Deposition pipeline structure and deposition equipment

Abstract

The utility model relates to a deposition pipeline structure and deposition equipment, and relates to the technical field of semiconductor equipment, the deposition pipeline structure comprises a conduction main body, the conduction main body is used for being arranged on the side wall of a reaction chamber, a first pipeline and a second pipeline which are isolated from each other are arranged in the conduction main body, and the first pipeline and the second pipeline both penetrate through the conduction main body; the first pipeline and the second pipeline are communicated to the reaction chamber, the path length of the first pipeline is smaller than that of the second pipeline, the first pipeline is used for conveying first reaction gas, and the second pipeline is used for conveying second reaction gas. Compared with the prior art, different reaction gases are conveyed through the first pipeline and the second pipeline which are different in path length, so that the different reaction gases can be input into the reaction chamber at different times, unnecessary physical and chemical reactions between the gases and substances in the chamber are avoided, and the deposition effect is ensured.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor equipment, in particular to a deposition pipeline structure and a deposition equipment. BACKGROUND

[0002] With the rapid development of the semiconductor industry, thin film deposition technology is a process method for depositing substances on the surface of a substrate to form a thin film, which is commonly used to prepare thin films of various materials. Typically, a wafer placed on a ground electrode is heated to 350 DEG C under high pressure, and then vapor deposition is performed.

[0003] In a conventional deposition process, a variety of special gases (such as silane, nitrogen) are used for thin film deposition, and the formed thin films include silicon dioxide (SiO2), silicon nitride (Si3N4) and low-stress silicon oxynitride (SiON) thin films. When the gas is introduced, the same flow rate and the same time are usually used as the introduction parameters, and different reaction gases are sent into the reaction chamber through the same pipeline. However, since there may be incomplete removal of oxygen or other reaction gases in the initial stage of the reaction chamber, the simultaneous feeding method may cause unnecessary physical and chemical reactions in the chamber, affecting the deposition effect. CONTENT

[0004] The purpose of the present application is to provide a deposition pipeline structure and a deposition equipment, which can make the timing of inputting different reaction gases into the reaction chamber different, thereby avoiding unnecessary physical and chemical reactions between the gases and the substances in the chamber, and ensuring the deposition effect.

[0005] In order to achieve the above-mentioned purpose, the embodiments of the present application are realized by the following scheme.

[0006] The embodiments of the present application provide a deposition pipeline structure, which comprises a conduction main body, the conduction main body is used for being arranged on the side wall of a reaction chamber, and the conduction main body is internally provided with a first pipeline and a second pipeline which are isolated from each other, the first pipeline and the second pipeline both penetrate through the conduction main body and are communicated to the reaction chamber, the path length of the first pipeline is smaller than the path length of the second pipeline, wherein the first pipeline is used for conveying a first reaction gas, and the second pipeline is used for conveying a second reaction gas.

[0007] In an optional embodiment, the through-body has a first end face and a second end face, the first end face is located in the reaction chamber, the second end face is used to engage with external pipelines, the first end face is provided with a first gas outlet hole and a second gas outlet hole, the first gas outlet hole is correspondingly communicated with the first pipeline, the second gas outlet hole is correspondingly communicated with the second pipeline, the second end face is provided with a first gas inlet hole and a second gas inlet hole, the first gas inlet hole is correspondingly communicated with the first pipeline and correspondingly engaged with a first reaction gas pipeline, the second gas inlet hole is correspondingly communicated with the second pipeline and correspondingly engaged with a second reaction gas pipeline.

[0008] In an optional embodiment, the through-body is L-shaped, the first pipeline is linearly bent, and the second pipeline is curvedly bent.

[0009] In an optional embodiment, the first pipeline comprises a first linear segment and a second linear segment which are engaged with each other, one end of the first linear segment is connected to the first gas inlet hole, the other end is connected to the second linear segment, one end of the second linear segment away from the first linear segment is connected to the first gas outlet hole, and the first linear segment and the second linear segment are perpendicular to each other.

[0010] In an optional embodiment, the second pipeline comprises a first curved segment, a second curved segment and a third curved segment, one end of the first curved segment is connected to the second gas inlet hole, the other end is connected to the second curved segment, one end of the second curved segment away from the first curved segment is connected to the third curved segment, and one end of the third curved segment away from the second curved segment is connected to the second gas outlet hole.

[0011] In an optional embodiment, the first curved segment has a plurality of first bends, the second curved segment has a plurality of second bends, and the third curved segment has a plurality of third bends, the first bends, the second bends and the third bends have the same curvature.

[0012] In an optional embodiment, the first gas inlet hole and the second gas inlet hole have the same diameter and are spaced apart along the thickness direction of the through-body.

[0013] The first gas outlet hole and the second gas outlet hole have the same diameter and are spaced apart along the thickness direction of the through-body.

[0014] In an optional embodiment, the surface of the through-body adjacent to the first end face is further provided with a first mounting fixing hole, the first mounting fixing hole is close to the first end face and correspondingly engaged with a first fixing member provided on the side wall of the reaction chamber.

[0015] In an optional embodiment, the surface of the conducting body adjacent to the second end face is further provided with a second mounting fixing hole, which is close to the second end face and correspondingly engages with a second fixing member arranged on the side wall of the reaction chamber.

[0016] In an optional embodiment, the second end face is provided with a first flow rate meter for detecting the flow rate of the first outlet gas at a position close to the first outlet hole, and is provided with a second flow rate meter for detecting the flow rate of the second outlet gas at a position close to the second outlet hole, and the first pipeline is further provided with a flow rate adjusting meter for adjusting the flow rate of the first reaction gas in the first pipeline so as to make the flow rates of the first reaction gas and the second reaction gas the same.

[0017] In another aspect, the utility model provides a kind of deposition equipment, including reaction chamber and the deposition pipeline structure in the foregoing embodiment, and the conducting body is arranged on the side wall of the reaction chamber.

[0018] Through the above technical scheme, the utility model embodiment is arranged in the conducting body first pipeline and second pipeline isolated from each other, wherein first pipeline and second pipeline all penetrate the conducting body, and are communicated to reaction chamber, and the path length of first pipeline is less than the path length of second pipeline, first pipeline is used to transport first reaction gas, and second pipeline is used to transport second reaction gas, and first reaction gas is more inclined to inert gas, so that part of inert gas can be passed into first, and then reaction gas is passed into second. Compared with the prior art, the utility model transports different reaction gases by first pipeline and second pipeline of different path lengths, so that the timing of different reaction gases inputting reaction chamber is different, so that unnecessary physical and chemical reactions between gas and material in cavity are avoided, and deposition effect is guaranteed.

[0019] Other features and advantages of the present application will be described in detail in the following specific embodiments. BRIEF DESCRIPTION OF DRAWINGS

[0020] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the drawings needed to be used in the embodiments. It should be understood that the following drawings only show some embodiments of the present application, and therefore should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can also be obtained without creative labor.

[0021] Figure 1 The schematic diagram of the deposition pipeline structure provided by the first embodiment of the present application;

[0022] Figure 2A perspective view of the deposition pipeline structure provided in the first embodiment of the present application;

[0023] Figure 3 For Figure 2 A cross-sectional view of the second pipeline;

[0024] Figure 4 For Figure 2 A cross-sectional view of the first pipeline.

[0025] Figure:

[0026] 100-deposition pipeline structure; 110-conducting body; 111-first end face; 113-second end face; 115-first flow rate meter; 117-second flow rate meter; 119-flow rate adjusting meter; 130-first pipeline; 131-first air inlet hole; 133-first air outlet hole; 135-first straight section; 137-second straight section; 150-second pipeline; 151-second air inlet hole; 153-second air outlet hole; 155-first curved section; 157-second curved section; 159-third curved section; 170-first mounting hole; 190-second mounting hole. DETAILED DESCRIPTION

[0027] In order to make the purpose, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be described clearly and completely below in combination with the drawings in the embodiments of the present application. Obviously, the described embodiments are some embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application described and shown in the drawings herein can be arranged and designed in various different configurations.

[0028] In the description of the present application, it should be noted that the directions or position relationships indicated by the terms “inner”, “outer” and the like are based on the directions or position relationships shown in the drawings, or the directions or position relationships in which the products of the present application are usually placed, and are only for the convenience of describing the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the devices or elements referred to must have a particular direction, be constructed and operated in a particular direction, and therefore cannot be understood as limiting the present application. In addition, the terms “first”, “second” and the like are only used for differentiation in description, and cannot be understood as indicating or implying relative importance.

[0029] In the description of the present application, it should also be noted that, unless otherwise explicitly specified and limited, the terms “provided”, “connected” should be understood broadly, for example, can be fixedly connected, can be detachably connected, or integrally connected; can be directly connected, or indirectly connected through an intermediate medium; can be connected inside two elements. For those skilled in the art, the specific meanings of the above terms in the present application can be understood according to the specific circumstances.

[0030] ReferenceFigures 1 to 4 The deposition pipeline structure 100 can make the mass flow rates of different reaction gases input into the reaction chamber tend to be the same, and improve the uniformity of the deposition reaction.

[0031] The deposition pipeline structure 100 comprises a through main body 110, the through main body 110 is arranged on the side wall of the reaction chamber, and the through main body 110 is internally provided with a first pipeline 130 and a second pipeline 150 which are isolated from each other, the first pipeline 130 and the second pipeline 150 both penetrate through the through main body 110 and are communicated to the reaction chamber, the path length of the first pipeline 130 is smaller than that of the second pipeline 150, wherein the first pipeline 130 is used for conveying the first reaction gas, and the second pipeline 150 is used for conveying the second reaction gas, wherein the first reaction gas can be nitrogen, and the second reaction gas can be SiH4.

[0032] It should be noted that, in the embodiment, the first pipeline 130 and the second pipeline 150 are used for conveying respectively, after the external pipelines start conveying the first reaction gas and the second reaction gas at the same time, and the path length of the first pipeline 130 is shorter, so that the first reaction gas can enter the reaction chamber first, and a protective layer is formed at the gas outlet end, the second reaction gas enters the reaction chamber with a lag, and because the first reaction gas performs peripheral protection, the second reaction gas has a high probability of reacting with the first reaction gas only, and the probability of reacting with other substances in the reaction chamber is reduced, unnecessary physical and chemical reactions are avoided, and the deposition effect is ensured. Moreover, compared with the traditional electronic control scheme, the utility model controls through the structural features, has better reliability, and has lower control difficulty.

[0033] In some embodiments, the through main body 110 has a first end face 111 and a second end face 113, the first end face 111 is located in the reaction chamber, and the second end face 113 is used for being jointed with the external pipeline, the first end face 111 is provided with a first gas outlet hole 133 and a second gas outlet hole 153, the first gas outlet hole 133 is correspondingly communicated to the first pipeline 130, and the second gas outlet hole 153 is correspondingly communicated to the second pipeline 150, the second end face 113 is provided with a first gas inlet hole 131 and a second gas inlet hole 151, the first gas inlet hole 131 is correspondingly communicated to the first pipeline 130 and is correspondingly jointed to the first reaction gas pipeline, and the second gas inlet hole 151 is correspondingly communicated to the second pipeline 150 and is correspondingly jointed to the second reaction gas pipeline.

[0034] In some embodiments, the conducting body 110 is L-shaped, the first pipeline 130 is straightly bent, and the second pipeline 150 is curvedly bent. Specifically, the first pipeline 130 is arranged along the body extension direction of the conducting body 110, and the second pipeline 150 is different from the body extension direction of the conducting body 110 and is designed in a curvedly bent manner, so that the path length of the second pipeline 150 is much greater than that of the first pipeline 130, further ensuring the hysteresis of the second reaction gas.

[0035] In some embodiments, the first pipeline 130 includes a first straight segment 135 and a second straight segment 137 that are mutually connected, one end of the first straight segment 135 is connected to the first gas inlet hole 131, the other end is connected to the second straight segment 137, one end of the second straight segment 137 away from the first straight segment 135 is connected to the first gas outlet hole 133, and the first straight segment 135 and the second straight segment 137 are perpendicular to each other. Specifically, the connection between the first straight segment 135 and the second straight segment 137 is arc-shaped, which can avoid the formation of turbulence at the bending part and affect the gas flow speed. At the same time, the use of straight segments can as far as possible avoid the influence of the pipeline on the flow speed of the first reaction gas, ensuring that the first reaction gas can flow into the reaction chamber as soon as possible.

[0036] Further, the second pipeline 150 includes a first curved segment 155, a second curved segment 157, and a third curved segment 159, one end of the first curved segment 155 is connected to the second gas inlet hole 151, the other end is connected to the second curved segment 157, one end of the second curved segment 157 away from the first curved segment 155 is connected to the third curved segment 159, and one end of the third curved segment 159 away from the second curved segment 157 is connected to the second gas outlet hole 153. Specifically, the first curved segment 155 has a plurality of first elbows, the second curved segment 157 has a plurality of second elbows, and the third curved segment 159 has a plurality of third elbows, and the first elbows, the second elbows, and the third elbows have the same curvature. By using a plurality of first elbows, second elbows, and third elbows, the path length can be ensured to be long enough to lag the inflow of the second reaction gas. Moreover, the use of elbow structure can ensure smaller gas flow resistance and avoid affecting the flow speed of the gas flow.

[0037] In some embodiments, the first gas inlet hole 131 and the second gas inlet hole 151 have the same diameter and are arranged at intervals along the thickness direction of the conducting body 110; the first gas outlet hole 133 and the second gas outlet hole 153 have the same diameter and are arranged at intervals along the thickness direction of the conducting body 110. Specifically, the diameters of the gas inlet holes and the gas outlet holes are the same, so that the flow speeds of the first reaction gas and the second reaction gas are more controllable.

[0038] In some embodiments, the surface of the lead-through body 110 adjacent to the first end face 111 is also provided with a first mounting fixing hole, which is close to the first end face 111 and corresponds to the engagement of the first fixing member provided on the side wall of the reaction chamber. The surface of the lead-through body 110 adjacent to the second end face 113 is also provided with a second mounting fixing hole, which is close to the second end face 113 and corresponds to the engagement of the second fixing member provided on the side wall of the reaction chamber. Specifically, the first mounting hole 170 is two, and the two first mounting holes 170 are provided close to the first end face 111. The second mounting hole 190 is two, and the two second mounting holes 190 are provided close to the second end face 113. By providing the first mounting hole 170 and the second mounting hole 190, the mounting and fixing effect of the lead-through body 110 can be ensured. Moreover, the first mounting hole 170 is spaced apart from the first pipeline 130 and the second pipeline 150, and the second mounting hole 190 is spaced apart from the first pipeline 130 and the second pipeline 150, which can avoid interference with the first pipeline 130 and the second pipeline 150.

[0039] Further, the second end face 113 is provided with a first flow rate meter 115 for detecting the outflow rate of the first outflow hole 133, and the second end face 113 is provided with a second flow rate meter 117 for detecting the outflow rate of the second outflow hole 151. The first pipeline 130 is also provided with a flow rate adjusting meter 119 for adjusting the flow rate of the first reaction gas in the first pipeline 130, so that the outflow rate of the first reaction gas and the outflow rate of the second reaction gas are the same, so that the deposition reaction is more uniform.

[0040] The utility model embodiment further provides a kind of deposition equipment, including reaction chamber and deposition pipeline structure 100, deposition pipeline structure 100, including lead-through body 110, lead-through body 110 is used to be arranged on the side wall of reaction chamber, and lead-through body 110 is provided with mutually isolated first pipeline 130 and second pipeline 150, first pipeline 130 and second pipeline 150 all penetrate lead-through body 110, and are connected to reaction chamber, the path length of first pipeline 130 is less than the path length of second pipeline 150, wherein, first pipeline 130 is used to transport first reaction gas, and second pipeline 150 is used to transport second reaction gas. Wherein, lead-through body 110 is arranged on the side wall of reaction chamber.

[0041] In some embodiments, the first end face 111 of the lead-through body 110 is located in the reaction chamber, and the second end face 113 is located outside the reaction chamber, so as to be connected with the pipeline outside.

[0042] In summary, by the technical scheme, the utility model discloses embodiment sets up the first pipe line 130 and the second pipe line 150 that mutually isolate in the conduction main body 110, wherein the first pipe line 130 and the second pipe line 150 all through the conduction main body 110, and communicate to the reaction chamber, and the path length of first pipe line 130 is less than the path length of second pipe line 150, and first pipe line 130 is used for the first reaction gas of comfort density less, and second pipe line 150 is used for conveying the second reaction gas of density bigger, thereby can make the mass flow rate of the reaction gas of different density that input reaction chamber tend to be consistent.Compared with prior art, the utility model transports the reaction gas of different density by the first pipe line 130 and the second pipe line 150 of different path length, because the gas density is different, therefore will influence its gas mass flow rate, and the utility model will low density first reaction gas be transported by first pipe line 130, will high density second reaction gas be transported by second pipe line 150, thereby the mass flow rate of the reaction gas in first pipe line 130 and second pipe line 150 is controlled to tend to be consistent, thereby promote the mass flow rate of the reaction gas in the reaction cavity tend to be consistent, make the deposition reaction more uniform.

[0043] It should be noted that the features in the embodiments of the present application can be combined with each other without conflict.

[0044] The above only describes the preferred embodiments of the present application and is not intended to limit the present application. Those skilled in the art can make various modifications and changes to the present application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application shall be included in the protection scope of the present application.

Claims

1. A deposition line structure, characterized by, The utility model provides a kind of reaction chamber, including the lead-through main body, the lead-through main body is used to be arranged on the lateral wall of reaction chamber, and first pipeline and second pipeline are arranged in the lead-through main body, the first pipeline and the second pipeline are all through the lead-through main body, and are communicated to the reaction chamber, the path length of the first pipeline is less than the path length of the second pipeline, wherein the first pipeline is used to transport first reaction gas, and the second pipeline is used to transport second reaction gas.

2. The deposition line structure according to claim 1, characterized in that The lead-through main body has first end face and second end face, the first end face is located in the reaction chamber, and the second end face is used to be engaged with external pipeline, the first end face is provided with first gas outlet and second gas outlet, the first gas outlet is communicated with the first pipeline, and the second gas outlet is communicated with the second pipeline, the second end face is provided with first gas inlet and second gas inlet, the first gas inlet is communicated with the first pipeline and is engaged with first reaction gas pipeline, and the second gas inlet is communicated with the second pipeline and is engaged with second reaction gas pipeline.

3. The deposition line structure according to claim 2, characterized in that The lead-through main body is L-shaped, the first pipeline is linearly bent, and the second pipeline is curvedly bent.

4. The deposition line structure according to claim 3, characterized in that The first pipeline includes first linear segment and second linear segment, one end of the first linear segment is connected to the first gas inlet, the other end is connected to the second linear segment, one end of the second linear segment away from the first linear segment is connected to the first gas outlet, and the first linear segment and the second linear segment are perpendicular to each other.

5. The deposition line structure according to claim 4, characterized in that The second pipeline includes first curved segment, second curved segment and third curved segment, one end of the first curved segment is connected to the second gas inlet, the other end is connected to the second curved segment, one end of the second curved segment away from the first curved segment is connected to the third curved segment, and one end of the third curved segment away from the second curved segment is connected to the second gas outlet.

6. The deposition line structure according to claim 5, characterized in that The first curved segment has a plurality of first elbows, the second curved segment has a plurality of second elbows, the third curved segment has a plurality of third elbows, and the first elbows, the second elbows and the third elbows have the same curvature.

7. The deposition line structure according to claim 2, characterized in that The first gas inlet and the second gas inlet have the same diameter and are spaced apart along the thickness direction of the lead-through main body. The first gas outlet and the second gas outlet have the same diameter and are spaced apart along the thickness direction of the lead-through main body.

8. The deposition line structure according to claim 2, characterized in that The surface adjacent to the first end face of the lead-through main body is also provided with a first mounting hole, the first mounting hole is close to the first end face and is engaged with the first fixing member arranged on the lateral wall of the reaction chamber. The surface adjacent to the second end face of the lead-through main body is also provided with a second mounting hole, the second mounting hole is close to the second end face and is engaged with the second fixing member arranged on the lateral wall of the reaction chamber.

9. The deposition line structure according to claim 2, characterized in that The first end face is provided with a first flow rate meter for detecting the flow rate of the first reaction gas flowing out of the first gas outlet hole, and the second end face is provided with a second flow rate meter for detecting the flow rate of the second reaction gas flowing out of the second gas outlet hole.

10. A deposition apparatus, characterized by, The deposition pipeline structure comprises a reaction chamber and a deposition pipeline structure as claimed in any one of claims 1-9, and the conducting body is arranged on the sidewall of the reaction chamber.

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