Chemical vapor deposition equipment

Abstract

The utility model belongs to the technical field of semiconductor processing, and discloses chemical vapor deposition equipment which comprises a cavity assembly and a supporting assembly, a reaction cavity is formed in the cavity assembly and used for containing a carrier, and the supporting assembly is arranged in the reaction cavity and used for providing support. The furnace door and the rear end cover respectively cover two ends of the quartz tube in a sealing manner, the flange structures are used for connecting the quartz tube and the furnace door and connecting the quartz tube and the rear end cover, the metal surface, facing the reaction cavity, of the cavity assembly and / or the supporting assembly is coated with a protective coating, and the protective coating is a high-nickel-phosphorus layer. According to the chemical vapor deposition equipment disclosed by the utility model, the corrosion of chlorine generated in the reaction cavity to the metal surface and the risk that the silicon wafer to be coated is polluted can be reduced, and meanwhile, the assembly difficulty and the production cost of the chemical vapor deposition equipment are reduced.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of semiconductor processing, especially to chemical vapor deposition equipment. BACKGROUND

[0002] Chemical vapor deposition equipment is a kind of technical equipment for depositing solid film on the surface of substrate by chemical reaction, and reaction gas needs to be introduced in the coating process to produce chemical reaction between gaseous reactants.The reaction gas used by different chemical vapor deposition equipment is different, and part of the substrate of silicon wafer will produce strong corrosive chlorine gas in the coating process, which will corrode the metal parts in the reaction chamber cavity that directly contact with process gas, resulting in the service life of metal parts being shortened, and the product of chlorine gas and metal reaction, such as ferric chloride, will pollute the silicon wafer.In order to enhance the corrosion resistance of metal parts, part of the chemical vapor deposition equipment will spray ceramic coating on the surface of metal parts, and the brittleness of ceramic coating is large, which is easy to break during assembly and fastening, which increases the difficulty of equipment assembly, and the price of ceramic coating is high, which greatly increases the processing cost of equipment. SUMMARY

[0003] The utility model discloses a chemical vapor deposition equipment, which can solve the problem of the existing chemical vapor deposition equipment using ceramic coating to protect the easy-to-corrode surface, which increases the difficulty of equipment assembly and greatly increases the processing cost.

[0004] To achieve this purpose, the utility model adopts the following technical scheme:

[0005] The utility model provides chemical vapor deposition equipment, including chamber subassembly and support component, the chamber subassembly has reaction cavity in it, the reaction cavity is used for accommodating carrier, the support component is set in the reaction cavity and is used for providing support, the chamber subassembly includes quartz tube, furnace door and rear end cover respectively capped in two ends of the quartz tube and the flange structure for connecting the quartz tube and the furnace door, the quartz tube and the rear end cover, the metal surface on the chamber subassembly and / or the support component towards the reaction cavity is all coated with protective plating, and the protective plating is high nickel phosphorus layer.

[0006] In one of the embodiments, the flange structure comprises a front end outer flange and a rear end outer flange respectively sleeved on the two ends of the quartz tube, the front end outer flange is connected to the furnace door, the rear end outer flange is connected to the rear end cover, the front end outer flange, the rear end outer flange, the furnace door and the rear end cover each form part of the metal surface towards the outer surface of the reaction cavity, the front end outer flange, the rear end outer flange, the furnace door and the rear end cover are all coated with the protective plating layer, the thickness of the protective plating layer is a first thickness, the thickness of the protective plating layer coated on the rest of the metal surface is a second thickness, the first thickness is less than or equal to the second thickness.

[0007] In one of the embodiments, the chemical vapor deposition device further comprises an electrode assembly, the electrode assembly comprises an electrode rod and a furnace tail electrode module, the rear end cover is provided with a mounting hole, the furnace tail electrode module is blocked in the mounting hole and is arranged outside the rear end cover, one end of the electrode rod is connected to the furnace tail electrode module, the other end passes through the mounting hole and extends into the reaction cavity, the outer surface of the furnace tail electrode module is coated with the protective plating layer, the thickness of the protective plating layer is a third thickness, the thickness of the protective plating layer coated on the metal surface is a second thickness, the third thickness is less than or equal to the second thickness.

[0008] In one of the embodiments, the chemical vapor deposition device further comprises an electrode assembly, the electrode assembly comprises an electrode rod and an electrode head arranged in the reaction cavity, the electrode head is arranged at the end of the electrode rod, and the electrode head is used for ionizing the reaction gas in the reaction cavity; and / or,

[0009] The support assembly comprises a heat blocking structure arranged at each end of the quartz tube and / or a thermocouple support seat arranged in the reaction cavity for supporting a thermocouple and / or a support column arranged in the reaction cavity for supporting the carrier and / or a lower auxiliary heating support seat arranged in the reaction cavity for supporting a lower auxiliary heating element.

[0010] In one of the embodiments, the chemical vapor deposition device further comprises a cleaning assembly, the chamber assembly is provided with a cleaning inlet and an air inlet communicating with the reaction cavity, an air inlet pipe of the cleaning assembly communicates with the cleaning inlet, the air inlet pipe is provided with an ionization module and an on-off valve, and the cleaning assembly is used for introducing ionized fluorine-containing cleaning gas into the reaction cavity to clean the inner cavity wall of the reaction cavity.

[0011] In one of the embodiments, the chemical vapor deposition device further comprises a gas path assembly, one end of the gas path assembly communicates with the air inlet, and the other end can selectively communicate with a process gas supply end or an inert gas supply end, when the on-off valve is opened, the gas path assembly communicates with the inert gas supply end; and / or

[0012] The flange structure comprises a front end outer flange for connecting the furnace door, the cleaning inlet and the gas inlet are both arranged on the front end outer flange, the cleaning inlet and the gas inlet are arranged at intervals along the axial direction of the reaction cavity, and the distance between the cleaning inlet and the reaction cavity is less than the distance between the gas inlet and the reaction cavity.

[0013] In one embodiment, the chemical vapor deposition apparatus further comprises a flange inner sleeve ring, the flange inner sleeve ring is embedded in the inner side surface of the flange structure, the flange inner sleeve ring is arranged around the circumference of the flange structure, and the length of the flange inner sleeve ring extends along the axial direction of the flange structure to prevent the inner side surface from contacting the fluorine-containing cleaning gas.

[0014] In one embodiment, the inner side surface of the flange structure is coated with a fluorine-resistant coating layer to prevent the inner side surface from contacting the fluorine-containing cleaning gas.

[0015] In one embodiment, the chemical vapor deposition apparatus further comprises an electrode assembly, the electrode assembly comprises an electrode rod, an electrode head and a protective sleeve, the electrode rod is connected to the chamber assembly and at least partially extends into the reaction cavity, the electrode rod is arranged in the protective sleeve and the end of the electrode rod extends out of the protective sleeve to connect the electrode head.

[0016] In one embodiment, the material of the protective sleeve is ceramic; and / or,

[0017] A plurality of protective sleeves are arranged in sequence along the axial direction of the electrode rod.

[0018] The beneficial effects of the present application are as follows:

[0019] The chemical vapor deposition equipment provided by the utility model, which comprises a chamber assembly and a supporting assembly, has a reaction cavity in the chamber assembly. The supporting assembly is arranged in the reaction cavity and is used for providing support to support structural members such as a thermocouple, a carrier and a lower auxiliary heating member. The chamber assembly comprises a quartz tube, a furnace door and a rear end cover which are respectively capped at two ends of the quartz tube, and a flange structure used for connecting the quartz tube and the furnace door and the quartz tube and the rear end cover. The chamber assembly and / or the supporting assembly are each provided with metal structural members, the metal surfaces of the metal structural members which face the reaction cavity are each coated with a protective plating layer, and the protective plating layer is a high-nickel phosphorus layer. The high-nickel phosphorus layer, also known as a high-phosphorus electroless nickel plating layer, is a phosphorus-rich nickel layer deposited on a metal surface through electroless plating technology. The high-nickel phosphorus layer has a chlorine gas corrosion resistance and can withstand a high temperature of above 650 DEG C, meets the working environmental temperature requirement of the reaction cavity, protects the metal surfaces of the chamber assembly and / or the supporting assembly which face the reaction cavity from corrosion in the process, prolongs the service life of the chemical vapor deposition equipment and avoids the risk of contamination of the to-be-plated silicon wafer. Compared with a ceramic coating, the high-nickel phosphorus layer uses the electroless nickel phosphorus process, has better adhesion, good structural strength, is not prone to cracking and has a lower price, thereby reducing the assembly difficulty and production cost of the chemical vapor deposition equipment. BRIEF DESCRIPTION OF DRAWINGS

[0020] Figure 1 is a structure sectional view of the chemical vapor deposition equipment provided by the utility model embodiment;

[0021] Figure 2 is Figure 1 is a local structure enlarged schematic view of part A in

[0022] Figure 3 is Figure 1 is a local structure enlarged schematic view of part B in

[0023] Figure 4 is a partial structure schematic view of the chemical vapor deposition equipment provided by the utility model embodiment.

[0024] in the figure:

[0025] 1, chamber assembly; 11, reaction cavity; 12, quartz tube; 13, furnace door; 14, rear end cover; 15, flange structure; 151, front end outer flange; 152, rear end outer flange; 2, supporting assembly; 21, thermocouple support seat; 22, lower auxiliary heating support seat; 23, front heat blocking cylinder; 24, first heat blocking plate; 25, second heat blocking plate; 26, third heat blocking plate; 27, front support column; 28, rear support column; 291, ceramic support tube; 292, graphite bolt; 3, electrode assembly; 31, electrode rod; 32, furnace tail electrode module; 33, electrode head; 34, protective sleeve; 4, cleaning assembly; 41, gas inlet pipe; 5, gas path assembly; 6, flange inner sleeve ring. DETAILED DESCRIPTION

[0026] The technical solutions of the present application will be described clearly and completely in combination with the drawings. Obviously, the described embodiments are some of the embodiments of the present application, but not all the embodiments. Based on the embodiments of the present application, all the other embodiments obtained by those skilled in the art without creative labor fall within the scope of the present application.

[0027] In the description of the present application, it should be noted that the orientations or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application. In addition, the terms "first", "second", etc. are only for the purpose of description, and cannot be understood as indicating or implying relative importance. Among them, the terms "first position" and "second position" are two different positions, and moreover, the "above", "above" and "above" of the first feature on the second feature include the "above" and "above" of the first feature on the second feature, or only indicate that the horizontal height of the first feature is higher than that of the second feature. The "below", "below" and "below" of the first feature on the second feature include the "below" and "below" of the first feature on the second feature, or only indicate that the horizontal height of the first feature is less than that of the second feature.

[0028] In the description of the present application, it should be noted that unless otherwise explicitly specified and limited, the terms "mounting", "connection", "connection" should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or integrally connected; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium; it can be the communication inside two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0029] The embodiments of the present application will be described in detail below, and examples of the embodiments are shown in the drawings, wherein the same or similar reference numerals represent the same or similar elements or elements with the same or similar functions throughout. The embodiments described below by referring to the drawings are exemplary and are only used to explain the present application, and cannot be understood as limiting the present application.

[0030] Different chemical vapor deposition equipment uses different reaction gas, and part of the substrate of silicon wafer will produce strong corrosive chlorine gas in the process of film plating, which will corrode the metal parts directly contacted with the process gas in the reaction chamber cavity, resulting in shortening the service life of the metal parts. For example, in the process of preparing P-poly silicon by PECVD (plasma enhanced chemical vapor deposition), boron trichloride gas is often used as the reaction gas, which is converted into plasma state under the condition of high temperature and radio frequency discharge, so as to deposit a poly-silicon layer on the surface of the silicon wafer. However, this chemical reaction will produce strong corrosive chlorine gas, which will combine with water vapor on the surface of the metal to corrode the metal parts, affect the function of the metal parts, greatly shorten the service life of the metal parts, and in addition, the product of the reaction between chlorine and metal, such as iron chloride, will contaminate the silicon wafer.

[0031] To solve the above problems, as shown in Figures 1 to 4 The embodiment provides a chemical vapor deposition equipment. The chemical vapor deposition equipment comprises a chamber assembly 1 and a support assembly 2. The chamber assembly 1 has a reaction cavity 11 for accommodating a carrier for carrying a silicon wafer to be plated. The support assembly 2 is arranged in the reaction cavity 11 and is used to provide support for a thermocouple, a carrier, a lower auxiliary heating element and other structural members. The chamber assembly 1 comprises a quartz tube 12, a furnace door 13 and a rear end cover 14 respectively covering both ends of the quartz tube 12, and a flange structure 15 for connecting the quartz tube 12 and the furnace door 13 and the quartz tube 12 and the rear end cover 14. The chamber assembly 1 and / or the support assembly 2 has a metal structural member, and the metal surface of the metal structural member facing the reaction cavity 11 is coated with a protective plating layer, which is a high-nickel-phosphorus layer. The high-nickel-phosphorus layer, also known as high-phosphorus electroless nickel plating layer, is a layer of nickel rich in phosphorus deposited on the metal surface by electroless plating technology. The phosphorus content of the high-nickel-phosphorus layer is about 9% to 13%, which has the effect of resisting chlorine corrosion and can resist high temperature above 650℃, meeting the working temperature requirement of the reaction cavity 11, protecting the metal surface of the chamber assembly 1 and / or the support assembly 2 facing the reaction cavity 11 from corrosion during the process, prolonging the service life of the chemical vapor deposition equipment, and avoiding the risk of contamination of the silicon wafer to be plated. Compared with the ceramic coating, the high-nickel-phosphorus layer uses the electroless nickel-phosphorus process, has better adhesion, good structural strength and is not easy to crack, and has a lower price, which reduces the assembly difficulty and production cost of the chemical vapor deposition equipment.

[0032] The flange structure 15 includes a front end outer flange 151 and a rear end outer flange 152 respectively sleeved on both ends of the quartz tube 12, the front end outer flange 151 is connected to the furnace door 13 and used for closing the front end of the quartz tube 12. The rear end outer flange 152 is connected to the rear end cover 14 and used for closing the rear end of the quartz tube 12. The front end outer flange 151, the rear end outer flange 152, the furnace door 13 and the rear end cover 14 each form a part of the metal surface towards the outer surface of the reaction cavity 11. In order to improve the convenience of the electroless nickel plating process, the entire surface of the front end outer flange 151, the rear end outer flange 152, the furnace door 13 and the rear end cover 14 is coated with a protective plating layer. The thickness of the protective plating layer is a first thickness, and the thickness of the protective plating layer coated on the remaining metal surface is a second thickness, the first thickness is less than or equal to the second thickness. The cooperation state of the front end outer flange 151, the rear end outer flange 152, the furnace door 13 and the rear end cover 14 determines the sealing performance of the reaction cavity 11, and further affects the processing quality of the chemical vapor deposition equipment. Therefore, the thickness of the protective plating layer of the front end outer flange 151, the rear end outer flange 152, the furnace door 13 and the rear end cover 14 is less than the thickness of the protective plating layer of the other metal surface, so as to avoid affecting the sealing performance of the front end outer flange 151, the rear end outer flange 152, the furnace door 13 and the rear end cover 14.

[0033] The chemical vapor deposition process includes various types. For plasma enhanced chemical vapor deposition (PECVD), the chemical vapor deposition equipment further includes an electrode assembly 3, which includes an electrode rod 31 and a furnace tail electrode module 32. The rear end cover 14 is provided with a mounting hole, the furnace tail electrode module 32 is blocked in the mounting hole and arranged outside the rear end cover 14, one end of the electrode rod 31 is connected to the furnace tail electrode module 32, and the other end extends into the reaction cavity 11 through the mounting hole. Therefore, the sealing performance of the furnace tail electrode module 32 is also important. The chlorine gas in the reaction cavity 11 has the risk of corroding the furnace tail electrode module 32 through the mounting hole. Therefore, the outer surface of the furnace tail electrode module 32 is coated with a protective plating layer, the thickness of the protective plating layer is a third thickness, and the thickness of the protective plating layer coated on the metal surface is a second thickness, the third thickness is less than or equal to the second thickness. Compared with other metal surfaces, the protective plating layer of the furnace tail electrode module 32 is slightly smaller, so as to avoid affecting the sealing performance of the furnace tail electrode module 32.

[0034] In an embodiment, the third thickness and the first thickness are equal, both of which are 0.05 mm; and the thickness of the protective plating layer of the other metal surface is 0.05 mm to 0.15 mm. If the thickness is too thick, the adhesion of the protective plating layer is poor, and the surface is easy to crack. Therefore, for the important sealing parts such as the front end outer flange 151, the rear end outer flange 152, the furnace door 13, the rear end cover 14 and the furnace tail electrode module 32, the thickness of the protective plating layer is maintained at 0.05 mm; and for other metal structural parts in the chamber assembly 1 and the support assembly 2 without roughness requirement, the thickness of the protective plating layer is controlled at 0.05 mm to 0.15 mm.

[0035] The electrode assembly 3 further comprises an electrode head 33 arranged in the reaction cavity 11, the electrode head 33 is arranged at the end of the electrode rod 31, the electrode head 33 is used to ionize the reaction gas in the reaction cavity 11, and the materials of the electrode head 33 and the electrode rod 31 are both strong corrosion-resistant alloys. Because the electrode assembly 3 has the requirement of electrical conductivity, it is not convenient to coat the high-nickel phosphorus layer which does not have the conductivity, so the materials of the electrode head 33 and the electrode head 33 are both strong corrosion-resistant alloys.

[0036] In order to realize the assembly connection of the structural parts, the chemical vapor deposition equipment further comprises a connecting assembly, the connecting assembly comprises a plurality of connecting bolts, and the materials of the connecting bolts are also selected to be strong corrosion-resistant alloys.

[0037] Specifically, the support assembly 2 comprises a heat blocking structure arranged at both ends of the quartz tube 12 respectively, a thermocouple support seat 21 arranged in the reaction cavity 11 for supporting a thermocouple, a support column arranged in the reaction cavity 11 for supporting a carrier, and a lower auxiliary heating support seat 22 arranged in the reaction cavity 11 for supporting lower auxiliary heating. Exemplarily, in an embodiment, the chemical vapor deposition equipment has a front heat blocking cylinder 23 arranged at the front end of the quartz tube 12, a first heat blocking plate 24, a second heat blocking plate 25 and a third heat blocking plate 26 arranged at the rear end of the quartz tube 12 and spaced along the axial direction of the quartz tube 12, the thermocouple support seat 21 for supporting the thermocouple, the front support column 27 and the rear support column 28 arranged in the reaction cavity 11 for supporting the carrier, and the lower auxiliary heating support seat 22 arranged in the reaction cavity 11 for supporting the lower auxiliary heating. The surfaces of the support assembly 2 formed by these metal structural parts are all provided with protective plating layers to prevent corrosion by the chlorine gas in the reaction cavity 11.

[0038] The front support column 27 and the rear support column 28 are respectively sleeved with ceramic support tubes 291, and the ceramic support tubes 291 are limited by graphite bolts 292, and the ceramic and graphite materials are not affected by the corrosion of chlorine gas.

[0039] The materials of the metal structural parts of the chamber assembly 1 and the support assembly 2 are strong corrosion-resistant alloys, and these metal structural parts include but are not limited to the front end outer flange 151, the rear end outer flange 152, the furnace door 13, the rear end cover 14, the front heat blocking cylinder 23, the first heat blocking plate 24, the second heat blocking plate 25, the third heat blocking plate 26, the thermocouple support seat 21, the front support column 27, the rear support column 28 and the lower auxiliary heating support seat 22.

[0040] The electrode head 33 and the electrode rod 31 of the electrode assembly 3, the connecting bolt of the connecting assembly, and the metal structural members of the chamber assembly 1 and the supporting assembly 2 are made of an alloy with strong corrosion resistance, which can be Hastelloy, precipitation strengthened nickel-based superalloy (GH4169), or low-carbon chromium-nickel-molybdenum stainless steel (316L). The above-mentioned structures can be made of one type of alloy, or two or three types of alloy materials can be selected as needed.

[0041] Hastelloy, also known as nickel-based corrosion-resistant alloy, has good corrosion resistance and thermal stability, meets the electrical conductivity requirements, and is not easily corroded by chlorine gas in the reaction chamber 11. Precipitation strengthened nickel-based superalloy (GH4169) has good fatigue resistance, radiation resistance, oxidation resistance, and corrosion resistance, as well as good processing and welding performance, ensuring the assembly reliability of the chemical vapor deposition equipment. Compared with the commonly used 304 stainless steel material, the 316L material increases the addition of molybdenum element, which significantly improves the performance of 316L stainless steel in some corrosive environments, especially in the reaction chamber 11 containing chloride. Using 316L as the base material and setting a protective plating layer on the surface, while having the effect of slowing down the corrosion speed of the metal structure and the protective plating layer, provides double protection for the metal structure from corrosion, and prolongs the service life of the metal structure.

[0042] For some chemical vapor deposition equipment using low-pressure chemical vapor deposition (LPCVD) process, in the reaction process, in addition to the generation of corrosive gas, the inner wall of the quartz tube 12 will also deposit a layer of amorphous silicon film. As the reaction time increases, the thickness of the amorphous silicon film also increases, and when the thickness of the amorphous silicon film reaches a certain value, due to the difference in expansion coefficient between amorphous silicon and quartz, the quartz tube 12 is prone to rupture, which seriously affects the operation and actual capacity of the chemical vapor deposition equipment. In order to solve this problem, the chemical vapor deposition equipment further comprises a cleaning assembly 4, the chamber assembly 1 is provided with a cleaning inlet and a gas inlet communicating with the reaction chamber 11, and the cleaning assembly 4 is provided with an air inlet pipe 41 communicating with the cleaning inlet. The air inlet pipe 41 is provided with an ionization module and a switch valve, and the cleaning assembly 4 is used to introduce ionized fluorine-containing cleaning gas into the reaction chamber 11 to clean the inner wall of the reaction chamber 11.

[0043] The cleaning assembly 4 mixes fluorine-containing gas (NF3, CF4, etc.) provided by an external gas supply device with argon and ionizes the fluorine-containing gas through an ionization module to generate fluorine-containing cleaning gas, which can clean amorphous silicon film deposited on the inner wall of the quartz tube 12. Since fluorine radicals contained in the fluorine-containing cleaning gas have strong oxidizing properties, they can easily corrode the inner wall of the flange structure 15, affecting the sealing effect of the reaction chamber 11 and thus the working stability of the chemical vapor deposition device. Moreover, metal ions (iron ions, etc.) produced by the corrosion of the flange structure 15 can diffuse inside the reaction chamber 11 and easily deposit on the surface of the silicon wafer to be plated during the LPCVD process, greatly affecting the process effect. Therefore, one end of the gas path assembly 5 of the chemical vapor deposition device is connected to the gas inlet, and the other end can selectively connect to the process gas supply end or the inert gas supply end. During normal plating, the gas path assembly 5 is connected to the process gas supply end; after the plating process is completed, when the switch valve of the cleaning assembly 4 is opened, it indicates that the reaction chamber 11 needs to be cleaned. At this time, the gas path assembly 5 selectively connects to the inert gas supply end, and inert gas is introduced into the chamber assembly 1 to form a protective gas field, which is used to limit the contact of fluorine radicals with the flange structure 15 to protect the inner wall of the flange structure 15. The selective connection of the gas path assembly 5 and the process gas supply end or the inert gas supply end can be controlled by a valve body, which can be set according to the prior art. The inert gas can be nitrogen or other non-active gas, which is not limited in the present embodiment.

[0044] Specifically, the flange structure 15 includes a front end outer flange 151 for connecting the furnace door 13, and the cleaning inlet and the gas inlet are both provided in the front end outer flange 151. Along the axial direction of the reaction chamber 11, the cleaning inlet and the gas inlet are arranged at intervals, and the distance between the cleaning inlet and the reaction chamber 11 is less than the distance between the gas inlet and the reaction chamber 11. In this way, the non-active gas is mainly diffused at the front end outer flange 151, and the protection effect is better. Moreover, it is also beneficial for the fluorine-containing cleaning gas to flow into the reaction chamber 11.

[0045] In order to improve the uniformity of the protective gas field, the pipeline of the gas path assembly 5 forms multiple branches, and the front end outer flange 151 is provided with multiple gas inlets in the circumferential direction to correspond to the multiple branch pipelines respectively. In this way, the inert gas flows into the chamber assembly 1 uniformly from multiple directions, which is conducive to forming a uniform and stable protective gas field at the front end outer flange 151 of the furnace port.

[0046] The chemical vapor deposition device further comprises a flange inner sleeve 6 embedded in the inner side of the front end outer flange 151. The flange inner sleeve 6 is annularly arranged on the circumference of the front end outer flange 151, and the length of the flange inner sleeve 6 extends along the axial direction of the front end outer flange 151 to isolate the inner side from the fluorine-containing cleaning gas. The flange inner sleeve 6 can cover the inner side of the front end outer flange 151 and part of the inner cavity wall of the quartz tube 12, to some extent, limit the fluorine radicals from contacting the front end outer flange 151, and avoid the corrosion of the metal material of the front end outer flange 151. The flange inner sleeve 6 is locked on the inner side of the flange structure 15 by screws to avoid falling off. The flange inner sleeve 6 can be made of an alloy material that does not react with the fluorine-containing cleaning gas, which is not limited in the embodiment.

[0047] Further, the inner side of the flange structure 15 is coated with a fluorine-resistant plating layer to isolate the inner side from the fluorine-containing cleaning gas. The fluorine-resistant plating layer has sufficient temperature resistance and adhesion, and will not fall off or denature in a high-temperature environment, while improving the corrosion resistance of the front end outer flange 151, so that it can resist the strong oxidizing property of fluorine radicals, and further avoid the corrosion of the front end outer flange 151.

[0048] In order to reduce the contact area between the electrode rod 31 and the chlorine gas, a protective sleeve 34 is sleeved on the electrode rod 31 of the electrode assembly 3, the electrode rod 31 is arranged in the protective sleeve 34 and the end extends out of the protective sleeve 34 to connect the electrode head 33. The protective sleeve 34 can protect the electrode rod 31 from being plated with a plating layer during the plating process. The protective sleeve 34 is provided in plurality, and the plurality of protective sleeves 34 are arranged in sequence along the axial direction of the electrode rod 31. The material of the protective sleeve 34 is ceramic, which will not be oxidized and corroded by fluorine radicals.

[0049] Obviously, the above embodiments of the present application are only examples for clearly illustrating the present application, and are not intended to limit the embodiments of the present application. For those skilled in the art, various obvious changes, re-adjustments and substitutions can be made without departing from the scope of the present application. Here, it is not necessary and impossible to enumerate all the embodiments. Any modification, equivalent substitution and improvement made within the spirit and principle of the present application shall be included in the protection scope of the claims of the present application.

Claims

1. A chemical vapor deposition apparatus characterized by comprising: The chemical vapor deposition device comprises a chamber assembly (1) and a support assembly (2), the chamber assembly (1) has a reaction cavity (11) for accommodating a carrier, the support assembly (2) is arranged in the reaction cavity (11) and is used for providing support, the chamber assembly (1) comprises a quartz tube (12), a furnace door (13) and a rear end cover (14) respectively covering two ends of the quartz tube (12), and a flange structure (15) for connecting the quartz tube (12) and the furnace door (13) and the quartz tube (12) and the rear end cover (14), and metal surfaces of the chamber assembly (1) and / or the support assembly (2) towards the reaction cavity (11) are coated with protective plating layers, and the protective plating layers are high-nickel phosphorus layers.

2. The chemical vapor deposition apparatus according to claim 1, wherein The flange structure (15) comprises a front end outer flange (151) and a rear end outer flange (152) respectively sleeved on two ends of the quartz tube (12), the front end outer flange (151) is connected to the furnace door (13), the rear end outer flange (152) is connected to the rear end cover (14), and outer surfaces of the front end outer flange (151), the rear end outer flange (152), the furnace door (13) and the rear end cover (14) towards the reaction cavity (11) form part of the metal surfaces, the front end outer flange (151), the rear end outer flange (152), the furnace door (13) and the rear end cover (14) are coated with the protective plating layers, the thickness of the protective plating layers is a first thickness, the thickness of the protective plating layers coated on the remaining metal surfaces is a second thickness, and the first thickness is less than or equal to the second thickness.

3. The chemical vapor deposition apparatus according to claim 1, wherein The chemical vapor deposition device further comprises an electrode assembly (3), the electrode assembly (3) comprises an electrode rod (31) and a furnace tail electrode module (32), the rear end cover (14) is provided with a mounting hole, the furnace tail electrode module (32) is blocked in the mounting hole and is arranged outside the rear end cover (14), one end of the electrode rod (31) is connected to the furnace tail electrode module (32), the other end of the electrode rod (31) passes through the mounting hole and extends into the reaction cavity (11), and an outer surface of the furnace tail electrode module (32) is coated with the protective plating layers, the thickness of the protective plating layers is a third thickness, the thickness of the protective plating layers coated on the metal surfaces is a second thickness, and the third thickness is less than or equal to the second thickness.

4. The chemical vapor deposition apparatus according to claim 1, wherein The chemical vapor deposition device further comprises an electrode assembly (3), the electrode assembly (3) comprises an electrode rod (31) and an electrode head (33) arranged in the reaction cavity (11), the electrode head (33) is arranged at the end of the electrode rod (31), and the electrode head (33) is used for ionizing reaction gas in the reaction cavity (11); and / or, The support assembly (2) comprises a heat blocking structure arranged at both ends of the quartz tube (12), a thermocouple support seat (21) arranged in the reaction cavity (11) for supporting a thermocouple, a support column arranged in the reaction cavity (11) for supporting the carrier, and a lower auxiliary heating support seat (22) arranged in the reaction cavity (11) for supporting a lower auxiliary heating element.

5. The chemical vapor deposition apparatus of claim 1, wherein The chemical vapor deposition device further comprises a cleaning assembly (4), the chamber assembly (1) is provided with a cleaning inlet and a gas inlet communicating with the reaction cavity (11), an air inlet pipe (41) of the cleaning assembly (4) communicates with the cleaning inlet, the air inlet pipe (41) is provided with an ionization module and a switch valve, and the cleaning assembly (4) is used for introducing ionized fluorine-containing cleaning gas into the reaction cavity (11) to clean the inner wall of the reaction cavity (11).

6. The chemical vapor deposition apparatus according to claim 5, wherein The chemical vapor deposition device further comprises a gas path assembly (5), one end of the gas path assembly (5) communicates with the gas inlet, and the other end selectively communicates with a process gas supply end or an inert gas supply end, and when the switch valve is opened, the gas path assembly (5) communicates with the inert gas supply end; and / or, The flange structure (15) comprises a front end outer flange (151) for connecting the furnace door (13), the cleaning inlet and the gas inlet are both arranged on the front end outer flange (151), and the cleaning inlet and the gas inlet are arranged at intervals along the axial direction of the reaction cavity (11), and the distance between the front of the cleaning inlet and the reaction cavity (11) is less than the distance between the gas inlet and the reaction cavity (11).

7. The chemical vapor deposition apparatus according to claim 5, wherein The chemical vapor deposition device further comprises a flange inner sleeve ring (6), the flange inner sleeve ring (6) is embedded on the inner side of the flange structure (15), the flange inner sleeve ring (6) is arranged in the circumferential direction of the flange structure (15), and the length of the flange inner sleeve ring (6) extends along the axial direction of the flange structure (15) to prevent the inner side from contacting the fluorine-containing cleaning gas.

8. The chemical vapor deposition apparatus of claim 5, wherein, The inner side of the flange structure (15) is coated with a fluorine-resistant plating layer to prevent the inner side from contacting the fluorine-containing cleaning gas.

9. The chemical vapor deposition apparatus of claim 1, wherein, The chemical vapor deposition device further comprises an electrode assembly (3), the electrode assembly (3) comprises an electrode rod (31), an electrode head (33) and a protective sleeve (34), the electrode rod (31) is connected to the chamber assembly (1) and at least partially extends into the reaction cavity (11), the electrode rod (31) is arranged in the protective sleeve (34) and the end thereof extends out of the protective sleeve (34) to connect the electrode head (33).

10. The chemical vapor deposition apparatus of claim 9, wherein The material of the protective sleeve (34) is ceramic; and / or, The protective sleeve (34) is arranged in multiple, and the multiple protective sleeves (34) are arranged in sequence along the axial direction of the electrode rod (31).

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