Process chamber and thin film deposition equipment of semiconductor device

Abstract

The utility model provides a process chamber and thin film deposition equipment of a semiconductor device. The process chamber comprises a plurality of wafer trays which are synchronously lifted up and down in a macro manner in the process chamber; and the first adjusting mechanism is used for performing fine adjustment on the wafer trays in the vertical direction, performing lifting adjustment on the thin film deposition equipment at the same time and performing independent adjustment on the multiple thin film deposition stations, so that the precision of thin film deposition is improved.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of semiconductor manufacturing, especially relates to a process chamber and a thin film deposition equipment of semiconductor device. BACKGROUND

[0002] Thin film deposition is one of the core processes of the front-end manufacturing of semiconductor manufacturing, and different thin film deposition technologies such as chemical vapor deposition (CVD), atomic layer deposition (ALD) and physical vapor deposition (PVD) are generally required to meet different needs. Among them, the lifting of the thin film deposition equipment is a necessary step in the manufacturing process.

[0003] In the prior art, a motion lifting assembly is usually used to adjust the lifting of the thin film deposition equipment. However, due to the high performance and high reliability of some device manufacturing, the precision requirement of the process is high, which leads to the improvement of the precision and reliability requirement of the height adjustment of the thin film deposition equipment.

[0004] In order to overcome the above-mentioned defects existing in the prior art, the utility model needs a process chamber for simultaneously adjusting the lifting of the thin film deposition equipment and individually adjusting multiple thin film deposition stations, thereby improving the precision of thin film deposition. SUMMARY

[0005] The following gives a brief summary of one or more aspects to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all contemplated aspects, and neither is it intended to identify key or critical elements of all aspects nor to delineate the scope of any or all aspects. Its only purpose is to give some concepts of one or more aspects in a simplified form before the more detailed description is given later.

[0006] In order to overcome the above-mentioned defects existing in the prior art, the utility model provides a process chamber and a thin film deposition equipment of semiconductor device for simultaneously adjusting the lifting of the thin film deposition equipment and individually adjusting multiple thin film deposition stations, thereby improving the precision of thin film deposition.

[0007] Specifically, according to the process chamber provided by the utility model in the first aspect, the process chamber comprises: a plurality of wafer trays which are synchronously macro-lifted in the up-down direction in the process chamber; and a plurality of first adjusting mechanisms which are respectively used for micro-adjusting the corresponding wafer trays in the up-down direction.

[0008] Further, in some embodiments of the utility model, the first adjusting mechanism includes fixed part, the fixed part includes: first base plate, first end fixedly connected with wafer tray, for driving it to carry out the fine adjustment.

[0009] Further, in some embodiments of the utility model, the fixed part further includes second base plate, the first adjusting mechanism further includes adjusting part, wherein, the adjusting part includes third base plate, height adjusting screw and first fixed screw, the third base plate is connected with the first end of second base plate, the second end of second base plate is slidably connected with the second end of first base plate;The height adjusting screw is installed on the third base plate and is in threaded connection with the first base plate, for via the first base plate to the fine adjustment of thin film deposition work position, the first fixed screw is installed on the third base plate and is connected with the second base plate, for fixing the second base plate in the adjusting part, to support the first base plate.

[0010] Further, in some embodiments of the utility model, the wafer tray is lifted along with the height adjusting screw in the first direction and is lowered along with the height adjusting screw in the second direction opposite to the first direction.

[0011] Further, in some embodiments of the utility model, the adjusting part further includes: second fixed screw, is connected with the third end of first base plate, for locking the wafer tray after adjustment.

[0012] Further, in some embodiments of the utility model, the first base plate is further provided with limiting hole, and the adjusting part further includes: positioning pin, is arranged on the third base plate, for cooperating with the limiting hole, the first base plate is guided and is positioned in the up-down direction.

[0013] Further, in some embodiments of the utility model, the process chamber further includes: connecting plate, fixedly connected with the multiple wafer trays, to make each wafer tray in the process chamber synchronous macro motion lifting along the up-down direction.

[0014] Further, in some embodiments of the utility model, the process chamber further includes: second adjusting mechanism, including backplate fixed plate and drive motor, wherein, the backplate fixed plate is arranged on the inner wall of process chamber, for supporting the drive motor, and the drive motor is used to drive the connecting plate and drive the multiple wafer trays to carry out the synchronous macro motion lifting.

[0015] Further, in some embodiments of the utility model, the wafer tray is configured with heating element, for carrying and heating the wafer, to carry out thin film deposition process to the wafer.

[0016] Furthermore, in some embodiments of this utility model, the plurality of first adjustment mechanisms have different micro-adjustment amounts on the plurality of wafer trays.

[0017] Furthermore, the thin film deposition apparatus for semiconductor devices provided according to the second aspect of the present invention includes at least one process chamber as described in any one of the first aspects of the present invention. Attached Figure Description

[0018] The above-described features and advantages of this invention can be better understood after reading the following detailed description of the embodiments of this disclosure in conjunction with the accompanying drawings. In the drawings, the components are not necessarily drawn to scale, and components having similar related characteristics or features may have the same or similar reference numerals.

[0019] Figure 1 A schematic diagram of the structure of a process chamber provided according to some embodiments of the present invention is shown.

[0020] Figure 2 A schematic diagram of the structure of a first adjustment mechanism provided according to some embodiments of the present invention is shown.

[0021] Figure label:

[0022] 10 wafer trays

[0023] 20 First Regulatory Agency

[0024] 21 First substrate

[0025] 22 Second substrate

[0026] 23 Third substrate

[0027] 24 Height Adjustment Screws

[0028] 25 First fixing screw

[0029] 26 Second fixing screw

[0030] 27 Positioning pins

[0031] 30 Second Regulation Agency

[0032] 31 Backplate fixing plate

[0033] 32 drive motors

[0034] 40 Connecting plate Detailed Implementation

[0035] The following describes the embodiments of the present application by specific examples, and those skilled in the art can easily understand other advantages and effects of the present application from the disclosure. Although the description of the present application will be introduced in combination with the preferred embodiments, it does not mean that the features of the present application are limited to the embodiments. On the contrary, the purpose of introducing the present application in combination with the embodiments is to cover other options or modifications that can be extended based on the claims of the present application. In order to provide a deep understanding of the present application, many specific details will be included in the following description. The present application can also be implemented without using these details. In addition, in order to avoid confusion or obscure the focus of the present application, some specific details will be omitted in the description.

[0036] In the description of the present application, it should be noted that, unless otherwise explicitly specified and limited, the terms "mounting", "connection", "connecting" should be understood broadly, for example, it can be fixed connection, or detachable connection, or integrally connected; it can be mechanical connection, or electrical connection; it can be directly connected, or indirectly connected through intermediate medium, or the communication inside two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0037] In addition, "up", "down", "left", "right", "top", "bottom", "horizontal", "vertical" used in the following description should be understood as the orientation shown in the paragraph and the related drawings. Such relative terms are only for the convenience of description, and they do not mean that the devices described should be manufactured or operated in a particular orientation, so they should not be understood as a limitation of the present application.

[0038] It can be understood that although the terms "first", "second", "third" and the like can be used herein to describe various components, regions, layers and / or parts, these components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and / or parts. Therefore, the first component, region, layer and / or part discussed below can be called the second component, region, layer and / or part without deviating from some embodiments of the present application.

[0039] As described above, thin film deposition is one of the core processes of the front-end manufacturing of semiconductor manufacturing, and different thin film deposition technologies such as chemical vapor deposition (CVD), atomic layer deposition (ALD) and physical vapor deposition (PVD) are generally required to meet different needs. Among them, the lifting of the thin film deposition equipment is a necessary step in the manufacturing process.

[0040] In the prior art, the thin film deposition equipment is usually adjusted by a motion lifting assembly. However, due to the high performance and high reliability of device manufacturing, the precision requirement of the process is high, which leads to the improvement of the precision and reliability of the height adjustment of the thin film deposition equipment.

[0041] In order to overcome the above-mentioned defects in the prior art, the utility model needs a process chamber for simultaneously adjusting the thin film deposition equipment and individually adjusting multiple thin film deposition stations, thereby improving the precision of thin film deposition.

[0042] In some non-limiting embodiments, the process chamber provided in the first aspect of the utility model can be configured in the thin film deposition equipment of the semiconductor device provided in the second aspect of the utility model. Specifically, the thin film deposition equipment of the semiconductor device comprises at least one process chamber provided in the first aspect of the utility model. For details, please refer to Figure 1 , Figure 1 A structural schematic diagram of a process chamber provided according to some embodiments of the utility model is shown.

[0043] As shown in Figure 1 , the process chamber comprises multiple wafer trays 10 and multiple first adjustment mechanisms 20. The multiple wafer trays 10 are synchronously macro-moved up and down (for example, 0-150 mm) in the process chamber, and the macro-adjustment precision can be up to 1 mm level. The multiple first adjustment mechanisms 20 are respectively used for micro-adjusting the corresponding wafer trays 10 in the up and down direction (for example, 0-1 mm), and the micro-adjustment precision can be up to 0.01 mm level. Here, the wafer tray 10 is configured with a heating element for carrying and heating the wafer to perform the thin film deposition process on the wafer.

[0044] The process chamber can be synchronously macro-moved up and down. Specifically, the process chamber further comprises a connecting plate 40 and a second adjustment mechanism 30. The connecting plate 40 is fixedly connected with the multiple wafer trays 10, so that the wafer trays 10 are synchronously macro-moved up and down in the process chamber.

[0045] The second adjustment mechanism 30 comprises a back plate fixing plate 31 and a driving motor 32. The back plate fixing plate 31 is arranged on the inner wall of the process chamber for supporting the driving motor 32, and the driving motor 32 is used for driving the connecting plate 40 to drive the multiple wafer trays 10 to synchronously macro-move up and down.

[0046] Please refer to Figure 2 , Figure 2 A structural schematic diagram of a first adjustment mechanism 20 provided according to some embodiments of the utility model is shown.

[0047] AsFigure 2 As shown, the process chamber can adjust the height of each wafer tray 10 via the first adjusting mechanism 20. In this embodiment, the first adjusting mechanism 20 has different adjusting amounts for different wafer trays 10. Specifically, the first adjusting mechanism 20 includes a fixed part and an adjusting part. The fixed part includes a first base plate 21 and a second base plate 22, and the adjusting part includes a third base plate 23, a height adjusting screw 24, a first fixing screw 25, and a second fixing screw 26. The adjusting part can be detached from the fixed part, which reduces the weight of the device and improves flexibility.

[0048] The third base plate 23 is connected to the first end of the second base plate 22, and the second end of the second base plate 22 is slidingly connected to the second end of the first base plate 21. The height adjusting screw 24 is installed on the third base plate 23 and is threadedly connected to the first base plate 21, so as to adjust the height of the film deposition working position via the first base plate 21. The first fixing screw 25 is installed on the third base plate 23 and is connected to the second base plate 22, so as to fix the second base plate 22 to the adjusting part and support the first base plate 21. The second fixing screw 26 is connected to the third end of the first base plate 21, so as to lock the adjusted wafer tray 10.

[0049] In some embodiments, the wafer tray 10 is raised by rotating the height adjusting screw 24 in a first direction and is lowered by rotating the height adjusting screw 24 in a second direction opposite to the first direction.

[0050] Optionally, the first base plate 21 is further provided with a limiting hole for cooperating with a positioning pin 27 provided on the third base plate 23 of the adjusting part to guide and limit the movement of the first base plate 21 in the up-down direction.

[0051] The working principle of the process chamber will be described below in combination with some embodiments of the adjusting method of the process chamber. Those skilled in the art can understand that these embodiments of the adjusting method are only some non-limiting embodiments provided by the present application, which are intended to clearly demonstrate the main concept of the present application and provide some specific schemes for facilitating the public to implement, rather than to limit the overall function or overall working mode of the process chamber.

[0052] Specifically, in the film deposition process, there is usually a process error caused by assembly problems, which causes the actual process environment in the process chamber to deviate from the preset process conditions, thereby causing a slight error in the film thickness. In view of the above situation, it is not appropriate to change the control scheme of the macro-lifting. Therefore, the error amount can be first obtained by calibration experiments to determine the micro-adjusting amount, and the height of the wafer tray can be adjusted via the first adjusting mechanism according to the micro-adjusting amount.

[0053] Further, for multiple wafer trays arranged in the same process chamber, errors can cause the deposition effect of each wafer tray to be less consistent. In this way, the first adjusting mechanism and the adjusting method thereof can be used to adjust multiple wafer trays to be consistent.

[0054] In addition, for errors caused by factors such as temperature non-uniformity and / or non-uniform pumping in the process chamber, the process chamber can also be adjusted.

[0055] In summary, the process chamber and the thin film deposition equipment for semiconductor devices provided by the present application can be used to simultaneously adjust the thin film deposition equipment and individually adjust multiple thin film deposition stations, thereby improving the precision of thin film deposition.

[0056] Although the above-described methods are illustrated and described as a series of acts for simplicity, it will be appreciated and understood that the methods are not limited by the order of the acts, as some acts can occur in different orders and / or concurrently with other acts from that shown and described herein. In addition, not all illustrated acts can be required to implement the methods in accordance with one or more embodiments.

[0057] The foregoing description of the present disclosure has been presented for the purposes of illustration and description. It is not intended to be exhaustive or to limit the present disclosure to the precise form disclosed. Many modifications and variations are possible in light of the above teaching. It is intended that the scope of the present disclosure be limited not with this detailed description, but rather by the claims appended hereto.

Claims

1. A process chamber, characterized in that, include: Multiple wafer trays are synchronously macro-moved up and down in the process chamber; as well as Multiple first adjustment mechanisms are used to perform micro-adjustments in the vertical direction on corresponding wafer trays. Each first adjustment mechanism includes a fixing part and an adjustment part. The fixing part includes a first substrate and a second substrate, and the adjustment part includes a third substrate, a height adjustment screw, and a first fixing screw. The first end of the first substrate is fixedly connected to the wafer tray, which is used to drive the wafer tray to perform the micro-adjustment. The third substrate is connected to the first end of the second substrate, the second end of the second substrate is slidably connected to the second end of the first substrate, the height adjustment screw is installed on the third substrate and threadedly connected to the first substrate, and is used to perform the micro-adjustment of the thin film deposition working position via the first substrate, and the first fixing screw is installed on the third substrate and connected to the second substrate, and is used to fix the second substrate to the adjustment part to support the first substrate.

2. The process chamber as described in claim 1, characterized in that, The wafer tray rises as the height adjustment screw rotates in a first direction, and falls as the height adjustment screw rotates in a second direction opposite to the first direction.

3. The process chamber as described in claim 1, characterized in that, The adjustment unit further includes: The second fixing screw is connected to the third end of the first substrate and is used to lock the adjusted wafer tray.

4. The process chamber as described in claim 1, characterized in that, The first substrate is also provided with a limiting hole, and the adjustment part further includes: A positioning pin is provided on the third substrate to cooperate with the limiting hole and guide and limit the first substrate in the vertical direction.

5. The process chamber as described in claim 1, characterized in that, The process chamber further includes: A connecting plate is fixedly connected to the plurality of wafer trays so that each wafer tray can be synchronously macroscopically raised and lowered in the vertical direction within the process chamber.

6. The process chamber as described in claim 5, characterized in that, The process chamber further includes: The second adjustment mechanism includes a back plate fixing plate and a drive motor. The back plate fixing plate is disposed on the inner wall of the process chamber and is used to support the drive motor. The drive motor is used to drive the connecting plate to move the multiple wafer trays to perform the synchronous macro-motion lifting and lowering.

7. The process chamber as described in claim 1, characterized in that, The wafer tray is equipped with a heating element for supporting and heating the wafer to perform a thin film deposition process on the wafer.

8. The process chamber as described in claim 1, characterized in that, The plurality of first adjustment mechanisms have different micro-adjustment amounts for the plurality of wafer trays.

9. A thin film deposition apparatus for a semiconductor device, characterized in that, It includes at least one process chamber as described in any one of claims 1 to 8.

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