Wafer thinning device and system

Abstract

The utility model relates to the technical field of wafer processing, and discloses a wafer thinning device and system, which comprises a base, a rotary table arranged on the base and a main shaft support mechanism, the main shaft support mechanism comprises a support, a main shaft, an electromagnetic force module and a sliding unit, and the sliding unit comprises a connecting piece and a mounting seat which are matched with each other; the supporting seat is in sliding fit with the base, the connecting piece is arranged on the supporting seat, and the main shaft is arranged on the mounting seat; an electromagnetic force module is arranged between the main shaft and the support, and the electromagnetic force module can generate electromagnetic force and act on the main shaft; and the end part of the main shaft is used for mounting a machining tool, and the machining tool corresponds to the table top of the rotary table in position. The machining pressure can be adjusted, and the machining efficiency of the device can be improved.

Description

TECHNICAL FIELD

[0001] The utility model relates to wafer processing technical field more particularly, relates to a kind of wafer thinning device and system. BACKGROUND

[0002] In the processing of chip, wafer for preparing chip needs to experience the action of mechanical, physical field, chemical field and heat treatment for many times, these processes can make a lot of stress in wafer. To prevent wafer from producing crack and warping under the action of stress, affect the flatness of wafer and avoid wafer fragmentation, in the processing and preparation process of chip, the thickness of wafer needs to be maintained at a certain degree, and the larger the wafer diameter is, the greater the wafer thickness is. The current wafer thinning equipment has low processing efficiency, and the processing pressure is not easy to control, which leads to high difficulty in controlling the total thickness variation of wafer, thereby affecting the yield of workpiece product. SUMMARY

[0003] The utility model discloses to the technical problem existing in prior art, provide a kind of wafer thinning device and system, can improve the processing efficiency of device.

[0004] To solve the problems proposed above, the technical scheme adopted by the utility model is:

[0005] The utility model discloses a kind of wafer thinning device, including base, rotary table being set on the base, main shaft support mechanism, the main shaft support mechanism includes support, main shaft, electromagnetic force module and sliding unit, the sliding unit includes the connecting piece and mounting seat that cooperate with each other;

[0006] The support and base are slidingly fitted, the connecting piece is set on the support, and the main shaft is set on the mounting seat;Electromagnetic force module is provided between the main shaft and the support, and the electromagnetic force module can generate electromagnetic force and act on the main shaft;The end of the main shaft is used to install processing tool, and the processing tool corresponds to the position of the table surface of rotary table.

[0007] Further, it further includes power module and movable module set on the base, and the main shaft support mechanism is set on the movable module, and the main shaft support mechanism is connected with the power module.

[0008] Further, it further includes elastic member set between the mounting seat and the support, and the elastic member is elastically deformed along the axial direction of the main shaft, and can generate elastic force and act on the main shaft.

[0009] Further, the electromagnetic force module includes two electromagnetic force components spaced apart along the axial direction of the main shaft, one of the electromagnetic force components is set on the connecting piece, and the other electromagnetic force component is set on the support;Two electromagnetic force components can generate electromagnetic attraction or electromagnetic repulsion and act on the main shaft;

[0010] Further, the electromagnetic force assembly comprises a shell, a plurality of coils and a plurality of magnets arranged in the shell, the plurality of coils are arranged at intervals, and a plurality of magnets are arranged between adjacent coils; and each coil is provided with an iron core.

[0011] Further, the electromagnetic force module further comprises a buffer pad arranged between the two electromagnetic force assemblies.

[0012] Further, a first coil layer is arranged in the middle of the shell, a plurality of coil layers and a plurality of magnet layers are alternately arranged along the radial direction of the first coil layer, a plurality of coils are uniformly arranged in each coil layer; and a plurality of magnets are arranged between adjacent coil layers and between adjacent coils in each coil layer.

[0013] Further, a vacuum chuck for positioning a workpiece is arranged on the rotary table, and a pressure sensor for detecting the machining pressure is arranged on the rotary table.

[0014] Further, the spindle support mechanism further comprises an inclination adjusting ring arranged on the support and located at the outer periphery of the spindle.

[0015] The utility model also provides a wafer thinning system, including wafer thinning device, controller, power device, the controller connects pressure sensor and power device, and the controller adjusts the power supply of power device according to the machining pressure of pressure sensor acquisition;The power device connects the electromagnetic force module, and adjusts the current of electromagnetic force module.

[0016] Compared with the prior art, the utility model has the beneficial effects that:

[0017] The utility model sets up electromagnetic force module on the spindle, generates electromagnetic force through electromagnetic force module and acts on the spindle, can control the machining pressure of the spindle acting on the workpiece, because electromagnetic force has the advantages of high control precision, fast response speed and good repeatability, can realize effective control to machining pressure, improves the machining efficiency of device, also can realize the stable control to wafer thickness variation. BRIEF DESCRIPTION OF DRAWINGS

[0018] In order to more clearly illustrate the scheme in the utility model, the drawings needed in the embodiment description will be briefly introduced as follows, and obviously, the drawings in the following description are some embodiments of the utility model, and those skilled in the art can also obtain other drawings according to these drawings without creating creative labor. Among them:

[0019] Figure 1 It is the structure diagram of wafer thinning device in the utility model.

[0020] Figure 2 It is partial structure diagram of main shaft support mechanism in the utility model.

[0021] Figure 3 It is stress balance schematic view of main shaft in the utility model.

[0022] Figure 4 It is one example view of electromagnetic force module in the utility model.

[0023] Figure 5 It is principle view of wafer thinning system in the utility model.

[0024] Wherein, 100-wafer thinning device, 10-base, 20-rotary table, 40-power module, 50-movable module, 60-pressure sensor, 30-main shaft support mechanism, 31-support, 32-main shaft, 33-electromagnetic force module, 34-sliding unit, 35-elastic piece, 36-processing tool, 37-inclination adjusting ring, 331-housing, 332-coil, 333-magnet, 334-iron core, 200-controller, 300-power device. DETAILED DESCRIPTION

[0025] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this utility belongs; the terminology used in the description herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the utility, for example, the terms "length", "width", "upper", "lower", "left", "right", "front", "rear", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like specify relative positions according to the orientations shown in the drawings and are merely used for convenience in describing specific embodiments, and are not intended to limit the present technical solution.

[0026] The terms "include", "has" and any variations thereof in the specification and claims of the utility and the above description of drawings are intended to cover the non-exclusive inclusion; the terms "first", "second" and the like in the specification and claims of the utility or the above description of drawings are used to distinguish different objects, and are not used to describe a specific order. In the specification and claims of the utility and the above description of drawings, when an element is referred to as "fixed to" or "mounted to" or "set to" or "connected to" another element, it can be directly or indirectly on the other element. For example, when an element is referred to as "connected to" another element, it can be directly or indirectly connected to the other element.

[0027] Furthermore, reference being made herein to "embodiments" means that certain features, structures, or characteristics described in connection with an embodiment can be included in at least one embodiment of the utility model. The appearance of the phrase in various places in the specification does not necessarily all refer to the same embodiment, nor does it necessarily exclude other embodiments or alternative embodiments. It is explicitly and implicitly understood by those skilled in the art that an embodiment described herein can be combined with another embodiment.

[0028] Referring to Figure 1 and Figure 2 The utility model provides a wafer thinning device 100, including base 10, set up on the base 10 swivel table 20, main shaft support mechanism 30, power module 40, movable module 50, power module 40 connects main shaft support mechanism 30, and the movable module 50 is arranged between main shaft support mechanism 30 and base 10.

[0029] Main shaft support mechanism 30 includes support 31, main shaft 32, electromagnetic force module 33, sliding unit 34, sliding unit 34 includes the connecting piece 341 and the mounting seat 342 of mutual sliding cooperation, support 31 is connected with power module 40, and support 31 is matched with movable module 50, the connecting piece 341 is set up on support 31, main shaft 32 is set up on mounting seat 342, and electromagnetic force module 33 is equipped with between main shaft 32 and support 31, and electromagnetic force module 33 can generate electromagnetic force and act on main shaft 32, the end of main shaft 32 is used to install processing tool 36, and processing tool 36 corresponds with the table surface position of swivel table 20.

[0030] In the embodiment, the main shaft support mechanism 30 and the base 10 are slidably connected through the movable module 50, which facilitates the adjustment of the center of gravity of the main shaft support mechanism 30 and the control of the feeding movement of the main shaft support mechanism 30. During the translation of the main shaft support mechanism 30 along the processing direction, the power module 40 is connected to the main shaft support mechanism 30, which can reduce the load, and the electromagnetic force module 33 generates electromagnetic force acting on the main shaft 32, so that the processing pressure of the main shaft support mechanism 30 acting on the wafer can be conveniently controlled during the translation of the main shaft support mechanism 30 and the main shaft 32, thereby improving the processing efficiency of the device.

[0031] In an embodiment, the main shaft support mechanism 30 further includes an elastic member 35, which is arranged between the support 31 and the connecting piece 341. The elastic member 35 can be elastically deformed along the axial direction of the main shaft 32, and the elastic force generated by the elastic member 35 acts on the main shaft 32.

[0032] Specifically, the electromagnetic force module 33 and the elastic member 35 are respectively arranged at opposite ends of the connecting piece 341 along the axial direction of the main shaft 32, the electromagnetic force module 33 is arranged between the upper end of the connecting piece 341 and the support 31, and the elastic member 35 is arranged between the lower end of the connecting piece 341 and the support 31, so that the overall structure of the machining device is compact, and interference between the electromagnetic force module 33 and the elastic member 35 during operation can be avoided. Understandably, the positions of the electromagnetic force module 33 and the elastic member 35 can also be adjusted according to actual needs, that is, the elastic member 35 is arranged at the upper end of the connecting piece 341, and the electromagnetic force module 33 is arranged at the lower end of the connecting piece 341. The elastic member 35 can also be arranged in multiple groups and along the circumferential direction of the main shaft 32 according to actual needs, so that the elastic force received by the main shaft 32 is uniform.

[0033] In this embodiment, the main shaft support mechanism 30 is driven by the external driving mechanism to move towards the rotary table 20, and the machining tool 36 acts on the surface of the wafer to perform machining. As the main shaft support mechanism 30 moves downward as a whole and the main shaft 32 acts on the surface of the workpiece to perform machining, the main shaft 32 will be subjected to the upward force F1 (equal to the machining pressure F) of the workpiece, the elastic force N of the elastic member 35, the sliding friction force f of the sliding unit 34, and the gravity F G During the process of reducing the thickness of the workpiece, the sliding friction force f, the elastic force N and the force F1 will change, the electromagnetic force module 33 is controlled to generate an electromagnetic force acting on the main shaft 32, and the size of the machining pressure can be controlled under the condition of ensuring the force balance of the main shaft 32, as shown in Figure 3

[0034] Understandably, during the actual machining of the wafer, the main shaft 32 can be selected by selecting appropriate sliding units 34 and elastic members 35 to minimize the influence of the friction force f of the sliding unit 34 and the elastic force N on the machining pressure of the main shaft 32, so that the machining pressure can be adjusted and controlled by controlling the electromagnetic force generated by the electromagnetic force module 33, and the adjustment accuracy can be ensured.

[0035] In an embodiment, the electromagnetic force module 33 includes two electromagnetic force components 330 arranged along the axial direction of the main shaft 32, one of which is arranged on the connecting piece 341, and the other is arranged on the support 31. The two electromagnetic force components can generate electromagnetic attraction or repulsion, which acts on the main shaft 32 to adjust the machining pressure of the main shaft 32 on the surface of the workpiece.

[0036] ​The electromagnetic force assembly 330 comprises a housing 331, a plurality of coils 332 arranged in the housing 331 and a plurality of magnets 333, the plurality of coils 332 are arranged at intervals, and the plurality of magnets 333 are arranged between adjacent coils 332, so that uniform electromagnetic force is generated in the electromagnetic force assembly 330, and the magnetic fields generated by the coils 332 and the magnets 333 can be effectively superimposed.

[0037] Each of the coils 332 is provided with an iron core 334, and the iron core 334 is magnetized in the magnetic field generated by the coil 332 after the coil 332 is energized, which can strengthen the magnetic induction intensity of the magnetic field generated by the coil 332, and further enhance the electromagnetic force between the two electromagnetic force assemblies (330a, 330b).

[0038] Specifically, the coil 332 generates a magnetic field after being energized, and the magnet 333 itself has magnetism and has two poles with opposite polarities. After the coils 332 in the two electromagnetic force assemblies (330a, 330b) are energized, the two electromagnetic force assemblies (330a, 330b) opposite to each other are located in the magnetic field range of the other and generate mutual electromagnetic force, and the coils 332 in the two electromagnetic force assemblies (330a, 330b) are energized with currents in the same direction, so that the electromagnetic force module 33 generates electromagnetic attraction force, and vice versa. The coils 332 in the two electromagnetic force assemblies (330a, 330b) are energized with currents in opposite directions, so that the electromagnetic force module 33 generates electromagnetic repulsion force. By adjusting the size of the current flowing through the coils 332 in the two electromagnetic force assemblies (330a, 330b), the size of the electromagnetic attraction force or the electromagnetic repulsion force generated by the electromagnetic force module 33 can be adjusted. Since the magnetic field generated by the magnet 333 is superimposed with the magnetic field generated by the adjacent coil 332, the electromagnetic force between the coils 332 is increased, and the electromagnetic force acting on the magnet 333 is in the same direction as the electromagnetic force acting on the coil 332 and can be superimposed, which increases the processing pressure range that can be adjusted by the electromagnetic force adjusting device.

[0039] In an embodiment, a buffer pad (not shown in the figure) is further arranged between the two electromagnetic force assemblies 330, which can play a buffering role when the two electromagnetic force assemblies 330 collide suddenly due to the relative movement caused by the electromagnetic force.

[0040] Figure 4An example of the arrangement of the coils 332 and the magnets 333 in the electromagnetic force assembly 330 is shown. The middle part of the shell 331 is provided with a first coil layer 332a. A plurality of coil layers 332 and a plurality of magnet layers 333 are alternately arranged along the radial direction of the first coil layer 332a. That is, the outer periphery of the first coil layer 332a is provided with a second coil layer 332b and a third coil layer 332c in sequence. The second coil layer 332b and the third coil layer 332c are respectively provided with a plurality of uniformly arranged coils. A plurality of magnets 333 are arranged between the first coil layer 332a and the second coil layer 332b, between the second coil layer 332b and the third coil layer 332c, and between adjacent coils in each coil layer. When all the coils 332 are energized, the magnetic poles at the same end are the same, that is, the magnetic field directions generated by each coil 332 are the same. Each coil 332 is in the magnetic field range generated by the magnets 333, and the magnetic field generated by the magnets 333 can be superimposed with the magnetic field generated by each coil 332, thereby effectively increasing the adjustment range of the electromagnetic force module 33 to the machining pressure.

[0041] It can be understood that the number and arrangement of the coils 332 and the magnets 333 in the electromagnetic force assembly 330 can be set according to actual needs. The end magnetic poles of the facing coils 332 in the electromagnetic force assembly 330a and the electromagnetic force assembly 330b can be the same or different, which can ensure that the electromagnetic force assembly 330 generates reliable electromagnetic attraction or repulsion and acts on the main shaft 32.

[0042] In an embodiment, the rotary table 20 is provided with a pressure sensor 60 for detecting the machining pressure of the main shaft 32 acting on the workpiece. The rotary table 20 is also provided with a vacuum chuck 21 for reliably positioning the workpiece placed on the rotary table 20, so as to avoid the workpiece from being separated from the table surface of the rotary table 20 during the rotary machining process.

[0043] Specifically, the rotary table 20 is arranged on the base 10 through a rotary table seat 22, facilitating the installation and cooperation of the rotary table 20 and the base 10. A plurality of pressure sensors 60 are arranged between the rotary table seat 22 and the base 10, facilitating the detection of the machining pressure, so that the signal line is also easy to lead out.

[0044] In an embodiment, the main shaft support mechanism 30 further includes an inclination angle adjusting ring 37 arranged on the support 31 and located at the outer periphery of the main shaft 32, for adjusting the installation angle of the main shaft 32.

[0045] Specifically, by adjusting the installation angle of the main shaft 32, the installation angle of the machining tool 36 can be adjusted, and thus the reliability of the machining tool 36 acting on the wafer to be machined for machining is ensured. Generally, the axes of the main shaft 32 and the machining tool 36 are parallel to the axis of the rotary table 20, the rotary table 20 drives the wafer to rotate, the machining tool 36 acts on the wafer and feeds axially to complete the wafer thinning machining.

[0046] Referring to Figure 5 The utility model also provides a wafer thinning system, including wafer thinning device 100, controller 200, power device 300, controller 200 connects pressure sensor 60 and power device 300, and controller 200 adjusts the power supply of power device 300 according to the machining pressure collected by pressure sensor 60;The power device 300 connects the electromagnetic force module 30, and the current of the electromagnetic force module 30 is adjusted.

[0047] The system in the utility model connects wafer thinning device through controller 200, and according to the machining pressure collected by pressure sensor 60, and sends the pressure adjustment signal to power device 300, and power device 300 adjusts the current of electromagnetic force module 30 according to the pressure adjustment signal, realizes the adjustment of the electromagnetic force generated by electromagnetic force module 30, and realizes the adjustment of the machining pressure of main shaft 32 based on the stress balance of main shaft 32, thereby improving the effectiveness of machining pressure control, and ensuring machining precision and machining efficiency.

[0048] Specifically, the controller 200 includes a data acquisition module 201, a conversion calculation module 202, a pressure comparison module 203, and an adjustment module 204.

[0049] The data acquisition module 201 is configured to acquire the analog voltage signal detected by the pressure sensor 60.

[0050] The conversion calculation module 202 is configured to convert the voltage signal and calculate the current machining pressure.

[0051] The pressure comparison module 203 is configured to compare the current machining pressure with a set value to obtain a pressure difference between the two.

[0052] The adjustment module 204 is configured to output an adjustment signal to the power device 300 according to the relationship between the pressure difference, the determined electromagnetic force, and the machining pressure.

[0053] The power supply device 300 controls the current size of the electromagnetic force module 33 according to the adjustment signal, changes the electromagnetic force of the electromagnetic force module 33 acting on the main shaft 32, and further changes the size of the machining pressure.

[0054] Specifically, by adjusting the electromagnetic force of the electromagnetic force module 33, the size of the machining pressure can be adjusted, the high-precision and rapid and stable control of the machining pressure is realized, and in the continuous operation process of the system, the actual machining pressure gradually approaches the set value, thereby ensuring the reliability of the overall work of the wafer thinning device.

[0055] Further, the system further comprises a display module 401 and a parameter setting module 402.

[0056] The display module 401 is used for real-time display of the current machining pressure.

[0057] The parameter setting module 402 is used for modifying and setting the data of the controller 200.

[0058] Specifically, by the display module 401 and the parameter setting module 402, it can be ensured that the system runs normally, the inconvenience in the debugging process is reduced, and the reliability of the machining closed-loop control is further ensured.

[0059] The above embodiment is a preferred embodiment of the present application, but the embodiment of the present application is not limited by the above embodiment, and any change, modification, replacement, combination, simplification made without departing from the spirit and principle of the present application should be an equivalent replacement mode, and all are included in the protection scope of the present application.

Claims

1. A wafer thinning device, characterized in that: The system includes a base, a rotary table mounted on the base, and a spindle support mechanism. The spindle support mechanism includes a support, a spindle, an electromagnetic force module, and a sliding unit. The sliding unit includes mutually cooperating connecting parts and a mounting base. The support and the base are slidably fitted together. The connecting piece is disposed on the support, and the spindle is disposed on the mounting base. An electromagnetic force module is provided between the spindle and the support. The electromagnetic force module can generate electromagnetic force and act on the spindle. The end of the spindle is used to install a machining tool, and the machining tool is positioned corresponding to the table surface of the rotary table.

2. The wafer thinning apparatus according to claim 1, characterized in that: It also includes a power module and a movable module mounted on the base, with a spindle support mechanism mounted on the movable module and connected to the power module.

3. The wafer thinning apparatus according to claim 1, characterized in that: It also includes an elastic element disposed between the mounting base and the support, the elastic element being elastically deformed along the axial direction of the main shaft, which can generate an elastic force acting on the main shaft.

4. The wafer thinning apparatus according to claim 1, characterized in that: The electromagnetic force module includes two electromagnetic force components spaced apart along the main shaft axis. One electromagnetic force component is mounted on the connector, and the other electromagnetic force component is mounted on the support. The two electromagnetic force components can generate electromagnetic attraction or electromagnetic repulsion and act on the main shaft.

5. The wafer thinning apparatus according to claim 4, characterized in that: The electromagnetic force assembly includes a housing, multiple coils and multiple magnets disposed within the housing, the multiple coils being spaced apart, and multiple magnets being disposed between adjacent coils; each coil is provided with an iron core.

6. The wafer thinning apparatus according to claim 4, characterized in that: The electromagnetic force module also includes a buffer pad, which is disposed between the two electromagnetic force components.

7. The wafer thinning apparatus according to claim 5, characterized in that: The housing has a first coil layer in the middle, and multiple coil layers and multiple magnet layers are arranged alternately along the radial direction of the first coil layer. Each coil layer has multiple coils arranged in a uniform manner. Multiple magnets are arranged between adjacent coil layers and between adjacent coils in each coil layer.

8. The wafer thinning apparatus according to claim 1, characterized in that: The rotary table is equipped with a vacuum suction cup for positioning the workpiece, and a pressure sensor for detecting the processing pressure.

9. The wafer thinning apparatus according to claim 1, characterized in that: The spindle support mechanism also includes a tilt adjustment ring, which is disposed on the support and located on the outer periphery of the spindle.

10. A wafer thinning system, characterized in that: The device includes the wafer thinning apparatus, controller, and power supply as described in any one of claims 1 to 9, wherein the controller is connected to the pressure sensor and the power supply, and the controller adjusts the power supply of the power supply according to the processing pressure collected by the pressure sensor; the power supply is connected to the electromagnetic force module and adjusts the current of the electromagnetic force module.

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