ALD coating equipment
By introducing an O3 supply system into the ALD coating equipment to pre-clean and pre-oxidize the silicon wafer surface, the problems of unstable AlOx film quality and uneven thickness were solved, achieving higher quality and more uniform film deposition.
Patent Information
- Application Number
- CN202423322570.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-31
- Publication Date
- 2025-12-09
- Estimated Expiration
- 2034-12-31
AI Technical Summary
Traditional ALD coating equipment cannot completely remove organic contaminants and metal ions from the silicon wafer surface, resulting in unstable AlOx film quality, uneven film thickness, and affecting device performance and reliability.
The TMA supply system, H2O supply system and O3 supply system are connected to the ALD reaction chamber through separate pipelines. O3 gas is used to pre-clean and pre-oxidize the silicon wafer surface to remove organic contaminants and form a dense oxide layer, thereby improving film quality and adhesion.
It effectively removes organic contaminants from the silicon wafer surface, forms a uniform oxide layer, improves the uniformity and adhesion of AlOx films, and avoids problems with inconsistent film thickness and performance.
Smart Images
Figure CN223646632U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model belongs to photovoltaic technical field especially relates to a kind of ALD coating equipment. BACKGROUND
[0002] ALD (Atomic Layer Deposition, atomic layer deposition) is a kind of precision technology for depositing thin film on substrate surface. It is widely used in battery manufacturing field.
[0003] The conventional ALD coating equipment introduces TMA gas and H2O gas into the reaction cabin to deposit AlOx thin film, which cannot completely remove organic contaminants and metal ions on the surface of silicon wafer, resulting in unstable quality of deposited AlOx thin film, affecting the performance and reliability of the device. At the same time, due to the inability to handle the defects on the surface of the silicon wafer, the oxide layer on the surface of the silicon wafer may be uneven, especially on a large-area silicon wafer, which is prone to local thickness inconsistency, affecting the uniformity and adhesion of the thin film. SUMMARY
[0004] The utility model provides a kind of ALD coating equipment, to solve the problem of unstable quality of AlOx thin film and uneven thin film thickness when the conventional equipment is coated.
[0005] The utility model is realized as follows: a kind of ALD coating equipment, comprising:
[0006] TMA supply system, the TMA supply system is used to provide the TMA gas required for AlOx deposition;
[0007] H2O supply system, the H2O supply system is used to provide the H2O gas required for AlOx deposition;
[0008] O3 supply system, the O3 supply system is used to pre-clean and pre-oxidize the surface of silicon wafer before AlOx deposition;And
[0009] ALD reaction cabin, the TMA supply system, the H2O supply system and the O3 supply system are communicated with the ALD reaction cabin by first pipeline, second pipeline and third pipeline respectively, and switch valve is respectively arranged on the first pipeline, the second pipeline and the third pipeline.
[0010] Optionally, the TMA supply system comprises:
[0011] TMA tank, TMA liquid is contained in the TMA tank, one end of the first pipeline is communicated with the TMA tank, and the communication position is higher than the liquid level of TMA liquid;
[0012] a first gas source providing inert gas, the first gas source being in communication with the TMA tank through a gas pipeline, one end of the gas pipeline being connected to the TMA tank and being positioned below the liquid level of the TMA liquid.
[0013] Optionally, the TMA supply system further comprises a TMA source, the TMA source being in communication with the TMA tank.
[0014] Optionally, the H2O supply system comprises:
[0015] a H2O tank containing H2O liquid, one end of the second pipeline being in communication with the H2O tank and being positioned above the liquid level of the H2O liquid;
[0016] a second gas source providing inert gas, the second gas source being in communication with the H2O tank through a gas pipeline, one end of the gas pipeline being connected to the H2O tank and being positioned below the liquid level of the H2O liquid.
[0017] Optionally, the H2O supply system further comprises a H2O pool, the H2O pool being in communication with the H2O tank.
[0018] Optionally, the O3 supply system comprises an ozone generator and an ozone concentration meter, the ozone concentration meter being arranged at the gas output end of the ozone generator, the ozone concentration meter and the ozone generator being signal connected.
[0019] Optionally, the O3 supply system further comprises a tail gas destruction module and an exhaust pipeline, one end of the exhaust pipeline being in communication with the gas output end of the ozone generator and the other end being in communication with the tail gas destruction module.
[0020] Optionally, flow control devices are arranged on at least any one of the first pipeline, the second pipeline and the third pipeline.
[0021] Optionally, the ALD reaction chamber comprises a chamber body, a vacuum device and a heating device.
[0022] the chamber body being in communication with the air exhaust end of the vacuum device;
[0023] the heating device being arranged in the chamber body, the heating temperature of the heating device being between 50-400℃;
[0024] the first pipeline, the second pipeline and the third pipeline being in communication with the chamber body respectively.
[0025] Optionally, at least any two of the first pipeline, the second pipeline and the third pipeline are in communication with the chamber body through a connection main pipeline, the air outlet end of the connection main pipeline being provided with a flow equalization structure.
[0026] Optionally, a SiCl4 supply system is further included, which is in communication with the ALD reaction chamber through a fourth pipeline, and a switch valve is arranged on the fourth pipeline respectively;
[0027] The SiCl4 supply system comprises:
[0028] a SiCl4 tank in which SiCl4 liquid is contained, one end of the second pipeline is in communication with the H2O tank, and the communication position is higher than the liquid level of the SiCl4 liquid;
[0029] a third gas source for providing inert gas, which is in communication with the SiCl4 tank through a gas pipeline, and one end of the gas pipeline connected with the SiCl4 tank is arranged below the liquid level of the SiCl4 liquid.
[0030] The utility model discloses reached the beneficial effects, because through TMA supply system, H2O supply system and O3 supply system all through the pipeline of single communication with ALD reaction chamber, the supply of each gas is controlled individually. Through setting up O3 supply system, before AlOx deposition, O3 gas is passed into to ALD reaction chamber, and the silicon wafer is prewashed and preoxidized with O3, and ozone has very strong oxidizing ability, can effectively remove the organic contaminant on the surface of silicon wafer, and forms a thin oxide layer, improves the quality and adhesion of subsequent deposition film layer, and reduces the defect and pollution on the surface of silicon wafer, provides a more pure, more dense surface. When AlOx deposition is carried out on such substrate surface, it is helpful to the formation and crystallization of subsequent AlOx film, and the uniformity of AlOx film will be improved significantly, and the problem that film thickness and performance are inconsistent due to uneven surface is avoided. BRIEF DESCRIPTION OF DRAWINGS
[0031] Figure 1 is a structure schematic view of an ALD film coating equipment provided by the utility model;
[0032] Figure 2 is a structure schematic view of another ALD film coating equipment provided by the utility model;
[0033] Figure 3 is a structure schematic view of still another ALD film coating equipment provided by the utility model.
[0034] Mark explanation:
[0035] 100, ALD coating equipment; 110, TMA supply system; 111, TMA tank; 112, first gas source; 120, H2O supply system; 121, H2O tank; 122, second gas source; 130, O3 supply system; 131, ozone generator; 132, ozone concentration meter; 140, ALD reaction chamber; 150, first pipeline; 160, second pipeline; 170, third pipeline; 180, connecting main pipe; 181, flow equalizing structure; 190, SiCl4 supply system; 191, SiCl4 tank; 192, third gas source; 193, fourth pipeline. DETAILED DESCRIPTION
[0036] In order to make the purpose, technical scheme and advantages of the present application clearer, the following will further describe the present application in detail with reference to the drawings and examples. The examples of the described embodiments are shown in the drawings, wherein the same or similar reference signs represent the same or similar elements or elements having the same or similar functions throughout. The examples described below by reference to the drawings are exemplary and are only used to explain the present application, and cannot be understood as limiting the present application. In addition, it should be understood that the specific embodiments described herein are only used to explain the present application and do not limit the present application.
[0037] In the description of the present application, it should be understood that the terms "length", "width", "upper", "lower", "left", "right", "horizontal", "top", "bottom" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application.
[0038] In addition, the terms "first", "second" are only for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined with "first", "second" can explicitly or implicitly include one or more of the features. In the description of the present application, the meaning of "a plurality of" is two or more, unless otherwise specifically limited.
[0039] In the description of the utility model, it is necessary to explain, unless another explicit provision and limitation, the term '' install '' '' connect '' '' connection '' should do the broad sense understanding, for example, can be fixed connection, also can be detachable connection, or integrally connected, can be mechanical connection, also can be electric connection or can communicate with each other, can be directly connected, also can be indirectly connected through intermediate medium, can be the intercommunication of two elements or the interaction of two elements. For ordinary skilled in the art, the specific meaning of the above-mentioned terms in the utility model can be understood according to specific circumstances.
[0040] In the utility model, unless another explicit provision and limitation, the first feature is '' on '' or '' below '' the second feature can include that the first and second features are in direct contact, or the first and second features are not in direct contact but are in contact through another feature between them. Moreover, the first feature is '' on '' '' above '' and '' on '' the second feature includes that the first feature is directly above and obliquely above the second feature, or only indicates that the horizontal height of the first feature is higher than that of the second feature. The first feature is '' below '' '' below '' and '' below '' the second feature includes that the first feature is directly below and obliquely below the second feature, or only indicates that the horizontal height of the first feature is less than that of the second feature.
[0041] The following disclosure provides many different embodiments or examples for implementing different structures of the utility model. In order to simplify the disclosure of the utility model, the components and settings of specific examples are described below. Of course, they are only examples, and the purpose is not to limit the utility model. In addition, the utility model can repeatedly refer to numbers and / or reference letters in different examples, and such repetition is for the purpose of simplification and clarity, which itself does not indicate the relationship between the various embodiments and / or settings discussed. In addition, the utility model provides examples of various specific processes and materials, but those skilled in the art can realize the application of other processes and / or the use of other materials.
[0042] The utility model discloses a TMA supply system, H2O supply system and O3 supply system all communicate with ALD reaction cabin through separate pipeline, and the supply of each gas is controlled individually. By setting O3 supply system, O3 gas is introduced into the ALD reaction cabin before AlOx deposition, and the silicon wafer is pre-cleaned and pre-oxidized by O3. Ozone has strong oxidizing ability, can effectively remove organic pollutants on the surface of the silicon wafer, and form a thin oxide layer, improve the quality and adhesion of the subsequent deposition film layer, and reduce the defects and pollution on the surface of the silicon wafer, provide a more pure, more dense surface. When AlOx deposition is carried out on such substrate surface, it is helpful to the formation and crystallization of subsequent AlOx thin film, and the uniformity of AlOx thin film will be significantly improved, avoiding the problem of inconsistent film thickness and performance caused by uneven surface.
[0043] Example One
[0044] As Figure 1 shown, the embodiment provides an ALD coating equipment 100, comprising:
[0045] a TMA supply system 110 for providing TMA gas required for AlOx deposition;
[0046] a H2O supply system 120 for providing H2O gas required for AlOx deposition;
[0047] an O3 supply system 130 for pre-cleaning and pre-oxidizing the surface of the silicon wafer before AlOx deposition; and
[0048] an ALD reaction chamber 140, the TMA supply system 110, the H2O supply system 120 and the O3 supply system 130 are respectively communicated with the ALD reaction chamber 140 through a first pipeline 150, a second pipeline and a third pipeline, and a switch valve is arranged on each of the first pipeline 150, the second pipeline and the third pipeline.
[0049] TMA (Trimethylaluminum) is one of the commonly used precursors in ALD process, which is used to provide aluminum source. The TMA supply system 110 is responsible for providing TMA gas to the ALD reaction chamber 140, so as to react with water or other oxygen source to generate AlOx film layer.
[0050] The H2O supply system 120 is used to provide water vapor as the second precursor for chemical reaction with TMA during the process. By alternately introducing water vapor and TMA into the reaction chamber, an atomic level aluminum oxide film can be formed on the surface of the silicon wafer.
[0051] The O3 supply system 130 is used to provide O3 (ozone) for pre-cleaning and pre-oxidizing the surface of the silicon wafer before starting to deposit AlOx film. On the one hand, ozone is a strong oxidizing agent, which can react with organic contaminants (such as residual organic matter, grease, etc.) on the surface of the silicon wafer, and oxidize them into carbon dioxide and water, thereby effectively removing these contaminants. After ozone pre-cleaning, the organic contaminants on the surface of the silicon wafer are significantly reduced, and the cleanliness of the surface is improved. Ozone can also oxidize metal ions on the surface of the silicon wafer, so that they form volatile oxides or water-soluble compounds, which are then pumped away or washed away. Thus, the metal ion contamination on the surface of the silicon wafer is effectively controlled, and the influence of metal ions on the deposition of AlOx film is avoided.
[0052] On the other hand, ozone can react with silicon atoms on the surface of the silicon wafer to form a dense silicon dioxide (SiO2) oxide layer. This SiO2 film can serve as a base layer for AlOx deposition, improving the interface quality of the subsequent deposited film. After pre-oxidation, a dense SiO2 film is formed on the surface of the silicon wafer, which can enhance the adhesion of the substrate to the AlOx film and improve the adhesion of the film. The reaction during the ozone pre-oxidation process can also uniformly cover the surface of the silicon wafer, reducing surface roughness and unevenness. This makes the surface of the silicon wafer more uniform and uniform, which helps the uniform deposition of the subsequent AlOx film and improves the quality and performance of the film.
[0053] The ALD reaction chamber 140 is used to place the silicon wafer, usually a sealed chamber, and the silicon wafer is placed in the chamber. TMA, H2O and O3 are connected to the ALD reaction chamber 140 through three pipes (first pipe 150, second pipe, third pipe), and each pipe is equipped with a switch valve to control the time and amount of different reaction gases flowing into the reaction chamber. For example, the reaction sequence can be controlled by opening and closing each switch valve in different order. Specifically, first open the switch valve on the third pipe to allow O3 gas to flow into the ALD reaction chamber 140 first to perform oxidation reaction on the silicon wafer; then close the switch valve on the third pipe and open the switch valve on the first pipe 150 and the switch valve on the second pipe 160 to allow TMA gas and H2O gas to flow into the ALD reaction chamber 140 to deposit AlOx film on the silicon wafer.
[0054] The control of the switch valves on the first pipe 150, the second pipe and the third pipe can be achieved in various ways. Specifically, each switch valve can be opened and closed in sequence manually, or a timing device can be set up,
[0055] It can be understood that the amount of gas introduced can be controlled by controlling the length of time each switch valve is opened, or by setting a flow meter, or by other means, which are not limited here.
[0056] In the embodiment, the TMA supply system 110, the H2O supply system 120 and the O3 supply system 130 are all communicated with the ALD reaction chamber 140 through separate pipelines, so as to facilitate the independent control of the supply of each gas. By arranging the O3 supply system 130, the O3 gas is introduced into the ALD reaction chamber 140 before the deposition of AlOx, so as to pre-clean and pre-oxidize the silicon wafer with O3. The ozone has strong oxidizing ability, can effectively remove the organic contaminants on the surface of the silicon wafer, and form a thin oxide layer, so as to improve the quality and adhesion of the subsequent deposited film layer, and reduce the defects and contamination on the surface of the silicon wafer, and provide a more pure and dense surface. When the AlOx deposition is performed on such a substrate surface, the formation and crystallization of the subsequent AlOx thin film are facilitated, the uniformity of the AlOx thin film is significantly improved, and the problem of inconsistent film thickness and performance caused by the non-uniform surface is avoided.
[0057] Example Two
[0058] In some embodiments, the TMA supply system 110 comprises:
[0059] a TMA tank 111, in which the TMA liquid is stored, one end of the first pipeline 150 is communicated with the TMA tank 111, and the communication position is higher than the liquid level of the TMA liquid;
[0060] a first gas source 112, which provides inert gas, and the first gas source 112 is communicated with the TMA tank 111 through a gas pipeline, and the end of the gas pipeline connected with the TMA tank 111 is below the liquid level of the TMA liquid.
[0061] The TMA tank 111 is used for storing the TMA liquid. TMA is a precursor material, which is in a liquid state at room temperature. Since TMA has high volatility and chemical activity, it needs to be stored at appropriate temperature and pressure. The tank is used for communicating the first pipeline 150, and the communication position is higher than the liquid level of the TMA liquid, so that the TMA gas can be smoothly transported to the ALD reaction chamber 140 through the first pipeline 150, and liquid leakage is avoided.
[0062] The first gas source 112 provides inert gas (such as nitrogen N2 or argon Ar), which is used to push the TMA gas from the tank to the ALD reaction chamber 140. The inert gas prevents the TMA from reacting with oxygen or moisture, and ensures that the TMA remains pure during the transmission process. The first gas source 112 is communicated with the TMA tank 111 through a gas pipeline. The end of the gas pipeline is below the liquid level of the TMA liquid, so that the inert gas can fully contact with the TMA liquid and carry the TMA gas out of the tank, and the TMA liquid is prevented from directly contacting with the wall of the first pipeline 150.
[0063] In some embodiments, the TMA supply system 110 further comprises a TMA source, which is in communication with the TMA tank 111.
[0064] The TMA source is the original storage container of TMA, which is used to provide a large amount of TMA liquid to supply TMA raw material for a long time, ensuring that the TMA tank 111 has sufficient TMA liquid supply during use.
[0065] Example Three
[0066] In some embodiments, the H2O supply system 120 comprises:
[0067] An H2O tank 121, which contains H2O liquid, one end of the second pipe 160 is in communication with the H2O tank 121, and the communication position is higher than the liquid level of the H2O liquid;
[0068] A second gas source 122, which provides inert gas, the second gas source 122 is in communication with the H2O tank 121 through a gas pipe, and the end of the gas pipe connected to the H2O tank 121 is below the liquid level of the H2O liquid.
[0069] The H2O tank 121 is used to store H2O liquid, i.e. water. Water is usually used as one of the precursors in the ALD process in the form of water vapor, which reacts with TMA to form AlOx film. The tank is used to communicate with the second pipe 160, and the communication position is higher than the liquid level of the H2O liquid, which can ensure that the water vapor is transported through the second pipe 160 instead of liquid water. This helps to prevent liquid water from entering the reaction chamber and avoid possible process problems and equipment damage.
[0070] The second gas source 122 provides inert gas (such as nitrogen N2 or argon Ar) to push the water vapor from the tank to the ALD reaction chamber 140. The main role of the inert gas is to prevent the water vapor from reacting with unwanted gases and ensure that the water vapor remains pure during transmission. The second gas source 122 is in communication with the H2O tank 121 through a gas pipe. The end of the gas pipe connected to the H2O tank 121 is below the liquid level of the H2O liquid, which can ensure that the inert gas can fully contact the H2O liquid and carry the H2O gas out of the tank, while avoiding direct contact of liquid water with the pipe wall.
[0071] In some embodiments, the H2O tank 121 can also be equipped with a heating device to help water evaporate into water vapor at the appropriate temperature.
[0072] In some embodiments, the H2O supply system 120 further comprises an H2O pool, which is in communication with the H2O tank 121.
[0073] The H2O pool is used to store a large amount of H2O liquid as a backup and supplement to the H2O tank 121. The H2O pool usually has a large capacity and can supply H2O liquid for a long time, ensuring the continuity and stability of the process. The H2O pool is connected to the H2O tank 121 through a pipeline, ensuring that the tank has enough H2O liquid supply during use. The pipeline is usually equipped with valves and flow meters to control the delivery speed and amount of liquid.
[0074] Example Four
[0075] In some embodiments, the O3 supply system 130 includes an ozone generator 131 and an ozone concentration meter 132, which is arranged at the gas output end of the ozone generator 131, and the ozone concentration meter 132 and the ozone generator 131 are signal connected.
[0076] The ozone generator 131 is used to generate ozone gas. The ozone generator 131 converts oxygen (O2) into ozone (O3) by methods such as corona discharge or ultraviolet irradiation. The generated ozone gas is delivered outward through the gas output end.
[0077] The ozone concentration meter 132 is used to measure the concentration of the generated ozone gas, ensuring that the ozone gas remains within the predetermined concentration range during delivery. The ozone concentration meter 132 is arranged at the gas output end of the ozone generator 131, so that the concentration of the ozone gas can be monitored in real time. The ozone concentration meter 132 is signal connected with the ozone generator 131, which can adjust the generation rate of the ozone generator 131 through feedback control, to ensure the stability of the concentration of the output ozone gas. For example, a preset concentration is set on the ozone concentration meter 132, when the ozone concentration detected by the ozone concentration meter 132 exceeds the preset concentration, the ozone concentration meter 132 sends a stop signal to the ozone generator 131, and the ozone generator 131 stops working and continues to produce ozone; when the ozone concentration detected by the ozone concentration meter 132 is lower than the preset concentration, the ozone concentration meter 132 sends a start signal to the ozone generator 131, and the ozone generator 131 resumes work and continues to produce ozone.
[0078] In some embodiments, the O3 supply system 130 also includes a tail gas destruction module and an exhaust pipeline, one end of which is connected to the gas output end of the ozone generator 131, and the other end is connected to the tail gas destruction device.
[0079] The tail gas destruction module is used to process excess ozone gas, ensuring safe discharge and avoiding damage to equipment caused by large amounts of ozone gas accumulating in the pipeline.
[0080] Specifically, the exhaust gas destruction module can include a catalytic decomposer, which uses a catalyst (such as manganese oxide, platinum, etc.) to decompose the ozone into oxygen. A thermal decomposer can also be included, which decomposes the ozone into oxygen by heating. The thermal decomposer usually includes a heating element and a temperature control device, which ensures that the decomposition process is carried out at a safe temperature. An adsorbent can also be included, which uses an adsorbent material (such as activated carbon, molecular sieve, etc.) to adsorb and decompose the ozone. The adsorbent is placed in an adsorption column, and the exhaust gas is decomposed as it passes through the adsorption column. Several combinations are also possible, which are not limited here.
[0081] Example Five
[0082] In some embodiments, a flow control device is provided on at least one of the first pipe 150, the second pipe 160, and the third pipe 170.
[0083] Specifically, a flow control device can be provided on each of the first pipe 150, the second pipe 160, and the third pipe 170, or only on the first pipe 150, or only on the second pipe 160, or on the first pipe 150 and the third pipe 170, and other combinations are also possible.
[0084] The first pipe 150 is used to transport TMA (trimethylaluminum) gas from the TMA supply system 110 to the ALD reaction chamber 140. A flow control device is provided on the first pipe 150 to ensure that the flow of TMA gas remains within a predetermined range.
[0085] The second pipe 160 is used to transport water vapor (H2O) from the H2O supply system 120 to the ALD reaction chamber 140. A flow control device is provided on the second pipe 160 to ensure that the flow of water vapor remains within a predetermined range.
[0086] The third pipe 170 is used to transport ozone (O3) from the O3 supply system 130 to the ALD reaction chamber 140. A flow control device is provided on the third pipe 170 to ensure that the flow of ozone gas remains within a predetermined range.
[0087] The flow control device usually includes a flow meter, which is used to monitor the gas flow in real time. The flow meter provided on each pipe can be signal-connected to the on-off valve on the corresponding pipe, and the opening degree of the on-off valve can be controlled by the flow value fed back by the flow meter. The flow control device can also include a control valve, which is used to adjust the gas flow. The flow meter is signal-connected to the control valve, and the opening degree of the control valve can be controlled by the flow value fed back by the flow meter.
[0088] Example Six
[0089] In some embodiments, the ALD reaction chamber 140 includes a chamber body, a vacuum device, and a heating device;
[0090] The cabin is connected to the vacuum pump's extraction end;
[0091] The heating device is located inside the cabin, and the heating temperature of the heating device is between 50-400℃;
[0092] The first pipe 150, the second pipe 160, and the third pipe 170 are respectively connected to the cabin.
[0093] The chamber is the main site for the ALD reaction, used to contain the substrate and perform thin film deposition. The chamber is typically a sealed cavity to ensure a pure and controllable internal environment. It is equipped with doors for loading and unloading silicon wafers. The chamber is connected to three conduits: a first conduit 150, a second conduit 160, and a third conduit 170, for introducing TMA gas, water vapor, or ozone gas.
[0094] The chamber is connected to the evacuation end of the vacuum device to maintain a high vacuum environment inside the chamber, reduce impurities and moisture in the air, and ensure that gases can be effectively removed after the reaction, thus ensuring the purity and efficiency of the reaction. The vacuum device typically includes a vacuum pump, valves, and evacuation piping. The vacuum pump is used to remove the gas, the valves are used to control the evacuation process, and the evacuation piping connects the chamber to the vacuum pump.
[0095] The heating system is used to control the temperature inside the chamber, ensuring the reaction proceeds under optimal conditions. It typically includes a heating element (such as a resistance heater) and a temperature control unit. The heating element heats the substrate inside the chamber, while the temperature control unit monitors and adjusts the temperature in real time. The heating temperature can be set between 50-400°C, with the specific temperature adjusted according to process requirements.
[0096] Understandably, each gas supply system supplies different gases to the chamber in sequence at different times. Residual gases or some byproducts after the previous reaction can be removed by a vacuum device to ensure the purity of the next reaction.
[0097] like Figure 2 As shown, in some embodiments, at least two of the first pipe 150, the second pipe and the third pipe 170 are evenly distributed on the cabin and are connected to the cabin through a connecting main pipe 180. The air outlet end of the connecting main pipe 180 is provided with a flow equalization structure 181.
[0098] The flow equalization structure 181 is used to ensure the uniform distribution of the gas in the chamber, and to improve the uniformity and quality of the deposited film. The flow equalization structure 181 includes a plurality of gas outlets, which helps the gas to be discharged from the plurality of gas outlets at the same time, and facilitates the uniform distribution of the gas in the chamber. The flow equalization structure 181 can be arranged inside the chamber, or the plurality of gas outlets can be in communication with the chamber wall of the chamber, which is not limited here.
[0099] The connecting pipe 180 is used to connect each pipe to the flow equalization structure 181, so that the reaction gas transported in each pipe can be more uniformly released into the chamber through the flow equalization structure 181, and to ensure that all the introduced gas is uniformly distributed in the chamber. By connecting each pipe that transports different reaction gas to the flow equalization structure 181 through the connecting pipe 180, one flow equalization structure 181 can be shared, which is beneficial to save the manufacturing and maintenance cost of the equipment, and can also simplify the structure of the equipment. The flow equalization structure 181 is arranged at the gas outlet end of the connecting pipe 180, and is used to uniformly distribute the gas flow.
[0100] Specifically, the first pipe 150, the second pipe 160 and the third pipe 170 can all be connected to the chamber through the connecting pipe 180, or the first pipe 150 and the second pipe 160 can be connected to the chamber through the connecting pipe 180, or the first pipe 150 and the third pipe 170 can be connected to the chamber through the connecting pipe 180, or the second pipe 160 and the third pipe 170 can be connected to the chamber through the connecting pipe 180, which is not limited here.
[0101] In some embodiments, the connecting pipe can also be connected to an inert gas source, and the inert gas is introduced into the connecting pipe before another reaction gas is introduced, which is beneficial to avoid the reaction between the previously introduced reaction gas in the connecting pipe and the other gas.
[0102] In some embodiments, the gas supply system that is not connected to the connecting pipe 180 can also be connected to another flow equalization structure, and the gas can be directly introduced into the chamber to avoid the reaction between the gas and the residual gas in the connecting pipe 180.
[0103] Example Six
[0104] As shown in Figure 3 In some embodiments, the ALD film coating equipment further includes a SiCl4 supply system 190, which is connected to the ALD reaction chamber 140 through a fourth pipe 193, and a switch valve is arranged on the fourth pipe 193.
[0105] The SiCl4 supply system 190 includes:
[0106] SiCl4 tank 191, SiCl4 tank 190 contains SiCl4 liquid, one end of the fourth pipeline 193 is in communication with the SiCl4 tank, and the communication position is higher than the liquid level of the SiCl4 liquid;
[0107] The third gas source 192 provides inert gas, and the third gas source 192 is in communication with the SiCl4 tank 191 through a gas pipeline. One end of the gas pipeline connected to the SiCl4 tank 191 is below the liquid level of the SiCl4 liquid.
[0108] The SiCl4 tank 191 is used to contain silicon tetrachloride liquid, which is a precursor material for preparing silicon oxide layer. The fourth pipeline 193 connects the SiCl4 tank with the ALD reaction chamber for transporting SiCl4 precursor. One end of the fourth pipeline 193 is in communication with the SiCl4 tank, and the communication position is higher than the liquid level of the SiCl4 liquid, preventing the SiCl4 liquid from flowing back into the fourth pipeline 193 and avoiding clogging and contamination of the fourth pipeline 193. The on-off valve provided on the fourth pipeline 193 is used to control the transportation of SiCl4 precursor. The on-off valve can be opened or closed in different process steps to ensure accurate and independent control of the gas.
[0109] The third gas source 192 provides inert gas (such as nitrogen N2 or argon Ar) for pushing SiCl4 from the tank to the ALD reaction chamber 140. The main role of the inert gas is to prevent water vapor from reacting with unwanted gases and ensure that the water vapor remains pure during transportation. The third gas source 192 is in communication with the SiCl4 tank 191 through a gas pipeline. One end of the gas pipeline connected to the SiCl4 tank 191 is below the liquid level of the SiCl4 liquid, which can ensure that the inert gas can fully contact the SiCl4 liquid and carry the SiCl4 gas out of the tank, while avoiding direct contact of liquid water with the pipe wall.
[0110] Specifically, the SiCl4 supply system is first opened, and at a temperature of 200-500°C and a pressure of 0.3-0.8 mbar, N2 gas is used to bubble and carry liquid SiCl4 silicon source into the ALD reaction chamber 140 through the fourth pipeline 193, so that SiCl4 is adsorbed on the surface of the silicon wafer. Then the SiCl4 supply system is closed, and the H2O supply system is opened, so that N2 gas bubbles and carries H2O into the ALD reaction chamber 140, so that the Si adsorbed on the surface of the silicon wafer is oxidized to obtain a SiO2 film layer.
[0111] In this embodiment, by setting the SiCl4 supply system to pass SiCl4 gas into the ALD reaction chamber 140, the silicon wafer can complete the growth of the silicon oxide film layer in the ALD reaction chamber 140.
[0112] The above merely describes preferred embodiments of the present application and is not intended to limit the present application, and any modification, equivalent replacement, and improvement within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims
1. An ALD coating equipment, characterized in that, include: TMA supply system, wherein the TMA supply system is used to provide the TMA gas required for AlOx deposition; H2O supply system, wherein the H2O supply system is used to provide the H2O gas required for AlOx deposition; An O3 supply system is used to pre-clean and pre-oxidize the silicon wafer surface before AlOx deposition; as well as The ALD reaction chamber is connected to the TMA supply system, the H2O supply system and the O3 supply system through a first pipe, a second pipe and a third pipe, respectively. Switch valves are installed on the first pipe, the second pipe and the third pipe.
2. The ALD coating equipment as described in claim 1, characterized in that, The TMA supply system includes: A TMA tank is filled with liquid TMA. One end of the first pipe is connected to the TMA tank, and the connection point is higher than the liquid level of the TMA liquid. A first gas source provides inert gas and is connected to the TMA tank via a gas pipeline. One end of the gas pipeline connected to the TMA tank is positioned below the surface of the TMA liquid.
3. The ALD coating equipment as described in claim 2, characterized in that, The TMA supply system also includes a TMA material source, which is connected to the TMA tank.
4. The ALD coating equipment as described in claim 1, characterized in that, The H2O supply system includes: An H2O container is provided, which contains H2O liquid. One end of the second pipe is connected to the H2O container, and the connection point is higher than the liquid level of the H2O liquid. A second gas source provides inert gas and is connected to the H2O tank via a gas pipeline. One end of the gas pipeline connected to the H2O tank is positioned below the surface of the H2O liquid.
5. The ALD coating equipment as described in claim 1, characterized in that, The H2O supply system also includes an H2O pool, which is connected to the H2O material tank.
6. The ALD coating equipment as described in claim 1, characterized in that, The O3 supply system includes an ozone generator and an ozone concentration meter. The ozone concentration meter is located at the gas output end of the ozone generator and is signal-connected to the ozone generator.
7. The ALD coating equipment as described in claim 6, characterized in that, The O3 supply system also includes an exhaust gas destruction module and an exhaust pipe. One end of the exhaust pipe is connected to the gas output end of the ozone generator, and the other end is connected to the exhaust gas destruction device.
8. The ALD coating equipment as described in claim 1, characterized in that, A flow control device is provided on at least one of the first pipe, the second pipe, and the third pipe.
9. The ALD coating equipment as described in claim 1, characterized in that, The ALD reaction chamber includes a chamber body, a vacuum device, and a heating device; The chamber is connected to the vacuum pump's extraction end; The heating device is placed inside the cabin, and the heating temperature of the heating device is between 50-400℃. The first pipe, the second pipe, and the third pipe are respectively connected to the cabin.
10. The ALD coating equipment as described in claim 9, characterized in that, At least two of the first, second, and third pipes are evenly distributed on the cabin and are connected to the cabin via a connecting main pipe. The outlet end of the connecting main pipe is provided with a flow equalization structure.
11. The ALD coating equipment as described in claim 1, characterized in that, It also includes a SiCl4 supply system, which is connected to the ALD reaction chamber via a fourth pipeline, and switching valves are installed on the fourth pipeline. The SiCl4 supply system includes: A SiCl4 container is provided, which contains liquid SiCl4. One end of the fourth pipe is connected to the SiCl4 container, and the connection point is higher than the liquid level of the SiCl4 liquid. A third gas source provides inert gas and is connected to the SiCl4 tank via a gas pipeline. One end of the gas pipeline connected to the SiCl4 tank is positioned below the surface of the SiCl4 liquid.