Chemical mechanical polishing device

Abstract

The utility model discloses a chemical mechanical polishing device. The chemical mechanical polishing device comprises a supporting table used for bearing a wafer to be polished; the plurality of positioning claws are positioned on the outer side of the supporting table, and each positioning claw is provided with a pushing surface facing the wafer; the positioning claw can move along the radial direction of the supporting table, so that the pushing surface is in contact with the side surface of the wafer to push the wafer to move to a preset position of the supporting table; the driving unit is connected with the positioning claw and drives the positioning claw to move; the positioning claw is further provided with a spraying pipe, an air outlet of the spraying pipe faces the supporting table, and the spraying pipe can blow air to the wafer so that the wafer can move to the supporting table from the position where the wafer is in lap joint with the positioning claw. The chemical mechanical polishing device has the processing capacity for dealing with the abnormal condition that the wafer is lapped on the positioning claw, the time cost and the labor cost can be saved, the alarm frequency is reduced, and the automatic operation capacity of equipment is improved.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor manufacturing equipment technology, specifically to a chemical mechanical polishing device. Background Technology

[0002] Chemical mechanical polishing (CMP) technology has been widely used in semiconductor manufacturing. Its core principle combines the advantages of chemical etching and mechanical abrasion. During the polishing process, the chemical reagents in the polishing slurry first react with the wafer surface material, transforming the hard material on the surface into relatively soft reaction products. Then, through the relative movement between the polishing pad and the workpiece, the abrasive particles on the polishing pad mechanically remove these soft reaction products. This synergistic effect allows CMP technology to achieve extremely high surface smoothness while efficiently removing material.

[0003] In the chemical mechanical polishing (CMP) process, the robotic arm first places the wafer on the support stage of the CMP equipment. Then, through the cooperation of the polishing head and the support stage, the polishing head picks up the wafer and transfers it to the polishing pad for chemical mechanical polishing. During this process, it is necessary to first ensure that the robotic arm places the wafer in the preset position on the support stage, and then further adjust the wafer's position on the support stage using limiting or pushing positioning mechanisms located on the outside of the support stage.

[0004] However, during long-term, high-volume processing, the grinding head may not be precisely aligned with the wafer or the adsorption vacuum may fluctuate, causing the grinding head to fail to adsorb the wafer, which may then slip onto the support platform. In some cases, the edge of the wafer may even come into contact with the limiting or pushing positioning mechanism on the outer side of the support platform, leading to equipment shutdown.

[0005] Existing CMP equipment is difficult to process the tilted wafers mentioned above, often requiring manual intervention. This not only makes the operation difficult but also interrupts the continuous operation of the equipment, affecting the efficiency and capacity of the equipment and production line. Utility Model Content

[0006] In view of the above problems, the purpose of this utility model is to provide a chemical mechanical polishing device. This chemical mechanical polishing device adds a nozzle to the positioning claw, which can blow gas into the gap formed between the tilted wafer and the support stage. After the wafer is subjected to force, it can return to the support stage as a whole, thereby obtaining the ability to handle the abnormal situation of the wafer overlapping on the positioning claw. This can save time and labor costs, reduce alarm frequency, and improve the automation operation capability of the equipment.

[0007] To achieve the above objectives, this utility model provides a chemical mechanical polishing (CMP) apparatus, comprising: a support stage for supporting a wafer to be polished; multiple positioning claws located outside the support stage, each positioning claw having a pushing surface facing the wafer; the positioning claws are movable along the radial direction of the support stage, so that the pushing surface contacts the side of the wafer, thereby pushing the wafer to a predetermined position on the support stage; a drive unit connected to the positioning claws, driving the positioning claws to move; wherein, the positioning claws are also provided with nozzles, the outlets of which face the support stage, and the nozzles are capable of blowing gas onto the wafer to move the wafer from the position where it is attached to the positioning claws onto the support stage.

[0008] Optionally, the positioning claw includes a mounting part and a pushing part. The mounting part is slidably connected to a slide rail below the mounting part via a connecting column. The slide rail is arranged in the radial direction of the support platform. The mounting part has a first side facing the support platform. The rear end of the pushing part is connected to the first side of the mounting part, and the pushing surface is located at the front end of the pushing part.

[0009] Optionally, the nozzle passes through the mounting section and exits from a first side of the mounting section; or, the nozzle is located below the mounting section and connected to the lower surface of the mounting section.

[0010] Optionally, the pushing part further includes an inclined surface, which connects the upper surface of the pushing part and the pushing surface, and the angle between the inclined surface and the upper surface is 120°-160°.

[0011] Optionally, the length of the nozzle extending from the first side of the mounting portion does not exceed the outline of the inclined surface of the push portion.

[0012] Optionally, each positioning claw includes two pushing parts, which are located at both ends of the first side of the mounting part, and the nozzle is located between the two pushing parts.

[0013] Optionally, a positioning groove is provided on the pushing surface, the positioning groove extending in a direction parallel to the surface of the support stage, and the positioning groove corresponding to the side of the wafer on the support stage.

[0014] Optionally, along the thickness direction of the positioning claw, the size of the pushing surface is larger than the size of the first side surface.

[0015] Optionally, the size of the support stage is smaller than the size of the wafer, so that the edge of the wafer is suspended above the support stage.

[0016] Optionally, the positioning claw is also equipped with a photoelectric sensor, which includes a transmitter and a receiver, with the transmitter on each positioning claw being positioned opposite to the receiver on another positioning claw.

[0017] Optionally, it also includes: multiple valves, each connected to a nozzle to control the flow of gas in the nozzle; and a controller connected to a photoelectric sensor to control the opening and closing of the multiple valves based on the signal from the photoelectric sensor.

[0018] The chemical mechanical polishing (CMP) apparatus provided by this invention, by adding a nozzle to the positioning claw, allows the wafer, which is attached to the positioning claw, to return to the support table as a whole under the force of the gas, ensuring precise alignment between the wafer and the polishing head, reducing the probability of equipment malfunctions, and ensuring the processing efficiency of the equipment and production line. Furthermore, by incorporating a valve on the nozzle to adjust the gas flow rate, the flow rate can be flexibly adjusted according to the specifications of the wafer to be polished, ensuring that the wafer returns to the support table as a whole under the force of the gas. In addition, the inclined surface on the pushing part of the positioning claw facilitates the smooth return of the wafer attached to the positioning claw to the support table. This CMP apparatus is not only simple in structure but also has low modification costs, making it easy to promote and apply in production.

[0019] Furthermore, by setting photoelectric sensors on the positioning claws and corresponding controllers and valves, the abnormal wafer bonding state can be automatically detected and processed, thereby further reducing the alarm frequency, improving the automation capability and operating efficiency of the equipment, and saving time and labor costs. Attached Figure Description

[0020] The above and other objects, features, and advantages of this utility model will become clearer from the following description of embodiments of the present utility model with reference to the accompanying drawings. Furthermore, for clarity, the various parts in the drawings are not drawn to scale.

[0021] Figure 1a This is a schematic diagram showing the positional relationship between the wafer and the support stage of the chemical mechanical polishing apparatus under normal conditions.

[0022] Figure 1b A top view showing the positional relationship between the wafer and the support stage of the chemical mechanical polishing apparatus under normal conditions;

[0023] Figure 2a This is a schematic diagram showing the positional relationship between the wafer and the support stage of the chemical mechanical polishing apparatus under abnormal conditions.

[0024] Figure 2b A top view showing the positional relationship between the wafer and the support stage of the chemical mechanical polishing apparatus under abnormal conditions;

[0025] Figure 3a This is a schematic diagram of the positioning claw in the chemical mechanical polishing apparatus of the first embodiment of the present invention;

[0026] Figure 3b This is a cross-sectional schematic diagram of the positioning claw in the chemical mechanical polishing apparatus of the first embodiment of the present invention;

[0027] Figure 3cThis is a cross-sectional schematic diagram of the positioning claw in the chemical mechanical polishing apparatus of the first embodiment of this utility model;

[0028] Figure 4 This is a side view of the positioning claw in the chemical mechanical polishing apparatus of the first embodiment of the present invention;

[0029] Figure 5a This is a schematic diagram of the positioning claw in the chemical mechanical polishing apparatus of the second embodiment of the present invention;

[0030] Figure 5b This is a side view of the positioning claw in the chemical mechanical polishing apparatus of the second embodiment of the present invention;

[0031] Figure 6a This is a top view of the positioning claw in the chemical mechanical polishing apparatus of the third embodiment of this utility model;

[0032] Figure 6b This is a top view of the abnormal wafer overlap of the chemical mechanical polishing apparatus according to the third embodiment of this utility model;

[0033] Figure 6c This is a partially enlarged schematic diagram of the positioning claw in the chemical mechanical polishing apparatus of the third embodiment of this utility model. Detailed Implementation

[0034] Various embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. However, the present invention is not limited to these embodiments. In the following detailed description of the present invention, certain specific details are described in detail. Those skilled in the art can fully understand the present invention without these details. To avoid obscuring the essence of the present invention, well-known methods, processes, and procedures are not described in detail. To facilitate the explanation of the size and positional relationships between certain structures of the wafer and the chemical mechanical polishing apparatus, some drawings show the wafer in a transparent manner.

[0035] Figure 1a and Figure 1b These are schematic diagrams and top views showing the positional relationship between the wafer and the support stage of the chemical mechanical polishing apparatus under normal conditions. (Reference) Figure 1a and Figure 1bBefore polishing (or grinding) the wafer 300, the wafer 300 is first positioned. The general process includes: S1, the support stage 100 is raised, and the robot arm moves the wafer 300 to be polished onto the support stage 100; S2, the support stage 100 is lowered to a predetermined height, so that the side of the wafer 300 corresponds to the positioning claw 200 located on the outside of the support stage 100; S3, the positioning claw 200 moves along the slide rail towards the support stage 100 under the drive of the drive unit. The wafer 200 on the support stage 100 is moved to a predetermined position, which is generally the position where the center of the wafer 200 is aligned with the center of the support stage 100. S4, the positioning claw 200, driven by the drive unit, moves along the slide rail away from the support stage 100, disengaging from the wafer 200 until it resets. S5, the polishing head picks up the wafer 300 at the predetermined position and transfers it to the polishing pad for subsequent chemical mechanical polishing. The slide rail is, for example, arranged radially along the support stage 100, and the positioning claw 300 includes, for example, three claws, with an angle of, for example, 120° between adjacent slide rails.

[0036] It should be noted that the size of the support stage 100 is, for example, slightly smaller than the size of the wafer 300, meaning that the edge of the wafer 300 is suspended above the support stage 100. This prevents the positioning claw 200 from colliding or interfering with the support stage 100 when moving (pushing) the wafer 300. Furthermore, the extreme position of the positioning claw 200 moving toward the support stage 100 is at a certain distance from the edge of the support stage 100 to avoid damaging the wafer 300.

[0037] Figure 2a and Figure 2b The figures show a schematic diagram and a top view of the positional relationship between the wafer and the support stage of the chemical mechanical polishing apparatus under abnormal conditions. When the polishing head (not shown in the figure) fails to be precisely aligned with the wafer 300 or the vacuum level fluctuates, the polishing head may fail to adsorb the wafer 300, causing the wafer 300 to detach from the polishing head and slide onto the support stage 100, or even an abnormal state in which part of the edge of the wafer 300 overlaps with the positioning claw 200.

[0038] Although the grinding head has a re-adsorption function, it will automatically re-adsorb when the equipment detects an abnormal adsorption of the grinding head. However, if the wafer 300 is in a state of overlapping with the positioning claw 200, that is, the wafer 300 is in a tilted state, the wafer 300 is difficult to be accurately adsorbed by the grinding head in this state, which will cause the entire equipment to issue an alarm and stop operating.

[0039] Existing CMP equipment is unable to adjust the position of wafer 300 in the above-mentioned abnormal state, requiring operator intervention to change the tilt state of wafer 300. On the one hand, manual operation is difficult and can easily damage wafer 300; on the other hand, after manually adjusting the position of wafer 300, it is necessary to restore the equipment operation, which seriously affects the efficiency and capacity of the equipment.

[0040] To address the abnormal situation where a portion of the edge of wafer 300 overlaps with the positioning claw 200, this application provides a novel chemical mechanical polishing (CMP) apparatus, with a focus on optimizing the structure of the positioning claw. The structure and working principle of the novel CMP apparatus are explained below with reference to specific embodiments. Due to space limitations, some known structures within the CMP apparatus are omitted in the following description.

[0041] See Figure 3a In the chemical mechanical polishing apparatus of the first embodiment of this utility model, the positioning claw 200 includes a mounting portion 210 and a pushing portion 220. The mounting portion 210 is approximately rectangular and flat, and has a first side 2101 facing the support platform 100 and a second side (not shown) facing away from the support platform 100. The second side is a smooth surface. The first side 2101 is provided with two pushing portions 220, which are located at the left and right ends of the first side 2101 and extend from the first side 2101 toward the support platform 100. The side of the pushing portion 220 facing the support platform 100 has a pushing surface 221. In order to make the pushing surface 221 have sufficient contact area with the side of the wafer 300 and to improve the tolerance, the end of the pushing portion 220 facing the support platform 100 has a downwardly extending portion to increase the area of ​​the pushing surface 221. That is, along the thickness direction of the pushing portion 220, the size of the pushing surface 221 is larger than the size of the first side 2101.

[0042] The mounting portion 210 is also provided with a through hole, through which the connecting post 211 passes and is slidably connected to a slide rail (not shown in the figure) below the mounting portion 210, allowing the positioning claw 200 to move along the slide rail, thereby moving closer to or away from the support platform 100. Furthermore, the positioning claw 200 can be driven, for example, by a drive unit such as a cylinder, and the mounting portion 210 of the positioning claw 200 also includes, for example, a connecting hole 213 through which it can be connected to the drive unit.

[0043] The positioning claw 200 is also equipped with a nozzle 212, see [link / reference]. Figure 3bThe nozzle 212 enters the mounting section 210 from the second side and extends from the first side 2101. The outlet of the nozzle 212 faces the support platform 100, and the inlet is used to connect to a gas source, such as a centralized gas supply system for the plant. High-purity nitrogen, argon, or other inert gases can be blown towards the support platform 100 through the nozzle 212. When a portion of the edge of the wafer 300 overlaps with the positioning claw 200, by controlling the nozzle 212 on the overlapping positioning claw 200 to blow gas, the wafer 300 can be pushed away from the overlapping positioning claw 200, thereby detaching the wafer 300 from the abnormal state of being overlapped with the positioning claw 200 and returning it to the normal state where the entire wafer 300 is supported by the support platform 100. Then, the positioning claw 200 is driven to move, adjusting the position of the wafer 300 on the support platform 100, after which the grinding head can pick up the wafer 300 again.

[0044] For example, there are two nozzles 212, both located between the two push sections 220; however, this is not a limitation, and there can be three or more nozzles 212, or even just one. In this embodiment, the multiple nozzles 212 are arranged in parallel; in other embodiments, the nozzles 212 may be at a certain angle. Furthermore, in this embodiment, the two nozzles 212 are located at the same horizontal position, but this is not a limitation. In addition, valves (not shown in the figure) can be provided on the nozzles 212 to adjust the on / off state and flow rate of the airflow. This allows for the selection of whether to open the valve based on whether an overlap abnormality occurs, and also allows for flexible adjustment of the gas flow rate according to the specifications of the wafer to be polished, such as its weight, ensuring that the wafer as a whole can return to the support stage under the force of the gas.

[0045] Although only an embodiment with three positioning claws is shown in the above chemical mechanical polishing apparatus, the number of positioning claws can be other than two, four, or six, depending on the actual situation and requirements. To avoid the wafer 300 being scratched by the nozzle 212, see [link to relevant documentation]. Figure 3c In one implementation, although the end of the nozzle 212 extends from the first side 2101, the extended portion does not exceed the contour of the pusher portion 220, so as to avoid the wafer 300 being scratched by the protruding nozzle 212 when it is placed on the pusher portion 220 of the positioning claw 200. In another implementation, the end of the nozzle 212 does not extend beyond the first side 2101, for example, it is flush with the first side 2101.

[0046] Figure 4 This is a side view of the positioning claw in the chemical mechanical polishing apparatus of the first embodiment of this application. Figure 4 and Figure 3cAs shown, an inclined surface 222 can be provided between the pushing surface 221 and the upper surface of the pushing part 220. The included angle α between the inclined surface 222 and the upper surface is a relatively large obtuse angle, specifically, the included angle α is, for example, 120° to 160°. Furthermore, the inclined surface 222 of the pushing part 220 has a smooth surface. In this way, if a wafer overlap abnormality occurs, the gas blown onto the wafer 300 through the nozzle 212, coupled with the slope formed by the inclined surface 222 of the positioning claw 200 and its smooth surface, can further ensure that the wafer 300 quickly returns to the correct position, and can also effectively reduce the risk of damage to the surface of the wafer 300 caused by the positioning claw 200.

[0047] Furthermore, a positioning groove (not shown in the figure) may be provided on the pushing surface 221. The extending direction of the positioning groove is parallel to the surface of the support stage 100 to serve a positioning function. When installing / adjusting the positioning claw 200, the positioning groove is aligned with the side of the wafer 300 on the support stage 100. Specifically, the positioning groove may be located near the middle region of the pushing surface 221. It is easy to understand that when the support stage 100 is lowered into position, the position of the positioning groove on the pushing surface 221 should be slightly higher than the upper surface of the support stage 100, so that the side of the wafer 300 located on the upper surface of the support stage 100 corresponds to the positioning groove on the pushing surface 221.

[0048] Figure 5a and Figure 5b A schematic diagram and a side view of the positioning claw in the chemical mechanical polishing apparatus of the second embodiment of this utility model are shown respectively. (Reference) Figure 5a and Figure 5b The second embodiment is similar to the first embodiment, except that in the positioning claw 200 of the second embodiment, the nozzle 212 is not inserted into the mounting part 210, but is located below the mounting part 210 and close to the lower surface of the mounting part 210.

[0049] Specifically, the lower surface of the mounting part 210 is provided with a fixing structure for fixing the nozzle 212. The fixing structure is at least one of the following: a buckle, a hook, etc. The fixing structure is connected to the mounting part 210 of the positioning claw 200 by bolts, etc.

[0050] Compared to the first embodiment, the second embodiment eliminates the need for a through hole in the mounting section 210 for the nozzle 212 to pass through, making the installation and removal of the nozzle 212 more convenient and facilitating the modification of the existing positioning claw 200. Furthermore, under otherwise identical conditions, the outlet of the nozzle 212 in the second embodiment is lower than that in the first embodiment. Therefore, by adjusting the gas flow rate and the position between the outlet and the support platform 100, it can be ensured that the wafer 300 attached to the positioning claw 200 can be moved onto the support platform 100 by blowing gas.

[0051] Figure 6a A schematic diagram of the positioning claws of the chemical mechanical polishing apparatus according to a third embodiment of the present invention is shown. Figure 6a As shown, compared to the first and second embodiments, the chemical mechanical polishing apparatus provided in the third embodiment adds a sensor 230 to the positioning claw 200 and provides a valve (not shown in the figure) and a corresponding controller (not shown in the figure) for the nozzle 212. The sensor 230 is used, for example, to detect whether an event similar to... Figure 2a and Figure 2b The abnormality of the wafer being attached to the positioning claw is shown. The sensor 230 sends the detection result to the controller. The controller determines whether to open the valve and which positioning claw corresponding to the nozzle valve to open based on the specific detection situation. This realizes the automated detection and automated handling of abnormal conditions in the chemical mechanical polishing device, which can not only save manpower, but also improve the efficiency of abnormal handling.

[0052] The sensor 230 is, for example, a photoelectric sensor, and may specifically include a transmitter 231 and a receiver 232. The transmitter 231 on each positioning claw 200 is paired with the receiver 232 on the other positioning claw. Figure 6a As shown, when the wafer 300 does not partially overlap with the positioning claw 200, the light emitted by the transmitter 231 will not be blocked by the wafer 300, and the receiver 232 can also receive the light signal sent by the transmitter 231 of the corresponding adjacent positioning claw 200.

[0053] like Figure 6b As shown, taking the support platform 100 with three positioning claws 200 on its outer side as an example, for ease of explanation, these three positioning claws are referred to as positioning claws 200a to 200c respectively. The arrows in the figure are used to indicate the direction of the optical path. The transmitting end 231 on positioning claw 200a and the receiving end 232 on positioning claw 200b are paired. That is, the receiving end 232 on positioning claw 200b can receive the optical signal emitted by the transmitting end 231 on positioning claw 200a and can convert the received optical signal into an electrical signal and transmit the corresponding electrical signal to the controller. Similarly, the transmitting end 231 on positioning claw 200b and the receiving end 232 on positioning claw 200c are paired, and the transmitting end 231 on positioning claw 200c and the receiving end 232 on positioning claw 200a are paired.

[0054] When the edge of wafer 300 overlaps with the positioning claw 200a, see Figure 6c and combined Figure 6bThe light path emitted by the transmitter 231 of the positioning claw 200a is blocked by the wafer 300, and the receiver 232 on the positioning claw 200b cannot receive the light signal emitted by the transmitter 231 on the positioning claw 200a, thus outputting an abnormal signal to the controller; in addition, the receiver 232 on the positioning claw 200a also cannot receive the light signal emitted from the transmitter 231 on the positioning claw 200c, and also outputs an abnormal signal to the controller; while the receiver 232 on the positioning claw 200c can normally receive the light signal emitted by the transmitter 231 on the positioning claw 200b, thus outputting a normal signal to the controller; the controller locates the abnormality (partial edge of the wafer 300 overlaps with the positioning claw 200a) based on the above signals, and sends a control signal to open the valve on the nozzle 212 on the positioning claw 200a.

[0055] The aforementioned controller can specifically be a PLC controller. In a specific product, the controller can be integrated with the control system of the chemical mechanical polishing equipment. When an abnormal adsorption of the polishing head is detected, the control system can first obtain the signal from the aforementioned controller. If it is determined that there is an overlap abnormality, the corresponding valve can be opened. If it is determined that no overlap abnormality has occurred, the polishing head can continue to be controlled to repeatedly adsorb or the positioning claw 200 can be driven to move to reposition the wafer 300.

[0056] The aforementioned valves may specifically include a solenoid valve and a pneumatic valve connected together. For example, the solenoid valve is used to receive signals output by the controller and control the opening and closing of the pneumatic valve. If the controller signal indicates a wafer bonding abnormality, the solenoid valve opens, and the connected pneumatic valve also opens, opening the air path and allowing gas to blow the wafer 300 so that it moves as a whole onto the support platform 100. Of course, if the control signal indicates normal operation, the solenoid valve remains closed.

[0057] The chemical mechanical polishing device provided by this utility model, by adding a nozzle to the positioning claw, allows the wafer, which is attached to the positioning claw, to return to the support table as a whole under the force of the gas through gas blowing. This ensures precise alignment between the wafer and the polishing head, enabling the handling of abnormal wafer overlap, reducing alarm frequency, saving time and labor costs, and improving equipment and production line operating efficiency. Furthermore, by installing a valve on the nozzle to adjust the gas flow rate, the gas flow rate can be flexibly adjusted according to the specifications of the wafer to be polished, ensuring that the wafer can return to the support table as a whole under the force of the gas. The inclined surface on the positioning claw further ensures that the wafer can smoothly return to the support table as a whole.

[0058] Furthermore, photoelectric sensors can be installed on the positioning claw, along with corresponding controllers and valves, to achieve automated detection and handling of abnormal wafer overlap, thereby improving the equipment's automated operation capability and efficiency.

[0059] It should be noted that in the description of this utility model, terms such as "first" and "second" are used only to facilitate the description of different parts, components, and areas, and should not be construed as indicating or implying sequential relationships, relative importance, or implicitly indicating the number of technical features indicated.

[0060] The above description is merely a preferred embodiment of this utility model and is not intended to limit the scope of this utility model. For those skilled in the art, various modifications and variations are possible. Any modifications, equivalent substitutions, or improvements made within the spirit and principle of this utility model should be included within its protection scope. Furthermore, the technical content of the above embodiments can be combined where there is no conflict.

Claims

1. A chemical mechanical polishing apparatus characterized by comprising: The application relates to a wafer positioning device for polishing a wafer, which comprises: a supporting table for supporting the wafer to be polished; a plurality of positioning claws arranged outside the supporting table, wherein the positioning claws have pushing surfaces facing the wafer; the positioning claws are movable along the radial direction of the supporting table, and the pushing surfaces are arranged to contact the side surface of the wafer and push the wafer to a predetermined position on the supporting table; a driving unit connected to the positioning claws and used for driving the positioning claws to move; wherein the positioning claws are further provided with a nozzle, the outlet of the nozzle faces the supporting table, and the nozzle is used for blowing gas to the wafer so as to move the wafer from the position of being overlapped with the positioning claws to the supporting table.

2. The chemical mechanical polishing apparatus of claim 1, wherein The positioning claw comprises a mounting part and a pushing part, the mounting part is slidably connected to a slide rail below the mounting part through a connecting column, the slide rail is arranged along the radial direction of the supporting table, the mounting part has a first side surface facing the supporting table, the rear end of the pushing part is connected to the first side surface of the mounting part, and the pushing surface is arranged at the front end of the pushing part.

3. The chemical mechanical polishing apparatus of claim 2, wherein The nozzle penetrates through the mounting part and extends out of the first side surface of the mounting part; or the nozzle is arranged below the mounting part and connected to the lower surface of the mounting part.

4. The chemical mechanical polishing apparatus of claim 3, wherein The pushing part further comprises an inclined surface, the inclined surface connects the upper surface of the pushing part and the pushing surface, and the angle between the inclined surface and the upper surface is 120-160 degrees.

5. The chemical mechanical polishing apparatus of claim 4, wherein The length of the nozzle extending out of the first side surface of the mounting part does not exceed the contour range of the inclined surface of the pushing part.

6. The chemical mechanical polishing apparatus according to any one of claims 2 to 5, wherein Each positioning claw comprises two pushing parts, the two pushing parts are respectively arranged at the two ends of the first side surface of the mounting part, and the nozzle is arranged between the two pushing parts.

7. The chemical mechanical polishing apparatus according to any one of claims 2 to 5, wherein A positioning groove is arranged on the pushing surface, the extending direction of the positioning groove is parallel to the surface of the supporting table, and the positioning groove corresponds to the side surface of the wafer arranged on the supporting table. Furthermore, the size of the pushing surface along the thickness direction of the positioning claw is greater than the size of the first side surface.

8. The chemical mechanical polishing apparatus according to any one of claims 1 to 5, wherein The size of the supporting table is smaller than the size of the wafer, so that the edge of the wafer is suspended on the supporting table.

9. The chemical mechanical polishing apparatus according to any one of claims 1 to 5, wherein The positioning claw is further provided with a photoelectric sensor, the photoelectric sensor comprises an emitting end and a receiving end, and the emitting end of each positioning claw is arranged opposite to the receiving end of another positioning claw.

10. The chemical mechanical polishing apparatus of claim 9, wherein The application further relates to a wafer polishing device, which comprises: a plurality of valves connected to the nozzles respectively, so as to control the on-off of the gas in the nozzles; a controller connected to the photoelectric sensor, so as to control the opening and closing of the valves according to the signal of the photoelectric sensor.

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