Air inlet device and deposition equipment

Abstract

The embodiment of the utility model discloses a gas inlet device and deposition equipment with the gas inlet device, a gas inlet pipe is connected with a spraying plate by arranging a gas inlet column, and reaction gas conveyed from the gas inlet pipe can be conveyed to the spraying plate through a plurality of gas inlet holes formed in the gas inlet column; the inner diameter of the air inlet hole is smaller than or equal to 1mm, so that the reaction gas can be inhibited from generating plasma in the air inlet hole, and the problem that particles of the film are abnormally heated along with the air inlet device is solved.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of semiconductor processing, and in particular, to an air inlet device and deposition equipment. BACKGROUND

[0002] Thin film deposition technology is a process method for depositing materials on the surface of a substrate to form a thin film, which is often used to prepare thin films of various materials. It has wide applications in the fields of electronic devices, optical devices, nanomaterials, etc. By controlling the conditions and parameters in the deposition process, thin film materials with different properties and functions can be obtained. Through thin film deposition technology, a thin film or coating can be formed on a substrate such as a wafer, which can block the external environment from damaging the wafer and stabilize the performance of the wafer.

[0003] Plasma-enhanced chemical vapor deposition (PECVD) is a method for preparing semiconductor thin film materials and other material thin films by using glow discharge to ionize in a deposition chamber and then depositing on a substrate. It enhances the activity of chemical vapor reaction substances through plasma activation, increases the surface reaction rate, and significantly reduces the thin film deposition temperature through high-energy ions. Under the action of plasma, the gas is dissociated in the chamber to form a strong reaction substance containing gas molecules, high-energy ions, electrons, and active radicals. On the deposition surface, not only the usual thermal chemical reaction exists, but also a complex plasma chemical reaction exists, and the deposition film is grown into a film under the joint action of the two chemical reactions.

[0004] In the current plasma-enhanced chemical vapor deposition device, a ceramic tube with a relatively high height is usually used as an air inlet device of a shower plate. This method limits the process power, gas pressure, and electrode plate spacing. Under certain combination conditions, abnormal discharge phenomenon easily occurs in the air inlet pipeline, which causes problems such as particles in the thin film and abnormal heating of the air inlet pipeline. SUMMARY

[0005] The purpose of the embodiments of the present application is to provide an air inlet device and deposition equipment that can inhibit the generation of plasma in the air inlet holes.

[0006] In a first aspect, the utility model provides an air inlet device, including air inlet pipe and with the air inlet pipe one end connection's air inlet post, the air inlet post is used for with the shower plate connection away from the air inlet pipe one end, wherein, the air inlet post sets up multiple air inlet holes, the inner diameter size of the air inlet hole is less than or equal to 1mm.

[0007] In an optional embodiment, the arrangement density of each air inlet hole gradually increases from the center axis of the air inlet post to the edge.

[0008] In an optional embodiment, a plurality of hole groups are arranged in sequence and spaced apart outwardly with the center axis of the air inlet column as the center, and each hole group contains a plurality of air inlet holes arranged in a circular array around the center axis of the air inlet column.

[0009] In adjacent two hole groups, the number of air inlet holes in the hole group close to the center axis of the air inlet column is less than the number of air inlet holes in the hole group away from the center axis of the air inlet column.

[0010] In an optional embodiment, the inner diameter size of the air inlet hole gradually increases along from the end of the air inlet column connected with the air inlet pipe to the end away from the air inlet pipe.

[0011] In an optional embodiment, at least one end surface of the air inlet column is axially outwardly convex, and the axial length of each air inlet hole gradually decreases from the center axis of the air inlet column to the edge.

[0012] In an optional embodiment, the air inlet pipe has an integrally formed honeycomb plate, the shape of the honeycomb plate is matched with the end surface of the air inlet column, and the honeycomb holes of the honeycomb plate are communicated with the air inlet holes.

[0013] In an optional embodiment, the inner diameter size of the honeycomb hole is less than the inner diameter size of the air inlet hole.

[0014] In an optional embodiment, the ratio of the inner diameter size of the honeycomb hole to the inner diameter size of the air inlet hole is less than or equal to 2.

[0015] In an optional embodiment, all the air inlet holes include a plurality of outer side holes, and each outer side hole is inclined outwardly along the radial direction of the air inlet column away from the part of the air inlet pipe.

[0016] In an optional embodiment, the inclination amplitude of each outer side hole gradually increases from the center axis of the air inlet column to the edge.

[0017] In a second aspect, the utility model provides a kind of deposition equipment, including cavity, spray plate and the air inlet device of any one of preceding embodiment;

[0018] The spray plate is fixed to the cavity, and the spray plate has a plurality of spray holes and a communication air inlet cavity.

[0019] The end of the air inlet column away from the air inlet pipe is connected with the spray plate, and each air inlet hole is communicated with the air inlet cavity.

[0020] The beneficial effects of the embodiments of the present application include:

[0021] The gas inlet pipe is connected with the spray plate by setting the gas inlet column, and the reaction gas transported from the gas inlet pipe can be sent to the spray plate through the plurality of gas inlet holes arranged on the gas inlet column, wherein since the inner diameter size of the gas inlet hole is less than or equal to 1 mm, the plasma generated in the gas inlet hole can be inhibited, so as to avoid the problems of particle following of the thin film and abnormal temperature rise of the gas inlet device. BRIEF DESCRIPTION OF DRAWINGS

[0022] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed to be used in the embodiments of the present application will be briefly introduced as follows. It should be understood that the following drawings only show some embodiments of the present application, and therefore should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can also be obtained without creative labor on the basis of these drawings.

[0023] Figure 1 a schematic diagram of a deposition device of the present application;

[0024] Figure 2 a top view of a gas inlet column in an embodiment;

[0025] Figure 3 a sectional view of a gas inlet column in an embodiment;

[0026] Figure 4 a sectional view of a gas inlet device in an embodiment;

[0027] Figure 5 a sectional view of a gas inlet column in an embodiment.

[0028] Figure legend: 100-chamber; 200-heating disc; 300-spray plate; 310-gas inlet cavity; 311-intermediate region; 312-lateral region; 320-spray hole; 400-gas inlet device; 410-gas inlet pipe; 411-honeycomb plate; 412-honeycomb hole; 420-gas inlet column; 421-gas inlet hole; 422-central region; 423-edge region; 424-intermediate hole; 425-lateral hole; 500-substrate. DETAILED DESCRIPTION

[0029] In order to make the purpose, technical solutions and advantages of the embodiments of the present application more clear, the technical solutions in the embodiments of the present application will be described clearly and completely in combination with the drawings in the embodiments of the present application. Obviously, the described embodiments are some of the embodiments of the present application, not all the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various different configurations.

[0030] In the description of the present application, it should be noted that the terms "inner", "outer" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship commonly used when the product of the present application is used, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application. In addition, the terms "first", "second" and the like are only used to distinguish the description and cannot be understood as indicating or implying relative importance.

[0031] In the description of the present application, it should be noted that unless otherwise explicitly specified and limited, the terms "set", "connected" should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or integrally connected; it can be directly connected, or indirectly connected through an intermediate medium, or it can be connected inside two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0032] Reference Figure 1 The embodiments of the present application disclose a deposition device, which comprises a cavity 100, a shower plate 300 and a heating disc 200 and a gas inlet device 400;

[0033] The heating disc 200 is located inside the cavity 100, serving as a carrier for semiconductor substrates such as wafers 500, and also serving to heat the substrates 500. The shower plate 300 is covered on the upper part of the cavity 100, opposite to the heating disc 200, and the gas inlet device 400 is used to connect the gas source providing the reaction gas with the shower plate 300, so as to be able to deliver the reaction gas to the shower plate 300, and then uniformly distribute the reaction gas through the shower plate 300, promote the generation and maintenance of plasma and ensure the deposition of high-quality thin films. Specifically, the shower plate 300 has a communication gas inlet cavity 310 and a plurality of spray holes 320; the gas inlet device 400 is fixed at the middle position of the top of the shower plate 300, so as to introduce the reaction gas into the gas inlet cavity 310, the shower plate 300 is connected to a high-frequency alternating current power supply to generate plasma in the reaction gas, and then reaches the upper part of the substrate 500 through the spray hole 320.

[0034] In one embodiment, the gas inlet device 400 comprises a gas inlet pipe 410 and a gas inlet column 420 connected to one end of the gas inlet pipe 410, and the end of the gas inlet column 420 away from the gas inlet pipe 410 is used to connect with the shower plate 300, wherein the gas inlet column 420 is provided with a plurality of gas inlet holes 421, each of which is in communication with the gas inlet cavity 310, and the inner diameter size of the gas inlet hole 421 is less than or equal to 1mm.

[0035] In this way, the reaction gas delivered from the gas inlet pipe 410 can be sent to the shower plate 300 through the plurality of gas inlet holes 421 provided on the gas inlet column 420, and the plasma generated in the gas inlet holes 421 can be inhibited due to the inner diameter of the gas inlet holes 421 being less than or equal to 1 mm, so as to avoid the problems of particles following the thin film and abnormal temperature rise of the gas inlet device 400.

[0036] The material of the gas inlet pipe 410 and the gas inlet column 420 is not limited in particular, as long as it has sufficient corrosion resistance and chemical stability. The gas inlet pipe 410 is generally a circular pipe, and the gas inlet column 420 is correspondingly a circular column.

[0037] Since the gas inlet device 400 is connected to the middle of the upper part of the shower plate 300, and since the flow rate of the reaction gas is slow near the wall of the gas inlet pipe 410 and fast in the central area far from the wall when the reaction gas flows in the gas inlet pipe 410, after the reaction gas enters the gas inlet cavity 310 of the shower plate 300, the flow rate of the reaction gas is generally larger in the middle area 311 of the gas inlet cavity 310 and the reaction gas holes 320 in this area, and smaller in the side area 312 of the gas inlet cavity 310 and the reaction gas holes 320 in this area, which can cause the thin film on the surface of the substrate 500 to be thicker in the middle and thinner at the edges, resulting in poor uniformity of the thin film thickness.

[0038] Therefore, in one embodiment, referring to Figure 2 The arrangement of the gas inlet holes 421 can be set such that the arrangement density of the gas inlet holes 421 gradually increases from the center axis of the gas inlet column 420 to the edge, i.e. from the center of the gas inlet column 420 to the outward radial direction, so that the reaction gas sprayed from the end of the gas inlet column 420 connected to the shower plate 300 has a phenomenon of slow flow rate in the center and small flow rate at the edges, so that more reaction gas flows to the side area 312 of the gas inlet cavity 310, which plays a role in uniformizing the gas flow in the gas inlet cavity 310, so that the gas flow rate from each of the reaction gas holes 320 is the same or similar, thereby improving the uniformity of the thin film thickness on the surface of the substrate 500.

[0039] In detail, all the gas inlet holes 421 include a plurality of hole groups spaced apart outward from the center axis of the gas inlet column 420, that is, a plurality of hole groups are spaced apart outward from the center axis of the gas inlet column 420, and each hole group includes a plurality of gas inlet holes 421 arranged in a circular array around the center axis of the gas inlet column 420; in the adjacent two hole groups, the number of gas inlet holes 421 in the hole group close to the center axis of the gas inlet column 420 is less than the number of gas inlet holes 421 in the hole group far from the center axis of the gas inlet column 420, which can make the distribution of the gas inlet holes 421 more uniform and better ensure the uniformity of the thin film thickness.

[0040] For example, in Figure 2 In the embodiment shown, the air intake column 420 is divided into a central region 422 and an edge region 423 surrounding the outer periphery of the central region 422. The number of air intake holes 421 in each ring of holes distributed in the central region 422 and the number of air intake holes 421 in each ring of holes distributed in the edge region 423 gradually increase radially outward along the central axis of the air intake column 420. At the same time, the density of air intake holes 421 distributed in the central region 422 is less than the density of air intake holes 421 distributed in the edge region 423.

[0041] Of course, in some embodiments, the air inlets 421 in the central region 422 are evenly distributed, and the air inlets 421 in the edge region 423 are evenly distributed. That is, the distribution density of the air inlets 421 in the central region 422 is consistent, and the distribution density of the air inlets 421 in the edge region 423 is also consistent. At the same time, the density of the air inlets 421 distributed in the central region 422 is less than the density of the air inlets 421 distributed in the edge region 423. This can also achieve the effect that the reaction gas passing through the air inlet column 420 has a small flow rate in the middle and a large flow rate at the edge.

[0042] refer to Figure 3 In one embodiment, the inner diameter of the air inlet 421 gradually increases from the end where the air inlet column 420 is connected to the air inlet pipe 410 to the end away from the air inlet pipe 410. In other words, the end of the air inlet 421 closer to the air inlet pipe 410 is the first end, and the end of the air inlet 421 away from the air inlet pipe 410 is the second end. The inner diameter of the first end is smaller than that of the second end. This can diffuse the reaction gas passing through the air inlet 421 and further improve the homogenization effect.

[0043] The inner diameter of the first end of the air inlet 421 must be greater than or equal to 0.1 mm, and the inner diameter of the second end must be less than or equal to 1 mm. That is, the inner diameter of the thinnest part of the air inlet 421 must be greater than or equal to 0.1 mm, and the inner diameter of the thickest part must be less than or equal to 1 mm.

[0044] Specifically, the shape of the air intake 421 can be frustum-shaped, concave frustum-shaped (flared), or convex frustum-shaped. The frustum-shaped shape means that the generatrix of the air intake 421 is a straight line. The flared shape means that the generatrix of the air intake 421 is a curve that bends toward the central axis of the air intake 421. The convex frustum-shaped shape means that the generatrix of the air intake 421 is a curve that bends away from the central axis of the air intake 421.

[0045] refer to Figure 4In one embodiment, at least one end surface of the air inlet column 420 is outwardly convex along the axial direction, and the convex shape is not limited in particular, and can be, for example, spherical, conical, or the like. The axial length of each air inlet hole 421 gradually decreases from the center axis of the air inlet column 420 toward the edge, so that the axial length of the air inlet hole 421 close to the center axis of the air inlet column 420 is large, and thus the flow resistance is also large, and the degree of flow speed reduction is also large, whereas the axial length of the air inlet hole 421 far from the center axis of the air inlet column 420 is small, and thus the flow resistance is also small, and the degree of flow speed reduction is also small, so that the air flow uniformity can also be improved.

[0046] Further, the air inlet pipe 410 has a honeycomb plate 411 integrally formed, and the shape of the honeycomb plate 411 is adapted to the end surface of the air inlet column 420, for example, the end of the air inlet column 420 close to the air inlet pipe 410 is outwardly convex, and the shape of the corresponding honeycomb plate 411 is a cover-shaped upward convex shape to cover the convex portion of the air inlet column 420. The honeycomb hole 412 of the honeycomb plate 411 communicates with the air inlet hole 421, and specifically, each honeycomb hole 412 communicates with one air inlet hole 421, that is, each honeycomb hole 412 communicates with the first end of one air inlet hole 421, and the inner diameter size of each honeycomb hole 412 is equal to the inner diameter size of the first end of the corresponding air inlet hole 421, so that the honeycomb plate 411 does not cover the air inlet hole 421, and the plasma moves in the reverse direction needs to pass through the air inlet hole 421 and the honeycomb hole 412, and the path is long, so that the generation of plasma in the air inlet device 400 can be better inhibited.

[0047] The shape of the honeycomb hole 412 can be a cylindrical hole as shown in the figure, and the honeycomb hole 412 is coaxially communicated with the first end of the air inlet hole 421 to be completely aligned.

[0048] The inner diameter size of the honeycomb hole 412 is smaller than the inner diameter size of the air inlet hole 421, that is, the inner diameter size of the thinnest portion of the honeycomb hole 412 is smaller than the inner diameter size of the thinnest portion of the air inlet hole 421, that is, the inner diameter size of the honeycomb hole 412 close to the end of the air inlet hole 421 is smaller than the inner diameter size of the air inlet hole 421 close to the end of the honeycomb hole 412, so that the plasma moving in the reverse direction to the honeycomb hole 412 will contact the end surface of the honeycomb plate 411 close to the air inlet column 420 to be consumed, so that the generation of plasma in the air inlet device 400 can be better inhibited.

[0049] The ratio of the inner diameter size of the honeycomb hole 412 to the inner diameter size of the inlet hole 421 is less than or equal to 2, and the ratio of the inner diameter size of the thinnest part of the honeycomb hole 412 to the inner diameter size of the thinnest part of the inlet hole 421 is less than or equal to 2, that is, the ratio of the inner diameter size of the end of the honeycomb hole 412 close to the inlet hole 421 to the inner diameter size of the end of the inlet hole 421 close to the honeycomb hole 412 is less than or equal to 2, so that the phenomenon of too small flow rate of reaction gas due to too large ratio can be avoided, and the film quality can be ensured.

[0050] Of course, in some embodiments, the honeycomb hole 412 can also be provided as a hole of other shapes according to actual needs. The inner diameter size of the thinnest part of the honeycomb hole 412 can also be greater than or equal to the inner diameter size of the thinnest part of the inlet hole 421. The honeycomb hole 412 can also be in communication with the first end of the inlet hole 421 in a non-axial manner.

[0051] In one embodiment, all the inlet holes 421 include a plurality of outer holes 425, with reference to Figure 5 Each outer hole 425 is inclined outward in the radial direction of the inlet column 420 away from the part of the inlet column 420, that is, the central axis of the outer hole 425 is not parallel to the central axis of the inlet column 420 in a part, so that the gas outlet direction of the outer hole 425 is deviated to the side area 312 of the inlet cavity 310, and the consistency of the flow rate in each spray hole 320 is better improved.

[0052] The inclined part can be curved or straight. In the direction from the central axis of the inlet column 420 to the edge, the inclination of each outer hole 425 gradually increases, so that the inclination of the outer hole 425 farther away from the central axis of the inlet column 420 is greater, so as to better transport the reaction gas to the edge area 423 of the inlet cavity 310 and improve the consistency of the film deposition thickness.

[0053] In addition, all the inlet holes 421 also include at least one intermediate hole 424, and all the outer holes 425 are surrounded outside all the intermediate holes 424. The axial length of the intermediate hole 424 is greater than the axial length of the outer hole 425, and the central axis of the intermediate hole 424 always keeps the same direction as the central axis of the inlet column 420. One of the intermediate holes 424 is coaxial with the inlet column 420, so as to greatly reduce the flow rate of the most central area of the inlet column 420.

[0054] To sum up, the embodiment of the present application discloses a gas inlet device 400 and a deposition equipment with the gas inlet device 400. The gas inlet pipe 410 is connected with the shower plate 300 by setting the gas inlet column 420. The reaction gas delivered from the gas inlet pipe 410 can be sent to the shower plate 300 through the plurality of gas inlet holes 421 arranged on the gas inlet column 420. Since the inner diameter size of the gas inlet hole 421 is less than or equal to 1 mm, the plasma generated in the gas inlet hole 421 can be inhibited, so as to avoid the problems of the particles following the thin film and the abnormal temperature rise of the gas inlet device 400. In addition, the flow distribution of the reaction gas in the gas inlet cavity 310 can be homogenized, so that the flow rates of the plurality of spray holes 320 are consistent, and the consistency of the thickness of the thin film is ensured.

[0055] It should be noted that the features in the embodiments of the present application can be combined with each other without conflict.

[0056] The above only is the preferred embodiment of the present application, and is not used to limit the present application. For those skilled in the art, the present application can have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. An air intake device, characterized in that, It includes an air inlet pipe (410) and an air inlet column (420) connected to one end of the air inlet pipe (410). The end of the air inlet column (420) away from the air inlet pipe (410) is used to connect to the spray plate (300). The air inlet column (420) is provided with a plurality of air inlet holes (421), and the inner diameter of the air inlet holes (421) is less than or equal to 1 mm.

2. The air intake device according to claim 1, characterized in that, The density of each air intake hole (421) gradually increases from the central axis of the air intake column (420) toward the edge.

3. The air intake device according to claim 2, characterized in that, Multiple rings of holes are arranged outward from the central axis of the air intake column (420), and each ring of holes contains multiple air intake holes (421) arranged in a circular array around the central axis of the air intake column (420). In two adjacent rings of holes, the number of air intake holes (421) in the ring closer to the central axis of the air intake column (420) is less than the number of air intake holes (421) in the ring farther from the central axis of the air intake column.

4. The air intake device according to any one of claims 1-3, characterized in that, Along the line from the end where the intake column (420) is connected to the intake pipe (410) to the end away from the intake pipe (410), the inner diameter of the intake port (421) gradually increases; And / or, At least one end face of the air intake column (420) protrudes outward along the axial direction, and the axial length of each air intake hole (421) gradually decreases from the central axis of the air intake column (420) towards the edge.

5. The air intake device according to any one of claims 1-3, characterized in that, The air intake pipe (410) has an integrally formed honeycomb plate (411), the shape of which is adapted to the end face of the air intake column (420), and the honeycomb holes (412) of the honeycomb plate (411) are connected to the air intake hole (421).

6. The air intake device according to claim 5, characterized in that, The inner diameter of the honeycomb hole (412) is smaller than the inner diameter of the air inlet (421).

7. The air intake device according to claim 6, characterized in that, The ratio of the inner diameter of the honeycomb hole (412) to the inner diameter of the air inlet (421) is less than or equal to 2.

8. The air intake device according to any one of claims 1-3, characterized in that, All air intake holes (421) include multiple outer holes (425), and the portion of each outer hole (425) away from the air intake pipe (410) is inclined outward along the radial direction of the air intake column (420).

9. The air intake device according to claim 8, characterized in that, From the central axis of the intake column (420) toward the edge, the inclination of each outer hole (425) gradually increases.

10. A deposition apparatus, characterized in that, It includes a cavity (100), a spray plate (300), and an air intake device as described in any one of claims 1-9; The spray plate (300) is fixed to the cavity (100), and the spray plate (300) has a communicating air inlet cavity (310) and a plurality of spray holes (320); The end of the air intake column (420) away from the air intake pipe (410) is connected to the spray plate (300), and each air intake hole (421) is connected to the air intake chamber (310).

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