Temperature uniformity test tool for semiconductor wafer heater

Abstract

The utility model provides a temperature uniformity test tool of a semiconductor wafer heater. The temperature uniformity test tool comprises a disc body; a temperature measuring hole is formed in the center of the disc body; at least one layer of temperature measuring structure is concentrically arranged from the center of the disc body to the outside in sequence; each layer of temperature measuring structure comprises temperature measuring holes arranged along the circumferential direction; a temperature measuring thermocouple is arranged in the temperature measuring hole; the bottom surface of the tray body is positioned above the semiconductor wafer heater; and the temperature measuring thermocouple passes through the temperature measuring hole and is in contact with the upper surface of the semiconductor wafer heater. According to the temperature uniformity inspection tool provided by the utility model, through arranging a plurality of layers of temperature measurement structures, the temperature detection precision can be improved, the temperature uniformity can be effectively evaluated, the detection operation is simplified, and the detection efficiency is improved.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of semiconductor processing, specifically relates to a temperature uniformity test tool of semiconductor wafer heater. BACKGROUND

[0002] In the field of semiconductor manufacturing, semiconductor wafer heater is one of the key equipment to realize high-quality wafer processing, its main function is to provide accurate temperature control for wafer in various processing processes to ensure the stability and consistency of processing.

[0003] However, the existing semiconductor wafer heater still has some deficiencies in temperature uniformity. Due to the complex internal structure of the heater, the heat conduction path is variable, which leads to the uneven temperature distribution on the surface of the wafer during the heating process. This temperature non-uniformity will directly affect the processing quality of the wafer, such as in photolithography, diffusion, oxidation and other key processes, the small difference in temperature may lead to the increase of wafer defect rate, and then affect the performance and reliability of semiconductor devices.

[0004] Therefore, it is very important to detect the temperature uniformity of semiconductor wafer heater. UTILITY MODEL CONTENT

[0005] In view of the deficiencies in the prior art, the utility model aims at providing a temperature uniformity test tool of semiconductor wafer heater, the temperature uniformity test tool provided by the utility model can improve the precision of temperature detection, effectively evaluate the uniformity of temperature, and simplify the detection operation and improve the detection efficiency.

[0006] To achieve this purpose, the utility model adopts the following technical solutions:

[0007] The utility model provides a temperature uniformity test tool of semiconductor wafer heater, the temperature uniformity test tool includes disc body;

[0008] The center of the disc body is provided with a temperature measuring hole;

[0009] At least one layer of temperature measuring structure is arranged concentrically outward from the center of the disc body;

[0010] Each temperature measuring structure includes a temperature measuring hole arranged in the circumferential direction;

[0011] The temperature measuring hole is provided with a temperature measuring thermocouple;

[0012] The bottom surface of the disc body is located above the semiconductor wafer heater;

[0013] The temperature measuring thermocouple passes through the temperature measuring hole and contacts the upper surface of the semiconductor wafer heater.

[0014] The utility model discloses, through setting up multilayer temperature measurement structure on the disc body, each layer temperature measurement structure is arranged temperature measurement hole along the circumferential direction, and installs temperature measurement thermocouple in the hole, can carry out all -round, high density temperature detection to the upper surface of semiconductor wafer heater, compared with the prior art single point or a few point temperature measurement mode, can more accurately reflect the temperature distribution of heater surface, thereby improve the precision and reliability of temperature detection.

[0015] The utility model discloses, the material quality of disc body is not special limited, can adopt any commonly used tooling material in the field, for example can be aluminum and / or aluminum alloy, thereby reduce tooling cost. The temperature measurement thermocouple can adopt any commonly used thermocouple in the field, for example can be compression spring thermocouple, and the aperture of temperature measurement hole is made according to the diameter of thermocouple, makes thermocouple can pass through from temperature measurement hole, and temperature measurement hole is provided with fixed nut of fixed temperature measurement thermocouple.

[0016] Preferably, the temperature measurement holes in each layer of the temperature measurement structure are arranged at equal intervals.

[0017] Preferably, 2-5 layers of temperature measurement structures are arranged concentrically outward from the center of the disc body, for example, 2 layers, 3 layers, 4 layers or 5 layers, but not limited to the listed values, other unlisted values within the value range are also applicable.

[0018] In the utility model, by concentrically arranging the temperature measurement structures and controlling the number of temperature measurement structures, temperature data of different radius positions on the surface of the heater can be further obtained, and by comparing and analyzing these data, the temperature uniformity of the semiconductor wafer heater can be intuitively evaluated, and the area with large temperature deviation can be identified, thereby providing accurate basis for subsequent optimization and adjustment of the heater.

[0019] Preferably, the number of temperature measurement holes in each layer of the temperature measurement structure is 3-6, for example, 3, 4, 5 or 6, but not limited to the listed values, other unlisted values within the value range are also applicable.

[0020] In the utility model, the temperature measurement holes in each adjacent layer of the temperature measurement structure are generally located at different radial directions, which can further perform all-round and high-density temperature detection on the upper surface of the semiconductor wafer heater, thereby improving the uniformity of detection.

[0021] Preferably, the edge of the disc body is circumferentially and equally spaced with positioning screw holes.

[0022] Preferably, the number of positioning screw holes is ≥2, for example, 2, 3 or 4, but not limited to the listed values, other unlisted values within the value range are also applicable.

[0023] Preferably, a supporting screw is arranged in the positioning screw hole and is threadedly connected with the positioning screw hole.

[0024] In the utility model, the disc body is erected above the heater, so that the detection of the temperature uniformity of the upper surface of the heater is facilitated.

[0025] Preferably, the diameter of the outermost temperature measuring structure accounts for 70-80% of the diameter of the semiconductor wafer heater, for example, can be 70%, 72%, 74%, 76%, 78% or 80%, but is not limited to the listed values, and other values not listed in the value range are also applicable.

[0026] In the utility model, by controlling the proportion of the diameter of the outermost temperature measuring structure to the diameter of the semiconductor wafer heater, the temperature detection uniformity can be further improved, the number of thermocouples can be reduced, and the detection cost can be reduced.

[0027] In the utility model, the diameter of the disc body is generally greater than the diameter of the semiconductor wafer heater, and the size exceeding the diameter of the heater is not particularly limited and can be set as required, for example, 20 mm more than the diameter of the heater.

[0028] Preferably, the thickness of the disc body is 5-10 mm, for example, can be 5 mm, 6 mm, 7 mm, 8 mm, 9 mm or 10 mm, but is not limited to the listed values, and other values not listed in the value range are also applicable.

[0029] Preferably, the distance between the bottom surface of the disc body and the upper surface of the semiconductor wafer heater is ≥5 mm, for example, can be 5 mm, 6 mm, 7 mm, 8 mm, 9 mm or 10 mm, but is not limited to the listed values, and other values not listed in the value range are also applicable.

[0030] In the utility model, by setting the distance between the bottom surface of the disc body and the upper surface of the semiconductor wafer heater, the support height of the supporting screw can be conveniently adjusted, and the surface of the heater is prevented from being scratched due to too close distance during adjustment.

[0031] The operation process of the inspection tool for the temperature uniformity inspection of the semiconductor wafer heater is as follows:

[0032] The semiconductor wafer heater is placed on the supporting pad block of the heating platform, and the semiconductor wafer heater is connected with the electric box through the wire;

[0033] The supporting screw is passed through the positioning screw hole, so that the disc body is supported and suspended above the semiconductor wafer heater, and the disc body is concentrically arranged with the semiconductor wafer heater, the distance between the bottom surface of the disc body and the upper surface of the semiconductor wafer heater is ≥5 mm by adjusting the screwing height of the supporting screw.

[0034] The temperature measuring thermocouple is passed through the temperature measuring hole, and the depth of penetration is adjusted so that the temperature measuring thermocouple is in contact with the upper surface of the semiconductor wafer heater, and the temperature measuring thermocouple is locked by a fixing nut and connected with the electric box lead wire;

[0035] The semiconductor wafer heater and the temperature measuring thermocouple are turned on, the heating temperature is set and the temperature is raised, and then the temperature is kept constant, and the temperature of each point measured by the temperature measuring thermocouple is recorded, and the temperature difference of each point is calculated. According to the processing requirements and the performance of the equipment, the temperature difference standard is set, such as ±0.1℃, if the temperature difference of each point is less than the set temperature difference standard, it is considered that the temperature distribution is uniform, if it is greater than the temperature difference standard, it is considered that the temperature distribution is not uniform.

[0036] Compared with the prior art, the utility model has the following beneficial effects:

[0037] In the utility model, the multi-layer temperature measuring structure is arranged on the disc body, each layer of temperature measuring structure is arranged with temperature measuring holes in the circumferential direction, and the temperature measuring thermocouple is installed in the hole, the upper surface of the semiconductor wafer heater can be detected in all directions and high density, compared with the prior art single point or small amount of temperature measuring mode, the temperature distribution of the heater surface can be more accurately reflected, thereby the precision and reliability of temperature detection are improved. BRIEF DESCRIPTION OF DRAWINGS

[0038] Figure 1 The top view of the disc body of the temperature uniformity test tool provided in the utility model embodiment 1 is provided;

[0039] Figure 2 The assembly structure schematic view of the temperature uniformity test tool and the semiconductor wafer heater provided in the utility model embodiment 1 is provided;

[0040] In the drawing, 1 is a disc body, 2 is a temperature measuring hole, 3 is a positioning screw hole, 4 is a temperature measuring thermocouple, 5 is a semiconductor wafer heater, 6 is a supporting pad, 7 is a supporting screw, 8 is a heating platform, and 9 is an electric box. DETAILED DESCRIPTION

[0041] It should be understood that, in the description of the utility model, the orientation or positional relationship indicated by the terms "center", "longitudinal", "transverse", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer" and the like is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the utility model and simplifying the description, and therefore cannot be understood as a limitation on the utility model. The device or element indicated or implied must have a particular orientation, a particular orientation and operation, therefore it cannot be understood as a limitation on the utility model.

[0042] It should be noted that, in the description of this utility model, unless otherwise explicitly specified and limited, the terms "set," "connected," and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.

[0043] The technical solution of this utility model will be further described below with reference to the accompanying drawings and specific embodiments.

[0044] Example 1

[0045] This embodiment provides a fixture for inspecting the temperature uniformity of a semiconductor wafer heater, such as... Figure 1 As shown, the temperature uniformity testing fixture includes a disk body 1. A temperature measuring hole 2 is provided at the center of the disk body 1. Five layers of temperature measuring structures are concentrically arranged from the center of the disk body 1 outwards. Each layer of the temperature measuring structure includes temperature measuring holes 2 arranged along the circumferential direction. A temperature measuring thermocouple is installed in the temperature measuring hole 2. The bottom surface of the disk body 1 is located above the semiconductor wafer heater. The temperature measuring thermocouple passes through the temperature measuring hole 2 and contacts the upper surface of the semiconductor wafer heater. A fixing nut for fixing the temperature measuring thermocouple is provided on the temperature measuring hole 2. The temperature measuring holes 2 are arranged at equal intervals in each layer of the temperature measuring structure. From the first layer to the fifth layer, the number of temperature measuring thermocouples in each layer is 3, 3, 6, 6, and 6 respectively. The diameter of the outermost layer of the temperature measuring structure accounts for 75% of the diameter of the semiconductor wafer heater.

[0046] The disk body 1 has two positioning screw holes 3 evenly spaced around its circumference. A support screw is installed inside each positioning screw hole 3 and is threadedly connected to the positioning screw hole 3. The thickness of the disk body 1 is 6mm. The diameter of the disk body 1 exceeds the diameter of the semiconductor wafer heater by 20mm. The distance between the bottom surface of the disk body 1 and the upper surface of the semiconductor wafer heater is 5mm.

[0047] Example 2

[0048] The embodiment provides a temperature uniformity test tool for a semiconductor wafer heater, the temperature uniformity test tool comprising a disc body, a temperature measuring hole is arranged at the center of the disc body, five layers of temperature measuring structures are arranged outward from the center of the disc body in sequence and concentrically, each layer of the temperature measuring structure comprises temperature measuring holes arranged in a circumferential direction, a temperature measuring thermocouple is arranged in each temperature measuring hole, the bottom surface of the disc body is located above the semiconductor wafer heater, the temperature measuring thermocouple passes through the temperature measuring hole and is in contact with the upper surface of the semiconductor wafer heater, a fixing nut for fixing the temperature measuring thermocouple is arranged on the temperature measuring hole, the temperature measuring holes in each layer of the temperature measuring structure are arranged at equal intervals, the number of temperature measuring thermocouples in each layer is 3, 3, 6, 6 and 6 from the first layer to the fifth layer, and the diameter of the temperature measuring structure in the outermost layer accounts for 70% of the diameter of the semiconductor wafer heater.

[0049] The disc body is circumferentially and equally spaced apart from the edge of the disc body, and the disc body is circumferentially and equally spaced apart from the edge of the disc body. The number of positioning screw holes is 4, a supporting screw rod is arranged in the positioning screw hole, the supporting screw rod is in threaded connection with the positioning screw hole, the thickness of the disc body is 5 mm, the diameter of the disc body is 20 mm larger than the diameter of the semiconductor wafer heater, and the distance between the bottom surface of the disc body and the upper surface of the semiconductor wafer heater is 6 mm.

[0050] Embodiment 3

[0051] The embodiment provides a temperature uniformity test tool for a semiconductor wafer heater, the temperature uniformity test tool comprising a disc body, a temperature measuring hole is arranged at the center of the disc body, five layers of temperature measuring structures are arranged outward from the center of the disc body in sequence and concentrically, each layer of the temperature measuring structure comprises temperature measuring holes arranged in a circumferential direction, a temperature measuring thermocouple is arranged in each temperature measuring hole, the bottom surface of the disc body is located above the semiconductor wafer heater, the temperature measuring thermocouple passes through the temperature measuring hole and is in contact with the upper surface of the semiconductor wafer heater, a fixing nut for fixing the temperature measuring thermocouple is arranged on the temperature measuring hole, the temperature measuring holes in each layer of the temperature measuring structure are arranged at equal intervals, the number of temperature measuring thermocouples in each layer is 3, 3, 6, 6 and 6 from the first layer to the fifth layer, and the diameter of the temperature measuring structure in the outermost layer accounts for 70% of the diameter of the semiconductor wafer heater.

[0052] The disc body is circumferentially and equally spaced apart from the edge of the disc body, and the disc body is circumferentially and equally spaced apart from the edge of the disc body. The number of positioning screw holes is 4, a supporting screw rod is arranged in the positioning screw hole, the supporting screw rod is in threaded connection with the positioning screw hole, the thickness of the disc body is 5 mm, the diameter of the disc body is 20 mm larger than the diameter of the semiconductor wafer heater, and the distance between the bottom surface of the disc body and the upper surface of the semiconductor wafer heater is 6 mm.

[0053] As Figure 2 shown in FIG. 1, the operation process of the test tool provided in the embodiments 1-3 for the temperature uniformity test of the semiconductor wafer heater 5 is as follows:

[0054] The semiconductor wafer heater 5 is placed on the supporting pad 6 of the heating platform 8, and the semiconductor wafer heater 5 is connected with the electric box 9 through wires;

[0055] The supporting screw 7 is passed through the positioning screw hole, so that the disc body 1 is supported and suspended above the semiconductor wafer heater 5, and the disc body 1 is arranged concentrically with the semiconductor wafer heater 5; the distance between the bottom surface of the disc body 1 and the upper surface of the semiconductor wafer heater 5 is controlled by adjusting the screwing height of the supporting screw 7;

[0056] The temperature measuring thermocouple 4 is passed through the temperature measuring hole, and the depth of penetration is adjusted so that the temperature measuring thermocouple 4 is in contact with the upper surface of the semiconductor wafer heater 5, and the temperature measuring thermocouple 4 is locked through the fixing nut and connected with the electric box 9 through wires;

[0057] The semiconductor wafer heater 5 and the temperature measuring thermocouple 4 are turned on, the heating temperature is set and the temperature is raised, then the temperature is kept, the temperature of each point measured by the temperature measuring thermocouple 4 is recorded after the temperature is kept, and the temperature difference of each point is calculated; the temperature difference standard is set according to the processing requirements and the equipment performance, for example, ±0.5℃; if the temperature difference of each point is less than the set temperature difference standard, it is considered that the temperature distribution is uniform, and if the temperature difference is greater than the temperature difference standard, it is considered that the temperature distribution is not uniform.

[0058] In summary, the temperature uniformity test tool provided by the utility model can improve the precision of temperature detection, effectively evaluate the uniformity of temperature, and simplify the detection operation and improve the detection efficiency by arranging the multi-layer temperature measuring structure.

[0059] The applicant declares that the above description is only a specific embodiment of the utility model, but the protection scope of the utility model is not limited to this; the skilled in the art should understand that any change or replacement within the technical range disclosed by the utility model can be easily thought by any person skilled in the art, and falls within the protection scope and disclosure range of the utility model.

Claims

1. A fixture for inspecting the temperature uniformity of a semiconductor wafer heater, characterized in that, The temperature uniformity inspection tool comprises a disc body; The center of the disc body is provided with a temperature measurement hole; At least one layer of temperature measurement structure is arranged outward from the center of the disc body; Each layer of the temperature measurement structure comprises temperature measurement holes arranged in the circumferential direction; The temperature measurement holes are provided with temperature measurement thermocouples; The bottom surface of the disc body is located above the semiconductor wafer heater; The temperature measurement thermocouples pass through the temperature measurement holes and are in contact with the upper surface of the semiconductor wafer heater.

2. The temperature uniformity inspection tool for a semiconductor wafer heater as claimed in claim 1, wherein, The temperature measurement holes in each layer of the temperature measurement structure are arranged at equal intervals.

3. The apparatus for inspecting temperature uniformity of a semiconductor wafer heater according to claim 1, wherein 2-5 layers of temperature measurement structure are arranged outward from the center of the disc body.

4. The apparatus for inspecting temperature uniformity of a semiconductor wafer heater according to claim 1, wherein The number of temperature measurement holes in each layer of the temperature measurement structure is 3-6.

5. The apparatus for inspecting temperature uniformity of a semiconductor wafer heater according to claim 1, wherein The edge of the disc body is circumferentially provided with positioning screw holes at equal intervals.

6. The temperature uniformity inspection tool for a semiconductor wafer heater as claimed in claim 5, wherein, The number of positioning screw holes is ≥2.

7. The apparatus for inspecting temperature uniformity of a semiconductor wafer heater according to claim 5, wherein Supporting screws are arranged in the positioning screw holes, and the supporting screws are threadedly connected with the positioning screw holes.

8. The apparatus for inspecting temperature uniformity of a semiconductor wafer heater according to claim 1, wherein The diameter of the outermost layer of the temperature measurement structure accounts for 70-80% of the diameter of the semiconductor wafer heater.

9. The apparatus for inspecting temperature uniformity of a semiconductor wafer heater according to claim 1, wherein The thickness of the disc body is 5-10mm.

10. The apparatus for inspecting temperature uniformity of a semiconductor wafer heater according to claim 1, wherein The distance between the bottom surface of the disc body and the upper surface of the semiconductor wafer heater is ≥5mm.

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