Wafer processing limiting device and carbon dioxide laser processing equipment
By using multiple telescopic limiting mechanisms and limiting components in the wafer processing equipment, the problem of wafer misalignment was solved, achieving higher positioning accuracy and protection effect.
Patent Information
- Application Number
- CN202422844916.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-21
- Publication Date
- 2025-11-28
- Estimated Expiration
- 2034-11-21
AI Technical Summary
During the fabrication process, wafers are prone to shifting due to factors such as heating and lifting errors, which can prevent them from falling completely into the predetermined position and affect the processing accuracy.
Multiple telescopic limiting mechanisms are arranged in a circumferential array along the adsorption disk. Through the cooperation of the telescopic limiting mechanisms and limiting components, limiting notches and guide parts are formed to realize the acceptance and limiting of the wafer and avoid displacement.
It effectively prevents wafers from shifting during transfer, improves wafer positioning accuracy during processing, protects wafer edges, and expands the applicable wafer size range.
Smart Images
Figure CN223612398U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The application relates to the technical field of wafer processing, in particular to a wafer processing limiting device and a carbon dioxide laser processing equipment. BACKGROUND
[0002] In the preparation process of a wafer, a mechanical arm and a wafer heating device are needed, the wafer is clamped and placed on a heating disc of the wafer heating device by the mechanical arm, and in the placing process, the wafer is prone to deviation due to reasons such as heating and lifting error, so that the wafer cannot finally fall into a predetermined position. CONTENT OF THE UTILITY MODEL
[0003] Embodiments of the application provide a wafer processing limiting device and a carbon dioxide laser processing equipment to improve the problem of wafer deviation in the transfer process.
[0004] In a first aspect, the embodiments of the application provide a wafer processing limiting device, comprising:
[0005] An adsorption disc is configured to adsorb a wafer.
[0006] A plurality of telescopic limiting mechanisms are arranged along the circumferential direction of the adsorption disc, and the telescopic direction of the telescopic limiting mechanism is the axial direction of the adsorption disc.
[0007] The telescopic limiting mechanism comprises a telescopic mechanism and a limiting piece, the telescopic end of the telescopic mechanism is connected with the limiting piece, the limiting piece comprises a bearing part, a limiting part and a guide part, the bearing part is connected with the telescopic end of the telescopic mechanism, the limiting part is connected to the side of the bearing part away from the telescopic mechanism, the limiting part and the bearing part jointly define a limiting gap, the limiting gap is configured to accommodate the wafer and limit the movement of the wafer along the radial direction of the adsorption disc, and the guide part is connected to the side of the limiting part away from the bearing part and configured to guide the edge of the wafer to fall into the limiting gap.
[0008] In some embodiments of the application, the bottom side of the limiting part is connected with a part of the top side of the bearing part, and the side of the limiting part facing the adsorption disc and the part of the bearing part not in contact with the bottom side of the limiting part jointly define the limiting gap with the opening facing the radial direction and the axial direction.
[0009] In some embodiments of the application, the side of the limiting part facing the adsorption disc is arc-shapedly connected with the part of the bearing part not in contact with the bottom side of the limiting part.
[0010] In some embodiments of the present application, the guiding portion is inclined towards one side of the adsorption disc, and the distance from the bottom of the inclined side to the center of the adsorption disc gradually increases in the axial direction.
[0011] In some embodiments of the present application, the bearing portion, the limiting portion and the guiding portion are integrally formed.
[0012] In some embodiments of the present application, the limiting portion comprises a first limiting sub-portion, a second limiting sub-portion and a third limiting sub-portion connected in sequence in the axial direction away from the bearing portion, the bottom side length of the first limiting sub-portion is greater than the bottom side length of the second limiting sub-portion, the bottom side length of the second limiting sub-portion is greater than the bottom side length of the third limiting sub-portion, one side of the first limiting sub-portion towards the radial direction of the adsorption disc and the top side of the bearing portion define a first limiting sub-gap, one side of the second limiting sub-portion towards the radial direction of the adsorption disc and the top side of the first limiting sub-portion define a second limiting sub-gap, one side of the third limiting sub-portion towards the radial direction of the adsorption disc and the top side of the second limiting sub-portion define a third limiting sub-gap, and the first limiting sub-gap, the second limiting sub-gap and the third limiting sub-gap jointly constitute the limiting gap, so that the limiting gap is in a stepped shape.
[0013] In some embodiments of the present application, the telescopic limiting mechanism further comprises an auxiliary connecting piece, and the telescopic end of the telescopic mechanism is connected with the limiting piece through the auxiliary connecting piece.
[0014] In some embodiments of the present application, the auxiliary connecting piece comprises a connecting horizontal plate and a receiving vertical plate, one end of the connecting horizontal plate is connected with the telescopic end of the telescopic mechanism, the receiving vertical plate is connected with one end of the connecting horizontal plate away from the telescopic end of the telescopic mechanism, the bearing portion is fixed to the connecting horizontal plate and located between the telescopic end of the telescopic mechanism and the receiving vertical plate, and the top side of the receiving vertical plate is located in the same horizontal plane as the top side of the bearing portion.
[0015] In some embodiments of the present application, a plurality of avoiding gaps are formed in the outer edge of the adsorption disc, the avoiding gaps are arrayed in the circumferential direction of the adsorption disc, and a plurality of the limiting pieces are arranged in one-to-one correspondence with a plurality of the avoiding gaps in the axial direction.
[0016] In the second aspect, the embodiments of the present application provide a carbon dioxide laser processing equipment, comprising the wafer processing limiting device as described in the first aspect.
[0017] Therefore, the embodiment of the application mainly realizes the receiving and limiting of the wafer by using multiple telescopic limiting mechanisms arranged in the circumferential direction of the adsorption disc, so as to avoid the offset of the wafer during the receiving process. Specifically, first, the telescopic mechanism and the limiting piece in the telescopic limiting mechanism are connected to realize the movement of the limiting piece in the axial direction, so as to realize the taking down of the wafer from the adsorption disc or the receiving of the wafer from the mechanical arm and sending to the adsorption disc. Then, the bearing part and the limiting part in the limiting piece form a limiting gap, so that the edge of the wafer can be located in the limiting gap arranged in the circumferential direction, thereby playing a role in receiving the wafer and limiting the offset of the wafer in the radial direction. Finally, the guide part is used, so that when the limiting piece receives the wafer from the mechanical arm or takes down the wafer from the adsorption disc, the limiting piece has a guiding effect when the wafer contacts the limiting piece, which facilitates the wafer to fall into the area defined by the multiple limiting gaps, and also avoids the damage of the wafer due to the large difference between the size of the wafer and the size of the area defined by the limiting gap. BRIEF DESCRIPTION OF DRAWINGS
[0018] In order to more clearly illustrate the technical solutions in the embodiments of the application, the drawings needed to be used in the embodiment description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the application, and other drawings can be obtained by those skilled in the art without creative labor.
[0019] Figure 1 A structural schematic view of a wafer processing limiting device provided by the embodiment of the application is shown in the figure.
[0020] Figure 2 A structural schematic view of a telescopic limiting mechanism provided by the embodiment of the application is shown in the figure.
[0021] Figure 3 A structural schematic view of a limiting piece provided by the embodiment of the application is shown in the figure.
[0022] Figure 4 A structural schematic view of another limiting piece provided by the embodiment of the application is shown in the figure.
[0023] Figure 5 A structural schematic view of an adsorption disc provided by the embodiment of the application is shown in the figure.
[0024] BRIEF DESCRIPTION OF DRAWINGS
[0025] 1, adsorption disc; 11, heating groove; 12, avoiding notch; 2, telescopic limiting mechanism; 21, telescopic mechanism; 22, limiting piece; 221, bearing part; 222, limiting part; 2221, first limiting subpart; 2222, second limiting subpart; 2223, third limiting subpart; 223, guide part; 224, limiting notch; 2241, first limiting subnotch; 2242, second limiting subnotch; 2243, third limiting subnotch; 23, auxiliary connecting piece; 231, connecting horizontal plate; 232, bearing vertical plate. DETAILED DESCRIPTION
[0026] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of the present application.
[0027] In the description of the present application, it should be understood that the words "first", "second" are only for the purpose of description, and cannot be understood as indicating or implying relative importance or indicating the number of the indicated technical features. Therefore, the features defined as "first", "second" can explicitly or implicitly include one or more features. In the description of the present application, the meaning of "multiple" is two or more, unless otherwise specifically limited.
[0028] Please refer to Figures 1 to 5 The embodiments of the present application provide a wafer processing limiting device, which comprises a base plate, an adsorption disc 1 and a plurality of telescopic limiting mechanisms 2. A plurality of through holes are formed on the base plate, and each through hole is provided with a telescopic limiting mechanism 2. The driving end of the telescopic limiting mechanism 2 is arranged below the base plate, and the telescopic end of the telescopic limiting mechanism can be telescoped along the axial direction of the through hole to pass through the through hole. A plurality of negative pressure supporting columns are arranged on the base plate, and the plurality of negative pressure supporting columns are arranged in an array along the circumference of the adsorption disc 1. The end of the negative pressure supporting column away from the base plate is fixedly connected with the outer circumferential edge of the adsorption disc 1, so that the adsorption disc 1 is arranged in a spaced manner with the base plate. A heating disc is arranged between the base plate and the adsorption disc 1. The adsorption disc 1 is detachably mounted on the top surface of the heating disc. The adsorption disc 1 is in direct contact with the wafer and does not conduct electricity with the wafer. At the same time, the adsorption disc can effectively transmit heat. The heating disc generates heat, so that the heat is used to heat the wafer through the adsorption disc. The adsorption disc 1 is made of insulating and heat-conducting material, such as ceramic material.
[0029] Further, the adsorption disc 1 is provided with a plurality of air ducts (not shown in the figure) and a heating groove 11 is formed on the adsorption disc 1, and the heating groove 11 is preferably in a spiral shape. One end of the air duct is in communication with the heating groove 11, and the other end is in communication with the negative pressure support column. Among them, one end of the air duct is connected with the negative pressure support column, and the other end is in communication with the heating groove 11 formed on the upper surface of the adsorption disc 1, and the wafer placed on the adsorption disc 1 can be fixed by negative pressure, avoiding the contact between other components and the wafer, and realizing the non-contact fixing.
[0030] In order to avoid the damage of the heat of the heating disc to the bottom disc, a heat insulation plate is arranged between the heating disc and the bottom disc to achieve the effect of heat insulation.
[0031] Please refer to Figure 2 , the wafer adsorbed on the adsorption disc 1 is difficult to take off, in order to facilitate the taking off of the wafer, and before the mechanical arm sends the wafer to the adsorption disc 1, other receiving mechanisms are needed to receive the wafer, and then the wafer is transported to the adsorption disc 1. In some embodiments, a plurality of telescopic limiting mechanisms 2 are arranged along the circumferential direction of the adsorption disc 1, and the telescopic direction of the telescopic limiting mechanism 2 is the axial direction of the adsorption disc 1. Among them, the telescopic limiting mechanism 2 includes a telescopic mechanism 21 and a limiting piece 22, the telescopic end of the telescopic mechanism 21 is connected with the limiting piece 22, the limiting piece 22 includes a bearing part 221, a limiting part 222 and a guide part 223, the telescopic end of the telescopic mechanism 21 is connected with the bearing part 221, the limiting part 222 is connected to the side of the bearing part 221 away from the telescopic mechanism 21, the limiting part 222 and the bearing part 221 jointly define a limiting gap 224, the limiting gap 224 is used for receiving the wafer and limiting the movement of the wafer along the radial direction of the adsorption disc 1, and the guide part 223 is connected with the side of the limiting part 222 away from the bearing part 221, for guiding the edge of the wafer to fall into the limiting gap 224.
[0032] By utilizing the plurality of telescopic limiting mechanisms 2 to be distributed in a circumferential array along the adsorption disc 1, the wafer can be supported and limited, and the wafer can be prevented from deviating during the supporting process. Specifically, first, the telescopic mechanism 21 and the limiting piece 22 in the telescopic limiting mechanism 2 are connected, the movement of the limiting piece 22 in the axial direction is realized, and then the wafer can be taken off from the adsorption disc 1 or the wafer can be supported from the mechanical arm and sent to the adsorption disc 1. Then, the bearing part 221 and the limiting part 222 in the limiting piece 22 are utilized to form the limiting gap 224, so that the edge of the wafer can be located in the limiting gap 224 distributed in the circumferential array, thereby playing the role of supporting the wafer and limiting the deviation of the wafer in the radial direction. Finally, the guide part 223 is utilized, so that when the wafer contacts the limiting piece 22 during the process of supporting the wafer from the mechanical arm or taking the wafer from the adsorption disc 1, the limiting piece 22 has a guiding effect, the wafer can be conveniently dropped into the area defined by the plurality of limiting gaps 224, and the condition that the wafer is damaged due to the great difference between the size of the wafer and the size of the area defined by the limiting gap 224 can be avoided.
[0033] Further, please refer to Figure 3 , the bottom side of the limiting part 222 is in contact with a part of the top side of the bearing part 221, the side of the limiting part 222 facing the adsorption disc 1 and the part of the bearing part 221 not in contact with the bottom side of the limiting part 222 together define the limiting gap 224 which is open in the radial direction and the axial direction. When the wafer is placed in the adsorption disc 1, the outer peripheral edge of the adsorption disc 1 will fall into the limiting gap 224, so that the limiting piece 22 plays the role of supporting the adsorption disc 1, and due to the circumferential array distribution of the limiting piece 22, the stress on the wafer is more uniform, and the deviation of the wafer due to uneven stress is reduced. When the wafer is taken off from the adsorption disc 1 by utilizing the limiting piece 22, the telescopic mechanism 21 drives the limiting piece 22 to move towards the wafer until the edge of the wafer is located in the limiting gap 224 of the limiting piece 22, the telescopic mechanism 21 continues to drive the limiting piece 22 to move upward, and the limiting piece 22 gives the wafer an upward force, thereby taking the wafer off from the adsorption disc 1. During the process of taking the wafer and supporting the wafer, the wafer may be deformed due to heat, resulting in uneven stress and deviation, or there may be errors in the starting time or the telescopic speed of the telescopic mechanism 21, resulting in uneven stress and deviation of the wafer, and the limiting part 222 of the limiting piece 22 can limit the deviation of the wafer at this time.
[0034] Further, the limiting part 222 is connected to the part of the bearing part 221 which is not in contact with the bottom side of the limiting part 222 in an arc shape towards one side of the adsorption disc 1, which protects the edge of the wafer. Specifically, when the edge size of the wafer is large and can contact the side of the limiting part 222 towards the adsorption disc 1, when the wafer falls to the bottom of the limiting gap 224, the inner wall of the limiting gap 224 contacted by the edge of the wafer is in an arc shape, compared to an angle shape, the wafer can fall into the limiting gap 224 more smoothly, avoiding damage to the edge of the wafer.
[0035] In some embodiments, the side of the guide part 223 towards the adsorption disc 1 is an inclined side, and the distance from the bottom to the top of the inclined side gradually increases from the center of the adsorption disc 1 in the axial direction. The inclined sides of the plurality of guide parts 223 together define a reversed conical frustum region which plays a guiding role. Whether when receiving the wafer or when removing the wafer from the adsorption disc 1, the reversed conical frustum region can transitionally guide the contact between the wafer and the limiting member 22, protect the wafer, and also improve the applicable range of wafer sizes.
[0036] In some embodiments, the bearing part 221, the limiting part 222 and the guide part 223 are integrally formed, which is beneficial to improve the overall strength of the limiting member 22.
[0037] In some embodiments, referring to Figure 4 , the limiting part 222 includes a first limiting sub-part 2221, a second limiting sub-part 2222 and a third limiting sub-part 2223 connected in sequence in the axial direction away from the bearing part 221, the bottom side length of the first limiting sub-part 2221 is greater than the bottom side length of the second limiting sub-part 2222, and the bottom side length of the second limiting sub-part 2222 is greater than the bottom side length of the third limiting sub-part 2223, the side of the first limiting sub-part 2221 towards the radial direction of the adsorption disc 1 and the top side of the bearing part 221 define a first limiting sub-gap 2241, the side of the second limiting sub-part 2222 towards the radial direction of the adsorption disc 1 and the top side of the first limiting sub-part 2221 define a second limiting sub-gap 2242, and the side of the third limiting sub-part 2223 towards the radial direction of the adsorption disc 1 and the top side of the second limiting sub-part 2222 define a third limiting sub-gap 2243, the first limiting sub-gap 2241, the second limiting sub-gap 2242 and the third limiting sub-gap 2243 together constitute the limiting gap 224, so that the limiting gap 224 is in a stepped shape. Through the above structure, the limiting gap 224 is divided into a plurality of limiting sub-gaps, and the limiting gap 224 as a whole is in a stepped shape. When the wafer enters the limiting gap 224, it is first guided by the guide part 223, so that the wafer better enters the limiting gap 224, and then when the wafer enters the limiting gap 224, it can fall into the most suitable limiting sub-gap according to its own size.
[0038] In some embodiments, the telescopic limiting mechanism 2 further comprises an auxiliary connector 23, the telescopic end of the telescopic mechanism 21 is connected with the limiting piece 22 through the auxiliary connector 23. The auxiliary connector 23 comprises a connecting horizontal plate 231 and a receiving vertical plate 232, one end of the connecting horizontal plate 231 is connected with the telescopic end of the telescopic mechanism 21, the receiving vertical plate 232 is connected with the end of the connecting horizontal plate away from the telescopic end of the telescopic mechanism 21, the bearing part 221 is fixed to the connecting horizontal plate 231 and located between the telescopic end of the telescopic mechanism 21 and the receiving vertical plate 232, the top side of the receiving vertical plate 232 is located at the same horizontal plane with the top side of the bearing part 221. Since the limiting piece 22 is in the form of a vertical plate, it is difficult to connect with the telescopic end of the telescopic mechanism 21, therefore, the limiting piece 22 and the telescopic end are connected through the auxiliary connector 23, which improves the connection stability of the limiting piece 22 and reduces the connection difficulty. By setting the top side of the receiving vertical plate 232 at the same horizontal plane with the top side of the bearing part 221, i.e. the top side of the receiving vertical plate 232 is flush with the top side of the bearing part 221, the receiving vertical plate 232 can also play a role in bearing the wafer.
[0039] In some embodiments, referring to Figure 5 , the outer edge of the adsorption disc 1 is provided with a plurality of avoiding notches 12, the avoiding notches 12 are arrayed along the circumference of the adsorption disc 1, and the plurality of limiting pieces 22 are arranged in one-to-one correspondence with the plurality of avoiding notches 12 in the axial direction, so that when the size of the wafer is the same as or smaller than the size of the adsorption disc 1, the telescopic limiting mechanism 2 can play a role in bearing and limiting the wafer.
[0040] It should be further noted that the telescopic mechanism 21 in any of the foregoing embodiments comprises a telescopic rod, which can be in the form of hydraulic telescopic, pneumatic telescopic, screw rod telescopic, etc., without specific limitation.
[0041] The embodiments of the present application also provide a carbon dioxide laser processing equipment comprising the wafer processing limiting device in any of the foregoing embodiments. Since the carbon dioxide laser processing equipment comprises the wafer processing limiting device, the carbon dioxide laser processing equipment has the same beneficial effects as the wafer processing limiting device, which will not be described here.
[0042] The foregoing detailed description has been described above, and it is obvious to those skilled in the art that the foregoing detailed description is only taken as an example and does not constitute a limitation on the present application. Although it is not explicitly stated herein, those skilled in the art can make various modifications, improvements and corrections to the present application. Such modifications, improvements and corrections are suggested in the present application, so such modifications, improvements and corrections still belong to the spirit and scope of the exemplary embodiments of the present application.
[0043] Furthermore, this application uses specific terms to describe embodiments of the application. For example, "an embodiment," "one embodiment," and / or "some embodiments" refer to a particular feature, structure, or characteristic associated with at least one embodiment of the application. Therefore, it should be emphasized and noted that "an embodiment," "one embodiment," or "an alternative embodiment" mentioned twice or more in different locations in this specification do not necessarily refer to the same embodiment. In addition, certain features, structures, or characteristics in one or more embodiments of the application can be appropriately combined.
[0044] Similarly, it should be noted that, in order to simplify the description of the present application and thus aid in the understanding of one or more embodiments, the foregoing description of the embodiments of the present application sometimes combines multiple features into a single embodiment, drawing, or description thereof. However, this disclosure method does not imply that the subject matter of the present application requires more features than those mentioned in the claims. In fact, the embodiments contain fewer features than all the features of the single embodiments disclosed above.
[0045] For each patent, patent application, patent application publication, and other material such as articles, books, specifications, publications, and documents referenced in this application, the entire contents of that patent application are incorporated herein by reference, except for historical application documents that are inconsistent with or conflict with the content of this application, and documents that limit the broadest scope of the claims of this application (currently or subsequently appended to this application). It should be noted that if there are any inconsistencies or conflicts between the descriptions, definitions, and / or terminology used in the supplementary materials of this application and the content of this application, the descriptions, definitions, and / or terminology used in this application shall prevail.
[0046] The above are merely preferred embodiments of this application and are not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.
Claims
1. A wafer processing limiting device, characterized by, The utility model relates to a wafer adsorption device, comprising: an adsorption disc for adsorbing a wafer; a plurality of telescopic limiting mechanisms, each of which is arranged along a circumferential direction of the adsorption disc, and a telescopic direction of the telescopic limiting mechanism is an axial direction of the adsorption disc; wherein the telescopic limiting mechanism comprises a telescopic mechanism and a limiting piece, a telescopic end of the telescopic mechanism is connected with the limiting piece, the limiting piece comprises a bearing part, a limiting part and a guide part, the bearing part is connected with the telescopic end of the telescopic mechanism, the limiting part is connected to a side of the bearing part away from the telescopic mechanism, the limiting part and the bearing part jointly define a limiting gap, the limiting gap is used for accommodating the wafer and limiting movement of the wafer along a radial direction of the adsorption disc, and the guide part is connected with a side of the limiting part away from the bearing part, and is used for guiding an edge of the wafer to fall into the limiting gap.
2. The wafer processing limiting device according to claim 1, wherein a bottom side of the limiting part is in contact with a part of a top side of the bearing part, and a side of the limiting part facing the adsorption disc and a part of the bearing part not in contact with the bottom side of the limiting part jointly define the limiting gap, which is open to the radial direction and the axial direction.
3. The wafer processing limiting device according to claim 2, wherein the side of the limiting part facing the adsorption disc is in arc connection with the part of the bearing part not in contact with the bottom side of the limiting part.
4. The wafer processing limiting device of claim 1, wherein, a side of the guide part facing the adsorption disc is an inclined side, and a distance between a bottom to a top of the inclined side and a center of the adsorption disc gradually increases along the axial direction.
5. The wafer processing limiting device according to any one of claims 1 to 4, wherein the bearing part, the limiting part and the guide part are integrally formed.
6. The wafer processing limiting device of claim 1, wherein the limiting part comprises a first limiting sub-part, a second limiting sub-part and a third limiting sub-part connected in sequence along an axial direction away from the bearing part, a bottom side length of the first limiting sub-part is greater than that of the second limiting sub-part, the bottom side length of the second limiting sub-part is greater than that of the third limiting sub-part, a side of the first limiting sub-part facing a radial direction of the adsorption disc and a top side of the bearing part define a first limiting sub-gap, a side of the second limiting sub-part facing the radial direction of the adsorption disc and a top side of the first limiting sub-part define a second limiting sub-gap, a side of the third limiting sub-part facing the radial direction of the adsorption disc and a top side of the second limiting sub-part define a third limiting sub-gap, and the first limiting sub-gap, the second limiting sub-gap and the third limiting sub-gap jointly constitute the limiting gap, so that the limiting gap is in a stepped shape.
7. The wafer processing limiting device of claim 1, wherein the telescopic limiting mechanism further comprises an auxiliary connecting piece, and the telescopic end of the telescopic mechanism is connected with the limiting piece through the auxiliary connecting piece.
8. The wafer processing limiting device according to claim 7, wherein the auxiliary connecting piece comprises a connecting horizontal plate and an accommodating vertical plate, one end of the connecting horizontal plate is connected with the telescopic end of the telescopic mechanism, the accommodating vertical plate is connected with one end of the connecting horizontal plate away from the telescopic end of the telescopic mechanism, the bearing part is fixed to the connecting horizontal plate and located between the telescopic end of the telescopic mechanism and the accommodating vertical plate, and a top side of the accommodating vertical plate is located in a same horizontal plane as a top side of the bearing part.
9. The wafer processing limiting device of claim 1, wherein, The outer edge of the adsorption disc is provided with a plurality of avoiding notches, which are arranged along the circumferential direction of the adsorption disc, and a plurality of limiting members are arranged one by one in the axial direction and are in one-to-one correspondence with the avoiding notches.
10. A carbon dioxide laser processing device, characterized in that, The wafer processing limiting device comprises the wafer processing limiting device as claimed in any one of claims 1 to 9.