Wafer taking tool
By combining the guide section and the wafer picking component, and using the crossbeam plate to separate from the dielectric layer, the problems of wafer damage and poor stability caused by molybdenum wafer tooling are solved, and wafer picking with high stability and high yield is achieved.
Patent Information
- Application Number
- CN202520210160.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-02-11
- Publication Date
- 2025-12-09
- Estimated Expiration
- 2035-02-11
AI Technical Summary
In the existing technology, molybdenum wafer tooling is prone to causing surface damage and poor stability of wafers during the wafer removal process, resulting in reduced process stability and yield.
It adopts a combination structure of guide section and wafer picker, uses crossbeam plate to separate from dielectric layer to avoid direct contact with wafer, and uses high-performance polypropylene material to ensure the stability and durability of wafer picker.
It improves the stability and yield of wafer picking, reduces the risk of wafer damage, extends the service life of tooling, and reduces production costs.
Smart Images
Figure CN223651396U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor equipment technology, and in particular to a wafer pick-up tool. Background Technology
[0002] In semiconductor etching processes, thermal pads are typically used to mount the wafer onto a graphite disk; after the etching process is complete, the wafer is removed from the graphite disk using a molybdenum wafer fixture.
[0003] Molybdenum sheets have a high melting point, high conductivity, and good chemical stability. However, during the wafer removal process, the molybdenum sheets may come into contact with the wafer, causing damage and scratches on the wafer surface. At the same time, the stability of the molybdenum sheet tooling during removal is poor, resulting in uneven stress on the wafer and cracks, which greatly reduces the overall process stability and yield.
[0004] Therefore, in view of the above-mentioned technical problems, how to improve the stability and yield rate of wafer picking is a technical problem that needs to be solved by those skilled in the art. Utility Model Content
[0005] The purpose of this application is to provide a wafer picking fixture that avoids direct contact with the wafer, makes the force on the wafer more uniform during picking, and improves the stability and yield of wafer picking.
[0006] To achieve the above objectives, this application provides a wafer pick-up fixture, including a guide portion disposed on a graphite workpiece and a pick-up component cooperating with the guide portion. A dielectric layer is attached to a first surface of the graphite workpiece, and a wafer is attached to the side of the dielectric layer opposite to the first surface. The pick-up component includes a crossbeam, which is attached to the first surface and moves toward the dielectric layer along the guiding direction of the guide portion. The crossbeam can pass between the dielectric layer and the first surface to separate the dielectric layer from the first surface.
[0007] Preferably, the guide portion includes a guide groove formed on the graphite workpiece, and the sheet-taking component further includes a guide block disposed in the guide groove. The guide block slides along the length direction of the guide groove, and the crossbeam sheet is fixedly connected to the guide block.
[0008] Preferably, the guide grooves are symmetrically arranged on both sides of the wafer or the dielectric layer, the two guide grooves are arranged in parallel, and the two guide blocks that cooperate with the two guide grooves are connected to the crossbeam plate.
[0009] Preferably, the guide groove is a rectangular groove, and the guide block is a rectangular block that mates with the rectangular groove.
[0010] Preferably, the guide block extends in a direction away from the guide groove, and after extending a preset length, the extended sides of the two guide blocks are integrally connected to form a pushing part protruding from the first surface.
[0011] Preferably, the guide groove is a through groove that penetrates the graphite workpiece, and the medium layer is a heat transfer medium layer.
[0012] Preferably, the side of the crossbeam facing the medium layer has a cutting side that separates the medium layer from the first surface, and the length of the cutting side at least covers the length of the medium layer in the direction of movement of the crossbeam.
[0013] Preferably, the crossbeam is a rectangular sheet structure, the cut-in side is a rectangular side of the crossbeam, and the rectangular side where the cut-in side is located is parallel to the side of the wafer.
[0014] Preferably, the thickness of the crossbeam piece at any position is 0.01 mm.
[0015] Preferably, the thickness of the cut-in side is 0.01 mm, and the thickness of the crossbeam gradually increases from the cut-in side to the side of the crossbeam away from the dielectric layer, so that the surface of the crossbeam away from the first surface forms a smooth inclined surface, and the maximum thickness of the crossbeam is not greater than the thickness of the dielectric layer.
[0016] Compared to the aforementioned background technology, this application uses a crossbeam on the wafer picker to separate the dielectric layer from the graphite workpiece, preventing the wafer picker from directly contacting the wafer and avoiding damage or scratches on the wafer surface. Simultaneously, the guide section, in cooperation with the wafer picker, allows the crossbeam on the wafer picker to move stably along a preset path. Furthermore, the wafer picker can be made of high-performance polypropylene (PP) material, ensuring stability and durability during use. This guarantees high stability during wafer pickering, preventing uneven stress on the wafer and improving stability and yield during wafer pickering. Attached Figure Description
[0017] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of this application. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.
[0018] Figure 1 This is a schematic diagram of the mating structure between the wafer picking tool and the graphite workpiece provided in the embodiments of this application;
[0019] Figure 2This is a schematic diagram of the guide groove structure provided in an embodiment of this application;
[0020] Figure 3 This is a cross-sectional view of a graphite workpiece provided in an embodiment of this application;
[0021] Figure 4 This is a schematic diagram of the front structure of the chip-removing component provided in the embodiments of this application;
[0022] Figure 5 This is a cross-sectional view of another embodiment of the crossbeam provided in this application.
[0023] In the diagram: 1-Graphite workpiece; 11-Guide groove;
[0024] 2-Piece taking part; 21-Crossbeam piece; 22-Guide block; 23-Pushing part;
[0025] 3-Wafer;
[0026] 4-Dielectric layer. Detailed Implementation
[0027] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.
[0028] It should be noted that in this embodiment, the orientation or positional relationship indicated by terms such as "upper," "lower," "front," and "rear" is based on the orientation or positional relationship shown in the accompanying drawings. It is used only for the convenience of describing this application and for simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, it should not be construed as a limitation of this application. Furthermore, "first," "second," "third," and "fourth" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.
[0029] To enable those skilled in the art to better understand the present application, the present application will be further described in detail below with reference to the accompanying drawings and specific embodiments.
[0030] like Figure 1 As shown, in this embodiment, a wafer pick-up fixture is provided. The fixture includes a guide portion disposed on a graphite workpiece 1 and a pick-up component 2 cooperating with the guide portion. The graphite workpiece 1 can be a graphite disk, which can be used to support the wafer 3 during the etching process. Graphite, as a material, not only has good thermal conductivity and high-temperature resistance, but also effectively reduces deformation under high-temperature environments, thereby ensuring the stability of the production process; please refer to... Figure 1 and Figure 2 A dielectric layer 4 is attached to the first surface of the graphite workpiece 1. The dielectric layer 4 is usually a heat transfer medium layer. A wafer 3 is attached to the side of the dielectric layer 4 away from the first surface of the graphite workpiece 1, so that heat is conducted to the graphite workpiece 1 through the dielectric layer.
[0031] Typically, during the etching process, a dielectric layer 4 is used to mount the wafer 3 onto the graphite workpiece 1, and the wafer 3 is removed from the graphite workpiece 1 after etching is complete. In actual production, to ensure that the wafer 3 is placed stably and not easily moved, a dielectric layer 4 is attached to the center of the graphite workpiece 1. The use of the dielectric layer 4 can effectively reduce the impact of thermal expansion and contraction of the wafer 3 during placement and removal, thereby preventing the wafer 3 from shifting and ensuring accurate positioning in subsequent processing steps.
[0032] The wafer picker 2 includes a crossbeam 21, which can be attached to the first surface of the graphite workpiece 1. That is, the crossbeam 21 and the dielectric layer 4 or the wafer 3 are located on the same side of the graphite workpiece 1. Under the action of the guide, the wafer picker 2 can move towards the dielectric layer 4 along a preset guide direction. Then the crossbeam 21 will also move towards the dielectric layer 4 under the guide. When the crossbeam 21 moves to contact the dielectric layer 4, the sheet-like structure of the crossbeam 21 can gradually cut into the contact surface between the dielectric layer 4 and the graphite workpiece 1. Thus, after the crossbeam 21 moves a certain distance, the crossbeam 21 can penetrate between the dielectric layer 4 and the first surface, thereby separating the dielectric layer 4 from the first surface. And with the continuous movement of the crossbeam 21, the dielectric layer 4 can be completely separated from the first surface. At this time, the dielectric layer 4 and the wafer 3 can be removed together.
[0033] In summary, this application uses the crossbeam 21 on the wafer picker 2 to separate the dielectric layer 4 from the graphite workpiece 1, preventing the wafer picker 2 from directly contacting the wafer 3 and avoiding damage or scratches on the surface of the wafer 3. At the same time, the crossbeam 21 on the wafer picker 2 can move stably along a preset path by utilizing the cooperation between the guide and the wafer picker 2. The wafer picker 2 can be made of high-performance polypropylene (PP) material to ensure stability and durability during use, thereby ensuring high stability of the wafer picker 2 during wafer picking and preventing uneven stress on the wafer 3, thus improving the stability and yield rate when picking wafers from the wafer 3.
[0034] In some embodiments, the sheet-retrieving component 2 may be made of high-performance polypropylene (PP) material to ensure its stability and durability during the production process; at the same time, polypropylene material has excellent chemical resistance and impact resistance, so that the sheet-retrieving component 2 can maintain good performance during repeated use, which not only improves the service life of the tooling, but also reduces the cost of production for enterprises.
[0035] The guide section can be provided by means of guide groove 11, that is, guide groove 11 is formed on graphite workpiece 1. Please refer to [reference needed]. Figure 1 and Figure 2 The pick-up piece 2 includes a guide block 22 disposed in the guide groove 11. The guide block 22 can slide along the length direction of the guide groove 11. The crossbeam piece 21 is fixedly connected to the guide block 22, so that the pick-up piece 2 and the crossbeam piece 21 on the pick-up piece 2 move along a preset guide path.
[0036] It should be noted that since the crossbeam 21 is also attached to the first surface, and also remains attached to the first surface during the movement of the pick-up piece 2 toward the medium layer 4, the crossbeam 21 can also serve as a support structure for the pick-up piece 2 to a certain extent, so that the graphite workpiece 1 provides stable support for the pick-up piece 2.
[0037] In some embodiments, to improve the stable guiding effect of the guide section, the guide grooves 11 can be symmetrically arranged on both sides of the wafer 3 or the dielectric layer 4. Specifically, two guide grooves 11 are formed at the central symmetrical position of the graphite workpiece 1, and the two guide grooves 11 are arranged in parallel, keeping the length direction of the two guide grooves 11 consistent; the corresponding number of guide blocks 22 is also two, please refer to Figure 4 Both guide blocks 22 are connected to the crossbeam 21, so that the take-up piece 2 can slide stably along the preset guide path under the cooperation of the two guide blocks 22 and the two guide grooves 11.
[0038] Based on this, the guide block 22 and the guide groove 11 are detachably connected. When it is necessary to pick up the wafer, the two guide blocks 22 are placed into the two guide grooves 11, and the wafer picking operation of the wafer 3 is completed by the movement of the wafer picking component 2. After the dielectric layer 4 is completely separated from the first surface of the graphite workpiece 1, the wafer picking component 2 can be removed, and the dielectric layer 4 and the wafer 3 can be removed together by the crossbeam 21 to complete the wafer picking.
[0039] In some embodiments, the guide groove 11 can be a rectangular groove, please refer to Figure 2 and Figure 3 Two 10*60 mm guide grooves 11 can be opened at the center symmetrical position of the graphite workpiece 1; the corresponding guide block 22 is a rectangular block that cooperates with the rectangular groove. While not affecting the sliding of the guide block 22 along the length direction of the guide groove 11, it can prevent the guide block 22 from rotating and improve the pick-up stability of the pick-up piece 2.
[0040] Two guide blocks 22 extend in a direction away from the guide groove 11, and after extending a preset length, the extended sides of the two guide blocks 22 are integrally connected to form a pushing part 23 protruding from the first surface. It can be seen that the pushing part 23 and the two guide blocks 22 can be an integral structure. The operator can push the wafer picker 2 to move through the pushing part 23, so that the crossbeam 21 gradually penetrates between the dielectric layer 4 and the graphite workpiece 1. The dielectric layer 4 and the wafer 3 can then be easily removed from the graphite workpiece 1, greatly reducing physical contact with the wafer and reducing the risk of damage. However, when operating the pushing part 23, attention should be paid to the gentleness and accuracy of the operation.
[0041] Please refer to Figure 3 In this embodiment, the guide groove 11 is a through groove that penetrates the graphite workpiece 1. Of course, it can also be a groove structure that does not penetrate the graphite workpiece 1, as long as it has a guiding function. Of course, the guiding methods of this application include, but are not limited to, the guide groove 11 and the guide block 22, and can also be other components or structures with guiding functions, as long as they can guide the sheet-taking part 2, they all fall within the protection scope of this application.
[0042] For the guide groove 11, which adopts a groove structure that does not penetrate the graphite workpiece 1, a flat bottom and an inclined bottom can also be set at the bottom of the groove structure. The flat bottom is parallel to the first surface of the graphite workpiece 1. The bottom of the guide block 22 can contact the flat bottom and slide along the surface of the flat bottom under the support of the flat bottom. When the guide block 22 slides on the flat bottom, the crossbeam 21 slides on the first surface of the graphite workpiece 1. After the crossbeam 21 completes the separation of the dielectric layer 4 from the first surface, the guide block 22 can continue to slide towards the inclined bottom. Thus, after the bottom of the guide block 22 contacts the inclined bottom and gradually enters the inclined bottom, the crossbeam 21 gradually separates from the first surface, thereby making the wafer 3 and the dielectric layer 4 gradually move away from the first surface of the graphite workpiece 1, which is convenient for removing the wafer 3 and the dielectric layer 4.
[0043] Since the crossbeam 21 needs to penetrate between the dielectric layer 4 and the first surface, the side of the crossbeam 21 facing the dielectric layer 4 needs to have an entry side that separates the dielectric layer 4 from the first surface. This entry side should have a sufficiently small thickness to successfully separate the dielectric layer 4 from the first surface of the graphite workpiece 1. At the same time, in order to ensure that the entry side can completely separate the dielectric layer 4 from the first surface, the length of the entry side in the direction of movement of the crossbeam 21 should at least cover the length of the dielectric layer 4, so as to ensure that after the entry side penetrates between the dielectric layer 4 and the first surface, the dielectric layer 4 along the length of the entry side can be separated from the first surface. When the entry side penetrates from one side of the dielectric layer 4 and exits from the other side, the complete separation of the dielectric layer 4 from the first surface of the graphite workpiece 1 can be achieved.
[0044] In some embodiments, the crossbeam 21 can be a rectangular sheet structure; please refer to [reference needed]. Figure 1The rectangular sheet structure is relatively stable overall, and its connection with the two side guide blocks 22 is more convenient and stable. Specifically, one rectangular side of the cut-in side beam 21 is parallel to the side of the wafer 3. As the beam 21 gradually penetrates between the dielectric layer 4 and the graphite workpiece 1, this parallel arrangement of the cut-in side to the side of the wafer 3 ensures more uniform force distribution on the side of the wafer 3, preventing uneven force distribution.
[0045] In some embodiments, in order to enable the crossbeam 21 to smoothly separate the dielectric layer 4 from the first surface, the thickness of the crossbeam 21 at any position can be set to 0.01 mm, so that the crossbeam 21 as a whole has a small thickness, which facilitates the insertion and separation of the dielectric layer 4 and the graphite workpiece 1.
[0046] In other embodiments, the thickness of the cut-in side may be only 0.01 mm, and the thickness of the crossbeam 21 may gradually increase from the cut-in side to the side of the crossbeam 21 facing away from the dielectric layer 4, so that the surface of the crossbeam 21 facing away from the first surface forms a smooth inclined surface, and the maximum thickness of the crossbeam 21 is not greater than the thickness of the dielectric layer 4; since the cut-in side already has a thickness that allows the dielectric layer 4 to separate smoothly from the first surface, the thickness of other positions of the crossbeam 21 can be appropriately increased, for details please refer to Figure 5 The cross-section of the beam 21 is approximately triangular, which improves its overall strength. This design also increases the connection area between the beam 21 and the guide block 22, thereby enhancing their connection strength. The presence of the inclined surface does not affect the separation of the dielectric layer 4 from the first surface, and a certain tilt angle facilitates separation. However, the tilt angle should not be too large; the maximum thickness of the beam 21 can be set to no greater than the thickness of the dielectric layer 4 to prevent the wafer 3 from contacting the first surface of the graphite workpiece 1 due to tilting.
[0047] It should be noted that in this specification, relational terms such as first and second are used only to distinguish one entity from several other entities, and do not necessarily require or imply any such actual relationship or order between these entities.
[0048] This document uses specific examples to illustrate the principles and implementation methods of this application. The descriptions of the embodiments above are only for the purpose of helping to understand the method and core ideas of this application. It should be noted that those skilled in the art can make several improvements and modifications to this application without departing from the principles of this application, and these improvements and modifications also fall within the protection scope of the claims of this application.
Claims
1. A wafer picking fixture, characterized in that, The device includes a guide portion disposed on a graphite workpiece (1) and a wafer-retrieving member (2) cooperating with the guide portion. A dielectric layer (4) is attached to the first surface of the graphite workpiece (1). A wafer (3) is attached to the side of the dielectric layer (4) away from the first surface. The wafer-retrieving member (2) includes a crossbeam (21). The crossbeam (21) is attached to the first surface and moves toward the dielectric layer (4) along the guiding direction of the guide portion. The crossbeam (21) can pass through the dielectric layer (4) and the first surface to separate the dielectric layer (4) from the first surface.
2. The wafer pick-up fixture according to claim 1, characterized in that, The guide section includes a guide groove (11) formed on the graphite workpiece (1), and the sheet taking part (2) also includes a guide block (22) disposed in the guide groove (11). The guide block (22) slides along the length direction of the guide groove (11), and the crossbeam piece (21) is fixedly connected to the guide block (22).
3. The wafer pick-up fixture according to claim 2, characterized in that, The guide grooves (11) are symmetrically arranged on both sides of the wafer (3) or the dielectric layer (4). The two guide grooves (11) are arranged in parallel, and the two guide blocks (22) that cooperate with the two guide grooves (11) are connected to the crossbeam (21).
4. The wafer pick-up fixture according to claim 3, characterized in that, The guide groove (11) is a rectangular groove, and the guide block (22) is a rectangular block that cooperates with the rectangular groove.
5. The wafer pick-up fixture according to claim 4, characterized in that, The guide block (22) extends in a direction away from the guide groove (11), and after extending a preset length, the extended sides of the two guide blocks (22) are integrally connected to form a pushing part (23) protruding from the first surface.
6. The wafer pick-up fixture according to claim 2, characterized in that, The guide groove (11) is a through groove that penetrates the graphite workpiece (1), and the medium layer (4) is a heat transfer medium layer.
7. The wafer pick-up fixture according to any one of claims 1-6, characterized in that, The crossbeam (21) has a cutting side on the side facing the medium layer (4) that separates the medium layer (4) from the first surface. In the direction of movement of the crossbeam (21), the length of the cutting side covers at least the length of the medium layer (4).
8. The wafer pick-up fixture according to claim 7, characterized in that, The crossbeam (21) is a rectangular sheet structure, and the cut-in side is a rectangular side of the crossbeam (21), and the rectangular side where the cut-in side is located is parallel to the side of the wafer (3).
9. The wafer pick-up fixture according to claim 7, characterized in that, The thickness of the crossbeam (21) at any position is 0.01 mm.
10. The wafer pick-up fixture according to claim 7, characterized in that, The thickness of the cut-in side is 0.01 mm. From the cut-in side to the side of the crossbeam (21) away from the medium layer (4), the thickness of the crossbeam (21) gradually increases so that the surface of the crossbeam (21) away from the first surface forms a smooth inclined surface, and the maximum thickness of the crossbeam (21) is not greater than the thickness of the medium layer (4).