Thin film stress adjusting device and semiconductor device process equipment

Abstract

The utility model discloses a film stress adjusting device and semiconductor device process equipment. The adjusting device comprises a base, the interior of the base comprises a plurality of gas pipes, and reaction gas is introduced into the first gas pipe; a wafer with the front face coated with a film is placed on the heating disc in a spaced mode, a plurality of air outlet areas corresponding to a plurality of areas on the back face of the wafer are arranged on the surface of the heating disc, and when a first deformation area warping due to first film stress on the front face appears in the wafer, the first deformation area and the second deformation area are separated from each other. And outputting the reaction gas from the gas outlet area below the first deformation area so as to deposit a second thin film on the first deformation area on the back surface of the wafer, and providing downward tensile stress for the first deformation area through the second thin film so as to recover the deformation of the first deformation area. According to the utility model, the problem of deformation of the coated wafer caused by the stress of the film on the front surface can be improved in a targeted manner, and the stability of the product is improved.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of semiconductor manufacturing, specifically relates to a kind of film stress adjusting device and a kind of process equipment of semiconductor device. BACKGROUND

[0002] In the current process equipment of semiconductor device, the film deposited by spraying reaction gas via spraying component, for example, shower head (SHD), is generally formed as a whole in the whole wafer area. With the increase of wafer surface film thickness, wafer will warp under the stress of film, which will be adverse to subsequent film deposition and subsequent application. In addition, the uneven distribution of reaction gas sprayed onto the wafer surface will lead to uneven distribution of film material on the wafer, which may also cause wafer to warp.

[0003] When the tensile stress and / or compressive stress on the front surface of the wafer reaches a certain level and cannot be released during deposition, the wafer is prone to serious warping or even fragmentation. In addition, for product structure, when the film stress on different areas of the wafer is too different, the structure of different areas of the wafer will be too different, which will adversely affect the stability of the product.

[0004] In order to solve the above problems existing in the prior art, there is an urgent need in the art for a film stress adjustment technology that can specifically improve the deformation problem of plated wafer caused by the film stress on the front surface and improve the stability of the product. SUMMARY

[0005] The following gives a brief summary of one or more aspects to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all contemplated aspects, and neither is it intended to identify key or critical elements of all aspects nor to delineate the scope of any or all aspects. Its only purpose is to present some concepts of one or more aspects in a simplified form, before the more detailed description is given later.

[0006] In order to overcome the above-mentioned defects existing in the prior art, the utility model provides a kind of film stress adjusting device and a kind of process equipment of semiconductor device, which can specifically improve the deformation problem of plated wafer caused by the film stress on the front surface and improve the stability of the product.

[0007] Specifically, according to the first aspect of the utility model provides the above thin film stress adjustment device, including: base, its inside includes several bar trachea, wherein, first trachea in the reaction gas is passed through;And heating disc, its upper space is placed the wafer of front surface film, the surface of heating disc is equipped with the multiple area of the multiple area of wafer back surface of gas outlet area, wherein, when the wafer in the first deformation zone that occurs due to the first thin film stress of front surface warping, the reaction gas is output from the gas outlet area below the first deformation zone, to deposit the second thin film in the first deformation zone of wafer back surface, provides the downward tensile stress of the first deformation zone via the second thin film and makes it recover deformation.

[0008] Further, in some embodiments of the utility model, the second trachea in the base is passed through inert gas, the adjustment device further includes: gas flow channel, set up on the surface of the base, including at least two flow channels extending from the center of the surface of the base to the edge, to carry out the first-stage gas distribution of the reaction gas and the inert gas, so that they are transmitted separately.

[0009] Further, in some embodiments of the utility model, the beginning of the flow channel is communicated with the trachea, and the terminal end extends to the edge of the surface, so that the reaction gas or the inert gas flows to the edge of the surface, and the inert gas or the reaction gas in the other trachea is transmitted from the center of the surface.

[0010] Further, in some embodiments of the utility model, the heating disc includes a flow distribution plate in the surface, the flow distribution plate includes a plurality of boundary areas, and different hole positions are arranged in each boundary area, for receiving the reaction gas and the inert gas transmitted by the gas distribution channel, and carrying out the second-stage gas distribution, so that the reaction gas and the inert gas to different areas are transmitted separately.

[0011] Further, in some embodiments of the utility model, the flow distribution plate includes two center-symmetrical gas hole channels, so as to divide the flow distribution plate into a center boundary area and two side boundary areas located on both sides of the center boundary area, and the center boundary area includes a flow guide hole, so that the reaction gas and the inert gas are transmitted separately via the gas hole channel and the flow guide hole.

[0012] Further, in some embodiments of the utility model, the two side boundary areas include a plurality of gas hole channels, forming a gas hole channel array, for uniform gas transmission of the reaction gas or the inert gas flowing through the two side boundary areas.

[0013] Further, in some embodiments of the present application, a first baffle is arranged between the flow channel terminal of the gas distribution channel and the flow distribution plate to reduce the flow rate of the reaction gas or the inert gas flowing to the two side demarcation zones.

[0014] Further, in some embodiments of the present application, a perforated plate is further arranged in the heating disc above the flow distribution plate, and the perforated plate is divided into three uniform gas distribution zones via a partition channel to respectively correspond to the center demarcation zone and the two side demarcation zones of the flow distribution plate, so that the reaction gas and the inert gas output via the center demarcation zone and the two side demarcation zones are subjected to three-stage gas distribution to be uniformly output to the plurality of regions on the back surface of the wafer.

[0015] Further, in some embodiments of the present application, a second baffle is further arranged between the center demarcation zone of the flow distribution plate and the perforated plate to reduce the flow rate of the reaction gas or the inert gas flowing to the center uniform gas distribution zone of the perforated plate.

[0016] In addition, the process equipment for semiconductor devices according to the second aspect of the present application comprises: a reaction cavity; and the above-mentioned thin film stress adjusting device according to the first aspect of the present application, which is arranged in the reaction cavity, and the wafer with front surface film is placed in the heating disc of the adjusting device to restore the first deformation zone of the wafer which is warped due to the first thin film stress of the front surface. BRIEF DESCRIPTION OF DRAWINGS

[0017] The above features and advantages of the present application can be better understood by reading the detailed description of embodiments of the present application in conjunction with the following drawings, in which the components are not necessarily drawn to scale and components of similar or identical function or structure can have the same or similar reference numbers. The detailed description of the embodiments of the present application is provided with reference to the accompanying drawings.

[0018] Figure 1 Fig. 1 shows a structure schematic diagram of a thin film stress adjusting device according to some embodiments of the present application;

[0019] Figure 2 Fig. 2 shows an exploded view of a thin film stress adjusting device according to some embodiments of the present application;

[0020] Figure 3 Fig. 3 shows a structure schematic diagram of a base surface according to some embodiments of the present application;

[0021] Figure 4A Fig. 4 shows a structure schematic diagram of a flow distribution plate according to some embodiments of the present application; 4B Fig. 5 shows a structure schematic diagram of another flow distribution plate according to some embodiments of the present application;

[0022] Figure 5A ,5B Fig. 5C respectively shows a structural schematic diagram of three kinds of orifice plates provided according to some embodiments of the present application;

[0023] Figure 6 Fig. 6 shows a flow chart of a method for adjusting film stress provided according to some embodiments of the present application;

[0024] Figure 7 Fig. 7 shows a schematic diagram of an air flow distribution path of an adjusting device for film stress provided according to some embodiments of the present application; and

[0025] Figure 8 Fig. 8 shows a schematic diagram of a backside silane mass distribution when adjusting film stress provided according to some embodiments of the present application; and

[0026] Figure 9 Fig. 9 shows a flow chart of depositing a second film in a first deformation region on a wafer backside provided according to some embodiments of the present application.

[0027] Reference signs:

[0028] 100 adjusting device for film stress;

[0029] 110 heating disc;

[0030] 111 support seat;

[0031] 112 support frame;

[0032] 120 base;

[0033] 131 center air outlet region;

[0034] 132, 133 two side air outlet regions;

[0035] 211 first air pipe;

[0036] 212 second air pipe;

[0037] 220 heating element;

[0038] 221 cover plate;

[0039] 230 first baffle plate;

[0040] 240 second baffle plate;

[0041] 300 air distribution channel;

[0042] 310 flow channel;

[0043] 311 beginning end of flow channel;

[0044] 312 end of flow channel;

[0045] 320 center gas outlet hole

[0046] 400, 400a, 400b flow distribution plate

[0047] 410a, 410b gas hole channel

[0048] 411 gas hole channel array

[0049] 421 center demarcation area

[0050] 422 two-side demarcation area

[0051] 430 flow guide hole

[0052] 500, 500a, 500b, 500c hole plate

[0053] 510a, 510b, 510c center uniform gas area

[0054] 520a, 520b, 520c two-side uniform gas area

[0055] 530a partition passage

[0056] S610-S630 steps

[0057] 710 first gas

[0058] 720 second gas; and

[0059] S621-S623 steps DETAILED DESCRIPTION

[0060] The embodiments of the present application will be described in detail by specific embodiments, and those skilled in the art can easily understand other advantages and effects of the present application from the disclosure. Although the description of the present application will be introduced together with the preferred embodiments, it does not mean that the features of the present application are limited to the embodiments. On the contrary, the purpose of introducing the present application with the embodiments is to cover other options or modifications that can be extended based on the claims of the present application. In order to provide a deep understanding of the present application, many specific details will be included in the following description. The present application can also be implemented without using these details. In addition, in order to avoid confusion or obscure the focus of the present application, some specific details will be omitted in the description.

[0061] In the description of the utility model, it needs to explain, unless another explicit provision and limitation, the term "installation", "link", "connection" should do the broad sense understanding, for example, can be fixed connection, also can be detachable connection, or integrally connected, can be mechanical connection, also can be electrical connection, can be direct connection, also can indirectly connect through the intermediate medium, can be two elements inside the intercommunication. For ordinary skilled in the art, the specific meaning of the above terms in the utility model can be understood according to specific circumstances.

[0062] In addition, "upper", "lower", "left", "right", "top", "bottom", "horizontal", "vertical" used in the following description should be understood as the orientation shown in the paragraph and the related drawings. The relative terms are only for the convenience of description, and do not mean that the device described should be manufactured or operated in a particular orientation, so it should not be understood as a limitation on the utility model.

[0063] It can be understood that although the terms "first", "second", "third" and the like can be used herein to describe various components, regions, layers and / or parts, these components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and / or parts. Therefore, the first component, region, layer and / or part discussed below can be referred to as the second component, region, layer and / or part without departing from some embodiments of the utility model.

[0064] As described above, in the current semiconductor device process equipment, the thin film deposited by spraying reaction gas through a spraying component, such as a shower head (SHD), is generally formed as a whole in the entire wafer area. With the increase of the wafer surface film thickness, the wafer will produce warping deformation under the stress of the thin film, which will be adverse to the subsequent thin film deposition and subsequent application. In addition, the reaction gas sprayed onto the wafer surface is not uniformly distributed, which will lead to uneven distribution of the thin film material on the wafer, and may also cause the wafer to warp.

[0065] In order to solve the above problems existing in the prior art, the utility model provides a kind of adjustment device of thin film stress and a kind of semiconductor device process equipment, can be targeted to improve the deformation problem of plated film wafer due to the thin film stress of front, improve the stability of product.

[0066] In some non-limiting embodiments, the above-mentioned thin film stress adjustment device provided by the first aspect of the utility model can be configured in the above-mentioned semiconductor device process equipment provided by the second aspect of the utility model.

[0067] The working principle of the thin film stress adjusting device will be described below in combination with some embodiments of semiconductor device processing equipment. Those skilled in the art can understand that the embodiments of semiconductor device processing equipment are only some non-limiting embodiments provided by the present application, which are intended to clearly show the main concept of the present application and provide some specific schemes for the public to implement, rather than to limit the overall working mode or overall function of the thin film stress adjusting device. Similarly, the thin film stress adjusting device is also only a non-limiting embodiment provided by the present application, which does not limit other configuration objects in the semiconductor device processing equipment.

[0068] Specifically, in some embodiments of the present application, the semiconductor device processing equipment can include a reaction cavity inside which a process reaction is performed. The thin film stress adjusting device can be included inside the reaction cavity. The front-side coated wafer can be placed in the air on the heating disc of the thin film stress adjusting device to restore the first deformation area in the wafer that is warped due to the first thin film stress of the front side.

[0069] For this purpose, please refer to Figure 1 , Figure 1 A structural schematic diagram of a thin film stress adjusting device according to some embodiments of the present application is shown.

[0070] As Figure 1 shown, in some embodiments of the present application, the thin film stress adjusting device 100 can include a heating disc 110 and a controller (not shown in the drawing). The front-side coated wafer 70 can be placed in the air on the heating disc 110, and the surface of the heating disc 110 can be provided with a plurality of gas outlet areas, for example, can include a central gas outlet area 131 and two side gas outlet areas 132, 133 located on both sides thereof to correspond to a plurality of areas on the back of the wafer 70 respectively. The controller can be configured to: in response to the occurrence of a first deformation area in the wafer 70 that is warped due to the first thin film stress of the front side, output a reaction gas from the gas outlet area below the first deformation area to deposit a second thin film on the first deformation area on the back of the wafer, wherein the second thin film can provide a downward tensile stress to the first deformation area. That is, the present embodiment can deposit films on the back of the wafer 70 according to the needs, so that different stress and strain effects can be generated by controlling the film thickness on the back of the wafer 70 to adjust the warping deformation of the wafer 70.

[0071] Specifically, in some optional embodiments, the edge of the heating disc 110 can be provided with a plurality of horseshoe-shaped support seats 111, and the upper end of each support seat 111 can be provided with a ceramic annular support frame 112. Through the cooperation of the support seat 111 and the support frame 112, the wafer 70 can be provided with support to be fixed in the air above the heating disc 110. Preferably, in order to facilitate the flow and diffusion of the reaction gas on the back surface of the wafer 70, the air distance between the back surface of the wafer 70 and the heating disc 110 can be 5-15 mm.

[0072] Further, as Figure 1 shown, in some embodiments, the thin film stress adjusting device 100 can further include a base 120 to support the above-mentioned heating disc 110. Specifically, please refer to Figure 2 , Figure 2 an exploded view of a thin film stress adjusting device according to some embodiments of the present application is shown.

[0073] As Figure 2 shown, in some embodiments, the heating disc 110 can include a heating element 220, wherein the heating element 220 can include a resistance wire or a liquid heating pipeline, for example, an oil pipe heating pipeline. The heating element 220 can be installed in the heating disc 110 through a cover plate 221.

[0074] As Figure 2 shown, the inside of the base 120 can further include a plurality of gas pipes, which can be used to introduce reaction gas and inert gas respectively. Optionally, the first gas pipe 211 can be used to introduce reaction gas, and the second gas pipe 212 can be used to introduce inert gas. It can be understood that the types of gas introduced into the first gas pipe 211 and the second gas pipe 212 can be exchanged according to actual process requirements, or both gas pipes can be introduced into reaction gas.

[0075] Since the zoned film forming can cause uneven gas distribution when the gas is discharged, it not only causes the uneven distribution of the thin film material on the wafer, resulting in the wafer warping deformation, but also the uneven gas discharge mode can cause the wafer surface to have a spray mark after the gas is sprayed to the wafer surface, thereby directly affecting the quality of the thin film. In view of this, the present application further provides a three-stage shunt gas discharge mode, which can realize the uniform distribution of the sprayed gas on the target area of the back surface of the wafer 70.

[0076] Specifically, please refer to Figure 3 , Figure 3 a structural schematic view of a base surface according to some embodiments of the present application is shown.

[0077] As Figure 3As shown, in some embodiments of this utility model, a gas distribution channel 300 may be provided on the surface of the base 120. The gas distribution channel 300 may include at least two channels 310 extending from the center of the surface of the base 120 to the edge, so as to perform primary gas separation of the reactive gas and the inert gas, and to transport them separately.

[0078] In some alternative embodiments, the beginning 311 of the flow channel may be connected to a gas tube, while the end 312 of the flow channel may extend to the edge of the surface of the base 120 so that the reactive gas or inert gas flows toward the edge of the surface, while the inert gas or reactive gas in another gas tube flows from the center of the surface.

[0079] For example, such as Figure 3 As shown, the center of the surface of the base 120 may include a central vent 320, which can be connected to a first gas pipe 211. The reactant gas is output from the central vent area 131 of the heating plate 110 via the central vent 320. A second gas pipe 212 can be connected to the gas distribution channel 300. The inert gas provided by the second gas pipe 212 can be split into two paths at the beginning 311 of the distribution channel 300, flowing towards the edge of the base 120. This is used to output inert gas from the two side vent areas 132 and 133 of the heating plate 110, thereby completing the primary separation of reactant gas and inert gas on the surface of the base 120.

[0080] Please continue to return Figure 2 In some embodiments of this invention, the heating plate 110 may include a flow divider 400, which may be disposed above the base 120. The flow divider 400 may include multiple dividing zones, each of which may include different hole distributions. It can be used to receive the reactive gas and inert gas transmitted via the flow divider channel 300, and to perform secondary gas separation, separating the gas paths leading to different areas. By separating the transmission of the reactive gas and inert gas, it is beneficial to perform subsequent partitioned film formation on the back side of the wafer 70.

[0081] Specifically, please refer to Figure 4A and 4B , Figure 4A and 4B Schematic diagrams of two flow dividers provided according to some embodiments of the present invention are shown.

[0082] Optionally, such as Figure 4AAs shown, in some embodiments, the flow divider 400a may include two centrally symmetrical vent channels 410a, which divide the flow divider 400a into a central boundary region 421 and two side boundary regions 422 located on either side of it. The central boundary region 421 may include guide holes 430. Through the guide holes 430 in the central boundary region 421 and the vent channels 410a and 410b located in the side boundary regions 422, the reactant gas and the inert gas can be transported separately through the guide holes 430 and the vent channels 420a and 410b, respectively.

[0083] Optionally, such as Figure 4B As shown, in some other embodiments, the two-sided boundary region 422 of the flow divider 400b may also include multiple air channels 410b to form an air channel array 411, so as to improve the uniformity of the reactant gas or inert gas passing through the two-sided boundary region 422 during the transmission process.

[0084] Furthermore, continue as Figure 2 As shown, in some optional embodiments, a first baffle 230 may be included between the end 312 of the flow channel 300 of the base 120 and the flow divider 400. The first baffle 230 can be used to reduce the flow rate of the reactant gas or inert gas flowing to the two boundary zones 422, which is beneficial to uniform gas output.

[0085] Continue as Figure 2 As shown, in some embodiments of this utility model, the heating plate 110 may further include a perforated plate 500. The perforated plate 500 may be disposed above the flow divider plate 400. Specifically, please refer to... Figure 5A , 5B 5C Figure 5A , 5B Figures 5C and 5C respectively show structural schematic diagrams of three perforated plates provided according to some embodiments of the present invention.

[0086] by Figure 5A For example, the orifice plate 500a can be divided into three gas distribution zones via the partition channel 530a, corresponding to the positions of the central boundary zone 421 and the two side boundary zones 422 in the flow distribution plate 400, respectively. This is used to perform three-stage gas distribution of the reactive gas and inert gas output through the central boundary zone 421 and the two side boundary zones 422, so that they are evenly distributed in multiple areas on the back side of the wafer 70.

[0087] Optionally, such as Figure 5A As shown, in some embodiments, the shapes of the central gas equalization zone 510a and the two side gas equalization zones 520a in the orifice plate 500a can be the same as the shapes of the central dividing zone 421 and the two side gas equalization zones 520 in the flow divider 400. For example, Figure 5A The orifice plate 500a in the middle can be withFigure 4B The middle flow distribution plate 400b is matched to carry out secondary gas distribution and tertiary gas distribution.

[0088] As shown in Figure 5B and Figure 5C In some other optional embodiments, the shapes of the central uniform gas distribution area 510b, 510c and the two side uniform gas distribution areas 520b, 520c in the orifice plate 500b, 500c can also be different from the shape of the central boundary area 421 and the two side uniform gas distribution areas 520 in the flow distribution plate 400. For example, Figure 5B The middle orifice plate 500b can be matched with Figure 4A or the flow distribution plate 400a or 400b in 4B to carry out secondary gas distribution and tertiary gas distribution, and Figure 5C The orifice plate 500c in Figure 4A or the flow distribution plate 400a or 400b in 4B to carry out secondary gas distribution and tertiary gas distribution.

[0089] Those skilled in the art can understand that the division of the shape, area and number of the boundary areas in the flow distribution plate 400 and the division of the shape, area and number of the uniform gas distribution areas in the orifice plate 500 are only a non-limiting embodiment provided by the present application, which aims to clearly demonstrate the main idea of the present application and provide a specific scheme for the public to implement, rather than to limit the protection scope of the present application. Alternatively, in other embodiments, those skilled in the art can also divide the flow distribution plate 400 and the orifice plate 500 into a corresponding number of boundary areas and uniform gas distribution areas based on the idea of the present application, and the shapes and areas of the boundary areas and the uniform gas distribution areas do not need to be equal, as long as the number of each other is the same and the positions correspond.

[0090] Further, continuing to Figure 2 In some optional embodiments, a second baffle plate 240 can also be included between the central boundary area 421 of the flow distribution plate 400 and the orifice plate 500. The second baffle plate 240 can be used to reduce the flow rate of the reaction gas or inert gas flowing to the central uniform gas distribution area 510 of the orifice plate 500.

[0091] As shown in Figure 2As shown, the assembly of the components in the film stress adjustment device 100 can include the following processes. First, the first baffle 230 can be coupled to the base 120 by screwing, and then the second baffle 240 can be bolted to the shunt plate 400. After that, the orifice plate 500 in the heating disc 110 and the shunt plate 400 can be screwed to the base 120 of the heating disc body and pre-tightened by a certain pressure. After the heating element 220 (such as a resistance wire) is installed, the heating element 220 can be fixed by welding the cover plate 221. Finally, the entire film stress adjustment device 100 can be installed into the process equipment of the semiconductor device. Alternatively, vacuum brazing / EBW welding can be used instead of screwing after mass production.

[0092] Because the reaction gas sprayed onto the wafer surface is not uniform, the distribution of the film material on the wafer is not uniform, and the wafer may also be warped. The zoned film formation may cause uneven gas distribution when the gas is output, and even the problem of spraying marks formed on the wafer surface. Therefore, in the above embodiments of the utility model, by adopting the three-stage gas distribution mode, the uniformity of the reaction gas output from the surface of the heating disc 110 can be greatly improved, so that the film material on the first deformation area on the back of the wafer 70 is uniformly distributed, a uniform second film can be generated, a uniform downward pulling stress is provided to the first deformation area, and the gas spraying mark problem on the wafer surface can be improved, and a high-quality film is obtained.

[0093] Specifically, according to the combination of the shunt plate 400 and the orifice plate 500, zoned film formation on the back of the wafer can be realized, and the thickness of the film formed in each zone can be controlled, and different types of films can also be deposited. For example, by controlling the gas in the first gas pipe 211 and the second gas pipe 212, and combining the change of the radio frequency energy, the second film can provide the required tensile stress / compressive stress on the back of the wafer, so that the wafer produces a deformation recovery similar to a saddle surface. In addition, by adopting the three-stage gas distribution mode and adding small baffles (the first baffle 230 and the second baffle 240), the gas spraying mark problem on the wafer surface can be effectively improved.

[0094] In terms of the shape of zoned film formation, by adopting the assembled structure of the baffle, the shunt plate and the orifice plate, different baffles, shunt plates (400a and 400b in 4A and 4B) and orifice plates (500a, 500b and 500c in 5A, 5B and 5C) can be matched, so as to realize various zoned deposition film solutions, and facilitate subsequent continuous improvement process (CIP) and reduce subsequent design iteration time. Figure 4A and 4B and Figure 5A , 5B and 5C, the orifice plates 500a, 500b and 500c), so as to realize various zoned deposition film solutions, and facilitate subsequent continuous improvement process (CIP) and reduce subsequent design iteration time.

[0095] Considering the diffusion of the gas and the distance between the heating disc 110 and the back surface of the wafer, different orifice plates 500 can be designed to cooperate with the shunt plate 400 to achieve the same effect, that is, the deposited film in the central region of the back surface of the wafer can be clearly demarcated from the deposited films on both sides. The film stress adjusting device 100 in the utility model can be used to perform zoned film deposition on the back surface of the wafer according to process requirements, thereby improving the warping deformation problem of the wafer in a targeted manner.

[0096] Next, the working principle of the film stress adjusting device 100 will be further introduced in combination with a film stress adjusting method. Please refer to Figure 6 , Figure 6 A flowchart of a film stress adjusting method according to some embodiments of the utility model is shown.

[0097] As shown in Figure 6 some embodiments of the utility model, before the film stress adjusting process is performed, the temperature of the process environment in the reaction cavity can be adjusted to 200-500℃, the pressure in the reaction cavity can be adjusted to 1-10 torr, preferably less than 5 torr, and the temperature of the resistance wire in the heating disc 110 can be adjusted to 300-450℃. The film stress adjusting method can include the following steps.

[0098] Firstly, step S610 can be performed: obtaining the warping condition of the wafer with a front surface coated with a film.

[0099] In some optional embodiments, when the front surface of the wafer in the reaction cavity completes the deposition of the first film, the warping condition of the wafer with a front surface coated with a film can be obtained by a detection device.

[0100] Subsequently, step S620 can be performed: in response to the first deformation region in the wafer due to the warping of the first film stress on the front surface, the reaction gas is output from the gas outlet area of the heating disc below the first deformation region via the film stress adjusting device to deposit a second film on the first deformation region of the back surface of the wafer, and the first deformation region recovers the deformation via the downward tensile stress provided by the second film.

[0101] Specifically, the film stress adjusting device 100 can be understood in combination with Figure 2 and Figure 7 , Figure 7 A gas flow distribution path schematic diagram of the film stress adjusting device according to some embodiments of the utility model is shown.

[0102] As shown in Figure 2 and Figure 7As shown, in some optional embodiments, the surface of the heating pad 110 may include a central vent region 131 and two vent regions 132, 133 located on either side of it. When a deformation of the wafer 70, characterized by a central depression and lateral warping, is detected, the lateral regions of the wafer 70 can be identified as the first deformation region. The controller can control the output of reactive gases from the lateral vent regions 132, 133 of the heating pad 110 to deposit a second thin film on the lateral regions of the back side of the wafer 70. The uniform downward tensile stress provided by the second thin film can reduce the warping of the lateral regions of the wafer, allowing its deformation to recover.

[0103] Optionally, the reaction gas can be silane, used to deposit silicon-containing thin films such as silicon nitride and silicon oxide as a second thin film.

[0104] Furthermore, such as Figure 7 As shown, in some preferred embodiments, when reactive gas is introduced into the two gas outlet areas 132 and 133 of the heating plate 110 via the first gas pipe 211 in the thin film stress adjustment device 100, inert gas can be simultaneously introduced into the central gas outlet area 131 of the heating plate 110 via the second gas pipe 212. Since the area above the central gas outlet area 131 in the heating plate 110 corresponds to the second region of the wafer 70 that has not undergone warping deformation, a protective layer can be formed below the second region by outputting inert gas to prevent reactive gas from diffusing into the second region on the back side of the wafer 70, thus forming a film in the second region. In this embodiment, by simultaneously introducing reactive gas and inert gas, the distribution area of ​​reactive gas can be precisely controlled, thereby limiting the deposition range of the second thin film.

[0105] Specifically, such as Figure 7As shown, the heating disc 110 in the film stress adjustment device 100, and the orifice plate 500, the first baffle 230, the second baffle 240, and the flow distribution plate 400 inside the heating disc 110 are generally made of aluminum alloy. The first gas 710 can be an inert gas, and the second gas 720 can be a reaction gas. The first gas 710 and the second gas 720 can enter the heating disc 110 from different gas paths inside the base 120, respectively. The first gas 710 enters the central gas outlet hole 320 on the surface of the base 120 from the first gas pipe 211 of the base 120, and then directly enters the heating disc 110. Then, the first gas 710 passes through the flow guide hole 430 of the flow distribution plate 400, and after the flow rate is reduced by the second baffle 240, it reaches the second area on the back of the wafer 70 from the central uniform gas area 510 of the orifice plate 500. While the second gas 720 enters the gas flow channel 300 on the surface of the base 120 from the second gas pipe 212 of the base 120, and after being divided into two by the gas flow channel 300, it flows to the two side edges of the base 120. Then, the second gas 720 enters the flow distribution plate 400 after the flow rate is reduced by the second baffle 240. The second gas 720 is uniformly output to the orifice plate 500 through the plurality of gas hole channels 410 in the two side boundary areas 422 in the flow distribution plate 400, and then is subjected to three-stage gas distribution by the orifice plate 500, and flows to the first deformation area on the back of the wafer 70 from the two side uniform gas areas 520 of the orifice plate 500.

[0106] Further, please refer to Figure 8 , Figure 8 The figure shows the distribution of the silane quality on the back of the wafer during the adjustment of the film stress according to some embodiments of the present application.

[0107] As Figure 8 shown in the second figure, the A area on the back of the wafer 70 is the first deformation area, corresponding to the central gas outlet area 131 on the surface of the heating disc 110, while the B area and the C area are the second area, corresponding to the two side gas outlet areas 132 and 133 on the surface of the heating disc 110. The reaction gas silane can be distributed in the B area and the C area on the back of the wafer 70, while the inert gas nitrogen can be distributed in the A area on the back of the wafer 70. Alternatively, when the wafer 70 is of a size of 300 mm in diameter, the range of the A area can reach 150 mm.

[0108] In some alternative embodiments, when a deformation of the wafer 70, characterized by central warping and concave sides, is detected, the central region of the wafer 70 can be identified as the first deformation region. The controller can control the output of reactive gas from the central vent region 131 of the heating plate 110 to deposit a second thin film in the central region on the back side of the wafer 70. Simultaneously, the controller can also control the output of inert gas from the vent regions 132 and 133 on both sides of the heating plate 110 to form a protective layer beneath the non-warped regions on both sides of the wafer 70, preventing the reactive gas from diffusing into the second region on the back side of the wafer 70, where a film is formed. Figure 7 As shown, the first gas 710 can be a reactive gas, while the second gas 720 can be an inert gas. The specific gas flow distribution paths of the first gas 710 and the second gas 720 have been described in detail above and will not be repeated here. The uniform downward tensile stress provided by the second thin film can reduce the warpage at the center of both sides of the wafer, allowing its deformation to recover.

[0109] like Figure 8 As shown in the first figure, region A on the back side of wafer 70 is the second region, corresponding to the central vent region 131 on the surface of heating pad 110, while regions B and C are the first deformation regions, corresponding to the vent regions 132 and 133 on the sides of the surface of heating pad 110. The reactive gas silane can be distributed in region A on the back side of wafer 70, while the inert gas nitrogen can be distributed in regions B and C on the back side of wafer 70. Optionally, when wafer 70 has a diameter of 300 mm, the range of region A can reach 150 mm.

[0110] exist Figure 7 In the embodiment shown, although the first gas 710 and the second gas 720 enter the heating plate 110 at the same time, the two gases can be clearly separated by the gas distribution channel 300 in the base 120 and the isolation channel 530 in the perforated plate 500, making them less likely to mix during the transmission process, so that they will not diffuse and fuse when they finally reach the back side of the wafer 70.

[0111] Furthermore, in some embodiments, when irregular warping deformation is detected on wafer 70, the entire surface of wafer 70 can be identified as the first deformation region. At this time, both the first gas pipe 211 and the second gas pipe 212 within the base 120 are supplied with a reactive gas, such as silane. Then, the controller can control multiple outlet zones of the heating plate 110 to output the reactive gas, thereby depositing a second thin film over the entire back surface of wafer 70.

[0112] Preferably, according to the first embodiment of outputting inert gas in the center gas outlet area 131 of the heating disc 110 and outputting reactive gas in the two side gas outlet areas 132, 133, the second embodiment of outputting reactive gas in the center gas outlet area 131 of the heating disc 110 and outputting inert gas in the two side gas outlet areas 132, 133, and the third embodiment of outputting reactive gas in the center gas outlet area 131 and the two side gas outlet areas 132, 133 of the heating disc 110, different orders of combination and superposition can be made for the three combinations, so that the film thickness on the back of the wafer can be further controlled and different stress and strain effects can be generated. In the utility model, the thickness and uniformity of the film deposition in different areas can be controlled through appropriate partition structure.

[0113] Further, as shown in some preferred embodiments, the step S620 can further include steps S621-S623. Figure 9

[0114] Specifically, the step S621 can be performed, and the controller can determine the target thickness of the second film according to the warping degree of the wafer 70. Then, the step S622 can be performed, and the controller can determine the gas time of the reactive gas based on the target thickness, wherein the film thickness of the second film is proportional to the gas time of the reactive gas. After that, the controller can continuously input the reactive gas into the gas outlet area of the heating disc 110 below the first deformation area of the wafer 70 according to the gas time, so as to deposit the second film with the target thickness on the back of the wafer in the first deformation area.

[0115] Although the above methods are illustrated and described as a series of acts for simplicity of explanation, it will be appreciated and understood that the methods are not limited by the order of acts, as some acts can occur in different orders and / or concurrently with other acts from that shown and described herein. In one or more embodiments, the elements of the methods can be performed in different order, and / or concurrently, and the method can include additional or different elements.

[0116] In summary, the utility model provides a kind of adjustment device of film stress and a kind of process equipment of semiconductor device, can be aimed at improving the deformation problem of film-coated wafer due to the film stress of front, improve the stability of product.

[0117] The foregoing description of the present disclosure has been provided for purposes of enabling any person skilled in the art to make or use the present disclosure. Various modifications to the present disclosure will be readily apparent to those skilled in the art, and the generic principles defined herein can be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the present disclosure is not intended to be limited to the examples described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.​

Claims

1. A device for adjusting thin film stress, characterized in that, The base includes several tubes, wherein a first tube is connected to a reaction gas, and The heating plate is provided with a plurality of gas outlets corresponding to the back surface of the wafer, and When the wafer has a first deformation area due to the stress of the first film on the front surface, the reaction gas is output from the gas outlet below the first deformation area to deposit a second film on the back surface of the wafer, and the first deformation area is provided with a downward tensile stress by the second film to restore the deformation. The second tube in the base is connected to an inert gas, and the adjusting device further includes:

2. The adjustment device of claim 1, wherein The gas distribution channel is provided on the surface of the base and includes at least two flow channels extending from the center of the surface to the edge, so that the reaction gas and the inert gas are separated and transmitted. The beginning of the flow channel is connected to the tube, and the end extends to the edge of the surface, so that the reaction gas or the inert gas is transmitted to the edge of the surface, and the inert gas or the reaction gas in the other tube is transmitted from the center of the surface.

3. The adjustment device of claim 2, wherein The heating plate includes a flow distribution plate, which includes a plurality of division areas, and each division area is provided with different hole distribution for receiving the reaction gas and the inert gas transmitted by the gas distribution channel and performing secondary gas distribution.

4. The adjustment device of claim 2, wherein The flow distribution plate includes two center-symmetric gas channels to divide the flow distribution plate into a center division area and two side division areas on both sides of the center division area, and the center division area includes a flow guide hole to separate the transmission of the reaction gas and the inert gas.

5. The adjustment device of claim 4, wherein The two side division areas include a plurality of gas channels to form a gas channel array for uniform transmission of the reaction gas or the inert gas flowing through the two side division areas.

6. The adjustment device of claim 5, wherein The flow channel end of the gas distribution channel and the flow distribution plate include a first baffle to reduce the flow rate of the reaction gas or the inert gas flowing to the two side division areas.

7. The adjustment device of claim 5, wherein The heating plate further includes a hole plate above the flow distribution plate, which is divided into three uniform gas areas by a partition channel to correspond to the center division area and the two side division areas on both sides of the center division area in the flow distribution plate, and to perform tertiary gas distribution on the reaction gas and the inert gas output by the center division area and the two side division areas to uniformly output to the plurality of areas on the back surface of the wafer.

8. The adjustment device of claim 5, wherein The center division area of the flow distribution plate and the hole plate further include a second baffle to reduce the flow rate of the reaction gas or the inert gas flowing to the center uniform gas area of the hole plate.

9. The adjustment device of claim 8, wherein The reaction chamber, and 10. A process apparatus for a semiconductor device, characterized by comprising: The film stress adjusting device according to any one of claims 1-9 is located in the reaction chamber, and the wafer with a film on the front surface is placed on the heating plate of the adjusting device to restore the deformation of the first deformation area due to the stress of the first film on the front surface. ​ ​ ​

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