Semiconductor epitaxial wafer device with burr improving function
By fixing the crystal with a rotating disk and magnetic clamping plate structure, combined with a uniform heating design, the problems of uneven temperature and crystal displacement are solved, achieving uniform growth of the thin film and avoiding burrs.
Patent Information
- Application Number
- CN202520162511.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-23
- Publication Date
- 2025-12-26
- Estimated Expiration
- 2035-01-23
AI Technical Summary
In existing semiconductor epitaxy processes, uneven temperature distribution leads to the formation of burrs, and the crystal is prone to displacement during rotation, resulting in uneven film growth.
The crystal is fixed by a rotating disk and magnetic clamp structure, combined with a spirally wound heating tube and diverging copper wire to ensure uniform temperature distribution. The crystal is driven to rotate synchronously by a drive component to avoid local overheating or overcooling.
It achieves uniform film growth, avoids the generation of burrs, adapts to the fixation of crystals of different specifications, and ensures that the film grows consistently on the crystal surface.
Smart Images
Figure CN223723282U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to the technical field of semiconductor wafer production, specifically to a semiconductor epitaxial wafer device with improved burr function. BACKGROUND
[0002] Semiconductor wafers are key materials in semiconductor device manufacturing, mainly used for making integrated circuits, sensors, solar cells and other semiconductor devices. Wafers are usually made of semiconductor materials such as silicon and gallium arsenide, and are processed into electronic devices through a series of complex process steps such as epitaxial growth, photolithography, and etching.
[0003] Semiconductor epitaxial growth equipment is an important device in the semiconductor manufacturing process. It grows a new thin film on an existing semiconductor crystal substrate through a gas phase, liquid phase, or solid phase chemical reaction process. The crystal structure of this thin film is completely aligned with the substrate and has a high-quality lattice structure. The inventor found the following problems in the prior art during the implementation of the utility model:
[0004] 1. During epitaxial growth, the crystals are in a stationary state, and the heating components are distributed at the bottom. The temperature distribution is uneven during the entire chemical reaction process, causing local areas to grow too quickly or too slowly, which in turn produces burrs or irregular thin film morphology at the edges.
[0005] 2. Different crystal sizes are not the same. The existing device does not have a structure to limit the crystal itself. Once the crystal rotates, it is easy to displace, which also causes uneven mist growth. INVENTION CONTENTS
[0006] The utility model aims to provide a semiconductor epitaxial wafer device with improved burr function to solve the problem of uneven temperature distribution in the reaction chamber, burrs on the periphery of the thin film, and the inability to fix the crystal, which leads to uneven thin film growth. To achieve the above purpose, the utility model provides the following technical scheme: a semiconductor epitaxial wafer device with improved burr function, comprising a reaction chamber, a sealing cover is provided at the top of the reaction chamber, a gas pipe is inserted into the middle of the sealing cover, a graphite disc is installed inside the reaction chamber, an assembly component is provided on the upper surface of the graphite disc, a drive component is provided on the lower surface of the graphite disc, a heating pipe is embedded in the inner wall of the reaction chamber, and a copper wire is laid on the surface of the graphite disc.
[0007] The assembly component includes a disc, a left clamping plate and a right clamping plate are slidably connected inside the disc, and an X bracket is provided in the lower surface of the left and right clamping plates.
[0008] The drive component includes a pinion, a large gear is engaged on one side of the pinion, and the output shaft of a drive motor is installed at the bottom of the large gear.
[0009] Further preferably, the left and right clamping plates are symmetrical relative to the central axis of the disc, and the left and right clamping plates are provided with a magnetic attraction structure.
[0010] Further preferably, the middle part of the X-shaped support is rotatably connected to the middle part of the inner wall of the disc.
[0011] Further preferably, the small gear is provided with an axle rod welded to the inner wall of the small gear, and the disc is connected to the small gear through the axle rod.
[0012] Further preferably, the small gear is provided with six small gears, and the small gears are equiangularly distributed relative to the central axis of the large gear, and the large gear is rotatably connected to the lower surface of the graphite disc.
[0013] Further preferably, the heating pipe is spirally wound on the inner wall of the reaction chamber, and the heating pipe is located above the graphite disc.
[0014] Further preferably, the copper wire is provided with a plurality of copper wires, and the copper wires are distributed in a divergent manner.
[0015] Compared with the prior art, the utility model has the advantages of:
[0016] In the utility model, the disc at the top of the driving assembly is synchronously rotated at a uniform speed, the rotation of the disc can make the crystal surface uniformly contact the heating source, local overheating or cooling is avoided, the heating pipe wound in a spiral manner can uniformly distribute heat on the inner wall of the reaction chamber, the copper wire distributed in a divergent manner increases the uniform heat conduction function of the graphite disc, the temperature distribution in the reaction chamber is more uniform, the growth rate of the thin film on the crystal surface is consistent, and irregular burrs are avoided.
[0017] In the utility model, the middle part of the X-shaped support is limited in the middle part of the inner wall of the disc, the two ends of the X-shaped support are simultaneously expanded or close to each other, and the left and right clamping plates are further driven to synchronously expand and store, the left and right clamping plates are close to each other through the attraction of the magnetic force, the crystal in the middle is clamped and fixed according to the flexible adjustment of the crystal specifications of different specifications, the crystal is fixed by the left and right clamping plates when the small gear rotates, and displacement does not occur, and the thin film growth is more uniform. BRIEF DESCRIPTION OF DRAWINGS
[0018] Figure 1 It is a sectional structure schematic view of the utility model;
[0019] Figure 2 It is an explosion structure schematic view of the utility model;
[0020] Figure 3 It is a graphite disc and assembly component structure schematic view of the utility model;
[0021] Figure 4 It is a driving assembly structure schematic view of the utility model.
[0022] Figure 5 It is an assembly component structure schematic view of the utility model.
[0023] In the drawing: 1, reaction chamber; 2, sealing cover; 3, air pipe; 4, graphite disc; 5, assembly component; 501, disc; 502, left clamping plate; 503, right clamping plate; 504, X support; 6, driving assembly; 601, pinion; 602, gear; 603, driving motor; 7, heating pipe; 8, copper wire. DETAILED DESCRIPTION
[0024] The technical solutions in the embodiments of the utility model will be clearly and completely described below with reference to the drawings in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by the ordinary skill in the art without creative labor fall within the scope of the utility model.
[0025] Please refer to Figures 1 to 5 The utility model provides a kind of technical solutions: a semiconductor epitaxial wafer device with the function of improving raw edge, including reaction chamber 1, the top of reaction chamber 1 is equipped with sealing cover 2, sealing cover 2 is inserted with air pipe 3 in middle part, the inside of reaction chamber 1 is installed with graphite disc 4, the upper surface of graphite disc 4 is equipped with assembly component 5, the lower surface of graphite disc 4 is equipped with driving assembly 6, the inner wall of reaction chamber 1 is embedded with heating pipe 7, the surface of graphite disc 4 is paved with copper wire 8.
[0026] Assembly component 5 includes disc 501, the inside of disc 501 is slidably connected with left clamping plate 502 and right clamping plate 503, and X support 504 is arranged in the lower surface of left clamping plate 502 and right clamping plate 503.
[0027] Driving assembly 6 includes pinion 601, and the side of pinion 601 is engaged with gear 602, and the output shaft of driving motor 603 is installed at the bottom of gear 602.
[0028] In the embodiment, as Figure 3 And Figure 5As shown, the left clamping plate 502 and the right clamping plate 503 are symmetrical about the central axis of the disc 501, and the left clamping plate 502 and the right clamping plate 503 are provided as a magnetic attraction structure; it should be noted that the cross section of the left clamping plate 502 and the right clamping plate 503 is arc-shaped, and the magnetic force is used to attract each other, so that the middle crystal is clamped and fixed, and the bottom of the left clamping plate 502 and the right clamping plate 503 is provided with a protruding clamping block, which slides along the sliding groove on the surface of the disc 501, and limits the left clamping plate 502 and the right clamping plate 503, so that it remains parallel displacement.
[0029] In this embodiment, as shown in Figure 3 and Figure 5 , the middle part of the X support 504 is connected to the inner wall of the disc 501 in a rotating manner; it should be noted that the middle support point of the X support 504 is fixed, and the X support 504 is telescopic, and the center point does not change, and the two ends are expanded or close at the same time, further driving the left clamping plate 502 and the right clamping plate 503 to expand and retract synchronously, which can be flexibly adjusted according to the specifications of different crystals.
[0030] In this embodiment, as shown in Figure 3 and Figure 4 , the inner wall of the pinion 601 is welded with a shaft, and the disc 501 is connected with the pinion 601 through the shaft; it should be noted that the shaft is connected with the graphite disc 4 in a rotating manner, and when the pinion 601 rotates, the disc 501 at the top rotates synchronously at a constant speed, and the rotation of the disc 501 can make the crystal surface uniformly contact the heating source, avoid local overheating or cooling, avoid uneven heating, and avoid irregular burrs.
[0031] In this embodiment, as shown in Figure 4 , the pinion 601 is provided with six pinions, and the pinions 601 are equally distributed about the central axis of the gear 602, and the gear 602 and the lower surface of the graphite disc 4 are connected in a rotating manner; it should be noted that the six pinions 601 are driven by a gear 602, and the six pinions 601 ensure consistent movement rhythm and drive six crystals to rotate synchronously.
[0032] In this embodiment, as shown in Figure 1 and Figure 2 , the heating pipe 7 is spirally wound and distributed on the inner wall of the reaction chamber 1, and the heating pipe 7 is located above the graphite disc 4; it should be noted that the spirally wound heating pipe 7 can uniformly distribute heat on the inner wall of the reaction chamber 1, and ensure that the temperature distribution in the reaction chamber 1 is more uniform.
[0033] In this embodiment, as shown in Figure 3As shown, the copper wires 8 are provided in plurality and are distributed in divergent manner; it is to be noted that the divergent distribution of the copper wires 8 increases the function of the graphite disc 4 to uniformly conduct heat, so that the heat source on the surface of the graphite disc 4 is more evenly diverged, and there are gaps between the copper wires 8, and the gaps are convenient for the shaft rod of the gear inner wall to pass through.
[0034] The use method and advantages of the utility model are as follows:
[0035] As shown in Figure 1 , Figure 2 , Figure 3 , Figure 4 and Figure 5 , first, the crystal is placed in the middle of the disc 501, the left pressing plate is pressed, the X support 504 is extended, the right clamping plate 503 is synchronously moved to clamp the crystal in the middle, the sealing cover 2 is closed, the mixed gas such as ammonia gas is injected through the left gas pipe 3, the heating pipe 7 is powered and heated through the external power supply, the driving motor 603 is started, the large gear 602 is rotated, the six small gears 601 meshed with the large gear 602 start to rotate in reverse at a uniform speed, further driving the disc 501 and the crystal to rotate at a uniform speed, under high temperature, fully mixed, chemical reaction occurs in the reaction chamber 1, a layer of film is generated on the surface of the crystal, and the waste gas is discharged through the right gas pipe 3.
[0036] The basic principle, main features and advantages of the utility model are shown and described above. The technical workers in the industry should understand that the utility model is not limited by the above examples, and the above examples and descriptions in the specification are only preferred examples of the utility model and do not limit the utility model, and various changes and improvements of the utility model can be made without departing from the spirit and scope of the utility model, and these changes and improvements all fall within the scope of the claimed utility model. The scope of protection of the utility model is defined by the appended claims and their equivalents.
Claims
1. A semiconductor wafer apparatus having improved edge function, comprising a reaction chamber (1), characterized in that: The top of the reaction chamber (1) is provided with a sealing cover (2), both ends of the sealing cover (2) are inserted with air pipes (3), the inside of the reaction chamber (1) is provided with a graphite disc (4), the upper surface of the graphite disc (4) is provided with an assembly component (5), the lower surface of the graphite disc (4) is provided with a driving component (6), the inner wall of the reaction chamber (1) is embedded with a heating pipe (7), and the surface of the graphite disc (4) is paved with copper wires (8). The assembly component (5) comprises a disc (501), the inside of the disc (501) is slidably connected with a left clamping plate (502) and a right clamping plate (503), and the lower surfaces of the left clamping plate (502) and the right clamping plate (503) are provided with X supports (504). The driving component (6) comprises a pinion (601), one side of the pinion (601) is engaged with a gear wheel (602), and the bottom of the gear wheel (602) is provided with an output shaft of a driving motor (603).
2. The semiconductor wafer apparatus having improved edge function according to claim 1, wherein: The left clamping plate (502) and the right clamping plate (503) are mutually symmetrical about the central axis of the disc (501), and are provided as a magnetic attraction structure.
3. The semiconductor epiwafer device with improved edge function of claim 1, wherein: The middle part of the X support (504) and the middle part of the inner wall of the disc (501) are connected in a rotating manner.
4. The semiconductor epiwafer device with improved edge function of claim 1, wherein: The inner wall of the pinion (601) is welded with a shaft rod, and the disc (501) is connected with the pinion (601) through the shaft rod.
5. The semiconductor epiwafer device with improved edge function of claim 1, wherein: The pinion (601) is provided with six pinions, and the pinions are equiangularly distributed about the central axis of the gear wheel (602), and the gear wheel (602) and the lower surface of the graphite disc (4) are connected in a rotating manner.
6. The semiconductor epiwafer device with improved edge function of claim 1, wherein: The heating pipe (7) is spirally wound on the inner wall of the reaction chamber (1), and the heating pipe (7) is located above the graphite disc (4).
7. The semiconductor epiwafer device with improved edge function of claim 1, wherein: The copper wires (8) are provided with a plurality of copper wires, and the copper wires (8) are distributed in a divergent manner.