Plastic packaging structure of IGBT module for SOT-227 packaging and semiconductor device
By adopting the SOT-227 packaging structure and molding process in the IGBT module, the problems of existing IGBT modules being unable to meet power requirements and having low production efficiency are solved, achieving a more efficient and lower-cost packaging solution.
Patent Information
- Application Number
- CN202423154558.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-20
- Publication Date
- 2025-11-28
- Estimated Expiration
- 2034-12-20
AI Technical Summary
The existing IGBT module DBC structure cannot meet the increasing power demand, lacks scalability and versatility, and suffers from air bubbles and moisture problems during the packaging process, resulting in low production efficiency and high cost.
The SOT-227 packaged plastic encapsulation structure includes a DBC board, a C-terminal region, an E-terminal region, and a G-terminal region on the substrate. The IGBT chip and FRD chip are located in the C-terminal region and encapsulated with a protective layer made of epoxy resin. Stable connection and protection of the chips are achieved through solder paste soldering and automated plastic encapsulation process.
It increases the chip placement area to accommodate chips of different sizes and higher power, reduces production costs, improves production efficiency and molding accuracy, reduces bubble problems, and enhances moisture control and heat dissipation capabilities.
Smart Images
Figure CN223612420U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model belongs to IGBT module packaging technical field, concretely relates to the plastic package structure and semiconductor device for SOT -227 package IGBT module. BACKGROUND
[0002] IGBT is a kind of device by MOSFET and bipolar transistor compliance, it fuses the advantages of the two devices, both has the advantages of MOSFET device drive power small and switching speed fast, also has the advantage of bipolar device saturation voltage drop low and capacity, its frequency characteristic is between MOSFET and power transistor, can normally work at several tens KHZ frequency range, widely used in modern industrial electronic technology, such as frequency converter, air conditioner, welding machine, photovoltaic, automobile and other industries;But, as shown in the related art, the DBC structure layout of IGBT module cannot meet the increasing power demand, there is deficiency in expansibility and universality, if there is the demand of increasing module power, chip area becomes large, the existing DBC structure cannot place chip, leading to the failure to achieve the established target, and the existing packaging structure operation process is prone to bubble, moisture and water vapor, long production cycle, low production efficiency, high production cost, Figure 1
[0003] Therefore, due to the low production efficiency of IGBT module packaging structure and the increasing power demand, it is necessary to design a plastic package structure and semiconductor device for SOT-227 package IGBT module.
[0004] It should be noted that the above information disclosed in the background section of the present application is only for understanding the background of the present application, therefore, the above description is not considered as prior art information. INVENTION CONTENTS
[0005] The present application provides a plastic package structure and semiconductor device for SOT-227 package IGBT module.
[0006] In the first aspect, the present application provides a plastic package structure for SOT-227 package IGBT module, comprising:
[0007] a substrate, the substrate is provided with a DBC plate;
[0008] The DBC plate comprises a C pole region, an E pole region and a G pole region;
[0009] The C pole region is arranged between the E pole region and the G pole region;
[0010] The C pole region is provided with IGBT chip and FRD chip.
[0011] In an alternative embodiment, the side of the C pole region is provided with a protrusion, the length of the protrusion being less than the length of the side of the C pole region, so that the protrusion and the edge of the corresponding C pole region form a semi-enclosed notch region, and the G pole region is arranged in the notch region.
[0012] In an alternative embodiment, a protective layer is arranged on the substrate, the protective layer completely covering the DBC plate.
[0013] The protective layer is made of epoxy resin.
[0014] In an alternative embodiment, the IGBT chip is connected to the E pole region through a first connecting line.
[0015] The IGBT chip is connected to the G pole region through a second connecting line.
[0016] In an alternative embodiment, the FRD chip is connected to the E pole region through a third connecting line.
[0017] In an alternative embodiment, both ends of the E pole region in the length direction are connected to E pole terminals.
[0018] The G pole region is connected to a G pole terminal.
[0019] The C pole region is connected to a C pole terminal.
[0020] One of the E pole terminals and the G pole terminal extends out of the substrate from one side of the substrate, and the other E pole terminal and the C pole terminal extend out of the substrate from the other side of the substrate.
[0021] In an alternative embodiment, the protective layer is provided with several nuts.
[0022] In an alternative embodiment, the IGBT chip and the FRD chip are both soldered to the C pole region through tin paste.
[0023] In an alternative embodiment, the E pole terminal is soldered to the E pole region through tin paste.
[0024] The G pole terminal is soldered to the G pole region through tin paste.
[0025] The C pole terminal is soldered to the C pole region through tin paste.
[0026] In a second aspect, the embodiments of the present disclosure further provide a device adopting the IGBT module plastic packaging structure for SOT-227 packaging.
[0027] The utility model discloses a beneficial effect is, the plastic package structure of SOT227IGBT module, include: substrate, be provided with DBC board on the substrate, the DBC board includes: C pole area, E pole area and G pole area, the C pole area is arranged between the E pole area and G pole area, be provided with IGBT chip and FRD chip in the C pole area, and then realized the chip placement area that increased, can better cope with future more different size's chip combination and higher power chip.
[0028] Other features and advantages of the present application will be further described in the following specification, and some of them become apparent from the specification, or are understood by practicing the present application. The purpose and other advantages of the present application are realized and obtained by the structure specifically pointed out in the specification and drawings.
[0029] In order to make the above-mentioned purpose, features and advantages of the utility model more obvious and easy to understand, the text will be the preferred embodiment, and cooperate with the attached drawing, and make detailed description as follows. BRIEF DESCRIPTION OF DRAWINGS
[0030] In order to more clearly illustrate the specific embodiment of the utility model or the technical scheme in the prior art, the following will be briefly introduced to the drawings needed to be used in the specific embodiment or prior art description, obviously, the drawings in the following description is some embodiments of the utility model, for those skilled in the art, without creative labor, according to these drawings, other drawings can also be obtained.
[0031] Figure 1 For chip area layout schematic diagram in related art;
[0032] Figure 2 For the internal structure schematic diagram of IGBT module plastic package structure for SOT-227 package provided by the embodiment of the present disclosure;
[0033] Figure 3 For chip area layout schematic diagram provided by the embodiment of the present disclosure;
[0034] Figure 4 For the protective layer structure schematic diagram provided by the embodiment of the present disclosure;
[0035] Figure 5 For the schematic diagram after trimming of the excess part provided by the embodiment of the present disclosure;
[0036] Figure 6 For the structure schematic diagram of IGBT module plastic package structure for SOT-227 package provided by the embodiment of the present disclosure;
[0037] Figure 7A plurality of device synchronization processing state schematic diagrams provided by the embodiments of the present disclosure.
[0038] In the drawings:
[0039] 1 substrate, 2 DBC board, 3 C pole area, 4 E pole area, 5 G pole area, 6 convex part, 7 IGBT chip, 8 FRD chip, 9 protective layer, 10 first connecting line, 11 second connecting line, 12 third connecting line, 13 E pole terminal, 14 G pole terminal, 15 C pole terminal, 16 nut, 17 missing part area. DETAILED DESCRIPTION
[0040] In order to make the purpose, technical scheme and advantages of the embodiments of the present application clearer, the technical scheme of the present application will be described clearly and completely below with reference to the drawings. Obviously, the described embodiments are some embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.
[0041] As used herein, the phrases "in one embodiment", "according to one embodiment", "in some embodiments", and the like generally mean the fact that a particular feature, structure, or characteristic described after the phrase can be included in at least one embodiment of the present disclosure. Therefore, the particular feature, structure, or characteristic can be included in more than one embodiment of the present disclosure, so that these phrases do not necessarily refer to the same embodiment. As used herein, the terms "example", "exemplary", and the like are used as an example, instance, or illustration. Any implementation, aspect, or design described as "example" or "exemplary" in the present document is not necessarily interpreted as preferred or superior to other implementations, aspects, or designs. On the contrary, the use of the terms "example", "exemplary", and the like is intended to present the concept in a specific manner.
[0042] Some embodiments of the present application will be described in detail below with reference to the accompanying drawings. In the case of no conflict, the following embodiments and features in the embodiments can be combined with each other.
[0043] As Figure 2As shown, at least one disclosed embodiment provides a plastic encapsulation structure for an IGBT module in an SOT-227 package, comprising: a substrate 1, on which a DBC board 2 is disposed; the DBC board 2 is an insulating copper-clad laminate; the DBC board 2 includes: a collector region 3, an emitter region 4, and a gate region 5; the collector region 3 is disposed between the emitter region 4 and the gate region 5; an IGBT chip 7 and an FRD chip 8 are disposed in the collector region 3, thereby increasing the chip placement area, i.e., the collector region 3, which can better accommodate future combinations of chips of different sizes and higher power chips; by setting the collector region 3, the emitter region 4, and the gate region 5, the area size of the collector region 3 is increased, thereby increasing the chip placement area, which can meet the placement requirements of larger IGBT chips 7 and FRD chips 8, etc.; preparing for the subsequent launch of higher power modules without frequent updates to the DBC board 2, saving corresponding sample production time. The collector is the collector, the emitter is the emitter, and the gate is the gate.
[0044] like Figure 3 As shown, in one optional embodiment, a protrusion 6 is provided on the side of the C-polar region 3. The length of the protrusion 6 is less than the length of the side of the C-polar region 3, so that the protrusion 6 and the edge of the corresponding C-polar region 3 form a semi-enclosed missing region 17. The G-polar region 5 is disposed in the missing region 17. The G-polar region 5 only needs to be connected to the IGBT chip 7. By providing the protrusion 6, the size of the G-polar region 5 is reduced. While meeting the requirement of connecting the G-polar region 5 to the IGBT chip 7, the size of the G-polar region 5 is further reduced, thereby increasing the area size of the C-polar region 3, and further increasing the area size of the chip placement area.
[0045] The IGBT chip 7 has an emitter (E) terminal on one side and a collector (C) terminal on the other side, and controls the use of the module through the gate (G) signal.
[0046] Existing encapsulation methods use a potting structure, which requires not only fixing and sealing the outer shell and base plate with sealant, but also filling the shell and base plate with organic polymer materials such as silicone and degassing them, followed by high-temperature treatment to harden them and achieve the effect of protecting the internal circuit structure. This method requires a large number of tools and fixing equipment and involves many process steps. Furthermore, the production process requires individual products to be processed, resulting in small production scale, low production efficiency, high material and labor costs, and difficulty in controlling the flow of silicone, which is prone to air bubble problems.
[0047] like Figure 4As shown in the optional embodiment, the substrate 1 is provided with a protective layer 9, which completely covers the DBC board 2; the protective layer 9 is made of epoxy resin; during production, the substrate 1 with the IGBT chip 7 and the FRD chip 8 welded thereon is placed into a plastic encapsulation machine and a fixed mold, and the epoxy resin is added for plastic encapsulation to form the protective layer 9; after the epoxy resin is injected into the mold and heated and solidified, the mold is demolded, which has high automation degree, can encapsulate multiple products at a time, has high processing efficiency, low production cost, high forming precision, and the epoxy resin is not prone to problems such as bubble generation, further improves the quality of the product, and has better moisture control and heat dissipation capacity and lower stray inductance.
[0048] In an optional embodiment, the IGBT chip 7 is connected with the E pole region 4 through a first connecting wire 10; the IGBT chip 7 is connected with the G pole region 5 through a second connecting wire 11; the FRD chip 8 is connected with the E pole region 4 through a third connecting wire 12; the connection of the IGBT chip 7 and the FRD chip 8 with each region is realized through each connecting wire; the first connecting wire 10, the second connecting wire 11 and the third connecting wire 12 can all be made of copper wire.
[0049] As shown in the optional embodiment, the E pole region 4 is connected with the G pole region 5 through a first connecting wire 10; the IGBT chip 7 is connected with the E pole region 4 through a second connecting wire 11; the FRD chip 8 is connected with the E pole region 4 through a third connecting wire 12; the connection of the IGBT chip 7 and the FRD chip 8 with each region is realized through each connecting wire; the first connecting wire 10, the second connecting wire 11 and the third connecting wire 12 can all be made of copper wire. Figure 5 As shown in the optional embodiment, both ends of the E pole region 4 in the length direction are connected with E pole terminals 13; the G pole region 5 is connected with a G pole terminal 14; the C pole region 3 is connected with a C pole terminal 15, and the C pole terminal 15 is connected with the IGBT chip 7 and the FRD chip 8; one of the E pole terminals 13 and the G pole terminal 14 extend out of the substrate 1 from one side of the substrate 1, and the other E pole terminal 13 and the C pole terminal 15 extend out of the substrate 1 from the other side of the substrate 1; each terminal can be connected with other external devices and the like.
[0050] In an optional embodiment, the protective layer 9 is provided with a plurality of nuts 16, and the epoxy resin injected to form the protective layer 9 can be provided with blind holes corresponding to the nuts 16 and the like for setting the nuts 16.
[0051] In an optional embodiment, the IGBT chip 7 and the FRD chip 8 are both welded on the C pole region 3 through solder paste; the solder paste welding mode can realize stable connection of each chip.
[0052] In an optional embodiment, the E pole terminal 13 is welded on the E pole region 4 through solder paste; the G pole terminal 14 is welded on the G pole region 5 through solder paste; the C pole terminal 15 is welded on the C pole region 3 through solder paste; the solder paste welding mode can realize stable connection of each terminal.
[0053] As shown in the optional embodiment, the E pole region 4 is connected with the G pole region 5 through a first connecting wire 10; the IGBT chip 7 is connected with the E pole region 4 through a second connecting wire 11; the FRD chip 8 is connected with the E pole region 4 through a third connecting wire 12; the connection of the IGBT chip 7 and the FRD chip 8 with each region is realized through each connecting wire; the first connecting wire 10, the second connecting wire 11 and the third connecting wire 12 can all be made of copper wire. Figure 6 andFigure 7 As shown, first, the DBC plate 2 is mounted on the substrate 1 by means of tin paste welding, then the IGBT chip 7 and the FRD chip 8 are welded on the C pole area 3 by means of tin paste, the IGBT chip 7 is connected with the E pole area 4 through the first connecting wire 10, the IGBT chip 7 is connected with the G pole area 5 through the second connecting wire 11, the FRD chip 8 is connected with the E pole area 4 through the third connecting wire 12, the circuit interconnection is formed, the E pole terminal 13 is welded on the E pole area 4 by means of tin paste, the G pole terminal 14 is welded on the G pole area 5 by means of tin paste, the C pole terminal 15 is welded on the C pole area 3 by means of tin paste, then the substrate 1 with the welded chips and elements is placed into a mold with a corresponding shape, the molding is formed by adding epoxy resin to form the protection layer 9, a plurality of substrates 1 are connected together, and the plurality of substrates 1 can be processed synchronously, so that the processing efficiency is high, the production cost is low, the forming precision is high, the substrate 1 and the terminals are cut off after the protection layer 9 is formed by a cutting machine, the nut 16 is placed on the protection layer 9, and finally the terminals are bent to form a product, so that the structure and the process steps are simpler, the production environment is highly automated, the production efficiency is improved, the production cycle is reduced, and the cost is reduced.
[0054] In at least one other disclosed embodiment, a semiconductor device is provided that employs the above-described IGBT module plastic packaging structure for SOT-227 packaging.
[0055] In summary, the IGBT module plastic packaging structure for SOT-227 packaging includes: a substrate 1, wherein the substrate 1 is provided with a DBC plate 2; the DBC plate 2 includes: a C pole area 3, an E pole area 4 and a G pole area 5; the C pole area 3 is arranged between the E pole area 4 and the G pole area 5; the C pole area 3 is provided with an IGBT chip 7 and an FRD chip 8, thereby increasing the chip placement area and better coping with future combinations of more different sizes of chips and higher power chips.
[0056] In the description of the embodiments of the present application, unless otherwise clearly defined and limited, the terms "mounting", "connecting", "connection" should be understood in a broad sense, for example, can be fixedly connected, can be detachably connected, or integrally connected, can be mechanically connected, can be electrically connected, can be directly connected, can be indirectly connected through an intermediate medium, and can be the communication between two elements. For ordinary skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.
[0057] In the description of the utility model, it is necessary to explain, the term "center", "upper", "lower", "left", "right", "vertical", "horizontal", "internal", "external" and so on indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawing, only for the convenience of describing the utility model and simplifying the description, and not indicate or imply that the indicated device or element must have a particular orientation, a particular orientation and operation, therefore, it cannot be understood as a limitation on the utility model. In addition, terms such as "first", "second" and other numerical terms are used in this paper, and no sequence or order is implied, unless the text indicates explicitly. Therefore, the above-discussed first element, component, area, layer or section can be referred to as the second element, component, area, layer or section without departing from the teachings of the example embodiments.
[0058] Spatially relative terms, such as "inner", "outer", "below", "below", "lower", "above", "upper" and the like, can be used herein to facilitate description of the relationship of one element or feature to another element or feature as illustrated in the drawings. In addition to the orientation depicted in the drawings, the spatially relative terms can be intended to cover different orientations of the device in use or operation. For example, if the device in the drawing is turned over, the element described as "below" or "under" the other element or feature will be oriented "above" the other element or feature. Therefore, the example term "below" can cover the above and below orientations. The device can be oriented in other ways (rotated 90 degrees or in other orientations), and the spatially relative descriptors used herein are interpreted accordingly.
[0059] With the above ideal embodiments according to the utility model as the inspiration, through the above description, relevant staff can make various changes and modifications without deviating from the scope of the technical idea of the utility model. The technical scope of the utility model is not limited to the content in the specification, and the technical scope must be determined according to the scope of claims.
Claims
1. A plastic encapsulation structure for an IGBT module in an SOT-227 package, characterized in that, include: A substrate (1) on which a DBC board (2) is disposed; The DBC board (2) includes: a C pole region (3), an E pole region (4), and a G pole region (5); The C-polar region (3) is located between the E-polar region (4) and the G-polar region (5); The C-polar region (3) is provided with an IGBT chip (7) and an FRD chip (8).
2. The plastic encapsulation structure for an IGBT module in an SOT-227 package as described in claim 1, characterized in that: The C-polar region (3) has a protrusion (6) on its side. The length of the protrusion (6) is less than the length of the side of the C-polar region (3) so that the protrusion (6) and the edge of the corresponding C-polar region (3) form a semi-enclosed missing area (17). The G-polar region (5) is located in the missing area (17).
3. The plastic encapsulation structure for an IGBT module in an SOT-227 package as described in claim 1, characterized in that: A protective layer (9) is provided on the substrate (1), and the protective layer (9) completely covers the DBC board (2); The protective layer (9) is made of epoxy resin.
4. The plastic encapsulation structure for an IGBT module in an SOT-227 package as described in claim 1, characterized in that: The IGBT chip (7) is connected to the E-polar region (4) via a first connection (10); The IGBT chip (7) is connected to the G pole region (5) via a second connection (11).
5. The plastic encapsulation structure for an IGBT module in an SOT-227 package as described in claim 1, characterized in that: The FRD chip (8) is connected to the E-polar region (4) via a third connection (12).
6. The plastic encapsulation structure for an IGBT module in an SOT-227 package as described in claim 1, characterized in that: Both ends of the E-pole region (4) along its length are connected to E-pole terminals (13). The G pole region (5) is connected to the G pole terminal (14). The C-pole region (3) is connected to a C-pole terminal (15); One of the E-ends (13) and the G-end (14) protrude from one side of the substrate (1), and the other E-end (13) and the C-end (15) protrude from the other side of the substrate (1).
7. The plastic encapsulation structure for an IGBT module in an SOT-227 package as described in claim 3, characterized in that: The protective layer (9) is provided with a number of nuts (16).
8. The plastic encapsulation structure for an IGBT module in an SOT-227 package as described in claim 1, characterized in that: Both the IGBT chip (7) and the FRD chip (8) are soldered to the C-polarity region (3) using solder paste.
9. The plastic encapsulation structure for an IGBT module in an SOT-227 package as described in claim 6, characterized in that: The E-terminal (13) is soldered onto the E-terminal region (4) using solder paste; The G-terminal (14) is soldered onto the G-terminal region (5) using solder paste; The C-terminal (15) is soldered onto the C-terminal region (3) using solder paste.
10. A semiconductor device, characterized in that, The plastic encapsulation structure for IGBT modules in SOT-227 packages as described in any one of claims 1-9 is adopted.