Optical isolation switch with high assembly density

Abstract

The utility model provides an optical isolation switch with high assembly density. The optical isolation switch comprises a ceramic tube shell. The bottom of the ceramic tube shell is processed into a plurality of steps, and metallization areas with the same number and corresponding positions are processed on each step; according to the utility model, the photovoltaic diodes are installed on the substrate, and the structure is opposite to a traditional installation mode, so that the risk of electric connection is reduced, and the reliability of the optical isolation switch is improved; through the optimized structural design of the high-low lamination and the cavity isolation wall on the tube socket, each path of the tube socket part of the optical isolation switch can be provided with two field-effect tube areas to realize the use of a unidirectional switch and a bidirectional switch in the same tube shell, and electrical isolation with a light emitting diode at an input side is realized. Therefore, the size of the optical isolation switch is greatly reduced, and the power density of the optical isolation switch is improved.

Description

TECHNICAL FIELD

[0001] The utility model relates to a kind of high assembly density optical isolation switch. BACKGROUND

[0002] The existing optical isolation solid relay or optical isolation switch device, the volume of switch is relatively large or output current is small, so that its power density is small, cannot satisfy use demand, so that it cannot satisfy complex application scene.For example, the ceramic sealed photoelectric isolation switch of high dielectric voltage disclosed in CN216490437U is provided with a plurality of pads with a certain spacing at the bottom of the tube shell to install field effect tubes and photovoltaic components, and the light-emitting diode is supported above the photovoltaic component through the ceramic substrate, reducing the volume of the photoelectric isolation switch.But its light-emitting diode and field effect tube are installed on the same plane, so that multiple field effect tubes cannot be installed in each switch simultaneously, reducing the practicability of the switch. SUMMARY

[0003] To solve the above technical problems, the utility model provides a kind of high assembly density optical isolation switch.

[0004] The utility model is realized by the following technical schemes.

[0005] The utility model provides a kind of high assembly density optical isolation switch, including ceramic tube shell;The bottom of the ceramic tube shell is processed into multistage steps, and the same number of metallized areas corresponding to position are processed on each step;Light-emitting diode chip is installed on the metallized area of the lowest step, substrate is set above the lowest step, photovoltaic diode chip corresponding to the position of light-emitting diode chip is installed on the lower end surface of substrate, field effect tube is installed on the metallized area of remaining step, and the bottom of the ceramic tube shell is equipped with a plurality of external pins respectively connected with light-emitting diode chip and field effect tube.

[0006] Isolation wall is further equipped between adjacent light-emitting diode chips.

[0007] The external pin is connected with light-emitting diode chip or field effect tube through the metal wire of the bottom of ceramic tube shell, and the two poles of each light-emitting diode chip are respectively connected with two external pins, and the field effect tubes corresponding to position on multistage steps are connected through two external pins

[0008] The external pin connected with light-emitting diode chip and field effect tube respectively extends out of the ceramic tube shell from the opposite ends of the bottom of the ceramic tube shell.

[0009] The substrate is fixed on the inner wall of the ceramic tube shell, and the upper end surface of the substrate is provided with bonding point corresponding to the position of photovoltaic diode chip, the photovoltaic diode chip is connected with bonding point through the metal wire in the substrate, and the bonding point is connected with field effect tube through bonding wire.

[0010] The top of the substrate is further provided with an edge sealing ring, and the top of the edge sealing ring is closed by a cover plate.

[0011] The photovoltaic diode is installed on the substrate, the structure is opposite to the traditional installation mode, the risk of electrical connection is reduced, and the reliability of the optical isolation switch is improved. BRIEF DESCRIPTION OF DRAWINGS

[0012] Figure 1 It is a structural schematic diagram of the utility model;

[0013] Figure 2 It is a top view structural schematic diagram of the utility model;

[0014] Figure 3 It is a sectional view structural schematic diagram of the utility model;

[0015] Figure 4 It is an appearance structural schematic diagram of the utility model;

[0016] Figure 5 It is a one-way switch principle schematic diagram of the utility model;

[0017] Figure 6 It is a two-way switch principle schematic diagram of the utility model;

[0018] Figure 7 It is a four-way switch appearance structural schematic diagram of the utility model;

[0019] Figure 8 It is a four-way switch internal structure schematic diagram of the utility model;

[0020] Figure 9 It is a four-way switch top view structural schematic diagram of the utility model;

[0021] In the drawing: 1 - substrate, 2 - bonding point, 3 - first metallization area, 4 - second metallization area, 5 - edge sealing ring, 6 - ceramic tube shell, 7 - outer pin, 8 - photovoltaic diode chip, 9 - light emitting diode chip, 10 - cover plate, 11 - bonding wire. DETAILED DESCRIPTION

[0022] The technical scheme of the utility model will be further described below, but the scope of protection is not limited to the description.

[0023] For example, Figure 1As shown, a high-density optically isolated switch includes a ceramic housing 6. The bottom of the ceramic housing 6 is machined with three steps. A light-emitting diode (LED) chip 9 is mounted on the metallized area of ​​the lowest step. A substrate 1 is positioned above the lowest step, and a photovoltaic diode (PVD) chip 8, corresponding to the position of the LED chip 9, is mounted on the lower surface of the substrate 1. Field-effect transistors (FETs) are optionally mounted on the metallized areas of the remaining steps. The bottom of the ceramic housing 6 has several external pins 7 connected to the LED chip 9 and the FETs respectively. By mounting the LED 9 and the FET forming one switch with it at different heights within the housing, and through optimized structural design using high-low stacking and cavity isolation walls, each channel of the optically isolated switch housing can accommodate two FETs, enabling both unidirectional and bidirectional switching within the same housing. Furthermore, electrical isolation from the input LED is achieved, thus significantly reducing the size of the optically isolated switch and increasing its power density.

[0024] An isolation switch circuit is formed by using LED chip 9, photovoltaic diode chip 8, and MOSFET and pin 7. For example... Figure 5 As shown, a single-phase switch output circuit is formed by installing only one field-effect transistor (FET) on any step, consisting of a photovoltaic diode E1 and a FET V1. The positive terminal of the photovoltaic diode is connected to the gate of the FET V1, the negative terminal of the photovoltaic diode is connected to the source of the FET V1, the positive terminal of the output is connected to the drain of the FET V1, and the negative terminal of the output is connected to the source of the FET V1.

[0025] When MOSFETs are installed on both steps, a bidirectional switch output circuit is formed, consisting of a photovoltaic diode E1 and MOSFETs V1 and V2. The positive terminal of the photovoltaic diode is connected to the gate of MOSFETs V1 and V2, the negative terminal of the photovoltaic diode is connected to the source of MOSFETs V1 and V2, the positive terminal of the output is connected to the drain of MOSFET V1, and the negative terminal of the output is connected to the drain of MOSFET V2.

[0026] like Figure 1 As shown, an isolation wall is provided between adjacent light-emitting diode chips 9 to prevent multiple light-emitting diodes from interfering with each other.

[0027] like Figure 1 and 2 As shown, the external pin 7 is connected to the light-emitting diode chip 9 or the field-effect transistor (FET) via a metal wire at the bottom of the ceramic housing 6. Each light-emitting diode chip 9 has its two terminals connected to two external pins 7, and the FETs at corresponding positions on the multi-stage steps are connected via two external pins 7. The external pin 7 connected to the two terminals of the light-emitting diode becomes the input port, and the external pin 7 connected to the FET becomes the output port.

[0028] In order to facilitate installation, the outer pins 7 connected with the light emitting diode chip 9 and the field effect tube respectively extend out of the ceramic tube shell 6 from two ends opposite to the bottom of the ceramic tube shell 6, and a Z-shaped bending is arranged at the extending part, so that there is a gap between the bottom of the device and the circuit board, which is beneficial to heat dissipation of the device.

[0029] As shown in the title 1, the substrate 1 is fixed on the inner wall of the ceramic tube shell 6, and the substrate 1 is provided with a bonding point 2 corresponding to the position of the photovoltaic diode chip 8 on the upper end face, the photovoltaic diode chip 8 is connected with the bonding point 2 through the metal wire in the substrate 1, and the bonding point 2 is connected with the field effect tube through the bonding wire. The bonding wire does not block the opposite surface of the photovoltaic diode 8 and the light emitting diode 9.

[0030] As shown in the title 1, the substrate 1 is fixed on the inner wall of the ceramic tube shell 6, and the substrate 1 is provided with a bonding point 2 corresponding to the position of the photovoltaic diode chip 8 on the upper end face, the photovoltaic diode chip 8 is connected with the bonding point 2 through the metal wire in the substrate 1, and the bonding point 2 is connected with the field effect tube through the bonding wire. The bonding wire does not block the opposite surface of the photovoltaic diode 8 and the light emitting diode 9. Figure 3 As shown in the title 1, the substrate 1 is fixed on the inner wall of the ceramic tube shell 6, and the substrate 1 is provided with a bonding point 2 corresponding to the position of the photovoltaic diode chip 8 on the upper end face, the photovoltaic diode chip 8 is connected with the bonding point 2 through the metal wire in the substrate 1, and the bonding point 2 is connected with the field effect tube through the bonding wire. The bonding wire does not block the opposite surface of the photovoltaic diode 8 and the light emitting diode 9.

[0031] The working principle of the utility model is: when the input end of the light isolation switch is not electrified, the gate of output type field effect tube V1 or V1, V2 has no voltage, at this time, the drain-source of field effect tube V1 or V1, V2 is in off state, namely, the output ends of the light isolation switch are in off state. When the input is electrified, infrared light is emitted through the light emitting diode D1, the photovoltaic E1 is irradiated, the photovoltaic E1 generates voltage and current to drive the field effect tube V1 or V1, V2, at this time, the gate of field effect tube V1 or V1, V2 has voltage, then the drain-source of field effect tube V1 or V1, V2 is conducted, namely, the light isolation switch is in on state.

[0032] Figures 1-4 As shown in the title 1, the substrate 1 is fixed on the inner wall of the ceramic tube shell 6, and the substrate 1 is provided with a bonding point 2 corresponding to the position of the photovoltaic diode chip 8 on the upper end face, the photovoltaic diode chip 8 is connected with the bonding point 2 through the metal wire in the substrate 1, and the bonding point 2 is connected with the field effect tube through the bonding wire. The bonding wire does not block the opposite surface of the photovoltaic diode 8 and the light emitting diode 9. Figures 7-8 As shown in the title 1, the substrate 1 is fixed on the inner wall of the ceramic tube shell 6, and the substrate 1 is provided with a bonding point 2 corresponding to the position of the photovoltaic diode chip 8 on the upper end face, the photovoltaic diode chip 8 is connected with the bonding point 2 through the metal wire in the substrate 1, and the bonding point 2 is connected with the field effect tube through the bonding wire. The bonding wire does not block the opposite surface of the photovoltaic diode 8 and the light emitting diode 9.

Claims

1. A high packing density optical disconnector comprising a ceramic housing (6), characterized in that: The bottom of the ceramic tube shell (6) is processed into multiple steps, and the same number of metallization areas corresponding to each step are processed on each step; the light emitting diode chip (9) is installed on the metallization area of the lowest step, the substrate (1) is arranged above the lowest step, the photovoltaic diode chip (8) corresponding to the position of the light emitting diode chip (9) is installed on the lower end surface of the substrate (1), and the field effect tube is installed on the metallization area of the remaining steps. The bottom of the ceramic tube shell (6) is provided with a plurality of external pins (7) connected with the light emitting diode chip (9) and the field effect tube respectively.

2. The high packing density optical isolator of claim 1, wherein: Isolation walls are further arranged between adjacent light emitting diode chips (9).

3. The high assembly density optical isolation switch as described in claim 1, characterized in that: The external pins (7) are connected with the light emitting diode chip (9) or the field effect tube through the metal wires at the bottom of the ceramic tube shell (6), two poles of each light emitting diode chip (9) are connected with two external pins (7) respectively, and the position corresponding field effect tubes on the multiple steps are connected through two external pins (7).

4. The high packing density optical isolator of claim 3, wherein: the first and second optical isolators are mounted on the substrate in a side-by-side configuration; and the first and second optical isolators are mounted on the substrate in a back-to-back configuration. The external pins (7) connected with the light emitting diode chip (9) and the field effect tube respectively extend out of the ceramic tube shell (6) from the opposite ends of the bottom of the ceramic tube shell (6).

5. The high packing density optical isolator of claim 1, wherein: the first and second optical isolators are mounted on the substrate in a side-by-side configuration; and the first and second optical isolators are mounted on the substrate in a back-to-back configuration. The substrate (1) is fixed on the inner wall of the ceramic tube shell (6), the upper end surface of the substrate (1) is provided with a bonding point (2) corresponding to the position of the photovoltaic diode chip (8), the photovoltaic diode chip (8) is connected with the bonding point (2) through the metal wires in the substrate (1), and the bonding point (2) is connected with the field effect tube through the bonding wire.

6. The high packing density optical isolator of claim 1, wherein: the first and second optical isolators are mounted on the same substrate; and the first and second optical isolators are mounted on the same substrate in a side-by-side configuration. The top of the substrate (1) is further provided with an edge sealing ring (5), and the top of the edge sealing ring (5) is closed by a cover plate (10). The top of the substrate (1) is further provided with an edge sealing ring (5), and the top of the edge sealing ring (5) is closed by a cover plate (10).

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