Mask plate
By employing an alternating layered structure of metal and inorganic layers in the photomask and utilizing an etching process to form a high PPI photomask, the problems of high cost and low precision in existing technologies are solved, achieving low-cost and high-efficiency photomask fabrication.
Patent Information
- Application Number
- CN202423152032.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-19
- Publication Date
- 2025-12-05
- Estimated Expiration
- 2034-12-19
AI Technical Summary
Existing technologies struggle to produce high pixel density (PPI) photomasks at low cost, especially in the production of AMOLED display panels, where traditional fabrication methods such as chemical etching and laser engraving suffer from limitations in precision or high costs.
A mask with alternating layers of metal and inorganic layers is formed by etching to create a high PPI mask. The mask consists of a substrate, a mask layer, and an auxiliary layer. The mask layer is composed of a copper layer and a silicon oxide thin film or a silicon nitride thin film, and the auxiliary layer is composed of corresponding metal and inorganic layers.
This enables the low-cost fabrication of high PPI photomasks, improving preparation efficiency and reducing production costs.
Smart Images
Figure CN223633438U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to display technical field especially relates to a mask plate. BACKGROUND
[0002] Under the development trend of current display industry, more and more new display technologies are developed and rapidly put into commercial use, for example, the very mature liquid crystal display (LCD) technology and hard-screen active matrix organic light emitting diode (AMOLED) display technology, the flexible AMOLED technology and micro light emitting diode (Micro-LED) display technology, mini light emitting diode (Mini-LED) display technology and other technologies that are in vigorous development.
[0003] For traditional LCD, the application form is relatively limited. However, due to its high maturity and low cost, the display brightness can be improved by improving the backlight brightness, so it becomes the most popular solution for low-cost high pixel density (PPI), among which virtual reality (VR) technology is a representative. Due to the requirement of high PPI and high brightness, LCD often becomes a limited choice. However, with the improvement of VR resolution, the aperture ratio of LCD becomes smaller and smaller, and its transmittance decreases significantly. The display brightness needs to be further improved by increasing the brightness of the backlight, which further increases the power consumption of LCD display. It is difficult for the mainstream all-in-one machine of VR to accept the problem of high power consumption, and the demand for high brightness cannot be met, which further restricts the application of LCD, and at the same time, it no longer has outstanding advantages in display performance.
[0004] AMOLED technology, as a new type of self-luminous technology, is easy to realize various free-form designs. The production of high-pixel-density AMOLED display panels requires the use of a fine metal mask (FMM) with very thin thickness and small thermal expansion coefficient as a mask plate (Mask) to evaporate the organic luminophore on the AMOLED display panel. Currently, the mask plate for AMOLED is usually made of invar (INVAR, also known as invar steel) by chemical etching method, but due to the limitation of etching precision, it is difficult to achieve high PPI. In order to achieve high PPI, laser (Laser) engraving metal processing method can be used, but the cost of laser engraving metal is huge and the production time is long. UTILITY MODEL CONTENTS
[0005] The utility model provides a mask plate to realize the mask plate of high PPI at low cost.
[0006] To solve the above problems, the utility model provides technical scheme as follows:
[0007] The utility model discloses a mask plate, it includes:
[0008] The substrate is provided with a plurality of first openings in array arrangement on the substrate;
[0009] The mask layer is arranged on one side of the substrate, and a mask pattern is arranged at the position corresponding to each first opening, and each mask pattern includes a plurality of through holes communicated with the first opening.
[0010] The mask layer includes at least one metal layer and at least one inorganic layer arranged alternately in layers.
[0011] In the mask plate provided in the utility model embodiment, the mask layer includes a first metal layer arranged on one side of the substrate and a first inorganic layer arranged on the side of the first metal layer away from the substrate.
[0012] In the mask plate provided in the utility model embodiment, the mask layer further includes a second inorganic layer arranged between the first metal layer and the substrate.
[0013] In the mask plate provided in the utility model embodiment, the substrate is a glass substrate.
[0014] In the mask plate provided in the utility model embodiment, the metal layer of the mask layer is a copper layer, and the inorganic layer of the mask layer is at least one of a silicon oxide film and a silicon nitride film.
[0015] In the mask plate provided in the utility model embodiment, the plurality of through holes on each mask pattern include adjacent first through holes and second through holes, and the aperture of the first through hole is larger than the aperture of the second through hole.
[0016] In the mask plate provided in the utility model embodiment, the mask plate further includes an auxiliary layer arranged on the side of the substrate away from the mask layer, the auxiliary layer includes at least one metal layer and at least one inorganic layer arranged alternately in layers, the auxiliary layer is provided with a second opening at the position corresponding to the first opening, and the second opening is communicated with the first opening.
[0017] In the mask plate provided in the utility model embodiment, the auxiliary layer includes a second metal layer arranged on the side of the substrate away from the mask layer and a third inorganic layer arranged on the side of the second metal layer away from the substrate.
[0018] The auxiliary layer further comprises a fourth inorganic layer arranged between the second metal layer and the substrate.
[0019] The metal layer of the auxiliary layer is a copper layer, and the inorganic layer of the auxiliary layer is at least one of a silicon oxide film and a silicon nitride film.
[0020] The mask plate comprises a substrate and a mask layer arranged on one side of the substrate, the mask layer is provided with a mask pattern at the position of each first opening on the substrate, each mask pattern comprises a plurality of through holes in communication with the first opening, and the mask layer comprises at least one metal layer and at least one inorganic layer arranged alternately in layers. BRIEF DESCRIPTION OF DRAWINGS
[0021] In order to more clearly illustrate the technical solutions in the embodiments or the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the utility model, and for those skilled in the art, other drawings can also be obtained without creative labor on the basis of these drawings.
[0022] Figure 1 A sectional structure schematic view of the mask plate provided in the embodiments of the utility model.
[0023] Figure 2 A plane structure schematic view of the mask layer on the mask plate provided in the embodiments of the utility model.
[0024] Figure 3 A plane structure schematic view of the substrate on the mask plate provided in the embodiments of the utility model.
[0025] Figure 4 A plane structure schematic view of the mask plate provided in the embodiments of the utility model.
[0026] Figure 5 Another sectional structure schematic view of the mask plate provided in the embodiments of the utility model.
[0027] Figure 6 A flowchart of the mask plate preparation method provided in the embodiments of the utility model.
[0028] Figure 7 A schematic view of forming the mask layer on the substrate in the mask plate preparation method provided in the embodiments of the utility model.
[0029] Figure 8 for forming a photoresist on the structure of Figure 7 .
[0030] Figure 9 for forming a mask pattern on the structure of Figure 8 .
[0031] Figure 10 for forming a first opening on the structure of Figure 9 . DETAILED DESCRIPTION
[0032] The following description of the embodiments is presented with reference to the accompanying drawings, which are intended to exemplify specific embodiments in which the present application can be practiced. Directional terms as used in the present application, such as [up], [down], [front], [back], [left], [right], [inner], [outer], [side] and the like, are used with reference to the accompanying drawings. Accordingly, the directional terms are used for illustration and understanding of the present application, and are not used to limit the present application. In the drawings, similar elements are designated with like reference numerals. In the drawings, the thicknesses of some layers and regions are exaggerated for clarity and ease of description. That is, the size and thickness of each component shown in the drawings are arbitrarily shown, but the present application is not limited thereto.
[0033] Please refer to Figures 1 to 4 , Figure 1 is a sectional structure schematic view of a mask plate provided by an embodiment of the present application, Figure 2 is a plan structure schematic view of a mask layer on a mask plate provided by an embodiment of the present application, Figure 3 is a plan structure schematic view of a substrate on a mask plate provided by an embodiment of the present application, Figure 4 is a plan structure schematic view of a mask plate provided by an embodiment of the present application. Referring to Figure 1 , the mask plate includes a substrate 10 and a mask layer 20 disposed on one side of the substrate 10. The substrate 10 is provided with a plurality of first openings 101 arranged in an array, and each first opening 101 penetrates the substrate 10. The mask layer 20 is provided with a mask pattern 200 at a position corresponding to each first opening 101, and each mask pattern 200 includes a plurality of through holes 201 in communication with the first openings 101, and each through hole 201 penetrates the mask layer 20. The mask layer 20 includes at least one metal layer and at least one inorganic layer arranged alternately in layers. In this way, by disposing at least one metal layer and at least one inorganic layer arranged alternately in layers on the substrate 10, the first openings 101 and the mask patterns 200 can be formed simultaneously by etching process, so as to realize a mask plate 100 with high PPI at low cost.
[0034] In an embodiment, continuing to refer to Figure 1 The mask layer 20 includes a first metal layer 21 disposed on one side of the substrate 10 and a first inorganic layer 22 disposed on a side of the first metal layer 21 away from the substrate 10. The substrate 10 is a glass substrate 10 or the like. The metal layer of the mask layer 20 is a copper layer or the like, and the inorganic layer of the mask layer 20 is at least one of a silicon oxide film, a silicon nitride film, or the like. For example, the first metal layer 21 is a copper layer or the like, and the first inorganic layer 22 is at least one of a silicon oxide film, a silicon nitride film, or the like.
[0035] Optionally, the mask layer 20 further includes a second inorganic layer 23 disposed between the first metal layer 21 and the substrate 10. The material of the second inorganic layer 23 is the same as that of the first inorganic layer 22, such as both being silicon oxide or silicon nitride. Of course, in other embodiments, the material of the second inorganic layer 23 can also be different from that of the first inorganic layer 22, such as the material of the second inorganic layer 23 being silicon nitride and the material of the first inorganic layer 22 being silicon oxide.
[0036] The via hole 201 on the mask layer 20 penetrates the first inorganic layer 22, the first metal layer 21, and the second inorganic layer 23, and the via hole 201 and the portion of the mask layer 20 between adjacent via holes 201 together constitute the mask pattern 200. The plurality of via holes 201 on the mask pattern 200 are uniformly arranged, and the aperture of each via hole 201 is consistent, as shown in Figure 2 Of course, in other embodiments, the plurality of via holes 201 on each mask pattern 200 can also be designed according to actual needs, such as each mask pattern 200 including adjacent first via holes and second via holes, the aperture of the first via hole being larger than that of the second via hole. Moreover, the aperture and shape of the via hole 201 can be designed according to actual needs, such as being designed according to the shape and size of the sub-pixel to be evaporated on the display panel.
[0037] Referring to Figure 3 and Figure 4 The via hole 201 on the mask layer 20 communicates with the first opening 101 on the substrate 10, each first opening 101 corresponds to a plurality of via holes 201, and the orthographic projection of each via hole 201 on the substrate 10 is located within the first opening 101. The specific number of via holes 201 corresponding to each first opening 101 can be designed according to the number of sub-pixels to be evaporated on the display panel, and is not limited to the number and arrangement of via holes 201 shown in the drawings of the present application.
[0038] In an embodiment, referring to Figure 5 , Figure 5This is a schematic cross-sectional view of another mask template 100 provided in an embodiment of the present invention. Figure 1 The difference in the example mask 100 is that it further includes an auxiliary layer 30 disposed on the side of the substrate 10 away from the mask layer 20. The auxiliary layer 30 includes at least one metal layer and at least one inorganic layer stacked alternately. The auxiliary layer 30 has a second opening 301 at a position corresponding to the first opening 101, and the second opening 301 communicates with the first opening 101. The second opening 301 penetrates the auxiliary layer 30, and the size of the second opening 301 is the same as the size of the first opening 101. For example, in the thickness direction of the mask 100, the vertical orthographic projection of the second opening 301 coincides with the vertical orthographic projection of the first opening 101.
[0039] Optionally, the auxiliary layer 30 includes a second metal layer 31 disposed on the side of the substrate 10 away from the mask layer 20 and a third inorganic layer 32 disposed on the side of the second metal layer 31 away from the substrate 10. The metal layer of the auxiliary layer is a copper layer or the like, and the inorganic layer of the auxiliary layer is at least one of a silicon oxide film, a silicon nitride film, or the like. For example, the second metal layer 31 is a copper layer or the like, and the third inorganic layer 32 is at least one of a silicon oxide film, a silicon nitride film, or the like.
[0040] In one embodiment, the auxiliary layer 30 further includes a fourth inorganic layer 33 disposed between the second metal layer 31 and the substrate 10. The material of the fourth inorganic layer 33 is the same as that of the third inorganic layer 32, such as silicon oxide or silicon nitride. Of course, in other embodiments, the material of the fourth inorganic layer 33 may be different from that of the third inorganic layer 32; for example, the material of the fourth inorganic layer 33 may be silicon nitride, and the material of the third inorganic layer 32 may be silicon oxide. The second opening 301 penetrates the fourth inorganic layer 33, the second metal layer 31, and the third inorganic layer 32.
[0041] In one embodiment, the present invention also provides a method for preparing a photomask, the present invention being used to prepare... Figure 1 The example uses mask 100 as an example for illustration. Figures 6 to 10 , Figure 6 This is a schematic flowchart of the mask preparation method provided in an embodiment of the present invention. Figure 7 This is a schematic diagram illustrating the formation of a mask layer 20 on a substrate 10 in the mask preparation method provided in this embodiment of the present invention. Figure 8 In order to be in Figure 7 A schematic diagram of the structure forming photoresist. Figure 9 In order to be in Figure 8 A schematic diagram showing the formation of a mask pattern 200 on the structure.Figure 10 To form the first opening 101 on the structure of Figure 9 The schematic diagram of forming the first opening 101 on the structure of Figure 6 The mask plate preparation method comprises the following steps:
[0042] S401, providing a substrate 10, and forming a mask layer 20 on the substrate 10;
[0043] Referring to Figure 7 , a mask layer 20 is deposited on the substrate 10, and the mask layer 20 comprises at least one metal layer and at least one inorganic layer arranged alternately in layers. Specifically, a second inorganic layer 23, a first metal layer 21 and a first inorganic layer 22 are sequentially deposited on the substrate 10, the first metal layer 21 is located between the first inorganic layer 22 and the second inorganic layer 23, and the first inorganic layer 22 is located on the side of the first metal layer 21 away from the substrate 10. The substrate 10 is a glass substrate 10 or the like. The first metal layer 21 is a copper layer or the like, and the first inorganic layer 22 and the second inorganic layer 23 are at least one of a silicon oxide film, a silicon nitride film or the like.
[0044] S402, forming a first photoresist pattern 500 on the side of the substrate 10 away from the mask layer 20, and forming a second photoresist pattern 600 on the side of the mask layer 20 away from the substrate 10;
[0045] Referring to Figure 8 , a first photoresist layer is formed on the side of the substrate 10 away from the mask layer 20, and a second photoresist layer is formed on the side of the mask layer 20 away from the substrate 10. The first photoresist layer is exposed, developed and etched to form a first photoresist pattern 500, and the second photoresist layer is exposed, developed and etched to form a second photoresist pattern 600.
[0046] S403, using the second photoresist pattern 600 as a shield, performing a photolithography process on the mask layer 20 to form a mask pattern 200, each mask pattern 200 comprising a plurality of through holes 201;
[0047] Referring to Figure 9 , using the second photoresist as a shield, performing a photolithography process on the mask layer 20 to form a mask pattern 200, each mask pattern 200 comprising a plurality of through holes 201, the through holes 201 penetrating the mask layer 20, such as each of the through holes 201 penetrating the first inorganic layer 22, the first metal layer 21 and the second inorganic layer 23 in turn, and the mask layer 20 part between the through holes 201 and the adjacent through holes 201 together constituting the mask pattern 200. Alternatively, the plurality of through holes 201 on the mask pattern 200 are uniformly arranged, and the apertures of each of the through holes 201 are consistent.
[0048] S404, forming first openings 101 on the substrate 10 by using the first photoresist pattern 500 as a mask, each of the first openings 101 corresponding to one of the mask patterns 200 and being in communication with the through holes 201.
[0049] Referring to Figure 10 S404, forming first openings 101 on the substrate 10 by using the first photoresist pattern 500 as a mask, each of the first openings 101 corresponding to one of the mask patterns 200 and being in communication with the through holes 201. Figure 1 The mask plate 100.
[0050] According to the above embodiments, it can be known that:
[0051] The utility model provides a mask plate, mask plate includes the substrate and sets up in the mask layer of one side of the substrate, be provided with a plurality of first openings of array arrangement on the substrate, the mask layer is provided with mask pattern in the position of corresponding each first opening, each mask pattern includes a plurality of through -hole with first opening communication, the mask layer includes at least one metal layer and at least one inorganic layer of laminated alternately setting, thus, through setting at least one metal layer and at least one inorganic layer of laminated alternately on the substrate, can form first opening and mask pattern simultaneously by etching process, with low cost realizes the mask plate of high PPI.
[0052] In the above embodiments, the description of each embodiment has its own emphasis, and the parts not described in detail in a certain embodiment can be referred to the related description of other embodiments.
[0053] The above embodiments of the utility model are introduced in detail, the principle and implementation mode of the utility model are described by applying specific examples in this paper, and the above embodiment is only used to help understanding the technical scheme and core idea of the utility model; The person skilled in the art should understand that: it can still modify the technical scheme recorded in each of the above embodiments, or make equivalent replacement to part of the technical features; and these modifications or replacements do not make the essence of the corresponding technical scheme deviate from the scope of the technical scheme of each embodiment of the utility model.
Claims
1. A mask plate, characterized by, The application relates to a substrate and a mask layer. The substrate is provided with a plurality of first openings arranged in an array. The mask layer is arranged on one side of the substrate and is provided with a mask pattern at a position corresponding to each first opening. The mask layer comprises at least one metal layer and at least one inorganic layer arranged alternately in layers.
2. The mask plate according to claim 1, wherein The mask layer comprises a first metal layer arranged on one side of the substrate and a first inorganic layer arranged on a side of the first metal layer away from the substrate.
3. The mask plate according to claim 2, wherein The mask layer further comprises a second inorganic layer arranged between the first metal layer and the substrate.
4. The mask plate of claim 1, wherein, The substrate is a glass substrate.
5. The reticle of claim 1, wherein, The metal layer of the mask layer is a copper layer, and the inorganic layer of the mask layer is at least one of a silicon oxide film and a silicon nitride film.
6. The reticle of claim 1, wherein, The plurality of through holes on each mask pattern comprises adjacent first through holes and second through holes, wherein the aperture of the first through holes is larger than the aperture of the second through holes.
7. The mask plate according to any one of claims 1 to 6, wherein, The mask plate further comprises an auxiliary layer arranged on a side of the substrate away from the mask layer.
8. The mask plate according to claim 7, wherein The auxiliary layer comprises at least one metal layer and at least one inorganic layer arranged alternately in layers.
9. The mask plate according to claim 8, wherein The auxiliary layer is provided with a second opening at a position corresponding to the first opening.
10. The reticle of claim 7, wherein, The auxiliary layer comprises a second metal layer arranged on a side of the substrate away from the mask layer and a third inorganic layer arranged on a side of the second metal layer away from the substrate. The auxiliary layer further comprises a fourth inorganic layer arranged between the second metal layer and the substrate. The metal layer of the auxiliary layer is a copper layer, and the inorganic layer of the auxiliary layer is at least one of a silicon oxide film and a silicon nitride film.