Electrostatic chuck and plasma etching equipment

Abstract

The utility model relates to an electrostatic chuck and plasma etching equipment, and the electrostatic chuck comprises a chuck seat and a chuck plate. The suction cup plate and the suction cup base are detachably fixed, the suction cup base is provided with a cooling flow channel, and an adsorption face is arranged on the side, away from the suction cup base, of the suction cup plate. When the suction cup plate and the suction cup base are in a fixed state, a heat conduction cavity is defined by the suction cup plate and the suction cup base, and the heat conduction cavity is filled with heat conduction materials. The electrostatic chuck is arranged to be of a split structure, the replacement operation of the electrostatic chuck can be simplified, the replacement efficiency is improved, and the cost is reduced.

Description

Technical Field

[0001] This application relates to the field of plasma etching equipment technology, specifically to an electrostatic chuck and plasma etching equipment. Background Technology

[0002] Plasma etching machines, also known as plasma planar etching machines, plasma etching equipment, plasma surface treatment instruments, and plasma cleaning systems, are used in the semiconductor industry. Inductively coupled plasma etching is the result of the combined action of chemical and physical processes.

[0003] In semiconductor equipment, the lower electrode is the stage on which the wafer is placed for processing. During the process, the edge of the electrostatic chuck is not completely shielded and is easily etched by plasma until it becomes unusable. Electrostatic chucks are relatively expensive and have a high cost.

[0004] Furthermore, since different manufacturers use different wafer sizes, or even a single manufacturer frequently needs to switch wafer sizes, the electrostatic chuck needs to be disassembled, whether due to etching rendering it unusable or the manufacturer needing to switch wafer sizes. This often requires removing multiple screws to replace the electrostatic chuck and its base protective ring and other peripheral parts, which is time-consuming, labor-intensive, and inefficient.

[0005] Therefore, how to simplify the replacement operation of electrostatic chucks, improve replacement efficiency, and reduce costs is a technical problem that urgently needs to be solved by those skilled in the art. Utility Model Content

[0006] The purpose of this application is to provide an electrostatic chuck and plasma etching equipment that can simplify the replacement operation of the electrostatic chuck, improve the replacement efficiency and reduce costs.

[0007] To solve the above-mentioned technical problems, this application provides an electrostatic chuck, including a chuck base and a chuck plate; the chuck plate is detachably fixed to the chuck base, the chuck base is provided with a cooling channel, and the chuck plate is provided with an adsorption surface on the side away from the chuck base; when the chuck plate and the chuck base are fixed, a heat-conducting cavity is formed between the chuck plate and the chuck base, and the heat-conducting cavity is filled with a heat-conducting material.

[0008] The suction cup plate and suction cup base are designed as separate structures. In use, the part of the suction surface that is not covered is easily damaged. In this case, you only need to remove and replace the suction cup plate, without replacing the suction cup base.

[0009] And the chuck plate and the chuck seat are detachably connected, the chuck plate can be provided in multiple different specifications, and the fixing structure for fixing the chuck plate to the chuck seat is the same, when different specifications of wafers are used, the area of the adsorption surface required is different, at this time, only the corresponding chuck plate needs to be replaced, without disassembling the chuck seat, that is, the chuck seat does not need to be replaced, only the corresponding chuck plate needs to be replaced.

[0010] Specifically, the structure of the side surface of the chuck plate facing the chuck seat can be set according to the specific situation, the area of the adsorption surface of the chuck plate of different specifications is different, but the fixing structure for fixing the chuck plate to the chuck seat is the same, and the appropriate chuck plate can be selected according to the actual adsorption surface requirement, without replacing the chuck seat, the chuck seat has high universality, good economy and good flexibility.

[0011] The chuck plate and the chuck seat are provided in a split structure, since the chuck plate only needs to be fixed to the chuck seat, and the chuck seat can be fixed to the electrode seat in the plasma etching machine, only the cooling flow channel is provided in the chuck seat, the cooling flow channel is in communication with the cooling system, when the chuck plate is replaced, since the chuck seat does not need to be replaced, the cooling system in communication with the cooling flow channel does not need to be disassembled, the chuck plate and the chuck seat are convenient to disassemble and assemble, time and labor are saved, and the disassembly and assembly efficiency can be effectively improved.

[0012] The chuck seat can be used with multiple chuck plates, has high utilization rate and good flexibility, and can effectively reduce the cost.

[0013] The chuck plate and the chuck seat can form a heat conduction cavity therebetween in a fixed state, the heat conduction cavity is filled with a heat conduction medium, and the heat conduction medium can improve the heat conduction performance, thereby improving the cooling effect of the cooling flow channel on the wafer placed on the adsorption surface.

[0014] Optionally, the heat conduction medium is a flexible heat conduction pad.

[0015] Optionally, a first sealing ring is further arranged between the chuck seat and the chuck plate along the circumference of the heat conduction cavity.

[0016] Optionally, the chuck seat comprises a first seat body and a second seat body, the first seat body is arranged between the second seat body and the chuck plate, and a cooling groove is further arranged on a side surface of the first seat body facing the second seat body or a side surface of the second seat body facing the first seat body, and the first seat body and the second seat body are fixedly attached and form the cooling flow channel.

[0017] Optionally, the first seat body and the second seat body are fixedly attached by circumferential welding or by fasteners.

[0018] Optionally, the chuck base is provided with a plurality of first fixing holes spaced apart in the circumferential direction, and the chuck plate is provided with a plurality of second fixing holes spaced apart in the circumferential direction, and the chuck plate and the chuck base are fixed by fasteners passing through the second fixing holes and the first fixing holes.

[0019] Optionally, the side surface of the chuck plate away from the chuck base is further provided with a counterbore coaxially communicated with the second fixing hole, the first fixing hole is a threaded hole, a mounting bolt passes through the second fixing hole and is fixed in threaded cooperation with the threaded hole, and the head of the mounting bolt is located in the counterbore.

[0020] Optionally, the chuck base is a metal base, the chuck plate comprises a chuck and an annular plate fixed to the outer periphery of the chuck, the chuck is provided with the adsorbing surface, the annular plate is a metal plate and is fixed with the chuck base, and the chuck is a ceramic chuck.

[0021] Optionally, the chuck plate comprises a chuck and an annular plate fixed to the outer periphery of the chuck, and the chuck is provided with the adsorbing surface; the electrostatic chuck further comprises a cladding ring, the cladding ring is cladded to the circumferential side wall of the chuck base and the chuck plate, and the top end of the cladding ring is provided with an extension portion inward in the radial direction, and the extension portion covers at least part of the annular plate.

[0022] Optionally, a focusing ring is further provided, the focusing ring is provided at the outer periphery of the chuck, and the extension portion is provided with a stepped structure for supporting the focusing ring.

[0023] Optionally, the chuck base is further provided with a plurality of first hole portions, the chuck plate is further provided with a plurality of second hole portions, the number of the first hole portions and the second hole portions is the same and the positions of the first hole portions and the second hole portions correspond, and in the fixed state of the chuck plate and the chuck base, each of the first hole portions and each of the second hole portions correspond to each other in communication; the plurality of first hole portions comprises at least one of a cooling gas hole, a conductive hole and a thimble hole.

[0024] Optionally, a second sealing ring is further arranged between the chuck plate and the chuck base, and the second sealing ring is arranged around the circumferential direction of the first hole portion and the second hole portion.

[0025] Optionally, the side surface of the chuck base facing the chuck plate or the side surface of the chuck plate facing the chuck base is further provided with a second sealing groove arranged around the circumferential direction of the first hole portion, and the second sealing groove is provided with the second sealing ring.

[0026] Optionally, the chuck base is further provided with a plurality of mounting holes spaced apart in the circumferential direction.

[0027] The application also provides a plasma etching device, comprising a plasma reaction chamber, an electrode seat and the electrostatic chuck as described above, the electrode seat and the electrostatic chuck are arranged in the plasma reaction chamber, and the chuck seat of the electrostatic chuck is fixed with the electrode seat.

[0028] The plasma etching device with the electrostatic chuck as described above has similar technical effects to the electrostatic chuck, and details are not repeated here for the sake of brevity. BRIEF DESCRIPTION OF DRAWINGS

[0029] Figure 1 Fig. 1 is a structural schematic diagram of a plasma etching device provided by an embodiment of the application;

[0030] Figure 2 Fig. 2 is a sectional view of a first-specification electrostatic chuck in an installed state;

[0031] Figure 3 Fig. 3 is a sectional view of a second-specification electrostatic chuck in an installed state;

[0032] Figure 4 Fig. 4 is a structural schematic diagram of a chuck seat of the electrostatic chuck;

[0033] Figure 5 Fig. 5 is a structural schematic diagram of a side of a chuck plate of the electrostatic chuck facing the chuck seat;

[0034] Figure 6 Fig. 6 is a structural schematic diagram of a side of the chuck plate of the first-specification electrostatic chuck away from the chuck seat;

[0035] Figure 7 Fig. 7 is a structural schematic diagram of a side of the chuck plate of the second-specification electrostatic chuck away from the chuck seat.

[0036] BRIEF DESCRIPTION OF DRAWINGS Figures 1-7 In the drawings, the reference signs are explained as follows:

[0037] 10 electrostatic chuck; 20 plasma coupling coil; 30 ceramic dielectric window; 40 gas jet nozzle; 50 shielding cover; 60 bias electrode; 70 bias RF power source; 80 plasma reaction chamber; 90 pressure control valve; 100 vacuum pump; 110 excitation source matching network; 120 excitation source RF power source; 130 gas source; 140 wafer; 150 bias matching network; 160 electrode seat; 170 thimble; 180 inner liner;

[0038] 1 chuck seat, 11 cooling flow channel, 12 first seat body, 13 second seat body, 14 first fixing hole, 15 mounting hole, 16 first gas hole, 17 first thimble hole, 18 first conductive hole, 19 first sealing groove;

[0039] 2 chuck plate, 21 adsorption surface, 22 second fixing hole, 23 suction cup, 24 annular plate, 25 second gas hole, 26 second thimble hole, 27 second conductive hole;

[0040] 3 flexible heat-conducting pad;

[0041] 4 first sealing ring;

[0042] 5 cladding ring;

[0043] 6 focusing ring;

[0044] 7 first sealing groove;

[0045] 8 second sealing groove. DETAILED DESCRIPTION

[0046] In order to enable those skilled in the art to better understand the technical solutions of the present application, the present application will be further described in detail below in combination with the drawings and specific embodiments.

[0047] The embodiment of the present application provides an electrostatic chuck and a plasma etching device, wherein the plasma etching device comprises the electrostatic chuck, and specifically, the plasma etching device is as shown in the drawing. Figure 1 The top of the reaction cavity is provided with a cavity cover, the cavity cover is provided with a ceramic dielectric window 30, the inner wall of the reaction cavity is provided with an inner liner 180, and the cavity cover is attached to the inner liner 180 and surrounds to form the plasma reaction chamber 80. A bias electrode 60 is arranged in the plasma reaction chamber 80 to carry a wafer 140 to be processed; a gas jet nozzle 40 is inserted into the ceramic dielectric window 30, and a plasma coupling coil 20 is arranged on the outer periphery of the gas jet nozzle 40; a radio frequency generated by an excitation source radio frequency power supply 120 is output to the plasma coupling coil 20 through an excitation source matching network 110, so that process gas provided by a gas source 130 is sprayed into the plasma reaction chamber 80 through the gas jet nozzle 40 to generate plasma under the action of the plasma coupling coil 20; at the same time, a bias radio frequency power supply 70 provides a bias to the bias electrode 60 through a bias matching network 150 to accelerate the plasma to bombard the wafer 140. Under the action of a vacuum pump 100, the gas material is pumped away through a vacuum pipeline controlled by a pressure control valve 90.

[0048] As shown in Figure 2 and Figure 3 , an electrode seat 160 is arranged in the plasma reaction chamber 80, and the electrostatic chuck 10 is fixedly arranged on the electrode seat 160, and the electrostatic chuck 10 is used for adsorbing and fixing the wafer 140.

[0049] As shown in Figure 2 and Figure 3As shown, the electrostatic chuck 10 comprises a chuck base 1 and a chuck plate 2, wherein the chuck plate 2 is detachably fixed with the chuck base 1, and the chuck plate 2 is provided with an adsorption surface 21 on the side away from the chuck base 1. In the use state, the wafer 140 is placed on the adsorption surface 21.

[0050] The chuck base 1 is provided with a cooling flow channel 11, and cooling liquid flows in the cooling flow channel 11. When the wafer 140 is placed on the adsorption surface 21, the cooling liquid flowing in the cooling flow channel 11 can exchange heat with the wafer 140 through the chuck plate 2, so as to cool the wafer 140.

[0051] In this embodiment, the chuck plate 2 and the chuck base 1 are provided in a split structure. In the use state, the position of the adsorption surface 21 that is not blocked is easy to be damaged. At this time, only the chuck plate 2 needs to be replaced, and the chuck base 1 does not need to be replaced.

[0052] In addition, the chuck plate 2 and the chuck base 1 are detachably connected. The chuck plate 2 can be provided in multiple different specifications, and the fixing structure for fixing the chuck plate 2 with the chuck base 1 is the same. When different specifications of wafers 140 are used, the area of the adsorption surface 21 required is different. At this time, only the corresponding chuck plate 2 needs to be replaced, and the chuck base 1 does not need to be disassembled. That is, the chuck base 1 does not need to be replaced, and only the corresponding chuck plate 2 needs to be replaced.

[0053] Specifically, the structure of the side of the chuck plate 2 facing the chuck base 1 is as shown in Figure 5 The structure of the side of the chuck plate 2 facing the chuck base 1 can be set according to specific conditions, such as Figure 6 The structure of the chuck plate 2 of the first specification is shown. The structure of the electrostatic chuck 10 in the installed state is as shown in Figure 2 Figure 7 The structure of the chuck plate 2 of the second specification is shown. The structure of the electrostatic chuck 10 in the installed state is as shown in Figure 3 The areas of the adsorption surfaces 21 of the chuck plates 2 of the two specifications are different, but the fixing structures for fixing the chuck plates 2 with the chuck base 1 are the same. Specifically, the appropriate chuck plate 2 can be selected according to the actual demand of the adsorption surface 21, and the chuck base 1 does not need to be replaced. The chuck base has high universality, good economy, and good flexibility.

[0054] The chuck plate 2 and the chuck base 1 are provided in a split structure. Since the chuck plate 2 only needs to be fixed with the chuck base 1, and the chuck base 1 can be fixed with the electrode base 160 in the plasma etching machine, only the cooling flow channel 11 is arranged in the chuck base 1, and the cooling flow channel 11 is in communication with the cooling system. When the chuck plate 2 is replaced, since the chuck base 1 does not need to be replaced, the cooling system in communication with the cooling flow channel 11 does not need to be disassembled. The disassembly of the chuck plate 2 and the chuck base 1 is more convenient, time-saving and labor-saving, and the disassembly efficiency can be effectively improved. ​

[0055] The chuck base 1 can be used with various chuck plates 2, has high utilization rate and good flexibility, and can effectively reduce costs.

[0056] In the fixed state, the chuck plate 2 and the chuck base 1 can form a heat conduction cavity therebetween, and the heat conduction cavity is filled with a heat conduction medium. The heat conduction medium can improve the heat conduction performance, thereby improving the cooling effect of the cooling flow channel 11 on the wafer 140 placed on the suction surface 21.

[0057] Specifically, in this embodiment, the heat conduction medium is not limited, and is preferably a flexible heat conduction pad 3. Specifically, it can be a heat conduction adhesive pad or a heat conduction cotton layer, etc. Of course, the heat conduction medium can also be a cooling gas, etc. When the heat conduction medium is a flexible heat conduction pad 3, after replacing the chuck plate 2, the flexible heat conduction pad 3 can be directly placed in the heat conduction cavity, which is relatively convenient to operate. The flexible heat conduction pad 3 is flexible, can fill the heat conduction cavity without affecting the fixation between the chuck plate 2 and the chuck base 1, and can also balance the height error of the space in the heat conduction cavity to ensure the heat conduction effect.

[0058] As shown in FIG. 1, the chuck plate 2 is provided with a plurality of cooling flow channels 11, and each cooling flow channel 11 is formed by a plurality of cooling grooves 5 arranged in the chuck plate 2. Figure 5 As shown in FIG. 1, the chuck plate 2 is provided with a plurality of cooling flow channels 11, and each cooling flow channel 11 is formed by a plurality of cooling grooves 5 arranged in the chuck plate 2.

[0059] In this embodiment, the chuck base 1 is preferably provided in a structure including a first base body 12 and a second base body 13, wherein at least one of the side surface of the first base body 12 facing the second base body 13 and the side surface of the second base body 13 facing the first base body 12 is provided with a cooling groove. After the first base body 12 and the second base body 13 are fixedly combined, the cooling flow channel 11 can be formed by the cooling grooves. Specifically, only the first base body 12 can be provided with the cooling groove, only the second base body 13 can be provided with the cooling groove, or the first base body 12 and the second base body 13 can be respectively provided with the cooling groove.

[0060] Of course, the chuck base 1 can also be formed by machining a hole structure to form the cooling flow channel 11, and the chuck base 1 can be provided in a split structure including the first base body 12 and the second base body 13, and the cooling flow channel 11 can be formed by the cooling grooves arranged between the first base body 12 and the second base body 13. This can simplify the molding process and reduce the processing cost.

[0061] Specifically, the fixing mode between the first base body 12 and the second base body 13 is not limited, and can be fixed by welding or fasteners, which is relatively simple to operate.

[0062] As shown in Figure 4 , the chuck seat 1 is provided with a plurality of first fixing holes 14 spaced apart along the circumference, as shown in Figures 5-7 , the chuck plate 2 is provided with a plurality of second fixing holes 22 corresponding along the circumference, the chuck plate 2 and the chuck seat 1 can be fixed by fasteners passing through the first fixing hole 14 and the second fixing hole 22, of course, the chuck plate 2 and the chuck seat 1 can also be fixed by clamping and the like, and when fixed by fasteners, the overall structure can be simplified, and the structural stability under the fixed state can be ensured.

[0063] The side of the chuck plate 2 away from the chuck seat 1 is provided with a counterbore coaxial with the second fixing hole 22, the first fixing hole 14 is a threaded hole, the mounting bolt passes through the second fixing hole 22 and is fixed in threaded cooperation with the threaded hole, and the head of the mounting bolt is located in the counterbore, ensuring the flatness of the upper surface of the chuck plate 2.

[0064] As shown in Figure 4 , a plurality of mounting holes 15 are arranged on the outer circumferential side of the chuck seat 1 along the circumference, the chuck seat 1 is fixed to the electrode seat 160 by fasteners passing through the mounting holes 15, and the mounting operation is relatively convenient.

[0065] In the embodiment, as shown in Figure 6 and Figure 7 , the chuck plate 2 includes a chuck 23 and an annular plate 24 fixed to the outer periphery of the chuck 23, and the electrostatic chuck 10 can further include a cladding ring 5, as shown in Figure 2 and Figure 3 , the cladding ring 5 can be cladded to the circumferential wall of the chuck seat 1 and the chuck plate 2 to provide protection for the outer periphery of the chuck seat 1 and the chuck plate 2, and the top end of the cladding ring 5 further extends radially inwardly to provide an extension, which covers at least part of the annular plate 24 to provide protection for the annular plate 24, avoiding the probability of etching damage to the circumferential wall of the chuck seat 1, the chuck plate 2 and the annular plate 24, and prolonging the service life of the chuck plate 2 and the chuck seat 1.

[0066] As shown in Figure 2 and Figure 3 , the electrostatic chuck 10 further includes a focusing ring 6, which is provided on the outer periphery of the chuck plate 2, and the upper surface of the focusing ring 6 forms a bearing surface flush with the adsorption surface 21, i.e. the bearing surface and the adsorption surface 21 jointly bear the wafer 140. The focusing ring 6 also focuses the plasma passing through the focusing ring 6 by applying a voltage to the ring, thereby focusing the plasma on the wafer 140 to improve the uniformity of the processing. The extension of the cladding ring 5 is provided with a stepped structure for supporting the focusing ring 6, facilitating the installation of the focusing ring 6.

[0067] The specifications of the cladding ring 5 and the focusing ring 6 are related to the specifications of the chuck plate 2, and when the chuck plate 2 is replaced, the corresponding cladding ring 5 and focusing ring 6 are also replaced.

[0068] In this embodiment, the chuck seat 1 is preferably a metal seat, the annular plate 24 is a metal plate, and the chuck 23 is a ceramic plate, so as to avoid corrosion and damage of the chuck 23. The metal seat and the metal plate can reduce the cost and ensure the heat conduction effect, thereby ensuring the cooling effect of the wafer 140. Specifically, the chuck 23 and the annular plate 24 can be fixed by bonding or the like, which is not limited here.

[0069] The chuck seat 1 is also provided with a first hole part, and the chuck plate 2 is also provided with a second hole part. The first hole part and the second hole part are arranged in the same number and in a corresponding position. In the fixed state of the chuck plate 2 and the chuck seat 1, each first hole part and second hole part are in one-to-one correspondence and communication. Specifically, the plurality of first hole parts include at least one of a cooling gas hole, a conductive hole and a thimble hole.

[0070] Specifically, as shown in Figure 4 , the plurality of first hole parts include a first cooling gas hole 16, a first conductive hole 18 and a first thimble hole 17. Correspondingly, as shown in Figure 5 , the plurality of second hole parts include a second cooling gas hole 25, a second conductive hole 27 and a second thimble hole 26. In the fixed state of the chuck plate 2 and the chuck seat 1, the first cooling gas hole 16 and the second cooling gas hole 25 are in corresponding communication and form a cooling gas channel. The first cooling gas hole 16 penetrates the adsorption surface 21. The cooling gas (such as nitrogen) can pass through the adsorption surface 21 from the cooling gas channel and be sprayed to the wafer 140 placed on the adsorption surface 21, so as to cool the wafer 140. The first conductive hole 18 and the second conductive hole 27 are in communication and form a conductive channel to realize conduction. The first thimble hole 17 and the second thimble hole 26 are in corresponding communication and form a thimble channel. The thimble 170 can pass through the thimble channel from one side of the chuck seat 1 and act on the wafer 140 placed on the adsorption surface 21, so as to realize the lifting of the wafer 140.

[0071] Specifically, in this embodiment, the number and arrangement of the first cooling gas hole 16, the first conductive hole 18 and the first thimble hole 17 are not limited and can be set according to the actual situation.

[0072] In order to ensure the sealing, a second sealing ring is also arranged between the chuck plate 2 and the chuck seat 1. The second sealing ring is arranged along the circumference of the first hole part. The number of the second sealing ring is the same as that of the first hole part and is arranged in one-to-one correspondence. In the fixed state of the chuck plate 2 and the chuck seat 1, the sealing of the communication part of the first hole part and the second hole part can be ensured.

[0073] Specifically, the chuck plate 2 can be provided with a second sealing groove 8, and the second sealing ring can be installed in the second sealing groove 8. Alternatively, the chuck seat 1 can be provided with a second sealing groove 8, or the chuck plate 2 and the chuck seat 1 can be provided with a second sealing groove 8 in correspondence, respectively.

[0074] In the description of the present application, it needs to be understood that the terms "upper", "lower", "top", "bottom", "radial", "circumferential" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the purpose of facilitating the description of the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application.

[0075] In addition, the terms "first", "second" are only for the purpose of description, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features defined with "first", "second" can explicitly or implicitly include one or more of the features. In the description of the present application, the meaning of "a plurality of" is two or more, unless otherwise specifically limited.

[0076] The above is only the preferred embodiment of the present application, and it should be pointed out that for ordinary skilled in the art, without departing from the principles of the present application, a number of improvements and refinements can be made, which should be considered as the protection scope of the present application.

Claims

1. An electrostatic chuck, comprising: The electrostatic chuck comprises a chuck base (1) and a chuck plate (2); The chuck plate (2) is detachably fixed to the chuck base (1), the chuck base (1) is provided with a cooling flow channel (11), and the side of the chuck plate (2) away from the chuck base (1) is provided with an adsorption surface (21); In the fixed state of the chuck plate (2) and the chuck base (1), a heat conduction cavity is formed between the chuck plate (2) and the chuck base (1), and the heat conduction cavity is filled with a heat conduction material.

2. The electrostatic chuck of claim 1, wherein, The heat conduction material is a flexible heat conduction pad (3).

3. The electrostatic chuck of claim 1, wherein, A first sealing ring (4) is further arranged between the chuck base (1) and the chuck plate (2) along the circumference of the heat conduction cavity.

4. The electrostatic chuck of claim 1, wherein, The chuck base (1) comprises a first seat body (12) and a second seat body (13), the first seat body (12) is arranged between the second seat body (13) and the chuck plate (2), and the side surface of the first seat body (12) facing the second seat body (13) or the side surface of the second seat body (13) facing the first seat body (12) is further provided with a cooling groove, and the first seat body (12) and the second seat body (13) are fixedly connected and form the cooling flow channel (11).

5. The electrostatic chuck of claim 4, wherein, The first seat body (12) and the second seat body (13) are fixedly connected by circumferential welding or fasteners.

6. The electrostatic chuck of any of claims 1-5, wherein, A plurality of first fixing holes (14) are arranged on the chuck base (1) along the circumference, and a plurality of second fixing holes (22) are arranged on the chuck plate (2) along the circumference, and the chuck plate (2) and the chuck base (1) are fixed by fasteners passing through the second fixing holes (22) and the first fixing holes (14).

7. The electrostatic chuck of claim 6, wherein, The side surface of the chuck plate (2) away from the chuck base (1) is further provided with a counterbore coaxially communicated with the second fixing hole (22), the first fixing hole (14) is a threaded hole, an installation bolt passes through the second fixing hole (22) and is threadedly connected with the threaded hole, and the head of the installation bolt is located in the counterbore.

8. The electrostatic chuck of any of claims 1-5, wherein, The chuck base (1) is a metal base, the chuck plate (2) comprises a chuck (23) and an annular plate (24) fixedly arranged on the outer periphery of the chuck (23), the chuck (23) is provided with the adsorption surface (21), the annular plate (24) is a metal plate and is fixedly connected with the chuck base (1), and the chuck (23) is a ceramic chuck.

9. The electrostatic chuck of any of claims 1-5, wherein, The chuck plate (2) comprises a chuck (23) and an annular plate (24) fixedly arranged on the outer periphery of the chuck (23), and the chuck (23) is provided with the adsorption surface (21). The electrostatic chuck further comprises a cladding ring (5) cladded on the circumferential side wall of the chuck base (1) and the chuck plate (2), and the top end of the cladding ring (5) is provided with an extension portion inwardly along the radial direction, and the extension portion covers at least part of the annular plate (24).

10. The electrostatic chuck of claim 9, wherein, A focusing ring (6) is further arranged on the outer periphery of the chuck (23), and the extension portion is provided with a stepped structure for supporting the focusing ring (6).

11. The electrostatic chuck of any of claims 1-5, wherein, The chuck seat (1) is further provided with a plurality of first hole portions, the chuck plate (2) is further provided with a plurality of second hole portions, the number of the first hole portions and the second hole portions is same and the positions are corresponding, and each first hole portion is in one-to-one correspondence with each second hole portion in communication under the fixed state of the chuck plate (2) and the chuck seat (1). The plurality of first hole portions include at least one of a cooling gas hole, a conductive hole and a thimble hole.

12. The electrostatic chuck of claim 11, wherein, A second sealing ring is further arranged between the chuck plate (2) and the chuck seat (1), and the second sealing ring is arranged around the circumferences of the first hole portions and the second hole portions.

13. The electrostatic chuck of claim 12, wherein, A side surface of the chuck seat (1) facing the chuck plate (2) or a side surface of the chuck plate (2) facing the chuck seat (1) is further provided with a second sealing groove (8) arranged around the circumferences of the first hole portions, and the second sealing groove (8) is provided with the second sealing ring.

14. The electrostatic chuck of any of claims 1-5, wherein, The chuck seat (1) is further provided with a plurality of mounting holes (15) arranged along the circumferences.

15. A plasma etching apparatus, characterized by, The electrostatic chuck is applied to a plasma reaction chamber (80), an electrode seat (160) and the electrostatic chuck as claimed in any one of claims 1-14, the electrode seat (160) and the electrostatic chuck are arranged in the plasma reaction chamber (80), and the chuck seat (1) of the electrostatic chuck is fixed with the electrode seat (160).

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