace door 114. The furnace pipe 111 extends along a first horizontal direction, and the first end and the second end of the furnace pipe 111 have a first opening and a second opening, respectively. The water-cooled flange 113 is connected with the first end of the furnace pipe 111, the furnace door 114 is connected with the water-cooled flange 113, and the water-cooled flange 113 and the furnace door 114 are configured to close the first opening. The end cap 112 is connected with the second end of the furnace pipe 111, and the end cap 112 is configured to close the second opening.

[0058] In some embodiments, as shown in Figure 4 , Figure 5 and Figure 6As shown, the water-cooled flange 113 has a first through hole, the tail end cover 112 has a second through hole, and the reaction furnace 100 further comprises two connecting pipes 132. A first end of one connecting pipe 132 extends into the reaction chamber through the first through hole from outside of the reaction chamber and communicates with the gas inlet pipe 120 at the first end of the reaction chamber, a second end of the one connecting pipe 132 communicates with the first end of the multi-way pipe 131, a first end of the other connecting pipe 132 extends into the reaction chamber through the second through hole from outside of the reaction chamber and communicates with the gas inlet pipe 120 at the second end of the reaction chamber, and a second end of the other connecting pipe 132 communicates with the second end of the multi-way pipe 131.

[0059] In actual processing, the connecting pipes 132 and the gas inlet pipes 120 can be integrally formed, and the multi-way pipe 131 and the connecting pipes 132 can be detachably connected.

[0060] In some embodiments, as shown in FIG. 1, the gas inlet pipe 120 has a plurality of gas inlet holes 121. Figure 6 As shown, the side wall of the gas inlet pipe 120 has a plurality of gas inlet holes 121, wherein the plurality of gas inlet holes 121 are uniformly arranged along the extension direction of the gas inlet pipe 120 (i.e., the interval distance between adjacent gas inlet holes 121 is equal), and / or the plurality of gas inlet holes 121 are directed towards the inner wall of the furnace tube assembly 110.

[0061] In the above embodiments, by uniformly arranging the plurality of gas inlet holes 121, the gas inlet pipe 120 can uniformly release oxygen, thereby improving the uniformity of the gas field in the reaction chamber, and thus improving the uniformity of the product film thickness. By directing the plurality of gas inlet holes 121 towards the inner wall of the furnace tube assembly 110, the process gas released by the gas inlet pipe 120 can be prevented from directly blowing onto the product, thereby further improving the uniformity of the film.

[0062] In some embodiments, the diameter of the gas inlet pipe 120 (i.e., the diameter of the cross section) ranges from 0.25 inches to 0.5 inches.

[0063] Exemplarily, the diameter of the gas inlet pipe 120 is 0.25 inches.

[0064] In the above embodiments, by using the gas inlet pipe 120 with such a diameter, the process gas can be quickly delivered to the reaction chamber.

[0065] In some embodiments, the diameter of the gas inlet hole 121 (i.e., the diameter of the cross section) ranges from 1.5 mm to 2.5 mm.

[0066] Exemplarily, the diameter of the gas inlet hole 121 is 2 mm.

[0067] In the above embodiments, by using the gas inlet hole 121 with such a diameter, the process gas can be quickly delivered to the reaction chamber.

[0068] Figure 7Fig. 1 shows a schematic diagram of a processing apparatus according to an example embodiment of the present application.

[0069] Based on the same concept, as Figure 7 According to the same concept, the present application also provides a processing apparatus 300, which comprises the reaction furnace 100 and the gas supply device 200 according to any one of the above embodiments. The reaction furnace 100 is configured to process a product. The gas supply device 200 is in communication with the gas inlet assembly 130 of the reaction furnace and is configured to supply process gas to the gas inlet assembly 130.

[0070] Exemplarily, the product is a sheet material, such as a silicon wafer, a glass substrate, a wafer, etc.

[0071] The above describes the basic principles of the present application in combination with specific embodiments. However, it should be noted that the advantages, benefits, effects, etc. mentioned in the present application are only examples and are not limiting, and these advantages, benefits, effects, etc. cannot be considered as necessary for each embodiment of the present application. In addition, the above specific details are only for the purpose of example and understanding, and are not limiting, and the present application is not limited to the above specific details.

[0072] The block diagrams of the devices, apparatuses, equipment, systems involved in the present application are only illustrative examples and are not intended to require or imply that the connections, arrangements, configurations are as shown in the block diagrams. As those skilled in the art will recognize, these devices, apparatuses, equipment, systems can be connected, arranged, configured in any manner. Words such as "include", "contain", "have", etc. are open-ended words, mean "including but not limited to", and can be used interchangeably. The words "or" and "and" used herein mean the word "and / or", and can be used interchangeably, unless the context clearly indicates otherwise. The word "such as" used herein means the phrase "such as but not limited to", and can be used interchangeably.

[0073] It should also be noted that in the devices, equipment and methods of the present application, each component or each step can be decomposed and / or recombined. These decompositions and / or recombinations should be considered as equivalent solutions of the present application.

[0074] The above description of the disclosed aspects is provided to enable any person skilled in the art to make or use the present application. Various modifications to these aspects will be readily apparent to those skilled in the art, and the generic principles defined herein can be applied to other aspects without departing from the scope of the present application. Thus, the present application is not intended to be limited to the aspects shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

[0075] The foregoing description has been presented for purposes of illustration and description. Furthermore, this description is not intended to limit the embodiments of the application to the forms disclosed herein. Although various example aspects and embodiments have been discussed above, those of ordinary skill in the art will appreciate a variety of modifications, alternatives, permutations, additions, and sub-combinations, which fall within the scope of the application.

Claims

1. A reactor furnace characterized by, The furnace tube assembly comprises: a reaction chamber extending along a first horizontal direction; at least two gas inlet tubes arranged at a first end and a second end of the reaction chamber respectively, each of the gas inlet tubes having a side wall with at least one gas inlet hole; a gas inlet assembly extending into the reaction chamber from outside of the reaction chamber and communicating with the at least two gas inlet tubes, configured to provide process gas to the at least two gas inlet tubes.

2. The reactor of claim 1, wherein The at least two gas inlet tubes are arranged at a bottom and / or a top of the reaction chamber.

3. The reactor according to claim 1 or 2, characterized in that The gas inlet tubes extend along a second horizontal direction intersecting the first horizontal direction. In the case that the gas inlet tubes are arranged at the top of the reaction chamber, the gas inlet holes of the gas inlet tubes arranged at the top of the reaction chamber are directed downward. In the case that the gas inlet tubes are arranged at the bottom of the reaction chamber, the gas inlet holes of the gas inlet tubes arranged at the bottom of the reaction chamber are directed upward.

4. The reactor according to claim 1 or 2, characterized in that The reaction chamber has a first cross section perpendicular to the first horizontal direction, the first cross section has a circular shape, the gas inlet tubes have a second cross section perpendicular to the first horizontal direction, the second cross section has an arc shape, a curvature of the circular shape is the same as a curvature of the arc shape, the side wall of the gas inlet tube has a plurality of gas inlet holes arranged along an extension direction of the gas inlet tube, each of the gas inlet holes is directed toward a center of the second cross section of the gas inlet tube where the each of the gas inlet holes is located.

5. The reactor according to claim 1 or 2, characterized in that The reaction chamber has a first cross section perpendicular to the first horizontal direction, the first cross section has a circular shape, the gas inlet tubes have a second cross section perpendicular to the first horizontal direction, the second cross section has an annular shape, the side wall of the gas inlet tube has a plurality of gas inlet holes arranged along an extension direction of the gas inlet tube, each of the gas inlet holes is directed toward a center of the second cross section of the gas inlet tube where the each of the gas inlet holes is located.

6. The reactor according to claim 1 or 2, characterized in that The number of the gas inlet tubes is two. The gas inlet assembly comprises: a multi-pass tube having a first end communicating with the gas inlet tube arranged at the first end of the reaction chamber, a second end communicating with the gas inlet tube arranged at the second end of the reaction chamber, and a third end communicating with a gas supply device, the multi-pass tube being configured to receive process gas provided by the gas supply device and deliver the process gas to the two gas inlet tubes.

7. The reactor according to claim 1 or 2, characterized in that The side wall of the gas inlet tube has a plurality of gas inlet holes. The plurality of gas inlet holes are uniformly arranged along an extension direction of the gas inlet tube, and / or the plurality of gas inlet holes are directed toward an inner wall of the furnace tube assembly.

8. The reactor according to claim 1 or 2, characterized in that The gas inlet tube has a tube diameter ranging from 0.25 inch to 0.5 inch.

9. The reactor according to claim 1 or 2, characterized in that The gas inlet hole has a hole diameter ranging from 1.5 mm to 2.5 mm.

10. A processing apparatus characterized by comprising: The reaction furnace of any one of claims 1-9 is configured to process a product. The gas supply device communicates with the gas inlet assembly of the reaction furnace and is configured to provide process gas to the gas inlet assembly. ​

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