Ion beam process chamber and ion etching equipment

Abstract

The utility model discloses an ion beam process chamber and ion etching equipment, the scheme comprises an ion chamber, a reaction chamber, a wafer stage and a binding plate, the ion chamber is provided with an ion source, the joint of the ion chamber and the reaction chamber is a jet orifice, and the ion source forms an ion beam in the reaction chamber through the jet orifice; the wafer stage is arranged in the reaction chamber; and the binding plate is arranged at the jet orifice so as to adjust the bombardment angle of the ion beam. According to the ion beam process chamber, the binding plate is arranged at the jet orifice, and the bombardment area of the ion beam can be adjusted by adjusting the bombardment angle of the ion beam through the binding plate, so that the probability of bombardment of the reaction chamber is reduced; in addition, the binding plate is made of a non-metal material, so that metal cannot be dissociated, and metal and particle pollution caused in the technological process is reduced.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of semiconductor processing, especially to an ion beam process chamber and an ion etching equipment. BACKGROUND

[0002] In the ion etching equipment, in the process, the ion beam process chamber is bombarded by the ion beam, which introduces trace element pollution such as Al, Fe and Cr, and non-gaseous solid particle pollution based on metal elements, thereby affecting the stability of wafer process.

[0003] Therefore, how to improve the stability of wafer process has become a technical problem to be solved by the technical personnel in the field. UTILITY MODEL CONTENT

[0004] The utility model provides an ion beam process chamber and an ion etching equipment to improve the stability of wafer process.

[0005] In order to achieve the above-mentioned purpose, the utility model provides the following technical scheme:

[0006] Firstly, the utility model provides an ion beam process chamber, which comprises an ion chamber, a reaction chamber, a wafer carrier and a restraint plate.

[0007] In some embodiments, the restraint plate is made of non-metallic material.

[0008] In some embodiments, the injection port is a circular hole, and the restraint plate is in the form of a ring.

[0009] In some embodiments, the restraint plate is in the form of a circular ring, a rectangular ring or an elliptical ring.

[0010] In some embodiments, the restraint plate is detachably connected to the injection port.

[0011] In some embodiments, the restraint plate is detachably arranged at the injection port by means of a fastener.

[0012] In some embodiments, the fastener is made of non-metallic material.

[0013] In some embodiments, the restraint plate is slidably arranged at the injection port.

[0014] In some embodiments, the ion beam process chamber further comprises a driving member, a transmission member and a slide rail, the slide rail extends along the width direction of the injection port, the restraint plate is slidably arranged on the slide rail, and the driving member drives the restraint plate to slide on the slide rail through the transmission member.

[0015] In some embodiments, the transmission member and the slide rail are made of non-metallic material.

[0016] In some embodiments, the restraint plate comprises a base plate having an opening and at least two sliding blades slidably arranged at the opening of the base plate to adjust the size of the opening.

[0017] In some embodiments, the restraint plate further comprises a flexible rope sequentially passing through the at least two sliding blades to pull the sliding blades to adjust the size of the opening.

[0018] In some embodiments, the reaction chamber is provided with an inner lining made of non-metallic material or sprayed with non-metallic material in the ion beam bombardment area.

[0019] In some embodiments, the wafer carrier is provided with an outer lining made of non-metallic material or sprayed with non-metallic material on the outer periphery.

[0020] In some embodiments, the wafer carrier is provided with an outer lining made of non-metallic material or sprayed with non-metallic material on the outer periphery.

[0021] In some embodiments, the electrostatic chucking disc of the wafer carrier is provided with a chucking sleeve made of non-metallic material or sprayed with non-metallic material on the periphery.

[0022] In some embodiments, the chucking sleeve is in a tubular structure and is sleeved on the outer periphery of the electrostatic chucking disc, or the chucking sleeve is wound by a flexible material made of non-metallic material.

[0023] In some embodiments, the chucking sleeve further comprises a rim extending outward from the chucking sleeve, and the rim is made of non-metallic material or sprayed with non-metallic material.

[0024] In some embodiments, the non-metallic material is graphite, quartz, SiC or PTFE.

[0025] In a second aspect, the present application provides an ion beam etching device comprising the ion beam process chamber according to any one of the above.

[0026] As can be seen from the above technical solutions, the ion beam process chamber of the present application is provided with a restraint plate at the injection port, and the bombardment area of the ion beam can be adjusted by adjusting the bombardment angle of the ion beam through the restraint plate, thereby reducing the probability of bombardment of the reaction chamber.

[0027] In addition, the restraint plate is made of non-metallic material, so it will not ionize metal and reduce the metal and particle pollution caused by the process. BRIEF DESCRIPTION OF DRAWINGS

[0028] In order to more clearly illustrate the technical solutions of the embodiments of the present application or the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced. Obviously, the drawings in the following description are only some examples or embodiments of the present application, and for those skilled in the art, other drawings can be obtained without creative labor on the basis of the provided drawings, and the present application can also be applied to other similar scenarios on the basis of the provided drawings. Unless it is obvious from the language environment or otherwise stated, the same reference numbers in the drawings represent the same structure or operation.

[0029] Figure 1 A schematic view of an ion beam process chamber provided by an embodiment of the present application;

[0030] Figure 2 A schematic view of another ion beam process chamber provided by an embodiment of the present application;

[0031] Figure 3 A schematic view of a spray port cooperating with a restraint plate provided by an embodiment of the present application;

[0032] Figure 4 A schematic view of another spray port cooperating with a restraint plate provided by an embodiment of the present application;

[0033] Figure 5 A schematic view of a third spray port cooperating with a restraint plate provided by an embodiment of the present application;

[0034] Figure 6 A schematic view of a fourth spray port cooperating with a restraint plate provided by an embodiment of the present application;

[0035] Figure 7 A schematic view of a third ion beam process chamber provided by an embodiment of the present application;

[0036] Figure 8 A schematic view of an outer liner provided by an embodiment of the present application; Figure 9 And Figure 10 A schematic view of a fourth ion beam process chamber provided by an embodiment of the present application;

[0037] Figure 11 A schematic view of an adsorption sleeve provided by an embodiment of the present application;

[0038] Figure 12 A schematic view of another adsorption sleeve provided by an embodiment of the present application;

[0039] In the diagram, 1-ion chamber; 2-reaction chamber; 3-wafer stage; 4-bonding plate; 5-inner liner; 6-outer liner; 7-suction sleeve; 8-edges; 11-injection port; 41-substrate; 42-opening; 43-blade; 44-flexible rope. DETAILED DESCRIPTION

[0040] The utility model will be further explained in detail below in combination with the drawings and embodiments. It can be understood that the specific embodiments described herein are only used to explain the related utility model, and are not limited to the utility model. The described embodiments are only part of the embodiments of the utility model, not all embodiments. Based on the embodiments in the utility model, all other embodiments obtained by those skilled in the art without creative labor belong to the scope of protection of the utility model.

[0041] Integrated circuits as the foundation and core of the information industry, among them, the central control unit (CPU) composed of semiconductor chips in the integrated circuit structure is widely used in medical, automotive, mobile phones and other daily use products, and plays an increasingly important role in people's social life. With the reduction of CPU feature size in the process of manufacturing super large scale integrated circuits, the reduction of focal depth in lithography equipment and the trend of 3D stacking of chip structure, the micro correction and planarization process of wafer chip topography forming CPU are more stringent requirements and challenges. At present, for devices with minimum feature size of 0.35 microns or less, chemical mechanical polishing (Chemical Mechanical Polish, abbreviated as CMP) is the mainstream technology to realize silicon wafer planarization. However, with the development of advanced technology nodes (more than 22nm) and the emergence of new integrated processes, such as replacement of metal gate (RMG), self-aligned contact (SAC) and polysilicon opening CMP, more challenges are put forward to the uniformity of chip structure thickness and morphology (up to nanometers or even angstroms). Defects of the substrate caused by improper process control of CMP contact processing, and particle contamination induced by polishing slurry, etc. will limit its application and reduce the yield. In addition, the CMP technology cannot realize high-precision planarization control at the nanometer or angstrom level, making it difficult to perform precise processing of the height uniformity of the replacement metal gate (RMG) of the 3D transistor structure (FinFET) node. These inherent shortcomings of CMP process limit its application in the advanced manufacturing process with continuously shrinking chip size.

[0042] Ion Beam Etching (IBE) and Flexible Shaping Etch (FSE) are the latest developments of dry etching technology for Ion Beam Shaping (IBS) of chip structures, such as micro-machining and planarization, which provide new opportunities for precise control of chip thickness at the nanometer level. The IBS uses an ion source to provide neutral gas ions with a certain energy to bombard the wafer surface, and removes or selectively removes the surface material by physical sputtering. Through optimization of the particle beam (energy, beam current density, etc.) during the process, the IBS process can effectively control the motion of the collision particles, achieving ultra-precision machining of atomic-level planes. By controlling the particle beam drawn by the ion source during the IBE / FSE process to adjust the incident angle of the bombarding ions, the IBS surface micro-machining has the unique advantage of directional etching, thereby achieving different etching rates at different incident ion bombardment angles on the surface of a specific material. These characteristics enable IBS based on IBE / FSE technology to be used to modify the surface roughness of chip patterns and truly achieve nanoscale cross-wafer uniformity and planarity control (3σ<15A within a 300mm wafer), meeting the stringent wafer uniformity requirements of FinFET and even Gate All Around (GAA) technology transistors. In addition, by adjusting the particle beam energy and bombardment angle, IBS can modify the shape and arrangement of the chip pattern produced by EUV patterning in the EUV lithography patterning process, replacing multiple EUV patterning processes, reducing the number of double or multiple EUV exposures, simplifying the processing flow of small-size high-precision chips, improving production efficiency, and reducing costs. Therefore, for advanced logic chip process nodes, memory chip 3D trends, and other advanced manufacturing, IBE and FSE technology is gaining increasing importance.

[0043] In order to obtain good etching uniformity, the ion beam process chamber of the IBE, IBS ion etching equipment currently available, such as the one shown in Figure 1 has an ion beam with a bombardment angle of about 10° generated by the ion chamber 1, which causes the bombardment area of the ion beam to include the wafer surface, the wafer stage 3 that holds the wafer, and the inner wall of the reaction chamber 2. When the wafer stage 3 and the inner wall of the reaction chamber 2 contain aluminum alloy or stainless steel components, the surface of the wafer stage 3 will introduce trace element contamination (>Spec: 1E10 at. / c㎡) such as Al, Fe, and Cr, as well as non-gaseous solid particle contamination based on metal elements during the ion beam bombardment process. The generation of these contaminants affects the stability of the wafer process and greatly limits the application of IBS and IBE ion etching equipment and processes in high-end chip manufacturing.

[0044] To solve the above technical problems, the present application mainly from reducing the ion beam bombardment area, the utility model discloses a kind of ion beam process chambers.

[0045] Referring to Figure 2 The ion beam process chamber disclosed in the present application includes an ion chamber 1, a reaction chamber 2, a wafer carrier 3, and a restraint plate 4. The ion chamber 1 has an ion source, and the interface between the ion chamber 1 and the reaction chamber 2 is a spray port 11. The ion source forms an ion beam in the reaction chamber 2 through the spray port 11. The wafer carrier 3 is arranged in the reaction chamber 2. The restraint plate 4 is arranged at the spray port 11 to adjust the bombardment angle of the ion beam.

[0046] The ion beam process chamber of the present application is provided with a restraint plate 4 at the spray port 11. By adjusting the bombardment angle of the ion beam through the restraint plate 4, the bombardment area of the ion beam can be adjusted, thereby reducing the probability of bombarding the reaction chamber 2.

[0047] The restraint plate 4 is made of non-metallic material, so it will not release metal and reduce metal and particle pollution during the process.

[0048] The restraint plate 4 is arranged at the spray port 11. By adjusting the size of the restraint plate 4 extending out of the spray port 11, the opening size of the spray port 11 can be adjusted, which is equivalent to adjusting the bombardment angle of the ion beam.

[0049] In addition, since the restraint plate 4 is made of non-metallic material, the area bombarded by the ion beam will not be contaminated by trace elements and non-gaseous solid particles based on metal elements.

[0050] Further, the restraint plate 4 is made of non-metallic material such as graphite, quartz, SiC, PTFE, etc.

[0051] The above materials can react with the reaction gas to form gas and be discharged in the IBE and IBS process etching environment:

[0052] For example: graphite: C + O2→ CO2(g)↑

[0053] Quartz: SiO2+ 2CF4→ SiF4(g)↑ + 2CO2(g)↑

[0054] SiO2+ NF3+ O2→ NO2+ SiF4(g)↑

[0055] SiC: SiC + 2O2→ SiO2(s) + CO2↑

[0056] Preferably, the restraining plate 4 is made of graphite material, which has low sputtering yield. Graphite has high thermal conductivity, high chemical stability, and corrosion resistance. After purification treatment, the ash content of graphite can be controlled below 5ppm. The high-purity graphite liner made by chemical cleaning can effectively eliminate the metal element pollution caused by ion beam bombardment and reduce particle generation, so it can be used as the preferred material.

[0057] Referring to Figures 3-4 , the injection port 11 is a circular hole, and the restraining plate is a ring structure. The restraining plate can be a circular ring structure, a rectangular ring structure, or an elliptical ring structure. Figure 3 In some embodiments, the restraining plate 4 is a circular ring structure. Figure 4 In some embodiments, the restraining plate 4 is a rectangular ring structure.

[0058] The length of the restraining plate 4 extending out of the injection port 11 can be adjusted. For example, the restraining plate 4 can be detachably connected or slidably connected to the injection port 11. The restraining plate 4 can be attached to the injection port 11 by its own gravity without the help of other components.

[0059] When the restraining plate 4 is detachably connected to the injection port 11, the restraining plate 4 can be detachably arranged on the injection port 11 by a fastener. When the restraining plate 4 needs to be arranged, the restraining plate 4 is mounted on the injection port 11 by the fastener.

[0060] The fastener can be a metal or non-metal component. In particular, when it is a non-metal component, it can reduce the release of metal and reduce the metal and particle pollution caused by the process.

[0061] In some examples, the restraining plate 4 can be slidably arranged on the injection port 11. The ion beam process chamber further comprises a driving component, a transmission component, and a sliding rail. The sliding rail extends along the width direction of the injection port 11. The restraining plate 4 is slidably arranged on the sliding rail. The driving component drives the restraining plate 4 to slide on the sliding rail through the transmission component.

[0062] In some embodiments, the transmission component and the sliding rail are made of non-metal material, which can reduce the release of metal and reduce the metal and particle pollution caused by the process.

[0063] Referring to Figure 5 and Figure 6 , the restraining plate 4 disclosed in some examples of the present application comprises a base plate 41 having an opening 42 and at least two sliding blades 43. The sliding blades 43 are slidably arranged on the opening 42 of the base plate 41 to adjust the size of the opening 42. By stretching the sliding blades 43, the length of the sliding blades 43 extending into the opening 42 can be adjusted, thereby adjusting the size of the opening 42 and further adjusting the bombardment area of the ion beam.

[0064] The number of sliding blades 43 in the illustration is four. In some examples, the number of sliding blades 43 can also be two, three, five, etc.

[0065] In addition, in order to facilitate adjustment, the restraint plate 4 further comprises a flexible rope 44, which is sequentially threaded through the at least two sliding blades 43 to pull the sliding blades 43 and adjust the size of the opening 42. The size of the opening 42 can be adjusted by pulling the flexible rope 44 to pull out the adjustment blade.

[0066] It should be noted that the substrate 41, the sliding blade 43 and the flexible rope 44 are all non-metal materials.

[0067] The present application can also reduce the use of metal materials in the bombardment area and reduce the occurrence of pollution. In some examples, the reaction chamber 2 is provided with a non-metal material lining 5 or a non-metal material lining 5 sprayed in the bombardment area of the ion beam.

[0068] As described above, the lining 5 of non-metal material or the coating of non-metal material can chemically react with the reaction gas in the IBE and IBS etching environment to form a gas and be discharged without causing pollution.

[0069] Referring to Figure 7 and Figure 8 In the above examples, the lining 5 is mainly arranged in the area of the inner wall of the reaction chamber 2 that can be bombarded, that is, the lining 5 is arranged in the key area, which can effectively reduce the occurrence of pollution and reduce the improvement cost. In some examples of the present application, the entire interior of the reaction chamber 2 is provided with a lining 5.

[0070] As described above, the shell wall of the wafer carrier 3 is of metal material. Therefore, in some examples of the present application, a non-metal material outer lining 6 or a non-metal material outer lining 6 sprayed is arranged on the outer periphery of the wafer carrier 3. Similarly, the non-metal material outer lining 6 or the non-metal material outer lining 6 coated can further reduce the occurrence of pollution.

[0071] It should be noted that the outer lining 6 is a barrel structure, which is sleeved on the outer periphery of the wafer carrier 3; or the outer lining 6 is wound by a flexible material of non-metal material.

[0072] Referring to Figures 9-12 In order to further optimize the above scheme, the electrostatic chucking disc periphery of the wafer carrier 3 is further provided with a chucking sleeve 7, which is of non-metal material or is sprayed with non-metal material. The chucking sleeve 7 can reduce the pollution in this area.

[0073] It should be noted that the chucking sleeve 7 is a tubular structure, which is sleeved on the outer periphery of the electrostatic chucking disc; or the chucking sleeve is wound by a flexible material of non-metal material.

[0074] In addition, the adsorption sleeve 7 further comprises a rim 8 extending outwardly from the adsorption sleeve 7, the rim 8 being non-metallic or being coated with a non-metallic material. The ion beam is blocked from hitting the inner liner 5 by the rim 8.

[0075] The present application provides an ion etching apparatus comprising the ion beam process chamber according to any one of the above. Since the ion beam process chamber has the above beneficial effects, the ion etching apparatus comprising the ion beam process chamber has corresponding effects, which are not described here again.

[0076] The terms "first", "second", etc. are used only for the purpose of description, and should not be understood as indicating or implying relative importance or implying the number of the technical features indicated. Therefore, the features defined as "first", "second" can explicitly or implicitly include one or more of the features.

[0077] The above description is merely preferred embodiments of the present application and a principle of applied technologies, and is not intended to limit the present application. The present application can be variously changed and modified by those skilled in the art. The scope of the present application is not limited to the technical solutions formed by the specific combinations of the above technical features, and should also cover other technical solutions formed by any combinations of the above technical features or equivalent features without departing from the concept of the present application. For example, the technical solutions formed by the mutual replacement of the above features and the technical features disclosed in the present application (but not limited to) having similar functions.

Claims

1. An ion beam process chamber, characterized by, The ion beam process chamber comprises an ion chamber, a reaction chamber, a wafer carrier and a binding plate, wherein the ion chamber has an ion source, and the ion source forms an ion beam in the reaction chamber through a spray port; the wafer carrier is arranged in the reaction chamber; and the binding plate is arranged at the spray port to adjust the bombardment angle of the ion beam.

2. The ion beam process chamber of claim 1, wherein, The binding plate is made of non-metallic material.

3. The ion beam process chamber of claim 1, wherein, The spray port is a circular hole, and the binding plate is in a ring structure.

4. The ion beam process chamber of claim 3, wherein, The binding plate is in any one of a circular ring structure, a rectangular ring structure and an elliptical ring structure.

5. The ion beam process chamber of claim 1, wherein, The binding plate is detachably connected with the spray port.

6. The ion beam process chamber of claim 5, wherein, The binding plate is detachably arranged at the spray port through a fastener.

7. The ion beam process chamber of claim 6, wherein, The fastener is made of non-metallic material.

8. The ion beam process chamber of claim 1, wherein, The binding plate is slidably arranged at the spray port.

9. The ion beam process chamber of claim 8, wherein, The ion beam process chamber further comprises a driving member, a transmission member and a slide rail, the slide rail extends along the width direction of the spray port, the binding plate is slidably arranged on the slide rail, and the driving member drives the binding plate to slide on the slide rail through the transmission member.

10. The ion beam process chamber of claim 9, wherein, The transmission member and the slide rail are made of non-metallic material.

11. The ion beam process chamber of claim 1, wherein, The binding plate comprises a base plate with an opening and at least two sliding blades, the sliding blades are slidably arranged at the opening of the base plate to adjust the size of the opening.

12. The ion beam process chamber of claim 11, wherein, The binding plate further comprises a flexible rope, the flexible rope sequentially passes through the at least two sliding blades to pull the sliding blades and adjust the size of the opening.

13. The ion beam process chamber of claim 1, wherein, The reaction chamber is provided with an inner liner made of non-metallic material or sprayed with non-metallic material in the bombardment area of the ion beam.

14. The ion beam process chamber of claim 1, wherein, The wafer carrier is provided with an outer liner made of non-metallic material or sprayed with non-metallic material at the periphery.

15. The ion beam process chamber of claim 14, wherein, The outer liner is in a barrel structure and is sleeved at the periphery of the wafer carrier, or the outer liner is wound by a flexible material made of non-metallic material.

16. The ion beam process chamber of claim 1, wherein, The periphery of an electrostatic chuck of the wafer carrier is provided with a chucking sleeve, the chucking sleeve is made of non-metallic material or sprayed with non-metallic material.

17. The ion beam process chamber of claim 16, wherein, The chucking sleeve is in a tubular structure and is sleeved at the periphery of the electrostatic chuck, or the chucking sleeve is wound by a flexible material made of non-metallic material.

18. The ion beam process chamber of claim 17, wherein, The chucking sleeve further comprises a rim, the rim extends outward from the chucking sleeve, and the rim is made of non-metallic material or sprayed with non-metallic material.

19. The ion beam process chamber of any of claims 2, 7, 10, 13-18, wherein, The non-metallic material is graphite, quartz, SiC or PTFE.

20. An ion etching apparatus, characterized by, The ion beam process chamber comprises any one of claims 1 to 19.

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