Radio frequency grounding mechanism and thin film deposition equipment thereof

Abstract

The utility model discloses a radio frequency grounding mechanism and a thin film deposition device thereof, the radio frequency grounding mechanism comprises a process chamber and a spraying disc arranged in the process chamber, and the spraying disc is electrically connected with a radio frequency power supply; wherein the spraying disc is further provided with a parallel resonance circuit grounding unit, and the parallel resonance circuit grounding unit is used for quickly grounding and releasing charges gathered on the spraying disc. Wherein the parallel resonance circuit grounding unit comprises a capacitor and an inductor which are connected in parallel, and one end of the capacitor and one end of the inductor are grounded. According to the radio frequency grounding mechanism and the thin film deposition equipment thereof, the spraying disc serving as the upper electrode is grounded by adopting the parallel resonance circuit grounding unit, so that charges accumulated on the upper electrode are quickly released to the ground, particle influence caused by charge accumulation is avoided, the processing mode is simple and reliable, and the service life of the radio frequency grounding mechanism is prolonged. And the influence of charges on the electrode and a thin film deposition process can be obviously reduced.

Description

TECHNICAL FIELD

[0001] The utility model relates to thin film deposition equipment technical field especially relates to a radio frequency ground mechanism and thin film deposition equipment thereof. BACKGROUND

[0002] In PECVD (plasma enhanced chemical vapor deposition) equipment, radio frequency power is fed into a thin film deposition chamber by a shower plate arranged in a process chamber, and a radio frequency lower electrode is arranged in a heating plate to ground the radio frequency, thereby releasing the charge accumulated by the electrode and preventing the particle problem caused by charge accumulation, which affects the deposition quality of the thin film layer. However, in the plasma enhanced chemical deposition process, there is a DC bias effect, which causes a large amount of charge to accumulate at the upper electrode (i.e. the shower plate) at the end of the process, thereby causing particles in the next process and affecting the thin film deposition quality. SUMMARY

[0003] The utility model aims at overcoming the insufficient of prior art, provides a radio frequency ground mechanism and thin film deposition equipment thereof to solve the technical problem that the existing upper electrode may accumulate charge to cause particle problem.

[0004] To achieve the above-mentioned purpose, the utility model adopts the following technical scheme:

[0005] In the first aspect, the embodiment of the utility model provides a radio frequency ground mechanism, which comprises a process chamber and a shower plate arranged in the process chamber, and the shower plate is electrically connected to a radio frequency power supply; wherein a parallel resonance circuit grounding unit is further arranged on the shower plate, and the parallel resonance circuit grounding unit is used to quickly ground and release the charge accumulated on the shower plate.

[0006] Among them, the parallel resonance circuit grounding unit comprises: parallel capacitor and inductor, one end of the capacitor and the inductor is grounded.

[0007] Among them, the capacitance value range of the capacitor is: 50pF-100pF.

[0008] Among them, the inductance value range of the inductor is: 300uH-400uH.

[0009] Among them, the radio frequency ground mechanism further comprises: a heating plate arranged in the process chamber, the shower plate is located above the heating plate, the heating plate is provided with a receiving electrode, and an ionization electric field is formed between the receiving electrode and the shower plate.

[0010] Among them, a matching device is further arranged between the shower plate and the radio frequency power supply, and the matching device is used to match the output power of the radio frequency power supply to the shower plate.

[0011] The heating disc is further electrically connected to a grounding unit, and the grounding unit comprises a grounding capacitor.

[0012] The process chamber further comprises an electrostatic chuck, and the electrostatic chuck is connected to an electrostatic power supply.

[0013] The electrostatic power supply and the electrostatic chuck are further connected to an AC filter.

[0014] In a second aspect, the embodiments of the utility model provide a thin film deposition equipment, the thin film deposition equipment includes the radio frequency ground connection mechanism of any one described above.

[0015] The radio frequency ground connection mechanism and the thin film deposition equipment thereof can quickly release the electric charge accumulated on the upper electrode to the ground, avoid the influence of the particles caused by the accumulation of the electric charge, and obviously reduce the influence of the electric charge on the electrode and the thin film deposition process.

[0016] The above description is only a summary of the technical scheme of the utility model, in order to more clearly understand the technical means of the utility model, can be implemented according to the content of the specification, and in order to let the above and other purposes, characteristics and advantages of the utility model can be more obvious and easy to understand, the following preferred embodiments are described in detail as follows. BRIEF DESCRIPTION OF DRAWINGS

[0017] Fig. 1 It is a structural schematic diagram of the radio frequency ground connection mechanism of the embodiments of the utility model.

[0018] Fig. 2 It is an equivalent circuit diagram of the radio frequency ground connection mechanism of the embodiments of the utility model.

[0019] Mark explanation:

[0020] Radio frequency ground connection mechanism 100, process chamber 1, spray tray 2, matcher 3, radio frequency power supply 4, wafer 5, electrostatic chuck 6, heating disc 7, AC filter 8, electrostatic filter 9, electrostatic power supply 10, parallel resonant circuit grounding unit 11. DETAILED DESCRIPTION

[0021] In order to make the purpose, technical scheme and advantages of the utility model more clear and obvious, the utility model is further described in detail below in combination with the drawings and specific embodiments.

[0022] Clearly and completely describe the technical scheme in the embodiments of the utility model with the drawings in the embodiments of the utility model, obviously, the described embodiments are only some embodiments of the utility model, not all embodiments. Based on the embodiments in the utility model, all other embodiments obtained by the person skilled in the art without making creative efforts belong to the scope of protection of the utility model.

[0023] In the description of the utility model, it is understood that the orientation or positional relationship indicated by the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise" and the like are the orientation or positional relationship described based on the drawings, and are only for the convenience of describing the utility model and simplifying the description, and therefore cannot be understood as indicating or implying that the devices or elements indicated must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the utility model.

[0024] In addition, the terms "first" and "second" are only for the purpose of description, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features limited by "first" and "second" can explicitly or implicitly include one or more of the features. In the description of the utility model, the meaning of "multiple" is two or more, unless otherwise explicitly specified and limited.

[0025] In the utility model, unless otherwise explicitly specified and limited, the terms "mounting", "connection", "connection", "fixing" and the like should be understood broadly, for example, it can be connected, or it can be detachably connected, or it can be integrated; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium; it can be the communication or interaction relationship between two elements. For the person skilled in the art, the specific meaning of the above terms in the utility model can be understood according to the specific situation.

[0026] In the utility model, unless otherwise explicitly specified and limited, the "upper" or "lower" of the first feature to the second feature can include that the first and second features are in direct contact, or the first and second features are not in direct contact but are in contact through another feature between them. Moreover, the "upper", "upper" and "upper" of the first feature to the second feature include that the first feature is directly above and obliquely above the second feature, or only indicates that the horizontal height of the first feature is higher than that of the second feature. The "below", "below" and "below" of the first feature to the second feature include that the first feature is directly below and obliquely below the second feature, or only indicates that the horizontal height of the first feature is less than that of the second feature.

[0027] In the description of the present specification, the description of the terms "one embodiment", "some embodiments", "an example", "a specific example", or "some examples" and the like means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In the present specification, the illustrative description of the above terms should not be understood as necessarily referring to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0028] In a PECVD (Plasma Enhanced Chemical Vapor Deposition) device, RF power is fed into a thin film deposition chamber by a showerhead disposed in a process chamber, and a RF lower electrode is disposed in a heater plate for grounding the RF, so as to release the accumulated charge of the electrode and prevent the particle problem caused by the charge accumulation from affecting the deposition quality of the coating layer. However, in the plasma enhanced chemical deposition process, there is a DC bias effect, which causes a large amount of charge to accumulate at the upper electrode (i.e. the showerhead) at the end of the process, thereby causing particles to be generated in the next process and affecting the thin film deposition quality. In order to solve the above problem, the present embodiment discloses a RF grounding mechanism 100.

[0029] Please refer to Figs. 1-2 In this embodiment, the present embodiment discloses a RF grounding mechanism 100 applied to a thin film deposition device of a semiconductor, for quickly releasing the accumulated charge on the RF electrode, so as to reduce the influence of the charge on the electrode. The RF grounding mechanism 100 comprises a process chamber 1 and a showerhead 2 disposed in the process chamber 1, and the showerhead 2 is electrically connected to a RF power supply 4; wherein the showerhead 2 is further provided with a parallel resonance circuit grounding unit 11, and the parallel resonance circuit grounding unit 11 is used for quickly grounding and releasing the accumulated charge on the showerhead 2.

[0030] Specifically, the parallel resonance circuit grounding unit 11 comprises a parallel capacitor and inductor, and one end of the capacitor and the inductor is grounded. In the prior art, the showerhead 2 adopts resistance grounding, but the resistance and the capacitor in the RF circuit form an RC delay circuit, which increases the release time of the accumulated charge on the electrode, thereby causing damage to the electrode and affecting the cleanliness of the process chamber 1. In the present embodiment, the grounding resistance is replaced by a parallel capacitor and inductor, and the resistance of the inductor to direct current is almost zero, so the charge can be quickly released from the inductor through grounding, and the capacitor can filter, thereby avoiding the influence of external electrical signals on the RF signal.

[0031] Among them, the capacitance value of the capacitor ranges from 50pF to 100pF.

[0032] The inductance value of the inductor ranges from 300 to 400 muH.

[0033] It should be noted that the above capacitance and inductance ranges are for a single frequency of 13.56 Mhz. If it is a dual-frequency PECVD (Plasma Enhanced Chemical Vapor Deposition), such as 13.56 Mhz + 400 kHz, a dual-pole parallel resonance circuit can also be used in parallel. The capacitance and inductance ranges of the first-stage resonance circuit remain unchanged, and the capacitance range of the second-stage resonance circuit can be selected from 200 pF to 500 pF. The inductance range can be selected from 2 mH to 3 mH (for 400 kHz).

[0034] Please refer to Fig. 1 and Fig. 2 , the radio frequency grounding mechanism 100 further comprises a heating disc 7 arranged in the process chamber 1, the shower plate 2 is located above the heating disc 7, the heating disc 7 is provided with a receiving electrode, and an ionization electric field is formed between the receiving electrode and the shower plate 2. The wafer 5 is located in the thin film deposition chamber between the shower plate 2 and the heating disc 7, the process gas is sprayed from the shower plate 2 into the cavity of the process chamber 1, is ionized by the radio frequency circuit to form plasma, and reacts with the wafer surface to form a specific thin film.

[0035] In the embodiment, the shower plate 2 also serves as the upper electrode of the radio frequency, the radio frequency is fed into the process chamber 1 from the upper electrode, and for different process gases, the required radio frequency power is also different. Therefore, the output power of the radio frequency power supply 4 is adjusted by the power-adjusting matching device 3, so as to adapt to the ionization of different process gases.

[0036] The heating disc 7 is also electrically connected to a grounding unit, and the grounding unit comprises a grounding capacitor, that is, the heating disc 7 is directly grounded by the capacitor.

[0037] In the embodiment, the shower plate 2 also serves as the upper electrode of the radio frequency, the radio frequency is fed into the process chamber 1 from the upper electrode, and for different process gases, the required radio frequency power is also different. Therefore, the output power of the radio frequency power supply 4 is adjusted by the power-adjusting matching device 3, so as to adapt to the ionization of different process gases.

[0038] As shown in Fig. 1 , the electrostatic power supply 10 and the electrostatic chuck 6 are further provided with an alternating current filter 8 and an electrostatic filter 9.

[0039] In the embodiment, the shower plate 2 also serves as the upper electrode of the radio frequency, the radio frequency is fed into the process chamber 1 from the upper electrode, and for different process gases, the required radio frequency power is also different. Therefore, the output power of the radio frequency power supply 4 is adjusted by the power-adjusting matching device 3, so as to adapt to the ionization of different process gases.

[0040] The embodiment further discloses a thin film deposition device comprising the radio frequency grounding mechanism 100 as described above.

[0041] Thin film deposition techniques are used to manufacture thin films for microelectronic devices, forming deposits on a substrate, common thin film deposition techniques include physical vapor deposition, chemical vapor deposition and other techniques. With the continuous development of semiconductor technology nodes, in the field of semiconductors, thin film deposition is a crucial process, which directly affects the performance and reliability of semiconductor devices. The process parameters of thin film deposition include substrate temperature, gas flow, pressure, power, etc. The selection and control of these parameters directly affect the quality and performance of the thin film. However, there is a mutual influence and constraint relationship between the process parameters of thin film deposition, so they need to be finely controlled and adjusted.

[0042] Semiconductor processing equipment for plasma treatment of semiconductor wafers, such as PECVD (plasma enhanced chemical vapor deposition) process, is often referred to as a radio frequency (RF) system. Such systems include RF control circuitry, the core function of which is to provide RF signals to the electrodes of the semiconductor processing equipment. These signals generate electric fields in the specific processing area of the processing chamber. When the reaction gas is ionized under the action of the electric field, it will react with the wafer to be processed, and these reactions may involve etching or deposition processes.

[0043] Semiconductor processing equipment, such as a 4.6 GHz PECVD radio frequency system, imports radio frequency from a showerhead 2. The equipment for performing semiconductor process treatment includes at least a counter-process chamber 1, a showerhead 2, a heating plate 7, a radio frequency power supply 4, and a heating plate radio frequency electrode, and other main components.

[0044] The counter-process chamber 1 is a sealed chamber that can provide a stable process environment for the wafer 5 to be processed.

[0045] The showerhead 2 is located inside the counter-process chamber 1 and is used to provide reaction gas to the wafer 5 to be processed. During the operation of the equipment, the reaction gas is sprayed onto the substrate to be processed through the showerhead 2, causing a chemical reaction with the substances on the surface of the wafer 5 to be processed, thereby achieving the purpose of process treatment.

[0046] The design of the showerhead 2 also takes into account the flow and distribution of the gas to ensure that the gas can uniformly cover the entire surface of the wafer 5 to be processed.

[0047] The heating plate 7 is another important component, located below the showerhead 2, which can provide a suitable heating environment for the wafer 5 to be processed, so that the wafer 5 to be processed reaches the required temperature for the process. This heating method can achieve efficient and uniform heat distribution, and ensure the thermal stability and reliability of the wafer 5 to be processed.

[0048] To enhance the efficiency and stability of the process, the semiconductor processing equipment 100 also adopts the design of the RF power supply 4 and the heating disc RF electrode. The RF power supply 4 provides RF power to the showerhead 2 through the RF matcher, and forms an electric field between the showerhead 2 and the heating disc 7. This electric field can promote the chemical reaction of the reaction gas on the surface of the substrate to be processed, and control the reaction rate and effect.

[0049] The RF grounding mechanism and the thin film deposition equipment thereof of the embodiment can quickly release the electric charge accumulated on the upper electrode to the ground by grounding the showerhead as the upper electrode through the parallel resonant circuit grounding unit, avoid the particle influence caused by the charge accumulation, and obviously reduce the influence of the charge on the electrode and the thin film deposition process.

[0050] The above only further illustrates the technical content of the utility model with examples, so that the reader can more easily understand, but does not represent that the embodiment of the utility model is limited to this, any technical extension or re-creation made according to the utility model is protected by the utility model. The protection scope of the utility model is subject to the claims.

Claims

1. A radio frequency grounding mechanism, characterized by, The application relates to a thin film deposition device, which comprises a process chamber and a shower plate arranged in the process chamber, the shower plate being electrically connected to a radio frequency power source; wherein a parallel resonant circuit grounding unit is further arranged on the shower plate, and the parallel resonant circuit grounding unit is used for quickly grounding and releasing the electric charges accumulated on the shower plate.

2. The radio frequency grounding mechanism of claim 1, wherein, The parallel resonant circuit grounding unit comprises a capacitor and an inductor in parallel, and one end of the capacitor and the inductor is grounded.

3. The radio frequency grounding mechanism of claim 2, wherein, The capacitance of the capacitor ranges from 50 pF to 100 pF.

4. The radio frequency grounding mechanism of claim 2, wherein, The inductance of the inductor ranges from 300 mu H to 400 mu H.

5. The radio frequency grounding mechanism according to any one of claims 1 to 4, wherein The radio frequency grounding mechanism further comprises a heating plate arranged in the process chamber, the shower plate is located above the heating plate, the heating plate is provided with a receiving electrode, and an ionization electric field is formed between the receiving electrode and the shower plate.

6. The radio frequency grounding mechanism of claim 5, wherein, A matching device is further arranged between the shower plate and the radio frequency power source, and the matching device is used for matching the output power of the radio frequency power source to the shower plate.

7. The radio frequency grounding mechanism of claim 6, wherein, The heating plate is further electrically connected to a grounding unit, and the grounding unit comprises a grounding capacitor.

8. The radio frequency grounding mechanism of claim 7, wherein, An electrostatic chuck is further arranged in the process chamber, and the electrostatic chuck is externally connected to an electrostatic power source.

9. The radio frequency grounding mechanism of claim 8, wherein, An alternating current filter is further arranged between the electrostatic power source and the electrostatic chuck.

10. A thin film deposition apparatus, characterized by, The thin film deposition device comprises the radio frequency grounding mechanism according to any one of claims 1 to 9.

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