Laser TO packaging structure

Abstract

A laser TO packaging structure comprises a tube seat, seven pins arranged on the tube seat, an aspheric lens arranged on a tube cap, a pair of radio frequency columns arranged on the tube seat, a substrate arranged on the tube seat, a thermoelectric cooler arranged on the substrate, a thermistor and a cushion block arranged on a refrigeration surface of the thermoelectric cooler, an MPD chip arranged on the cushion block, and a first heat sink arranged on the tube seat. The first heat sink is located between the radio frequency columns, the front side of the first heat sink is provided with the second heat sink, the second heat sink is provided with the DFB chip, and the MPD chips are arranged on the cushion block, so that the spatial positions of the MPD chips are closer, and the working state of the DFB chip can be better monitored through the MPD chips. According to the utility model, the loss of optical power on an optical path is reduced, the loss of signals on a radio frequency link is reduced, and the stability of signal transmission is improved by connecting key devices through a plurality of gold wires.

Description

Technical Field

[0001] This utility model relates to the field of optical communication technology, and in particular to a laser TO packaging structure. Background Technology

[0002] TO packaging is one of the common packaging forms for semiconductor optoelectronic devices. It has a simple structure, low cost, and high reliability, and is widely used in optical communication networks.

[0003] The main packaging structure of direct modulated lasers (TO) is an aspherical waveguide design. However, the current direct modulated laser (TO) structure suffers from significant optical and signal losses, as well as poor signal transmission stability. Utility Model Content

[0004] This invention provides a laser TO packaging structure to overcome the shortcomings of the prior art, solve the problems of high optical and signal loss, and has strong practicality.

[0005] In order to achieve the purpose of this utility model, the following technology is proposed to be adopted:

[0006] A laser TO package structure includes a socket with seven pins, a non-spherical lens on the socket cap, a pair of RF pillars on the socket, a substrate on the socket, a thermoelectric cooler on the substrate, a thermistor and a pad on the cooling surface of the thermoelectric cooler, an MPD chip on the pad, a first heat sink on the socket located between the RF pillars, a second heat sink in front of the first heat sink, and a DFB chip on the second heat sink. Placing the MPD chips on the pad allows for closer spatial arrangement between the MPD chips, facilitating better monitoring of the DFB chip's operating status. The RF pillars increase the grounding resistance, thereby reducing the impact of external signals on laser operation and improving signal transmission stability.

[0007] The MPD chip is used to monitor the power and quality of the optical signal and feeds the monitored power and quality back to the control system to improve the stability of the entire laser.

[0008] Thermistors are used to sense temperature. The resistance of the thermistor changes with the temperature of the laser, while the input voltage is rated. When the resistance of the thermistor changes, its power changes. Therefore, the temperature of the laser can be monitored by the power it generates.

[0009] The DFB chip introduces a periodic refractive index modulation structure in the active region, which is usually a Bragg grating. This grating acts as a reflector, allowing only light signals of a specific wavelength to pass through, i.e., the nm light signal emitted by the DFB chip to the cap.

[0010] The DFB chip is bonded to the second heat sink via gold wire bonding;

[0011] The second heat sink is bonded to the RF pillar by two sets of gold wires;

[0012] The MPD chip is bonded to the first pin via gold wire bonding;

[0013] The spacer is bonded to the tube socket using gold wire bonding;

[0014] The substrate is bonded to the second and third pins by two sets of gold wires;

[0015] The thermistor is bonded to the fourth pin via gold wire;

[0016] The RF posts are connected to the fifth and sixth pins respectively;

[0017] The first heat sink is bonded to the RF post via gold wire bonding, and the first heat sink is also bonded to the seventh pin via gold wire bonding. In order to improve the grounding reliability of the RF post, multiple gold wires are also bonded to its upper end.

[0018] Furthermore, the lower end of the thermoelectric cooler is equipped with multiple cooling elements, the lower ends of which are in contact with the substrate. The cooling effect is enhanced by using multiple cooling elements, which utilize a PN junction composed of p-type and n-type semiconductors. Cooling is achieved by applying direct current across the PN junction, directly converting electrical energy into heat energy. Specifically, when the contact point is connected to a DC power supply, a temperature difference and heat transfer occur at the junction. That is, the current in the upper conductive layer flows from the n-type semiconductor to the p-type semiconductor, causing a temperature decrease, thus cooling the ceramic insulating body. Conversely, the current in the lower conductive layer flows from the p-type semiconductor to the n-type semiconductor, causing a temperature increase, thereby releasing heat. Because this thermoelectric cooler contains multiple p-type and n-type semiconductors, multiple cooling elements can be constructed, further improving the heat dissipation effect.

[0019] Furthermore, the pad is gold-plated on its upper side to facilitate bonding with the MPD chip via gold wire.

[0020] Furthermore, both the first and second heat sinks are made of aluminum nitride.

[0021] Furthermore, in order to ensure compatibility with the regionality of gold wires during the process operation, and to facilitate bonding to the substrate by multiple gold wires, regions A and B are provided on the outer wall of the second heat sink. Regions A and B are not conductive, and the DFB chip is connected to region B by gold wires.

[0022] Similarly, the RF pillar has regions C and D, which are not conductive. Region A is wire-bonded to region C on one of the RF pillars, and region B is wire-bonded to region C on the other RF pillar. The first heat sink is wire-bonded to region D on the RF pillar.

[0023] Furthermore, the second heat sink is bonded to the radio frequency pillar by multiple gold wires;

[0024] To improve the reliability of grounding, the substrate is bonded to the two pins with multiple gold wires.

[0025] Furthermore, to improve the reliability of grounding, the second heat sink is bonded to the RF pillar by five gold wires;

[0026] The substrate is bonded to two pins by three gold wires.

[0027] Furthermore,

[0028] The first heat sink is bonded to the radio frequency pillar by a single gold wire;

[0029] The spacer is bonded to the tube socket by a single gold wire;

[0030] The MPD chip is bonded to one of its pins using a single gold wire;

[0031] The thermistor is bonded to one of the pins by a single gold wire.

[0032] The advantages of the above technical solution are:

[0033] This invention reduces optical power loss in the optical path and signal loss in the radio frequency link, and improves signal transmission stability by connecting key components with multiple gold wires. Attached Figure Description

[0034] To make the objectives, technical solutions, and advantages of this utility model clearer, the following will provide a further detailed description of this utility model in conjunction with the accompanying drawings.

[0035] Figure 1 A three-dimensional structure of one embodiment is shown. Figure 1 .

[0036] Figure 2 A three-dimensional structure of one embodiment is shown. Figure 2 .

[0037] Figure 3 A three-dimensional structure of one embodiment is shown. Figure 3 .

[0038] Figure 4 A three-dimensional structure of one embodiment is shown. Figure 4. Detailed Implementation

[0039] like Figures 1-4 As shown, a laser TO package structure includes a socket 1 with seven pins 2, a cap 13 with an aspherical lens 130, a pair of RF pillars 11, a substrate 12, a thermoelectric cooler 3, a thermistor 4 and a pad 5 on the cooling surface of the thermoelectric cooler 3, an MPD chip 7 on the pad 5, and a first heat sink 8 located between the RF pillars 11. A second heat sink 9 is located in front of the first heat sink 8. Both the first and second heat sinks 8 are made of aluminum nitride, and a DFB chip 10 is located on the second heat sink 9. Placing the MPD chips 7 on the pad allows for closer spatial positioning between the MPD chips 7, facilitating better monitoring of the operating status of the DFB chip 10. The MPD chips 7 are used to monitor the power and quality of the optical signal and feed the monitored power and quality back to the control system to improve the overall stability of the laser. Thermistor 4 is used to sense temperature. Its resistance changes with the laser's temperature, while the input voltage remains constant. When the thermistor's resistance changes, its power changes, thus allowing for laser temperature monitoring via the generated power. The DFB chip 10 introduces a periodic refractive index modulation structure in its active region, typically a Bragg grating. This grating acts as a mirror, allowing only specific wavelengths of light to pass through; specifically, the DFB chip 10 is used to transmit a 1286nm light signal to the cap 13.

[0040] Specifically, the DFB chip 10 is wire-bonded to the second heat sink 9. The second heat sink 9 is wire-bonded to the RF post 11 via two sets of gold wires. The MPD chip 7 is wire-bonded to the first pin 2. The pad 5 is wire-bonded to the socket 1, and its upper side is gold-plated to facilitate bonding with the MPD chip 7 via gold wires. The substrate 12 is wire-bonded to the second and third pins 2 via two sets of gold wires. The thermistor 4 is wire-bonded to the fourth pin 2 via gold wires. The RF post 11 is connected to the fifth and sixth pins 2 respectively. The first heat sink 8 is wire-bonded to the RF post 11, and the first heat sink 8 is also wire-bonded to the seventh pin 2 via gold wires. To improve the grounding reliability of the RF post 11, multiple gold wires are also bonded to its upper end.

[0041] Specifically, the lower end of the thermoelectric cooler 3 is equipped with multiple cooling elements, the lower ends of which are in contact with the substrate 12. The cooling effect is improved by using multiple cooling elements, which utilize a PN junction composed of p-type and n-type semiconductors. Cooling is achieved by applying direct current across the PN junction, directly converting electrical energy into heat energy. Specifically, when the contact point is connected to a DC power supply, a temperature difference and heat transfer occur at the junction. That is, the current in the upper conductive layer flows from the n-type semiconductor to the p-type semiconductor, causing a temperature decrease, thus cooling the ceramic insulating body. Conversely, the current in the lower conductive layer flows from the p-type semiconductor to the n-type semiconductor, causing a temperature increase, thereby achieving heat dissipation. Furthermore, because this thermoelectric cooler contains multiple p-type and n-type semiconductors, multiple cooling elements can be constructed, thereby improving the heat dissipation effect.

[0042] To ensure compatibility with the regional characteristics of gold wires during process operation and to facilitate bonding to the substrate via multiple gold wires, regions A 90 and B 91 are provided on the outer wall of the second heat sink 9. Regions A 90 and B 91 are not conductive, and the DFB chip 10 is connected to region B 91 via gold wires. Regions C 110 and D 111 are provided on the RF post 11, and regions C 110 and D 111 are not conductive. Region A 90 is bonded to region C 110 on one of the RF posts 11 via gold wires, and region B 91 is bonded to region C 110 on the other RF post 11 via gold wires. The first heat sink 8 is bonded to region D 111 on the RF post 11 via gold wires.

[0043] To improve grounding reliability, the second heat sink 9 is bonded to the RF post 11 with multiple gold wires, and the substrate 12 is bonded to the two pins 2 with multiple gold wires. Alternatively, the second heat sink 9 can be bonded to the RF post 11 with five gold wires, and the substrate 12 can be bonded to the two pins 2 with three gold wires.

[0044] The first heat sink 8 is bonded to the RF post 11 via a single gold wire. The pad 5 is bonded to the socket 1 via a single gold wire. The MPD chip 7 is bonded to one of the pins 2 via a single gold wire. The thermistor 4 is bonded to one of the pins 2 via a single gold wire.

[0045] When the laser is working, pin 2 on the laser needs to be connected to the corresponding circuit. When emitting a light signal, power is supplied to the laser through pin 2, and the DFB chip 10 converts the electrical signal into a light signal, so that the DFB chip 10 inside the laser emits a 1286nm light signal, and the emitted light signal is emitted through the aspherical lens 130. Since the DFB chip 10 is very sensitive to temperature changes, in order to avoid the laser's temperature changes affecting the quality of the light signal, when the laser is powered on, the thermistor 4 simultaneously detects the temperature inside the laser and feeds the detected temperature data back to the temperature control system. The temperature control system precisely controls the temperature of the DFB chip 10 and the MPD chip 7 according to the set temperature through the thermoelectric cooler 3.

[0046] The above description is merely a preferred embodiment of this utility model and is not intended to limit the scope of this utility model. Obviously, those skilled in the art can make various modifications and variations to this utility model without departing from its spirit and scope. Therefore, if these modifications and variations of this utility model fall within the scope of the claims of this utility model and their equivalents, this utility model also intends to include these modifications and variations.

Claims

1. A laser TO package structure, comprising a socket (1) having multiple pins (2) thereon, characterized in that, The cap (13) is provided with an aspherical lens (130), the tube seat (1) is provided with a pair of radio frequency pillars (11), the tube seat (1) is provided with a substrate (12), the substrate (12) is provided with a thermoelectric cooler (3), the thermoelectric cooler (3) is provided with a thermistor (4) and a pad (5) on the cooling surface of the thermoelectric cooler (3), the pad (5) is provided with an MPD chip (7), the tube seat (1) is also provided with a first heat sink (8), the first heat sink (8) is located between the radio frequency pillars (11), the front side of the first heat sink (8) is provided with a second heat sink (9), the second heat sink (9) is provided with a DFB chip (10). The MPD chip (7) is used to monitor the power and quality of optical signals; Thermistor (4) is used to sense temperature; The DFB chip (10) is used to send a 1286nm optical signal to the cap (13); The DFB chip (10) is bonded to the second heat sink (9) by gold wire bonding; The second heat sink (9) is bonded to the radio frequency pillar (11) by two sets of gold wires; The MPD chip (7) is bonded to one of the pins (2) by gold wire bonding; The pad (5) is bonded to the tube seat (1) by gold wire bonding; The substrate (12) is bonded to two pins (2) by two sets of gold wires; The thermistor (4) is bonded to one of the pins (2) by gold wire; The RF post (11) is connected to two pins (2) respectively; The first heat sink (8) is bonded to the radio frequency post (11) by gold wire bonding.

2. The laser TO packaging structure according to claim 1, characterized in that, The lower end of the thermoelectric cooler (3) is provided with multiple cooling elements, and the lower end of the cooling elements is in contact with the substrate (12).

3. The laser TO packaging structure according to claim 1, characterized in that, The upper side of the pad (5) is plated with gold.

4. The laser TO packaging structure according to claim 1, characterized in that, Both the first heat sink (8) and the second heat sink (9) are made of aluminum nitride.

5. The laser TO packaging structure according to claim 1, characterized in that, The outer wall of the second heat sink (9) is provided with area A (90) and area B (91). Area A (90) and area B (91) are not connected, and the DFB chip (10) is connected to area B (91) by gold wire.

6. The laser TO packaging structure according to claim 1, characterized in that, The radio frequency column (11) has a C region (110) and a D region (111), and there is no electrical connection between the C region (110) and the D region (111); Area A (90) is bonded to area C (110) on one of the radio frequency pillars (11) by gold wire bonding, and area B (91) is bonded to area C (110) on another radio frequency pillar (11) by gold wire bonding; The first heat sink (8) is bonded to the D region (111) on the radio frequency post (11) by gold wire bonding.

7. The laser TO packaging structure according to claim 1, characterized in that, The second heat sink (9) is bonded to the radio frequency pillar (11) by multiple gold wires; The substrate (12) is bonded to two pins (2) by multiple gold wires.

8. The laser TO packaging structure according to claim 7, characterized in that, The second heat sink (9) is bonded to the radio frequency pillar (11) by five gold wires; The substrate (12) is bonded to the two pins (2) by three gold wires.

9. The laser TO packaging structure according to claim 1, characterized in that, The first heat sink (8) is bonded to the radio frequency post (11) by a single gold wire; The pad (5) is bonded to the tube seat (1) by a single gold wire; The MPD chip (7) is bonded to one of the pins (2) by a single gold wire; The thermistor (4) is bonded to one of the pins (2) by a single gold wire.

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