Epitaxial equipment

Abstract

The utility model relates to the technical field of semiconductors, and provides epitaxial equipment, which comprises a shell assembly and a bearing seat, the shell assembly is provided with a reaction cavity; the bearing seat is arranged in the reaction cavity; in the direction perpendicular to the bearing surface of the bearing seat, the bearing seat divides the reaction cavity into a first cavity and a second cavity; the shell assembly is provided with a first air inlet channel and a second air inlet channel, the first air inlet channel is communicated with the first cavity, and the second air inlet channel is communicated with the second cavity. According to the utility model, the first air inlet channel and the second air inlet channel are arranged, so that air can be introduced into the first chamber and the second chamber respectively, and the phenomenon of poor cleaning and etching effects is improved.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of semiconductor, especially relates to a epitaxial equipment. BACKGROUND

[0002] The epitaxial process equipment is a kind of more common semiconductor process equipment.In epitaxial growth process, multiple precursor epitaxial gases react in the reaction cavity of epitaxial process equipment, and deposit on wafer to obtain a certain thickness of epitaxial film.Of course, epitaxial growth process will inevitably form attachments on the inner wall of the reaction cavity of epitaxial process equipment and the surface of other components inside the reaction cavity, and the accumulation of attachments will affect the particle level inside the epitaxial process equipment and the stability of the next epitaxial growth process.

[0003] Therefore, after epitaxial growth process, the reaction cavity is usually cleaned and etched to remove the attachments remaining in the epitaxial process equipment.The existing cleaning and etching process is usually to pass cleaning and etching gas into the epitaxial process equipment through the epitaxial gas inlet, and to remove the attachments by the reaction of the gas and the attachments.

[0004] The existing reaction cavity in the epitaxial process equipment is provided with a bearing seat, and the bearing seat is used for bearing wafer, and the bearing seat divides the reaction cavity into two chambers (first chamber and second chamber), wherein the first chamber is the part of the reaction cavity close to the side of the bearing surface of the bearing seat, and the second chamber is the part of the reaction cavity away from the side of the bearing surface of the bearing seat.The epitaxial gas inlet also has the function of passing in epitaxial gas, so the epitaxial gas inlet is usually communicated with the first chamber.Therefore, when the cleaning and etching gas is passed through the epitaxial gas inlet, it is difficult to obtain a high concentration of cleaning and etching gas flow in the second chamber, which ultimately leads to the cleaning and etching process being difficult to clean and etch the inner wall of the second chamber and the components located in the chamber, and further leads to poor cleaning effect of the attachments.

[0005] Therefore, based on the above technical problems, an epitaxial equipment is needed to make the cleaning and etching gas in the first chamber and the second chamber relatively uniformly distributed to improve the above technical problem of poor cleaning effect. CONTENT OF UTILITY MODEL

[0006] The utility model provides an epitaxial equipment, which is provided with a first gas inlet channel and a second gas inlet channel, the first gas inlet channel is communicated with the first chamber located above the bearing seat in the reaction cavity, and the second gas inlet channel is communicated with the second chamber located below the bearing seat, so that the two channels can pass air into the first chamber and the second chamber respectively, which helps to make the cleaning and etching gas in the first chamber and the second chamber relatively uniformly distributed to improve the phenomenon of poor cleaning and etching effect.

[0007] The epitaxial device comprises a shell assembly and a bearing seat; the shell assembly has a reaction cavity; the bearing seat is arranged in the reaction cavity; the bearing seat has a bearing surface; the bearing seat divides the reaction cavity into a first chamber and a second chamber along a direction perpendicular to the bearing surface; the shell assembly is provided with a first gas inlet channel and a second gas inlet channel; the first gas inlet channel communicates with the first chamber; and the second gas inlet channel communicates with the second chamber.

[0008] The epitaxial device in the utility model is provided with the first gas inlet channel and the second gas inlet channel, wherein the first gas inlet channel communicates with the first chamber, and the second gas inlet channel communicates with the second chamber. When the reaction cavity of the epitaxial device needs to be cleaned by cleaning etching gas, the cleaning etching gas can be respectively introduced into the first chamber through the first gas inlet channel and introduced into the second chamber through the second gas inlet channel, and the amount and concentration of the gas introduced into the first chamber and the second chamber can be flexibly adjusted based on the cleaning requirement, so that the cleaning effect is ensured.

[0009] In addition, the first gas inlet channel and the second gas inlet channel can respectively and independently introduce the cleaning etching gas into the first chamber and the second chamber. During the cleaning process, the bearing seat does not need to be lifted to drain the cleaning etching gas and to distribute the amount of gas in the first chamber and the second chamber, which helps to simplify the cleaning process and the cleaning control process, and the bearing seat does not interfere with the flow of the cleaning etching gas and does not cause the cleaning etching gas to locally generate turbulence, thereby improving the excessive etching phenomenon caused by the local residence time of the cleaning etching gas being too long.

[0010] Optionally, the first chamber is a part of the reaction cavity close to the bearing surface, and the second chamber is a part of the reaction cavity away from the bearing surface.

[0011] The cross-sectional area of the first gas inlet channel along a direction perpendicular to the length direction thereof is greater than the cross-sectional area of the second gas inlet channel along a direction perpendicular to the length direction thereof.

[0012] Optionally, the first chamber is a part of the reaction cavity close to the bearing surface, and the second chamber is a part of the reaction cavity away from the bearing surface.

[0013] The bearing seat has a first side surface; the first side surface is opposite to the bearing surface along a direction perpendicular to the bearing surface; and the distance between the outlet of the first gas inlet channel and the bearing surface is less than the distance between the outlet of the second gas inlet channel and the first side surface.

[0014] Optionally, the outlet of the first gas inlet channel and / or the outlet of the second gas inlet channel is parallel to the bearing surface.

[0015] Optionally, the outlet of the first gas inlet channel and / or the outlet of the second gas inlet channel is horizontally arranged.

[0016] Optionally, the shell assembly is provided with a first gas outlet channel and a second gas outlet channel.

[0017] The first gas outlet channel is in communication with the first chamber, and the second gas outlet channel is in communication with the second chamber.

[0018] Optionally, the second gas inlet channel and the second gas outlet channel are oppositely arranged along a first direction, and the first direction is parallel to the bearing surface.

[0019] Optionally, the epitaxial device further comprises a flow controller arranged in the first gas inlet channel and / or the second gas inlet channel.

[0020] Optionally, the epitaxial device further comprises a preheating ring arranged around the bearing seat.

[0021] In a direction perpendicular to the bearing surface, the first gas inlet channel and the second gas inlet channel are arranged on both sides of the preheating ring.

[0022] Optionally, the shell assembly comprises an outer ring and an inner ring, and an outer circumferential surface of the inner ring is sealingly fitted to an inner circumferential surface of the outer ring.

[0023] An outer channel is formed on the outer ring, and an inner channel is formed on the inner ring, and the outer channel and the inner channel are in communication and constitute the second gas inlet channel.

[0024] In summary, the epitaxial device in the utility model comprises: a shell assembly and a bearing seat; the shell assembly has a reaction chamber; the bearing seat is arranged in the reaction chamber; in a direction perpendicular to the bearing surface, the bearing seat separates the reaction chamber into a first chamber and a second chamber; the shell assembly is provided with a first gas inlet channel and a second gas inlet channel, the first gas inlet channel is in communication with the first chamber, and the second gas inlet channel is in communication with the second chamber.

[0025] In this way, the epitaxial device in the utility model is provided with a first gas inlet channel and a second gas inlet channel, wherein the first gas inlet channel is in communication with the first chamber, and the second gas inlet channel is in communication with the second chamber. When the reaction chamber of the epitaxial device needs to be cleaned by cleaning etching gas, the cleaning etching gas can be introduced into the first chamber through the first gas inlet channel and introduced into the second chamber through the second gas inlet channel. The amount and concentration of the gas introduced into the first chamber and the second chamber can be flexibly adjusted based on the cleaning requirements to ensure better cleaning effect.

[0026] In addition, the first and second air inlet channels are arranged to independently introduce cleaning etching gas into the first and second chambers, respectively. During cleaning, the carrier does not need to be lifted to guide the cleaning etching gas to distribute the amount of gas in the first and second chambers, which helps to simplify the cleaning process and the cleaning control process, and the carrier does not interfere with the flow of the cleaning etching gas and does not cause the cleaning etching gas to locally generate turbulence, thereby improving the excessive etching phenomenon caused by the local residence time of the cleaning etching gas being too long. BRIEF DESCRIPTION OF DRAWINGS

[0027] Figure 1 Structure diagram of the epitaxial equipment of the embodiment one of the utility model.

[0028] In the drawings:

[0029] 10 - housing assembly;

[0030] 101 - outer ring;

[0031] 102 - inner ring; 1021 - first groove; 1022 - recessed area; 1023 - third groove;

[0032] 103 - upper base ring;

[0033] 104 - lower base ring;

[0034] 105 - upper cover; 1051 - annular upper support; 1052 - second groove; 1053 - fourth groove;

[0035] 106 - lower cover; 1061 - annular lower support;

[0036] 11 - first chamber;

[0037] 12 - second chamber;

[0038] 13 - first air inlet channel; 131 - first channel; 132 - second channel;

[0039] 14 - second air inlet channel; 141 - third channel; 142 - fourth channel;

[0040] 15 - first air outlet channel; 151 - fifth channel; 152 - sixth channel;

[0041] 16 - second air outlet channel; 161 - seventh channel; 162 - eighth channel;

[0042] 20 - carrier; 21 - carrier surface; 22 - carrier rod; 23 - thimble; 24 - thimble rod; 25 - first side surface;

[0043] 30 - flow controller;

[0044] 40 - preheating ring;

[0045] a - first direction. DETAILED DESCRIPTION

[0046] The epitaxial equipment provided by the present application is further described in detail below in combination with the drawings and specific embodiments. The advantages and features of the present application will be more apparent according to the following description. It should be noted that the drawings are all in a very simplified form and all use non-precise proportions, only for the purpose of facilitating and clarifying the purpose of assisting in the description of the embodiments of the present application.

[0047] In the present application, "outer diameter" and "inner diameter" correspond to the diameter size for circular structure, for non-circular structure, the inner diameter refers to the diameter of its inscribed circle, and the outer diameter refers to the diameter of its circumscribed circle; "axial direction" corresponds to the direction of the axis for cylindrical rod, for non-cylindrical rod, the axial direction corresponds to the length direction of the rod.

[0048] As used in the present application, the singular forms "a", "an" and "the" include plural referents, the term "or" is generally used in the sense of "and / or", the term "at least one" is generally used in the sense of "one or more", the term "at least two" is generally used in the sense of "two or more", and in addition, the terms "first", "second", "third" are only for the purpose of description, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features limited by "first", "second", "third" can explicitly or implicitly include one or at least two features. In addition, as used in the present application, "mounting", "connecting", "connecting", "setting" one element in another element should be understood broadly, and generally only indicates that there is a connection, coupling, cooperation or transmission relationship between the two elements, and the two elements can be directly or indirectly connected, coupled, cooperated or transmitted through intermediate elements, and cannot be understood as indicating or implying the spatial position relationship between the two elements, i.e. one element can be in any direction inside, outside, above, below or one side of another element, unless the content is otherwise explicitly indicated. For ordinary skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances. In addition, directional terms such as above, below, up, down, upward, downward, left, right, etc. are used relative to the exemplary embodiments as they are shown in the drawings, upward or upward direction is towards the top of the corresponding drawing, and downward or downward direction is towards the bottom of the corresponding drawing.

[0049] The reaction cavity in the existing epitaxial process equipment is provided with a bearing seat for bearing a wafer, which divides the reaction cavity into two chambers (a first chamber and a second chamber), wherein the first chamber is a part of the reaction cavity near one side of a bearing surface of the bearing seat, and the second chamber is a part of the reaction cavity away from one side of the bearing surface of the bearing seat. The epitaxial gas inlet also has the function of introducing epitaxial gas, so the epitaxial gas inlet is usually communicated with the first chamber. Therefore, when the cleaning and etching gas is introduced through the epitaxial gas inlet, it is difficult to obtain a high concentration of cleaning and etching gas flow in the second chamber, which ultimately leads to the difficulty of cleaning and etching the inner wall of the second chamber and the components located in the chamber by the cleaning and etching process, thereby leading to poor cleaning effect of the attached matter.

[0050] Moreover, the epitaxial process equipment is usually provided with a silicon wafer channel communicated with the second chamber, which is used for the wafer to enter and exit. When the cleaning and etching gas is introduced through the epitaxial gas inlet, it is usually necessary to adjust the height of the bearing seat to introduce the cleaning and etching gas into the second chamber, which makes the control of the cleaning process more complex. Moreover, because the bearing seat is adjusted, it is easy to cause turbulence, so that the cleaning and etching gas introduced into the second chamber flows into the silicon wafer channel uncontrollably and lingers in the channel, causing excessive etching in the channel.

[0051] Based on this, an epitaxial equipment is provided in the embodiment; comprising a housing assembly 10 and a bearing seat 20;

[0052] The housing assembly 10 has a reaction cavity. The housing assembly 10 is the main body of the epitaxial process equipment, which not only encloses the reaction cavity of the epitaxial process equipment, but also provides a mounting base for other components of the epitaxial process equipment.

[0053] In combination Figure 1 As shown in the figure, the housing assembly 10 comprises an outer ring 101, an inner ring 102, an upper base ring 103, a lower base ring 104, and an upper cover 105 and a lower cover 106.

[0054] The inner ring 102 is coaxially arranged with the outer ring 101, and the outer peripheral surface of the inner ring 102 is sealingly fitted to the inner peripheral surface of the outer ring 101.

[0055] Figure 1 In the embodiment, the central axes of the outer ring 101 and the inner ring 102 extend vertically, the upper cover 105 covers the axial upper end of the outer ring 101 and closes the upper part of the outer ring 101, and the lower cover 106 covers the axial lower end of the outer ring 101 and closes the lower part of the outer ring 101, so that the reaction cavity is formed by the outer ring 101, the upper cover 105 and the lower cover 106.

[0056] Specifically, as Figure 1As shown, the upper cover 105 is a quartz cover, and the middle part thereof is arched upward. The edge of the upper cover 105 has a horizontal annular upper support platform 1051, which is supported on the upper end of the outer ring 101. The upper base ring 103 is connected to the upper end of the outer ring 101, and the upper base ring 103 and the outer ring 101 clamp and fix the annular upper support platform 1051, thereby fixing the upper cover 105.

[0057] Similarly, as shown, the lower cover 106 is a quartz cover, and the middle part thereof is a conical body downward. The edge of the lower cover 106 has a horizontal annular lower support platform 1061, which is supported on the upper end of the lower base ring 104. The lower base ring 104 is connected to the lower end of the outer ring 101, and the lower base ring 104 and the outer ring 101 clamp and fix the annular lower support platform 1061, thereby fixing the lower cover 106. Figure 1

[0058] Wherein the outer ring 101, the inner ring 102, the upper base ring 103, the lower base ring 104, and the upper cover 105 and the lower cover 106 are coaxially arranged.

[0059] In this embodiment, the shell assembly 10 is a split structure composed of the outer ring 101, the inner ring 102, the upper base ring 103, the lower base ring 104, and the upper cover 105 and the lower cover 106. In other alternative embodiments, the shell assembly 10 can also be flexibly adjusted in its specific structure and shape based on actual use requirements.

[0060] Please continue to refer to Figure 1 As shown, the carrier seat 20 is arranged in the reaction cavity; the carrier seat 20 is coaxially arranged with the outer ring 101.

[0061] The upper surface of the carrier seat 20 is a carrier surface 21, which is used to place a wafer. In addition, the lower end of the carrier seat 20 is connected with a carrier rod 22. The carrier rod 22 is used to support the carrier seat 20 and drive the carrier seat 20 to rotate and lift (move along the axial direction of the outer ring 101).

[0062] In addition, the carrier seat 20 is also equipped with a thimble 23, which can be lifted to pass through the carrier seat 20 for adsorption and fixing and wafer transfer. The thimble 23 is arranged on a thimble rod 24, the thimble rod 24 is sealed through the lower cover 106 and connected with an external driving device, and the thimble rod 24 is a hollow structure. The carrier rod 22 axially passes through the thimble rod 24 to the outside of the reaction cavity and is connected with an external driving device.

[0063] The carrier seat 20, the carrier rod 22, the thimble 23, and the thimble rod 24 can be consistent with the existing structure, which will not be described here.

[0064] ​In this embodiment, the carrier 20 is disk-shaped, adapted to support a circular wafer. In other alternative embodiments, the shape of the carrier 20 can be adjusted based on epitaxial requirements and the shape adaptability of the device to be supported.

[0065] The support base 20 can be an electrostatic chuck, and it can be made of materials such as SiC (silicon carbide). Of course, it can also be a support structure with other specific structures. This embodiment does not limit the specific type of support base 20.

[0066] In the epitaxial process described above, the wafer is fed into the reaction chamber and supported on the bearing surface 21 of the support pedestal 20. The wafer is heated by heating structures located on the upper side (not shown) and the lower side (not shown) of the support pedestal 20. Epitaxial raw material gas (e.g., silicon source gas) is supplied to the reaction chamber and flows over the surface of the wafer, thereby performing vapor phase growth. After vapor phase growth is complete, the epitaxial wafer obtained through vapor phase growth is removed from the reaction chamber. During the growth process, the support rod 22 serves to fix the support pedestal 20 and drive its rotation, thereby causing the wafer to rotate and uniformly contact the epitaxial gas, ensuring that epitaxial growth occurs uniformly on the wafer surface.

[0067] Please continue to refer to this. Figure 1 As shown, along the direction perpendicular to the bearing surface 21 of the bearing seat 20 ( Figure 1 The vertical direction in the middle (which is also the axial direction of the outer ring 101) and the bearing seat 20 divide the reaction chamber to form a first chamber 11 and a second chamber 12. Figure 1 In this configuration, the support 20 is not sealed to the inner wall of the reaction chamber; that is, there is a gap between the support 20 and the inner wall of the reaction chamber, allowing the first chamber 11 and the second chamber 12 to be substantially connected. The first chamber 11 is located above the support 20, meaning it is the portion of the reaction chamber closest to the support surface 21; the second chamber 12 is located below the support 20, meaning it is the portion of the reaction chamber furthest from the support surface 21.

[0068] In this embodiment, the upper half (first chamber 11) of the reaction chamber of the housing assembly 10 is generally cylindrical, and the lower half (second chamber 12) is generally conical. In other alternative embodiments, the reaction chamber of the housing assembly 10 can be configured with other shapes, and the specific shape of the reaction chamber can be adjusted based on epitaxial requirements and the shape adaptability of the wafer to be epitaxialized.

[0069] Please continue to refer to this. Figure 1As shown, the housing assembly 10 is provided with a first gas inlet channel 13 and a second gas inlet channel 14, the first gas inlet channel 13 is in communication with the first chamber 11, and the second gas inlet channel 14 is in communication with the second chamber 12.

[0070] Please refer to Figure 1 As shown, the outer ring 101 is provided with a first channel 131, the upper end of the inner ring 102 is provided with a first recess 1021, and the upper edge of the upper cover 105 is provided with a second recess 1052 corresponding to the position of the first recess 1021, the first recess 1021 and the second recess 1052 are buckled to form a second channel 132, and the first channel 131 and the second channel 132 are in communication to form the first gas inlet channel 13.

[0071] Please refer to Figure 1 As shown, the outer ring 101 is provided with an outer channel (third channel 141), and the inner ring 102 is provided with an inner channel (fourth channel 142), the third channel 141 and the fourth channel 142 are in communication and constitute the second gas inlet channel 14.

[0072] The above-mentioned epitaxial device is provided with a first gas inlet channel 13 and a second gas inlet channel 14, wherein the first gas inlet channel 13 is in communication with the first chamber 11, and the second gas inlet channel 14 is in communication with the second chamber 12. When the reaction chamber of the epitaxial device needs to be cleaned by cleaning etching gas, the cleaning etching gas can be introduced into the first chamber 11 through the first gas inlet channel 13 and introduced into the second chamber 12 through the second gas inlet channel 14. The amount and concentration of the gas introduced into the first chamber 11 and the second chamber 12 can be flexibly adjusted based on the cleaning requirements to ensure better cleaning effect.

[0073] In addition, the first gas inlet channel 13 and the second gas inlet channel 14 can respectively and independently introduce cleaning etching gas into the first chamber 11 and the second chamber 12. During the cleaning process, the carrier 20 does not need to be lifted to drain the cleaning etching gas to distribute the amount of gas in the first chamber 11 and the second chamber 12, which helps to simplify the cleaning process and the cleaning control process, and the carrier 20 does not interfere with the flow of cleaning etching gas and does not cause local turbulence of cleaning etching gas, thereby improving the phenomenon of excessive etching caused by too long local residence time of cleaning etching gas.

[0074] In this embodiment, the first gas inlet channel 13 is formed by the inner ring 102 and the upper cover 105, and the shape of the first gas inlet channel 13 can be flexibly adjusted by combining different specifications of the inner ring 102 and the upper cover 105. In other alternative embodiments, the first gas inlet channel 13 can be directly formed on the outer ring 101 and the inner ring 102, or the formation mode of the first gas inlet channel 13 can be adaptively adjusted based on the specific structure of the housing assembly 10.

[0075] In this embodiment, the second air intake channel 14 consists of channels formed on the outer ring 101 and the inner ring 102. In other alternative embodiments, the second air intake channel 14 can be configured as an integral structure, and the arrangement of the second air intake channel 14 can be adaptively adjusted based on the specific structure of the housing assembly 10.

[0076] Please continue to refer to this. Figure 1 As shown, the housing assembly 10 is also provided with a first exhaust channel 15 and a second exhaust channel 16.

[0077] The first exhaust passage 15 is connected to the first chamber 11, and the second exhaust passage 16 is connected to the second chamber 12.

[0078] Please refer to Figure 1 As shown, a fifth channel 151 is provided on the outer ring 101, a third groove 1023 is provided at the upper end of the inner ring 102, and a fourth groove 1053 is provided on the edge of the upper cover 105 corresponding to the position of the third groove 1023. The third groove 1023 and the fourth groove 1053 are engaged to form a sixth channel 152. The fifth channel 151 and the sixth channel 152 are connected to form a first exhaust channel 15.

[0079] Please continue to refer to this. Figure 1 As shown, a seventh channel 161 is provided on the outer ring 101, and an eighth channel 162 is provided on the inner ring 102. The seventh channel 161 and the eighth channel 162 are connected to form the second exhaust channel 16.

[0080] The outlet of the first intake passage 13 and the inlet of the first exhaust passage 15 are along the first direction a ( Figure 1 The bearing 20 is positioned between the outlet of the first intake channel 13 and the inlet of the first exhaust channel 15, with the outlet of the first intake channel 13 and the inlet of the first exhaust channel 15 slightly higher than the bearing surface 21. This arrangement ensures that the epitaxial gas introduced through the first intake channel 13 flows smoothly through the bearing surface 21 of the bearing 20 and is discharged smoothly through the first exhaust channel 15, preventing the gas after the epitaxial reaction from remaining in the first chamber 11 and affecting the epitaxial process.

[0081] The cross-sectional size of the second exhaust passage 16 is the same as that of the second intake passage 14 to ensure relatively stable intake and exhaust damping. The second intake passage 14 and the second exhaust passage 16 are along the first direction a( Figure 1 The two chambers are arranged with their left and right directions opposite each other, with the first direction a parallel to the bearing surface 21. This arrangement can improve the over-etching phenomenon caused by gas retention in the second chamber 12.

[0082] Please continue to refer to this.Figure 1 As shown, the epitaxial apparatus further comprises a flow controller 30, which is arranged in the first gas inlet channel 13 and the second gas inlet channel 14.

[0083] The flow controller 30 can be a double-inlet double-outlet valve, for example, one inlet of which is communicated with the epitaxial gas source, the other inlet of which is communicated with the cleaning etching gas source, one outlet of which is communicated with the first gas inlet channel 13, and the other outlet of which is communicated with the second gas inlet channel 14. When the epitaxial process is performed, the epitaxial gas is introduced and passed through the first gas inlet channel 13 to the first chamber 11; when the cleaning process is performed, the cleaning etching gas is introduced and passed through the first gas inlet channel 13 and the second gas inlet channel 14 to the first chamber 11 and the second chamber 12, respectively, and the gas flow into the first chamber 11 and the second chamber 12 can be controlled by the opening degree of the two outlets of the flow controller 30.

[0084] In other alternative embodiments, the flow controller 30 can also be two valves respectively arranged in the first gas inlet channel 13 and the second gas inlet channel 14, or one valve arranged in the first gas inlet channel 13 or the second gas inlet channel 14. The flow controller 30 can also adopt other known flow control structures, which are not described herein.

[0085] Please continue to refer to Figure 1 As shown, the epitaxial apparatus further comprises a preheating ring 40, which is arranged around the carrier 20 and coaxial with the carrier 20, and the inner diameter of the preheating ring 40 is larger than the outer diameter of the carrier 20, so that there is an annular gap between the two in the radial direction, which makes the first chamber 11 and the second chamber 12 not completely independent, and the two form a partial communication structure.

[0086] As shown, Figure 1 The inner ring 102 has an annular recessed area 1022 near the inner side of the upper end thereof, and the preheating ring 40 is located in the recessed area 1022, and the inner diameter of the preheating ring 40 is smaller than the inner diameter of the inner ring 102, and the outer diameter of the preheating ring 40 is smaller than the outer diameter of the inner ring 102 and larger than the inner diameter of the inner ring 102, so that a part of the preheating ring 40 is carried in the recessed area 1022, and the other part is in a suspended state in the inner ring 102.

[0087] The inner ring 102 not only cooperates with the outer ring 101 to form the first gas inlet channel and the second gas inlet channel, but also has the function of supporting the preheating ring 40, realizing one object with multiple functions of the inner ring 102, and being conducive to reducing the internal components of the epitaxial apparatus and simplifying the structure of the epitaxial process apparatus.

[0088] The preheating ring 40 is an electric heating ring, for example, which can heat the introduced gas, such as the introduced epitaxial gas or cleaning etching gas.

[0089] The first gas inlet passage 13 and the second gas inlet passage 14 are arranged on both sides of the preheating ring 40 in the direction perpendicular to the bearing surface 21 (axial direction of the outer ring 101), so that the preheating ring 40 can heat the gas introduced by the first gas inlet passage 13 and the second gas inlet passage 14.

[0090] Please continue to refer to Figure 1 As shown, the cross-sectional area of the first gas inlet passage 13 perpendicular to the length direction thereof is greater than the cross-sectional area of the second gas inlet passage 14 perpendicular to the length direction thereof. That is, the channel of the first gas inlet passage 13 is thicker, and the channel of the second gas inlet passage 14 is thinner. Generally, there are more attachments in the first chamber 11, and there are relatively fewer attachments in the second chamber 12. The thicker channel of the first gas inlet passage 13 can meet the requirement of introducing the epitaxial gas and the requirement of cleaning the first chamber 11; and the thinner channel of the second gas inlet passage 14 can be used for introducing the cleaning etching gas and meet the requirement of cleaning the second chamber 12.

[0091] In the embodiment, the first gas inlet passage 13 and the second gas inlet passage 14 can be circular hole passages or passages of other shapes, for example, the first gas inlet passage 13 and the second gas inlet passage 14 can be elongated passages extending perpendicular to the paper surface direction in the embodiment. Figure 1 In the embodiment, the first gas inlet passage 13 and the second gas inlet passage 14 can be circular hole passages or passages of other shapes, for example, the first gas inlet passage 13 and the second gas inlet passage 14 can be elongated passages extending perpendicular to the paper surface direction in the embodiment.

[0092] The bearing seat 20 has a first side surface 25; the first side surface 25 is opposite to the bearing surface 21 in the direction perpendicular to the bearing surface 21 of the bearing seat 20. In combination with the above description of the preheating ring 40, the first side surface 25 is opposite to the first gas inlet passage 13 and the second gas inlet passage 14. Figure 1 As shown, the first side surface 25 is the lower end surface of the bearing seat 20, and the bearing surface 21 is the upper end surface of the bearing seat 20.

[0093] In the direction perpendicular to the bearing surface 21, the distance between the outlet of the first gas inlet passage 13 and the bearing surface 21 is less than the distance between the outlet of the second gas inlet passage 14 and the first side surface 25. Here, the distance between the outlet and the surface can be considered as the distance between the geometric center point of the outlet and the surface.

[0094] The distance between the outlet of the first gas inlet passage 13 and the bearing surface 21 is small, so that the epitaxial gas can flow through the upper surface of the wafer on the bearing surface 21 after passing through the outlet of the first gas inlet passage 13, so as to obtain a better epitaxial effect. In addition, the height of the first chamber 11 is generally small, so that the cleaning etching gas can also meet the cleaning requirement of each position in the first chamber 11.

[0095] The outlet of the second gas inlet channel 14 is far away from the first side surface 25, so that the cleaning etching gas introduced through the second gas inlet channel 14 is relatively far away from the first chamber 11, and the diffusion of the cleaning etching gas from the second chamber 12 into the first chamber 11 is improved. In addition, the lower cover 106 is generally used for the wafer to enter and exit, the second chamber 12 is generally high, and the second gas inlet channel 14 is slightly far away from the first side surface 25, which is helpful to uniformly diffuse the cleaning etching gas introduced through the second gas inlet channel 14 in the second chamber 12, so as to achieve a better cleaning effect.

[0096] Please continue to refer to Figure 1 As shown, the outlet of the first gas inlet channel 13 and the outlet of the second gas inlet channel 14 are horizontally arranged. The outlet of the first gas inlet channel 13 and the outlet of the second gas inlet channel 14 are parallel to the bearing surface 21.

[0097] The outlet of the first gas inlet channel 13 is horizontally arranged, and the bearing surface 21 is also a horizontal surface, so that the outlet of the first gas inlet channel 13 is also parallel to the bearing surface 21. This arrangement can make the epitaxial gas introduced flow parallel to the upper surface of the wafer on the bearing surface 21, so as to achieve a better epitaxial effect, and can also make the cleaning etching gas introduced uniformly diffuse in the first chamber 11, so as to achieve a better cleaning effect. The outlet of the second gas inlet channel 14 is horizontally arranged and parallel to the bearing surface 21, which can also make the cleaning etching gas introduced uniformly diffuse in the second chamber 12, so as to achieve a better cleaning effect.

[0098] Please continue to refer to Figure 1 As shown, the first gas inlet channel 13 has a whole bending structure based on its forming mode, the inlet and the outlet of the first gas inlet channel 13 are horizontal and parallel to the bearing surface 21, and the middle part of the first gas inlet channel 13 has a bending structure, so that the first gas inlet channel 13 has a whole Z-shaped structure. The second gas inlet channel 14 has a whole horizontal channel, so as to facilitate the processing of the second gas inlet channel 14. The channel cross section of the second gas inlet channel 14 is small, and the second gas inlet channel 14 is arranged as a straight channel, which can also reduce the gas resistance and prevent the local gas resistance from suddenly changing to cause poor gas introduction.

[0099] In other alternative embodiments, the first gas inlet channel 13 can be arranged as a whole horizontal structure, or the second gas inlet channel 14 can be arranged as a local bending structure. The overall shape of the first gas inlet channel 13 and the second gas inlet channel 14 can be flexibly adjusted based on actual use requirements and the assembly mode of each component.

[0100] In other alternative embodiments, one of the outlet of the first gas inlet channel 13 and the outlet of the second gas inlet channel 14 can be arranged at an angle with the supporting surface 21, for example, the outlet of the second gas inlet channel 14 can be arranged at an angle with the supporting surface 21 based on its cleaning requirement, i.e. the outlet of the second gas inlet channel 14 is arranged at an angle with the horizontal plane. The arrangement of the outlet of the first gas inlet channel 13 and the outlet of the second gas inlet channel 14 can be flexibly adjusted based on the epitaxial requirement and the cleaning requirement.

[0101] Please continue to refer to Figure 1 As shown, the inlet of the first gas exhaust channel 15 and the inlet of the second gas exhaust channel 16 are horizontally arranged. The inlet of the first gas exhaust channel 15 and the inlet of the second gas exhaust channel 16 are parallel to the supporting surface 21.

[0102] The inlet of the first gas exhaust channel 15 is horizontally arranged, and the supporting surface 21 is also a horizontal plane, so the inlet of the first gas exhaust channel 15 is also parallel to the supporting surface 21, and the outlet of the first gas inlet channel 13 and the inlet of the first gas exhaust channel 15 are oppositely arranged along the first direction a (left-right direction), and the first direction a is parallel to the supporting surface 21. This arrangement can make the epitaxial gas passing through the outlet of the first gas inlet channel 13 enter the wafer on the supporting surface 21 in parallel, and then be horizontally discharged through the inlet of the first gas exhaust channel 15, i.e. the outlet of the first gas inlet channel 13 and the inlet of the first gas exhaust channel 15 determine that the basic flow path of the epitaxial gas is parallel to the supporting surface 21, so as to achieve a better epitaxial effect. Figure 1

[0103] The inlet of the second gas exhaust channel 16 is horizontally arranged and parallel to the supporting surface 21, and the inlet of the second gas exhaust channel 16 and the outlet of the second gas inlet channel 14 are oppositely arranged along the first direction a (left-right direction), and the first direction a is parallel to the supporting surface 21. The cross section of the second gas inlet channel 14 is small, and this arrangement can make the cleaning etching gas passing through the outlet of the second gas inlet channel 14 enter the second chamber 12 and uniformly spread in the second chamber 12, and after staying in the second chamber 12 for an appropriate time, it is discharged through the inlet of the second gas exhaust channel 16, so as to achieve a better cleaning effect. Figure 1 Please continue to refer to

[0104] Figure 1 ​​As shown, the first exhaust passage 15 is in a whole bending structure based on its forming mode, the inlet and the outlet of the first exhaust passage 15 are horizontal and parallel to the bearing surface 21, the middle part of the first exhaust passage 15 has a bending structure, so that the first exhaust passage 15 is in a whole Z-shaped structure. The second exhaust passage 16 is in a whole horizontal passage, so as to facilitate the processing of the second exhaust passage 16, the passage section of the second exhaust passage 16 is small, and the second exhaust passage 16 is arranged as a straight passage, so as to reduce the gas resistance and prevent the local gas resistance from being suddenly changed to cause poor ventilation.

[0105] In other alternative embodiments, the first exhaust passage 15 can be arranged as a whole horizontal structure, or the second exhaust passage 16 can be arranged as a local bending structure. The whole shape of the first exhaust passage 15 and the second exhaust passage 16 can be flexibly adjusted based on the actual use requirement and the assembly mode of each component.

[0106] In other alternative embodiments, among the inlet of the first exhaust passage 15 and the inlet of the second exhaust passage 16, one can be arranged at an angle with the bearing surface 21, for example, the inlet of the second exhaust passage 16 can be arranged at an angle with the bearing surface 21 based on its cleaning requirement, that is, the inlet of the second exhaust passage 16 is arranged at an angle with the horizontal plane. The arrangement mode of the inlet of the first exhaust passage 15 and the inlet of the second exhaust passage 16 can be flexibly adjusted based on the extension requirement and the cleaning requirement.

[0107] The above description is only the description of the preferred embodiments of the utility model, and does not limit the scope of the utility model, any change and modification of the utility model made by the ordinary skilled in the art according to the above disclosure are within the protection scope of the claims.

Claims

1. An epitaxial device, characterized in that, The application relates to an epitaxial device. The epitaxial device comprises: a housing assembly and a carrier seat; the housing assembly has a reaction cavity; the carrier seat is arranged in the reaction cavity; the carrier seat has a carrier surface, and the carrier seat divides the reaction cavity into a first cavity and a second cavity along a direction perpendicular to the carrier surface; 2. The epitaxial apparatus of claim 1, wherein, the housing assembly is provided with a first air inlet channel and a second air inlet channel, the first air inlet channel is communicated with the first cavity, and the second air inlet channel is communicated with the second cavity. The first cavity is a part of the reaction cavity close to the carrier surface, and the second cavity is a part of the reaction cavity away from the carrier surface; 3. The epitaxial apparatus of claim 1, wherein, a cross-sectional area of the first air inlet channel along a direction perpendicular to the length direction of the first air inlet channel is greater than a cross-sectional area of the second air inlet channel along a direction perpendicular to the length direction of the second air inlet channel. The first cavity is a part of the reaction cavity close to the carrier surface, and the second cavity is a part of the reaction cavity away from the carrier surface; 4. The epitaxial apparatus of claim 1, wherein, the carrier seat has a first side surface, the first side surface is opposite to the carrier surface along a direction perpendicular to the carrier surface, and a distance between an outlet of the first air inlet channel and the carrier surface is less than a distance between an outlet of the second air inlet channel and the first side surface.

5. The epitaxial apparatus of claim 4, wherein, The outlet of the first air inlet channel and / or the outlet of the second air inlet channel is parallel to the carrier surface.

6. The epitaxial apparatus of claim 1, wherein, The outlet of the first air inlet channel and / or the outlet of the second air inlet channel is arranged horizontally. The housing assembly is provided with a first air outlet channel and a second air outlet channel; 7. The epitaxial apparatus of claim 6, wherein, the first air outlet channel is communicated with the first cavity, and the second air outlet channel is communicated with the second cavity.

8. The epitaxial apparatus of claim 1, wherein, The second air inlet channel and the second air outlet channel are oppositely arranged along a first direction, and the first direction is parallel to the carrier surface.

9. The epitaxial apparatus of claim 1, wherein, The epitaxial device further comprises a flow controller, and the flow controller is arranged in the first air inlet channel and / or the second air inlet channel. The epitaxial device further comprises a preheating ring, and the preheating ring is arranged around the carrier seat; 10. The epitaxial apparatus of claim 1, wherein, the first air inlet channel and the second air inlet channel are arranged on two sides of the preheating ring along a direction perpendicular to the carrier surface. The housing assembly comprises an outer ring and an inner ring, and an outer circumferential surface of the inner ring is sealingly fitted to an inner circumferential surface of the outer ring; an outer channel is formed in the outer ring, and an inner channel is formed in the inner ring, the outer channel and the inner channel are communicated and constitute the second air inlet channel.

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