Silicon carbide epitaxial furnace device comprising two-section type heat insulation barrel

Abstract

The utility model discloses a silicon carbide epitaxial furnace device comprising a two-section type heat insulation barrel, and belongs to the field of silicon carbide processing equipment. The device comprises an upper cavity and a lower cavity, an air inlet device is arranged at the top of the upper cavity, a two-section type heat insulation barrel is arranged in the upper cavity, the air inlet device is communicated with the two-section type heat insulation barrel, a heating area is arranged on the outer side of the two-section type heat insulation barrel, the two-section type heat insulation barrel comprises an upper heat insulation barrel body and a lower heat insulation barrel body, and the upper heat insulation barrel body and the lower heat insulation barrel body are connected through a detachable connecting structure; a rotating device is arranged in the lower cavity, and an epitaxial growth region is mounted on the rotating device. The two-section type heat insulation barrel is adopted to replace a traditional integrated heat insulation barrel, only the lower heat insulation barrel needs to be replaced during periodic replacement, the height of spare parts of the lower heat insulation barrel is reduced after segmentation, and the material cost caused by the size of the whole spare parts is saved by more than half; meanwhile, due to the remarkable cost advantage, the period of replacing the lower heat insulation barrel is greatly shortened, and the product surface yield is better considered.

Description

TECHNICAL FIELD

[0001] The utility model relates to silicon carbide processing device field, concretely relates to a kind of silicon carbide epitaxial furnace device including two-section heat insulation barrel. BACKGROUND

[0002] Silicon carbide (SiC) is a very promising semiconductor material, suitable for high power and high temperature devices. For vertical epitaxial furnace, the source gas outlet and the epitaxial wafer growth area usually have a higher distance to prevent the source gas port from pre-reaction caused by too close distance, avoid the outlet from being blocked and the possible pre-reaction falling. The intermediate passage between the source gas outlet and the reaction area is an upper cavity heat insulation barrel, which is usually made of graphite-coated silicon carbide material. The bottom of the upper heat insulation barrel is close to the reaction area and has a higher temperature, causing the source gas to react on the sidewall of the barrel bottom. As the growth cycle increases, the sidewall attachments become thicker, eventually causing the attachments to fall and affect the surface of the epitaxial wafer. To prevent the surface from being affected, the upper heat insulation barrel needs to be replaced periodically. Due to the high overall size of the upper heat insulation barrel, the cost of replacing new products is high, and it is urgent to reduce this cost for mass production.

[0003] Therefore, the current one-piece heat insulation barrel has the following problems: ① Cost: As the growth cycle increases, the bottom heat insulation barrel pre-reaction product accumulates, and excessive accumulation causes particles to fall, affecting the surface of the epitaxial wafer, making the heat insulation barrel cycle shorter and requiring frequent replacement. The cost of spare parts is high, and the cost disadvantage is large in mass production. SUMMARY

[0004] The present utility model aims to provide a silicon carbide epitaxial furnace device including two-section heat insulation barrel with low use cost and high epitaxial wafer yield to solve the technical problems of the prior art.

[0005] Technical solution: The silicon carbide epitaxial furnace device including two-section heat insulation barrel comprises an upper cavity and a lower cavity located below the upper cavity. The top of the upper cavity is provided with an air inlet device, and the inside of the upper cavity is provided with a two-section heat insulation barrel. The air inlet device is in communication with the two-section heat insulation barrel. The outer side of the two-section heat insulation barrel is provided with a heating zone. The two-section heat insulation barrel comprises an upper heat insulation barrel and a lower heat insulation barrel, which are connected by a detachable connection structure. The inside of the lower cavity is provided with a rotating device, and the rotating device is installed with an epitaxial growth zone. The lower side of the epitaxial growth zone is provided with an epitaxial heating zone.

[0006] The two-section heat insulation barrel functions as follows: ① blocking part of the heating wire heat; ② binding the source gas flow; and ③ attaching the pre-reaction product.

[0007] Further, the upper heat insulation barrel is provided with a plurality of notch structures, and the lower heat insulation barrel is provided with a plurality of protruding structures, the protruding structures and the notch structures correspond to each other to form a rotary sealing connection.

[0008] Further, the height ratio of the upper heat insulation barrel and the lower heat insulation barrel is 6-7:3-4, preferably 6:4.

[0009] Further, the two-section heat insulation barrel is made of high-temperature-resistant material, graphite material or non-graphite material, and any single crystal or composite material with good uniformity.

[0010] Further, the inner side of the upper cavity is provided with a heat insulation layer.

[0011] Further, the heating zone is provided with a partition heating wire.

[0012] Further, the outer extension heating zone is provided with a heating wire.

[0013] Beneficial effects: compared with the prior art, the utility model has the following advantages: the utility model discloses a two-section heat insulation barrel instead of a traditional integrated heat insulation barrel, the temperature gradually increases from the source gas outlet to the reaction zone based on the different temperatures of the upper cavity, the pre-reaction product is mainly concentrated in the bottom region of the upper heat insulation barrel, the integrated heat insulation barrel is designed into two parts, and the upper and lower heat insulation barrels are connected through buckles; only the lower heat insulation barrel needs to be replaced during periodic replacement; in terms of cost: the height of the spare part of the lower heat insulation barrel is reduced after segmentation, and the material cost caused by the size of the overall spare part is saved by more than half; in addition, the heat insulation barrel is more convenient to polish by machine after the volume of the lower heat insulation barrel is reduced, and the rework cost is greatly reduced; in terms of the yield of the epitaxial wafer: due to the significant cost advantage, the replacement cycle of the lower heat insulation barrel is greatly shortened, and the surface yield of the product is better balanced. BRIEF DESCRIPTION OF DRAWINGS

[0014] Figure 1 The structure schematic view of the silicon carbide epitaxial furnace device provided by the utility model comprises a two-section heat insulation barrel;

[0015] Figure 2 The structure schematic view of the two-section heat insulation barrel;

[0016] Figure 3 The top view of the two-section heat insulation barrel, the left is the top view of the upper heat insulation barrel, and the right is the top view of the lower heat insulation barrel;

[0017] Figure 4 The schematic view of the detachable connection structure in the two-section heat insulation barrel;

[0018] Figure 5 The surface defect amount measurement result graph of the silicon carbide epitaxial film prepared by the silicon carbide epitaxial furnace device adopting the two-section heat insulation barrel in embodiment 1.

[0019] Figure 6 The figure shows the measurement results of surface defects of silicon carbide epitaxial films prepared by the silicon carbide epitaxial furnace apparatus with an integrated heat-insulating barrel in Comparative Example 1. Detailed Implementation

[0020] The present invention will now be further described in conjunction with specific embodiments and accompanying drawings.

[0021] Example 1: As Figure 1 As shown, the silicon carbide epitaxial furnace device including a two-section heat insulation barrel provided by this utility model includes an upper cavity 1 and a lower cavity 2 located below the upper cavity 1; the top of the upper cavity 1 is an air inlet device 11, and the interior is provided with a two-section heat insulation barrel 12 made of high temperature resistant material, with a heat insulation layer 14 on the inner side; the air inlet device 11 is connected to the two-section heat insulation barrel 12, and a heating zone is provided on the outer side of the two-section heat insulation barrel 11, with partitioned heating wires 13 in the heating zone.

[0022] The lower cavity 2 is equipped with a rotating device 23, an epitaxial growth region 21 is mounted on the rotating device 23, an epitaxial heating region is located below the epitaxial growth region 21, and a heating wire 22 is located in the epitaxial heating region.

[0023] like Figure 2 The two-section heat insulation barrel 12 includes an upper heat insulation barrel 121 and a lower heat insulation barrel 123, which are connected by a detachable connection structure 123.

[0024] like Figures 3-4 As shown, the detachable connection structure 123 includes three notch structures (blue) on the upper insulation barrel and three protrusion structures (red) on the lower insulation barrel. The protrusion structures and notch structures correspond one-to-one to form a rotary sealing connection. During installation, the red and blue parts are aligned and rotated to lock into the internal groove. When replacing, simply rotate to remove.

[0025] When the total height of the two-section heat insulation barrel 12 is 40cm, and the height ratio of the upper heat insulation barrel 121 to the lower heat insulation barrel 123 is 6:4, the surface defect measurement results of the silicon carbide epitaxial film are as follows: Figure 5 As shown, using the SemiLab SICA measurement equipment, it can be seen that there are very few surface defects on the silicon carbide epitaxial film.

[0026] Comparative Example 1: A one-piece heat insulation barrel was used to replace the two-section heat insulation barrel in Example 1. The surface defect diagram of the prepared silicon carbide epitaxial film is shown below. Figure 6 As shown, the Triangle and DF_Triangle are caused by the fall of the pre-reaction product from the upper heat insulation barrel. It can be seen that the surface defects of the silicon carbide epitaxial film are significantly increased compared to Example 1.

[0027] From above can know, in the utility model, two -section type heat -insulated bucket can improve silicon carbide epitaxial wafer falling object defect and raise yield, reduce the cost of spare parts replacement simultaneously.

Claims

1. A silicon carbide epitaxial reactor apparatus comprising a two-section insulated barrel, characterized in that, The utility model relates to a double -cavity type epitaxial growth device, including upper cavity and be located below the lower cavity of upper cavity, the top of upper cavity is air inlet device, is equipped with two -stage heat -insulating bucket inside, air inlet device communicates with two -stage heat -insulating bucket, the outside of two -stage heat -insulating bucket is provided with heating area, two -stage heat -insulating bucket includes upper heat -insulating bucket and lower heat -insulating bucket, and upper heat -insulating bucket and lower heat -insulating bucket are connected through detachable connecting structure, the inside of lower cavity is equipped with rotating device, and rotating device is installed with epitaxial growth area below epitaxial growth area, is equipped with epitaxial heating area.

2. The silicon carbide epitaxial reactor apparatus comprising a two-section insulated barrel of claim 1, wherein, In the two -stage heat -insulating bucket, a plurality of aperture structures are formed on the upper heat -insulating bucket, and a plurality of convex structures are formed on the lower heat -insulating bucket, the convex structures and the aperture structures form a rotating sealing connection one by one.

3. The silicon carbide epitaxial reactor apparatus comprising a two-section insulated barrel of claim 1, wherein, The height ratio of the upper heat -insulating bucket and the lower heat -insulating bucket is 6-7:3-4.

4. The silicon carbide epitaxial reactor apparatus comprising a two-section insulated barrel of claim 3, wherein, The height ratio of the upper heat -insulating bucket and the lower heat -insulating bucket is 6:

4.

5. The silicon carbide epitaxial reactor apparatus comprising a two-section insulated barrel of claim 1, wherein, The two -stage heat -insulating bucket is made of high -temperature resistant material.

6. The silicon carbide epitaxial reactor apparatus comprising a two-section insulated barrel of claim 1, wherein, The inner side of the upper cavity has a heat -insulating layer.

7. The silicon carbide epitaxial reactor apparatus comprising a two-section insulated barrel of claim 1, wherein, The heating area is provided with a partition heating wire.

8. The silicon carbide epitaxial reactor apparatus comprising a two-section insulated barrel of claim 1, wherein, The epitaxial heating area is provided with a heating wire.

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