Semiconductor processing equipment and gas spraying assembly thereof

Abstract

The utility model relates to the technical field of semiconductor processing, in particular to semiconductor processing equipment and a gas spraying assembly thereof. A first gas interval in the gas spraying assembly is communicated with a gas inlet hole, gas can enter the first gas interval through the gas inlet hole, the gas in the first gas interval enters a second gas interval through a first spraying hole in a first gas uniformizing disc, and under the action of the first spraying hole, the gas is dispersed in the direction perpendicular to the thickness direction of the first gas uniformizing disc; the gas in the second gas interval is sprayed out through the second spraying holes, and after the gas is distributed again through the second spraying holes, the gas can enter the semiconductor processing equipment more uniformly. Due to the fact that the projection of each first spraying hole on the second gas uniformizing disc in the thickness direction of the first gas uniformizing disc is staggered from the second spraying holes, gas can be sprayed out of the second spraying holes only after passing through the first spraying holes and a bent flowing path, the transverse diffusion capacity of the gas is improved, and the gas is distributed more evenly after being sprayed out of the second spraying holes.

Description

Technical Field

[0001] This application relates to the field of semiconductor processing technology, specifically to a semiconductor processing device and its gas spraying assembly. Background Technology

[0002] Semiconductor processing equipment is used to process semiconductor devices. Common semiconductor processing equipment includes semiconductor coating equipment and semiconductor etching equipment. Both semiconductor coating and etching equipment have gas spray heads. Current gas spray heads typically use a single-layer gas disk with nozzles of the same diameter evenly distributed across the entire board surface. The fixed diameter and distribution of the gas nozzles in traditional spray heads lead to significant differences in gas velocity and flow rate between the central and edge regions. Because the gas velocity is faster in the central region and slower at the edges, the particle distribution within the reaction chamber is uneven, thus affecting the uniformity and stability of the etching or deposition process. Currently, methods such as increasing the number of nozzles, adjusting the size and shape of the nozzles, or modifying the nozzle distribution are commonly used to improve gas distribution. However, these methods have limited effectiveness, and the uniformity of gas distribution remains poor. Utility Model Content

[0003] This application provides a gas spraying assembly for semiconductor processing equipment to improve the problem of poor gas uniformity in current gas spraying assemblies.

[0004] In addition, the purpose of this application is to provide a semiconductor processing apparatus using the above-mentioned gas spraying assembly.

[0005] In a first aspect, one embodiment provides a gas spraying assembly for use in a semiconductor processing apparatus, comprising:

[0006] An air intake cover having an air intake hole for gas to enter;

[0007] A first gas distribution disk, the first gas distribution disk having at least two first nozzles, the first nozzles being for gas to pass through;

[0008] And a second gas distribution disk having at least two second nozzles for ejecting gas;

[0009] The first gas equalization disk and the second gas equalization disk are arranged along the thickness direction of the first gas equalization disk, with the first gas equalization disk located on the side of the second gas equalization disk facing the air inlet. The side of the first gas equalization disk facing away from the second gas equalization disk has a first gas gap, which connects the air inlet and each of the first nozzles. The side of the first gas equalization disk facing the second gas equalization disk has a second gas gap, which connects each of the first nozzles and each of the second nozzles. The projections of each of the first nozzles along the thickness direction of the first gas equalization disk onto the second gas equalization disk are all offset from the second nozzles.

[0010] Furthermore, in one embodiment, the flow area of ​​the first nozzle near the center of the first air distribution plate is less than or equal to the flow area of ​​the first nozzle away from the center of the first air distribution plate; and / or the first nozzle is an elongated hole, and in the length direction of the first nozzle, the flow area per unit length in the first nozzle is S, and the S of the first nozzle near the center of the first air distribution plate is less than or equal to the S of the first nozzle away from the center of the first air distribution plate.

[0011] Furthermore, in one embodiment, the flow area of ​​the second nozzle near the center of the second air distribution plate is less than or equal to the flow area of ​​the second nozzle away from the center of the second air distribution plate, and / or the second nozzle is an elongated hole, and the flow area per unit length in the second nozzle is s in the length direction of the second nozzle, and s of the second nozzle near the center of the second air distribution plate is less than or equal to s of the second nozzle away from the center of the second air distribution plate.

[0012] Furthermore, in one embodiment, the flow area of ​​the first nozzle located in the middle of the first air distribution plate is smaller than the flow area of ​​the first nozzle located at the edge of the first air distribution plate, and / or the flow area of ​​the second nozzle located in the middle of the second air distribution plate is smaller than the flow area of ​​the second nozzle located at the edge of the second air distribution plate.

[0013] Furthermore, in one embodiment, the sum of the flow areas of each first nozzle on the first air distribution plate is greater than the sum of the flow areas of each second nozzle on the second air distribution plate.

[0014] In a further embodiment, the second gas distribution plate is an exposed plate for being exposed in the reaction chamber of the semiconductor processing device, and the second nozzle is used to inject gas into the reaction chamber.

[0015] In a further embodiment, the diameter of the second nozzle gradually increases from the direction close to the first gas equalizing plate to the direction away from the first gas equalizing plate, or the second nozzle is a stepped nozzle, with the opening of the second nozzle facing the first gas equalizing plate being smaller than the opening facing away from the first gas equalizing plate.

[0016] In a further embodiment, the first air distribution disk includes at least two concentric rings and connecting ribs connecting two adjacent concentric rings. The first nozzle is located between two adjacent concentric rings. A plurality of second nozzles form a second nozzle group. Each second nozzle in the second nozzle group is arranged in a ring. The projection of the concentric rings along the axial direction of the concentric rings onto the second air distribution disk covers the ring area where the second nozzle group is located.

[0017] In a further embodiment, the second gas gap is 0.5 mm to 3 mm, 3 mm to 5 mm, or 5 mm to 10 mm in the thickness direction of the first gas distribution plate.

[0018] In a second aspect, one embodiment provides a semiconductor processing apparatus, including a reaction chamber and a gas spraying assembly as described in any embodiment of the first aspect, the gas spraying assembly being used to supply gas to the reaction chamber.

[0019] According to the gas spray assembly of the above embodiment, the first gas interval is connected to the air inlet, allowing gas to enter the first gas interval through the air inlet. Gas in the first gas interval enters the second gas interval through the first nozzle on the first gas distribution plate. Under the action of the first nozzle, the gas disperses in a direction perpendicular to the thickness of the first gas distribution plate. Gas in the second gas interval is ejected through the second nozzle. After being redistributed by the second nozzle, the gas can enter the semiconductor processing device more uniformly. Since the projections of each first nozzle onto the second gas distribution plate along the thickness direction of the first gas distribution plate are offset from the second nozzles (i.e., the first and second nozzles are staggered in the thickness direction of the first gas distribution plate), the gas passes through the first nozzle and then flows through a curved path before being ejected from the second nozzle. This increases the lateral diffusion capacity of the gas, resulting in a more uniform distribution of the gas after it exits through the second nozzle. Attached Figure Description

[0020] Figure 1 This is a cross-sectional view of the gas spray assembly installed at the top of the reaction chamber in one embodiment;

[0021] Figure 2 An exploded view of a gas spray assembly in one embodiment;

[0022] Figure 3 This is a cross-sectional view of the explosion state of a gas spray assembly in one embodiment (the arrows in the figure indicate the direction of airflow);

[0023] Figure 4 This is a schematic diagram of the structure of the first gas distribution disk in one embodiment;

[0024] Figure 5 This is a schematic diagram of the structure of the second gas distribution disk in one embodiment;

[0025] Figure 6 This is a schematic diagram showing the positions of the first and second nozzles in one embodiment;

[0026] Figure 7 This is a partial structural cross-sectional view of the second gas distribution disk in one embodiment.

[0027] List of feature names corresponding to the reference numerals in the figure: 1. Reaction chamber; 11. Reaction chamber shell; 2. Gas spray assembly; 21. Inlet cover; 211. Inlet hole; 212. First gas distribution plate step; 213. Second gas distribution plate step; 22. First gas distribution plate; 221. First nozzle; 2211. First hole wall; 2212. Second hole wall; 222. Concentric ring; 223. Connecting rib; 231. Second nozzle; 23. Second gas distribution plate; 24. First gas gap; 25. Second gas gap; 3. Support seat.

[0028] Explanation of reference numerals in parentheses in the accompanying drawings: The feature referred to by the reference numerals in parentheses in the accompanying drawings is the feature represented by both the number inside the parentheses and the number outside the parentheses. Detailed Implementation

[0029] The present application will now be described in further detail with reference to the accompanying drawings and specific embodiments. Similar elements in different embodiments are referred to by related similar element reference numerals. In the following embodiments, many details are described to facilitate a better understanding of the present application. However, those skilled in the art will readily recognize that some features may be omitted in different situations, or may be replaced by other elements, materials, or methods. In some cases, certain operations related to the present application are not shown or described in the specification. This is to avoid obscuring the core parts of the present application with excessive description. For those skilled in the art, detailed description of these related operations is not necessary; they can fully understand the related operations based on the description in the specification and general technical knowledge in the art.

[0030] Furthermore, the features, operations, or characteristics described in the specification can be combined in any suitable manner to form various embodiments. At the same time, the steps or actions in the method description can be rearranged or adjusted in a manner obvious to those skilled in the art. Therefore, the various orders in the specification and drawings are only for the clear description of a particular embodiment and do not imply a necessary order, unless otherwise stated that a particular order must be followed.

[0031] The serial numbers assigned to components in this document, such as "first" and "second," are used only to distinguish the objects being described and have no sequential or technical meaning. The terms "connection" and "linkage" used in this application, unless otherwise specified, include direct connection, indirect connection, and contact connection (linkage).

[0032] The embodiments described in the detailed implementation can be combined in any suitable manner without contradiction. For example, different implementation methods can be formed by combining different embodiments. In order to avoid unnecessary repetition, the various possible combinations of the embodiments will not be described separately.

[0033] To address the problem of poor gas distribution uniformity in current spray devices, this application employs a combination of a first gas distribution disk and a second gas distribution disk to form at least two layers of gas distribution structure. By utilizing the staggered design of the first and second spray holes, uniform gas distribution in the center and edge regions is achieved.

[0034] Please refer to Figure 1 The semiconductor processing apparatus includes a reaction chamber 1 and a gas spraying assembly 2, the gas spraying assembly 2 being used to supply gas to the reaction chamber 1. In one embodiment, please refer to... Figure 1 The gas spray assembly 2 is located at the top of the reaction chamber 1. In one embodiment, please refer to... Figure 1 The reaction chamber 2 contains a support 3 for supporting the wafer. In one embodiment, the wafer on the support 3 can be coated and etched using a semiconductor processing device.

[0035] Please refer to Figures 1 to 7 The gas spray assembly 2 includes an air inlet cover 21, a first gas distribution plate 22, and a second gas distribution plate 23. The air inlet cover 21 has an air inlet hole 211 for gas to enter. The first gas distribution plate 22 has at least two first spray holes 221 for gas to pass through. The second gas distribution plate 23 has at least two second spray holes 231.

[0036] In the thickness direction of the first gas equalization disk 22, the first gas equalization disk 22 is located between the second gas equalization disk 23 and the air inlet cover 21, that is, in the airflow direction, the first gas equalization disk 22 is upstream of the second gas equalization disk 23. The side of the first gas equalization disk 22 facing away from the second gas equalization disk 23 has a first gas gap 24, and the side facing the second gas equalization disk 23 has a second gas gap 25, which is located between the first gas equalization disk 22 and the second gas equalization disk 23. The first gas gap 24 connects the air inlet 211 to each of the first nozzles 221, and the second gas gap 25 connects each of the first nozzles 221 to each of the second nozzles 231. The projections of each first nozzle 221 onto the second gas equalization disk 23 along the thickness direction of the first gas equalization disk 22 are all offset from the second nozzles 231.

[0037] The first gas gap 24 is connected to the air inlet 211. Gas enters through the air inlet 211 and then enters the first gas gap 24, and then enters the first nozzle 221 of the first gas equalization disk 22. The first nozzle 221 is connected to the second gas gap 25, allowing gas to enter the second gas gap 25 from the first gas gap 24 through the first nozzle 221. Because the first nozzle 221 and the second nozzle 231 are staggered, after the gas enters the second gas gap 25, it flows further in the direction perpendicular to the thickness of the first gas equalization disk 22, improving the lateral diffusion effect of the gas, increasing the gas flow rate in the edge area, and making the gas distribution in the second gas gap 25 more uniform. Under the combined action of the first gas equalization disk 22 and the second gas equalization disk 23, precise gas flow control can be achieved, resulting in better uniformity of the gas sprayed by the gas spray assembly 2.

[0038] In one embodiment, please refer to Figure 1 The second gas distribution plate 23 is an exposed plate in the reaction chamber 1, and the second nozzle 231 is used to inject gas into the reaction chamber 1. Gas in the second gas gap 25 enters the reaction chamber 1 of the semiconductor processing equipment directly after passing through the second nozzle 231. In one embodiment, please refer to... Figure 1 , Figure 3 and Figure 7 The second nozzle 231 adopts a variable cross-section structure. For details, please refer to... Figure 7 The second nozzle 231 with a variable cross-section structure can be a conical orifice, with its diameter gradually increasing from near the first gas equalization disk 22 to away from it. Alternatively, the second nozzle 231 with a variable cross-section structure can be a stepped orifice, having one or at least two steps within it, with the opening of the second nozzle 231 facing the first gas equalization disk 22 being smaller than the opening facing away from it.

[0039] According to fluid mechanics theory, the variable cross-section structure of the second nozzle 231 can adjust the gas flow path, thereby reducing the formation of large-scale turbulence, lowering the velocity of turbulent cascading, and enhancing the uniform distribution of gas. This structure of the second nozzle 231 enables precise control of turbulence intensity, slows down the turbulent cascading process, reduces turbulence intensity and instability, and allows for a more stable gas distribution throughout the reactor. This helps maintain particle density stability during the reaction process, improving process stability and reliability.

[0040] By staggering the second nozzle 231 from the first nozzle 221 and designing the second nozzle 231 with a variable cross-section, the gas spray assembly 2 can maintain efficient gas distribution uniformity in a large-area reactor, solving the problem of uneven gas velocity and flow rate in large-area applications in traditional technologies, thereby helping to meet the higher requirements for uniformity and precision in semiconductor large-size wafer processing.

[0041] Of course, in some other embodiments, the second gas equalization disk 23 may also be located within the gas spray assembly 2, which includes a third gas equalization disk located on the side of the second gas equalization disk 23 facing away from the first gas equalization disk 22, and the third gas equalization disk is an exposed disk. In some other embodiments, the gas spray assembly 2 may also include a fourth gas equalization disk located on the side of the first gas equalization disk 22 facing away from the second gas equalization disk 23, and the arrangement of the fourth nozzle on the fourth gas equalization disk and the first nozzle 221 of the first gas equalization disk 22 can be designed based on the arrangement of the first nozzle 221 and the second nozzle 231.

[0042] Of course, in one embodiment, please refer to Figure 1 The gas spray assembly 2 has only two gas equalization disks. By controlling the airflow using only the first gas equalization disk 22 and the second gas equalization disk 23, the resistance to the airflow can be reduced, and the structure of the gas spray assembly 2 can be simplified.

[0043] Regarding the arrangement of the first nozzle 221, in one embodiment, to address the issue of large flow differences between the central and edge regions, please refer to... Figures 2 to 4 The flow area of ​​the first nozzle 221 closer to the center of the first gas equalization disk 22 is smaller than that of the first nozzle 221 farther from the center of the first gas equalization disk 22; that is, the closer the first nozzle 221 is to the center of the first gas equalization disk 22, the smaller its flow area, and the farther away from the center of the first gas equalization disk 22, the larger its flow area. The high resistance and reduced flow velocity of the small orifice suppress the gas flow in the central region, while the reduced resistance and increased gas flow in the edge region by the large orifice reduces the resistance in the edge region. Thus, the first gas equalization disk 22 can reduce the gas flow in the central region and increase the flow in the edge region. This design helps to reduce the gas velocity in the central region before the gas enters the second gas equalization disk 23, thereby achieving initial homogenization.

[0044] Of course, in some other embodiments, as an alternative, the flow area of ​​the first nozzle 221 near the center of the first air distribution plate 22 can also be equal to the flow area of ​​the first nozzle 221 far from the center of the first air distribution plate 22. Alternatively, in some other embodiments, a portion of the flow area of ​​the first nozzle 221 near the center of the first air distribution plate 22 can be equal to a portion of the flow area of ​​the first nozzle 221 far from the center of the first air distribution plate 22, and another portion of the flow area of ​​the first nozzle 221 near the center of the first air distribution plate 22 can be smaller than a portion of the flow area of ​​the first nozzle 221 far from the center of the first air distribution plate 22.

[0045] It should be noted that, in this application, the flow area refers to the cross-sectional area perpendicular to the flow direction when the fluid is flowing.

[0046] In one embodiment, please refer to Figures 2 to 4The first nozzle 221 is an elongated orifice. For some application scenarios, please refer to... Figures 2 to 4 The first nozzle 221 is an arc-shaped nozzle, and the first nozzle 221 is arranged in layers from the center of the first air distribution plate 22 to the edge of the first air distribution plate 22, and a first nozzle interval is formed between two adjacent layers of first nozzles 221.

[0047] In one embodiment, please refer to Figure 3 and Figure 4 The first air distribution plate 22 includes at least two concentric rings 222 and connecting ribs 223 connecting adjacent concentric rings 222. A first nozzle 221 is located between two adjacent concentric rings 222. The first nozzle 221 is formed by the two adjacent concentric rings 222 and the connecting ribs 223 between them, with the nozzle spacing being a portion of the concentric rings 222. The distribution of first nozzles 221 in the concentric rings 222 allows for finer flow control in the center and edge regions. In some other embodiments, the first nozzle 221 can be spiral, rectangular, or irregularly elongated, in addition to being arc-shaped.

[0048] In some other embodiments, the first nozzle 221 may be a round hole, an elliptical hole, or other irregular shaped holes, in addition to being an elongated hole.

[0049] In one application scenario, please refer to Figures 2 to 4 The width of the first nozzle 221 near the center of the first air distribution plate 22 is smaller than the width of the first nozzle 221 away from the center of the first air distribution plate 22. The first nozzle 221 includes a first hole wall 2211 and a second hole wall 2212, both of which are arc-shaped. The first hole wall 2211 faces the center of the first air distribution plate 22, and the second hole wall 2212 faces away from the center of the first air distribution plate 22. The width of the first nozzle 221 refers to the shortest distance between the first hole wall 2211 and the second hole wall 2212.

[0050] In one application scenario, please refer to Figure 4 The central angles corresponding to each of the first nozzles 221 are the same. In one embodiment, please refer to... Figure 4 The central angle corresponding to the first nozzle 221 is 90 degrees, and the four first nozzles 221 are located in the same layer. Clearly, the length of the first nozzle 221 in the outer layer is greater than the length of the first nozzle 221 in the inner layer. In the thickness direction of the second air distribution plate 23, the end of the second nozzle 231 facing the first air distribution plate 22 is directly opposite the first nozzle spacing between the two layers of first nozzles 221. The projection of the first nozzle spacing onto the second air distribution plate 23 along the thickness direction of the second air distribution plate 23 covers the second nozzle 231.

[0051] In one embodiment, the first nozzles 221 are distributed in a grid pattern. Compared with the first nozzles 221 arranged in a concentric ring pattern, the grid pattern can effectively improve the lateral uniformity of the gas.

[0052] For ease of arrangement of the second nozzle 231, in one embodiment, please refer to... Figure 5 and Figure 6 The second nozzles 231 are also arranged in layers. Specifically, multiple second nozzles 231 form a second nozzle group, and each second nozzle 231 in the second nozzle group is arranged in a ring around the center of the second air distribution disk 23. In one embodiment, the projection of the concentric ring 222 along the axial direction of the concentric ring 222 onto the second air distribution disk 23 covers the annular area where the second nozzle group is located. A second nozzle interval is formed between adjacent second nozzle groups, and the projection of the second nozzle interval along the thickness direction of the second air distribution disk 23 onto the first air distribution disk 22 covers the first nozzle 221.

[0053] When the first nozzle 221 is an elongated orifice, in addition to arranging the first nozzles 221 in layers and having the width of the inner first nozzle 221 smaller than the width of the outer first nozzle 221, in some other embodiments, the first nozzle 221 can also extend from the center of the first air distribution plate 22 towards its edge. In this case, the first nozzle 221 can extend in a spiral, a straight line, or other irregular curved lines. To improve the problem of large flow differences between the central and edge regions, the flow area per unit length of the first nozzle 221 can vary. Let the flow area per unit length in the first nozzle 221 be S. The S in the first nozzle 221 closer to the center of the first air distribution plate 22 is smaller than the S in the first air distribution plate 22 farther away. That is, the closer the first nozzle 221 is to the center of the first air distribution plate 22, the smaller the flow area S per unit length. Of course, in some other embodiments, the S in the first nozzle 221 closer to the center of the first air distribution plate 22 can also be equal to the S in the first air distribution plate 22 farther away. In some other embodiments, the following conditions may also be met in a certain section of the first nozzle 221: the S value of the first nozzle 221 near the center of the first air distribution disk 22 is equal to the S value of the first air distribution disk 22 away from the center of the first air distribution disk 22; and in another section of the first nozzle 221: the S value of the first nozzle 221 near the center of the first air distribution disk 22 is less than the S value of the first air distribution disk 22 away from the center of the first air distribution disk 22.

[0054] It should be noted that, unless otherwise specified, the length direction of the elongated hole described in this application refers to the direction of extension of the waist length of the elongated hole. For example, the length direction of the arc-shaped hole corresponds to the direction of extension of the arc length, while the depth direction of the elongated hole is consistent with the thickness direction of the gas distribution plate.

[0055] In one embodiment, please refer to Figure 3 and Figure 5To mitigate the large flow rate difference between the central and peripheral regions, the flow area of ​​the second nozzle 231 closer to the center of the second gas equalization disk 23 is smaller than that of the second nozzle 231 farther from the center. In other words, the closer the second nozzle 231 is to the center of the second gas equalization disk 23, the smaller its flow area; and the farther away it is from the center, the larger its flow area. The small orifice generates high resistance and reduces flow velocity, thus suppressing the gas flow rate in the central region. Simultaneously, the large orifice reduces resistance in the peripheral region, increasing the gas flow rate at the edge. This allows the second gas equalization disk 23 to reduce the gas flow rate in the central region and increase the flow rate in the peripheral region. In some other embodiments, besides the above arrangement, as an alternative, the flow area of ​​the second nozzle 231 closer to the center of the second gas equalization disk 23 can also be equal to the flow area of ​​the second nozzle 231 farther from the center. In some other embodiments, the flow area of ​​the second nozzle 231 that is partially close to the center of the second air distribution plate 23 is equal to the flow area of ​​the second nozzle 231 that is partially far from the center of the second air distribution plate 23, and there is also a portion of the flow area of ​​the second nozzle 231 that is close to the center of the second air distribution plate 23 that is smaller than the flow area of ​​the second nozzle 231 that is partially far from the center of the second air distribution plate 23.

[0056] In some other embodiments, based on a similar concept to the first nozzle 221, the second nozzle 231 can also be an elongated orifice, a rectangular orifice, or a spiral orifice. When the second nozzle 231 is an elongated orifice, it can extend from the middle of the second gas distribution disk 23 towards its edge. In the length direction of the second nozzle 231, the flow area per unit length is s. The s of the second nozzle 231 closer to the center of the second gas distribution disk 23 is smaller than the s of the second nozzle 23 further away from the center. That is, the closer the second nozzle 231 is to the center of the second gas distribution disk 23, the smaller the flow area s per unit length. Of course, in some other embodiments, the s of the second nozzle 231 closer to the center of the second gas distribution disk 23 can also be equal to the s of the second nozzle 23 further away from the center. In some other embodiments, the following conditions may also be met in a certain segment of the second nozzle 231: the s of the second nozzle 231 near the center of the second air distribution disk 23 is equal to the s of the second air distribution disk 23 away from the center of the second air distribution disk 23; and in another segment of the second nozzle 231: the s of the second nozzle 231 near the center of the second air distribution disk 23 is less than the s of the second air distribution disk 23 away from the center of the second air distribution disk 23.

[0057] In one embodiment, please refer to Figure 5 The flow area of ​​the second nozzle 231 located in the middle of the second air distribution disk 23 is smaller than that of the second nozzle 231 located at the edge of the second air distribution disk 23. In one embodiment, please refer to... Figure 4The flow area of ​​the first nozzle 221 located in the middle of the first air distribution plate 22 is smaller than that of the first nozzle 221 located at the edge of the first air distribution plate 22. Of course, in one embodiment, please refer to... Figure 3 and Figure 6 The flow area of ​​the second nozzle 231 located in the middle of the second air distribution plate 23 is smaller than that of the second nozzle 231 located at the edge of the second air distribution plate 23. Furthermore, the flow area of ​​the first nozzle 221 located in the middle of the first air distribution plate 22 is smaller than that of the first nozzle 221 located at the edge of the first air distribution plate 22.

[0058] To reduce the overall flow resistance of the first gas distribution disk 22 to the gas, in one embodiment, please refer to... Figure 3 and Figure 6 The sum of the flow areas of the first nozzles 221 on the first gas equalization disk 22 is greater than the sum of the flow areas of the second nozzles 231 on the second gas equalization disk 23. This allows the first gas equalization disk 22 to achieve uniform gas distribution while also reducing the resistance of the first gas equalization disk 22 to the airflow. In one embodiment, please refer to... Figure 3 and Figure 6 The flow area of ​​the first nozzle 221 is greater than that of the second nozzle 231. In some other embodiments, the flow area of ​​some of the first nozzles 221 may be smaller than that of the second nozzle 231, while the flow area of ​​some of the first nozzles 221 may be greater than that of the second nozzle 231.

[0059] Regarding the size of the second gas gap 25, in one embodiment, please refer to... Figure 1 The size of the second gas interval 25 is between 0.5 mm and 10 mm. Within this range, the second gas interval 25 provides effective gas distribution, ensuring that the gas is fully mixed and evenly distributed to the second gas distribution disk 23. Specifically, in one embodiment, the size of the second gas interval 25 can be 0.5 mm, 1 mm, 2 mm, 3 mm, 4 mm, 5 mm, 6 mm, 7 mm, 8 mm, 9 mm, or 10 mm. In some other embodiments, the size of the second gas interval 25 can be increased or decreased as needed.

[0060] In one embodiment, please refer to Figure 1The second gas spacing 25 is 3mm to 5mm. This range is determined by comprehensively considering relevant gas parameters. Too small a spacing restricts gas flow space, increasing flow resistance in the central region and affecting gas flow distribution in the edge regions; too large a spacing may cause uncontrolled gas flow, resulting in uneven distribution and affecting process accuracy. A spacing within the optimal range of 3mm to 5mm creates a uniform buffer zone between the baffle and distribution plates, effectively slowing down gas flow in the central region while enhancing gas flow in the edge regions, thus achieving overall uniform gas distribution.

[0061] In one embodiment, please refer to Figure 1 and Figure 3 The air inlet cover 21 has a first gas equalization plate step 212 and a second gas equalization plate step 213. After the air inlet cover 21, the first gas equalization plate 22, and the second gas equalization plate 23 are installed, the first gas equalization plate 22 is fixed on the first gas equalization plate step 212, and the second gas equalization plate 23 is fixed on the second gas equalization plate step 213. In some embodiments, the reaction chamber 1 has a reaction chamber shell 11. The first gas equalization plate 22, the second gas equalization plate 23, the air inlet cover 21, and the reaction chamber shell 11 can be fixed together in various feasible ways. For example, they can be fixed by screws passing through the air inlet cover 21, the first gas equalization plate 22, and the second gas equalization plate 23 and then screwing them into the reaction chamber shell 11; or, for example, the first gas equalization plate 22, the second gas equalization plate 23, and the air inlet cover 21 can be fixed together by bolts, snap-fit, adhesive, or interference fit, and then the whole assembly is fixed to the reaction chamber shell 11. Alternatively, the first gas equalization plate 22 and the second gas equalization plate 23 can be fixed together, and then the whole assembly is fixed to the air inlet cover 21.

[0062] In one embodiment, in order to facilitate control of the size of the second gas gap 25 between the second gas equalization disk 23 and the first gas equalization disk 22, a gasket (not shown in the figure) or a positioning post (not shown in the figure) is provided between the first gas equalization disk 22 and the second gas equalization disk 23 to position the distance between them.

[0063] The connection structure between the first gas distribution disk 22 and the second gas distribution disk 23 is simple and the manufacturing process is relatively easy. Compared with the complex multi-layer turbulence structure in the prior art, the gas spraying component 2 of this application achieves uniform gas distribution while maintaining relatively low manufacturing cost and structural complexity.

[0064] Regarding the location of the air inlet 211, in one embodiment, please refer to... Figures 1 to 3The air inlet 211 is located in the middle of the air inlet cover 21. This allows the gas to enter the first gas gap 24 and be positioned in the center of the first gas gap 24, which facilitates the gas to disperse in all directions and pass more evenly through the first gas distribution plate 22. Specifically, in one embodiment, there is one air inlet 211. In other embodiments, there may be multiple air inlets 211, which can be evenly arranged on the air inlet cover 21.

[0065] Regarding the materials of the first gas equalization disk 22 and the second gas equalization disk 23, in one embodiment, both the first gas equalization disk 22 and the second gas equalization disk 23 are metal disks. In some other embodiments, the first gas equalization disk 22 and the second gas equalization disk 23 may also be ceramic disks, quartz disks, heat-resistant polymer disks, or disks made of other heat-resistant materials.

[0066] In one embodiment, please refer to Figures 1 to 3 The gas distribution process in gas spray assembly 2 is as follows:

[0067] Gas inflow: The reaction gas enters from the inlet cover 21 and first enters the first gas compartment 24.

[0068] Preliminary homogenization: As the gas passes through the first nozzle 221 of the first gas equalization disk 22, the high flow velocity in the central region is slowed down by the smaller nozzle diameter, thus achieving preliminary homogenization of the gas.

[0069] Secondary homogenization and regulation: Gas enters the second gas distribution disk 23 and is further distributed through the second nozzles 231, which are staggered with the first nozzles 221. The larger diameter of the edge nozzles enhances the flow rate in the edge region. The variable cross-section structure of the second nozzles 231 gradually reduces turbulence and smooths the flow as the gas passes through the second gas distribution disk 23.

[0070] Uniform distribution: The gas eventually flows out from the second nozzle 231 and enters the reaction chamber 1, improving the uniformity and stability of the reaction.

[0071] In summary, the synergistic effect of the layered first gas distribution disk 22 and the second gas distribution disk 23 achieves a layer-by-layer uniform gas distribution. The staggered design of the first nozzle 221 and the second nozzle 231 increases the lateral diffusion capability of the gas and improves the uniformity of gas distribution in the gas spray assembly 2. By making the flow area of ​​the edge nozzles larger than that of the central nozzles, and by utilizing precise control of fluid resistance, the gas flow rate in the central region is reduced while the flow rate in the edge region is increased, resulting in a more uniform gas distribution entering the reaction chamber 1. This design effectively solves the problem of gas concentration in the central region in existing gas spray assemblies 2, and can maintain stable reaction conditions during large-area reaction processes, significantly improving the performance of etching and deposition processes and enhancing the uniformity and consistency of processing.

[0072] In one embodiment, by carefully designing the nozzle size, the staggered design of the first nozzle 221 and the second nozzle 231, and the variable cross-section structure of the second nozzle 231, the flow path and velocity of the gas can be effectively controlled, turbulent instability can be reduced, and the stability of the gas can be improved.

[0073] In one embodiment of a gas spraying assembly, the gas spraying assembly may be the gas spraying assembly described in any of the above embodiments.

[0074] The above examples illustrate this application only to aid understanding and are not intended to limit its scope. Those skilled in the art to which this application pertains can make various simple deductions, modifications, or substitutions based on the ideas presented.

Claims

1. A gas spray assembly, the gas spray assembly being used in a semiconductor processing device, characterized in that, include: An air intake cover having an air intake hole for gas to enter; A first air distribution plate, the first air distribution plate having at least two first spray holes; And a second air distribution disk, the second air distribution disk having at least two second spray holes; The first gas equalization disk and the second gas equalization disk are arranged along the thickness direction of the first gas equalization disk, with the first gas equalization disk located on the side of the second gas equalization disk facing the air inlet. The side of the first gas equalization disk facing away from the second gas equalization disk has a first gas gap, which connects the air inlet and each of the first nozzles. The side of the first gas equalization disk facing the second gas equalization disk has a second gas gap, which connects each of the first nozzles and each of the second nozzles. The projections of each of the first nozzles along the thickness direction of the first gas equalization disk onto the second gas equalization disk are all offset from the second nozzles.

2. The gas spray assembly as described in claim 1, characterized in that, The flow area of ​​the first nozzle near the center of the first gas equalization plate is less than or equal to the flow area of ​​the first nozzle far from the center of the first gas equalization plate; and / or the first nozzle is an elongated hole, and the flow area per unit length of the first nozzle is S in the length direction of the first nozzle, and the S of the first nozzle near the center of the first gas equalization plate is less than or equal to the S of the first nozzle far from the center of the first gas equalization plate.

3. The gas spray assembly as described in claim 1, characterized in that, The flow area of ​​the second nozzle near the center of the second gas distribution plate is less than or equal to the flow area of ​​the second nozzle far from the center of the second gas distribution plate, and / or the second nozzle is an elongated orifice, and the flow area per unit length in the second nozzle is s in the length direction of the second nozzle, and the s of the second nozzle near the center of the second gas distribution plate is less than or equal to the s of the second nozzle far from the center of the second gas distribution plate.

4. The gas spray assembly as described in claim 1, characterized in that, The flow area of ​​the first nozzle located in the middle of the first air distribution plate is smaller than that of the first nozzle located at the edge of the first air distribution plate, and / or the flow area of ​​the second nozzle located in the middle of the second air distribution plate is smaller than that of the second nozzle located at the edge of the second air distribution plate.

5. The gas spray assembly as described in any one of claims 1-4, characterized in that, The sum of the flow areas of each first nozzle on the first air distribution plate is greater than the sum of the flow areas of each second nozzle on the second air distribution plate.

6. The gas spray assembly as described in any one of claims 1-4, characterized in that, The second gas distribution plate is an exposed plate for being exposed in the reaction chamber of the semiconductor processing equipment, and the second nozzle is used to inject gas into the reaction chamber.

7. The gas spray assembly as described in claim 6, characterized in that, The diameter of the second nozzle gradually increases from the direction close to the first air distribution plate to the direction away from the first air distribution plate, or the second nozzle is a stepped nozzle, and the opening of the second nozzle facing the first air distribution plate is smaller than the opening facing away from the first air distribution plate.

8. The gas spray assembly as described in any one of claims 1-4, characterized in that, The first air distribution plate includes at least two concentric rings and connecting ribs connecting two adjacent concentric rings. The first nozzle is located between two adjacent concentric rings. A plurality of second nozzles form a second nozzle group. Each second nozzle in the second nozzle group is arranged in a ring. The projection of the concentric rings along the axial direction of the concentric rings on the second air distribution plate covers the ring area where the second nozzle group is located.

9. The gas spray assembly as described in any one of claims 1-4, characterized in that, The second gas gap is 0.5 mm to 3 mm, 3 mm to 5 mm, or 5 mm to 10 mm in the thickness direction of the first gas distribution plate.

10. A semiconductor processing apparatus, characterized in that, It includes a reaction chamber and a gas spray assembly as described in any one of claims 1-9, the gas spray assembly being used to supply gas to the reaction chamber.

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