Power supply lead-in assembly and vapor deposition device

Abstract

The embodiment of the utility model discloses a power supply lead-in assembly and a vapor deposition device. The power supply lead-in assembly comprises a lead-in part and a power supply lead-in part, the connector is connected with a power supply; a conductive plate; the sleeve is sleeved on the periphery of the leading-in part; the plurality of adjusting blocks are at least partially positioned between the conductive plate and the leading-in part; the multiple adjusting blocks are distributed on the outer side of the leading-in part in the circumferential direction of the leading-in part. The fixing shafts are distributed on the outer side of the leading-in part at intervals in the circumferential direction of the leading-in part; each adjusting block is connected with at least one fixing shaft, the adjusting blocks are configured to rotate around a rotating shaft parallel to the conductive plate, and the adjusting blocks rotate around the fixing shafts connected with the adjusting blocks.

Description

TECHNICAL FIELD

[0001] Embodiments of the present disclosure relate to the technical field of semiconductor technology, and in particular, to a power supply introduction assembly and a vapor deposition device. BACKGROUND

[0002] Some physical vapor deposition (PVD) processes can vaporize a target material into gaseous atoms, molecules, or ions by physical methods or high-energy particle bombardment under vacuum or near-vacuum conditions, and then deposit a thin film of some components of the target material on a substrate surface through a low-pressure gas (or plasma) process.

[0003] As the main equipment for applying physical vapor deposition technology, vapor deposition devices are constantly updated and developed to meet the needs of advanced semiconductor process. For example, radio frequency (RF) power or even very high frequency (VHF) power is introduced in PVD to improve ionization rate and increase hole filling capacity. However, too high a frequency causes current transmission asymmetry due to the effects of resistance, parasitic capacitance, and concentration on the surface of the conductor when transmitting in the conductor, which in turn affects the uniformity of the PVD thin film. Therefore, there is still room for improvement in vapor deposition devices. CONTENT OF THE INVENTION

[0004] According to some aspects of the embodiments of the present disclosure, a power supply introduction assembly is provided, which includes: an introduction part; a power supply configured to be connected; a conductive plate; a sleeve set on the outer periphery of the introduction part; a plurality of adjustment blocks distributed along the circumference of the introduction part on the outside of the introduction part; wherein at least part of the adjustment blocks are located between the conductive plate and the introduction part; a plurality of fixed shafts are spaced apart and distributed along the circumference of the introduction part on the outside of the introduction part; each adjustment block is connected to at least one fixed shaft, the adjustment block is configured to rotate around a rotation axis parallel to the conductive plate, and the adjustment block rotates around the fixed shaft connected thereto.

[0005] In some embodiments, the power supply introduction assembly further includes: a fixed shaft extending in a direction parallel to the conductive plate; the fixed shaft penetrates the adjustment block in a direction parallel to the conductive plate; the fixed shaft serves as a rotation axis for the rotation of the adjustment block, and the fixed shaft is configured to rotate the adjustment block.

[0006] In some embodiments, at least part of the fixed shafts are located between the conductive plate and the introduction part; one end of at least part of the fixed shafts is connected to the conductive plate, and the other end of at least part of the fixed shafts is connected to the introduction part.

[0007] In some embodiments, the power supply introduction assembly comprises a ring-shaped adjustment region surrounding the introduction portion, and a plurality of adjustment blocks corresponding to the ring-shaped adjustment region and arranged along a circumferential direction surrounding the introduction portion.

[0008] In some embodiments, the ring-shaped adjustment region comprises a plurality of sub-adjustment regions arranged in sequence, and the power supply introduction assembly comprises a plurality of adjustment block groups, each of which is arranged corresponding to each of the sub-adjustment regions; adjacent adjustment block groups are separated by a part of the conductive plate; each of the adjustment block groups comprises a plurality of adjustment blocks arranged along a circumferential direction surrounding the introduction portion; and part of the adjustment block groups are located between the conductive plate and the introduction portion, and part of the adjustment block groups are located in the conductive plate.

[0009] In some embodiments, the power supply introduction assembly further comprises a mounting hole penetrating the introduction portion in a direction perpendicular to the conductive plate, and / or the mounting hole penetrates the conductive plate in a thickness direction of the conductive plate.

[0010] In some embodiments, the mounting hole at least comprises a first mounting hole penetrating the introduction portion, and the first mounting hole is located at the center of the introduction portion; the power supply introduction assembly further comprises an introduction rod extending in a direction perpendicular to the conductive plate; one end of the introduction rod is arranged in the first mounting hole and connected with an inner side wall of the first mounting hole; and the introduction portion is connected to a power supply through the introduction rod.

[0011] In some embodiments, the power supply introduction assembly further comprises a back plate located on one side of the conductive plate in a thickness direction; a side surface of the back plate away from the conductive plate is used to carry and connect a target material; and a conductive member is located between the conductive plate and the back plate; one end of the conductive member is connected with the conductive plate, and the other end is connected with the back plate.

[0012] In some embodiments, the power supply introduction assembly further comprises a support cylinder located between the conductive plate and the back plate; the support cylinder comprises an outer side wall and an inner side wall extending in a direction perpendicular to the conductive plate; a partition plate, an edge of the partition plate is connected with the inner side wall of the support cylinder; the partition plate extends parallel to the back plate, and the partition plate divides the support cylinder into two parts; and the conductive member is arranged between the outer side wall and the inner side wall of the support cylinder.

[0013] According to some aspects of embodiments of the present disclosure, a vapor deposition apparatus is provided, comprising: a process chamber; and the power introduction assembly; at least part of the power introduction assembly is located in the process chamber; a power supply assembly located outside the process chamber; the power introduction assembly is connected with the power supply assembly; a wafer carrier is located in the process chamber; the wafer carrier is configured to carry a wafer; a target material is located between the power supply assembly and the wafer carrier.

[0014] Embodiments of the present disclosure provide a power introduction assembly, which can be applied to a vapor deposition apparatus, the power introduction assembly can include an introduction part, a conductive plate, and a plurality of adjustment blocks; the conductive plate is sleeved on the outer periphery of the introduction part, and the plurality of adjustment blocks are distributed around the introduction part along the circumferential direction of the introduction part on the outside of the introduction part, at least part of the adjustment blocks are located between the conductive plate and the introduction part; and a plurality of fixing shafts are spaced apart along the circumferential direction of the introduction part on the outside of the introduction part, and at least one fixing shaft is connected with the adjustment block; the adjustment block can be configured to rotate around a rotation axis parallel to the conductive plate, and the adjustment block rotates around the fixing shaft connected therewith; the adjustment block can be rotated to be flush with the conductive plate, or have a certain opening angle with the conductive plate, such as being perpendicular to the conductive plate; different opening angles between the adjustment block and the conductive plate result in different cross-sectional areas of the adjustment block in the thickness direction, that is, different cross-sectional areas of the adjustment block connected with the conductive plate, resulting in different resistances, so as to adjust the current distribution of different directions or regions of the conductive plate, and further to adjust the uniformity of the current distribution of the conductive plate. BRIEF DESCRIPTION OF DRAWINGS

[0015] Figure 1 And Figure 2 is a schematic diagram of a power introduction assembly according to embodiments of the present disclosure;

[0016] Figures 3 to 5 is a distribution schematic diagram of an adjustment block according to embodiments of the present disclosure;

[0017] Figures 6 to 12 is a schematic diagram of an adjustment block according to embodiments of the present disclosure;

[0018] Figures 13 to 15 is a back plate connection schematic diagram according to embodiments of the present disclosure;

[0019] Figure 16 is a schematic diagram of a vapor deposition apparatus according to embodiments of the present disclosure. DETAILED DESCRIPTION

[0020] Exemplary embodiments of the present disclosure will be described below in greater detail with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it is to be understood that the present disclosure can be variously implemented and thus should not be limited to the particular embodiments set forth herein. Rather, the embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the present disclosure to those skilled in the art.

[0021] It will be understood that when an element or layer is referred to as being "on", "adjacent", "connected to", or "coupled to" another element or layer, it can be directly on, adjacent, connected or coupled to the other element or layer, or one or more intervening elements or layers can be present. In contrast, when an element is referred to as being "directly on", "directly adjacent", "directly connected to", or "directly coupled to" another element or layer, then there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. can be used herein to describe various elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present disclosure. Similarly, a second element, component, region, layer or section discussed below could be termed a first element, component, region, layer or section without departing from the teachings of the present disclosure.

[0022] Spatially relative terms, such as "beneath", "below", "lower", "under", "above", "upper" and the like, can be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if a device in the figures is turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" or "over" the other elements or features. Thus, the exemplary term "below" can encompass both an orientation of above and below. The device can be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

[0023] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and / or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0024] It is to be understood that the terminology "some embodiments" or "an embodiment" used herein indicates a certain feature, structure, or characteristic included in at least one embodiment of the disclosure. Therefore, "in some embodiments" or "in an embodiment" appearing in various places in the specification are not necessarily used to refer to the same embodiment. Moreover, these particular features, structures, or characteristics can be combined in any suitable manner in one or more embodiments. It is to be understood that the sequence of the above-described processes in various embodiments of the disclosure does not mean the order of execution, and the execution order of the processes should be determined according to their functions and inherent logic, and should not constitute any limitation on the implementation process of the embodiments of the disclosure.

[0025] In some embodiments, the power introduction assembly mentioned in the disclosure can be applied to a PVD device or equipment, at least part of the components of the power introduction assembly can be electrically connected with a power supply assembly of the PVD device, the power supply assembly can provide radio frequency power (RF), very high frequency power (VHF), direct current power (DC), etc., the power introduction assembly introduces power into a process cavity to generate plasma to bombard a target material, so that ions and target surface atoms collide to sputter the latter to a substrate, wafer, or other materials to be processed to deposit a film on the surface of the materials to be processed; for example, the PCD device can include but is not limited to a plasma sputtering PVD device or a plasma evaporation PVD device.

[0026] In some PVD devices, a magnetron assembly is further included, the magnetron assembly provides a magnetic field, under the action of the magnetic field, electrons generate a spin-polarized current on the target material to form plasma. The plasma is guided to the surface of the metal target to knock off atoms or molecules of the metal target; due to the influence of the electric field and the magnetic field, the atoms or molecules of the target material impact the materials to be processed (such as wafers) at high speed, thereby depositing a film on the surface of the materials to be processed, the film can include conductive films, magnetic films, etc. The strength and direction of the magnetic field directly affect the trajectory and energy distribution of the ions, thereby affecting the crystal structure and properties of the film. For example, the PVD device can include but is not limited to a magnetron sputtering physical PVD device.

[0027] In some embodiments, the power introduction assembly of the PVD deposition device can include a power introduction plate located in the process chamber, which is adapted to the shape of the wafer, which can be circular. The power introduction plate is connected to an external power source and distributes the current provided by the power source. The power introduction plate flows the current into the target material through conductive components such as conductive rods or conductive columns, etc. to realize PVD plasma ignition plating. The current of the power introduction plate can be used to ionize the gas in the process chamber to generate plasma, and also provide an electric field to accelerate the plasma to bombard the target material. Ideally, after the current is introduced into the power introduction plate, it is uniformly distributed to the edge of the power introduction plate in a circumferential direction, so that the plasma is uniformly distributed, and the current distribution of the target material is uniform, thereby making the film thickness of each area on the wafer uniform. Therefore, improving the uniformity of the current distribution of the power introduction plate is conducive to improving the uniformity of the wafer film thickness and improving the PVD process yield.

[0028] In some embodiments, due to the distribution error of the mounting hole of the power introduction plate, the thickness of the material itself, surface defects, etc. cause the current distribution of each part of the power introduction plate to be uneven. The skin effect exists on the conductor, that is, the high-frequency current tends to flow along the surface of the conductor when conducting. The higher the current frequency, the shallower the surface depth of transmission, and the greater the transmission resistance, resulting in uneven current distribution of the power introduction plate.

[0029] In some embodiments, different shapes and numbers of openings (or slits) can be provided at different positions of the power introduction plate to adjust the current distribution. For example, if an opening is provided at a position of the current introduction plate, it means that the current flowing through this position will decrease, and the plasma density on this side will decrease, which means that the film thickness on the corresponding wafer in this area will decrease. For film thickness detection on the wafer, resistance or optical methods can be used for detection. For example, for a conductive film layer, the smaller the resistance, the thicker the film layer, and the greater the resistance, the thinner the film layer.

[0030] It can be understood that the openings for adjusting the current distribution in this embodiment cannot be adjusted in position after being set, and only the fixed positions of the power introduction plate can be adjusted or compensated. If the current distribution is uneven at other positions of the power introduction plate, a new current introduction plate needs to be customized and replaced if a change is desired, which reduces the operating efficiency of the machine and increases the maintenance cost of the machine. Therefore, the present disclosure provides a power introduction assembly, which includes a current introduction plate, and an adjusting block that can rotate and open and close is arranged on the current introduction plate. By adjusting the opening angle of the adjusting block, the effective cross-sectional area of the adjusting block for introducing or carrying current is adjusted, and the resistance is adjusted, thereby adjusting the current distribution on the current introduction plate, achieving the adjustment of the film thickness uniformity on the wafer surface, and improving the yield.

[0031] According to some aspects of the embodiments of the present disclosure, Figure 1 A power introduction assembly 100 is provided, which includes:

[0032] The introduction part 111 is configured to connect the power supply;

[0033] The conductive plate 112 is sleeved on the outer periphery of the introduction part 111. The introduction part 111 can be located at the center of the conductive plate 112 or near the center of the conductive plate 112.

[0034] The plurality of adjusting blocks 113 are distributed along the circumference of the introduction part 111 outside the introduction part 111. At least part of the adjusting blocks 113 are located between the conductive plate 112 and the introduction part 111.

[0035] The plurality of fixing shafts 116 are distributed along the circumference of the introduction part 111 outside the introduction part 111. Each adjusting block 113 is connected with at least one fixing shaft 116. The adjusting block 113 is configured to rotate around the rotation axis parallel to the conductive plate 112, and the adjusting block 113 rotates around the fixing shaft 116 connected therewith. The conductive plate 112 can be electrically connected with the introduction part 111 through the adjusting block 113. The introduction part 111 is connected with the power supply and distributes the current to the adjusting block 113 and the conductive plate 112. The adjusting block 113 can rotate between the angle parallel to the conductive plate 112 and the angle perpendicular to the conductive plate 112. The rotation angle or the opening and closing angle of the adjusting block 113 is adjusted to adjust the cross-sectional area of the electrical connection between the adjusting block 113 and the conductive plate 112, so as to adjust the resistance of the electrical connection between the adjusting block 113 and the conductive plate 112, thereby adjusting the current carrying capacity.

[0036] When the length, thickness and other physical dimensions of the adjusting block 113 are unchanged, or the mechanical deformation caused by the installation process is ignored, or the thermal strain caused by the temperature is ignored, or the change of the resistance coefficient caused by the temperature is ignored, the larger the cross-sectional area of the adjusting block 113 connected to the conductive plate 112 is, the smaller the resistance is. The opening and closing angles of the adjusting blocks 113 in different regions are adjusted to make the resistances in different regions uniform, thereby making the current distribution in different regions uniform.

[0037] Figure 1 And Figure 2 An example of the cross-sectional view of the example power supply introduction assembly 100 in the xoz plane is shown. The x direction, the y direction and the z direction shown in the drawings of the embodiments of the present disclosure can be horizontal directions. The x direction and the y direction can intersect or be perpendicular. The z direction is the vertical direction or the thickness direction. For example, the thickness direction of the conductive plate 112 is the z direction. The thickness direction of the conductive plate 112 is perpendicular to the direction of the extension plane thereof. The x direction can be referred to as the first direction, the y direction can be referred to as the second direction, and the z direction can be referred to as the third direction. Hereinafter, the description will not be repeated. For example, the conductive plate 112 extends in the x or y direction. The x direction or the y direction is parallel to the direction of the conductive plate 112. The z direction is perpendicular to the direction of the conductive plate 112.

[0038] Figure 2The power supply introduction assembly 100 in the figure can further include a magnetron assembly 160, which can include a magnetic pole or magnetron 161 to provide a magnetic field, and a transmission shaft 162 coupled with an external motor to drive the magnetron 161 to rotate or lift. The transmission shaft 162 can be directly connected with the magnetron 161 or connected through a transfer case to distribute power in different directions and change speed. Figure 2 The power supply introduction assembly 100 in the figure can be adapted to a magnetron sputtering PVD device; or can be adapted to a DC magnetron sputtering PVD device. Figure 2 The magnetron assembly 160 in the figure can be divided into components of the PVD device, and can not belong to the power supply introduction assembly 100.

[0039] Referring to the figure, Figure 1 As an example, the power supply introduction assembly 100 can include a power supply introduction plate 110, which can include a conductive plate 112, an introduction part 111 at the center of the conductive plate 112, and a plurality of adjusting blocks 113 between the conductive plate 112 and the introduction part 111. The conductive plate 112 is in a circular ring structure, and the introduction part 111 is located in the inner circle of the conductive plate 112 and at the center. The materials of the conductive plate 112, the introduction part 111, and the adjusting blocks 113 can be the same, which can include but are not limited to aluminum, titanium, stainless steel, copper, and alloys thereof. The conductive plate 112, the introduction part 111, or the adjusting blocks 113 can constitute the power supply introduction plate 110, which is a detachable accessory of the power supply introduction plate 110. The power supply introduction plate 110 is circular as a whole to adapt to the PVD of the wafer, and the conductive plate 112 is the main body of the power supply introduction plate 110. Alternatively, the conductive plate 112, the introduction part 111, or the adjusting part can be independent accessories of the power supply introduction assembly 100, which can be assembled respectively. The logical division of the power supply introduction assembly 100 or the power supply introduction plate 110 in the embodiments of the present disclosure is only for explanation and illustration, and the functions of each accessory or component are not limited.

[0040] The introduction part 111 can be in a ring structure, and the inner ring in the middle is a mounting hole for mounting a conductive part to be connected to a power supply. The power supply provides at least one of RF power, VHF power, and DC power, and is not limited to the power frequency, power size, and switching sequence of the power supply, which can be controlled according to specific process parameters to achieve the power supply assembly or power supply device.

[0041] As an example, the conductive part can be Figure 1The example shows an introduction rod 131 extending along the z-direction. The introduction rod 131 is fixedly connected to a mounting hole (e.g., a first mounting hole 114) at the center of the introduction portion 111. The connection method may include, but is not limited to, threaded connection, threaded nut fixing, or snap-fit ​​installation method. The first mounting hole 114 at the center of the introduction portion 111 may be a through hole penetrating both the upper and lower surfaces of the introduction portion 111 in the z-direction, or a blind hole on the upper surface of the introduction portion 111 that does not penetrate the entire introduction portion 111. Alternatively, the introduction portion 111 may be a holeless structure, with the introduction rod 131 contacting and connecting to the upper surface of the introduction portion 111, and the introduction rod 131 landing at the center of the upper surface of the introduction portion 111. The power introduction assembly 100 may also include a connector 132 located on the conductive plate 112. The connector 132 has a mounting hole, and the introduction member is disposed in the mounting hole of the connector 132 for limiting and sealing.

[0042] Figure 1 The cross-sectional schematic diagram of the power supply component 100 only shows a portion of the adjusting block 113. The distribution of the adjusting block 113 on the power supply plate 110, or its layout relative to the conductive plate 112, can be found in the following text. Figure 3 , Figure 4 as well as Figure 5 Specific examples. Figure 3 , Figure 4 as well as Figure 5 The dashed lines in the diagram represent the rotation axes of each adjustment block 113. These rotation axes can be distributed radially along the conductive plate 112. The rotation axis is a virtual unit at the geometric level, referring to the rotation of the adjustment block 113 around the rotation axis as the center line. The fixed shaft 116 corresponding to each adjustment block 113 can be set at the dashed line. The fixed shaft 116 can be used to install the adjustment block 113.

[0043] Figure 1 The adjusting block 113 can be disposed between the conductive plate 112 and the inlet portion 111 via the fixed shaft 116. The adjusting block 113 can be circumferentially distributed around the inlet portion 111 (or the center of the inlet portion 111) with the inlet portion 111 (or the center of the inlet portion 111) as the center. The adjusting block 113 can be an arc-shaped block, and there can be a mounting gap between adjacent adjusting blocks 113 to facilitate the rotation of the adjusting block 113. The gap is not shown in the embodiment of this disclosure. The overall outer contour of the multiple adjusting blocks 113 after being arranged circumferentially is circular, and the overall shape is annular. The inlet portion 111 is located in the inner ring of the annular ring.

[0044] like Figure 3 , Figure 4 Only one ring of adjusting block 113 is shown, located between conductive plate 112 and inlet 111. In other embodiments, multiple rings of adjusting block 113 may be provided, such as... Figure 5The two circles of the adjusting block 113 shown in the middle, the inner circle of the adjusting block 113 close to the introduction part 111 is located between the conductive plate 112 and the introduction part 111, and the outer circle of the adjusting block 113 is embedded in the conductive plate 112, thereby the current distribution of more areas of the conductive plate 112 can be adjusted to improve the current uniformity. Figure 3 All the adjusting blocks 113 in the middle are in a closed state, and the adjusting block 113 is parallel to the conductive plate 112 or the introduction part 111 with an included angle of 0 degrees. Figure 4 And Figure 5 Some of the adjusting blocks 113 in the middle are rotated by 90 degrees and are perpendicular to the conductive plate 112 or the introduction part 111, at this time, the cross-sectional area of the adjusting block 113 accessing the conductive plate 112 is the smallest, the resistance is the largest, and the distributed current can be the smallest.

[0045] In some embodiments, referring to Figure 6 As shown, the adjusting block 113 can be installed through the fixed shaft 116, Figure 6 The relative positions of the conductive plate 112, the fixed shaft 116 and the adjusting block 113 are shown in the middle, and the adjusting block 113 can be rotated clockwise or counterclockwise in the xoz plane or other planes parallel to the z direction around the fixed shaft 116 as the rotation axis.

[0046] In some embodiments, referring to Figure 7 As shown, the fixed shaft 116 can penetrate the adjusting block 113 along the direction perpendicular to the thickness of the adjusting block 113, the adjusting block 113 is sleeved on the fixed shaft 116, the fixed shaft 116 extends out of the adjusting block 113 and is connected with the conductive plate 112 and the introduction part 111, and the adjusting block 113 can rotate around the fixed shaft 116 as the rotation axis. The two ends of the fixed shaft 116 can be respectively embedded in the mounting holes on the side of the conductive plate 112 and the side of the introduction part 111; the fixed shaft 116 can be fixedly connected with the conductive plate 112 and the introduction part 111, and the fixed shaft 116 is movably connected with the adjusting block 113, such as through a bearing or a gear connection; or the fixed shaft 116 can be fixedly connected with the adjusting block 113, and the fixed shaft 116 is movably connected with the conductive plate 112 and the introduction part 111.

[0047] In some embodiments, the fixed shaft 116 does not penetrate all the adjusting blocks 113, or is only installed on any one side of the two sides of the adjusting block 113, such as Figure 8 As shown, the fixed shaft 116 is installed on the two sides of the adjusting block 113, the fixed shaft 116 is fixedly connected with the adjusting block 113, and the fixed shaft 116 is movably connected with the conductive plate 112 and the introduction part 111; or the fixed shaft 116 in Figure 8 The fixed shaft 116 only extends into part of the width of the adjusting block 113, and the connection mode of the fixed shaft 116 and the adjusting block 113 can refer to Figure 7The fixed shaft 116 can be installed on one side of the adjusting block 113, and the other side of the adjusting block 113 is in frictional connection with the conductive plate 112 or the introduction part 111.

[0048] Figures 9 to 12 The rotation of the adjusting block 113 and the schematic diagrams of different opening degrees are sequentially shown. Part a of the diagram corresponds to the schematic diagram of the clockwise or counterclockwise rotation angle of the adjusting block 113 in the plane parallel to the z direction, part b is the sectional view of the adjusting block 113 in the xoy plane at the current opening angle, and part c is the sectional view of the overlapping part of the adjusting block 113 and the conductive plate 112 in the xoz plane at the current opening angle. Figure 9 When the opening degree of the adjusting block 113 is 0, the adjusting block 113 is parallel to the conductive plate 112. Figure 10 、 Figure 11 and Figure 12 The opening degrees of the adjusting block 113 are sequentially increased until the adjusting block 113 is perpendicular to the conductive plate 112. The cross-sectional area of the adjusting block 113 in part c of the diagram gradually decreases, the resistance of the adjusting block 113 connected to the conductive plate 112 gradually increases, and the carrying current gradually decreases. Therefore, the size of the opening degree of the adjusting block 113 can be adjusted to adjust the size of the current distribution and the uniformity of the current distribution of the adjusting block 113 in different regions.

[0049] In some embodiments, referring to Figure 7 , the power supply introduction assembly 100 (or the power supply introduction plate 110) further comprises:

[0050] The fixed shaft 116 extends in a direction parallel to the conductive plate 112. One fixed shaft 116 penetrates one adjusting block 113 in a direction parallel to the conductive plate 112. The fixed shaft 116 serves as the rotation shaft of the adjusting block 113, and the fixed shaft 116 is configured to rotate and drive the adjusting block 113 to rotate. The rotation of the adjusting block 113 can be manually set or electrically set. The adjusting block 113 can be fixedly connected to the adjusting block 113, or connected through a gear or a thread. Rotating the rotation shaft drives the adjusting block 113 to rotate to adjust the size of the opening degree of the adjusting block 113. Alternatively, one end of the fixed shaft 116 can be power-coupled with a motor, and the motor drives the fixed shaft 116 to rotate and thus drives the adjusting block 113 to rotate. The rotation speed and the number of turns of the motor are controlled to rotate the adjusting block 113 to the target opening degree.

[0051] In some embodiments, referring to Figures 3 to 5 , at least part of the fixed shaft 116 is located between the conductive plate 112 and the introduction part 111. One end of at least part of the fixed shaft 116 is connected to the conductive plate 112, and the other end of at least part of the fixed shaft 116 is connected to the introduction part 111. The fixed shaft 116 can be arranged at the dotted line in Figures 3 to 5 , Figure 3 、 Figure 4The adjustment block 113 is arranged between the conductive plate 112 and the lead-in portion 111. Figure 5 The adjustment block 113 is arranged between the conductive plate 112 and the lead-in portion 111.

[0052] Figure 3 The adjustment block 113 is arranged between the conductive plate 112 and the lead-in portion 111. Figure 4 The adjustment block 113 is arranged between the conductive plate 112 and the lead-in portion 111. Figure 5 The adjustment block 113 is arranged between the conductive plate 112 and the lead-in portion 111. The adjustment block 113 is arranged between the conductive plate 112 and the lead-in portion 111.

[0053] In some embodiments, the power lead-in assembly 100 (or, the power lead-in plate 110) comprises a ring-shaped adjustment region surrounding the lead-in portion 111, and a plurality of adjustment blocks 113 corresponding to the ring-shaped adjustment region and arranged along a circumferential direction of the lead-in portion 111.

[0054] In some embodiments, the ring-shaped adjustment region comprises a plurality of sub-adjustment regions arranged in sequence; the power lead-in assembly 100 comprises a plurality of adjustment block groups, each adjustment block group being arranged corresponding to each sub-adjustment region; adjacent adjustment block groups are separated by a part of the conductive plate 112; each adjustment block group comprises a plurality of adjustment blocks 113 arranged along a circumferential direction of the lead-in portion 111; wherein, some adjustment block groups are arranged between the conductive plate 112 and the lead-in portion 111, and some adjustment block groups are arranged in the conductive plate 112.

[0055] One or more ring-shaped adjustment regions are arranged in sequence with the lead-in portion 111 as the center, to adapt to the adjustment of the current distribution of different regions of the wafer; some ring-shaped adjustment regions can correspond to Figure 3 The adjustment block 113 is arranged between the conductive plate 112 and the lead-in portion 111. Figure 3 The adjustment block 113 is arranged between the conductive plate 112 and the lead-in portion 111.

[0056] InFigure 5 In some embodiments, referring to FIG. 1, the annular adjustment region can include at least two nested sub-adjustment regions, one of which corresponds to the region between the conductive plate 112 and the lead-in portion 111, and a plurality of first adjustment blocks 113a are arranged to form an adjustment block group; the other sub-adjustment region corresponds to the region on the conductive plate 112, and the conductive plate 112 is provided with an annular slot to accommodate a plurality of second adjustment blocks 113b to form another adjustment block group.

[0057] In some embodiments, referring to Figures 3 to 5 As shown in FIG. 1, the outer contour of the adjustment block 113 includes an arc shape, and a plurality of adjustment blocks 113 are arranged along the circumference of the lead-in portion 111. The overall shape of the adjustment block 113 is an arc structure, and the outer contour is composed of two nested arc segments and a straight segment connecting the two ends, which is part of a circular ring. The plurality of adjustment blocks 113 are arranged along the circumference with the lead-in portion 111 (or the center of the lead-in portion 111) as the center. There can be installation errors and installation gaps between adjacent adjustment blocks 113. The outermost edges of the plurality of adjustment blocks 113 can be connected to form a circle or a circumference or substantially close to a circumference. Alternatively, the adjustment blocks 113 can be arranged along a circumference at intervals. Figure 3 And Figure 3 As shown in FIG. 1, a circumference includes a ring of adjustment blocks 113. Figure 5 As shown in FIG. 1, a circumference includes a ring of adjustment blocks 113.

[0058] In some embodiments, referring to Figure 5 As shown in FIG. 1, the circumference includes a plurality of nested circumferences, and the adjustment blocks 113 between adjacent circumferences are separated by a part of the conductive plate 112. The plurality of circumferences include at least an adjacent first circumference and a second circumference, and the second circumference is nested outside the first circumference. The first circumference and the second circumference are virtual units, and the first circumference can refer to an inner circle with the lead-in portion 111 as the center, and the second circumference is an outer circle nested outside the first circumference. The first adjustment block 113a is any one of the inner ring adjustment blocks 113, and the second adjustment block 113b is any one of the outer ring adjustment blocks 113. The conductive plate 112 can be divided into two parts, namely the nested conductive plate 112a and the conductive plate 112b, and the conductive plate 112b, the conductive plate 112a and the lead-in portion 111 are nested from outside to inside along the radial direction of the conductive plate 112. The plurality of adjustment blocks 113 include at least:

[0059] a plurality of first adjusting blocks 113a arranged along a first circumference, and a plurality of second adjusting blocks 113b arranged along a second circumference; wherein the first adjusting blocks 113a are located between the second adjusting blocks 113b and the introduction portion 111, the first adjusting blocks 113a are located between the conductive plate 112a and the introduction portion 111, the fixed shaft 116a connected with the first adjusting blocks 113a is located between the conductive plate 112a and the introduction portion 111; the second adjusting blocks 113b are located in the conductive plate 112, the fixed shaft 116b connected with the second adjusting blocks 113b is located in the conductive plate 112; the second adjusting blocks 113b are located between the conductive plate 112b and the conductive plate 112a, the fixed shaft 116b connected with the second adjusting blocks 113b is located between the conductive plate 112b and the conductive plate 112a.

[0060] In some embodiments, referring to Figure 13 As shown in the drawings, the power introduction assembly 100 (or, the power introduction plate 110) further comprises:

[0061] mounting holes, which pass through the introduction portion 111 in a direction perpendicular to the conductive plate 112, such as the first mounting hole 114; and / or, mounting holes which pass through the conductive plate 112 in a thickness direction of the conductive plate 112, such as the second mounting hole 115. In some embodiments, the mounting holes at least comprise:

[0062] the first mounting hole 114 which passes through the introduction portion 111, the first mounting hole 114 is located at the center of the introduction portion 111; in combination with Figure 1 and Figure 2 As shown in the drawings, the power introduction assembly 100 further comprises:

[0063] an introduction rod 131 which extends in a direction perpendicular to the conductive plate 112; one end of the introduction rod 131 is arranged in the first mounting hole 114 and connected with the inner side wall of the first mounting hole 114; the introduction portion 111 is connected with the power supply through the introduction rod 131. The introduction rod 131 is fixedly connected with the first mounting hole 114 at the center of the introduction portion 111, and the connection mode can include but is not limited to threaded connection, threaded nut fixation, or buckle mounting mode.

[0064] In some embodiments, referring to Figure 13 As shown in the drawings, the conductive plate 112 has a plurality of second mounting holes 115 arranged uniformly, and the second mounting holes 115 have the same hole diameter to make the current distribution uniform. The second mounting holes 115 can be used to mount the cooling water pipeline, or Figure 2 the transmission shaft 162 of the magnetic control assembly 160; the second mounting hole 115 can be used to mount the bearing and the sealing ring.

[0065] In some embodiments, referring to Figure 1 and Figure 2 As shown in the drawings, the power introduction assembly 100 further comprises:

[0066] a back plate 141 located on one side of the conductive plate 112 in the thickness direction (z direction); the side of the back plate 141 away from the conductive plate 112 is used to carry and connect the target material 151; and

[0067] a conductive member 170 located between the conductive plate 112 and the back plate 141; one end of the conductive member 170 is connected to the conductive plate 112, and the other end is connected to the back plate 141. The target material 151 is a replaceable consumable, which can or can not be part of the power supply lead-in assembly 100; it can include a plurality of arrayed target materials 151.

[0068] In some embodiments, referring to Figure 1 and Figure 2 , the power supply lead-in assembly 100 further includes:

[0069] a support cylinder 121 located between the conductive plate 112 and the back plate 141; the support cylinder 121 includes an outer sidewall and an inner sidewall extending in a direction perpendicular to the conductive plate 112;

[0070] a partition plate 122, the edge of the partition plate 122 is connected to the inner sidewall of the support cylinder 121; the partition plate 122 extends parallel to the back plate 141, and the partition plate 122 divides the support cylinder 121 into an upper part and a lower part; wherein the conductive member 170 can be arranged between the outer sidewall and the inner sidewall of the support cylinder 121.

[0071] In some embodiments, referring to Figure 1 and Figure 2 , the power supply lead-in assembly 100 further includes a shielding cover 133 located on the outer shell layer of the power supply lead-in assembly 100 for electromagnetic shielding; the shielding cover 133 can serve as the outer sidewall of the power supply lead-in assembly 100, the shielding cover 133 is made of metal material, or can be grounded. Or the shielding cover 133 can have an insulating protective cover outside, or can have an insulating coating.

[0072] Figure 2 and Figure 13 , the support cylinder 121 is used to carry the power supply lead-in plate 110, the power supply lead-in plate 110 is located in the upper part of the support cylinder 121, and the back plate 141 is located in the lower part of the support cylinder 121; the shape of the support cylinder 121 is cylindrical, and the material is insulating material, which can include but is not limited to ceramic, high polymer material, etc. The support cylinder 121 can be provided with a partition plate 122, and the material of the partition plate 122 is insulating material; the partition plate 122 divides the support cylinder 121 into an upper part and a lower part; the partition plate 122 and the support cylinder 121 can be made of the same material and can be integrally formed. The power supply lead-in plate 110 (or the conductive plate 112), the support cylinder 121 and the back plate 141 form a larger cavity, and the back plate 141 is transversely arranged on the inner sidewall of the support cylinder 121 to divide the upper chamber and the lower chamber.

[0073] Figure 13As shown, the magnetron 161 of the magnetron assembly 160 can be disposed in the lower chamber. The second mounting hole 115 of the conductive plate 112 can be used to mount the drive shaft 162. The drive shaft 162 is poweredly coupled to an external motor and drives the magnetron 161 to rotate or rise and fall. The drive shaft 162 can also pass through the shielding cover 133 and is installed in the mounting hole of the shielding cover 133. Alternatively, a cooling pipe can be provided, passing through the shielding cover 133 and disposed in the second mounting hole 115 of the conductive plate 112. The water inlet pipe and the water outlet pipe can be respectively disposed in the symmetrically arranged second mounting holes 115; to cool the magnetron assembly 160, the back plate 141, and the target material 151 supported on the back plate 141 in the lower chamber.

[0074] The backplate 141 is made of a conductive material, such as aluminum, titanium, stainless steel, or their alloys. The target 151 is supported on the side of the backplate 141 away from the conductive plate 112. A sealing ring 142 can be fitted around the outer periphery of the target 151 to limit the target 151 and maintain the vacuum level. The sealing ring 142 may be made of, but is not limited to, ceramic materials. The target 151 may be made of, but is not limited to, tungsten, aluminum, copper, iron, nickel, chromium, titanium, or their alloys. The sealing ring 142 may protrude from the backplate 141 away from the conductive plate 112, and the sealing ring 142 may be flush with the target 151.

[0075] In some embodiments, refer to Figure 1 As shown, the power supply assembly 100 may further include a conductive element 170 located between the conductive plate 112 and the back plate 141, wherein the current direction on the conductive element 170 is as follows: Figure 2 As indicated by the arrow, the material is transferred from the conductive plate 112 to the back plate 141, and thus to the target 151. The conductive element 170 may be disposed between the outer and inner sidewalls extending in the z-direction of the support cylinder 121, but not in… Figure 14 and Figure 15 As shown, the conductive element 170 is held or covered by the inner and outer walls of the support cylinder 121 for insulation.

[0076] In some embodiments, the conductive element 170 may include Figure 15 The conductive cylinder 171 shown in the example is a hollow cylindrical shape; the top circular edge of the conductive cylinder 171 is connected to the edge of the conductive plate 112, and the bottom circular edge of the conductive cylinder 171 is connected to the back plate 141. In some embodiments, the conductive element 170 may include... Figure 16 The conductive rod 172, or conductive column or conductive bar, extends along the z-direction and is evenly distributed along the outer circumference of the conductive plate 112 to improve the uniformity of current distribution. Figure 1 The sealing ring 142 shown can protrude from the back plate 141 away from the conductive rod 172, and the sealing ring 142 can be flush with the target material 151.

[0077] According to some aspects of embodiments of this disclosure,Figure 2 A vapor deposition device 10 is provided, which can include but not limited to a plasma sputtering PVD device, or a plasma evaporation PVD device, or a magnetron sputtering physical PVD device; at least including:

[0078] a process chamber 20; and a power lead-in assembly 100 as exemplified in any one of Figure 16 and Figure 16 claims, at least part of the power lead-in assembly 100 is located within the process chamber 20;

[0079] a power supply assembly 30, located outside the process chamber 20; the power lead-in assembly 100 is connected with the power supply assembly 30;

[0080] a wafer carrier 201, located within the process chamber 20; the wafer carrier 201 is configured to carry a wafer 200;

[0081] a target material 151, located between the power supply assembly 30 and the wafer carrier 201; the target material 151 is a replaceable consumable material, which can or can not belong to a part of the deposition device.

[0082] ​ The process chamber 20 as exemplified in the claims is only an example, and the process chamber 20 can further include a hatch for accessing the chamber, and gas inlet, outlet pipes or grounding assemblies, etc. The sidewall of the process chamber 20 can be connected with the shield 133 of the power lead-in assembly 100, and can be connected by flanges and bolts for easy maintenance. The shield 133 and the chamber wall of the process chamber 20 can be considered as the sidewall of the entire chamber, i.e. the power supply assembly 30 is located at the upper end of the process chamber 20 or as a top cover, and the chamber wall of the process chamber 20 provides the shield 133, which can be grounded to provide electromagnetic shielding. Part of the lead-in rod 131 is located within the process chamber 20, and part is located outside the process chamber 20. The sealing ring 142 is sleeved on the outer periphery of the target material 151, and can be located at the junction of the upper and lower chambers of the process chamber 20 where the power lead-in assembly 100 is located, or at the junction of the openable top cover of the process chamber 20 and the lower chamber, for sealing the chamber.

[0083] The power supply assembly 30 can include but not limited to a radio frequency assembly and a direct current assembly, and can provide at least one of RF power, VHF power and DC power, without limitation to the power frequency, power size and switching timing of the power, which can be controlled according to specific process parameters. The current provided by the power supply assembly 30 can at least pass through the lead-in rod 131, the lead-in portion 111, the adjusting block 113 and the conductive plate 112 to conduct to the target material 151 to complete the plasma sputtering film deposition.

[0084] The wafer carrier 201 is configured to hold the wafer 200. The wafer carrier 201 may fix the wafer 200 by means including but not limited to: electrostatic adsorption, vacuum adsorption or mechanical clamping of the edge of the wafer 200. The wafer carrier 201 may also be equipped with heating and heat dissipation components to adjust the temperature of the wafer 200 according to the requirements of different process nodes.

[0085] In some embodiments, refer to ​ As shown, the vapor deposition apparatus 10 may further include a shield 202 located within the process chamber 20. The shield 202 is cylindrical, with its upper end fitted around the outer periphery of the target 151 and extending from the target 151 towards the wafer carrier 201. The bottom of the shield 202 is open to reduce ion sputtering and deposition on the inner wall of the process chamber 20, prevent sputtered material from depositing on the sidewalls of the process chamber 20, and facilitate cleaning and maintenance. The shield 202 may be installed using bolted connections, flange connections, or other detachable fastening methods. The shield 202 may or may not be part of the power supply assembly 100.

[0086] In some embodiments, the shielding member 202 extends downward to the vicinity of the wafer carrier 201, and the wafer carrier 201 can be raised so that the wafer or the wafer carrier 201 is surrounded by the shielding member 202, reducing sputtering and coating on the inner wall of the process cavity 20, and facilitating cleaning and maintenance. In some embodiments, a cover ring 203 is fitted around the outer periphery of the wafer carrier 201, and the wafer carrier 201 supports the wafer and rises, so that the cover ring 203 contacts or is about to contact the lower end of the shielding member 202 and stops. The shielding member 202 extends downward to the side of the wafer carrier 201, and the shielding member 202 and the wafer carrier 201 form a U-shaped portion, but the upper surface of the wafer carrier 201 is exposed. The cover ring 203 and the shielding member 202 are adapted to complete the closure or near-closure, reducing sputtering and deposit accumulation on the inner wall of the process cavity 20 and the base 204; the material of the cover ring 203 may include, but is not limited to, ceramic. The shielding component 202 may include, but is not limited to, aluminum, titanium, stainless steel or their alloys; the shielding component 202 may have a coating, such as polytetrafluoroethylene or ceramic.

[0087] The adjusting block 113 in the power supply lead-in plate 110 of the embodiments of the present disclosure can be configured to rotate around a rotation axis parallel to the conductive plate 112, and the adjusting block 113 rotates around the fixed shaft 116 connected thereto; the adjusting block 113 can be rotated to be flush with the conductive plate 112, or have a certain opening angle with the conductive plate 112, such as being perpendicular. Different opening angles between the adjusting block 113 and the conductive plate 112 make the cross-sectional area of the adjusting block 113 in the thickness direction different, that is, the cross-sectional area of the adjusting block 113 connected to the conductive plate 112 different, resulting in different resistances. Thus, the current distribution of the power supply lead-in plate 110 in different directions or regions can be adjusted, and the current distribution of the power supply lead-in plate 110 can be adjusted to be uniform, and the current distribution of the input target material 151 can be improved to be uniform, so that the film thickness of each region on the wafer is uniform.

[0088] The above merely describes the specific embodiments of the present disclosure, but the protection scope of the present disclosure is not limited thereto, and any person skilled in the art can easily think of changes or replacements within the technical range disclosed by the present disclosure, which shall be covered within the protection scope of the present disclosure.

Claims

1. A power supply component, characterized in that, include: Introduction section; Configured to connect to a power source; Conductive plate; sleeved on the outer periphery of the inlet portion; Multiple adjustment blocks are distributed circumferentially around the outside of the inlet portion; wherein at least some of the adjustment blocks are located between the conductive plate and the inlet portion; Multiple fixed shafts are distributed circumferentially around the outside of the inlet portion; each adjustment block is connected to at least one of the fixed shafts, the adjustment block is configured to rotate about a rotation axis parallel to the conductive plate, and the adjustment block rotates about the fixed shaft to which it is connected.

2. The power supply component according to claim 1, characterized in that, The power supply component also includes: A fixed shaft extends in a direction parallel to the conductive plate; the fixed shaft passes through the adjusting block in a direction parallel to the conductive plate; the fixed shaft serves as a rotation axis for the adjusting block, and the fixed shaft is configured to drive the adjusting block to rotate.

3. The power supply component according to claim 1, characterized in that, At least a portion of the fixed shaft is located between the conductive plate and the inlet portion; at least a portion of the fixed shaft has one end connected to the conductive plate and the other end connected to the inlet portion.

4. The power supply component according to claim 1, characterized in that, The power supply component includes an annular adjustment area surrounding the power supply portion, and a plurality of adjustment blocks are arranged in a circumferential direction surrounding the power supply portion, corresponding to the annular adjustment area.

5. The power supply component according to claim 4, characterized in that, The annular adjustment area includes a plurality of sub-adjustment areas nested sequentially; the power supply component includes a plurality of adjustment block groups, each adjustment block group corresponding to each of the sub-adjustment areas; adjacent adjustment block groups are separated by a portion of the conductive plate; each adjustment block group includes a plurality of adjustment blocks arranged in a circumferential direction surrounding the power supply portion; wherein, a portion of the adjustment block groups are located between the conductive plate and the power supply portion, and a portion of the adjustment block groups are located within the conductive plate.

6. The power supply component according to claim 1, characterized in that, The power supply component also includes: The mounting hole extends through the inlet portion in a direction perpendicular to the conductive plate; and / or, the mounting hole extends through the conductive plate in the thickness direction of the conductive plate.

7. The power supply component according to claim 6, characterized in that, The mounting holes include at least: A first mounting hole passes through the inlet portion, and the first mounting hole is located at the center of the inlet portion; The power supply component also includes: An inlet rod extends in a direction perpendicular to the conductive plate; one end of the inlet rod is disposed in the first mounting hole and connected to the inner sidewall of the first mounting hole; the inlet portion is connected to the power supply through the inlet rod.

8. The power supply component according to claim 1, characterized in that, The power supply component also includes: A backplate is located on one side of the conductive plate in the thickness direction; the surface of the backplate away from the conductive plate is used to support and connect the target material; and A conductive element is located between the conductive plate and the back plate; one end of the conductive element is connected to the conductive plate, and the other end is connected to the back plate.

9. The power supply component according to claim 8, characterized in that, The power supply component also includes: A support cylinder is located between the conductive plate and the back plate; the support cylinder includes an outer side wall and an inner side wall extending in a direction perpendicular to the conductive plate; A partition, the edge of which is connected to the inner wall of the support cylinder; the partition extends parallel to the back plate and divides the support cylinder into upper and lower parts; The conductive element is disposed between the outer side wall and the inner side wall of the support cylinder.

10. A vapor deposition apparatus, characterized in that, include: Process cavity; The power supply assembly as claimed in any one of claims 1 to 9, wherein at least a portion of the power supply assembly is located within the process cavity; The power supply assembly is located outside the process chamber; The power supply component is connected to the power component; A wafer carrier disk is located within the process cavity; The wafer carrier disk is configured to carry wafers; The target material is located between the power supply component and the wafer carrier disk.

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