Cover plate of chemical vapor deposition reaction cavity and chemical vapor deposition reaction device

Abstract

The utility model discloses a cover plate of a chemical vapor deposition reaction cavity and a chemical vapor deposition reaction device. The cover plate comprises a cover plate body and a cooling structure positioned in the cover plate body, the cooling structure comprises a cooled material input hole, a cooled material output hole and at least two cooling channels; the cooling material input hole and the cooling material output hole are both located in the first surface of the side, away from the chemical vapor deposition reaction cavity, of the cover plate, and the cooling channel communicates with the cooling material input hole and the cooling material output hole; the shape of the cooling channels is an Archimedes spiral line, and the cooling channels are alternately and evenly arranged in the cover plate body, so that the shape of the cooling structure is in central symmetry. According to the utility model, the cooling channels in the shape of the Archimedes spiral are alternately and uniformly arranged in the cover plate body, so that the shape of the cooling structure is in central symmetry, the cooling objects introduced into the cooling channels can be uniformly distributed on the cover plate, and the heat of the cavity can be efficiently and uniformly dissipated.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor equipment manufacturing technology, and in particular to a cover plate for a chemical vapor deposition reaction chamber and a chemical vapor deposition reaction device. Background Technology

[0002] In the process of growing silicon carbide on a substrate using chemical vapor deposition (CVD), the temperature inside the reaction chamber can reach over 1600 degrees Celsius, and the reaction chamber itself needs to be well cooled.

[0003] The cover plate of the reaction chamber is a crucial component, placing high demands on the uniformity and efficiency of cooling. Therefore, there is an urgent need to design a highly efficient and uniform cooling device for heat dissipation from the chamber. Utility Model Content

[0004] This invention provides a cover plate for a chemical vapor deposition reaction chamber and a chemical vapor deposition reaction device, which can efficiently and uniformly dissipate heat from the chamber.

[0005] In a first aspect, this utility model provides a cover plate for a chemical vapor deposition reaction chamber, comprising: a cover plate body and a cooling structure located within the cover plate body;

[0006] The cooling structure includes a cooling material inlet, a cooling material outlet, and at least two cooling channels;

[0007] The coolant inlet and the coolant outlet are both located on the first surface of the cover plate away from the chemical vapor deposition reaction chamber, and the cooling channel connects the coolant inlet and the coolant outlet;

[0008] The cooling channels are shaped like an Archimedean spiral, and are alternately and evenly arranged within the cover plate body, making the cooling structure centrally symmetrical.

[0009] Optionally, the cooling structure includes two of the cooling channels;

[0010] The starting points of the two cooling channels are connected by a connecting channel;

[0011] The cooling material inlet is located at the end of one of the cooling channels, and the cooling material outlet is located at the end of the other cooling channel.

[0012] Optionally, the cooling structure includes two cooling channels, two cooling material inlet holes, and two cooling material outlet holes;

[0013] One of the cooling material inlet ports is located at the beginning of one of the cooling channels, and one of the cooling material outlet ports is located at the end of one of the cooling channels;

[0014] Another cooling material inlet is located at the beginning of one of the cooling channels, and another cooling material outlet is located at the end of the other of the cooling channels.

[0015] Optionally, the number of the cooling material inlet holes and the cooling material outlet holes is the same as the number of the cooling channels;

[0016] The cooling material inlet is located at the beginning of the cooling channel, and the cooling material outlet is located at the end of the cooling channel.

[0017] Optionally, the number of the cooling material inlet holes and the cooling material outlet holes is the same as the number of the cooling channels;

[0018] The cooling material inlet is located at the end of the cooling channel, and the cooling material outlet is located at the beginning of the cooling channel.

[0019] Optionally, the cooling structure includes two or more cooling channels, and the number of cooling material inlet holes and cooling material outlet holes is the same as the number of cooling channels;

[0020] At least one of the cooling material inlet holes is located at the beginning of the cooling channel, and at least one of the cooling material inlet holes is located at the end of the cooling channel;

[0021] The coolant outlet is located at the beginning or end of each of the cooling channels.

[0022] Optionally, the number of cooling material inlet holes is the same as the number of cooling channels;

[0023] The cooling material inlet is located at the end of the cooling channel, and each cooling channel shares a cooling material outlet at its starting point.

[0024] Optionally, the cooling structure may further include a sealing cap;

[0025] The cooling channel includes a stepped surface and a groove;

[0026] The sealing cap covers the stepped surface, thereby sealing the cooling channel within the cover plate.

[0027] Optionally, the groove may be U-shaped, rectangular, or trapezoidal.

[0028] Secondly, this utility model embodiment also provides a chemical vapor deposition reaction apparatus, including a cover plate and a chemical vapor deposition reaction chamber as described in any embodiment of the first aspect.

[0029] This invention provides a cover plate for a chemical vapor deposition (CVD) reaction chamber and a CVD reaction apparatus. The cover plate includes a cover plate body and a cooling structure located within the cover plate body. The cooling structure includes a coolant inlet, a coolant outlet, and at least two cooling channels. The coolant inlet and outlet are both located on a first surface of the cover plate away from the CVD reaction chamber. The cooling channels connect the coolant inlet and outlet. The cooling channels are in the shape of an Archimedean spiral, and are alternately and evenly arranged within the cover plate body, making the shape of the cooling structure centrally symmetrical. Because this invention alternately and evenly arranges the Archimedean spiral-shaped cooling channels within the cover plate body, making the shape of the cooling structure centrally symmetrical, the coolant entering the cooling channels can be evenly distributed on the cover plate, enabling efficient and uniform heat dissipation from the chamber.

[0030] It should be understood that the description in this section is not intended to identify key or essential features of the embodiments of this utility model, nor is it intended to limit the scope of this utility model. Other features of this utility model will become readily apparent from the following description. Attached Figure Description

[0031] To more clearly illustrate the technical solutions in the embodiments of this utility model, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0032] Figure 1 A top view of a cover plate for a chemical vapor deposition reaction chamber provided in an embodiment of this utility model;

[0033] Figure 2 A top view of the cover plate of another chemical vapor deposition reaction chamber provided in an embodiment of this utility model;

[0034] Figure 3 A top view of the cover plate of another chemical vapor deposition reaction chamber provided in an embodiment of this utility model;

[0035] Figure 4 A top view of the cover plate of another chemical vapor deposition reaction chamber provided in an embodiment of this utility model;

[0036] Figure 5A top view of the cover plate of another chemical vapor deposition reaction chamber provided in an embodiment of this utility model;

[0037] Figure 6 for Figure 1 A schematic diagram of the cross section along the A-A' direction. Detailed Implementation

[0038] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the protection scope of the present invention.

[0039] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this utility model are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of the utility model described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0040] Figure 1 A top view of a cover plate for a chemical vapor deposition reaction chamber provided in an embodiment of this utility model, with reference to... Figure 1 The cover plate includes: a cover plate body 100 and a cooling structure 200 located within the cover plate body 100; the cooling structure 200 includes a coolant inlet 210, a coolant outlet 220, and at least two cooling channels 230. Figure 1 Only two cooling channels 230 are shown in the figure; the coolant inlet 210 and the coolant outlet 220 are both located on the first surface of the cover plate away from the chemical vapor deposition reaction chamber. The cooling channel 230 connects the coolant inlet 210 and the coolant outlet 220. The shape of the cooling channel 230 is an Archimedean spiral, and the cooling channels 230 are alternately and evenly arranged in the cover plate body 100, so that the shape of the cooling structure 200 is centrally symmetrical.

[0041] It should be noted that an Archimedean spiral is the trajectory formed by a point moving away from a fixed point at a constant speed while rotating around that fixed point at a constant angular velocity. The cooling channel 230 of this application is shaped like an Archimedean spiral, which enables more uniform heat dissipation from the cover plate. When a cooling object, such as coolant, enters the cooling channel 230 through the coolant inlet 210, flows along the cooling channel 230, and then flows out through the coolant outlet 220, it can efficiently and evenly dissipate heat from the chamber.

[0042] It is understandable that the starting points of at least two cooling channels 230 may be connected or not connected, and the starting point of cooling channel 230 refers to the starting point of the Archimedes spiral.

[0043] This invention features alternating and uniformly arranged cooling channels 230 in the shape of an Archimedean spiral within the cover plate body 100, making the shape of the cooling structure 200 centrally symmetrical. This allows the cooling material entering the cooling channels 230 to be evenly distributed on the cover plate, enabling efficient and uniform heat dissipation from the chamber.

[0044] Optionally, based on the above embodiments, continue to refer to... Figure 1 The cooling structure 200 includes two cooling channels 230; the starting points of the two cooling channels 230 are connected by a connecting channel 240; the cooling material inlet 210 is located at the end of one cooling channel 230, and the cooling material outlet 220 is located at the end of the other cooling channel 230.

[0045] In this embodiment of the present invention, the starting points of the two cooling channels 230 are connected by a connecting channel 240, so that the cooling material is input from the cooling material input hole 210 at the end of one cooling channel 230, and after dissipating heat to the chamber through the two connected cooling channels 230, it is output from the cooling material output hole 220 at the end of the other cooling channel 230, which can efficiently and evenly dissipate heat to the chamber.

[0046] Figure 2 A top view of the cover plate of another chemical vapor deposition reaction chamber provided in this embodiment of the present invention. Optionally, based on the above embodiment, refer to... Figure 2 The cooling structure 200 includes two cooling channels 230, two cooling material inlet holes 210, and two cooling material outlet holes 220; one cooling material inlet hole 210 is located at the beginning of one cooling channel 230, and one cooling material outlet hole 220 is located at the end of one cooling channel 230; the other cooling material inlet hole 210 is located at the beginning of one cooling channel 230, and the other cooling material outlet hole 220 is located at the end of the other cooling channel 230.

[0047] It is understandable that the temperature of the cooling material at the end of the cooling channel 230 with the cooling material inlet 210 is lower. As the cooling material flows within the cooling channel 230 to cool it, its temperature gradually increases, resulting in a higher temperature at the end of the cooling channel 230 with the cooling material outlet 220. In this embodiment, one cooling material inlet 210 is located at the beginning of one cooling channel 230, and one cooling material outlet 220 is located at the end of one cooling channel 230; another cooling material inlet 210 is located at the beginning of one cooling channel 230, and another cooling material outlet 220 is located at the end of another cooling channel 230. This improves the uniformity and efficiency of heat dissipation from the chamber.

[0048] Figure 3 A top view of the cover plate of another chemical vapor deposition reaction chamber provided in this embodiment of the present invention. Optionally, based on the above embodiment, refer to... Figure 3 The number of cooling material inlet holes 210 and cooling material outlet holes 220 is the same as the number of cooling channels 230; the cooling material inlet holes 210 are located at the beginning of the cooling channel 230, and the cooling material outlet holes 220 are located at the end of the cooling channel 230.

[0049] It is understandable that the temperature in the middle area of ​​the cover plate is higher than that in the edge area. The cooling material inlet 210 is located at the beginning of the cooling channel 230, and the cooling material outlet 220 is located at the end of the cooling channel 230, which can further improve the uniformity of heat dissipation in the chamber.

[0050] Figure 4 A top view of the cover plate of another chemical vapor deposition reaction chamber provided in this embodiment of the present invention. Optionally, based on the above embodiment, refer to... Figure 4 The number of cooling material inlet holes 210 and cooling material outlet holes 220 is the same as the number of cooling channels 230; the cooling material inlet holes 210 are located at the end of the cooling channel 230, and the cooling material outlet holes 220 are located at the beginning of the cooling channel 230.

[0051] In this embodiment of the invention, by setting the number of cooling material inlet holes 210 and cooling material outlet holes 220 to be the same as the number of cooling channels 230, the efficiency of heat dissipation from the chamber can be improved.

[0052] Optionally, based on the above embodiments, the cooling structure 200 includes two or more cooling channels 230, the number of cooling material inlet holes 210 and cooling material outlet holes 220 is the same as the number of cooling channels 230; at least one cooling material inlet hole 210 is located at the starting point of the cooling channel 230, and at least one cooling material inlet hole 210 is located at the ending point of the cooling channel 230; the cooling material outlet hole 220 is located at the starting point or ending point of each cooling channel 230.

[0053] This embodiment of the invention provides two or more cooling channels 230, with the number of coolant inlet holes 210 and coolant outlet holes 220 being the same as the number of cooling channels 230, which further improves the efficiency of heat dissipation from the chamber. At least one coolant inlet hole 210 is located at the beginning of each cooling channel 230, and at least one coolant inlet hole 210 is located at the end of each cooling channel 230; the coolant outlet holes 220 are located at the beginning or end of each cooling channel 230, which further enhances the uniformity of heat dissipation from the chamber.

[0054] Figure 5 A top view of the cover plate of another chemical vapor deposition reaction chamber provided in this embodiment of the present invention. Optionally, based on the above embodiment, refer to... Figure 3 The number of cooling material inlet holes 210 is the same as the number of cooling channels 230; the cooling material inlet holes 210 are located at the end of the cooling channel 230, and each cooling channel 230 shares a cooling material outlet hole 220 at its starting point.

[0055] In this embodiment of the invention, each cooling channel 230 shares a common cooling output hole 220 at its starting point, which further improves the cooling efficiency while uniformly cooling the cover plate.

[0056] Figure 6 for Figure 1 A schematic cross-sectional view along the A-A' direction is shown. Optionally, based on the above embodiment, refer to... Figure 6 The cooling structure 200 also includes a sealing cover 250; the cooling channel 230 includes a stepped surface 231 and a groove 232; the sealing cover 250 covers the stepped surface 231, so that the cooling channel 230 is sealed inside the cover plate.

[0057] The cooling channel 230 can be sealed by welding the sealing cap 250 to the step surface 231.

[0058] The cooling channel 230 of this utility model embodiment includes a stepped surface 231 and a groove 232, and a sealing cover 250 is provided to cover the stepped surface 231, so that the cooling channel 230 is sealed in the cover plate, which reduces the difficulty of processing.

[0059] Optionally, based on the above embodiments, the shape of the groove 232 may include a U-shape, a rectangle, or a trapezoid.

[0060] Understandably, the shape of the groove 232 can be freely set, or it can be other shapes.

[0061] In summary, this invention features alternating and uniformly arranged cooling channels 230 in the shape of an Archimedean spiral within the cover plate body 100, resulting in a centrally symmetrical cooling structure 200. This allows the cooling material entering the cooling channels 230 to be evenly distributed on the cover plate, enabling efficient and uniform heat dissipation from the chamber. Furthermore, the starting points of the two cooling channels 230 are connected by a connecting channel 240, allowing the cooling material to enter through the cooling material inlet 210 at the end of one cooling channel 230, dissipate heat from the chamber through the two connected cooling channels 230, and then exit through the cooling material outlet 220 at the end of the other cooling channel 230, achieving efficient and uniform heat dissipation from the chamber. The placement of one cooling material inlet 210 at the beginning of one cooling channel 230 and one cooling material outlet 220 at the end of another cooling channel 230 further enhances the uniformity and efficiency of heat dissipation from the chamber. The coolant inlet 210 is located at the beginning of the cooling channel 230, and the coolant outlet 220 is located at the end of the cooling channel 230, which further improves the uniformity of heat dissipation in the chamber. Having the same number of coolant inlet and outlet holes 210 as the number of cooling channels 230 improves the efficiency of heat dissipation in the chamber. Having two or more cooling channels 230, with the same number of coolant inlet and outlet holes 220 as the cooling channels 230, further improves the efficiency of heat dissipation in the chamber. Having at least one coolant inlet 210 at the beginning and at the end of the cooling channel 230, and coolant outlet holes 220 at either the beginning or end of each cooling channel 230, further improves the uniformity of heat dissipation in the chamber. Having a single coolant outlet hole 220 shared at the beginning of each cooling channel 230 further improves cooling efficiency while ensuring uniform cooling of the cover plate. The cooling channel 230 includes a stepped surface 231 and a groove 232, and a sealing cover 250 is provided to cover the stepped surface 231, so that the cooling channel 230 is sealed in the cover plate, which reduces the difficulty of processing.

[0062] This utility model embodiment also provides a chemical vapor deposition reaction device, including a cover plate and a chemical vapor deposition reaction chamber provided in the above embodiment.

[0063] The specific embodiments described above do not constitute a limitation on the scope of protection of this utility model. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this utility model should be included within the scope of protection of this utility model.

Claims

1. A cover plate for a chemical vapor deposition reaction chamber, characterized in that, include: The cover plate body and the cooling structure located within the cover plate body; The cooling structure includes a cooling material inlet, a cooling material outlet, and at least two cooling channels; The coolant inlet and the coolant outlet are both located on the first surface of the cover plate away from the chemical vapor deposition reaction chamber, and the cooling channel connects the coolant inlet and the coolant outlet; The cooling channels are shaped like an Archimedean spiral, and are alternately and evenly arranged within the cover plate body, making the cooling structure centrally symmetrical.

2. The cover plate of the chemical vapor deposition reaction chamber according to claim 1, characterized in that, The cooling structure includes two cooling channels; The starting points of the two cooling channels are connected by a connecting channel; The cooling material inlet is located at the end of one of the cooling channels, and the cooling material outlet is located at the end of the other cooling channel.

3. The cover plate of the chemical vapor deposition reaction chamber according to claim 1, characterized in that, The cooling structure includes two cooling channels, two cooling material inlet holes, and two cooling material outlet holes; One of the cooling material inlet ports is located at the beginning of one of the cooling channels, and one of the cooling material outlet ports is located at the end of one of the cooling channels; Another cooling material inlet is located at the beginning of one of the cooling channels, and another cooling material outlet is located at the end of the other of the cooling channels.

4. The cover plate of the chemical vapor deposition reaction chamber according to claim 1, characterized in that, The number of cooling material inlet holes and cooling material outlet holes is the same as the number of cooling channels; The cooling material inlet is located at the beginning of the cooling channel, and the cooling material outlet is located at the end of the cooling channel.

5. The cover plate of the chemical vapor deposition reaction chamber according to claim 1, characterized in that, The number of cooling material inlet holes and cooling material outlet holes is the same as the number of cooling channels; The cooling material inlet is located at the end of the cooling channel, and the cooling material outlet is located at the beginning of the cooling channel.

6. The cover plate of the chemical vapor deposition reaction chamber according to claim 1, characterized in that, The cooling structure includes two or more cooling channels, and the number of cooling material inlet holes and cooling material outlet holes is the same as the number of cooling channels. At least one of the cooling material inlet holes is located at the beginning of the cooling channel, and at least one of the cooling material inlet holes is located at the end of the cooling channel; The coolant outlet is located at the beginning or end of each of the cooling channels.

7. The cover plate of the chemical vapor deposition reaction chamber according to claim 1, characterized in that, The number of cooling material inlet holes is the same as the number of cooling channels; The cooling material inlet is located at the end of the cooling channel, and each cooling channel shares a cooling material outlet at its starting point.

8. The cover plate of the chemical vapor deposition reaction chamber according to claim 1, characterized in that, The cooling structure also includes a sealing cap; The cooling channel includes a stepped surface and a groove; The sealing cap covers the stepped surface, thereby sealing the cooling channel within the cover plate.

9. The cover plate of the chemical vapor deposition reaction chamber according to claim 8, characterized in that, The groove can be U-shaped, rectangular, or trapezoidal.

10. A chemical vapor deposition reactor, characterized in that, Includes the cover plate and the chemical vapor deposition reaction chamber as described in any one of claims 1-9.

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